US20230225215A1

US20230225215A1 - Acoustic wave device

Info

Publication number: US20230225215A1
Application number: US18/122,156
Authority: US
Inventors: Takashi Osawa; Masaki TSUTSUMI; Masahiro Fukushima
Original assignee: Murata Manufacturing Co Ltd
Current assignee: Murata Manufacturing Co Ltd
Priority date: 2019-07-31
Filing date: 2023-03-16
Publication date: 2023-07-13
Also published as: JP2021027375A; US11637232B2; US20210036211A1

Abstract

An acoustic wave device includes a piezoelectric substrate made of LiNbO3 or LiTaO3 and including first and second main surfaces that face each other, an IDT electrode provided on the first main surface of the piezoelectric substrate, and a Li2CO3 layer provided on the second main surface of the piezoelectric substrate.

Description

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to Japanese Patent Application No. 2019-140698 filed on Jul. 31, 2019. The entire contents of this application are hereby incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an acoustic wave device that includes a piezoelectric substrate made of LiNbO₃or LiTaO₃.

2. Description of the Related Art

To date, various acoustic wave devices have been proposed that use piezoelectric substrates made of LiNbO₃, LiTaO₃, and so forth. A piezoelectric wafer is transported by a transporting arm during the manufacture of these types of acoustic wave devices. The manufacturing process may stop if the piezoelectric wafer becomes charged and sticks to the transporting arm.
In the acoustic wave device disclosed in Japanese Unexamined Patent Application Publication No. 2001-102898, films made of a resistive material are provided on both main surfaces of a piezoelectric substrate in order to suppress charging of the piezoelectric substrate. It is described that it is desirable to use an organic material, an inorganic oxide such as SiO₂, Al₂O₃or MgO, or semi-conductive material such as Si as the resistive material. The films made of a resistive material are formed by sputtering.
On the other hand, Japanese Unexamined Patent Application Publication No. 2007-165949 discloses an acoustic wave device having a WLP structure. In this case, an Al film or the like is formed by vapor deposition or plating on the surface of a piezoelectric substrate that is on the opposite side from the surface of the piezoelectric substrate where an IDT electrode will be provided.
The film made of a resistive material disclosed in Japanese Unexamined Patent Application Publication No. 2001-102898 is formed by sputtering. Therefore, vacuum batch processing is necessary. Consequently, there is a problem in that productivity is poor. In addition, there is a risk of cracks occurring in the piezoelectric substrate due to heating of the piezoelectric substrate during the sputtering process.
In the acoustic wave device disclosed in Japanese Unexamined Patent Application Publication No. 2007-165949, the Al film is formed by vapor deposition or plating. Vacuum batch processing is necessary during the vapor deposition and therefore productivity is poor. In addition, there is a risk of cracks occurring in the piezoelectric substrate due to heating of the piezoelectric substrate during the vapor deposition.
Furthermore, a large amount of time is necessary and productivity is poor when an Al film or the like is formed by plating.

SUMMARY OF THE INVENTION

Preferred embodiments of the present invention provide acoustic wave devices that each have excellent productivity and in each of which a piezoelectric substrate thereof is not susceptible to becoming charged and consequently transportation failures due to charging are unlikely to occur.
A preferred embodiment of the present invention provides an acoustic wave device that includes a piezoelectric substrate made of LiNbO₃or LiTaO₃and including first and second main surfaces that face each other; a functional electrode that is provided on the first main surface of the piezoelectric substrate and that excites acoustic waves; and a Li₂CO₃layer that is provided on the second main surface of the piezoelectric substrate.
The acoustic wave devices according to the preferred embodiments of the present invention each have excellent productivity and a piezoelectric substrate thereof is not susceptible to becoming charged. Therefore, transportation failures arising from charging are unlikely to occur.
The above and other elements, features, steps, characteristics and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a front sectional view of an acoustic wave device according to a first preferred embodiment of the present invention.

FIG. 2 is a front sectional view of an acoustic wave device according to a second preferred embodiment of the present invention.

FIG. 3 is a diagram illustrating the relationship between laser output and surface resistivity when a piezoelectric substrate made of LiNbO₃is irradiated with a laser.

FIG. 4 is a diagram illustrating the relationship between laser output and surface resistivity when a piezoelectric substrate made of LiTaO₃is irradiated with a laser.

FIG. 5 is a diagram illustrating XPS spectra of C1s of LiNbO₃substrates of acoustic wave devices of an example 1 of a preferred embodiment of the present invention and a comparative example 1.

FIG. 6 is a diagram illustrating XPS spectra of Li1s of LiNbO₃substrates of the acoustic wave devices of example 1 and comparative example 1.

FIG. 7 is a diagram illustrating XPS spectra of C1s of second main surfaces of piezoelectric substrates made of LiTaO₃in acoustic wave devices of an example 2 of a preferred embodiment of the present invention and a comparative example 2.

FIG. 8 is a diagram illustrating XPS spectra of Li1s of the second main surfaces of piezoelectric substrates made of LiTaO₃in the acoustic wave devices of example 2 and comparative example 2.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereafter, the present invention will be clarified by describing preferred embodiments of the present invention with reference to the drawings.
The preferred embodiments described in the present specification are non-limiting illustrative examples and portions of the configurations illustrated in different preferred embodiments can be substituted for one another or combined with one another.
FIG. 1 is a front sectional view of an acoustic wave device according to a first preferred embodiment of the present invention.
An acoustic wave device 1 preferably has a WLP structure. The acoustic wave device 1 includes a piezoelectric substrate 2 preferably made of LiNbO₃, for example. The piezoelectric substrate 2 may instead be made of LiTaO₃, for example. The piezoelectric substrate 2 includes a first main surface 2 a and a second main surface 2 b that is on the opposite side from the first main surface 2 a. An IDT electrode 3 and reflectors 4 and 5 are provided as functional electrodes on the first main surface 2 a. The acoustic wave device 1 is preferably configured as a one-port surface acoustic wave resonator, for example. However, the structure of the functional electrodes including the IDT electrode 3 and the reflectors 4 and 5 and so on is not limited to this example. Functional electrodes may be provided so as to define an acoustic wave filter and other acoustic wave elements, for example.
Wiring line electrodes 6 and 7 are provided on the first main surface 2 a. The wiring line electrodes 6 and 7 are electrically connected to the IDT electrode 3 in a portion that is not illustrated.
A frame-shaped support layer 9 is provided on the first main surface 2 a of the piezoelectric substrate 2. The support layer 9 defines a hollow portion X. The support layer 9 surrounds the portion where the IDT electrode 3 is provided. The support layer 9 is made of a suitable insulating material such as, for example, a composite resin.
A cover 10 is fixed to the support layer 9 so as to close the frame-shaped opening of the support layer 9. The cover 10 is preferably made of, for example, an insulating ceramic such as alumina or a composite resin. The region enclosed by the cover 10, the support layer 9, and the piezoelectric substrate 2 defines the hollow portion X. The IDT electrode 3 is located inside the hollow portion X.
A plurality of through holes penetrate through the support layer 9 and the cover 10. Under bump metal layers 11 and 12 are respectively provided inside the through holes. One end of the under bump metal layer 11 is bonded to the wiring line electrode 6 and the other end of the under bump metal layer 11 is bonded to a metal bump 13. One end of the under bump metal layer 12 is bonded to the wiring line electrode 7 and the other end of the under bump metal layer 12 is bonded to a metal bump 14. The metal bumps 13 and 14 are located on the outside of the cover 10.
The acoustic wave device 1 can be mounted on, for example a printed circuit board or the like using the metal bumps 13 and 14. The metal bumps 13 and 14 are made of a metal or an alloy such as solder or Au, for example.
The IDT electrode 3, the reflectors 4 and 5, the wiring line electrodes 6 and 7, and the under bump metal layers 11 and 12 are made of a suitable metal or alloy. Furthermore, the IDT electrode 3, the reflectors 4 and 5, and so on may be made of multilayer metal films including a plurality of metal films.
A Li₂CO₃layer 8 is stacked on the second main surface 2 b of the piezoelectric substrate 2. In FIG. 1 , the Li₂CO₃layer 8 covers the entire or substantially the entire second main surface 2 b. However, the Li₂CO₃layer 8 may instead be provided on only a portion of the second main surface 2 b. In other words, the Li₂CO₃layer 8 may be provided in a partial manner on a portion of the second main surface 2 b of the piezoelectric substrate 2. In this case, the planar shape and pattern shape of the Li₂CO₃layer 8 are not particularly limited. In other words, an arbitrary planar shape may be used such as, for example, a plurality of dot-shaped Li₂CO₃layers 8.
The electrical resistance, i.e., the surface resistivity of Li₂CO₃is about 10⁵Ω to 10⁷Ω, for example. On the other hand, the surface resistivity of LiNbO₃is greater than or equal to about 10⁸Ω, for example. In other words, the electrical resistance of Li₂CO₃is lower than that of LiNbO₃.
A transporting arm is used in a process of manufacturing or mounting an acoustic wave device. In this case, at the mother piezoelectric wafer stage prior to the mother piezoelectric wafer being divided into individual chips, the transporting arm is used to support the surface of the piezoelectric wafer on the opposite side from the surface on which the IDT electrode will be formed and transport the piezoelectric wafer. If the piezoelectric wafer is susceptible to becoming charged, there is a risk of the piezoelectric wafer becoming stuck to the transporting arm and not releasing from the transporting arm.
In contrast, in the acoustic wave device 1, the Li₂CO₃layer 8 is provided on the second main surface 2 b of the piezoelectric substrate 2 and, therefore, the piezoelectric substrate 2 is not susceptible to becoming charged. Therefore, the acoustic wave device 1 whose piezoelectric substrate is at the wafer stage prior to dividing of the wafer can be smoothly transported by the transporting arm. In addition, the Li₂CO₃layer 8 can be easily formed by irradiating one surface of the piezoelectric substrate at the wafer stage with a laser. Therefore, it is unlikely that a reduction in productivity will occur.
FIG. 2 is a front sectional view of an acoustic wave device according to a second preferred embodiment of the present invention.
A piezoelectric substrate 22 of an acoustic wave device 21 is preferably made of LiNbO₃or LiTaO₃, for example. In the acoustic wave device 21, wiring line electrodes 6 and 7 are connected to terminal electrodes 25 and 26 via connection electrodes 23 and 24. The wiring line electrodes 6 and 7 are provided on a first main surface 22 a of the piezoelectric substrate 22. The terminal electrodes 25 and 26 are stacked on a second main surface 22 b of the piezoelectric substrate 22 with a Li₂CO₃layer 8 and insulating layers 27 and 28 interposed therebetween.
First ends of the connection electrodes 23 and 24 are connected to the wiring line electrodes 6 and 7 and second ends of the connection electrodes 23 and 24 are connected to the terminal electrodes 25 and 26. Therefore, the acoustic wave device 21 can be mounted on a printed circuit board or the like, for example, using the terminal electrodes 25 and 26. The connection electrodes 23 and 24 extend along the side surfaces of the piezoelectric substrate 22, which connect the first main surface 22 a and the second main surface 22 b to each other.
The boundaries between the wiring line electrodes 6 and 7 and the connection electrodes 23 and 24 and the boundaries between the connection electrodes 23 and 24 and the terminal electrodes 25 and 26 are not clear in FIG. 2 . However, the positions of these boundaries are not particularly restricted since these members are manufactured in an integrated manner using the same metal material. For example, the portions located on the first main surface 22 a may be regarded as the wiring electrodes 6 and 7 and the portions located on the insulating layers 27 and 28 may be regarded as the terminal electrodes 25 and 26. Furthermore, the portions that connect the wiring line electrodes 6 and 7 and the terminal electrodes 25 and 26 to each other may be regarded as the connection electrodes 23 and 24.
The connection electrodes 23 and 24 and the terminal electrodes 25 and 26 can be made using a metal material similarly to the wiring line electrodes 6 and 7.
The insulating layers 27 and 28 are preferably made of an insulating ceramic or a composite resin such as silicon oxide or silicon oxynitride, for example.
In the acoustic wave device 21, a cover 10 is provided to close the opening of a support layer 9. Thus, a hollow portion X is provided.
The rest of the configuration of the acoustic wave device 21 is the same or substantially the same as that of the acoustic wave device 1. Therefore, the same portions are denoted by the same reference symbols and description thereof is omitted.
In the present preferred embodiment, the Li₂CO₃layer 8 is provided on the second main surface 22 b. Therefore, in the case of the acoustic wave device 21, the piezoelectric substrate 22 is not susceptible to becoming charged when transporting the acoustic wave device 21 or when transporting a piezoelectric substrate at the mother wafer stage using a transporting arm. Therefore, transportation using a transporting arm can be easily performed. As described above, the Li₂CO₃layer 8 can be easily formed using laser irradiation. Therefore, it is unlikely that a reduction in productivity will occur.
Next, a specific description will be provided of an example of the process of forming the Li₂CO₃layer 8 by laser irradiation while referring to FIGS. 3 to 8 .
FIG. 3 is a diagram illustrating the relationship between laser light output and the post-laser-irradiation surface resistivity of the surface of a wafer irradiated with a laser when the surface of a piezoelectric wafer made of LiNbO₃is irradiated with laser light. A nanosecond pulse laser was used as the laser. The wavelength was about 355 nm, the pulse width was about 10 ns, the frequency was about 250 kHz, the beam diameter was about 25 μm, the scanning speed was about 500 nm/s, and the scanning pitch was about 20 μm. Under these conditions, the laser output was changed to various values and the corresponding values of the surface resistivity of the surface of the piezoelectric substrate were obtained.
As is clear from FIG. 3 , the surface resistivity was high with a value greater than or equal to about 1.0×10⁸Ω in a laser output range from 0 W, i.e., prior to the laser irradiation, to about 0.2 W. In contrast, the surface resistivity dropped when the laser output exceeded about 0.3 W, and in particular, the surface resistivity had a value less than or equal to about 1.0×10⁷Ω when the laser output exceeded about 0.4 W. This is attributed to the formation of a low-resistance Li₂CO₃layer on the surface of the piezoelectric substrate due to the laser irradiation.
FIG. 4 illustrates the relationship between the laser light output and the post-laser-irradiation surface resistivity of the surface of a piezoelectric wafer irradiated with a laser when a laser is irradiated in the same or substantially the same manner as described above using a piezoelectric wafer made of LiTaO₃.
In this case, the laser irradiation conditions were as follows. A nanosecond pulse laser was used. The wavelength was about 532 nm, the pulse width was about 25 ns, the frequency was about 500 kHz, the beam diameter was about 30 μm, the scanning speed was about 100 nm/s, and the scanning pitch was about 20 μm. Under these conditions, the laser output was changed to various values and the entirety or substantially the entirety of one surface of a piezoelectric wafer was processed.
As is clear from FIG. 4 , the surface resistivity was high with a value greater than or equal to about 1.0×10¹⁰Ω in a laser output range from 0 W, i.e., prior to the laser irradiation, to about 0.3 W. In contrast, it is clear that the surface resistivity rapidly dropped to less than or equal to about 1.0×10⁷Ω when the laser output exceeded about 0.4 W. This is attributed to the formation of a low-resistance Li₂CO₃layer on the surface of the piezoelectric substrate due to the laser irradiation.
Next, specific examples 1 and 2 of preferred embodiments of the present invention will be described.

Example 1

A piezoelectric wafer made of LiNbO₃was prepared in order to manufacture the acoustic wave device 1 according to the first preferred embodiment. The surface of the piezoelectric wafer on the opposite side from the surface where the IDT electrode was to be formed was subjected to laser irradiation. A nanosecond pulse laser was used and the irradiation conditions were as follows.
The wavelength was about 355 nm, the pulse width was about 10 ns, the frequency was about 250 kHz, the average output was about 0.4 W, the beam diameter was about 25 μm, the scanning speed was about 500 nm/s, and the scanning pitch was about 20 μm. The entirety or substantially the entirety of one surface of the piezoelectric wafer was processed under these conditions. The acoustic wave device 1 was manufactured using the piezoelectric wafer obtained as described above. The incidence of transportation failures in this manufacturing process, i.e., the incidence of failures in which the equipment stopped due to the piezoelectric wafer becoming charged and sticking to the transporting arm, was close to 0%. For comparison, the incidence of such transportation failures in a comparative example 1, in which a piezoelectric wafer that had not been subjected to laser processing was used, was about 3%.
FIG. 5 is a diagram illustrating the XPS spectra of C1s of the LiNbO₃substrates of the acoustic wave devices of example 1 and comparative example 1. The solid line represents the results of example 1 and the broken line represents the results of comparative example 1. The results of example 1 are results for a surface that has been subjected to the laser processing described above. It is clear from FIG. 5 that the binding energy intensity is high at about 289.7 eV, which indicates the binding energy of O═C—O, in example 1, whereas the intensity at this binding energy value is low in comparative example 1.
On the other hand, FIG. 6 is a diagram illustrating the XPS spectra of Li1s of the LiNbO₃substrates of the acoustic wave devices of example 1 and comparative example 1. In FIG. 6 as well, the solid line represents the results of example 1 and the broken line represents the results of comparative example 1.
It can be seen that the intensity at about 55.4 eV resulting from Li₂CO₃is high with a value of about 0.60 a.u. in example 1, whereas the intensity at this binding energy value is low in comparative example 1.
Therefore, it is clear from FIGS. 5 and 6 that a Li₂CO₃layer is formed on one surface of the piezoelectric wafer by laser irradiation in example 1.

Example 2

LiTaO₃was prepared for the piezoelectric wafer instead of LiNbO₃and the piezoelectric wafer was irradiated with a laser. The laser irradiation conditions were as follows.
The wavelength was about 532 nm, the pulse width was about 25 ns, the frequency was about 500 kHz, the average output was about 0.5 W, the beam diameter was about 30 μm, the scanning speed was about 100 nm/s, and the scanning pitch was about 20 μm. The entire or substantially the entire surface of the piezoelectric wafer was irradiated with laser light under these conditions.
The acoustic wave device 1 of Example 2 was obtained with the WLP structure manufacturing process in the same or substantially the same way as in example 1 using a piezoelectric wafer obtained as described above. Furthermore, an acoustic wave device of a comparative example 2 was prepared in the same or substantially the same way as in example 2 except that a piezoelectric wafer was used that had not been subjected to laser processing.
In example 2, the incidence of failures in which the equipment stopped due to the piezoelectric wafer becoming charged and sticking to the transporting arm was 0%. In contrast, in comparative example 2, the incidence of transportation failures was about 3%.
As described above, it was also possible to reliably reduce or prevent transportation failures by providing a Li₂CO₃layer in the acoustic wave device 1 in which LiTaO₃is used.
FIG. 7 is a diagram illustrating XPS spectra of C1s of second main surfaces of the piezoelectric substrates made of LiTaO₃in the acoustic wave devices of example 2 and comparative example 2. FIG. 8 is a diagram illustrating XPS spectra of Li1s of the second main surfaces of the piezoelectric substrates made of LiTaO₃in the acoustic wave devices of example 2 and comparative example 2. In FIGS. 7 and 8 , the solid line represents the results of example 2 and the broken line represents the results of comparative example 2. The XPS spectra of the laser irradiated surface in example 2 are illustrated.
It is clear from FIG. 7 that the intensity at about 289.7 eV, which is the value of the binding energy of the O═C—O bond, is much higher in example 2 than in comparative example 2. In addition, it is clear from FIG. 8 that the intensity at a binding energy value of about 55.4 eV, which arises from Li₂CO₃, is also higher in example 2 than in comparative example 2.
Therefore, it is also clear that a Li₂CO₃layer is formed by the above-described laser irradiation in example 2.
In examples 1 and 2 described above, a nanosecond pulse laser was used, but the laser device used to radiate the laser light is not particularly limited. For example, a Kr—F excimer laser or a femtosecond laser may be used. In addition, the irradiation conditions only need to be selected in accordance with the laser device, the area and thickness of the Li₂CO₃layer to be formed, and so on and are not particularly limited.
While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing from the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.

Claims

What is claimed is:

1. An acoustic wave device comprising:

a piezoelectric substrate made of LiNbO₃or LiTaO₃and including first and second main surfaces that face each other;

an IDT electrode provided on the first main surface of the piezoelectric substrate; and

a Li₂CO₃layer provided on the second main surface of the piezoelectric substrate.

2. The acoustic wave device according to claim 1, wherein the Li₂CO₃layer is provided on a portion of the second main surface of the piezoelectric substrate.

3. The acoustic wave device according to claim 1, wherein the piezoelectric substrate is made of LiNbO₃.

4. The acoustic wave device according to claim 1, wherein the Li₂CO₃layer includes a pattern shape.

5. The acoustic wave device according to claim 1, wherein the IDT electrode is located inside a hollow portion; and

the Li₂CO₃layer overlaps with the hollow portion.

6. The acoustic wave device according to claim 1, wherein the Li₂CO₃layer overlaps with the IDT electrode.

7. The acoustic wave device according to claim 1, further comprising:

a terminal electrode provided on the second main surface of the piezoelectric substrate; wherein

the Li₂CO₃layer overlaps with the terminal electrode.

8. The acoustic wave device according to claim 1, further comprising a wiring electrode located on the first main surface of the piezoelectric substrate.

9. The acoustic wave device according to claim 1, further comprising:

a wiring electrode located on the first main surface of the piezoelectric substrate; wherein

the Li₂CO₃layer overlaps with the wiring electrode.

10. An acoustic wave device comprising:

a piezoelectric substrate including first and second main surfaces that face each other;

a functional electrode provided on the first main surface of the piezoelectric substrate to excite acoustic waves; and

a first layer provided on the second main surface of the piezoelectric substrate; wherein

a surface resistivity of the first layer is lower than a surface resistivity of the piezoelectric substrate.

11. The acoustic wave device according to claim 10, wherein the surface resistivity of the first layer is about 10⁵Ω to 10⁷Ω.

12. The acoustic wave device according to claim 10, wherein the surface resistivity of resistivity of the piezoelectric substrate is greater than or equal to about 10⁸Ω.

13. The acoustic wave device according to claim 10, wherein the first layer is provided on a portion of the second main surface of the piezoelectric substrate.

14. The acoustic wave device according to claim 10, wherein the piezoelectric substrate is made of LiNbO₃.

15. The acoustic wave device according to claim 10, wherein the functional electrode is located inside a hollow portion; and

the first layer overlaps with the hollow portion.

16. The acoustic wave device according to claim 10, wherein functional electrode is an IDT electrode; and

the first layer overlaps with the IDT electrode.

17. An acoustic wave device comprising:

a lasered layer formed by laser irradiation of the piezoelectric substrate provided on the second main surface of the piezoelectric substrate.

18. The acoustic wave device according to claim 17, wherein the lasered layer is provided on a portion of the second main surface of the piezoelectric substrate.

19. The acoustic wave device according to claim 17, wherein the piezoelectric substrate is made of LiNbO₃.

20. The acoustic wave device according to claim 17, wherein

functional electrode is an IDT electrode; and

the first layer overlaps with the IDT electrode.