WO2019124032A1 - 基板処理システム、基板処理方法及びコンピュータ記憶媒体 - Google Patents
基板処理システム、基板処理方法及びコンピュータ記憶媒体 Download PDFInfo
- Publication number
- WO2019124032A1 WO2019124032A1 PCT/JP2018/044366 JP2018044366W WO2019124032A1 WO 2019124032 A1 WO2019124032 A1 WO 2019124032A1 JP 2018044366 W JP2018044366 W JP 2018044366W WO 2019124032 A1 WO2019124032 A1 WO 2019124032A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- grinding
- substrate
- thickness
- protective material
- wafer
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 153
- 239000000758 substrate Substances 0.000 title claims abstract description 147
- 238000003672 processing method Methods 0.000 title claims description 14
- 238000003860 storage Methods 0.000 title claims description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 160
- 239000000463 material Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims description 82
- 238000005259 measurement Methods 0.000 claims description 81
- 238000003754 machining Methods 0.000 abstract 5
- 235000012431 wafers Nutrition 0.000 description 252
- 238000012546 transfer Methods 0.000 description 34
- 238000004140 cleaning Methods 0.000 description 25
- 238000012805 post-processing Methods 0.000 description 14
- 238000004364 calculation method Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Definitions
- the present invention relates to a substrate processing system for processing a processed surface of a substrate provided with a protective material on a non-processed surface, a substrate processing method using the substrate processing system, and a computer storage medium.
- the back surface of a wafer may be ground to thin the wafer with respect to a semiconductor wafer (hereinafter referred to as a wafer) on which devices such as a plurality of electronic circuits are formed on the surface. It has been done. Further, as described in, for example, Patent Document 1 and Patent Document 2, for example, a protective tape is provided on the surface of the wafer before grinding as a protective material for protecting the device.
- the grinding apparatus includes, for example, a rotatable chuck that holds the front surface of the wafer, and a grinding wheel that is annularly rotatably configured and includes a grinding wheel that grinds the back surface of the wafer held by the chuck. Then, in this grinding apparatus, rough grinding and finish grinding are sequentially performed on the back surface of the wafer. Specifically, in each grinding process, the back surface of the wafer is ground by bringing the grinding wheel into contact with the back surface of the wafer while rotating the chuck (wafer) and the grinding wheel (grinding wheel). In addition, during this grinding, the wafer is finished to a target thickness by measuring the thickness of the wafer with a thickness measurement gauge.
- the above-described thickness measurement gauge is a contact type, and includes a reference height gauge and a wafer height gauge, and a value obtained by subtracting the measurement value of the reference height gauge from the measurement value of the wafer height gauge. It is stated that the thickness of the wafer is measured on the basis of. In this case, since the protective tape is attached to the surface of the wafer, the thickness of the wafer is calculated in consideration of the thickness of the protective tape.
- Patent Document 2 describes using a non-contact type finish thickness measuring device in finish grinding.
- the finished thickness measuring device has a plurality of thickness sensors, and measures the thickness of the wafer at a plurality of points. In this case, the thickness of only the wafer excluding the protective tape is measured.
- the thickness of the protective tape may vary from wafer to wafer.
- the overall thickness of the wafer and the protective tape is measured by rough grinding using a contact-type thickness measurement meter, and the thickness of the wafer is measured using a non-contact-type thickness measurement meter by finish grinding The amount of grinding in rough grinding and finish grinding varies from wafer to wafer.
- the thickness of the protective tape differs for each wafer, the thickness of each wafer after grinding is It will be different. Then, in order to grind the wafers having different thicknesses to the same thickness, the amount of grinding at the time of the subsequent grinding will vary from wafer to wafer.
- the grinding amount varies in this way. Particularly in finish grinding, since the wafer is ground to the final finished thickness, the amount of grinding needs to be strictly controlled, and it is necessary that the amount of grinding be constant regardless of variations in the thickness of the protective tape. Become.
- the present invention has been made in view of the above circumstances, and in grinding and processing a processed surface of a substrate provided with a protective material on a non-processed surface, the substrate is properly made with a constant grinding amount for each substrate.
- the purpose is to grind.
- One aspect of the present invention for solving the above problems is a substrate processing system for processing a processing surface of a substrate having a protective material provided on a non-processing surface, and a grinding unit for grinding the processing surface of the substrate in a plurality of steps. And before grinding the processed surface of the substrate in the grinding unit, based on the protective material thickness measurement unit that measures the thickness of the protective material and the protective material thickness measured by the protective material thickness measurement unit. In the first grinding process, the second grinding amount in the second grinding process after the first grinding process for grinding the machined surface of the substrate in the grinding unit is constant for each substrate. And a control unit that calculates a grinding amount of 1.
- the thickness of the protective material is measured before grinding the machined surface of the substrate, and the first grinding amount in the first grinding process step is calculated using the measurement result.
- the first grinding amount is calculated in consideration of the thickness of the protective material, even if the thickness of the protective material varies from substrate to substrate, the substrate after being ground in the first grinding process step Can be made constant for each substrate.
- the second grinding amount in grinding the machined surface of the substrate in the second grinding process can be made constant, and the substrate can be ground appropriately.
- One embodiment of the present invention is a substrate processing method for processing a processed surface of a substrate provided with a protective material on a non-processed surface, the protective material thickness measuring step of measuring the thickness of the protective material; Thereafter, a plurality of grinding processing steps of grinding the processed surface of the substrate, and among the plurality of grinding processing steps based on the protective material thickness measured in the protective material thickness measuring step, The first grinding amount in the first grinding process is calculated so that the second grinding amount in the second grinding process after the first grinding process for grinding the machined surface becomes constant for each substrate. Do.
- a readable program storing a program that operates on a computer of a control unit that controls the substrate processing system so as to cause the substrate processing system to execute the substrate processing method It is a computer storage medium.
- the substrate in grinding and processing the machined surface of the substrate having the protective material provided on the non-machined surface, the substrate can be properly ground with a constant amount of grinding for each substrate. .
- FIG. 1 is a plan view schematically showing the outline of the configuration of a substrate processing system 1.
- the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to one another are defined, and the Z-axis positive direction is the vertically upward direction.
- the wafer W as a substrate is thinned.
- the surface to be processed ground
- non-processing surface W2 the surface on the opposite side to the processing surface W1
- the wafer W is, for example, a semiconductor wafer such as a silicon wafer or a compound semiconductor wafer.
- the wafer W includes a wafer main body M as a substrate main body, and a device D formed on the non-processing surface side of the wafer main body M.
- the surface of the wafer main body M constitutes a processing surface W1
- the surface of the device D constitutes a non-processing surface W2 of the wafer W.
- a protective material for protecting the device D for example, a protective tape P is attached.
- the entire wafer W to which the protective tape P is attached is referred to as a protective wafer Wp.
- the substrate processing system 1 stores the protected wafer Wp before processing in the cassette C, and transfers the plurality of protected wafers Wp from the outside into the substrate processing system 1 in cassette units, and processing A loading station 3 for storing the subsequent wafer W (wafer W in which the protective tape P has been peeled from the protective wafer Wp) in the cassette C and unloading the plurality of wafers W from the substrate processing system 1 in cassette units, A processing apparatus 4 for processing and thinning the wafer Wp, a post-processing apparatus 5 for performing post-processing of the protected wafer Wp after processing, protection between the loading station 2, the processing apparatus 4 and the post-processing apparatus 5 And a transfer station 6 for transferring the wafer Wp.
- the loading station 2, the transfer station 6, and the processing device 4 are arranged in this order in the Y-axis direction on the X-axis negative direction side.
- the unloading station 3 and the post-processing device 5 are arranged side by side in this order in the Y-axis direction on the X-axis positive direction side.
- a cassette mounting table 10 is provided at the loading station 2.
- a plurality of, for example, two cassettes C can be mounted on the cassette mounting table 10 in a row in the X-axis direction.
- the unloading station 3 also has the same configuration as the loading station 2.
- a cassette mounting table 20 is provided at the unloading station 3, and for example, two cassettes C can be mounted on the cassette mounting table 20 in a row in the X-axis direction.
- the loading station 2 and the unloading station 3 may be integrated into one loading and unloading station, and in such a case, the loading and unloading station is provided with a common cassette mounting table.
- processing such as grinding and cleaning is performed on the protected wafer Wp.
- the configuration of the processing device 4 will be described later.
- post-processing is performed on the protected wafer Wp processed by the processing apparatus 4.
- the post-processing for example, a mounting process of holding the protective wafer Wp on a dicing frame via a dicing tape, a peeling process of peeling the protective tape P attached to the wafer W in the protective wafer Wp, and the like are performed.
- the post-processing apparatus 5 carries the post-processing and carries the wafer W held by the dicing frame to the cassette C of the unloading station 3.
- a known device is used for the mounting process and the peeling process performed by the post-processing device 5 respectively.
- the transfer station 6 is provided with a wafer transfer area 30.
- a wafer transfer apparatus 32 movable on the transfer path 31 extending in the X-axis direction is provided.
- the wafer transfer apparatus 32 has a transfer fork 33 and a transfer pad 34 as a wafer holding unit for holding the protective wafer Wp.
- the tip of the transfer fork 33 branches into two, and the protective wafer Wp is held by suction.
- the transfer fork 33 transfers the protected wafer Wp before the grinding process.
- the transfer pad 34 has a circular shape with a diameter longer than the diameter of the protective wafer Wp in plan view, and adsorbs and holds the protective wafer Wp.
- the transfer pad 34 transfers the protective wafer Wp after the grinding process.
- the transfer fork 33 and the transfer pad 34 are configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis, respectively.
- a control unit 40 is provided in the substrate processing system 1.
- the control unit 40 is, for example, a computer and has a program storage unit (not shown).
- the program storage unit stores a program that controls processing of the protected wafer Wp (wafer W) in the substrate processing system 1.
- the program storage unit also stores a program for realizing the below-described wafer processing in the substrate processing system 1 by controlling the operation of drive systems such as the above-described various processing apparatuses and transport apparatuses.
- the program is recorded on a computer readable storage medium H such as a computer readable hard disk (HD), a flexible disk (FD), a compact disc (CD), a magnet optical desk (MO), a memory card, etc. And may be installed in the control unit 40 from the storage medium H.
- the processing apparatus 4 includes a rotary table 100, a transport unit 110, an alignment unit 120, a first cleaning unit 130, a second cleaning unit 140, a rough grinding unit 150 as a grinding unit, and grinding Middle grinding unit 160 as a part, finish grinding unit 170 as a grinding part, protective tape thickness measuring unit 180 as a protective material thickness measuring part, overall thickness measuring unit 190 as a total thickness measuring part, and substrate body thickness measuring part
- the rough grinding unit 150 corresponds to a first grinding portion in the present invention
- the middle grinding unit 160 and the finish grinding unit 170 respectively correspond to a second grinding portion in the present invention.
- the rotary table 100 is configured to be rotatable by a rotation mechanism (not shown). On the rotating table 100, four chucks 101 for attracting and holding the protective wafer Wp are provided. The chucks 101 are arranged uniformly on the same circumference as the rotary table 100, that is, every 90 degrees. The four chucks 101 are movable to the delivery position A0 and the processing positions A1 to A3 by rotation of the rotary table 100.
- the delivery position A0 is a position on the X-axis positive direction side and the Y-axis negative direction side of the rotary table 100, and the second cleaning unit 140 and the alignment unit are on the Y-axis negative direction side of the delivery position A0.
- 120 and the first cleaning unit 130 are arranged side by side.
- the alignment unit 120 and the first cleaning unit 130 are stacked and arranged in this order from above.
- the first processing position A1 is a position on the X-axis positive direction side and the Y-axis positive direction side of the rotary table 100, and the rough grinding unit 150 is disposed.
- the second processing position A2 is a position on the X axis negative direction side and the Y axis positive direction side of the rotary table 100, and the middle grinding unit 160 is disposed.
- the third processing position A3 is a position on the X axis negative direction side and the Y axis negative direction side of the rotary table 100, and the finish grinding unit 170 is disposed.
- the chuck 101 is held by a chuck base 102.
- the chuck 101 and the chuck base 102 are configured to be rotatable by a rotation mechanism (not shown).
- the transport unit 110 is an articulated robot including a plurality of, for example, three arms 111 to 113.
- the three arms 111 to 113 are connected by joints (not shown), and by these joints, the first arm 111 and the second arm 112 are configured to be pivotable around their respective proximal ends.
- a transfer pad 114 for attracting and holding the protective wafer Wp is attached to the first arm 111 at the tip.
- the third arm 113 at the proximal end is attached to a vertical movement mechanism 115 for moving the arms 111 to 113 in the vertical direction.
- the transfer unit 110 having such a configuration can transfer the protective wafer Wp to the delivery position A0, the alignment unit 120, the first cleaning unit 130, and the second cleaning unit 140.
- the alignment unit 120 adjusts the horizontal direction of the protective wafer Wp before the grinding process. For example, the position of the notch portion of the wafer W is adjusted by detecting the position of the notch portion of the wafer W while detecting the position of the notch portion of the wafer W while rotating the protective wafer Wp held by the spin chuck (not shown). The horizontal orientation of the protective wafer Wp is adjusted.
- the processing surface W1 of the wafer W after the grinding processing is cleaned, more specifically, spin-cleaned.
- the cleaning liquid is supplied from the cleaning liquid nozzle (not shown) to the processing surface W1 of the wafer W. Then, the supplied cleaning liquid diffuses on the processing surface W1, and the processing surface W1 is cleaned.
- the second cleaning unit 140 cleans the non-processed surface W2 of the wafer W in a state where the protective wafer Wp after the grinding processing is held by the transfer pad 114, that is, the protective tape P attached to the non-processed surface W2. , Cleaning the transfer pad 114.
- the processing surface W1 of the wafer W is roughly ground.
- the rough grinding unit 150 has a rough grinding portion 151 having an annular shape and a rotatable rough grinding wheel (not shown).
- the rough grinding portion 151 is configured to be movable in the vertical direction and the horizontal direction along the support column 152. Then, while the processing surface W1 of the wafer W held by the chuck 101 is in contact with the rough grinding wheel, the processing surface W1 of the wafer W is roughly ground by rotating the chuck 101 and the rough grinding wheel respectively.
- the processing surface W1 of the wafer W is middle ground.
- the middle grinding unit 160 has a middle grinding portion 161 having an annular shape and a rotatable middle grinding wheel (not shown).
- the middle grinding portion 161 is configured to be movable in the vertical direction and the horizontal direction along the support column 162.
- the grain size of the abrasive grains of the medium grinding wheel is smaller than the grain size of the abrasive grains of the rough grinding stone.
- the processing surface W1 of the wafer W is finish ground.
- the finish grinding unit 170 has a finish grinding portion 171 provided with a ring-shaped rotatable finish grinding wheel (not shown).
- the finish grinding unit 171 is configured to be movable in the vertical direction and the horizontal direction along the support 172.
- the grain size of the abrasive grains of the finish grinding wheel is smaller than the grain size of the abrasive grains of the medium grinding wheel.
- the protective tape thickness measurement unit 180 is provided, for example, above the alignment unit 120. As shown in FIG. 4, the protective tape thickness measurement unit 180 measures the thickness of the protective tape P with respect to the protective wafer Wp held by the transfer pad 114 of the transfer unit 110. The protective tape thickness measurement unit 180 measures the thickness of the protective tape P of the protective wafer Wp being transported from the alignment unit 120 to the delivery position A0.
- the protective tape thickness measurement unit 180 includes a sensor 181 and a calculation unit 182.
- a sensor that measures the thickness of the protective tape P without contacting the protective tape P is used, and for example, a white confocal (confocal) optical system sensor is used.
- the sensor 181 irradiates the protective tape P with light having a predetermined wavelength band, and further receives the reflected light reflected from the surface P1 of the protective tape P and the reflected light reflected from the back surface P2.
- the calculation unit 182 calculates the thickness of the protective tape P based on the both reflected lights received by the sensor 181.
- a white confocal optical system sensor is used as the sensor 181 of the protective tape thickness measurement unit 180, but the configuration of the protective tape thickness measurement unit 180 is not limited thereto. Any measuring device can be used as long as it measures thickness. Also, a plurality of sensors 181 may be provided.
- the entire thickness measurement unit 190 is provided to each of the rough grinding unit 150 and the middle grinding unit 160. As shown in FIG. 5, the entire thickness measurement unit 190 includes a chuck side height gauge 191, a wafer side height gauge 192, and a calculation unit 193.
- the chuck side height gauge 191 includes a probe 194, and the tip end of the probe 194 contacts the upper surface 102a of the chuck base 102 to measure the height position of the upper surface 102a.
- the upper surface 102 a of the chuck base 102 is flush with the upper surface of the chuck 101 that holds the protective wafer Wp.
- the wafer side height gauge 192 includes a probe 195, and the tip of the probe 195 contacts the processing surface W1 of the wafer W, and measures the height position of the processing surface W1.
- the calculation unit 193 subtracts the chuck side height gauge 191 from the measurement value of the wafer side height gauge 192 to calculate the entire thickness of the protective wafer Wp.
- the total thickness is the sum of the thickness of the wafer W (the sum of the thickness of the wafer main body M and the thickness of the device D) and the thickness of the protective tape P.
- Wafer body thickness measurement unit 200 is provided in finish grinding unit 170.
- the wafer body thickness measurement unit 200 includes a sensor 201 and a calculation unit 202.
- the sensor 201 a sensor that measures the thickness of the wafer body M without contacting the wafer body M is used, and for example, a white confocal (confocal) optical system sensor is used.
- the sensor 201 irradiates the wafer main body M with light having a predetermined wavelength band, and further receives the reflected light reflected from the front surface of the wafer main body M and the reflected light reflected from the back surface.
- the calculation unit 202 calculates the thickness of the wafer main body M based on the both reflected lights received by the sensor 201.
- the sensor 201 can measure the thickness without contacting the wafer main body M, so that the wafer main body M can be prevented from being scratched.
- the wafer W wafer main body M
- the finish grinding unit 170 the wafer W (wafer main body M) is ground and thinned, and is easily scratched. Therefore, it is useful to be able to measure the thickness of the wafer main body M without contact.
- a white confocal optical system sensor is used as the sensor 201 of the wafer body thickness measurement unit 200, but the configuration of the wafer body thickness measurement unit 200 is not limited to this. Any measuring device can be used as long as it measures thickness. In addition, a plurality of sensors 201 may be provided.
- FIG. 8 is an explanatory view showing a state in which the processing surface W1 of the wafer W is ground in the substrate processing system 1 (processing apparatus 4).
- the total thickness of the protective wafer Wp is Twp0
- the thickness of the wafer body M is Tm0
- the thickness of the device D is Td
- the thickness of the protective tape P is Tp. It is.
- the rough grinding in FIG. 8B, the intermediate grinding in FIG. 8C, and the finish grinding in FIG. 8D are sequentially performed, and the wafer W is thinned.
- the grinding amounts of the processing surface W1 of the wafer W in rough grinding, middle grinding and finish grinding are G1, G2 and G3, and the target thicknesses of the wafer W after grinding are H1, H2 and H3.
- the cassette C containing a plurality of protective wafers Wp is placed on the cassette mounting table 10 of the loading station 2.
- the protective wafer Wp is stored such that the non-processed surface W2 of the wafer W to which the protective tape P is attached is directed upward.
- the protected wafer Wp in the cassette C is taken out by the transfer fork 33 of the wafer transfer apparatus 32 and transferred to the processing apparatus 4.
- the front and back surfaces are reversed such that the processing surface W1 of the wafer W is directed upward by the transfer fork 33.
- the protected wafer Wp transferred to the processing apparatus 4 is delivered to the alignment unit 120. Then, in the alignment unit 120, the horizontal direction of the protective wafer Wp is adjusted (Step S1 in FIG. 7).
- the thickness Tp of the protective tape P shown in FIG. 8A is measured by the protective tape thickness measurement unit 180 (step S2 in FIG. 7).
- the measurement result of the protective tape thickness measurement unit 180 is output from the calculation unit 182 to the control unit 40.
- the protected wafer Wp is transported by the transport unit 110 from the alignment unit 120 to the delivery position A0 and delivered to the chuck 101 at the delivery position A0. Thereafter, the rotary table 100 is rotated 90 degrees counterclockwise to move the chuck 101 to the first processing position A1.
- the whole thickness Twp0 of the protective wafer Wp shown in FIG. 8A is measured by the whole thickness measuring unit 190 (Step S3 in FIG. 7).
- the measurement result of the entire thickness measurement unit 190 is output from the calculation unit 193 to the control unit 40.
- the rough grinding amount G1 of the processing surface W1 of the wafer W in the rough grinding unit 150 is determined based on the thickness Tp of the protective tape P measured in step S2 and the total thickness Twp0 measured in step S3. Calculate (step S4 in FIG. 7). Specifically, first, a target thickness H1 of the wafer W to be left after the rough grinding shown in FIG. 8B is set. Then, the rough grinding amount G1 is calculated using the following equation (1). The rough grinding amount G1 corresponds to the first grinding amount in the present invention.
- G1 Twp0-Tp-H1 ⁇ ⁇ ⁇ ⁇ ⁇ (1)
- the processing surface W1 of the wafer W is roughly ground as shown in FIG. 8B by the rough grinding unit 150 based on the rough grinding amount G1 calculated in step S4 (step S5 in FIG. 7).
- the rotary table 100 is rotated 90 degrees counterclockwise to move the chuck 101 to the second processing position A2. Then, before middle grinding by middle grinding unit 160, total thickness Twp1 of protective wafer Wp shown in FIG. 8B is measured by total thickness measurement unit 190 (step S6 in FIG. 7). The measurement result of the entire thickness measurement unit 190 is output from the calculation unit 193 to the control unit 40.
- the middle grinding unit 160 middle-grinds the processing surface W1 of the wafer W as shown in FIG. 8C (step S8 in FIG. 7).
- the rotary table 100 is rotated 90 degrees counterclockwise to move the chuck 101 to the third processing position A3. Then, before the finish grinding by the finish grinding unit 170, the thickness Tm2 of the wafer body M shown in FIG. 8C is measured by the wafer body thickness measurement unit 200 (step S9 in FIG. 7). The measurement result of the wafer body thickness measurement unit 200 is output from the calculation unit 202 to the control unit 40.
- the thickness Td of the device D used in step S10 may or may not be known in advance before wafer processing. If the thickness Td of the device D is known in advance before the wafer processing, the equation (3) may be entered as it is.
- the thickness Td of the device D when it is not known before wafer processing, it can be calculated from the thickness Tm2 of the wafer main body M measured in step S9. In such a case, there are, for example, two methods of calculating the thickness Td of the device D. As a first calculation method, the thickness Td of the device D can be calculated by subtracting the thickness Tm2 of the wafer main body M from the target thickness H2 of the wafer W after middle grinding.
- the total thickness measurement unit 190 is also provided to the finish grinding unit 170, and before the finish grinding by the finish grinding unit 170, the entire thickness Twp2 of the protected wafer Wp shown in FIG. Do. Then, the thickness Td of the device D can be calculated using the following equation (4).
- Td Twp2-Tm2-Tp (4)
- the finish grinding unit 170 performs finish grinding on the processing surface W1 of the wafer W as shown in FIG. 8 (d) (step S11 in FIG. 7).
- the target thickness H3 of the wafer W is the same as the target thickness of the wafer main body M.
- the processing surface W1 of the wafer W is finish ground until the thickness of the wafer main body M changes from Tm3 to H3.
- the rotary table 100 is rotated 90 degrees counterclockwise, or the rotary table 100 is rotated 270 degrees clockwise to move the chuck 101 to the delivery position A0.
- the processing surface W1 of the wafer W is roughly cleaned by the cleaning liquid using the cleaning liquid nozzle (not shown) (step S12 in FIG. 7).
- cleaning is performed to remove dirt on the processing surface W1 to a certain extent.
- the protection wafer Wp is transferred by the transfer unit 110 from the delivery position A0 to the second cleaning unit 140. Then, in the second cleaning unit 140, the non-processed surface W2 (protective tape P) of the wafer W is cleaned and dried in a state where the protected wafer Wp is held by the transfer pad 114 (step S13 in FIG. 7). .
- the protective wafer Wp is transferred by the transfer unit 110 from the second cleaning unit 140 to the first cleaning unit 130.
- the processing surface W1 of the wafer W is finish-cleaned with the cleaning liquid using the cleaning liquid nozzle (not shown) (step S14 in FIG. 7).
- the processing surface W1 is cleaned and dried to a desired degree of cleanliness.
- the protected wafer Wp is transferred by the wafer transfer apparatus 32 from the first cleaning unit 130 to the post-processing apparatus 5. Then, in the post-processing apparatus 5, post-processing such as mounting processing for holding the protective wafer Wp on the dicing frame and peeling processing for peeling the protective tape P attached to the protective wafer Wp is performed (step S15 in FIG. 7). ).
- a series of processing can be continuously performed on a plurality of protected wafers Wp, and the throughput of wafer processing can be improved.
- the middle grinding unit 180 by measuring the thickness Tp of the protective tape P with the protective tape thickness measurement unit 180, even if the thickness Tp of the protective tape P varies among the protective wafers Wp, at least the middle grinding unit The middle grinding amount G2 at 160 and the finishing grinding amount G3 at the finishing grinding unit 170 can be made constant. And grinding of processing side W1 of wafer W can be performed appropriately.
- FIG. 9A shows a protective wafer Wpa as a reference.
- FIG. 9B shows a protective wafer Wpb in which the thickness of the protective tape P is different from that of the protective wafer Wpa.
- FIG. 9C shows a protected wafer Wpc in which the thickness of the wafer W before the grinding process is different from that of the protected wafer Wpa.
- the grinding amounts G1, G2 and G3 in rough grinding, middle grinding and finish grinding are calculated by the following formulas (1), (2) and (3), respectively.
- G1 Twp0-Tp-H1 ⁇ ⁇ ⁇ ⁇ ⁇ (1)
- G2 Twp1-Tp-H2 ...
- G3 Tm2 + Td-H3 ⁇ ⁇ ⁇ ⁇ ⁇ (3)
- the thicknesses of the protective tapes Pa and Pb are Tpa and Tpb, respectively, and the thickness Tpb is larger than the thickness Tpa.
- the thicknesses of the wafer bodies Ma and Mb before the grinding process are the same for Tma0 and Tmb0, respectively, and the thicknesses for the devices Da and Db are the same for Tda and Tdb, respectively.
- the rough grinding amount G1 in the rough grinding is calculated by the above equation (1), but (Twpa0-Tpa) in the protected wafer Wpa and (Twpb0-Tpb) in the protected wafer Wpb are the same. Then, rough grinding amount Ga1 for protected wafer Wpa and rough grinding amount Gb1 for protected wafer Wpb become equal.
- the middle grinding amount Ga2 for the protection wafer Wpa and the middle grinding amount Gb2 for the protection wafer Wpb are the same from the above equation (2).
- the finish grinding amount G3 in the finish grinding the finish grinding amount Ga3 for the protection wafer Wpa and the finish grinding amount Gb3 for the protection wafer Wpb are the same from the above equation (3).
- the amounts Ga3 and Gb3 can be made the same.
- protection wafers Wpa and Wpc shown in FIGS. 9A and 9C will be described.
- the thicknesses of the wafer bodies Ma and Mc before the grinding process are Tma0 and Tmc0, respectively, and the thickness Tmc0 is larger than the thickness Tma0.
- the thicknesses of the protective tapes Pa and Pb are the same for Tpa and Tpb, respectively, and the thicknesses of the devices Da and Db are also the same for Tda and Tdb, respectively.
- the overall thicknesses Twpa1 and Twpc1 after rough grinding can be made the same.
- the middle grinding amount Ga2 for the protective wafer Wpa and the middle grinding amount Gc2 for the protective wafer Wpc become the same.
- the finish grinding amount G3 in the finish grinding the finish grinding amount Ga3 for the protection wafer Wpa and the finish grinding amount Gc3 for the protection wafer Wpc are the same from the above equation (3).
- the middle grinding amounts Ga2 and Gb2 and the finish grinding amounts Ga3 and Gb3 are set for each of the protection wafers Wpa and Wpb. It can be the same.
- the subsequent processing becomes uneven.
- the overall thicknesses Twpa1 and Twpc1 after rough grinding are the same, the middle grinding amounts Ga2 and Gb2, and the finish grinding amounts Ga3 and Gb3 are also the same, that is, the remaining damage layer is the same. Because the subsequent processing (medium grinding, finish grinding) will be the same conditions. As a result, uniform processing can be performed for each of the protected wafers Wpa and Wpb.
- the rough grinding in step S5 may be divided into a plurality of steps.
- the rough grinding in step S5 is divided into, for example, steps from air cutting to lower the rough grinding portion 151 (coarse grinding wheel) at low speed, to step S51 to perform rough grinding at high speed, and to step S52 to perform rough grinding to low speed. It will be.
- the grinding amount G12 be a grinding amount that does not apply a stress to the wafer W, and be a fixed value common to a plurality of wafers W.
- the grinding amount G11 in the high-speed step S51 is set as a fluctuation value that fluctuates for each of the protection wafers Wp. Specifically, after the rough grinding amount G1 is calculated for each protection wafer Wp, the grinding amount G12 (fixed value) of each step S52 is subtracted from the rough grinding amount G1, and the grinding amount G11 of step S51 is calculated. calculate.
- the grinding amount G11 of the high-speed step S51 is different for each protection wafer Wp
- the grinding amount G12 of the low-speed step S52 can be fixed. Then, in the second half process of the rough grinding, the stress applied to the wafer W can be reduced as compared with the first half process, and the rough grinding can be appropriately performed.
- Step S52 may be further divided into a plurality of steps. Further, depending on the thickness of the wafer W, step S51 is omitted, and grinding is performed only with the grinding amount G12 (fixed value) of step S52. For example, even when there are a plurality of fixed values of the grinding amount in a plurality of steps, the first half of the plurality of steps may be omitted and grinding may be performed only with the grinding amount of the fixed value.
- the entire thickness of the protection wafer Wp is measured by the contact total thickness measurement unit 190 in the middle grinding in step S8, but the total thickness of the protection wafer Wp is measured in the first half processing of the middle grinding.
- the thickness of the wafer main body M may be measured in the second half process.
- the entire thickness of the protective wafer Wp can be measured by the contact total thickness measurement unit 190 (first half process).
- the thickness of the wafer main body M is measured by the non-contact type wafer main body thickness measurement unit 200 (second half process).
- the middle grinding amount G21 in the first half processing and the second grinding amount G22 in the second half processing are divided and calculated.
- the first half process based on the total thickness Twp1 of the protective wafer Wp measured by the entire thickness measurement unit 190, the thickness Tp of the protective tape P measured in step S2, and the predetermined thickness (H2)
- the front half grinding amount G21 is calculated using the above equation (2).
- the second half grinding amount G22 is calculated using the equation (3). And based on these first half grinding amount G21 and second half grinding amount G22, it is possible to appropriately carry out middle grinding of the processing surface W1 of the wafer W. Note that a value input in advance may be used as the thickness Td of the device D.
- the overall thickness of the protected wafer Wp may be measured in the first half process, and the thickness of the wafer main body M may be measured in the second half process.
- the finish grinding amount G3 is divided and calculated into the first half grinding amount G31 and the second half grinding amount G32.
- the protective tape thickness measurement unit 180 measures the thickness of the protective tape P with respect to the protective wafer Wp being transported by the transport unit 110. As long as the processing surface W1 of the wafer W is not roughly ground, it can be disposed at an arbitrary position. That is, the protective tape thickness measurement unit 180 can be disposed between the loading station 2 and the rough grinding unit 150. Specifically, the protective tape thickness measurement unit 180 may be provided inside the alignment unit 120 or may be provided inside the loading station 2.
- the processing apparatus 4 includes the rough grinding unit 150, the middle grinding unit 160, and the finish grinding unit 170, but the configuration of the unit is not limited to this.
- the rough grinding unit 150 may be disposed at the first processing position A1, the finish grinding unit 170 may be disposed at the second processing position A2, and the polishing unit (not shown) may be disposed at the third processing position A3. . Even in such a case, it is possible to appropriately grind the processing surface W1 of the wafer W by calculating the rough grinding amount G1 in the rough grinding unit 150 and the finishing grinding amount G3 in the finishing grinding unit 170 as in the above embodiment. it can.
- the protective tape P is attached to the non-processed surface W2 of the wafer W in order to protect the device D, but the protective material of the device D is not limited to this.
- a support substrate such as a support wafer or a glass substrate may be bonded to the non-processed surface W2 of the wafer W, and the present invention can be applied even in such a case.
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本願は、2017年12月22日に日本国に出願された特願2017-246732号に基づき、優先権を主張し、その内容をここに援用する。
先ず、本実施形態にかかる基板処理システムの構成について説明する。図1は、基板処理システム1の構成の概略を模式的に示す平面図である。なお、以下においては、位置関係を明確にするために、互いに直交するX軸方向、Y軸方向及びZ軸方向を規定し、Z軸正方向を鉛直上向き方向とする。
次に、上述した加工装置4の構成について説明する。図3~図6に示すように加工装置4は、回転テーブル100、搬送ユニット110、アライメントユニット120、第1の洗浄ユニット130、第2の洗浄ユニット140、研削部としての粗研削ユニット150、研削部としての中研削ユニット160、研削部としての仕上研削ユニット170、保護材厚み測定部としての保護テープ厚み測定ユニット180、全体厚み測定部としての全体厚み測定ユニット190、及び基板本体厚み測定部としてのウェハ本体厚み測定ユニット200を有している。なお、本実施形態では、粗研削ユニット150が本発明における第1の研削部に相当し、中研削ユニット160と仕上研削ユニット170がそれぞれ本発明における第2の研削部に相当する。
次に、以上のように構成された基板処理システム1を用いて行われるウェハ処理について、図7のフローチャートに沿って説明する。
G1=Twp0-Tp-H1 ・・・・(1)
G2=Twp1-Tp-H2 ・・・・(2)
G3=Tm2+Td-H3 ・・・・(3)
Td=Twp2-Tm2-Tp ・・・・(4)
G1=Twp0-Tp-H1 ・・・・(1)
G2=Twp1-Tp-H2 ・・・・(2)
G3=Tm2+Td-H3 ・・・・(3)
以上の実施形態において、ステップS5の粗研削は、複数ステップに分けて行われてもよい。ステップS5の粗研削は、例えば低速で粗研削部151(粗研削砥石)を下降させるエアカットから、高速で粗研削を行うステップS51、低速で粗研削を行うステップS52などのステップに分かれて行われる。
2 搬入ステーション
3 搬出ステーション
4 加工装置
5 後処理装置
6 搬送ステーション
40 制御部
150 粗研削ユニット
160 中研削ユニット
170 仕上研削ユニット
180 保護テープ厚み測定ユニット
190 全体厚み測定ユニット
200 ウェハ本体厚み測定ユニット
D デバイス
M ウェハ本体
P 保護テープ
W ウェハ
W1 加工面
W2 非加工面
Wp 保護ウェハ
Claims (14)
- 非加工面に保護材が設けられた基板の加工面を加工する基板処理システムであって、
前記基板の加工面を複数の工程で研削する研削部と、
前記研削部で前記基板の加工面を研削する前に、前記保護材の厚みを測定する保護材厚み測定部と、
前記保護材厚み測定部で測定された保護材厚みに基づいて、前記研削部で前記基板の加工面を研削する第1の研削処理工程以降の第2の研削処理工程における第2の研削量が基板毎に一定になるように、前記第1の研削処理工程における第1の研削量を算出する制御部と、を有する。 - 請求項1に記載の基板処理システムにおいて、
前記基板と前記保護材の全体厚みを測定する全体厚み測定部を有し、
前記制御部は、前記第1の研削処理工程で前記基板が研削される前に前記全体厚み測定部で測定された全体厚みと、前記保護材厚み測定部で測定された保護材厚みと、前記第1の研削処理工程で研削された後の前記基板の目標厚みと、に基づいて、前記第1の研削処理工程における第1の研削量を算出する。 - 請求項2に記載の基板処理システムにおいて、
前記第1の研削処理工程では、複数ステップに分けて前記基板の加工面を研削し、
前記制御部は、
前記複数ステップの研削のうち、前記基板の加工面を研削する第1のステップ以降の第2のステップにおける研削量を設定し、
前記全体厚み測定部で測定された全体厚みと、前記保護材厚み測定部で測定された保護材厚みと、前記第2のステップで設定された研削量と、に基づいて、前記第1のステップにおける研削量を算出する。 - 請求項1に記載の基板処理システムにおいて、
前記基板と前記保護材の全体厚みを測定する全体厚み測定部を有し、
前記制御部は、前記第2の研削処理工程で前記基板が研削される前に前記全体厚み測定部で測定された全体厚みと、前記保護材厚み測定部で測定された保護材厚みと、前記第2の研削処理工程で研削された後の前記基板の目標厚みと、に基づいて、前記第2の研削処理工程における第2の研削量を算出する。 - 請求項1に記載の基板処理システムにおいて、
前記基板処理システムは、
前記基板と前記保護材の全体厚みが所定厚みに到達するまで、全体厚みを測定する全体厚み測定部と、
全体厚みが前記所定厚みに到達した後、前記基板の厚みを測定する基板厚み測定部と、を有し、
前記制御部は、
前記第2の研削処理工程で前記基板が研削される前に前記全体厚み測定部で測定された全体厚みと、前記保護材厚み測定部で測定された保護材厚みと、前記所定厚みとに基づいて、前記第2の研削処理工程における第2の前半研削量を算出し、
その後、全体厚みが前記所定厚みに到達した後、前記基板厚み測定部で測定された基板厚みに基づいて、前記第2の研削処理工程で研削された後の前記基板の目標厚みまで研削するように前記研削部を制御する。 - 請求項1に記載の基板処理システムにおいて、
前記基板は、基板本体と、前記基板本体の非加工面側に形成され、前記保護材に保護されたデバイスとを備え、
前記基板処理システムは、前記基板本体の厚みを測定する基板本体厚み測定部を有し、
前記制御部は、前記第2の研削処理工程で前記基板が研削される前に前記基板本体厚み測定部で測定された基板本体厚みと、前記基板本体厚みから算出される前記デバイスの厚みと、前記第2の研削処理工程で研削された後の前記基板の目標厚みと、に基づいて、前記第2の研削処理工程における第2の研削量を算出する。 - 請求項1に記載の基板処理システムにおいて、
前記研削部は、前記第1の研削処理工程を行う第1の研削部と、前記第2の研削処理工程を行う第2の研削部とを有する。 - 非加工面に保護材が設けられた基板の加工面を加工する基板処理方法であって、
前記保護材の厚みを測定する保護材厚み測定工程と、
その後、前記基板の加工面を研削する複数の研削処理工程と、を有し、
前記保護材厚み測定工程で測定された保護材厚みに基づいて、前記複数の研削処理工程のうち、前記基板の加工面を研削する第1の研削処理工程以降の第2の研削処理工程における第2の研削量が基板毎に一定になるように、前記第1の研削処理工程における第1の研削量を算出する。 - 請求項8に記載の基板処理方法において、
前記第1の研削処理工程において前記基板と前記保護材の全体厚みを測定する第1の全体厚み測定工程を有し、
前記第1の研削処理工程で前記基板が研削される前に前記第1の全体厚み測定工程で測定された全体厚みと、前記保護材厚み測定工程で測定された保護材厚みと、前記第1の研削処理工程で研削された後の前記基板の目標厚みと、に基づいて、前記第1の研削処理工程における第1の研削量を算出する。 - 請求項9に記載の基板処理方法において、
前記第1の研削処理工程では、複数ステップに分けて前記基板の加工面を研削し、
前記複数ステップの研削のうち、前記基板の加工面を研削する第1のステップ以降の第2のステップにおける研削量を設定し、
前記第1の全体厚み測定工程で測定された全体厚みと、前記保護材厚み測定工程で測定された保護材厚みと、前記第2のステップで設定された研削量と、に基づいて、前記第1のステップにおける研削量を算出する。 - 請求項8に記載の基板処理方法において、
前記第2の研削処理工程において前記基板と前記保護材の全体厚みを測定する第2の全体厚み測定工程を有し、
前記第2の研削処理工程で前記基板が研削される前に前記第2の全体厚み測定工程で測定された全体厚みと、前記保護材厚み測定工程で測定された保護材厚みと、前記第2の研削処理工程で研削された後の前記基板の目標厚みと、に基づいて、前記第2の研削処理工程における第2の研削量を算出する。 - 請求項8に記載の基板処理方法において、
前記基板処理方法は、
前記第2の研削処理工程において前記基板と前記保護材の全体厚みが所定厚みに到達するまで、全体厚みを測定する第2の全体厚み測定工程と、
前記第2の研削処理工程において全体厚みが前記所定厚みに到達した後、前記基板の厚みを測定する基板厚み測定工程と、を有し、
前記第2の研削処理工程で前記基板が研削される前に前記第2の全体厚み測定工程で測定された全体厚みと、前記保護材厚み測定工程で測定された保護材厚みと、前記所定厚みとに基づいて、前記第2の研削処理工程における第2の前半研削量を算出し、
その後、全体厚みが前記所定厚みに到達した後、前記基板厚み測定工程で測定された基板厚みに基づいて、前記第2の研削処理工程で研削された後の前記基板の目標厚みまで研削する。 - 請求項8に記載の基板処理方法において、
前記基板は、基板本体と、前記基板本体の非加工面側に形成され、前記保護材に保護されたデバイスとを備え、
前記基板処理方法は、前記第2の研削処理工程において前記基板本体の厚みを測定する基板本体厚み測定工程を有し、
前記第2の研削処理工程で前記基板が研削される前に前記基板本体厚み測定工程で測定された基板本体厚みと、前記基板本体厚みから算出される前記デバイスの厚みと、前記第2の研削処理工程で研削された後の前記基板の目標厚みと、に基づいて、前記第2の研削処理工程における第2の研削量を算出する。 - 非加工面に保護材が設けられた基板の加工面を加工する基板処理方法を基板処理システムによって実行させるように、当該基板処理システムを制御する制御部のコンピュータ上で動作するプログラムを格納した読み取り可能なコンピュータ記憶媒体であって、
前記基板処理方法は、
前記保護材の厚みを測定する保護材厚み測定工程と、
その後、前記基板の加工面を研削する複数の研削処理工程と、を有し、
前記保護材厚み測定工程で測定された保護材厚みに基づいて、前記複数の研削処理工程のうち、前記基板の加工面を研削する第1の研削処理工程以降の第2の研削処理工程における第2の研削量が基板毎に一定になるように、前記第1の研削処理工程における第1の研削量を算出する。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019560925A JP6968201B2 (ja) | 2017-12-22 | 2018-12-03 | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 |
KR1020207020593A KR102604525B1 (ko) | 2017-12-22 | 2018-12-03 | 기판 처리 시스템, 기판 처리 방법 및 컴퓨터 기억 매체 |
CN201880080582.5A CN111479654B (zh) | 2017-12-22 | 2018-12-03 | 基板处理***、基板处理方法以及计算机存储介质 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017-246732 | 2017-12-22 | ||
JP2017246732 | 2017-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019124032A1 true WO2019124032A1 (ja) | 2019-06-27 |
Family
ID=66994680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/044366 WO2019124032A1 (ja) | 2017-12-22 | 2018-12-03 | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6968201B2 (ja) |
KR (1) | KR102604525B1 (ja) |
CN (1) | CN111479654B (ja) |
TW (1) | TWI806935B (ja) |
WO (1) | WO2019124032A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021166668A1 (ja) * | 2020-02-17 | 2021-08-26 | 東京エレクトロン株式会社 | 加工方法及び加工装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335458A (ja) * | 2006-06-12 | 2007-12-27 | Disco Abrasive Syst Ltd | ウエーハ研削装置 |
JP2010040821A (ja) * | 2008-08-06 | 2010-02-18 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体製造装置 |
JP2010199227A (ja) * | 2009-02-24 | 2010-09-09 | Disco Abrasive Syst Ltd | 研削装置 |
JP2011245610A (ja) * | 2010-05-31 | 2011-12-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2016132047A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社ディスコ | 被加工物の研削方法 |
JP2017056523A (ja) * | 2015-09-17 | 2017-03-23 | 株式会社ディスコ | 研削装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002343756A (ja) * | 2001-05-21 | 2002-11-29 | Tokyo Seimitsu Co Ltd | ウェーハ平面加工装置 |
DE102006044367B4 (de) * | 2006-09-20 | 2011-07-14 | Siltronic AG, 81737 | Verfahren zum Polieren einer Halbleiterscheibe und eine nach dem Verfahren herstellbare polierte Halbleiterscheibe |
JP2008264913A (ja) | 2007-04-18 | 2008-11-06 | Disco Abrasive Syst Ltd | 研削加工装置 |
CN101367192B (zh) * | 2007-08-17 | 2011-05-11 | 中芯国际集成电路制造(上海)有限公司 | 晶圆背面研磨方法 |
JP2012187654A (ja) | 2011-03-09 | 2012-10-04 | Disco Corp | 研削装置 |
JP6143572B2 (ja) * | 2013-06-18 | 2017-06-07 | 株式会社Screenホールディングス | 基板保持回転装置およびそれを備えた基板処理装置、ならびに基板処理方法 |
-
2018
- 2018-12-03 CN CN201880080582.5A patent/CN111479654B/zh active Active
- 2018-12-03 KR KR1020207020593A patent/KR102604525B1/ko active IP Right Grant
- 2018-12-03 JP JP2019560925A patent/JP6968201B2/ja active Active
- 2018-12-03 WO PCT/JP2018/044366 patent/WO2019124032A1/ja active Application Filing
- 2018-12-04 TW TW107143370A patent/TWI806935B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335458A (ja) * | 2006-06-12 | 2007-12-27 | Disco Abrasive Syst Ltd | ウエーハ研削装置 |
JP2010040821A (ja) * | 2008-08-06 | 2010-02-18 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法及び半導体製造装置 |
JP2010199227A (ja) * | 2009-02-24 | 2010-09-09 | Disco Abrasive Syst Ltd | 研削装置 |
JP2011245610A (ja) * | 2010-05-31 | 2011-12-08 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
JP2016132047A (ja) * | 2015-01-16 | 2016-07-25 | 株式会社ディスコ | 被加工物の研削方法 |
JP2017056523A (ja) * | 2015-09-17 | 2017-03-23 | 株式会社ディスコ | 研削装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021166668A1 (ja) * | 2020-02-17 | 2021-08-26 | 東京エレクトロン株式会社 | 加工方法及び加工装置 |
JPWO2021166668A1 (ja) * | 2020-02-17 | 2021-08-26 | ||
JP7466622B2 (ja) | 2020-02-17 | 2024-04-12 | 東京エレクトロン株式会社 | 加工方法及び加工装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20200099565A (ko) | 2020-08-24 |
TWI806935B (zh) | 2023-07-01 |
CN111479654B (zh) | 2022-07-01 |
CN111479654A (zh) | 2020-07-31 |
JP6968201B2 (ja) | 2021-11-17 |
KR102604525B1 (ko) | 2023-11-22 |
JPWO2019124032A1 (ja) | 2020-12-17 |
TW201929078A (zh) | 2019-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102450002B1 (ko) | 기판 처리 시스템, 기판 처리 방법 및 컴퓨터 기억 매체 | |
JP6937370B2 (ja) | 研削装置、研削方法及びコンピュータ記憶媒体 | |
KR102607483B1 (ko) | 기판 처리 시스템, 기판 처리 방법 및 컴퓨터 기억 매체 | |
JPWO2019013042A1 (ja) | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 | |
JP6385734B2 (ja) | 研削方法 | |
JP2022075811A (ja) | 加工装置、加工方法及びコンピュータ記憶媒体 | |
JP7002874B2 (ja) | 基板処理システム | |
WO2019124032A1 (ja) | 基板処理システム、基板処理方法及びコンピュータ記憶媒体 | |
JP7261786B2 (ja) | 加工装置 | |
CN114641369B (zh) | 基板处理方法和基板处理装置 | |
JP2022046137A (ja) | 基板処理方法及び基板処理システム | |
WO2021166668A1 (ja) | 加工方法及び加工装置 | |
CN114641370B (zh) | 基板处理方法和基板处理装置 | |
JP2020009849A (ja) | 基板処理システム及び基板処理方法 | |
JP2022125928A (ja) | 処理方法及び処理装置 | |
JP2022018648A (ja) | 基板処理装置及び記憶媒体 | |
JP2019114684A (ja) | 基板処理システム、基板処理方法、プログラム及びコンピュータ記憶媒体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18891474 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2019560925 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20207020593 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18891474 Country of ref document: EP Kind code of ref document: A1 |