WO2018214199A1 - 微发光二极管显示面板及其制作方法 - Google Patents

微发光二极管显示面板及其制作方法 Download PDF

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Publication number
WO2018214199A1
WO2018214199A1 PCT/CN2017/089250 CN2017089250W WO2018214199A1 WO 2018214199 A1 WO2018214199 A1 WO 2018214199A1 CN 2017089250 W CN2017089250 W CN 2017089250W WO 2018214199 A1 WO2018214199 A1 WO 2018214199A1
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Prior art keywords
layer
substrate
emitting diode
electrode
insulating layer
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PCT/CN2017/089250
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English (en)
French (fr)
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卢马才
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深圳市华星光电技术有限公司
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Priority to JP2019565004A priority Critical patent/JP6916910B2/ja
Priority to KR1020197037966A priority patent/KR102341625B1/ko
Priority to US15/548,097 priority patent/US10269779B2/en
Priority to EP17911140.6A priority patent/EP3640990A4/en
Publication of WO2018214199A1 publication Critical patent/WO2018214199A1/zh

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    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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Definitions

  • the present invention relates to the field of display technologies, and in particular, to a micro light emitting diode display panel and a method of fabricating the same.
  • Flat display devices are widely used in various consumer electronics such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, desktop computers, etc. due to their high image quality, power saving, thin body and wide application range. Products have become the mainstream in display devices.
  • a micro LED display is a display that realizes image display by using a high-density and small-sized LED array integrated on one substrate as a display pixel. As with a large-sized outdoor LED display, each pixel can be addressed. It can be seen as a miniature version of the outdoor LED display, which reduces the pixel distance from millimeter to micrometer.
  • the Micro LED display is the same as the Organic Light-Emitting Diode (OLED) display. Light-emitting display, but Micro LED display has the advantages of better material stability, longer life, no image imprinting than OLED display, and is considered to be the biggest competitor of OLED display.
  • the micro-light-emitting diode In the fabrication process of the micro-light-emitting diode display panel, the micro-light-emitting diode must first be grown on the original substrate (such as a sapphire-based substrate) by molecular beam epitaxy to form a display panel, and the micro-light-emitting diode device must also be
  • the original substrate is transferred to a receiving substrate for forming a display panel, and is arranged as a display array.
  • a micro light emitting diode is formed on the original substrate, and then micro light emitting is performed by a laser lift-off (LLO) method or the like.
  • LLO laser lift-off
  • the diode is peeled off from the original substrate, and a micro-light emitting diode is adsorbed from the original substrate to a predetermined position on the receiving substrate by using a transfer head made of a material such as polydimethylsiloxane (PDMS). .
  • PDMS polydimethylsiloxane
  • the top electrode determines whether the bonding of the micro-light-emitting diode and the receiving substrate is normal, but since the process has been basically completed, even in this case, micro-lighting is found.
  • the bonding between the diode and the receiving substrate is also difficult to repair. Therefore, it is necessary to provide a new micro LED display panel and a manufacturing method thereof, which can directly detect the working condition of the micro LED after the transfer, and reduce the product detection. And the difficulty of repair, improve product yield.
  • An object of the present invention is to provide a micro light emitting diode display panel, which can reduce the difficulty of product detection and repair, and improve product yield.
  • Another object of the present invention is to provide a method for manufacturing a micro light emitting diode display panel, which can reduce the difficulty of product detection and repair and improve product yield.
  • the present invention provides a micro-light-emitting diode display panel comprising: a substrate substrate, a plurality of array sub-pixel regions disposed on the substrate substrate, and each of the sub-pixel regions a first electrode contact and a second electrode contact arranged at intervals, and a micro light-emitting diode disposed on the first electrode contact and the second electrode contact in each sub-pixel region;
  • the micro light emitting diode includes: a bottom electrode in contact with the first electrode contact, a cathode electrode disposed above the bottom electrode and contacting the bottom electrode, disposed above the LED semiconductor layer, and a top electrode contacting the LED semiconductor layer, an insulating protective layer surrounding the LED semiconductor layer, and a connection electrode provided on the insulating protective layer connecting the top electrode and the second electrode contact.
  • the method further includes: a TFT layer disposed between the base substrate and the first electrode contact and the second electrode contact;
  • the TFT layer includes: an active layer disposed on the base substrate, a gate insulating layer covering the active layer and the base substrate, and a gate insulating layer disposed above the active layer a gate electrode, an interlayer insulating layer covering the gate electrode and the gate insulating layer, a source and a drain connected to both ends of the active layer, and a cover provided on the interlayer insulating layer a passivation layer of the source, the drain, and the interlayer insulating layer; the second electrode contact is in contact with the source.
  • a pixel defining layer disposed on the passivation layer and located around the micro light emitting diode, and a protective layer covering the passivation layer, the first electrode contact, the second electrode contact, the micro light emitting diode, and the pixel defining layer .
  • the invention also provides a method for manufacturing a micro light emitting diode display panel, comprising the following steps:
  • Step 1 providing an original substrate, forming a plurality of semi-finished products of spaced-apart micro-light emitting diodes on the original substrate;
  • the semi-finished product of each micro light emitting diode comprises: an LED semiconductor layer disposed on the original substrate, a first insulating layer covering the LED semiconductor layer and the original substrate, disposed on the first insulating layer and a bottom electrode contacting the LED semiconductor layer, and a connection electrode disposed on the first insulating layer and in contact with the original substrate;
  • Step 2 providing a transfer substrate, bonding the surface of the transfer substrate to the bottom electrode of the semi-finished product of each micro light-emitting diode and the connection electrode, and peeling off the original substrate, so that all the semi-finished products of the micro light-emitting diode are transferred to the transfer substrate. Exposing the LED semiconductor layer and the original a side surface on which the substrate is in contact;
  • Step 3 sequentially forming a second insulating layer and a top electrode disposed on the second insulating layer on the exposed LED semiconductor layer and the first insulating layer to obtain a plurality of spaced-apart micro-light emitting diodes; the top electrode Contacting the LED semiconductor layer and the connection electrode;
  • Step 4 providing a transfer head and a receiving substrate, the receiving substrate comprising: a substrate substrate, a plurality of sub-pixel regions arranged on the substrate substrate, and disposed in each sub-pixel region First and second electrode contacts arranged at intervals;
  • Step 5 transferring the micro light-emitting diode on the transfer substrate to the receiving substrate through the transfer head, each sub-pixel region corresponding to one micro light-emitting diode, and the bottom electrode and the connection electrode of the micro light-emitting diode in each sub-pixel region Separating with the first electrode contact and the second electrode contact in the sub-pixel region;
  • Step 6 providing a test voltage to the first electrode contact and the second electrode contact, and testing whether each micro light-emitting diode on the receiving substrate can be normally lit, if all the micro light-emitting diodes on the receiving substrate can be normally If the light is on, the protective layer is continuously formed on the micro light emitting diode, the first electrode contact, and the second electrode contact; if the micro light emitting diode on the receiving substrate cannot be normally lit, the light is not normally illuminated. The micro light emitting diode is replaced with a new micro light emitting diode and retested until all of the micro light emitting diodes on the receiving substrate are properly illuminated.
  • the step 1 specifically includes:
  • Step 11 providing an original substrate, forming an LED semiconductor film on the original substrate, forming a patterned first photoresist layer on the LED semiconductor film;
  • Step 12 etch the LED semiconductor film by using the first photoresist layer as an occlusion to form a plurality of spaced-apart LED semiconductor layers;
  • Step 13 covering the LED semiconductor layer and the original substrate with a first insulating layer, and forming a patterned second photoresist layer on the first insulating layer;
  • Step 14 etch the first insulating layer by using the second photoresist layer as an occlusion to form a first through hole and a second through hole penetrating the first insulating layer, the first through hole and the first through hole
  • the two via holes respectively expose a portion of the LED semiconductor layer and a portion of the original substrate
  • Step 15 Form a first metal thin film on the first insulating layer, the LED semiconductor layer, and the original substrate, and form a patterned third photoresist layer on the first metal thin film;
  • Step 16 The third metal film is etched by using the third photoresist layer to form a bottom electrode and a connection electrode.
  • the bottom electrode is in contact with the LED semiconductor layer through the first via hole, and the connection electrode passes through
  • the second via is in contact with the original substrate.
  • the transfer substrate in the step 2 is a rigid substrate provided with an adhesive layer on the surface.
  • the step 3 specifically includes:
  • Step 31 forming a second insulating layer on the LED semiconductor layer and the first insulating layer, and forming a patterned fourth photoresist layer on the second insulating layer;
  • Step 32 etch the second insulating layer by using the fourth photoresist layer as an occlusion to form a third via hole and a fourth via hole penetrating the second insulating layer, the third via hole And a fourth via hole exposing a portion of the LED semiconductor layer and a portion of the connection electrode;
  • Step 33 depositing and patterning a conductive film on the second insulating layer to form a top electrode, wherein the top electrode is in contact with the LED semiconductor layer and the connection electrode through the third via hole and the fourth via hole, respectively.
  • the receiving substrate provided in the step 4 further includes: a TFT layer and a pixel defining layer;
  • the TFT layer is disposed between the substrate substrate and the first electrode contact and the second electrode contact, and includes: an active layer disposed on the base substrate, covering the active layer, and the a gate insulating layer of the base substrate, a gate electrode on the gate insulating layer above the active layer, an interlayer insulating layer covering the gate electrode and the gate insulating layer, and the interlayer insulating layer a source and a drain on the layer in contact with both ends of the active layer, and a passivation layer covering the source, the drain, and the interlayer insulating layer; the second electrode contact and the source a pole contact; the pixel definition layer is disposed on the passivation layer and located around the micro light emitting diode.
  • At least two bonding positions are pre-set on the first electrode contact and the second electrode contact, and in the step 6 when the micro light emitting diode that cannot be normally lit is replaced with a new micro light emitting diode, the replaced The micro light emitting diode is located at a different bonding position from the micro light emitting diode before replacement.
  • the original substrate is peeled off by a laser lift-off process.
  • the invention also provides a method for manufacturing a micro light emitting diode display panel, comprising the following steps:
  • Step 1 providing an original substrate, forming a plurality of semi-finished products of spaced-apart micro-light emitting diodes on the original substrate;
  • the semi-finished product of each micro light emitting diode comprises: an LED semiconductor layer disposed on the original substrate, a first insulating layer covering the LED semiconductor layer and the original substrate, disposed on the first insulating layer and a bottom electrode contacting the LED semiconductor layer, and a connection electrode disposed on the first insulating layer and in contact with the original substrate;
  • Step 2 providing a transfer substrate, bonding the surface of the transfer substrate to the bottom electrode of the semi-finished product of each micro light-emitting diode and the connection electrode, and peeling off the original substrate, so that all the semi-finished products of the micro light-emitting diode are transferred to the transfer substrate. Exposing a side surface of the LED semiconductor layer in contact with the original substrate;
  • Step 3 sequentially forming a second insulating layer and a top electrode disposed on the second insulating layer on the exposed LED semiconductor layer and the first insulating layer to obtain a plurality of spaced-apart micro-light emitting diodes; the top electrode Contacting the LED semiconductor layer and the connection electrode;
  • Step 4 providing a transfer head and a receiving substrate, the receiving substrate comprising: a substrate substrate, a plurality of sub-pixel regions arranged on the substrate substrate, and disposed in each sub-pixel region First and second electrode contacts arranged at intervals;
  • Step 5 transferring the micro light-emitting diode on the transfer substrate to the receiving substrate through the transfer head, each sub-pixel region corresponding to one micro light-emitting diode, and the bottom electrode and the connection electrode of the micro light-emitting diode in each sub-pixel region Separating with the first electrode contact and the second electrode contact in the sub-pixel region;
  • Step 6 providing a test voltage to the first electrode contact and the second electrode contact, and testing whether each micro light-emitting diode on the receiving substrate can be normally lit, if all the micro light-emitting diodes on the receiving substrate can be normally If the light is on, the protective layer is continuously formed on the micro light emitting diode, the first electrode contact, and the second electrode contact; if the micro light emitting diode on the receiving substrate cannot be normally lit, the light is not normally illuminated. The micro light emitting diode is replaced with a new micro light emitting diode and retested until all the micro light emitting diodes on the receiving substrate are normally illuminated;
  • step 1 specifically includes:
  • Step 11 providing an original substrate, forming an LED semiconductor film on the original substrate, forming a patterned first photoresist layer on the LED semiconductor film;
  • Step 12 etch the LED semiconductor film by using the first photoresist layer as an occlusion to form a plurality of spaced-apart LED semiconductor layers;
  • Step 13 covering the LED semiconductor layer and the original substrate with a first insulating layer, and forming a patterned second photoresist layer on the first insulating layer;
  • Step 14 etch the first insulating layer by using the second photoresist layer as an occlusion to form a first through hole and a second through hole penetrating the first insulating layer, the first through hole and the first through hole
  • the two via holes respectively expose a portion of the LED semiconductor layer and a portion of the original substrate
  • Step 15 Form a first metal thin film on the first insulating layer, the LED semiconductor layer, and the original substrate, and form a patterned third photoresist layer on the first metal thin film;
  • Step 16 The third metal film is etched by using the third photoresist layer to form a bottom electrode and a connection electrode.
  • the bottom electrode is in contact with the LED semiconductor layer through the first via hole, and the connection electrode passes through The second through hole is in contact with the original substrate;
  • the transport substrate in the step 2 is a rigid substrate provided with an adhesive layer on the surface.
  • the present invention provides a micro light emitting diode display panel having a first electrode contact and a second electrode contact arranged at intervals on a substrate of the display panel, the first electrode contact and The second electrode contacts are respectively in contact with the bottom electrode and the connection electrode of the micro light emitting diode, and the connection electrode is also in contact with the top electrode of the micro light emitting diode, and the micro light emitting diode can be directly detected after the micro light emitting diode is transferred, thereby reducing the product. Difficulties in detection and repair, enhance products Yield.
  • the invention also provides a manufacturing method of the micro light emitting diode display panel, which can directly detect the micro light emitting diode after the micro light emitting diode is transferred, reduce the difficulty of product detection and repair, and improve the product yield.
  • FIG. 8 are schematic diagrams showing the first step of the method for fabricating the micro LED display panel of the present invention.
  • step 9 is a schematic diagram of step 2 of a method for fabricating a micro light emitting diode display panel according to the present invention.
  • FIG. 12 are schematic diagrams showing the third step of the method for fabricating the micro LED display panel of the present invention.
  • FIG. 13 and FIG. 14 are schematic diagrams showing steps 4 and 5 of the method for fabricating the micro LED display panel of the present invention.
  • 15 is a schematic diagram of a step 6 of a method for fabricating a micro LED display panel of the present invention. and a schematic structural view of the micro LED display panel of the present invention;
  • 16 is a top plan view showing the step 6 of the method for fabricating the micro LED display panel of the present invention.
  • 17 is a flow chart of a method of fabricating a micro luminescent diode display panel of the present invention.
  • the present invention provides a micro light emitting diode display panel, including: a substrate substrate 41 , a plurality of arrays of sub-pixel regions 15 disposed on the substrate substrate 41 , and a sub-pixel region disposed on each of the sub-pixels
  • the first electrode contact 43 and the second electrode contact 44 arranged in the region 15 and the micro LEDs on the first electrode contact 43 and the second electrode contact 44 provided in each of the sub-pixel regions 15 200;
  • the micro-light emitting diode 200 includes a bottom electrode 6 that is in contact with the first electrode contact 43 , and is disposed above the bottom electrode 6 and is in contact with the bottom electrode 6 .
  • the LED semiconductor layer 2 is disposed on the LED semiconductor.
  • the top electrode 13 and the second electrode contact 44 are connected to the electrode 7.
  • the micro light emitting diode display panel further includes: a TFT layer 42 disposed between the base substrate 41 and the first electrode contact 43 and the second electrode contact 44; the TFT layer 42 includes: An active layer 421 on the base substrate 41, a gate insulating layer 422 covering the active layer 421 and the base substrate 41, and a gate insulating layer 422 disposed above the active layer 421.
  • the second electrode contact 44 is in contact with the source 425.
  • the micro light emitting diode display panel further includes a pixel defining layer 45 disposed on the passivation layer 427 and located around the micro light emitting diode 200, and covering the passivation layer 427, the first electrode contact 43, and the first The two electrode contacts 44, the micro light emitting diode 200 and the protective layer 16 of the pixel defining layer 45.
  • the protective layer 16 has a function of enhancing light extraction of the micro-light emitting diode 200, and the protective layer 16 has good heat transfer capability.
  • the LED semiconductor layer 2 includes an N+ layer, a P+ layer, and a multiple quantum well layer in contact with the N+ layer and the P+ layer.
  • the material of the bottom electrode 6 and the connection electrode 7 may be one of metals such as nickel (Ni), molybdenum (Mo), aluminum (Al), gold (Au), platinum (Pt), and titanium (Ti) or A variety of combinations.
  • the top electrode 13 is a transparent electrode, and the material is indium tin oxide (ITO), indium zinc oxide (IZO), or a mixture of polyethylene dioxythiophene and polystyrene sulfonic acid (PEDOT: PSS), and the insulation protection
  • the material of the layer 14 is silicon oxide (SiOx), silicon nitride (SiNx), or aluminum oxide (Al 2 O 3 ).
  • the micro light emitting diode display panel of the present invention is connected to the top electrode 13 and the second electrode contact 44 through the connection electrode 7, and the top electrode 13 can be directly formed before the micro light emitting diode 200 is transferred, and the micro light emitting diode 200 is rotated. After the printing, the lighting test of the micro-light-emitting diode 200 can be directly performed, and after the micro-light-emitting diode 200 determines the normal light emission, the other structures such as the protective layer 16 can be continuously formed, which can reduce the difficulty of product detection and repair, and improve the product yield.
  • the present invention further provides a method for fabricating a micro light emitting diode display panel, comprising the following steps:
  • Step 1 providing a raw substrate 1, forming a plurality of semi-finished products 100 of spaced-apart micro-light emitting diodes on the original substrate 1;
  • the semi-finished product 100 of each of the micro-light-emitting diodes includes: an LED semiconductor layer 2 disposed on the original substrate 1, a first insulating layer 3 covering the LED semiconductor layer 2 and the original substrate 1, and a first insulating layer disposed on the first insulating layer a bottom electrode 6 on the layer 3 and in contact with the LED semiconductor layer 2, and A connection electrode 7 provided on the first insulating layer 3 and in contact with the original substrate 1.
  • the step 1 specifically includes:
  • Step 11 please refer to FIG. 1, providing an original substrate 1, forming an LED semiconductor film 2' on the original substrate 1, forming a patterned first photoresist layer 10 on the LED semiconductor film 2';
  • Step 12 referring to FIG. 2, the LED film 2' is etched by the first photoresist layer 10 to form a plurality of spaced-apart LED semiconductor layers 2;
  • Step 13 please refer to FIG. 3 and FIG. 4, covering the LED semiconductor layer 2 and the original substrate 1 with a first insulating layer 3, and forming a patterned second photoresist layer 20 on the first insulating layer 3;
  • Step 14 referring to FIG. 5 , the first insulating layer 3 is etched by using the second photoresist layer 20 as an occlusion to form a first through hole 4 and a second through hole penetrating the first insulating layer 3 . 5, the first through hole 4 and the second through hole 5 respectively expose a portion of the LED semiconductor layer 2 and a portion of the original substrate 1;
  • Step 15 a first metal thin film 6' is formed on the first insulating layer 3, the LED semiconductor layer 2, and the original substrate 1, and a pattern is formed on the first metal thin film 6'.
  • Step 16 referring to FIG. 8, the first metal film 6' is etched by using the third photoresist layer 30 as an occlusion to form a bottom electrode 6 and a connection electrode 7, and the bottom electrode 6 passes through the first via hole. 4 is in contact with the LED semiconductor layer 2, and the connection electrode 7 is in contact with the original substrate 1 through the second via hole 5.
  • the original substrate 1 is a sapphire substrate (Al 2 O 3 ), a silicon substrate (Si), a silicon carbide substrate (SiC), or a gallium nitride substrate (GaN), etc.
  • the LED semiconductor layer 2 includes: N+ A layer, a P+ layer, and a multi-quantum well layer in contact with the N+ layer and the P+ layer.
  • the material of the bottom electrode 6 and the connection electrode 7 may be a combination of one or more of metals such as nickel, molybdenum, aluminum, gold, platinum, and titanium.
  • the material of the first insulating layer 3 is silicon oxide, silicon nitride, or aluminum oxide or the like.
  • Step 2 referring to FIG. 9, a transfer substrate 8 is provided, and the surface of the transfer substrate 8 is bonded to the bottom electrode 6 and the connection electrode 7 of the semi-finished product 100 of each micro light-emitting diode, and the original substrate 1 is peeled off, so that all The semi-finished product 100 of the micro light-emitting diode is transferred onto the transfer substrate 8 to expose the side surface of the LED semiconductor layer 2 in contact with the original substrate 1.
  • the transfer substrate 8 in the step 2 is a rigid substrate provided with an adhesive layer on the surface, and the bottom electrode 6 and the connection electrode 7 are bonded by an adhesive layer on the surface of the hard substrate, so that the The semi-finished product 100 of the micro light-emitting diode is bonded to the transfer substrate 8, and the original substrate 1 is removed by a laser lift-off process, so that the semi-finished product 100 of the micro-light-emitting diode is transferred to the transfer substrate 8, and the side surface of the LED semiconductor layer 2 in contact with the original substrate 1 is Exposed.
  • the step 2 further includes inverting the transport substrate 8 and the semi-finished product 100 of the micro light-emitting diode thereon so that the exposed side of the LED semiconductor layer 2 faces upward to facilitate the subsequent process.
  • Step 3 sequentially forming a second insulating layer 9 and a top electrode 13 disposed on the second insulating layer 9 on the exposed LED semiconductor layer 2 and the first insulating layer 3, thereby obtaining a plurality of spaced-apart micro-light emitting diodes 200; the top electrode 13 is in contact with the LED semiconductor layer 2 and the connection electrode 7.
  • the first insulating layer 3 and the second insulating layer 9 together constitute an insulating protective layer 14 surrounding the LED semiconductor layer 2.
  • the step 3 includes: Step 31, referring to FIG. 10, forming a second insulating layer 9 on the LED semiconductor layer 2 and the first insulating layer 3, and forming a pattern on the second insulating layer 9.
  • Step 32 referring to FIG. 11 , the second photoresist layer 9 is etched by the fourth photoresist layer 40 to form a third via hole 11 and a fourth through the second insulating layer 9 . a through hole 12, the third through hole 11 and the fourth through hole 12 respectively exposing a portion of the LED semiconductor layer 2 and a portion of the connection electrode 7;
  • Step 33 referring to FIG. 12, depositing and patterning a conductive film on the second insulating layer 9, forming a top electrode 13, and the top electrode 13 passes through the third through hole 11 and the fourth through hole 12, respectively.
  • the LED semiconductor layer 2 and the connection electrode 7 are in contact.
  • the material of the second insulating layer 9 is silicon oxide, silicon nitride, or aluminum oxide, etc.
  • the top electrode 13 is a transparent electrode, and the material is ITO, IZO, or PEDOT:PSS.
  • the receiving substrate 400 includes a substrate substrate 41 and a plurality of arrays arranged on the substrate substrate 41.
  • the sub-pixel region 15 and the first electrode contact 43 and the second electrode contact 44 are arranged at intervals in each of the sub-pixel regions 15.
  • the receiving substrate 400 provided in the step 4 further includes: a TFT layer 42 and a pixel defining layer 45; the TFT layer 42 is disposed on the base substrate 41 and the first electrode contact 43 and the second electrode contact Between the points 44, the active layer 421 disposed on the base substrate 41, the gate insulating layer 422 covering the active layer 421 and the base substrate 41, and the active layer are disposed.
  • the pixel defining layer 45 is disposed on the passivation layer 427 and located around the micro light emitting diode 200.
  • Step 5 referring to FIG. 14, the micro light emitting diode 200 on the transfer substrate 8 is transferred onto the receiving substrate 400 by the transfer head 300, and each sub-pixel region 15 corresponds to one micro light emitting diode 200, and each sub-pixel region
  • the bottom electrode 6 and the connection electrode 7 of the micro-light-emitting diode 200 in 15 are respectively Bonded with the first electrode contact 43 and the second electrode contact 44 in the sub-pixel region 15.
  • Step 6 referring to FIG. 15 and FIG. 16, providing a test voltage to the first electrode contact 43 and the second electrode contact 44 to test whether each of the micro light-emitting diodes 200 on the receiving substrate 400 can be normally lit. All of the micro light emitting diodes 200 on the receiving substrate 400 can be normally lit, and then on the micro light emitting diode 200, the passivation layer 427, the pixel defining layer 45, the first electrode contact 43, and the second electrode contact 44.
  • the protective layer 16 if the micro-light-emitting diode 200 on the receiving substrate 400 cannot be normally lit, replace the micro-light emitting diode 200 that cannot be normally lit with the new micro-light emitting diode 200, and retest until the receiving substrate 400 All of the micro light-emitting diodes 200 can be normally lit.
  • the protective layer 16 has a function of enhancing light extraction of the micro-light emitting diode 200, and the protective layer 16 has good heat transfer capability.
  • At least two bonding positions 500 are pre-set on the first electrode contact 43 and the second electrode contact 44, and the micro-light emitting diode 200 that is not normally illuminated in the step 6 is further provided.
  • the replaced micro-light emitting diode 200 is located at a different bonding position 500 than the micro-light emitting diode 200 before replacement.
  • the micro-light-emitting diode display panel of the present invention firstly produces a semi-finished product 100 of a micro-light-emitting diode including a bottom electrode 6, an LED semiconductor layer 2, and a connection electrode 7 on the original substrate 1, and then the micro-light-emitting diode.
  • the semi-finished product 100 is transferred onto the transfer substrate 8 and inverted upside down, and then the top electrode 13 connected to both the LED semiconductor layer 2 and the connection electrode 7 is formed to obtain the finished micro-light-emitting diode 200, and finally the micro-light-emitting diode 200 is transferred to the reception.
  • the bottom electrode 6 and the connection electrode 7 are brought into contact with the first electrode contact 43 and the second electrode contact 44, respectively, so that the micro-light-emitting diode 200 can be directly processed without any process after the transfer.
  • the lighting test of the LED 200 can continue to make other structures such as the protective layer 16 after the micro-light emitting diode 200 determines normal illumination, which can reduce the difficulty of product detection and repair, and improve product yield.
  • the present invention provides a micro-light-emitting diode display panel having a first electrode contact and a second electrode contact arranged on a substrate, the first electrode contact and the first electrode
  • the two electrode contacts are respectively in contact with the bottom electrode and the connection electrode of the micro light emitting diode, and the connection electrode is also in contact with the top electrode of the micro light emitting diode, and the micro light emitting diode can be directly detected after the micro light emitting diode is transferred, thereby reducing product detection.
  • the difficulty of repair improve product yield.
  • the invention also provides a manufacturing method of the micro light emitting diode display panel, which can directly detect the micro light emitting diode after the micro light emitting diode is transferred, reduce the difficulty of product detection and repair, and improve the product yield.

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Abstract

提供了一种微发光二极管显示面板及其制作方法。该微发光二极管显示面板的衬底基板（41）上设有间隔排列的第一电极触点（43）和第二电极触点（44），第一电极触点（43）和第二电极触点（44）分别与微发光二极管的底电极（6）和连接电极（7）接触，连接电极（7）还与微发光二极管的顶电极（13）接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。

Description

微发光二极管显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种微发光二极管显示面板及其制作方法。
背景技术
平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
微发光二极管(Micro LED)显示器是一种以在一个基板上集成的高密度微小尺寸的LED阵列作为显示像素来实现图像显示的显示器，同大尺寸的户外LED显示屏一样，每一个像素可定址、单独驱动点亮，可以看成是户外LED显示屏的缩小版，将像素点距离从毫米级降低至微米级，Micro LED显示器和有机发光二极管(Organic Light-Emitting Diode，OLED)显示器一样属于自发光显示器，但Micro LED显示器相比OLED显示器还具有材料稳定性更好、寿命更长、无影像烙印等优点，被认为是OLED显示器的最大竞争对手。
在微发光二极管显示面板的制作过程中，微发光二极管必须先在原始基板(如蓝宝石类基板)上通过分子束外延的方法生长出来，而做成显示面板，还必须要把微发光二极管器件从原始基板上转移到用于形成显示面板的接收基板上排成显示阵列，具体为：先在原始基板上形成微发光二极管，随后通过激光剥离技术(Laser lift-off，LLO)等方法将微发光二极管从原始基板上剥离开，并使用一个采用诸如聚二甲基硅氧烷(Polydimethylsiloxane，PDMS)等材料制作的转印头，将微发光二极管从原始基板上吸附到接收基板上预设的位置。
目前，微发光二极管转印到接收基板上后，还需要形成顶部电极后才能判断微发光二极管与接收基板的邦定是否正常，但由于此时制程已经基本完成，这种情况下即便发现微发光二极管与接收基板的邦定不良，也已很难修复，因此需要提供一种新的微发光二极管显示面板及其制作方法，能够在转印之后直接进行微发光二极管的工作状况检测，降低产品检测及修复的难度，提升产品良率。
发明内容
本发明的目的在于提供一种微发光二极管显示面板，能够降低产品检测及修复的难度，提升产品良率。
本发明的目的还在于提供一种微发光二极管显示面板的制作方法，能够降低产品检测及修复的难度，提升产品良率。
为实现上述目的，本发明提供了一种微发光二极管显示面板，包括：衬底基板、设于所述衬底基板上的多个阵列排布的子像素区域、设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点、以及设于每一个子像素区域内的第一电极触点和第二电极触点上的微发光二极管；
所述微发光二极管包括：与所述第一电极触点接触的底电极、设于所述底电极上方并与所述底电极接触LED半导体层、设于所述LED半导体层上方并与所述LED半导体层接触的顶电极、包围所述LED半导体层的绝缘保护层、以及设于所述绝缘保护层上的连接所述顶电极和第二电极触点的连接电极。
还包括：设于所述衬底基板与第一电极触点和第二电极触点之间的TFT层；
所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触。
还包括设于钝化层上且位于微发光二极管的四周的像素定义层、以及覆盖所述钝化层、第一电极触点、第二电极触点、微发光二极管及像素定义层的保护层。
本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：
步骤1、提供一原始基板，在所述原始基板上形成多个间隔排列的微发光二极管的半成品；
每一个微发光二极管的半成品均包括：设于所述原始基板上的LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、设于所述第一绝缘层上并与所述LED半导体层接触的底电极、以及设于所述第一绝缘层上并与原始基板接触的连接电极；
步骤2、提供一转运基板，将所述转运基板表面与各个微发光二极管的半成品的底电极以及连接电极粘合，剥离所述原始基板，使得所有的微发光二极管的半成品均转移到转运基板上，暴露出所述LED半导体层与原始 基板接触的一侧表面；
步骤3、在所述暴露出的LED半导体层以及第一绝缘层上依次形成第二绝缘层和设于第二绝缘层上的顶电极，得到多个间隔排列的微发光二极管；所述顶电极与所述LED半导体层和连接电极接触；
步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上多个阵列排布的子像素区域、以及设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点；
步骤5、通过所述转印头将转运基板上的微发光二极管转印到接收基板上，每一个子像素区域对应一个微发光二极管，各个子像素区域内的微发光二极管的底电极和连接电极分别与该子像素区域内的第一电极触点和第二电极触点邦定；
步骤6、向所述第一电极触点和第二电极触点提供测试电压，测试接收基板上的各个微发光二极管是否能够正常点亮，若所述接收基板上所有微发光二极管均能正常点亮，则在所述微发光二极管、第一电极触点、及第二电极触点上继续形成保护层；若所述接收基板上有微发光二极管不能正常点亮，则将不能正常点亮的微发光二极管替换为新的微发光二极管，并重新测试直至接收基板上所有微发光二极管均能正常点亮。
所述步骤1具体包括：
步骤11、提供一原始基板，在所述原始基板上形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；
步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成多个间隔排列的LED半导体层；
步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；
步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；
步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；
步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成底电极和连接电极，所述底电极通过第一通孔与LED半导体层接触，所述连接电极通过第二通孔与原始基板接触。
所述步骤2中的转运基板为表面设有粘合层的硬质基板。
所述步骤3具体包括：
步骤31、在所述LED半导体层以及第一绝缘层上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；
步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第三通孔和第四通孔，所述第三通孔和第四通孔分别暴露出所述LED半导体层的一部分和连接电极的一部分；
步骤33、在所述第二绝缘层上沉积并图案化导电薄膜，形成顶电极，所述顶电极分别通过所述第三通孔和第四通孔与所述LED半导体层以及连接电极接触。
所述步骤4中提供的接收基板还包括：TFT层和像素定义层；
所述TFT层设于所述衬底基板与第一电极触点和第二电极触点之间，包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触；所述像素定义层设于钝化层上且位于微发光二极管的四周。
所述第一电极触点和第二电极触点上预设有至少两个邦定位置，所述步骤6中将不能正常点亮的微发光二极管替换为新的微发光二极管时，替换后的微发光二极管与替换前的微发光二极管位于不同的邦定位置。
所述步骤2中通过激光剥离工艺剥离原始基板。
本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：
步骤1、提供一原始基板，在所述原始基板上形成多个间隔排列的微发光二极管的半成品；
每一个微发光二极管的半成品均包括：设于所述原始基板上的LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、设于所述第一绝缘层上并与所述LED半导体层接触的底电极、以及设于所述第一绝缘层上并与原始基板接触的连接电极；
步骤2、提供一转运基板，将所述转运基板表面与各个微发光二极管的半成品的底电极以及连接电极粘合，剥离所述原始基板，使得所有的微发光二极管的半成品均转移到转运基板上，暴露出所述LED半导体层与原始基板接触的一侧表面；
步骤3、在所述暴露出的LED半导体层以及第一绝缘层上依次形成第二绝缘层和设于第二绝缘层上的顶电极，得到多个间隔排列的微发光二极管；所述顶电极与所述LED半导体层和连接电极接触；
步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上多个阵列排布的子像素区域、以及设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点；
步骤5、通过所述转印头将转运基板上的微发光二极管转印到接收基板上，每一个子像素区域对应一个微发光二极管，各个子像素区域内的微发光二极管的底电极和连接电极分别与该子像素区域内的第一电极触点和第二电极触点邦定；
步骤6、向所述第一电极触点和第二电极触点提供测试电压，测试接收基板上的各个微发光二极管是否能够正常点亮，若所述接收基板上所有微发光二极管均能正常点亮，则在所述微发光二极管、第一电极触点、及第二电极触点上继续形成保护层；若所述接收基板上有微发光二极管不能正常点亮，则将不能正常点亮的微发光二极管替换为新的微发光二极管，并重新测试直至接收基板上所有微发光二极管均能正常点亮；
其中，所述步骤1具体包括：
步骤11、提供一原始基板，在所述原始基板上形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；
步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成多个间隔排列的LED半导体层；
步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；
步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；
步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；
步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成底电极和连接电极，所述底电极通过第一通孔与LED半导体层接触，所述连接电极通过第二通孔与原始基板接触；
其中，所述步骤2中的转运基板为表面设有粘合层的硬质基板。
本发明的有益效果：本发明提供一种微发光二极管显示面板，该显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品 良率。本发明还提供一种微发光二极管显示面板的制作方法，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1至图8为本发明的微发光二极管显示面板的制作方法的步骤1的示意图；
图9为本发明的微发光二极管显示面板的制作方法的步骤2的示意图；
图10至图12为本发明的微发光二极管显示面板的制作方法的步骤3的示意图；
图13和图14为本发明的微发光二极管显示面板的制作方法的步骤4和步骤5的示意图；
图15为本发明的微发光二极管显示面板的制作方法的步骤6的示意图暨本发明的微发光二极管显示面板的结构示意图；
图16为本发明的微发光二极管显示面板的制作方法的步骤6的俯视示意图；
图17为本发明的微发光二极管显示面板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图15，本发明提供一种微发光二极管显示面板，包括：衬底基板41、设于所述衬底基板41上的多个阵列排布的子像素区域15、设于每一个子像素区域15内的间隔排列的第一电极触点43和第二电极触点44、以及设于每一个子像素区域15内的第一电极触点43和第二电极触点44上的微发光二极管200；
所述微发光二极管200包括：与所述第一电极触点43接触的底电极6、设于所述底电极6上方并与所述底电极6接触LED半导体层2、设于所述LED半导体层2上方并与所述LED半导体层2接触的顶电极13、包围所述LED半导体层2的绝缘保护层14、以及设于所述绝缘保护层14上的连接 所述顶电极13和第二电极触点44的连接电极7。
具体地，所述微发光二极管显示面板还包括：设于所述衬底基板41与第一电极触点43和第二电极触点44之间的TFT层42；所述TFT层42包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426、以及覆盖所述源极425、漏极426和层间绝缘层424的钝化层427；所述第二电极触点44与所述源极425接触。
具体地，所述微发光二极管显示面板还包括设于钝化层427上且位于微发光二极管200的四周的像素定义层45、以及覆盖所述钝化层427、第一电极触点43、第二电极触点44、微发光二极管200及像素定义层45的保护层16。
具体地，所述保护层16具有增强微发光二极管200的光提取的功能，且所述保护层16具有良好的热传导能力。
具体地，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6和连接电极7的材料可以为镍(Ni)、钼(Mo)、铝(Al)、金(Au)、铂(Pt)、及钛(Ti)等金属中的一种或多种的组合。所述顶电极13为透明电极，材料为氧化铟锡(ITO)、氧化铟锌(IZO)、或聚乙撑二氧噻吩和聚苯乙烯磺酸的混合物(PEDOT：PSS)，所述绝缘保护层14的材料为氧化硅(SiOx)、氮化硅(SiNx)、或氧化铝(Al2O3)等。
需要说明的是，本发明的微发光二极管显示面板通过连接电极7连接顶电极13和第二电极触点44，可在微发光二极管200转印前直接形成顶电极13，在微发光二极管200转印后可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。
请参阅图17，本发明还提供一种微发光二极管显示面板的制作方法，包括如下步骤：
步骤1、提供一原始基板1，在所述原始基板1上形成多个间隔排列的微发光二极管的半成品100；
每一个微发光二极管的半成品100均包括：设于所述原始基板1上的LED半导体层2、覆盖所述LED半导体层2和原始基板1的第一绝缘层3、设于所述第一绝缘层3上并与所述LED半导体层2接触的底电极6、以及 设于所述第一绝缘层3上并与原始基板1接触的连接电极7。
具体地，所述步骤1具体包括：
步骤11、请参阅图1，提供一原始基板1，在所述原始基板1上形成LED半导体薄膜2’，在所述LED半导体薄膜2’上形成图案化的第一光阻层10；
步骤12、请参阅图2，以所述第一光阻层10为遮挡，对所述LED半导体薄膜2’进行刻蚀，形成多个间隔排列的LED半导体层2；
步骤13、请参阅图3和图4，在所述LED半导体层2和原始基板1上覆盖第一绝缘层3，在所述第一绝缘层3上形成图案化的第二光阻层20；
步骤14、请参阅图5，以第二光阻层20为遮挡，对所述第一绝缘层3进行刻蚀，形成贯穿所述第一绝缘层3的第一通孔4和第二通孔5，所述第一通孔4和第二通孔5分别暴露出所述LED半导体层2的一部分以及原始基板1的一部分；
步骤15、请参阅图6和图7，在所述第一绝缘层3、LED半导体层2、及原始基板1上形成第一金属薄膜6’，在所述第一金属薄膜6’上形成图案化的第三光阻层30；
步骤16、请参阅图8，以第三光阻层30为遮挡，对所述第一金属薄膜6’进行刻蚀，形成底电极6和连接电极7，所述底电极6通过第一通孔4与LED半导体层2接触，所述连接电极7通过第二通孔5与原始基板1接触。
具体的，所述原始基板1为蓝宝石基板(Al2O3)、硅基板(Si)、碳化硅基板(SiC)、或氮化镓基板(GaN)等，所述LED半导体层2包括：N+层、P+层、以及与N+层和P+层接触的多量子井层。所述底电极6和连接电极7的材料可以为镍、钼、铝、金、铂、及钛等金属中的一种或多种的组合。所述第一绝缘层3的材料为氧化硅、氮化硅、或氧化铝等。
步骤2、请参阅图9，提供一转运基板8，将所述转运基板8表面与各个微发光二极管的半成品100的底电极6以及连接电极7粘合，剥离所述原始基板1，使得所有的微发光二极管的半成品100均转移到转运基板8上，暴露出所述LED半导体层2与原始基板1接触的一侧表面。
具体地，所述步骤2中的转运基板8为表面设有粘合层的硬质基板，通过所述硬质基板表面的粘合层粘合所述底电极6以及连接电极7，使得所述微发光二极管的半成品100与转运基板8粘合，再通过激光剥离工艺去除原始基板1，使得微发光二极管的半成品100转移到转运基板8，且LED半导体层2与原始基板1接触的一侧表面暴露出来。
具体地，所述步骤2还包括将转运基板8与其上的微发光二极管的半成品100上下倒转，以使LED半导体层2暴露出来的一侧朝上，便于后续制程的进行。
步骤3、在所述暴露出的LED半导体层2以及第一绝缘层3上依次形成第二绝缘层9和设于第二绝缘层9上的顶电极13，得到多个间隔排列的微发光二极管200；所述顶电极13与所述LED半导体层2和连接电极7接触。
具体地，所述第一绝缘层3及第二绝缘层9共同构成包围LED半导体层2的绝缘保护层14。
具体地，所述步骤3具体包括：步骤31、请参阅图10，在所述LED半导体层2以及第一绝缘层3上形成第二绝缘层9，在所述第二绝缘层9上形成图案化的第四光阻层40；
步骤32、请参阅图11，以所述第四光阻层40为遮挡，对所述第二绝缘层9进行刻蚀，形成贯穿所述第二绝缘层9的第三通孔11和第四通孔12，所述第三通孔11和第四通孔12分别暴露出所述LED半导体层2的一部分和连接电极7的一部分；
步骤33、请参阅图12，在所述第二绝缘层9上沉积并图案化导电薄膜，形成顶电极13，所述顶电极13分别通过所述第三通孔11和第四通孔12与所述LED半导体层2以及连接电极7接触。
具体地，所述第二绝缘层9的材料为氧化硅、氮化硅、或氧化铝等，所述顶电极13为透明电极，材料为ITO、IZO、或PEDOT：PSS。
步骤4、请参阅图13和图14，提供一转印头300和一接收基板400，所述接收基板400包括：衬底基板41、设于所述衬底基板41上多个阵列排布的子像素区域15、以及设于每一个子像素区域15内的间隔排列的第一电极触点43和第二电极触点44。
具体地，所述步骤4中提供的接收基板400还包括：TFT层42和像素定义层45；所述TFT层42设于所述衬底基板41与第一电极触点43和第二电极触点44之间，包括：设于所述衬底基板41上的有源层421、覆盖所述有源层421与所述衬底基板41的栅极绝缘层422、设于所述有源层421上方的栅极绝缘层422上的栅极423、覆盖所述栅极423以及栅极绝缘层422的层间绝缘层424、设于所述层间绝缘层424上的与所述有源层421的两端接触的源极425和漏极426、以及覆盖所述源极425、漏极426和层间绝缘层424的钝化层427；所述第二电极触点44与所述源极425接触；所述像素定义层45设于钝化层427上且位于微发光二极管200的四周。
步骤5、请参阅图14，通过所述转印头300将转运基板8上的微发光二极管200转印到接收基板400上，每一个子像素区域15对应一个微发光二极管200，各个子像素区域15内的微发光二极管200的底电极6和连接电极7分别与该子像素区域15内的第一电极触点43和第二电极触点44邦定(Bonding)。
步骤6、请参阅图15和图16，向所述第一电极触点43和第二电极触点44提供测试电压，测试接收基板400上的各个微发光二极管200是否能够正常点亮，若所述接收基板400上所有微发光二极管200均能正常点亮，则在所述微发光二极管200、钝化层427、像素定义层45、第一电极触点43、及第二电极触点44上继续形成保护层16；若所述接收基板400上有微发光二极管200不能正常点亮，则将不能正常点亮的微发光二极管200替换为新的微发光二极管200，并重新测试直至接收基板400上所有微发光二极管200均能正常点亮。
具体地，所述保护层16具有增强微发光二极管200的光提取的功能，且所述保护层16具有良好的热传导能力。
进一步地，请参阅图16，所述第一电极触点43和第二电极触点44上预设有至少两个邦定位置500，所述步骤6中将不能正常点亮的微发光二极管200替换为新的微发光二极管200时，替换后的微发光二极管200与替换前的微发光二极管200位于不同的邦定位置500。
需要说明的是，本发明的微发光二极管显示面板的制作方法先在原始基板1上制作包括底电极6、LED半导体层2、和连接电极7的微发光二极管的半成品100，接着将微发光二极管的半成品100转移到转运基板8上并上下倒转，然后接着形成与LED半导体层2和连接电极7均连接的顶电极13，得到成品的微发光二极管200，最后将微发光二极管200转印到接收基板400上，使得底电极6和连接电极7分别与第一电极触点43和第二电极触点44邦定接触，从而在微发光二极管200转印后无需经过任何制程，即可直接进行微发光二极管200的点亮测试，在微发光二极管200确定正常发光后再继续制作保护层16等其他结构，能够降低产品检测及修复的难度，提升产品良率。
综上所述，本发明提供一种微发光二极管显示面板，该显示面板的衬底基板上设有间隔排列的第一电极触点和第二电极触点，所述第一电极触点和第二电极触点分别与微发光二极管的底电极和连接电极接触，所述连接电极还与微发光二极管的顶电极接触，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。 本发明还提供一种微发光二极管显示面板的制作方法，能够在微发光二极管转印后直接进行微发光二极管的检测，降低产品检测及修复的难度，提升产品良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种微发光二极管显示面板，包括：衬底基板、设于所述衬底基板上的多个阵列排布的子像素区域、设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点、以及设于每一个子像素区域内的第一电极触点和第二电极触点上的微发光二极管；
    所述微发光二极管包括：与所述第一电极触点接触的底电极、设于所述底电极上方并与所述底电极接触LED半导体层、设于所述LED半导体层上方并与所述LED半导体层接触的顶电极、包围所述LED半导体层的绝缘保护层、以及设于所述绝缘保护层上的连接所述顶电极和第二电极触点的连接电极。
  2. 如权利要求1所述的微发光二极管显示面板，还包括：设于所述衬底基板与第一电极触点和第二电极触点之间的TFT层；
    所述TFT层包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触。
  3. 如权利要求2所述的微发光二极管显示面板，还包括设于钝化层上且位于微发光二极管的四周的像素定义层、以及覆盖所述钝化层、第一电极触点、第二电极触点、微发光二极管及像素定义层的保护层。
  4. 一种微发光二极管显示面板的制作方法，包括如下步骤：
    步骤1、提供一原始基板，在所述原始基板上形成多个间隔排列的微发光二极管的半成品；
    每一个微发光二极管的半成品均包括：设于所述原始基板上的LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、设于所述第一绝缘层上并与所述LED半导体层接触的底电极、以及设于所述第一绝缘层上并与原始基板接触的连接电极；
    步骤2、提供一转运基板，将所述转运基板表面与各个微发光二极管的半成品的底电极以及连接电极粘合，剥离所述原始基板，使得所有的微发光二极管的半成品均转移到转运基板上，暴露出所述LED半导体层与原始基板接触的一侧表面；
    步骤3、在所述暴露出的LED半导体层以及第一绝缘层上依次形成第 二绝缘层和设于第二绝缘层上的顶电极，得到多个间隔排列的微发光二极管；所述顶电极与所述LED半导体层和连接电极接触；
    步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上多个阵列排布的子像素区域、以及设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点；
    步骤5、通过所述转印头将转运基板上的微发光二极管转印到接收基板上，每一个子像素区域对应一个微发光二极管，各个子像素区域内的微发光二极管的底电极和连接电极分别与该子像素区域内的第一电极触点和第二电极触点邦定；
    步骤6、向所述第一电极触点和第二电极触点提供测试电压，测试接收基板上的各个微发光二极管是否能够正常点亮，若所述接收基板上所有微发光二极管均能正常点亮，则在所述微发光二极管、第一电极触点、及第二电极触点上继续形成保护层；若所述接收基板上有微发光二极管不能正常点亮，则将不能正常点亮的微发光二极管替换为新的微发光二极管，并重新测试直至接收基板上所有微发光二极管均能正常点亮。
  5. 如权利要求4所述的微发光二极管显示面板的制作方法，其中，所述步骤1具体包括：
    步骤11、提供一原始基板，在所述原始基板上形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；
    步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成多个间隔排列的LED半导体层；
    步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；
    步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；
    步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；
    步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成底电极和连接电极，所述底电极通过第一通孔与LED半导体层接触，所述连接电极通过第二通孔与原始基板接触。
  6. 如权利要求4所述的微发光二极管显示面板的制作方法，其中，所述步骤2中的转运基板为表面设有粘合层的硬质基板。
  7. 如权利要求4所述的微发光二极管显示面板的制作方法，其中，所 述步骤3具体包括：
    步骤31、在所述LED半导体层以及第一绝缘层上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；
    步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第三通孔和第四通孔，所述第三通孔和第四通孔分别暴露出所述LED半导体层的一部分和连接电极的一部分；
    步骤33、在所述第二绝缘层上沉积并图案化导电薄膜，形成顶电极，所述顶电极分别通过所述第三通孔和第四通孔与所述LED半导体层以及连接电极接触。
  8. 如权利要求4所述的微发光二极管显示面板的制作方法，其中，所述步骤4中提供的接收基板还包括：TFT层和像素定义层；
    所述TFT层设于所述衬底基板与第一电极触点和第二电极触点之间，包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触；
    所述像素定义层设于钝化层上且位于所述微发光二极管的四周。
  9. 如权利要求4所述的微发光二极管显示面板的制作方法，其中，所述第一电极触点和第二电极触点上预设有至少两个邦定位置，所述步骤6中将不能正常点亮的微发光二极管替换为新的微发光二极管时，替换后的微发光二极管与替换前的微发光二极管位于不同的邦定位置。
  10. 如权利要求4所述的微发光二极管显示面板的制作方法，其中，所述步骤2中通过激光剥离工艺剥离原始基板。
  11. 一种微发光二极管显示面板的制作方法，包括如下步骤：
    步骤1、提供一原始基板，在所述原始基板上形成多个间隔排列的微发光二极管的半成品；
    每一个微发光二极管的半成品均包括：设于所述原始基板上的LED半导体层、覆盖所述LED半导体层和原始基板的第一绝缘层、设于所述第一绝缘层上并与所述LED半导体层接触的底电极、以及设于所述第一绝缘层上并与原始基板接触的连接电极；
    步骤2、提供一转运基板，将所述转运基板表面与各个微发光二极管的半成品的底电极以及连接电极粘合，剥离所述原始基板，使得所有的微发光二极管的半成品均转移到转运基板上，暴露出所述LED半导体层与原始 基板接触的一侧表面；
    步骤3、在所述暴露出的LED半导体层以及第一绝缘层上依次形成第二绝缘层和设于第二绝缘层上的顶电极，得到多个间隔排列的微发光二极管；所述顶电极与所述LED半导体层和连接电极接触；
    步骤4、提供一转印头和一接收基板，所述接收基板包括：衬底基板、设于所述衬底基板上多个阵列排布的子像素区域、以及设于每一个子像素区域内的间隔排列的第一电极触点和第二电极触点；
    步骤5、通过所述转印头将转运基板上的微发光二极管转印到接收基板上，每一个子像素区域对应一个微发光二极管，各个子像素区域内的微发光二极管的底电极和连接电极分别与该子像素区域内的第一电极触点和第二电极触点邦定；
    步骤6、向所述第一电极触点和第二电极触点提供测试电压，测试接收基板上的各个微发光二极管是否能够正常点亮，若所述接收基板上所有微发光二极管均能正常点亮，则在所述微发光二极管、第一电极触点、及第二电极触点上继续形成保护层；若所述接收基板上有微发光二极管不能正常点亮，则将不能正常点亮的微发光二极管替换为新的微发光二极管，并重新测试直至接收基板上所有微发光二极管均能正常点亮；
    其中，所述步骤1具体包括：
    步骤11、提供一原始基板，在所述原始基板上形成LED半导体薄膜，在所述LED半导体薄膜上形成图案化的第一光阻层；
    步骤12、以所述第一光阻层为遮挡，对所述LED半导体薄膜进行刻蚀，形成多个间隔排列的LED半导体层；
    步骤13、在所述LED半导体层和原始基板上覆盖第一绝缘层，在所述第一绝缘层上形成图案化的第二光阻层；
    步骤14、以第二光阻层为遮挡，对所述第一绝缘层进行刻蚀，形成贯穿所述第一绝缘层的第一通孔和第二通孔，所述第一通孔和第二通孔分别暴露出所述LED半导体层的一部分以及原始基板的一部分；
    步骤15、在所述第一绝缘层、LED半导体层、及原始基板上形成第一金属薄膜，在所述第一金属薄膜上形成图案化的第三光阻层；
    步骤16、以第三光阻层为遮挡，对所述第一金属薄膜进行刻蚀，形成底电极和连接电极，所述底电极通过第一通孔与LED半导体层接触，所述连接电极通过第二通孔与原始基板接触；
    其中，所述步骤2中的转运基板为表面设有粘合层的硬质基板。
  12. 如权利要求11所述的微发光二极管显示面板的制作方法，其中， 所述步骤3具体包括：
    步骤31、在所述LED半导体层以及第一绝缘层上形成第二绝缘层，在所述第二绝缘层上形成图案化的第四光阻层；
    步骤32、以所述第四光阻层为遮挡，对所述第二绝缘层进行刻蚀，形成贯穿所述第二绝缘层的第三通孔和第四通孔，所述第三通孔和第四通孔分别暴露出所述LED半导体层的一部分和连接电极的一部分；
    步骤33、在所述第二绝缘层上沉积并图案化导电薄膜，形成顶电极，所述顶电极分别通过所述第三通孔和第四通孔与所述LED半导体层以及连接电极接触。
  13. 如权利要求11所述的微发光二极管显示面板的制作方法，其中，所述步骤4中提供的接收基板还包括：TFT层和像素定义层；
    所述TFT层设于所述衬底基板与第一电极触点和第二电极触点之间，包括：设于所述衬底基板上的有源层、覆盖所述有源层与所述衬底基板的栅极绝缘层、设于所述有源层上方的栅极绝缘层上的栅极、覆盖所述栅极以及栅极绝缘层的层间绝缘层、设于所述层间绝缘层上的与所述有源层的两端接触的源极和漏极、以及覆盖所述源极、漏极和层间绝缘层的钝化层；所述第二电极触点与所述源极接触；
    所述像素定义层设于钝化层上且位于所述微发光二极管的四周。
  14. 如权利要求11所述的微发光二极管显示面板的制作方法，其中，所述第一电极触点和第二电极触点上预设有至少两个邦定位置，所述步骤6中将不能正常点亮的微发光二极管替换为新的微发光二极管时，替换后的微发光二极管与替换前的微发光二极管位于不同的邦定位置。
  15. 如权利要求11所述的微发光二极管显示面板的制作方法，其中，所述步骤2中通过激光剥离工艺剥离原始基板。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220037402A (ko) * 2019-07-24 2022-03-24 보에 테크놀로지 그룹 컴퍼니 리미티드 디스플레이 기판 및 그 제조 방법

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107170773B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
CN107680960B (zh) * 2017-09-26 2019-07-16 上海天马微电子有限公司 一种显示面板及其制造方法、显示装置
CN107633777A (zh) * 2017-10-12 2018-01-26 深圳市创显光电有限公司 一种led显示装置及其制造方法
CN109786307B (zh) * 2017-11-15 2021-02-05 鸿富锦精密工业（深圳）有限公司 微型led显示面板的制备方法
US10707266B2 (en) * 2017-11-23 2020-07-07 Century Micro Display Technology (Shenzhen) Co., Ltd. Micro LED display panel with double-sides display
CN108231968B (zh) * 2017-12-11 2020-02-11 厦门市三安光电科技有限公司 微发光二极管及其转移方法
TWI679762B (zh) * 2018-03-06 2019-12-11 友達光電股份有限公司 顯示裝置及其製造方法
CN208014703U (zh) 2018-03-29 2018-10-26 昆山工研院新型平板显示技术中心有限公司 驱动背板、微发光二极管显示面板及显示器
KR20190114334A (ko) * 2018-03-29 2019-10-10 (주)포인트엔지니어링 마이크로 led 검사 및 리페어 방법
US11961871B2 (en) 2018-05-18 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and method for fabricating display device
CN110797369B (zh) * 2018-05-28 2022-08-16 鸿富锦精密工业（深圳）有限公司 微型发光二极管显示面板
CN110544661A (zh) * 2018-05-29 2019-12-06 普因特工程有限公司 微led转印头及利用其的微led转印***
CN110689818B (zh) * 2018-07-06 2021-10-08 群创光电股份有限公司 电子装置及电子装置的修复方法
TWI721308B (zh) * 2018-08-17 2021-03-11 英屬開曼群島商錼創科技股份有限公司 微型發光二極體顯示裝置
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
US10796938B2 (en) 2018-10-17 2020-10-06 X Display Company Technology Limited Micro-transfer printing with selective component removal
US10573544B1 (en) * 2018-10-17 2020-02-25 X-Celeprint Limited Micro-transfer printing with selective component removal
CN111244246B (zh) * 2018-11-29 2021-08-17 成都辰显光电有限公司 发光微元件及其转移***、显示装置
CN109616499A (zh) * 2018-12-04 2019-04-12 京东方科技集团股份有限公司 显示面板、显示装置及显示面板的制造方法
TWI683465B (zh) 2018-12-11 2020-01-21 友達光電股份有限公司 發光裝置的製造方法
KR102526352B1 (ko) * 2018-12-20 2023-04-28 엘지디스플레이 주식회사 박막 트랜지스터 및 이를 이용한 표시패널
CN109801925B (zh) 2019-01-17 2021-08-24 京东方科技集团股份有限公司 一种微led显示面板及其制备方法
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
KR20200026661A (ko) * 2019-02-20 2020-03-11 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN109904174B (zh) * 2019-02-28 2021-01-08 京东方科技集团股份有限公司 一种显示面板的电路背板及其制备方法和显示面板
CN109873007B (zh) * 2019-04-02 2021-02-26 深圳市华星光电半导体显示技术有限公司 有源矩阵微发光二极管显示面板
US20220231193A1 (en) * 2019-04-23 2022-07-21 Osram Opto Semiconductors Gmbh Led module, led display module and method of manufacturing the same
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
CN110047866B (zh) * 2019-04-30 2021-04-02 京东方科技集团股份有限公司 阵列基板、显示面板及微型led的转移方法
KR20200129340A (ko) * 2019-05-08 2020-11-18 삼성전자주식회사 전사 장치 및 이를 이용한 마이크로 led 디스플레이의 제조 방법
CN110190068B (zh) * 2019-05-21 2020-12-08 深圳市华星光电半导体显示技术有限公司 显示面板和显示面板的制造方法
CN112018143A (zh) * 2019-05-28 2020-12-01 云谷（固安）科技有限公司 微发光二极管显示基板、显示面板及其制作方法、显示装置
CN112054105A (zh) * 2019-06-06 2020-12-08 錼创显示科技股份有限公司 微型发光二极管显示器的制造方法
CN110189628B (zh) * 2019-06-28 2023-01-10 京东方科技集团股份有限公司 一种背光模组及显示装置
KR102642331B1 (ko) * 2019-07-03 2024-03-04 삼성전자주식회사 마이크로 led 디스플레이 모듈 및 이를 제조하는 방법
KR20210004324A (ko) * 2019-07-04 2021-01-13 삼성전자주식회사 마이크로 led 디스플레이 모듈 및 이를 제조하는 방법
CN110349989B (zh) * 2019-07-17 2022-05-03 京东方科技集团股份有限公司 发光二极管、显示基板和转移方法
CN110459475A (zh) * 2019-07-23 2019-11-15 南京中电熊猫平板显示科技有限公司 一种薄膜晶体管及其制造方法
CN112649711B (zh) * 2019-10-12 2022-04-15 成都辰显光电有限公司 微发光二极管的检测装置及方法
CN110739377B (zh) * 2019-10-28 2023-07-25 錼创显示科技股份有限公司 微型发光二极管装置
CN110911436B (zh) * 2019-12-03 2022-05-31 京东方科技集团股份有限公司 一种驱动背板、发光二极管的转移装置及转移方法
CN111128942B (zh) * 2019-12-04 2021-07-23 深圳市华星光电半导体显示技术有限公司 一种微发光二极管显示基板及其制备方法
KR20210078627A (ko) * 2019-12-18 2021-06-29 삼성디스플레이 주식회사 표시장치 및 이의 제조방법
CN111081160B (zh) 2019-12-31 2022-01-04 上海天马微电子有限公司 显示面板、显示装置及显示面板的制作方法
US11699690B2 (en) * 2020-02-19 2023-07-11 Innolux Corporation Display device and manufacturing method thereof
CN113284428A (zh) * 2020-02-19 2021-08-20 群创光电股份有限公司 显示装置
WO2021168615A1 (zh) * 2020-02-24 2021-09-02 重庆康佳光电技术研究院有限公司 发光二极管的巨量转移方法、以及显示背板组件
US20210320234A1 (en) * 2020-04-09 2021-10-14 Raysolve Optoelectronics (Suzhou) Company Limited Light emitting diode structure and method for manufacturing the same
CN111463230A (zh) * 2020-04-13 2020-07-28 深圳市华星光电半导体显示技术有限公司 Micro LED阵列基板的修补装置以及micro LED阵列基板的修补方法
CN111211213B (zh) * 2020-04-21 2020-09-04 南京中电熊猫平板显示科技有限公司 一种显示背板及其制造方法
KR20230029780A (ko) * 2020-06-15 2023-03-03 엘지전자 주식회사 반도체 발광소자 패키지 및 이를 포함하는 디스플레이 장치
EP4162531A4 (en) * 2020-06-28 2023-08-09 Huawei Technologies Co., Ltd. DEVICE AND ITS MANUFACTURING METHOD
US11915985B2 (en) * 2020-11-11 2024-02-27 Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. Detection structure and detection method
CN112447787B (zh) * 2020-11-30 2024-05-31 厦门乾照半导体科技有限公司 可拾取及测试的微器件及制作、测试、转移方法及显示器
CN112599552B (zh) * 2020-12-14 2024-02-20 苏州芯聚半导体有限公司 微发光二极管显示面板及制备方法
KR20220115674A (ko) * 2021-02-09 2022-08-18 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20220128534A (ko) * 2021-03-11 2022-09-21 삼성디스플레이 주식회사 표시 장치
CN113078249A (zh) * 2021-03-31 2021-07-06 錼创显示科技股份有限公司 微型发光元件结构及显示装置
US20240186473A1 (en) * 2021-03-31 2024-06-06 Lg Display Co., Ltd. Display device comprising semiconductor light emitting element
TWI765631B (zh) * 2021-03-31 2022-05-21 錼創顯示科技股份有限公司 微型發光元件結構及顯示裝置
CN113764326B (zh) * 2021-09-09 2024-01-19 湖北长江新型显示产业创新中心有限公司 微发光二极管及其转移装置和转移方法
CN113990996A (zh) * 2021-10-26 2022-01-28 錼创显示科技股份有限公司 微型发光二极管显示设备
TWI802059B (zh) * 2021-10-26 2023-05-11 錼創顯示科技股份有限公司 微型發光二極體顯示裝置
JP7502658B2 (ja) 2021-12-10 2024-06-19 日亜化学工業株式会社 発光素子の製造方法
CN114335063A (zh) * 2021-12-30 2022-04-12 厦门天马微电子有限公司 一种显示面板、装置及微发光二极管的转移装置、方法
WO2023142151A1 (en) * 2022-01-31 2023-08-03 Jade Bird Display (Shanghai) Company Micro led structure and micro display panel
WO2023163433A1 (ko) * 2022-02-24 2023-08-31 삼성전자주식회사 디스플레이 모듈의 리페어 방법
CN114725082A (zh) * 2022-03-29 2022-07-08 厦门天马微电子有限公司 一种显示面板、显示装置及发光二极管的转移装置
CN116705639A (zh) * 2023-06-27 2023-09-05 惠科股份有限公司 微发光二极管组件及其检测方法、微显示基板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103390613A (zh) * 2013-08-14 2013-11-13 中国科学院长春光学精密机械与物理研究所 高发光均匀性的密排列led面阵器件及制备方法
US20140027709A1 (en) * 2012-07-30 2014-01-30 John A. Higginson Method and structure for receiving a micro device
CN104350613A (zh) * 2012-04-27 2015-02-11 勒克斯维科技公司 形成具有自对准金属化堆栈的微型led器件的方法
CN105826435A (zh) * 2016-04-28 2016-08-03 歌尔声学股份有限公司 红光微发光二极管的形成方法、制造方法、背板及电子设备
CN106229326A (zh) * 2016-07-22 2016-12-14 深圳市华星光电技术有限公司 在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6194775A (ja) * 1984-10-17 1986-05-13 Oki Electric Ind Co Ltd Ｌｅｄプリンタの製造方法
JP3760411B2 (ja) * 2003-05-21 2006-03-29 インターナショナル・ビジネス・マシーンズ・コーポレーション アクティブマトリックスパネルの検査装置、検査方法、およびアクティブマトリックスｏｌｅｄパネルの製造方法
KR100603836B1 (ko) * 2004-11-30 2006-07-24 엘지.필립스 엘시디 주식회사 유기전계발광 소자 및 그의 제조방법
WO2007088909A1 (ja) * 2006-01-31 2007-08-09 Kyocera Corporation 発光装置および発光モジュール
JP5295783B2 (ja) * 2007-02-02 2013-09-18 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
DE102007011123A1 (de) * 2007-03-07 2008-09-11 Osram Opto Semiconductors Gmbh Licht emittierendes Modul und Herstellungsverfahren für ein Licht emittierendes Modul
KR101592201B1 (ko) * 2008-11-06 2016-02-05 삼성전자 주식회사 발광 장치 및 그 제조 방법
JP4930548B2 (ja) * 2009-06-08 2012-05-16 サンケン電気株式会社 発光装置及びその製造方法
DE112011101156T5 (de) * 2010-04-01 2013-01-24 Panasonic Corporation Leuchtdiodenelement und Leuchtdiodenvorrichtung
JP5652252B2 (ja) * 2011-02-24 2015-01-14 ソニー株式会社 発光装置、照明装置および表示装置
US9666764B2 (en) * 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
WO2013005646A1 (ja) * 2011-07-01 2013-01-10 シチズンホールディングス株式会社 半導体発光素子の製造方法
US8952402B2 (en) * 2011-08-26 2015-02-10 Micron Technology, Inc. Solid-state radiation transducer devices having flip-chip mounted solid-state radiation transducers and associated systems and methods
WO2014018844A1 (en) * 2012-07-27 2014-01-30 Schlumberger Canada Limited Object detection system and methodology
US9178123B2 (en) * 2012-12-10 2015-11-03 LuxVue Technology Corporation Light emitting device reflective bank structure
US9159700B2 (en) * 2012-12-10 2015-10-13 LuxVue Technology Corporation Active matrix emissive micro LED display
US9105714B2 (en) * 2012-12-11 2015-08-11 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging bollards
US9252375B2 (en) * 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
CN108133942B (zh) * 2013-03-15 2022-03-25 苹果公司 具有冗余方案的发光二极管显示器和利用集成的缺陷检测测试制造发光二极管显示器的方法
US8791474B1 (en) * 2013-03-15 2014-07-29 LuxVue Technology Corporation Light emitting diode display with redundancy scheme
US8987765B2 (en) * 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US9111464B2 (en) * 2013-06-18 2015-08-18 LuxVue Technology Corporation LED display with wavelength conversion layer
US20170271548A1 (en) * 2013-06-26 2017-09-21 Epistar Corporation Light-emitting device and manufacturing method thereof
TWI534993B (zh) * 2013-09-25 2016-05-21 友達光電股份有限公司 無機發光二極體之畫素結構
TWI467528B (zh) * 2013-10-30 2015-01-01 Au Optronics Corp 發光二極體顯示面板及其製作方法
JP6328497B2 (ja) * 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置
CN104269427B (zh) * 2014-09-05 2017-03-29 京东方科技集团股份有限公司 一种有机发光二极管显示面板及其制作方法、显示装置
KR101649657B1 (ko) * 2014-10-07 2016-08-30 엘지전자 주식회사 반도체 소자 및 이의 제조 방법
US9825202B2 (en) * 2014-10-31 2017-11-21 eLux, Inc. Display with surface mount emissive elements
US10269776B2 (en) * 2014-12-16 2019-04-23 PlayNitride Inc. Light emitting device
KR102422246B1 (ko) * 2015-07-30 2022-07-19 삼성전자주식회사 발광 소자 패키지
KR102402999B1 (ko) * 2015-08-31 2022-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
GB2541970B (en) * 2015-09-02 2020-08-19 Facebook Tech Llc Display manufacture
US10177127B2 (en) * 2015-09-04 2019-01-08 Hong Kong Beida Jade Bird Display Limited Semiconductor apparatus and method of manufacturing the same
US10304811B2 (en) * 2015-09-04 2019-05-28 Hong Kong Beida Jade Bird Display Limited Light-emitting diode display panel with micro lens array
US10032757B2 (en) * 2015-09-04 2018-07-24 Hong Kong Beida Jade Bird Display Limited Projection display system
US10170455B2 (en) * 2015-09-04 2019-01-01 PlayNitride Inc. Light emitting device with buffer pads
JP6640872B2 (ja) * 2015-12-01 2020-02-05 シャープ株式会社 画像形成素子
TWI657563B (zh) * 2015-12-15 2019-04-21 優顯科技股份有限公司 光電裝置及其製造方法
CN106887488B (zh) * 2015-12-15 2019-06-11 群创光电股份有限公司 发光二极管及使用此发光二极管所制得的显示装置
KR102442612B1 (ko) * 2016-02-19 2022-09-14 삼성디스플레이 주식회사 발광 다이오드 트랜스퍼 방법
KR102651054B1 (ko) * 2016-02-22 2024-03-26 삼성디스플레이 주식회사 전사 장치, 이를 이용한 전사 방법 및 표시 장치
US10153257B2 (en) * 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
TWI588984B (zh) * 2016-03-14 2017-06-21 群創光電股份有限公司 顯示裝置
KR102537440B1 (ko) * 2016-03-18 2023-05-30 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조방법
US10223962B2 (en) * 2016-03-21 2019-03-05 X-Celeprint Limited Display with fused LEDs
KR102536254B1 (ko) * 2016-03-22 2023-05-25 삼성디스플레이 주식회사 Led 칩 실장 장치 및 상기 led 칩 실장 장치를 이용한 표시 장치의 제조 방법
US10103069B2 (en) * 2016-04-01 2018-10-16 X-Celeprint Limited Pressure-activated electrical interconnection by micro-transfer printing
KR102631260B1 (ko) * 2016-04-08 2024-01-31 삼성디스플레이 주식회사 표시장치 및 표시장치 제조방법
KR102550698B1 (ko) * 2016-04-11 2023-07-06 삼성디스플레이 주식회사 디스플레이 장치 및 조명 장치
KR102661474B1 (ko) * 2016-04-11 2024-04-29 삼성디스플레이 주식회사 디스플레이 장치
KR102559840B1 (ko) * 2016-04-20 2023-07-27 삼성디스플레이 주식회사 디스플레이 장치 및 이의 제조 방법
US10490534B2 (en) * 2016-05-20 2019-11-26 Innolux Corporation Display device with LED pixels
US10361179B2 (en) * 2016-05-20 2019-07-23 Innolux Corporation Display device
CN107437551B (zh) * 2016-05-25 2020-03-24 群创光电股份有限公司 显示装置及其制造方法
US10217678B2 (en) * 2016-06-14 2019-02-26 Innolux Corporation Display device and method of manufacturing the display device
US10121710B2 (en) * 2016-06-14 2018-11-06 Innolux Corporation Methods for manufacturing a display device
KR20180007025A (ko) * 2016-07-11 2018-01-22 삼성디스플레이 주식회사 초소형 발광 소자를 포함하는 픽셀 구조체, 표시장치 및 그 제조방법
KR102608419B1 (ko) * 2016-07-12 2023-12-01 삼성디스플레이 주식회사 표시장치 및 표시장치의 제조방법
TWI611599B (zh) * 2016-10-27 2018-01-11 友達光電股份有限公司 過渡載板裝置、顯示面板以及兩者的製造方法、微型發光件的檢測方法
CN106601657B (zh) * 2016-12-12 2019-12-17 厦门市三安光电科技有限公司 微元件的转移***、转移方法、制造方法、装置和电子设备
US11225066B2 (en) * 2017-03-29 2022-01-18 Xerox Corporation In-line detection and correction of underperforming light emitting diodes in a curing station of a three dimensional object printer
CN106941108B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
CN107170773B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
WO2019147738A1 (en) * 2018-01-23 2019-08-01 Light Share, LLC Full-color monolithic micro-led pixels

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104350613A (zh) * 2012-04-27 2015-02-11 勒克斯维科技公司 形成具有自对准金属化堆栈的微型led器件的方法
US20140027709A1 (en) * 2012-07-30 2014-01-30 John A. Higginson Method and structure for receiving a micro device
CN103390613A (zh) * 2013-08-14 2013-11-13 中国科学院长春光学精密机械与物理研究所 高发光均匀性的密排列led面阵器件及制备方法
CN105826435A (zh) * 2016-04-28 2016-08-03 歌尔声学股份有限公司 红光微发光二极管的形成方法、制造方法、背板及电子设备
CN106229326A (zh) * 2016-07-22 2016-12-14 深圳市华星光电技术有限公司 在曲面基板上转印微发光二极管的方法及曲面微发光二极管显示面板的制作方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3640990A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220037402A (ko) * 2019-07-24 2022-03-24 보에 테크놀로지 그룹 컴퍼니 리미티드 디스플레이 기판 및 그 제조 방법
JP2022549534A (ja) * 2019-07-24 2022-11-28 京東方科技集團股▲ふん▼有限公司 表示基板及びその製造方法
US11817307B2 (en) 2019-07-24 2023-11-14 Boe Technology Group Co., Ltd. Display substrate and method for manufacturing the same
KR102647425B1 (ko) * 2019-07-24 2024-03-14 보에 테크놀로지 그룹 컴퍼니 리미티드 디스플레이 기판 및 그 제조 방법

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US10269779B2 (en) 2019-04-23
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US20180342492A1 (en) 2018-11-29
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