JP7502658B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP7502658B2 JP7502658B2 JP2021200902A JP2021200902A JP7502658B2 JP 7502658 B2 JP7502658 B2 JP 7502658B2 JP 2021200902 A JP2021200902 A JP 2021200902A JP 2021200902 A JP2021200902 A JP 2021200902A JP 7502658 B2 JP7502658 B2 JP 7502658B2
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- 238000000034 method Methods 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 43
- 239000011347 resin Substances 0.000 claims description 37
- 229920005989 resin Polymers 0.000 claims description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000007788 roughening Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052596 spinel Inorganic materials 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052950 sphalerite Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910026161 MgAl2O4 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims (7)
- 第1面と、前記第1面の反対側に位置する第2面と、前記第1面と前記第2面とを接続する側面と、を有する半導体構造体と、前記側面を覆う第1絶縁膜と、前記第1面及び前記第1絶縁膜における前記第1面側の上面を覆う第2絶縁膜と、前記第2面と対向する基板と、を有する構造体を準備する工程と、
前記第1面の上方に位置する前記第2絶縁膜上にマスクを形成する工程と、
上面視において前記マスクの周囲に位置し、前記マスクから露出した前記第2絶縁膜の一部を除去する工程と、
を備え、
前記第2絶縁膜の前記一部を除去する工程において、前記第2絶縁膜の外縁が、上面視において、前記第1面の外側に位置する前記第1絶縁膜の領域内に位置するように、前記第2絶縁膜の前記一部を除去する発光素子の製造方法。 - 前記第1絶縁膜の前記上面は、第1端と、上面視において前記第1端と前記第1面の外縁との間に位置する第2端と、を有し、
前記マスクを形成する工程において、上面視における前記マスクの外縁を、前記第1端と前記第2端との間に位置させる請求項1に記載の発光素子の製造方法。 - 前記第2絶縁膜の前記一部を除去する工程において、前記第2絶縁膜の前記一部及び前記第2絶縁膜の下に位置する前記第1絶縁膜を除去し、前記第2絶縁膜の前記一部が除去された領域の下に前記第1絶縁膜が残らないようにする請求項1または2に記載の発光素子の製造方法。
- 前記第2絶縁膜の前記一部を除去する工程において、前記第2絶縁膜の前記一部及び前記第2絶縁膜の下に位置する前記第1絶縁膜を除去し、前記第2絶縁膜の前記一部が除去された領域の下に前記第1絶縁膜の一部が残るようにする請求項1または2に記載の発光素子の製造方法。
- 前記第1絶縁膜の膜厚を前記第2絶縁膜の膜厚よりも厚くする請求項1~4のいずれか1つに記載の発光素子の製造方法。
- 前記構造体は、前記基板と複数の前記半導体構造体との間、及び複数の前記半導体構造体の間に配置された樹脂部材をさらに有し、
前記第2絶縁膜は、複数の前記半導体構造体の前記第1面と、複数の前記半導体構造体の前記第1絶縁膜の前記上面と、前記樹脂部材の上面と、を覆い、
前記第2絶縁膜の前記一部を除去する工程において、前記樹脂部材の前記上面を前記第2絶縁膜から露出させ、
前記第2絶縁膜から露出した前記樹脂部材の前記上面側から前記樹脂部材を除去する工程をさらに備える請求項1~5のいずれか1つに記載の発光素子の製造方法。 - 前記第2絶縁膜は、シリコン酸化膜であり、
前記第2絶縁膜の前記一部を除去する工程において、前記第2絶縁膜をフッ素を含むガスを用いてエッチングし、
前記樹脂部材を除去する工程において、前記樹脂部材を酸素を含むガスを用いてエッチングする請求項6に記載の発光素子の製造方法。
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JP2021200902A JP7502658B2 (ja) | 2021-12-10 | 2021-12-10 | 発光素子の製造方法 |
US18/061,225 US20230187585A1 (en) | 2021-12-10 | 2022-12-02 | Method for manufacturing light-emitting element |
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JP2021200902A JP7502658B2 (ja) | 2021-12-10 | 2021-12-10 | 発光素子の製造方法 |
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JP2023086403A JP2023086403A (ja) | 2023-06-22 |
JP7502658B2 true JP7502658B2 (ja) | 2024-06-19 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227651A (ja) | 2006-02-23 | 2007-09-06 | Rohm Co Ltd | 2波長半導体発光装置及びその製造方法 |
JP2008518436A (ja) | 2004-10-22 | 2008-05-29 | ソウル オプト−デバイス カンパニー リミテッド | GaN系化合物半導体発光素子及びその製造方法 |
WO2012160604A1 (ja) | 2011-05-25 | 2012-11-29 | Dowaエレクトロニクス株式会社 | 発光素子チップ及びその製造方法 |
JP2013232477A (ja) | 2012-04-27 | 2013-11-14 | Toshiba Corp | 発光モジュール |
US20170186908A1 (en) | 2015-12-23 | 2017-06-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optoelectronic apparatus for light emission |
JP2020521180A (ja) | 2017-05-23 | 2020-07-16 | 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. | マイクロ発光ダイオード表示パネル及びその製造方法 |
-
2021
- 2021-12-10 JP JP2021200902A patent/JP7502658B2/ja active Active
-
2022
- 2022-12-02 US US18/061,225 patent/US20230187585A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008518436A (ja) | 2004-10-22 | 2008-05-29 | ソウル オプト−デバイス カンパニー リミテッド | GaN系化合物半導体発光素子及びその製造方法 |
JP2007227651A (ja) | 2006-02-23 | 2007-09-06 | Rohm Co Ltd | 2波長半導体発光装置及びその製造方法 |
WO2012160604A1 (ja) | 2011-05-25 | 2012-11-29 | Dowaエレクトロニクス株式会社 | 発光素子チップ及びその製造方法 |
JP2013232477A (ja) | 2012-04-27 | 2013-11-14 | Toshiba Corp | 発光モジュール |
US20170186908A1 (en) | 2015-12-23 | 2017-06-29 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Optoelectronic apparatus for light emission |
JP2020521180A (ja) | 2017-05-23 | 2020-07-16 | 深▲せん▼市華星光電技術有限公司Shenzhen China Star Optoelectronics Technology Co., Ltd. | マイクロ発光ダイオード表示パネル及びその製造方法 |
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US20230187585A1 (en) | 2023-06-15 |
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