WO2018205649A1 - Oled触控显示面板和触控显示装置 - Google Patents

Oled触控显示面板和触控显示装置 Download PDF

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Publication number
WO2018205649A1
WO2018205649A1 PCT/CN2018/070077 CN2018070077W WO2018205649A1 WO 2018205649 A1 WO2018205649 A1 WO 2018205649A1 CN 2018070077 W CN2018070077 W CN 2018070077W WO 2018205649 A1 WO2018205649 A1 WO 2018205649A1
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Prior art keywords
display panel
touch
touch display
self
layer
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PCT/CN2018/070077
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English (en)
French (fr)
Inventor
杨盛际
董学
陈小川
玄明花
王磊
付杰
肖丽
卢鹏程
刘冬妮
Original Assignee
京东方科技集团股份有限公司
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Priority to US16/074,107 priority Critical patent/US11209943B2/en
Publication of WO2018205649A1 publication Critical patent/WO2018205649A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0444—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single conductive element covering the whole sensing surface, e.g. by sensing the electrical current flowing at the corners
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0448—Details of the electrode shape, e.g. for enhancing the detection of touches, for generating specific electric field shapes, for enhancing display quality
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an OLED touch display panel and a touch display device.
  • AMOLED Active Matrix Organic Light Emitting Diode Display
  • LCD Liquid Crystal Display
  • the package cover may be a glass cover process or a Thin Film Encapsulation (TFE) process.
  • TFE Thin Film Encapsulation
  • a multi-layer film on-line (Muti Layer On Cell) touch structure is usually disposed on the film package structure.
  • the Samsung Galaxy S6 mobile phone adopts the above scheme.
  • the above-mentioned multilayer film external touch control structure is complicated and costly.
  • An embodiment of the present disclosure provides an OLED touch display panel including a TFT backplane and a cathode layer disposed on the TFT backplane, wherein the cathode layer includes a plurality of mutually insulated touch leads and a plurality of a self-capacitance electrode arranged in a matrix and arranged in a matrix, and the touch lead extends to a non-display area of the OLED touch display panel; and wherein each touch lead is connected to a self-capacitance electrode, and The resistance values of the plurality of touch leads connected to the self-capacitance electrodes in the same row are the same.
  • the left half of the OLED touch display panel is from left to right, and the width and length of the touch leads connected to the first column and the second column of self-capacitance electrodes are respectively the same; In addition to the self-capacitance electrodes, the length and width of the touch leads connected to the remaining self-capacitance electrodes are sequentially increased.
  • the left and right halves of the OLED touch display panel are from right to left, and the widths and lengths of the touch leads connected to the self-capacitance electrodes of the first column and the second column are respectively the same; and except for the first column of self-capacitance electrodes, The lengths and widths of the touch leads connected to the remaining self-capacitance electrodes are sequentially increased.
  • the self-capacitance electrode is rectangular.
  • the left half of the OLED touch display panel is from left to right, and the area of the self-capacitance electrode is gradually increased.
  • the right half of the OLED touch display panel is from right to left, and the area of the self-capacitance electrode is gradually increased.
  • the sum of the widths of the touch leads connected to the self-capacitance electrodes of the same row is less than or equal to the row in any of the left or right half of the OLED touch display panel.
  • the largest self-capacitance electrode width of 10%.
  • the width direction of the touch lead and the width direction of the self-capacitance electrode are both perpendicular to the extending direction of the touch lead.
  • the left half of the OLED touch display panel is from left to right, and the width of the touch lead connected to the first column and the second column of the self-capacitance electrode is one of the OLED touch display panels.
  • the sub-pixels have the same width.
  • the left and right halves of the OLED touch display panel are from right to left, and the widths of the touch leads connected to the first and second columns of self-capacitance electrodes are the same as the width of the OLED touch display panel.
  • the sub-pixels have the same width.
  • the OLED touch display panel further includes a plurality of L-shaped retaining walls disposed on the TFT back plate and a plurality of strip-shaped retaining walls parallel to the horizontal edges of the L-shaped retaining walls, wherein The left half of the OLED touch display panel is from left to right, or the right part is from right to left, and the sizes of the plurality of L-shaped retaining walls are sequentially increased.
  • the vertical sides of two adjacent L-shaped retaining walls are respectively connected to the two ends of a strip-shaped retaining wall, and the vertical sides of the two adjacent L-shaped retaining walls and one The strip-shaped retaining wall defines a touch area, and the horizontal edges of the adjacent two L-shaped retaining walls define a lead area connected to the touch area.
  • the L-shaped retaining wall and the strip-shaped retaining wall separate the cathode layer from the self-capacitance electrode located in the touch area and the touch in the lead area Control leads.
  • the left half of the OLED touch display panel is from left to right, or the right part is from right to left, and is used to define an opening direction of two adjacent L-shaped retaining walls of the first column of touch regions. Relatively set, and the opening directions of the adjacent two L-shaped retaining walls of the remaining columns are the same.
  • the horizontal edge of the L-shaped barrier for defining the touch area of the previous row is shared with the strip-shaped barrier for defining the touch region of the next row.
  • the OLED touch display panel further includes a pixel defining layer disposed on the TFT backplane, wherein the pixel defining layer includes horizontally and vertically intersecting pixel spacers, and surrounded by the pixel spacers An opening; and wherein the L-shaped retaining wall and the strip-shaped retaining wall are located on a side of the pixel divider facing away from the TFT backplane.
  • the longitudinal cross-sectional shape of the L-shaped retaining wall and the strip retaining wall is an inverted trapezoid, and the longitudinal section is perpendicular to the TFT backing plate.
  • the OLED touch display panel further includes a spacer disposed on the TFT back panel in the touch area, wherein the L-shaped retaining wall and the strip-shaped retaining wall and the The spacer is of the same material as the same layer, and the L-shaped retaining wall and the strip-shaped retaining wall are formed of a negative photoresist.
  • the spacer comprises a plurality of first sub-pads and a plurality of second sub-pads; wherein the plurality of first sub-pads are arranged in a matrix form, and the The two sub-pads are located between two adjacent rows and two adjacent rows of first sub-pads; and wherein the first sub-pads extend in a direction perpendicular to the direction in which the second sub-pads extend .
  • the OLED touch display panel further includes an organic material functional layer.
  • the organic material functional layer includes a hole injection layer, a hole transport layer, a liner layer, a buffer layer, an organic light-emitting layer, and an electron transport layer which are sequentially located on a side of the TFT back sheet near the cathode layer.
  • the hole injection layer, the hole transport layer, the buffer layer, and the electron transport layer completely cover a display region of the TFT backplane; the organic light emitting layer and the liner layer and the opening The location corresponds.
  • the OLED touch display panel further includes an organic material functional layer.
  • the organic material functional layer includes a hole injection layer, a hole transport layer, a liner layer, a buffer layer, and an organic layer which are sequentially located on a side of the TFT back sheet near the cathode layer and correspond to a position of the opening.
  • a light emitting layer and an electron transport layer are sequentially located on a side of the TFT back sheet near the cathode layer and correspond to a position of the opening.
  • the cathode layer comprises at least one of metallic magnesium and metallic silver.
  • Another aspect of the embodiments of the present disclosure provides a touch display device including any of the OLED touch display panels as described above.
  • FIG. 1 is a schematic structural diagram of an OLED touch display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a multiplexing structure of a cathode layer and a self-capacitance electrode of FIG. 1;
  • 3a is a schematic view showing a connection structure of the touch lead shown in FIG. 2 in a non-display area;
  • FIG. 3b is a schematic diagram showing a specific connection structure of the metal thin film layer and the touch lead shown in FIG. 3a in a non-display area;
  • FIG. 5 is a schematic view showing the arrangement structure of the self-capacitance electrode and the touch lead in FIG. 1;
  • FIG. 6 is a schematic structural view of an OLED touch display panel provided with an L-shaped retaining wall
  • FIG. 7 is a schematic view of the L-shaped retaining wall and the strip retaining wall of FIG. 6 defining a plurality of touch areas;
  • FIG. 8 is a schematic structural view of the first column of the touch area in FIG. 7;
  • FIG. 9 is a schematic structural view of a column touch area other than the first column in FIG. 7;
  • FIG. 10 is a schematic structural view of a self-capacitance electrode and a touch lead divided by the L-shaped retaining wall and the strip-shaped retaining wall shown in FIG. 7;
  • FIG. 11 is a schematic view showing a spacer disposed in the touch zone defined by the L-shaped retaining wall and the strip retaining wall shown in FIG. 10;
  • Figure 12 is a schematic view showing the distribution of the spacers of Figure 11;
  • FIG. 13 is a schematic structural view of a functional layer for fabricating an organic material provided by the present application.
  • FIG. 14 is another schematic structural view of a functional layer for fabricating an organic material provided by the present application.
  • An embodiment of the present disclosure provides an OLED touch display panel, as shown in FIG. 1 , including a TFT backplane 10 and a cathode layer 20 disposed on the TFT backplane 10 .
  • the cathode layer 20 shown in FIG. 2 includes a plurality of mutually insulated touch leads 202 and a plurality of self-capacitance electrodes 201 that are insulated from each other and arranged in a matrix.
  • the touch lead 202 extends to the non-display area B of the OLED touch display panel.
  • Each of the touch leads 202 is connected to a self-capacitance electrode 201, and the resistance values of the plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 are uniform.
  • the “consistent” in the above “the resistance values of the plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 are the same” means that within the range allowed by the design and fabrication tolerances, the same line The plurality of touch leads 202 connected to the capacitor electrode 201 have the same or approximately the same resistance value.
  • a plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 are disposed in parallel with each other.
  • the direction in which the row (R) of the self-capacitance electrode 201 extends is the same as the direction in which the plurality of touch leads 202 connected to the row of the self-capacitance electrode 201 extend.
  • the cathode layer 20 includes a plurality of self-capacitance electrodes 201 which are insulated from each other and arranged in a matrix form, the cathode layer 20 can be multiplexed with the self-capacitance electrode 201. That is, when the OLED touch display panel is in the display stage, a voltage is applied to the cathode layer 20 to form an electric field between the cathode layer 20 and the anode on the TFT back plate 10, thereby exciting the cathode layer 20 and the OLED touch display panel.
  • the organic light-emitting layer between the anodes in the light emits light.
  • each of the self-capacitance electrodes 201 can be electrically connected to the metal thin film layer 13 as shown in FIG. 3a in the non-display area B through the touch lead 202 connected thereto.
  • the touch lead 202 is electrically connected to the metal thin film layer 13 through a transparent conductive film layer (for example, ITO shown in FIG. 3b, which is formed of, for example, indium tin oxide).
  • the metal thin film layer 13 is connected to the ground (GND) or the low voltage (VSS), so that the self-capacitance electrode 201 and the ground or the voltage terminal form a self-capacitance.
  • the self-capacitance electrodes 201 of the N rows and the M columns may be scanned (ie, N+M scans are performed), so that the self-capacitance according to the capacitance value is changed.
  • the coordinates determine the touch position.
  • N and M are positive integers greater than or equal to 2.
  • the metal thin film layer 13 in FIG. 3a is connected to the touch chip 14 (Touch IC) disposed on the FPC in the non-display area B except for the ground terminal or the voltage end of the non-display area B.
  • the connection is used to output the signal collected by the touch lead 202 to the touch chip 14 .
  • the resistance values of the plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 are the same, the resistance values of the plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 are themselves
  • the signals input by the respective touch leads 202 to the self-capacitance electrodes 201 connected to them and the acquisition signals outputted to the touch chip 14 have the same effect, so that the resistance of the touch leads 202 can be reduced.
  • the material constituting the cathode layer 20 is a metal material such as at least one of metallic magnesium (Mg) and metallic silver (Ag), since the metal has good ductility, when the above OLED is touched When the control panel is applied to the flexible display field, a better bending effect can be obtained, thereby solving the problem that the electrode in the touch structure is used in the case of using the multilayer film externally embedded touch structure.
  • the transparent conductive material is constructed to cause defects that cannot meet the bending requirements.
  • the display area A of the OLED touch display panel is divided into a left half screen and a right half screen.
  • a plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 in the left half of the screen extend to the non-display area B of the left half of the OLED touch display panel; and the same row of self-capacitance electrodes 201 are connected in the right half screen
  • the plurality of touch leads 202 extend to the non-display area B of the right half of the OLED touch display panel.
  • orientation terms such as “left” and “right” are defined relative to the orientation in which the OLED touch display panel is schematically placed in the drawing. It should be understood that these directional terms are relative concepts that are used for relative description and clarification, which may vary accordingly depending on the orientation of the OLED touch display panel.
  • the left half of the OLED touch display panel is from left to right, and the width W of the touch line 202 connected to the self-capacitance electrode 201 of the first column C1 and the second column C2 is different. Further, in addition to the first column C1 self-capacitance electrode 201, the length L and the width W of the touch-control leads 202 connected to the remaining column self-capacitance electrodes 201 are sequentially increased.
  • the left and right halves of the OLED touch display panel are from right to left, and the widths W and L of the touch leads 202 connected to the first column C1' and the second column C2' from the capacitor electrode 201 are respectively the same. Further, in addition to the first column C1' self-capacitance electrode 201, the length L and the width W of the touch-sensitive lead wires 202 connected to the remaining column self-capacitance electrodes 201 are sequentially increased.
  • the left half of the OLED touch display panel is from left to right or the right and left half of the OLED touch display panel is from right to left
  • the touch lead 202 connected to the first column C1 self-capacitance electrode 201 The width W1 is the same as the width W2 of the touch lead 202 connected to the self-capacitance electrode 201 of the second column C2.
  • the width of the touch lead 202 is the line width of the touch lead 202.
  • the length L1 of the touch lead 202 connected to the first column C1 of the self-capacitance electrode 201 is the same as the length L2 of the touch lead 202 connected to the self-capacitance electrode 201 of the second column C2.
  • the length of the touch lead 202 is the same as the extending direction of the row of self-capacitance electrodes 201.
  • the left half of the OLED touch display panel is from left to right or the right and left half of the OLED touch display panel is from right to left, except for the first column C1 self-capacitance electrode 201, and the remaining column self-capacitance electrodes 201
  • the length L and the width W of the connected touch leads 202 are sequentially increased.
  • the resistance value of the touch lead 202 is proportional to its width W, the length L is inversely proportional. Therefore, when the length L and the width W of the three touch leads 202 respectively connected to the capacitor electrodes TX1, TX2, and TX3 are incremented by this, the resistance values of the three touch leads 202 can be kept the same or approximately the same, thereby achieving Resistance design. In this way, the influence of the IR-Drop phenomenon caused by the difference in lead resistance on the display and touch performance of the OLED touch display panel can be reduced.
  • the above description is merely illustrative of the manner in which the lengths and widths of the self-capacitance electrodes TX1, TX2, and TX3 are set.
  • the left half or the right half of the OLED touch display panel includes three or more self-capacitance electrodes 201
  • the length and width of the touch leads 202 connected to the same row of self-capacitance electrodes 201 follow the self-capacitance electrode 201.
  • the number of columns in the left half or the right half of the OLED touch display panel increases.
  • the length and width of the plurality of touch leads 202 connected to the same row of self-capacitance electrodes 201 are gradually increased in the form of an arithmetic progression, thereby being easy to implement.
  • the sum of the widths of the touch leads 202 connected to the self-capacitance electrodes 201 of the same row is less than or equal to the row.
  • the largest area of the self-capacitance electrode 201 is 10% of the width.
  • the width direction of the touch lead 202 and the width direction of the self-capacitance electrode 201 are both perpendicular to the extending direction of the touch lead 202.
  • the sum of the widths of all the touch leads 202 connected to the same row of self-capacitance electrodes 201 can be effectively controlled, so that any pressing position in the touch process can be basically the same as the position of a certain self-capacitance electrode 201.
  • the self-capacitance electrode 201 is rectangular, for example, square.
  • the left half of the OLED touch display panel is from left to right, and the area of the self-capacitance electrode 201 is gradually increased.
  • the right half of the OLED touch display panel is from right to left, and the area of the self-capacitance electrode 201 is gradually increased.
  • the plurality of self-capacitance electrodes 201 are charged as the cathode layer 20 during display. At the same time, the amount of charge is gradually increased.
  • the human eye does not find the slight difference in electric power between the two adjacent self-capacitance electrodes 201, so that the display brightness of the OLED touch display panel can be kept uniform.
  • the applicant finds that the brightness uniformity of the display screen of the OLED touch display panel (for example, a striped picture) is good.
  • the resolution of the OLED touch display panel is not limited.
  • the self-capacitance electrode 201 and the touch lead 202 can still adopt the above setting manner. Based on this, when the resolution is increased, in order to reduce the IR-Drop phenomenon, the left half screen or the right half screen of the OLED touch display panel can be increased, and the center position of the touch display panel is close to the OLED touch display panel.
  • the portion of the self-capacitance electrode 201 is connected to the wiring space of the touch lead 202.
  • the touch is connected to the first column C1 (or C1') and the second column C2 (or C2') from the capacitor electrode 201.
  • the width of the lead 202 should be as small as possible.
  • the left half of the OLED touch display panel is from left to right, and the width of the touch lead 202 connected to the first column C1 and the second column C2 is connected to the self-capacitance electrode 201 and one of the OLED touch display panels.
  • the sub-pixels have the same width.
  • the left and right halves of the OLED touch display panel are from right to left, and the widths of the touch leads 202 connected to the first column C1' and the second column C2' from the capacitor electrode 201 are different from those of the OLED touch display panel.
  • One sub-pixel has the same width.
  • the OLED touch display panel further includes a plurality of L-shaped barrier walls as shown in FIG. 7 and a plurality of L-shaped barrier walls 11 disposed on the TFT backplane 10 as shown in FIG. The horizontal side is parallel to the strip-shaped retaining wall 11'.
  • the left half of the OLED touch display panel is from left to right, or the right part is from right to left, and the sizes of the plurality of L-shaped retaining walls 11 are sequentially increased.
  • the vertical sides of the adjacent two L-shaped retaining walls 11 are respectively connected to both ends of one strip-shaped retaining wall 11'.
  • the vertical sides of the adjacent two L-shaped retaining walls 11 and the one-shaped retaining wall 11' define a touch area 101.
  • the horizontal edges of the adjacent two L-shaped retaining walls define a lead region 102 that is connected to the touch region 101.
  • the left half of the OLED touch display panel is from left to right, or the right part is from right to left, and is used to define the adjacent of the first column C1 (or C1') touch area 101.
  • the opening directions of the two L-shaped retaining walls 11 are oppositely arranged.
  • Figure 8 is an enlarged schematic view showing the shape of the touch area 101 in the first column C1 (or C1') of Figure 7.
  • the opening directions of the adjacent two L-shaped retaining walls 11 in the remaining columns are the same
  • FIG. 9 is the touch in FIG. 7 after the second column C2 (or C2') and the second column C2 (or C2').
  • the horizontal edge of the L-shaped barrier wall 11 for defining the upper row of touch areas 101 and the strip for defining the next row of touch areas 101 is shared.
  • the horizontal side of the L-shaped retaining wall 11 is the same as the extending direction of the touch lead 202, and the vertical side of the L-shaped retaining wall 11 is perpendicular to the extending direction of the touch lead 202.
  • the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' are used to separate the cathode layer 20, as shown in FIG. 10, from the self-capacitance electrode 201 located in the touch area 101 and in the lead region 102.
  • the touch lead 202 is inside.
  • the left half of the OLED touch display panel is from left to right, or the right part is from right to left, by sequentially increasing the size of the plurality of L-shaped retaining walls 11 and
  • the opening directions of the adjacent two L-shaped retaining walls 11 of one column C1 (or C1') touch area 101 are oppositely arranged, and the opening directions of the adjacent two L-shaped retaining walls 11 of the remaining columns are the same, which can make the above L
  • the plurality of self-capacitance electrodes 201 formed by dividing the cathode layer 20 by the type of the retaining wall 11 and the strip-shaped retaining wall 11' are connected to the remaining columns of the self-capacitance electrodes 201 except for the first column C1 of the self-capacitance electrodes 201.
  • the length L and the width W of the lead 202 are sequentially increased, and the area of the self-capacitance electrode 201 of the left half screen and the right half screen of the OLED touch display panel is progressively increased, thereby facilitating the equal resistance design of the touch lead and improving Shows the uniformity of brightness.
  • the above-mentioned retaining wall can also support the package cover in the OLED touch display panel to make the surface of the OLED touch display panel flat.
  • the above OLED touch display panel further includes a pixel defining layer 30 disposed on the TFT backplane 10 as shown in FIG.
  • the pixel definition layer 30 includes a horizontally intersecting pixel spacer 301, and an opening 302 surrounded by the pixel spacer 301.
  • the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' are located on the side of the pixel spacer 301 facing away from the TFT backing plate 10.
  • the opening position 302 corresponds to the effective display area of each sub-pixel, and the pixel spacer 301 is located in the non-display area, when the above-mentioned retaining wall 11 is disposed on the side of the pixel spacer 301 facing away from the TFT back plate 10, The occlusion of the effective display area by the retaining wall 11 can be avoided, so that the influence on the display effect can be reduced.
  • the longitudinal cross-sectional shape of the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' is as shown in the figure.
  • the longitudinal section is perpendicular to the TFT backplane 10.
  • the cathode layer 20 can be broken to form in the touch area 101 defined by the L-shaped retaining wall 11 and the strip-shaped retaining wall 11'.
  • the self-capacitance electrode 201 forms the touch lead 202 in the lead region 102 defined by the horizontal sides of the adjacent two L-shaped barrier walls 11.
  • the package cover 15 in the OLED touch display panel provided by the present application may be a cover glass or a package film layer.
  • the OLED touch display panel further includes a plurality of spacers 110 formed in the touch area 101 as shown in FIG.
  • the spacer 110 may be located on a side of the pixel defining layer 30 of the pixel defining layer 30 facing away from the TFT backplane 10.
  • the spacer 110 is disposed in the touch area 101, the position of the spacer 110 and the retaining wall 11 does not overlap.
  • the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' having the inverted trapezoidal longitudinal section are formed.
  • the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' are of the same material as the spacer 110.
  • the material constituting the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' is a negative photoresist.
  • the shape of the longitudinal section of the spacer 110, the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' formed by the one-mask exposure (MASK) process is the above-described inverted trapezoid.
  • the cathode layer 20 is formed on the substrate on which the spacer 110, the L-shaped barrier wall 11 and the strip-shaped retaining wall 11' are formed, for example, when a MgAg alloy thin film layer is formed by an evaporation process, the spacer 110, The cutting of the angle between the L-shaped retaining wall 11 and the strip-shaped retaining wall 11' between the long side and the side edge can break the cathode layer 20, and the spacer 110L type retaining wall 11 and the strip retaining wall The surface of the 11' has a floating film layer, and since the film layer is island-shaped, the influence on the OLED touch display panel is small.
  • the number of spacers 110 can be increased in the touch area 101, and the spacer can be optimized.
  • the arrangement of the objects 110 can be optimized.
  • the spacer 110 includes a plurality of first sub-spacers 110a and a plurality of second sub-spacers 110b.
  • the plurality of first sub-spacers 110a are arranged in a matrix form.
  • the second sub-pad 110b is located between two adjacent rows and two adjacent columns of the first sub-pads 110a.
  • the extending direction of the first sub-spacer 110a is perpendicular to the extending direction of the second sub-spacer 110b. In this way, the thin film layer in the floating state in the touch region 101 can be further increased, so that the area of the self-capacitance electrode 202 is further reduced.
  • the cathode layer 20 is formed.
  • the method of fabricating the OLED touch display panel further includes forming an organic material functional layer at least in the opening of the pixel defining layer 30.
  • the organic material functional layer includes a hole injection layer (HI) 401, a hole transport layer (HT) 402, which is sequentially located on the side of the TFT back plate 10 near the cathode layer 20, and is used to adjust the height of the microcavity.
  • HI hole injection layer
  • HT hole transport layer
  • EML organic light-emitting layer
  • ETL electron transport layer electron transport layer
  • the hole injection layer 401, the hole transport layer 402, the buffer layer 406, and the electron transport layer 404 completely cover the display of the TFT back sheet 10.
  • the organic light-emitting layer 403 and the liner layer 405 correspond to the positions of the openings 302.
  • the thicknesses of the hole injection layer 401 and the hole transport layer 402 are respectively with The thickness of the buffer layer 406 can be The thickness of the electron transport layer 404 is
  • red light (R), green light (G), and blue light (B) can be emitted under the electric field excitation of the anode and cathode layers 20.
  • the thicknesses of the red (R) organic light-emitting layer 403, the green (G) organic light-emitting layer 40, and the blue (B) organic light-emitting layer 403 are respectively
  • FIG. 4 is an example in which the heights of the microcavities in which the red (R) organic light-emitting layer 403 and the green (G) organic light-emitting layer 40 are located are adjusted, respectively.
  • the above liner layer 405 may be formed at an opening position corresponding to the microcavity where the blue (B) organic light emitting layer 403 is located.
  • the thickness of the microcavity in which the red (R) organic light-emitting layer 403 and the green (G) organic light-emitting layer 40 are located is adjusted to be the thickness of the spacer layer 405, respectively.
  • the organic light-emitting layer 403 and the spacer layer 405 correspond to the positions of the openings 302, and the remaining thin film layers completely cover the display region of the TFT back sheet 10. Therefore, the organic light-emitting layer 403 and the liner layer 405 can be formed using a fine mask (FMM).
  • the remaining film layers can be used as a common mask. Thereby, the number of FMMs can be reduced, and the manufacturing cost can be reduced.
  • the structure of the above-mentioned organic material functional layer includes holes which are sequentially located on the side of the TFT back sheet 10 close to the cathode layer 20 and correspond to the position of the opening 302.
  • the touch lead 202 and the self-capacitance electrode 201 are in the same layer structure as shown in FIG. 10, the touch lead 202 can be oriented regardless of whether the structure of each OLED device is independent.
  • the self-capacitance electrode 201 transmits signals so that the respective OLED devices can operate normally. Therefore, the structures of the two organic material functional layers provided in the above-mentioned FIG. 13 and FIG. 14 are applicable to the present scheme. Of course, in order to simplify the manufacturing process and save costs, for example, the manufacturing method shown in FIG. 13 is employed.
  • the cathode layer 20 can be fabricated, and the thickness of the cathode layer 20 can be Further, a capping layer 407 may be formed on the surface of the cathode layer 20 to improve the electrical properties of the cathode layer 20.
  • the thickness of the cover layer 407 can be
  • the embodiments of the present disclosure provide a touch display device, including the OLED touch display panel as described above, which has the same beneficial effects as the OLED touch display panel provided by the foregoing embodiments.
  • the touch display device further includes a driving component or a driving circuit, such as an FPC, a touch chip 14 , and a display driving chip 17 , which are disposed in the non-display area of the OLED touch display panel.
  • a driving component or a driving circuit such as an FPC, a touch chip 14 , and a display driving chip 17 , which are disposed in the non-display area of the OLED touch display panel.
  • the touch display device may be any product or component having a display function, such as a television, a digital photo frame, a mobile phone, or a tablet computer.
  • the present disclosure provides an OLED touch display panel and a touch display device.
  • the OLED touch display panel includes a TFT backplane and a cathode layer disposed on the TFT backplane.
  • the cathode layer includes a plurality of mutually insulated touch leads and a plurality of self-capacitance electrodes insulated from each other and arranged in a matrix.
  • the touch leads extend to the non-display area of the OLED touch display panel.
  • Each of the touch leads is connected to a self-capacitance electrode, and the resistance values of the plurality of touch leads connected to the same row of the self-capacitance electrodes are the same.
  • the cathode layer can be multiplexed with the self-capacitance electrode since the cathode layer includes a plurality of self-capacitance electrodes that are insulated from each other and arranged in a matrix. That is, when the OLED touch display panel is in the display stage, a voltage is applied to the cathode layer to form an electric field between the cathode layer and the anode on the TFT back plate, thereby exciting the anode located in the cathode layer and the OLED touch display panel. The organic light-emitting layer is illuminated.
  • each of the self-capacitance electrodes can be electrically connected to the metal thin film layer located in the non-display area through the touch lead connected thereto.
  • the metal film layer is connected to the ground terminal or the low voltage terminal, so that the self-capacitance electrode and the ground terminal or the voltage terminal form a self-capacitance.
  • the self-capacitance electrodes of the N rows and the M columns may be scanned to determine the touch position according to the coordinates of the self-capacitance whose capacitance value changes.
  • an in-cell touch structure having a simple structure can be realized by multiplexing the cathode layer and the self-capacitance electrode. Therefore, it is not necessary to adopt a scheme of providing a multilayer thin film touch structure on the outer side of the package cover, thereby simplifying the structure of the OLED touch display panel.
  • the metal thin film layer is connected to the touch chip disposed on the FPC in the non-display area for collecting the signal of the touch lead. Output to the touch chip.
  • the resistance values of the plurality of touch leads connected to the same row of self-capacitance electrodes are the same, the resistance values of the plurality of touch leads connected to the same row of self-capacitance electrodes are opposite to the respective touch leads.
  • the effects of the signals input to the self-capacitance electrodes connected to them and the acquisition signals outputted to the touch chip are the same, so that by controlling the resistance of the touch leads, the IR drop due to the difference in lead resistance can be reduced.
  • the influence of the display and touch performance of the OLED touch display panel is the influence of the display and touch performance of the OLED touch display panel.

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Abstract

一种OLED触控显示面板和触控显示装置。OLED触控显示面板包括TFT背板（10）以及设置于TFT背板（10）上的阴极层（20）。阴极层（20）包括多个相互绝缘的触控引线（202）以及多个相互绝缘且呈矩阵形式排列的自电容电极（201）。触控引线（202）延伸至OLED触控显示面板的非显示区（B）。每一条触控引线（202）与一个自电容电极（201）相连接，并且与同一行（R）自电容电极（201）相连接的多条触控引线（202）的电阻值均一致。

Description

OLED触控显示面板和触控显示装置
相关申请的交叉引用
本申请主张于2017年5月10日提交的中国专利申请No.201710328879.6的优先权，其全部内容通过引用结合于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种OLED触控显示面板和触控显示装置。
背景技术
AMOLED(Active Matrix Organic Light Emitting Diode Display，，有源矩阵驱动有机发光二极管显示装置)具有低制造成本、高应答速度、省电、可用于便携式设备的直流驱动、工作温度范围大等等优点而可望成为取代LCD(Liquid Crystal Display，液晶显示器)的下一代新型平面显示器。特别是柔性AMOLED，因其具有轻薄、可弯曲或折叠、能任意改变形状等优点，正越来越受到市场重视。
对于AMOLED中通常需要设置封装盖板，以达到阻隔水氧的作用。上述封装盖板可以为玻璃盖板工艺或者薄膜封装(Thin Film Encapsulation，TFE)工艺。当采用薄膜封装工艺时，通常在薄膜封装结构上设置有多层薄膜外嵌式(Muti Layer On Cell)的触控结构，例如三星公司型号为Galaxy S6的手机即采用上述方案。然而，上述多层薄膜外嵌式触控结构复杂，成本较高。
发明内容
本公开实施例的一方面，提供一种OLED触控显示面板，包括TFT背板以及设置于所述TFT背板上的阴极层，其中所述阴极层包括多个相互绝缘的触控引线以及多个相互绝缘且呈矩阵形式排列的自电容电极，并且所述触控引线延伸至所述OLED触控显示面板的非显示区；以及其中每一条触控引线与一个自电容电极相连接，并且与同一行所述自电容电极相连接的多条触控引线的电阻值均一致。
在一实施例中，所述OLED触控显示面板左半部分从左至右，与 第一列和第二列自电容电极相连接的触控引线的宽度、长度分别相同；并且除了第一列自电容电极以外，与其余列所述自电容电极相连接的触控引线长度和宽度依次增加。所述OLED触控显示面板左右半部分从右至左，与第一列和第二列自电容电极相连接的触控引线的宽度、长度分别相同；并且除了第一列自电容电极以外，与其余列所述自电容电极相连接的触控引线长度和宽度依次增加。
在一实施例中，所述自电容电极为矩形。所述OLED触控显示面板左半部分从左至右，所述自电容电极的面积逐渐增大。所述OLED触控显示面板右半部分从右至左，所述自电容电极的面积逐渐增大。
在一实施例中，所述OLED触控显示面板的左半部分或右半部分中的任意一部分中，与同一行的自电容电极相连接的触控引线的宽度之和小于或等于该行中面积最大的自电容电极宽度的10％。所述触控引线的宽度方向和所述自电容电极的宽度方向均与所述触控引线的延伸方向垂直。
在一实施例中，所述OLED触控显示面板左半部分从左至右，与第一列和第二列自电容电极相连接的触控引线的宽度与所述OLED触控显示面板的一个亚像素的宽度相同。
在一实施例中，所述OLED触控显示面板左右半部分从右至左，与第一列和第二列自电容电极相连接的触控引线的宽度与所述OLED触控显示面板的一个亚像素的宽度相同。
在一实施例中，该OLED触控显示面板还包括设置于所述TFT背板上的多个L型挡墙以及多个与所述L型挡墙的水平边平行的条状挡墙，其中所述OLED触控显示面板左半部分从左至右，或者右边部分从右至左，多个L型挡墙的尺寸依次增大。
在一实施例中，相邻的两个L型挡墙的竖直边分别与一个条状挡墙的两端相连接，所述相邻的两个L型挡墙的竖直边和一所述条状挡墙限定出一个触控区，所述相邻的两个L型挡墙的水平边限定出与该触控区相连接的引线区。
在一实施例中，所述L型挡墙和所述条状挡墙将所述阴极层分隔出位于所述触控区内的所述自电容电极以及位于所述引线区内的所述触控引线。
在一实施例中，所述OLED触控显示面板左半部分从左至右，或 者右边部分从右至左，用于限定第一列触控区的相邻两个L型挡墙的开口方向相对设置，并且其余列的相邻两个L型挡墙的开口方向相同。
在一实施例中，除了第一行触控区以外，用于限定上一行触控区的L型挡墙的水平边与用于限定下一行触控区的条状挡墙共用。
在一实施例中，该OLED触控显示面板还包括设置于所述TFT背板上的像素定义层，其中所述像素定义层包括横纵交叉的像素分隔物，以及由所述像素分隔物围设的开口；以及其中所述L型挡墙和所述条状挡墙位于所述像素分隔物背离所述TFT背板的一侧。
在一实施例中，所述L型挡墙和所述条状挡墙的纵截面形状为倒梯形，并且所述纵截面垂直于所述TFT背板。
在一实施例中，该OLED触控显示面板还包括设置于所述TFT背板上位于所述触控区内的隔垫物，其中所述L型挡墙和所述条状挡墙与所述隔垫物同层同材料，并且所述L型挡墙和所述条状挡墙由负性光刻胶形成。
在一实施例中，所述隔垫物包括多个第一子隔垫物和多个第二子隔垫物；其中所述多个第一子隔垫物呈矩阵形式排列，并且所述第二子隔垫物位于相邻两行和相邻两列第一子隔垫物之间；以及其中所述第一子隔垫物的延伸方向与所述第二子隔垫物的延伸方向垂直。
在一实施例中，该OLED触控显示面板还包括有机材料功能层。所述有机材料功能层包括依次位于所述TFT背板靠近所述阴极层一侧的空穴注入层、空穴传输层、衬垫层、缓冲层、有机发光层以及电子传输层。所述空穴注入层、所述空穴传输层、所述缓冲层以及所述电子传输层完全覆盖所述TFT背板的显示区；所述有机发光层和所述衬垫层与所述开口的位置相对应。
在一实施例中，该OLED触控显示面板还包括有机材料功能层。所述有机材料功能层包括依次位于所述TFT背板靠近所述阴极层一侧，并且与所述开口的位置相对应的空穴注入层、空穴传输层、衬垫层、缓冲层、有机发光层以及电子传输层。
在一实施例中，所述阴极层包括金属镁和金属银中的至少一种。
本公开实施例的另一方面，提供一种触控显示装置，包括如上所述的任意一种OLED触控显示面板。
附图说明
为了更清楚地说明本公开实施例中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的一种OLED触控显示面板的结构示意图；
图2为图1中阴极层与自电容电极的复用结构示意图；
图3a为图2所示的触控引线在非显示区的连接结构示意图；
图3b为图3a中所示的金属薄膜层与触控引线在非显示区的具体连接结构示意图；
图4为一种已知的外嵌式触控结构示意图；
图5为图1中的自电容电极与触控引线的排布结构示意图；
图6为设置有L型挡墙的OLED触控显示面板的结构示意图；
图7为图6中的L型挡墙以及条形挡墙限定出多个触控区的示意图；
图8为图7中第一列触控区的结构示意图；
图9为图7中除了第一列以外的其他列触控区的结构示意图；
图10为采用图7所示的L型挡墙以及条形挡墙分割成的自电容电极和触控引线的结构示意图；
图11为在图10所示的L型挡墙以及条形挡墙限定出的触控区内设置隔垫物的示意图；
图12为图11中隔垫物的分布示意图；
图13为本申请提供的制作有机材料功能层的一种结构示意图；以及
图14为本申请提供的制作有机材料功能层的另一种结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例， 都属于本公开保护的范围。
附图标记：10--TFT背板；20-阴极层；201-自电容电极；202-触控引线；11-L型挡墙；11’-条形挡墙；101-触控区；102-引线区；110a-第一子隔垫物；110b-第二子隔垫物；110-隔垫物；13-金属薄膜层；14-触控芯片；15-封装盖板；16-多层薄膜触控结构；17-显示驱动芯片；A-OLED触控显示面板的显示区；B-OLED触控显示面板的非显示区；30-像素定义层；301-像素分隔物；302-开口；401-空穴注入层；402-空穴传输层；403-有机发光层；404-电子传输层；405-衬垫层；406-缓冲层；407-覆盖层。
本公开实施例提供一种OLED触控显示面板，如图1所示，包括TFT背板10以及设置于TFT背板10上的阴极层20。
如图2所示阴极层20包括多个相互绝缘的触控引线202以及多个相互绝缘且呈矩阵形式排列的自电容电极201。该触控引线202延伸至OLED触控显示面板的非显示区B。
每一条触控引线202与一个自电容电极201相连接，并且与同一行自电容电极201相连接的多条触控引线202的电阻值均一致。
需要说明的是，上述“与同一行自电容电极201相连接的多条触控引线202的电阻值均一致”中的“一致”是指在设计和制作公差允许的范围内，与同一行自电容电极201相连接的多条触控引线202的电阻值相同或近似相同。
此外，为了节省布线空间且简化布线工艺，例如与同一行自电容电极201相连接的多条触控引线202相互平行设置。在此情况下，上述一行自电容电极201中“行(R)”的延伸方向和与该行自电容电极201相连接的多条触控引线202的延伸方向相同。
由上述可知，一方面，由于阴极层20包括多个相互绝缘且呈矩阵形式排列的自电容电极201，因此阴极层20可以与自电容电极201复用。即在该OLED触控显示面板处于显示阶段时，对阴极层20施加电压，以使得阴极层20与上述TFT背板10上的阳极形成电场，从而激发位于阴极层20和该OLED触控显示面板中的阳极之间的有机发光层进行发光。当该OLED触控显示面板处于触控阶段时，每一个上述自电容电极201通过与其相连接的触控引线202可以与位于非显示区B的如图3a所示的金属薄膜层13电连接，具体的，如图3b所示，触控 引线202通过透明导电薄膜层(例如图3b中的ITO所示，该透明导电薄膜层由诸如铟锡氧化物形成)与金属薄膜层13电连接。而该金属薄膜层13又连接接地端(GND)或者低电压端(VSS)，从而可以使得上述自电容电极201与接地端或者第电压端构成自电容。且当上述多个自电容电极201呈矩阵形式排列时，可以对N行和M列的自电容电极201进行扫描(即进行N+M次扫描)，以根据电容值发生变化的自电容所在的坐标确定出触控位置。这样一来，通过将阴极层20与自电容电极201复用可以实现如图3a所示的，结构简单的内嵌式触控(In Cell Touch)结构。从而无需采用如图4所示的在封装盖板15外侧设置多层薄膜触控结构16的方案，因此简化了OLED触控显示面板的结构。上述N和M为大于或等于2的正整数。
另一方面，图3a中的金属薄膜层13除了连接非显示区B的接地端或者第电压端以外，还与位于上述非显示区B的设置于FPC上的触控芯片14(Touch IC)相连接，用于将触控引线202采集到的信号输出至触控芯片14。在此情况下，由于与同一行自电容电极201相连接的多条触控引线202的电阻值均一致，因此与同一行自电容电极201相连接的多条触控引线202自身的电阻值对各个触控引线202向与其各自连接的自电容电极201输入的信号，以及向触控芯片14输出的采集信号的影响效果相同，从而通过对触控引线202进行等电阻设计，可以减小由于引线电阻差异导致的IR压降(IR-Drop)现象对该OLED触控显示面板的显示及触控性能的影响。
又一方面，当构成上述阴极层20的材料为金属材料，例如金属镁(Mg)和金属银(Ag)中的至少一种时，由于金属具有较好的延展性，因此，当上述OLED触控显示面板应用于柔性显示领域时，能够得到较好的弯折(Bending)效果，从而解决了在采用多层薄膜外嵌式的触控结构的情况下，由于该触控结构中的电极由透明导电材料构成而导致无法满足弯折要求的缺陷。
基于此，为了实现上述与同一行自电容电极201相连接的多条触控引线202的电阻值均一致，以下对自电容电极201以及触控引线202的设置方式进行说明。
具体的，如图5所示，为了使得与同一行自电容电极201相连接的多条触控引线202具有足够的布线空间。例如，将该OLED触控显 示面板的显示区A分为左半屏和右半屏。左半屏中与同一行自电容电极201相连接的多条触控引线202延伸至该OLED触控显示面板左半部分的非显示区B；右半屏中与同一行自电容电极201相连接的多条触控引线202延伸至该OLED触控显示面板右半部分的非显示区B。
需要说明的是，本申请中，“左”和“右”等方位术语是相对于附图中的OLED触控显示面板示意置放的方位来定义的。应当理解到，这些方向性术语是相对的概念，它们用于相对于的描述和澄清，其可以根据OLED触控显示面板所放置的方位的变化而相应地发生变化。
基于此，该OLED触控显示面板的左半部分从左至右，与第一列C1和第二列C2自电容电极201相连接的触控引线202的宽度W长度L别相同。此外，除了第一列C1自电容电极201以外，与其余列自电容电极201相连接的触控引线202长度L和宽度W依次增加。
此外，上述OLED触控显示面板左右半部分从右至左，与第一列C1’和第二列C2’自电容电极201相连接的触控引线202的宽度W、长度L分别相同。此外，除了第一列C1’自电容电极201以外，与其余列自电容电极201相连接的触控引线202长度L和宽度W依次增加。
由上述可知，该OLED触控显示面板的左半部分从左至右或者，该OLED触控显示面板左右半部分从右至左，与第一列C1自电容电极201相连接的触控引线202的宽度W1和与第二列C2的自电容电极201相连接的触控引线202的宽度W2相同。上述触控引线202的宽度为该触控引线202的线宽。并且，与第一列C1自电容电极201相连接的触控引线202的长度L1和与第二列C2的自电容电极201相连接的触控引线202的长度L2相同。上述触控引线202的长度与该行自电容电极201的延伸方向相同。
此外，该OLED触控显示面板的左半部分从左至右或者，该OLED触控显示面板左右半部分从右至左，除了第一列C1自电容电极201以外，与其余列自电容电极201相连接的触控引线202长度L和宽度W依次增加。
具体的，以该OLED触控显示面板的左半部分中位于第一行的相邻三个自电容电极TX1、TX2以及TX3为例，与TX1、TX2以及TX3分别相连接的三条触控引线202的宽度W1、W2以及W3之间的关系为：W1＝W2＝M×W3；其中，0＜M＜1，M为正数，例如M可以为0.5。
此外，与TX1、TX2以及TX3分别相连接的三条触控引线202的长度L1、L2以及L3之间的关系为：L1＝L＝M×L3。
在此情况下，由于触控引线202的电阻值与其宽度W成正比，长度L成反比。因此，当与电容电极TX1、TX2以及TX3分别相连的三条触控引线202的长度L和宽度W均以此递增时，上述三条触控引线202的阻值可以保持相同或近似相同，从而实现等电阻设计。这样一来，能够降低由引线电阻差异导致的IR压降(IR-Drop)现象对该OLED触控显示面板的显示及触控性能的影响。
当然，上述举例说明仅仅是针对自电容电极TX1、TX2以及TX3的长度和宽度的设置方式进行的举例说明。当OLED触控显示面板的左半部分或右半部分包括三列以上的自电容电极201时，与同一行自电容电极201相连接的触控引线202的长度和宽度，随着自电容电极201在OLED触控显示面板的左半部分或右半部分所在列数的增加而增加。例如，对于左半屏或右半屏中的任意半屏而言，与同一行自电容电极201相连接的多条触控引线202的长度和宽度以等差数列的形式逐渐增加，从而易于实现上述等电阻设计。
在此情况下，当与同一行自电容电极201相连接的所有触控引线202的宽度之和太大时，在触控的过程中，手指的按压位置会与多条触控引线202的位置相对应，而不是与某一个自电容电极201的位置基本对应。这样一来，将无法判断出触控位置与哪个自电容电极201的位置相对应，从而产生触控盲区，降低用户体体验。
为了解决上述问题，例如，OLED触控显示面板的左半部分或右半部分中的任意一部分中，与同一行的自电容电极201相连接的触控引线202的宽度之和小于或等于该行中面积最大的自电容电极201宽度的10％。
上述触控引线202的宽度方向和自电容电极201宽度方向均与触控引线202的延伸方向垂直。
这样一来，可以有效的控制，当与同一行自电容电极201相连接的所有触控引线202的宽度之和，使得触控过程中任意按压位置均能够与某一个自电容电极201的位置基本对应，从而有利于减小触控盲区，提高触控精度。
在此基础上，为了进一步提高显示亮度的均一性，在一实施例中， 上述自电容电极201为矩形，例如正方形。该OLED触控显示面板左半部分从左至右，上述自电容电极201的面积逐渐增大。此外，OLED触控显示面板右半部分从右至左，上述自电容电极201的面积逐渐增大。这样一来，通过将OLED触控显示面板左半屏和右半屏的自电容电极201的面积进行渐进式递增，从而在显示过程中，当上述多个自电容电极201作为阴极层20进行充电时，充入电量的大小也会渐进式递增。在此情况下，人眼不会发现相邻两个自电容电极201之间存在的细微电量差异，从而使得OLED触控显示面板的显示亮度能够保持均一。并且申请人在多次对OLED触控显示面板进行点灯效果测试的过程中，发现该OLED触控显示面板显示画面(例如条纹画面)时的亮度均一性良好。
需要说明的是，本申请对OLED触控显示面板的分辨率不做限定，当分辨率增加后，自电容电极201以及触控引线202仍然可以采用上述设置方式。基于此，当分辨率增加后，为了在降低IR压降(IR-Drop)现象的同时，可以增加OLED触控显示面板左半屏或右半屏中，与靠近该OLED触控显示面板中心位置的部分自电容电极201相连接的触控引线202的布线空间。在一实施例中，OLED触控显示面板左半屏或右半屏中，与上述第一列C1(或C1’)和第二列C2(或C2’)自电容电极201相连接的触控引线202的宽度要尽可能的小。
为了达到上述目的，OLED触控显示面板左半部分从左至右，与第一列C1和第二列C2自电容电极201相连接的触控引线202的宽度与该OLED触控显示面板的一个亚像素的宽度相同。
可替换地，OLED触控显示面板左右半部分从右至左，与第一列C1’和第二列C2’自电容电极201相连接的触控引线202的宽度与该OLED触控显示面板的一个亚像素的宽度相同。
基于此，为了形成上述能够与阴极层20复用的多个自电容电极201以及与各个自电容电极201相连接的触控引线202。在一实施例中，上述OLED触控显示面板还包括设置于如图6所示的TFT背板10上的多个如图7所示的L型挡墙以及多个与上述L型挡墙11的水平边平行的条状挡墙11’。此外，OLED触控显示面板左半部分从左至右，或者右边部分从右至左，多个L型挡墙11的尺寸依次增大。
具体的，相邻的两个L型挡墙11的竖直边分别与一个条状挡墙11’ 的两端相连接。相邻的两个L型挡墙11的竖直边和一条状挡墙11’限定出一个触控区101。此外，相邻的两个L型挡墙的水平边限定出与该触控区101相连接的引线区102。
基于此，在一实施例中，上述OLED触控显示面板左半部分从左至右，或者右边部分从右至左，用于限定第一列C1(或C1’)触控区101的相邻两个L型挡墙11的开口方向相对设置。图8为图7中位于第一列C1(或C1’)的触控区101的形状放大示意图。此外，其余列的相邻两个L型挡墙11的开口方向相同，图9为图7中位于第二列C2(或C2’)以及该第二列C2(或C2’)之后的触控区101的形状放大示意图。
在此基础上，除了第一行C1(或C1’)触控区以外，用于限定上一行触控区101的L型挡墙11的水平边与用于限定下一行触控区101的条状挡墙11’共用。
需要说明的是，上述L型挡墙11的水平边与上述触控引线202的延伸方向相同，此外，L型挡墙11的竖直边与上述触控引线202的延伸方向垂直。
在此情况下，上述L型挡墙11和条状挡墙11’用于将阴极层20，如图10所示，分隔出位于上述触控区101内的自电容电极201以及位于引线区102内的触控引线202。
综上所述，一方面，OLED触控显示面板左半部分从左至右，或者右边部分从右至左，通过将多个L型挡墙11的尺寸依次增大，并且将用于限定第一列C1(或C1’)触控区101的相邻两个L型挡墙11的开口方向相对设置，其余列的相邻两个L型挡墙11的开口方向相同，可以使得采用上述L型挡墙11和条状挡墙11’对阴极层20进行分割形成的多个自电容电极201中，除了第一列C1自电容电极201以外，与其余列自电容电极201相连接的触控引线202长度L和宽度W依次增加，并且OLED触控显示面板左半屏和右半屏的自电容电极201的面积进行渐进式递增，从而有利于实现上述触控引线的等电阻设计，并提高显示亮度的均一性。
此外，另一方面，上述挡墙还可以对OLED触控显示面板中的封装盖板进行支撑，以使得该OLED触控显示面板的表面平整。
在此基础上，为了避免对显示效果造成影响，例如上述OLED触 控显示面板还包括如图7所示的设置于TFT背板10上的像素定义层30。该像素定义层30包括横纵交叉的像素分隔物301，以及由像素分隔物301围设的开口302。
上述L型挡墙11和条状挡墙11’(图6中未示出)位于该像素分隔物301背离TFT背板10的一侧。
这样一来，由于开口位置302对应每个亚像素的有效显示区，而像素分隔物301位于非显示区，因此当将上述挡墙11设置于像素分隔物301背离TFT背板10的一侧时，可以避免挡墙11对上述有效显示区的遮挡，从而能够降低对显示效果的影响。
在此基础上，为了实现通过上述L型挡墙11和条状挡墙11’对阴极层20进行切割，例如，上述L型挡墙11和条状挡墙11’的纵截面形状为如图6所示倒梯形。上述纵截面垂直于该TFT背板10。这样一来，当在形成有上述L型挡墙11和条状挡墙11’的基板上形成阴极层20，例如采用蒸镀工艺形成MgAg合金薄膜层时，在上述L型挡墙11和条状挡墙11’长边与侧边之间的夹角的切割作用下，可以将阴极层20断开，以在L型挡墙11和条状挡墙11’限定的触控区101内形成上述自电容电极201，在相邻两个L型挡墙11的水平边限定出的引线区102内形成上述触控引线202。
需要说明的是，本申请提供的OLED触控显示面板中的封装盖板15可以为盖板玻璃或者为封装薄膜层。在此基础上，为了提高对封装盖板15的制成效果，进一步提升OLED触控显示面板表面的平整度。在一实施例中，该OLED触控显示面板还包括如图11所示的，位于上述触控区101内形成多个隔垫物110。当该OLED触控显示面板包括上述像素定义层30时。该隔垫物110可以位于该像素定义层30的像素分隔物301背离TFT背板10的一侧。
由于上述隔垫物110设置于触控区101内，因此隔垫物110与挡墙11的位置不重叠。
基于此，为了简化制作工艺，并形成上述纵截面为倒梯形的L型挡墙11和条状挡墙11’。例如，L型挡墙11和条状挡墙11’与隔垫物110同层同材料。此外且构成所述L型挡墙11和条状挡墙11’的材料为负性光刻胶。在此情况下，通过一次掩膜曝光(MASK)工艺形成的隔垫物110、L型挡墙11以及条状挡墙11’的纵向截面的形状均为上述 倒梯形。
此外，当在形成有上述隔垫物110、L型挡墙11以及条状挡墙11’的基板上形成阴极层20，例如采用蒸镀工艺形成MgAg合金薄膜层时，在隔垫物110、L型挡墙11以及条状挡墙11’长边与侧边之间的夹角的切割作用下，可以将阴极层20断开，此时隔垫物110L型挡墙11以及条状挡墙11’的表面具有悬浮(Floating)的薄膜层，由于该薄膜层呈孤岛状，因此对OLED触控显示面板的影响较小。
在此基础上，为了进一步减小自电容电极201与TFT背板10上其他电极之间产生的寄生电容，可以在上述触控区101内增加隔垫物110的设置数量，并优化该隔垫物110的排布方式。
具体的，上述隔垫物110，如图12所示，包括多个第一子隔垫物110a和多个第二子隔垫物110b。
多个第一子隔垫物110a呈矩阵形式排列。第二子隔垫物110b位于相邻两行和相邻两列第一子隔垫物110a之间。第一子隔垫物110a的延伸方向与第二子隔垫物110b的延伸方向垂直。这样一来，可以进一步增加触控区101内处于浮空状态的的薄膜层，使得自电容电极202的面积进一步减小。
基于OLED触控显示面板制作工艺流程，当位于像素定义层30的像素分隔物301上的隔垫物110和、L型挡墙11以及条状挡墙11’制作完成后，在制作阴极层20之前，该OLED触控显示面板的制作方法还包括至少在像素定义层30的开口内形成有机材料功能层。
以下对上述有机材料功能层的具体结构进行举例说明。
例如，如图13所示，有机材料功能层包括依次位于TFT背板10靠近阴极层20一侧的空穴注入层(HI)401、空穴传输层(HT)402、用于调节微腔高度的衬垫层405、用于提高空穴的传输效率得缓冲层(HTEB)406、有机发光层有机发光层(EML)403以及电子传输层电子传输层(ET)404。
空穴注入层401、空穴传输层402、缓冲层406以及电子传输层404完全覆盖TFT背板10的显示。有机发光层403和衬垫层405与开口302的位置相对应。
具体的，空穴注入层401和空穴传输层402的厚度分别为
Figure PCTCN2018070077-appb-000001
和
Figure PCTCN2018070077-appb-000002
该缓冲层406的厚度可以为
Figure PCTCN2018070077-appb-000003
电子传输层404的厚度为
Figure PCTCN2018070077-appb-000004
该构成该有机发光层403的材料不同时，在阳极和阴极层20的形成的电场激发作用下，可以发出不同的光线，例如红光(R)、绿光(G)以及蓝光(B)。红色(R)有机发光层403和绿色(G)有机发光层40以及蓝色(B)有机发光层403的厚度分别为
Figure PCTCN2018070077-appb-000005
此外，图4是以分别对红色(R)有机发光层403和绿色(G)有机发光层40所在的微腔高度进行调节为例进行的说明。当需要对蓝色(B)有机发光层403所在的微腔高度进行调节时，也可以在蓝色(B)有机发光层403所在的微腔对应的开口位置形成上述衬垫层405。具体的，对红色(R)有机发光层403和绿色(G)有机发光层40所在的微腔高度进行调节衬垫层405的厚度分别为
Figure PCTCN2018070077-appb-000006
由上述可知，对于具有上述结构的有机材料功能层而言，只有有机发光层403和衬垫层405与开口302的位置相对应，其余薄膜层均完全覆盖TFT背板10的显示区。因此可以采用精细化掩膜板(FMM)制作有机发光层403和衬垫层405。其余薄膜层采用普通掩膜版即可。从而可以减少采用FMM的数量，降低制作成本。
可替换地，在制作成本允许的情况下，如图14所示，上述有机材料功能层的结构包括依次位于TFT背板10靠近阴极层20一侧，并且与开口302的位置相对应的空穴注入层401、空穴传输层402、衬垫层405、缓冲层406、有机发光层403以及电子传输层404。
综上所述，由于本申请中，如图10所示，触控引线202与自电容电极201为同层结构，所以无论每个OLED器件的自身结构是否独立，上述触控引线202均可以向自电容电极201传输信号，从而使得各个OLED器件能够正常工作。因此上述图13与图14提供的两种有机材料功能层的结构对于本方案均适用。当然，为了简化制作工艺和节省成本，例如采用图13所示的制作方法。
在此基础上，当上述有机材料功能层制作完后，可以制作上述阴极层20，阴极层20的厚度可以为
Figure PCTCN2018070077-appb-000007
此外还可以在阴极层20的表面形成覆盖层(Capping)407，以提高阴极层20的电学性能。该覆盖层407的厚度可以为
Figure PCTCN2018070077-appb-000008
本公开实施例提供一种触控显示装置，包括如上所述的OLED触控显示面板，具有与前述实施例提供的OLED触控显示面板相同的有 益效果。
此外，如图3a所示，该触控显示装置还包括设置于OLED触控显示面板非显示区的FPC、触控芯片14和以及显示驱动芯片17等驱动部件或驱动电路。
需要说明的是，在本申请中，触控显示装置可以为电视、数码相框、手机或平板电脑等任何具有显示功能的产品或者部件。
本公开提供一种OLED触控显示面板和触控显示装置。该OLED触控显示面板包括TFT背板以及设置于TFT背板上的阴极层。阴极层包括多个相互绝缘的触控引线以及多个相互绝缘且呈矩阵形式排列的自电容电极。触控引线延伸至OLED触控显示面板的非显示区。每一条触控引线与一个自电容电极相连接，并且与同一行所述自电容电极相连接的多条触控引线的电阻值均一致。
一方面，由于阴极层包括多个相互绝缘且呈矩阵形式排列的自电容电极，因此阴极层可以与自电容电极复用。即在该OLED触控显示面板处于显示阶段时，对阴极层施加电压，以使得阴极层与上述TFT背板上的阳极形成电场，从而激发位于阴极层和该OLED触控显示面板中的阳极之间的有机发光层进行发光。当该OLED触控显示面板处于触控阶段时，每一个上述自电容电极通过与其相连接的触控引线可以与位于非显示区的金属薄膜层电连接。而该金属薄膜层又连接接地端或者低电压端，从而可以使得上述自电容电极与接地端或者第电压端构成自电容。且当上述多个自电容电极呈矩阵形式排列时，可以对N行和M列的自电容电极进行扫描，以根据电容值发生变化的自电容所在的坐标确定出触控位置。这样一来，通过将阴极层与自电容电极复用可以实现结构简单的内嵌式触控结构。从而无需采用在封装盖板外侧设置多层薄膜触控结构的方案，因此简化了OLED触控显示面板的结构。
另一方面，金属薄膜层除了连接非显示区的接地端或者第电压端以外，还与位于上述非显示区的设置于FPC上的触控芯片相连接，用于将触控引线采集到的信号输出至触控芯片。在此情况下，由于与同一行自电容电极相连接的多条触控引线的电阻值均一致，因此与同一行自电容电极相连接的多条触控引线自身的电阻值对各个触控引线向与其各自连接的自电容电极输入的信号，以及向触控芯片输出的采集 信号的影响效果相同，从而通过对触控引线进行等电阻设计，可以减小由于引线电阻差异导致的IR压降现象对该OLED触控显示面板的显示及触控性能的影响。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (19)

  1. 一种OLED触控显示面板，包括TFT背板以及设置于所述TFT背板上的阴极层，
    其中所述阴极层包括多个相互绝缘的触控引线以及多个相互绝缘且呈矩阵形式排列的自电容电极，并且所述触控引线延伸至所述OLED触控显示面板的非显示区；以及
    其中每一条触控引线与一个自电容电极相连接，并且与同一行所述自电容电极相连接的多条触控引线的电阻值均一致。
  2. 根据权利要求1所述的OLED触控显示面板，其中所述OLED触控显示面板左半部分从左至右，与第一列和第二列自电容电极相连接的触控引线的宽度、长度分别相同；并且除了第一列自电容电极以外，与其余列所述自电容电极相连接的触控引线长度和宽度依次增加；以及
    其中所述OLED触控显示面板左右半部分从右至左，与第一列和第二列自电容电极相连接的触控引线的宽度、长度分别相同；并且除了第一列自电容电极以外，与其余列所述自电容电极相连接的触控引线长度和宽度依次增加。
  3. 根据权利要求1或2所述的OLED触控显示面板，其中所述自电容电极为矩形；
    其中所述OLED触控显示面板左半部分从左至右，所述自电容电极的面积逐渐增大；以及
    其中所述OLED触控显示面板右半部分从右至左，所述自电容电极的面积逐渐增大。
  4. 根据权利要求3所述的OLED触控显示面板，其中所述OLED触控显示面板的左半部分或右半部分中的任意一部分中，与同一行的自电容电极相连接的触控引线的宽度之和小于或等于该行中面积最大的自电容电极宽度的10％；以及
    其中所述触控引线的宽度方向和所述自电容电极的宽度方向均与所述触控引线的延伸方向垂直。
  5. 根据权利要求4所述的OLED触控显示面板，其中所述OLED触控显示面板左半部分从左至右，与第一列和第二列自电容电极相连 接的触控引线的宽度与所述OLED触控显示面板的一个亚像素的宽度相同。
  6. 根据权利要求4或5所述的OLED触控显示面板，其中所述OLED触控显示面板左右半部分从右至左，与第一列和第二列自电容电极相连接的触控引线的宽度与所述OLED触控显示面板的一个亚像素的宽度相同。
  7. 根据权利要求1所述的OLED触控显示面板，还包括设置于所述TFT背板上的多个L型挡墙以及多个与所述L型挡墙的水平边平行的条状挡墙，其中所述OLED触控显示面板左半部分从左至右，或者右边部分从右至左，多个L型挡墙的尺寸依次增大。
  8. 根据权利要求7所述的OLED触控显示面板，其中相邻的两个L型挡墙的竖直边分别与一个条状挡墙的两端相连接，所述相邻的两个L型挡墙的竖直边和一所述条状挡墙限定出一个触控区，并且所述相邻的两个L型挡墙的水平边限定出与该触控区相连接的引线区。
  9. 根据权利要求8所述的OLED触控显示面板，其中所述L型挡墙和所述条状挡墙将所述阴极层分隔出位于所述触控区内的所述自电容电极以及位于所述引线区内的所述触控引线。
  10. 根据权利要求7所述的OLED触控显示面板，其中所述OLED触控显示面板左半部分从左至右，或者右边部分从右至左，用于限定第一列触控区的相邻两个L型挡墙的开口方向相对设置，并且其余列的相邻两个L型挡墙的开口方向相同。
  11. 根据权利要求10所述的OLED触控显示面板，其中除了第一行触控区以外，用于限定上一行触控区的L型挡墙的水平边与用于限定下一行触控区的条状挡墙共用。
  12. 根据权利要求7所述的OLED触控显示面板，还包括设置于所述TFT背板上的像素定义层，其中所述像素定义层包括横纵交叉的像素分隔物，以及由所述像素分隔物围设的开口；以及
    其中所述L型挡墙和所述条状挡墙位于所述像素分隔物背离所述TFT背板的一侧。
  13. 根据权利要求7-12中任一项所述的OLED触控显示面板，其中所述L型挡墙和所述条状挡墙的纵截面形状为倒梯形，并且所述纵截面垂直于所述TFT背板。
  14. 根据权利要求7所述的OLED触控显示面板，还包括设置于所述TFT背板上位于所述触控区内的隔垫物，其中所述L型挡墙和所述条状挡墙与所述隔垫物同层同材料，并且所述L型挡墙和所述条状挡墙由负性光刻胶形成。
  15. 根据权利要求14所述的OLED触控显示面板，其中所述隔垫物包括多个第一子隔垫物和多个第二子隔垫物；
    其中所述多个第一子隔垫物呈矩阵形式排列，并且所述第二子隔垫物位于相邻两行和相邻两列第一子隔垫物之间；以及
    其中所述第一子隔垫物的延伸方向与所述第二子隔垫物的延伸方向垂直。
  16. 根据权利要求12所述的OLED触控显示面板，还包括有机材料功能层，所述有机材料功能层包括依次位于所述TFT背板靠近所述阴极层一侧的空穴注入层、空穴传输层、衬垫层、缓冲层、有机发光层以及电子传输层；
    其中所述空穴注入层、所述空穴传输层、所述缓冲层以及所述电子传输层完全覆盖所述TFT背板的显示区，并且所述有机发光层和所述衬垫层与所述开口的位置相对应。
  17. 根据权利要求12所述的OLED触控显示面板，还包括有机材料功能层，所述有机材料功能层包括依次位于所述TFT背板靠近所述阴极层一侧，并且与所述开口的位置相对应的空穴注入层、空穴传输层、衬垫层、缓冲层、有机发光层以及电子传输层。
  18. 根据权利要求1所述的OLED触控显示面板，其中所述阴极层包括金属镁和金属银中的至少一种。
  19. 一种触控显示装置，包括如权利要求1-18中任一项所述的OLED触控显示面板。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3674858A3 (en) * 2018-12-28 2020-08-26 LG Display Co., Ltd. Touch display device
CN112885886A (zh) * 2021-02-08 2021-06-01 维沃移动通信有限公司 显示屏、显示屏的制作方法和电子设备

Families Citing this family (26)

* Cited by examiner, † Cited by third party
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CN107123621A (zh) 2017-05-10 2017-09-01 京东方科技集团股份有限公司 一种oled触控显示面板及其制作方法、触控显示装置
CN107168574A (zh) 2017-05-10 2017-09-15 京东方科技集团股份有限公司 一种oled触控显示面板、触控显示装置
KR102487508B1 (ko) * 2017-08-15 2023-01-10 애플 인크. 자가 커패시턴스 및 상호 커패시턴스 하이브리드 터치 센서 패널 아키텍처
CN109558025B (zh) * 2017-09-27 2024-04-02 京东方科技集团股份有限公司 一种触控面板、其制作方法及显示装置
CN108389878B (zh) * 2017-09-30 2022-01-25 昆山国显光电有限公司 显示屏及显示装置
CN107887422B (zh) * 2017-10-31 2020-12-25 昆山国显光电有限公司 有机电致发光器件、显示器及移动通信设备
CN107967085B (zh) * 2017-11-22 2021-04-30 武汉天马微电子有限公司 显示装置
CN109920816B (zh) * 2017-12-12 2021-03-30 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
CN108269837B (zh) * 2018-01-23 2020-12-04 京东方科技集团股份有限公司 一种电致发光显示面板、掩膜板及制作方法
CN108279803A (zh) * 2018-01-24 2018-07-13 厦门凌阳华芯科技有限公司 一种触控显示面板及显示装置
CN108336116B (zh) * 2018-02-08 2022-03-08 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示装置
CN108388375B (zh) * 2018-03-01 2021-10-22 京东方科技集团股份有限公司 一种触控传感器和触控显示装置
CN108493220B (zh) * 2018-04-12 2021-02-05 京东方科技集团股份有限公司 一种显示面板及其制备方法、显示装置
CN110568950B (zh) * 2018-06-05 2023-08-01 鸿富锦精密工业（深圳）有限公司 Tft基板及触控显示面板
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CN110165069A (zh) * 2018-06-28 2019-08-23 京东方科技集团股份有限公司 一种oled显示基板、显示面板及显示装置
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JP7258530B2 (ja) * 2018-12-10 2023-04-17 株式会社ジャパンディスプレイ 表示装置
CN110520832A (zh) * 2019-07-10 2019-11-29 京东方科技集团股份有限公司 触控微发光二极管显示装置、操作触控微发光二极管显示装置的方法，以及制造触控微发光二极管显示装置的方法
CN110690359B (zh) * 2019-09-06 2021-03-23 武汉华星光电半导体显示技术有限公司 显示面板和电子设备
CN111857412B (zh) * 2020-06-30 2022-07-26 武汉天马微电子有限公司 一种显示面板和显示装置
CN113050838B (zh) * 2021-04-26 2023-11-28 武汉天马微电子有限公司 触控显示面板及触控显示装置
CN113655905B (zh) * 2021-08-11 2023-11-28 武汉华星光电半导体显示技术有限公司 触控面板和移动终端
CN114911376A (zh) * 2022-05-31 2022-08-16 武汉天马微电子有限公司 一种触控面板和触控显示装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110242027A1 (en) * 2010-04-02 2011-10-06 Arolltech Co., Ltd. Display with in-cell touch sensor
CN104793820A (zh) * 2015-03-31 2015-07-22 深圳市华星光电技术有限公司 自电容式触摸屏结构、内嵌式触摸屏以及液晶显示器
CN104952888A (zh) * 2015-07-20 2015-09-30 合肥鑫晟光电科技有限公司 显示用基板的***电路、显示用基板和显示装置
CN205121533U (zh) * 2015-11-20 2016-03-30 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN205193765U (zh) * 2015-12-08 2016-04-27 上海中航光电子有限公司 阵列基板、触控显示面板
CN106066740A (zh) * 2016-08-02 2016-11-02 厦门天马微电子有限公司 触控显示面板和触控显示装置
CN106371666A (zh) * 2016-08-31 2017-02-01 厦门天马微电子有限公司 显示面板与触控显示装置
CN206039474U (zh) * 2016-08-02 2017-03-22 厦门天马微电子有限公司 触控显示面板和触控显示装置
CN106560779A (zh) * 2015-10-05 2017-04-12 G2触控股份有限公司 触摸屏面板
CN107168574A (zh) * 2017-05-10 2017-09-15 京东方科技集团股份有限公司 一种oled触控显示面板、触控显示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI521414B (zh) * 2010-10-18 2016-02-11 Gunze Kk Touch switch
CN103164093A (zh) * 2011-12-19 2013-06-19 禾瑞亚科技股份有限公司 一种电容式触摸屏
TWM472204U (zh) * 2013-08-07 2014-02-11 Superc Touch Corp 內嵌顯示觸控結構
US10133421B2 (en) * 2014-04-02 2018-11-20 Synaptics Incorporated Display stackups for matrix sensor
JP2016072127A (ja) * 2014-09-30 2016-05-09 ソニー株式会社 有機ｅｌ表示装置およびその製造方法、並びに電子機器
TWI580090B (zh) * 2015-07-20 2017-04-21 瑞鼎科技股份有限公司 內嵌式觸控面板

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110242027A1 (en) * 2010-04-02 2011-10-06 Arolltech Co., Ltd. Display with in-cell touch sensor
CN104793820A (zh) * 2015-03-31 2015-07-22 深圳市华星光电技术有限公司 自电容式触摸屏结构、内嵌式触摸屏以及液晶显示器
CN104952888A (zh) * 2015-07-20 2015-09-30 合肥鑫晟光电科技有限公司 显示用基板的***电路、显示用基板和显示装置
CN106560779A (zh) * 2015-10-05 2017-04-12 G2触控股份有限公司 触摸屏面板
CN205121533U (zh) * 2015-11-20 2016-03-30 京东方科技集团股份有限公司 一种内嵌式触摸屏及显示装置
CN205193765U (zh) * 2015-12-08 2016-04-27 上海中航光电子有限公司 阵列基板、触控显示面板
CN106066740A (zh) * 2016-08-02 2016-11-02 厦门天马微电子有限公司 触控显示面板和触控显示装置
CN206039474U (zh) * 2016-08-02 2017-03-22 厦门天马微电子有限公司 触控显示面板和触控显示装置
CN106371666A (zh) * 2016-08-31 2017-02-01 厦门天马微电子有限公司 显示面板与触控显示装置
CN107168574A (zh) * 2017-05-10 2017-09-15 京东方科技集团股份有限公司 一种oled触控显示面板、触控显示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3674858A3 (en) * 2018-12-28 2020-08-26 LG Display Co., Ltd. Touch display device
US11315986B2 (en) 2018-12-28 2022-04-26 Lg Display Co., Ltd. Touch display device
CN112885886A (zh) * 2021-02-08 2021-06-01 维沃移动通信有限公司 显示屏、显示屏的制作方法和电子设备

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