WO2018098980A1 - 一种等离子体聚合涂层装置 - Google Patents

一种等离子体聚合涂层装置 Download PDF

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Publication number
WO2018098980A1
WO2018098980A1 PCT/CN2017/081773 CN2017081773W WO2018098980A1 WO 2018098980 A1 WO2018098980 A1 WO 2018098980A1 CN 2017081773 W CN2017081773 W CN 2017081773W WO 2018098980 A1 WO2018098980 A1 WO 2018098980A1
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WIPO (PCT)
Prior art keywords
vacuum chamber
wall
discharge
chamber
porous electrode
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Application number
PCT/CN2017/081773
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English (en)
French (fr)
Inventor
宗坚
Original Assignee
江苏菲沃泰纳米科技有限公司
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Filing date
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Application filed by 江苏菲沃泰纳米科技有限公司 filed Critical 江苏菲沃泰纳米科技有限公司
Priority to BR112019005796-0A priority Critical patent/BR112019005796B1/pt
Priority to EP17876726.5A priority patent/EP3539676B1/en
Priority to KR1020197014395A priority patent/KR102175721B1/ko
Priority to JP2019527143A priority patent/JP6990704B2/ja
Priority to US15/890,476 priority patent/US10424465B2/en
Publication of WO2018098980A1 publication Critical patent/WO2018098980A1/zh
Priority to US16/195,537 priority patent/US11339477B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/12—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to conditions of ambient medium or target, e.g. humidity, temperature position or movement of the target relative to the spray apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B16/00—Spray booths
    • B05B16/40—Construction elements specially adapted therefor, e.g. floors, walls or ceilings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/053—Arrangements for supplying power, e.g. charging power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/142—Pretreatment
    • B05D3/144—Pretreatment of polymeric substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32596—Hollow cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/32779—Continuous moving of batches of workpieces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20214—Rotation
    • H—ELECTRICITY
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    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Definitions

  • the invention belongs to the technical field of plasma engineering and relates to a plasma coating device.
  • Plasma polymer coating treatment is an important a surface treatment method in which a substrate to be treated is placed in a vacuum chamber, and a process gas and a gaseous organic monomer are introduced under vacuum.
  • the discharge plasmaizes the organic gaseous monomer to produce various active species, and the addition reaction between the active species or the active species and the monomer forms a polymer film on the surface of the substrate. .
  • nanoscale plasma The polymeric coating has excellent properties. However, due to the thin film layer of the nano-polymer coating, it has high requirements on the uniformity of the coating.
  • the existing plasma nano-coating device adopts a square vacuum chamber, and the position of the fixture and the substrate placed thereon in the vacuum chamber is fixed during the coating process, because different substrates of the same batch are in vacuum Different positions in the room and electrodes, single / The difference in the distance between the carrier gas outlet, the vacuum vent, and the like inevitably results in a difference in coating uniformity.
  • the existing plasma nano-coating device can only adopt a vacuum chamber with a smaller volume and a smaller single-treatment batch, which greatly reduces the processing efficiency and increases the processing efficiency. cost. Even so, it still does not achieve satisfactory batch uniformity.
  • processing demand and batches have increased dramatically, solving the current small-scale, low-efficiency, high-cost, batch-uniformity of existing plasma nano-coating processing. The poor question is very realistic and urgent.
  • the technical problem to be solved by the present invention is to provide a plasma nano-coating device to solve the problem that the prior plasma nano-coating device adopts a small rectangular chamber with small volume, small single-processing batch, low processing efficiency, high cost, and batch. Handling problems with poor uniformity.
  • a plasma polymerization coating device comprising a vacuum chamber, characterized in that: Any one of the cross-sections of the inner wall of the chamber of the vacuum chamber is a circle of the same diameter or a regular polygon of the same side length, and the number of sides of the regular polygon is at least 6 sides;
  • a porous electrode is disposed in the vacuum chamber near the inner wall of the vacuum chamber, and the porous electrode is a porous arc surface structure spaced apart from the inner wall of the vacuum chamber.
  • the porous electrode is connected to the high frequency power source, and the power of the high frequency power source is 15- 1000W
  • the porous electrode is powered by a high-frequency power source, and a plasma is generated during discharge for surface cleaning and pretreatment of the substrate;
  • At least two discharge chambers are sealingly mounted on the outer wall of the vacuum chamber; the porous electrodes and the discharge chambers may be collectively discharged according to the process requirements or separately discharged.
  • the porous electrode generates plasma for cleaning, that is, surface cleaning: the porous electrode has a large power and continuous discharge to generate a strong plasma, and is used for cleaning organic substances such as water vapor and oil stain on the surface of the substrate before coating, and can also activate the organic base.
  • the material forms a dangling bond on the surface to facilitate the deposition of the coating and enhance the bonding force between the substrate and the coating.
  • the porous electrode does not work during the coating process;
  • the discharge chamber generates plasma for polymerization: a small power discharge in each discharge chamber during the coating process produces a weak plasma, which is controlled by a metal grid to intermittently release into the vacuum chamber to initiate polymerization of the monomer and deposit on the surface of the substrate to form a coating.
  • a metal grid to intermittently release into the vacuum chamber to initiate polymerization of the monomer and deposit on the surface of the substrate to form a coating.
  • At least two metal grids are disposed at the junction of the discharge chamber and the inner wall of the vacuum chamber.
  • the metal grid is insulated from the inner wall of the vacuum chamber, and the metal grid is connected to the pulse power source.
  • the function of the pulse power source is to apply a positive pulse on the metal grid.
  • the bias voltage intermittently releases the plasma in the discharge chamber into the vacuum chamber, wherein the plasma is blocked by the multilayer metal grid in the discharge chamber during the pulse off period, and the plasma passes through the multilayer metal grid into the vacuum chamber during the pulse application. The polymerization of the monomer vapor in the vacuum chamber is initiated.
  • the discharge chamber is provided with a discharge source, the discharge source is connected to the power supply, the discharge chamber is connected with a carrier gas pipeline, the other end of the carrier gas pipeline is connected to the carrier gas source, and the monomer vapor pipeline is connected to the vacuum chamber, and The outlet is located in front of the discharge chamber, and the other end of the monomer vapor line is connected to the monomer steam source;
  • An exhaust gas collecting pipe is vertically installed on a central axis of the vacuum chamber, and one end of the exhaust gas collecting pipe extends out of the vacuum chamber and is connected to a vacuum pump, and a hole is formed in the pipe wall of the exhaust gas collecting pipe;
  • the vacuum chamber is provided with a rotating rack, the rotating shaft of the rotating rack is coaxial with the central axis of the vacuum chamber, and the substrate to be processed is placed on the rotating rack.
  • top and bottom covers of the vacuum chamber are flat or spherical, ortho-polygonal, elliptical, or the like arched structures that match the cross-section of the inner wall of the side chamber of the vacuum chamber.
  • the porous electrode is in the shape of a cylinder or at least divided into two cylindrical arcuate shapes, and the porous electrode is coaxial with the vacuum chamber, and the distance from the inner wall of the vacuum chamber is 1-6 cm, the porous electrode is covered with through holes, the pore diameter is 2-30 mm, and the hole spacing is 2-30 mm.
  • the discharge chamber is cylindrical and made of aluminum, carbon steel or stainless steel with a diameter of 5-20 cm and a depth of 3-15 cm.
  • the spacing between adjacent discharge chamber axes is 7-40 cm.
  • the number of metal grid layers is 2-6 layers, the material is stainless steel or nickel, and the mesh size is 100-1000 mesh, and the transmittance is 25%-40%.
  • the pulse power supply outputs a positive pulse, and the parameters are: peak 20-140V, pulse width 2 ⁇ s-1ms, repetition frequency 20Hz-10kHz.
  • the discharge source is a filament or an electrode or an induction coil or a microwave antenna, and has a discharge power of 2-500W.
  • the distance between the outlet of the monomer vapor line and the discharge chamber is 1-10 cm.
  • the exhaust gas collecting pipe has an inner diameter of 25-100 mm, and the pipe wall is evenly opened, and the hole diameter is 2-30 mm, and the hole spacing is 2-100mm.
  • the rotating shaft of the rotating rack is coaxial with the central axis of the vacuum chamber, and the rotating rack is rotatable with the rotating shaft, and the rotating rack is symmetrically fixed 2-8 shelf, on which the substrate to be treated is placed.
  • the rotating shaft of the rotating rack is coaxial with a central axis of the vacuum chamber, and the rotating rack is rotatable about a rotating shaft, and the rotating rack is symmetrically arranged 2-8 a planetary rotation axis, the planetary rotation axis being perpendicular to the rotating shelf and rotatable;
  • a 2-8-layer rotary stage is disposed on the planetary rotating shaft, and the rotating stage places a substrate to be processed.
  • the central axisymmetric vacuum chamber structure is used to maintain the stability of the concentration of the active species in the space polymerization reaction.
  • the vacuum chamber sidewall intake, radial transport, and central axial exhaust are used:
  • the carrier gas pipeline is provided with an outlet in each discharge chamber, and the carrier gas is sent into each discharge chamber through the pipeline thereof, and then diffused into the vacuum chamber through the multilayer metal grid;
  • the monomer steam pipeline is outside each discharge chamber in the vacuum chamber An outlet is arranged in the front, and the monomer steam is sent into the vacuum chamber through the pipeline;
  • a tail gas collecting pipe is disposed coaxially with the vacuum chamber on the axis of the vacuum chamber, the exhaust gas collecting pipe extends longitudinally through the vacuum chamber, and the pipe end is connected to the vacuum pump, and the pipe wall is evenly opened. The hole and the exhaust gas enter the exhaust gas collecting pipe from the opening in the exhaust gas collecting pipe, and then the vacuum chamber is discharged from the vacuum chamber.
  • the above-mentioned gas transport process in the manner of vacuum chamber side wall inlet, radial transport, and central axial exhaust is concentrated, which is beneficial to improve the stability of the active species concentration in the spatial polymerization reaction, and the active species distribution is more uniform.
  • the process is: monomer steam is generated by a plasma in the vicinity of each discharge chamber to generate a polymerization active species; the polymerization active species are transported radially to the axis of the vacuum chamber under the carrier gas; polymerization activity during transport The number of species is continuously reduced, but on the other hand, the reactive species are continuously collected during the transport process, compensating for the reduction in the number, keeping the concentration stable, the volume density of the active species in the vacuum chamber remains unchanged, and the batch processing is uniform. Good performance, the existing coating equipment and technology and batch treatment substrate coating thickness difference is greater than 30%, while the same batch of treated substrate coating thickness difference of the present invention is less than 10%.
  • a rotating rack is installed in the vacuum chamber; the table in the vacuum chamber of the rotating rack rotates or performs a planetary rotating motion, in particular, the planetary rotating motion is the rotation of the stage around its own planetary rotating shaft, and the rotating shaft surrounds the vacuum chamber with the rotating shaft of the rotating rack Coaxial rotation; the substrate to be treated is placed on the shelf.
  • the rotation of the planet changes the spatial position of the substrate during the coating process, and the spatial position of the different substrates in a complete process changes the same, thereby eliminating the problems of different substrates in the prior art.
  • the difference in coating effect caused by the different spatial positions makes the treatment of each substrate the same, the coating effect is basically the same, and the uniformity between the substrates is better.
  • the vacuum chamber volume can be greatly increased, the processing efficiency is significantly improved
  • the volume of the vacuum chamber can be enlarged to 5-6 of the current vacuum chamber. Times, the number of batches and processing efficiency have increased significantly.
  • multi-layer grid has a blocking effect on plasma and monomer
  • the multi-layer metal grid has a retarding effect on the diffusion of the carrier gas from the discharge chamber to the vacuum chamber, so that the gas pressure in the discharge chamber is higher than the pressure in the vacuum chamber; the multi-layer metal grid counter-diffusion of the monomer vapor from the vacuum chamber to the discharge chamber
  • the invention has a retarding effect, and since the gas pressure in the discharge chamber is higher than the pressure in the vacuum chamber, the monomer vapor is not easily diffused from the vacuum chamber into the discharge chamber, and the monomer vapor is prevented from being excessively decomposed and destroyed by the continuous discharge plasma in the discharge chamber.
  • the device can effectively protect the monomer vapor from being decomposed and destroyed, thereby obtaining a coating of a very good quality polymer.
  • FIG. 1 is a front cross-sectional structural view of a plasma polymerization coating apparatus in which a planetary rotating shaft is disposed on a rotating rack.
  • Figure 2 is a schematic top view of Figure 1.
  • vacuum chamber 1, porous electrode, 3, high frequency power supply, 4, discharge cavity, 5, multi-layer metal grid, 6 , pulse power supply, 7 , discharge power supply, 8 , power supply, 9 , carrier gas pipeline, 10 , single steam pipeline, 11 , exhaust gas collection pipe , 12 , rotating shelf , 13 planetary rotating shaft , 14, rotating the table, 15, substrate.
  • the top and bottom covers of the vacuum chamber 1 are spherical rims that match the cross-section of the inner wall of the side chamber of the vacuum chamber.
  • a porous electrode 2 is mounted in the inner wall of the vacuum chamber 1 near the vacuum chamber 1, and the porous electrode 2 is For the porous arc surface structure which is spaced from the inner wall of the vacuum chamber, the porous electrode is connected with the high frequency power source 3, and eight discharge chambers 4 are sealed and mounted on the outer wall of the vacuum chamber;
  • the porous electrode 2 has a cylindrical shape, and the porous electrode is coaxial with the vacuum chamber, and has a distance of 1 cm from the inner wall of the vacuum chamber, and the porous electrode 2
  • the upper hole is filled with a hole diameter of 30 mm and the hole spacing is 30 mm; the power of the high frequency power source connected to the porous electrode is 15 W.
  • the discharge chamber 4 is cylindrical and made of aluminum with a diameter of 5 cm and a depth of 15 cm.
  • the spacing between the adjacent discharge chambers 4 is 40cm.
  • the distance between the outlet of the monomer vapor line 10 and the discharge chamber 4 is 1 cm.
  • a metal grid 5 is arranged at the junction of the discharge chamber and the inner wall of the vacuum chamber, and the metal grid is insulated from the inner wall of the vacuum chamber, and the metal grid and the pulse power source 6 Connected, the discharge chamber 4 is provided with a power supply 7 , the power supply is connected to the power supply 8 , the discharge chamber is connected with a carrier gas line 9 , and the other end of the carrier gas line is connected to the carrier gas source, the monomer steam line 10 It is connected to the vacuum chamber, and its outlet is located in front of the discharge chamber 4, and the other end of the monomer vapor line is connected to a monomer vapor source.
  • the metal grid is made of stainless steel with a mesh size of 100 mesh and a transmission of 40%.
  • the pulse power supply 6 outputs a positive pulse with parameters of peak 20V, pulse width 1ms, and repetition frequency 10kHz.
  • the discharge source 7 is the filament and its discharge power is 2W.
  • An exhaust gas collection pipe is vertically installed on the central shaft of the vacuum chamber. 11
  • One end of the exhaust gas collecting pipe extends out of the vacuum chamber and is connected with a vacuum pump, and the exhaust gas collecting pipe has a hole in the pipe wall; the exhaust gas collecting pipe 11 has an inner diameter of 25 mm, and the pipe wall has a uniform opening, the hole diameter is 2 mm, and the hole spacing is 2mm.
  • Rotating rack 12 is provided in the vacuum chamber, rotating the shelf 12
  • the rotating shaft is coaxial with the central axis of the vacuum chamber, the rotating rack is rotatable with the rotating shaft, and four planetary rotating shafts 13 are symmetrically arranged on the rotating rack, and the planetary rotating shaft is perpendicular to the rotating rack 12 and can rotate;
  • a four-layer rotary stage 14 is disposed on the planetary rotating shaft, and the rotating stage places the substrate 15 to be processed.
  • a plasma polymerization coating device comprising a vacuum chamber 1, a regular six-polygon having the same side length of the inner wall of the chamber on the side of the vacuum chamber;
  • the top and bottom covers of the vacuum chamber 1 are regular hexagonal arches that match the cross-section of the inner walls of the side chambers of the vacuum chamber.
  • a porous electrode 2 is mounted in the inner wall of the vacuum chamber 1 near the vacuum chamber 1, and the porous electrode 2 is In order to maintain a spacing between the inner wall of the vacuum chamber, the porous electrode is connected to the high-frequency power source 3, and two discharge chambers 4 are sealed on the outer wall of the vacuum chamber;
  • the porous electrode 2 is shaped to be divided into two cylindrical arcuate shapes, and the porous electrode is coaxial with the vacuum chamber and has a distance of 3 cm from the inner wall of the vacuum chamber.
  • the porous electrode 2 is covered with a through hole having a hole diameter of 18 mm and a hole spacing of 15 mm; the power of the high frequency power source connected to the porous electrode is 500 W.
  • the discharge chamber 4 is cylindrical and made of carbon steel with a diameter of 20 cm and a depth of 8 cm. The distance between the axes of the adjacent discharge chambers is 20cm. The distance between the outlet of the monomer vapor line 10 and the discharge chamber 4 is 6 cm.
  • a four-layer metal grid 5 is arranged at the junction of the discharge chamber and the inner wall of the vacuum chamber, and the metal grid is insulated from the inner wall of the vacuum chamber, and the metal grid and the pulse power source 6 Connected, the discharge chamber 4 is provided with a power supply 7 , the power supply is connected to the power supply 8 , the discharge chamber is connected with a carrier gas line 9 , and the other end of the carrier gas line is connected to the carrier gas source, the monomer steam line 10 It is connected to the vacuum chamber, and its outlet is located in front of the discharge chamber 4, and the other end of the monomer vapor line is connected to a monomer vapor source.
  • the metal grid is made of nickel with a mesh size of 600 mesh and a transmission of 32%.
  • the pulse power supply 6 outputs a positive pulse with parameters of peak 86V, pulse width 0.1ms, and repetition frequency of 700Hz.
  • the discharge source 7 is an electrode and its discharge power is 280W.
  • An exhaust gas collection pipe is vertically installed on the central shaft of the vacuum chamber. 11
  • One end of the exhaust gas collecting pipe extends out of the vacuum chamber and is connected with a vacuum pump, and the exhaust gas collecting pipe has a hole in the pipe wall; the exhaust gas collecting pipe 11 has an inner diameter of 60 mm, and the pipe wall has a uniform opening, the hole diameter is 16 mm, and the hole spacing is 55mm.
  • Rotating rack 12 is provided in the vacuum chamber, rotating the shelf 12
  • the rotating shaft is coaxial with the central axis of the vacuum chamber, the rotating rack is rotatable with the rotating shaft, and two planetary rotating shafts 13 are symmetrically arranged on the rotating rack, and the planetary rotating shaft is perpendicular to the rotating rack 12 and can rotate;
  • An eight-layer rotary stage 14 is disposed on the planetary rotating shaft, and the rotating stage places the substrate 15 to be processed.
  • a plasma polymerization coating device comprising a vacuum chamber 1, a positive nine-polygon having a cross section of the inner side wall of the side of the vacuum chamber having the same side length;
  • the top and bottom covers of the vacuum chamber 1 are regular nine-sided plates that match the cross-section of the inner wall of the side chamber of the vacuum chamber.
  • a porous electrode 2 is mounted in the inner wall of the vacuum chamber 1 near the vacuum chamber 1, and the porous electrode 2 is In order to maintain a spacing between the inner wall of the vacuum chamber, the porous electrode is connected to the high-frequency power source 3, and two discharge chambers 4 are sealed on the outer wall of the vacuum chamber;
  • the porous electrode 2 is shaped into a four-stage cylindrical arc shape, and the porous electrode is coaxial with the vacuum chamber, and the inner wall of the vacuum chamber is spaced 6 cm apart.
  • the porous electrode 2 is covered with a through hole having a hole diameter of 30 mm and a hole spacing of 30 mm; the power of the high frequency power source connected to the porous electrode is 1000 W.
  • the discharge chamber 4 is cylindrical and made of stainless steel with a diameter of 12 cm and a depth of 3 cm.
  • the adjacent discharge chamber 4 The spacing between the axes is 7cm.
  • the distance between the outlet of the monomer vapor line 10 and the discharge chamber 4 is 10 cm.
  • a five-layer metal grid 5 is arranged at the junction of the discharge chamber and the inner wall of the vacuum chamber, and the metal grid is insulated from the inner wall of the vacuum chamber, and the metal grid and the pulse power source 6 Connected, the discharge chamber 4 is provided with a power supply 7 , the power supply is connected to the power supply 8 , the discharge chamber is connected with a carrier gas line 9 , and the other end of the carrier gas line is connected to the carrier gas source, the monomer steam line 10 It is connected to the vacuum chamber, and its outlet is located in front of the discharge chamber 4, and the other end of the monomer vapor line is connected to a monomer vapor source.
  • the metal grid is made of nickel with a mesh size of 1000 mesh and a transmittance of 25%.
  • Pulse power supply 6 outputs a positive pulse with parameters of peak 140V, pulse width 2 ⁇ s, and repetition frequency 20Hz.
  • the discharge source 7 is a microwave antenna and its discharge power is 500W.
  • An exhaust gas collection pipe is vertically installed on the central shaft of the vacuum chamber. 11
  • One end of the exhaust gas collecting pipe extends out of the vacuum chamber and is connected with a vacuum pump, and the exhaust gas collecting pipe has a hole in the pipe wall; the exhaust gas collecting pipe 11 has an inner diameter of 100 mm, and the pipe wall has a uniform opening, the hole diameter is 30 mm, and the hole spacing is 100mm.
  • Rotating rack 12 is provided in the vacuum chamber, rotating the shelf 12
  • the rotating shaft is coaxial with the central axis of the vacuum chamber, the rotating rack can rotate with the rotating shaft, and the planetary rotating shaft 13 is symmetrically arranged on the rotating rack, and the planetary rotating shaft is perpendicular to the rotating rack 12 and can rotate;
  • a 2-layer rotary stage 14 is disposed on the planetary rotating shaft, and the rotating stage places the substrate 15 to be processed.
  • a plasma polymerization coating device comprising a vacuum chamber 1, a regular twelve-polygon having the same side length in the inner wall of the chamber on the side of the vacuum chamber;
  • the top and bottom covers of the vacuum chamber 1 are regular twelve-sided arches that match the cross-section of the inner wall of the side chamber of the vacuum chamber.
  • a porous electrode 2 is mounted in the inner wall of the vacuum chamber 1 near the vacuum chamber 1, and the porous electrode 2 is In order to maintain a spacing between the inner wall of the vacuum chamber, the porous electrode is connected to the high-frequency power source 3, and two discharge chambers 4 are sealed on the outer wall of the vacuum chamber;
  • the porous electrode 2 is shaped into a five-section cylindrical arc shape, and the porous electrode is coaxial with the vacuum chamber, and the inner wall of the vacuum chamber is 5 cm apart.
  • the porous electrode 2 is covered with a through hole having a hole diameter of 12 mm and a hole spacing of 18 mm; the power of the high frequency power source connected to the porous electrode is 260 W.
  • the discharge chamber 4 is cylindrical and made of stainless steel with a diameter of 16 cm and a depth of 6 cm.
  • the adjacent discharge chamber 4 The spacing between the axes is 26 cm.
  • the distance between the outlet of the monomer vapor line 10 and the discharge chamber 4 is 4 cm.
  • a six-layer metal grid 5 is arranged at the junction of the discharge chamber and the inner wall of the vacuum chamber, and the metal grid is insulated from the inner wall of the vacuum chamber, and the metal grid and the pulse power source 6 Connected, the discharge chamber 4 is provided with a power supply 7 , the power supply is connected to the power supply 8 , the discharge chamber is connected with a carrier gas line 9 , and the other end of the carrier gas line is connected to the carrier gas source, the monomer steam line 10 It is connected to the vacuum chamber, and its outlet is located in front of the discharge chamber 4, and the other end of the monomer vapor line is connected to a monomer vapor source.
  • the metal grid is made of nickel with a mesh size of 360 mesh and a transmittance of 28%.
  • Pulse power supply 6 outputs positive pulse with parameters: peak 115V, pulse width 160 ⁇ s, repetition frequency 380Hz .
  • the discharge source 7 is a filament and its discharge power is 130W.
  • An exhaust gas collection pipe is vertically installed on the central shaft of the vacuum chamber. 11 One end of the exhaust gas collecting pipe extends out of the vacuum chamber and is connected with a vacuum pump, and the exhaust gas collecting pipe has a hole in the pipe wall; the exhaust gas collecting pipe 11 has an inner diameter of 85 mm, and the pipe wall has a uniform opening, the hole diameter is 18 mm, and the hole spacing is 38mm.
  • the rotating shaft of the rotating rack is coaxial with the central axis of the vacuum chamber, and the rotating rack is rotatable about a rotating shaft, and the rotating rack is symmetrically fixed. A layer stage on which the substrate to be treated is placed.
  • a plasma polymerization coating device comprising a vacuum chamber 1
  • the inner wall of the chamber of the side of the vacuum chamber has a circle of the same diameter in any cross section, that is, the inner wall of the chamber body of the vacuum chamber is a cylinder.
  • the top and bottom covers of the vacuum chamber 1 are circular plates that match the cross-section of the inner wall of the side chamber of the vacuum chamber.
  • a porous electrode 2 is mounted in the inner wall of the vacuum chamber 1 near the vacuum chamber 1, and the porous electrode 2 is In order to maintain a spacing between the inner wall of the vacuum chamber, the porous electrode is connected to the high-frequency power source 3, and two discharge chambers 4 are sealed on the outer wall of the vacuum chamber;
  • the porous electrode 2 is shaped into an eight-segment cylindrical arc shape, and the porous electrode is coaxial with the vacuum chamber and has a distance of 2 cm from the inner wall of the vacuum chamber.
  • the porous electrode 2 is covered with a through hole having a hole diameter of 5 mm and a hole spacing of 12 mm; the power of the high frequency power source connected to the porous electrode is 120 W.
  • the discharge chamber 4 is cylindrical and made of carbon steel with a diameter of 11 cm and a depth of 8 cm.
  • the adjacent discharge chamber 4 The spacing between the axes is 20cm.
  • the distance between the outlet of the monomer vapor line 10 and the discharge chamber 4 is 7 cm.
  • a three-layer metal grid 5 is arranged at the junction of the discharge chamber and the inner wall of the vacuum chamber, and the metal grid is insulated from the inner wall of the vacuum chamber, and the metal grid and the pulse power source 6 Connected, the discharge chamber 4 is provided with a power supply 7 , the power supply is connected to the power supply 8 , the discharge chamber is connected with a carrier gas line 9 , and the other end of the carrier gas line is connected to the carrier gas source, the monomer steam line 10 It is connected to the vacuum chamber, and its outlet is located in front of the discharge chamber 4, and the other end of the monomer vapor line is connected to a monomer vapor source.
  • the metal grid is made of nickel with a mesh size of 640 mesh and a transmission of 30%.
  • Pulse power supply 6 outputs a positive pulse with parameters of peak 58V, pulse width 620 ⁇ s, and repetition frequency 55Hz.
  • the discharge source 7 is an induction coil and has a discharge power of 480W.
  • An exhaust gas collection pipe is vertically installed on the central shaft of the vacuum chamber. 11 One end of the exhaust gas collecting pipe extends out of the vacuum chamber and is connected with a vacuum pump, and the exhaust gas collecting pipe has a hole in the pipe wall; the exhaust gas collecting pipe 11 has an inner diameter of 45 mm, and the pipe wall has a uniform opening, the hole diameter is 24 mm, and the hole spacing is 58mm.
  • the rotating shaft of the rotating rack is coaxial with the central axis of the vacuum chamber, and the rotating rack is rotatable about a rotating shaft, and the rotating rack is symmetrically fixed. A layer stage on which the substrate to be treated is placed.

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Abstract

一种等离子体聚合涂层装置，该装置的真空室（1）侧部的室体内壁任一横截面为相同直径的圆或相同边长的正多边形，正多边形边数至少为6边；真空室（1）内壁处安装有多孔电极（2），多孔电极（2）与高频电源（3）连接，真空室（1）外壁上密封安装有至少两个放电腔（4），放电腔（4）与真空室（1）内壁连接处设置有至少两层金属栅网（5），真空室（1）内的中心轴上竖直安装有尾气收集管（11），真空室（1）内设置有旋转置物架（12），旋转置物架（12）的旋转轴与真空室（1）的中心轴同轴，旋转置物架（12）上放置待处理基材（15）。该装置采用中心轴对称真空室结构保持空间聚合反应活性物种浓度的稳定性，具有真空室的容积大，单次处理批量大，处理效率高、成本低、批处理均匀性良好等优点。

Description

一种等离子体聚合涂层装置
技术领域
本发明属于等离子体工程技术领域，涉及到一种等离子体涂层装置 。
背景技术
等离子体 聚合涂层处理是一种重要的 表面处理方法，它是将需要处理的基材放在真空室内，在真空状态下通入工艺气体和气态有机类单体，通过 放电把有机类气态单体等离子体化，使其产生各类活性种，由这些活性种之间或活性种与单体之间进行加成反应，在基材表面形成聚合物薄膜 。在疏水薄膜等一些应用中，纳米尺度的等离子体 聚合涂层具有优异的特性。但是由于纳米聚合物涂层的膜层很薄，它对涂层的均匀性有很高的要求。现有的等离子体纳米涂层装置采用方形的真空室，在涂层处理过程中，治具及其上放置的基材在真空室内的位置是固定的，由于同一批处理的不同基材在真空室内的不同位置与电极、单体 / 载体气体出口、真空排气口等之间距离的差别，不可避免地会产生涂层均匀性的差别。为了减小这种批处理的不均匀性，现有的等离子体纳米涂层装置只能采用较小容积的真空室和较小的单次处理批量，这很大地降低了处理效率、增大了成本。而即使这样，也仍然不能达到满意的批处理均匀性。随着目前纳米聚合物涂层应用的快速拓展，加工需求和批量急剧增加，解决目前等离子体纳米涂层加工现有技术存在的批量小、效率低、成本高、批处理均匀性 差的问题十分现实和紧迫。
发明内容
本发明要解决的技术问题是提供一种等离子体纳米涂层装置，以解决现有等离子体纳米涂层装置采用方形真空室的容积小、单次处理批量小，处理效率低、成本高、批处理均匀性不良的问题。
本发明技术方案是：一种等离子体聚合涂层装置， 包括真空室，其特征在于：所 述真空室侧部的室体内壁任一横截面为相同直径的圆或相同边长的正多边形，所述正多边形边数至少为 6 边；
所述真空室内靠近真空室的内壁处安装有多孔电极，所述多孔电极为与真空室内壁保持间距的多孔弧面结构，所述多孔电极与高频电源连接，高频电源的功率为 15-1000W ，多孔电极由高频电源供电，放电时产生等离子体用于基材表面清洁和预处理；
所述真空室外壁上密封安装有至少两个放电腔；多孔电极与各放电腔可以根据工艺需要共同放电或分别独立放电。
多孔电极产生等离子体用于清洗，即表面清洁：多孔电极较大功率连续放电产生较强等离子体，用于涂层前清洗基材表面的水气、油污等有机物杂质，还可以活化有机的基材，在其表面形成悬挂键，利于涂层的沉积，增强基材与涂层的结合力，多孔电极在涂层过程中不工作；
放电腔产生等离子体用于聚合：涂层过程中各放电腔内较小功率放电产生较弱等离子体，由金属栅网控制断续释放进入真空室引发单体聚合并沉积在基材表面形成涂层。
所述放电腔与真空室内壁连接处设置有至少两层金属栅网，所述金属栅网与真空室内壁绝缘，金属栅网与脉冲电源连接，脉冲电源的作用是在金属栅网上施加正脉冲偏压，断续释放放电腔内的等离子体进入真空室，其中脉冲关断期间等离子体被多层金属栅网阻挡在放电腔内，脉冲施加期间等离子体穿过多层金属栅网进入真空室以引发真空室内的单体蒸汽发生聚合反应。
所述放电腔内设有放电源，放电源连接供电源，所述放电腔连接有载体气体管路，载体气体管路另一端连接到载体气体源，单体蒸汽管路连接到真空室内，且其出口位于放电腔前方，单体蒸汽管路另一端连接到单体蒸汽源；
所述真空室内的中心轴上竖直安装有尾气收集管，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；
所述真空室内设置有旋转置物架，所述旋转置物架的旋转轴与真空室的中心轴同轴，旋转置物架上放置待处理基材。
所述真空室的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的平板或球缺、正多边形、椭圆形等的拱形结构。
所述多孔电极形状为圆柱筒形状或至少分成两段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 1-6cm ，所述多孔电极上布满通孔，孔径为 2-30mm ，孔间隔为 2-30mm 。
所述放电腔为圆筒形，材质是铝、碳钢或不锈钢，直径为 5-20cm ，深度为 3-15cm ，相邻放电腔轴线之间的间距为 7-40cm 。
所述金属栅网层数为 2-6 层，材质是不锈钢或镍，网孔大小为 100-1000 目，透过率为 25%-40% 。
所述脉冲电源输出正脉冲，其参数为：峰值 20-140V 、脉宽 2μs-1ms 、重复频率 20Hz-10kHz 。
所述放电源是灯丝或电极或感应线圈或微波天线，且其放电功率为 2-500W 。
所述单体蒸汽管路出口与放电腔之间的距离为 1-10cm 。
所述尾气收集管内径为 25-100mm ，其管壁上均匀开孔，孔径为 2-30mm ，孔间隔为 2-100mm 。
所述旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可随旋转轴转动，所述旋转置物架上对称固定设置 2-8 层置物台，所述置物台上放置待处理的基材。
所述旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称设置 2-8 根行星旋转轴，所述行星旋转轴垂直于所述旋转置物架并可自转；
所述行星旋转轴上设置 2-8 层旋转置物台，所述旋转置物台放置待处理的基材。
本发明的有益效果是：
1 、采用中心轴对称真空室结构保持空间聚合反应活性物种浓度的稳定性。
采用真空室侧壁进气、径向输运、中心轴向排气的方式：
载体气体管路在各放电腔内设置出口，载体气体经由其管路送入各放电腔内，再通过多层金属栅网扩散进入真空室；单体蒸汽管路在真空室内每个放电腔外前方设置出口，单体蒸汽经由其管路送入真空室内；在真空室轴线上与真空室共轴设置一个尾气收集管，尾气收集管纵向贯穿真空室，管端连通真空泵，管壁上均匀开孔，尾气由尾气收集管上的开孔进入尾气收集管，再由真空泵排出真空室。
上述采用真空室侧壁进气、径向输运、中心轴向排气的方式中气体输运过程是汇集的，这有利于提高空间聚合反应活性物种浓度的稳定性，活性物种分布更加均匀，其过程是：单体蒸汽在各放电腔附近受等离子体作用产生聚合反应活性物种；聚合反应活性物种在载体气体带动下沿径向向真空室轴线方向输运；在输运过程中聚合反应活性物种的数量不断消耗减少，但是另一方面聚合反应活性物种在输运过程中不断地汇集，补偿了数量的减少，使其浓度保持稳定，真空室内活性物种的体积密度保持不变，批处理均匀性良好，现有涂层设备和技术同批处理基材涂层厚度差别大于 30% ，而本发明的同批处理基材涂层厚度差别小于 10% 。
2 、采用旋转置物架可以显著提高各个基材涂层的均匀性
真空室内安装有旋转置物架；旋转置物架上的置物台真空室内旋转或做行星旋转运动，特别是行星旋转运动是置物台绕自身行星旋转轴自转，同时随旋转置物架的旋转轴绕真空室同轴线公转；置物台上放置待处理的基材。行星旋转使基材在涂层处理过程中所处的空间位置不断变化，不同基材在一个完整的处理过程中所处的空间位置变化相同，从而消除现有技术中因不同基材所处的空间位置不同而造成的涂层效果的差别，使得各个基材处理程度相同，涂层效果基本一样，各个基材之间的均匀性更好。
3 、真空室体积可以大大增加，处理效率显著提高
由于真空室结构和置物架的改进使得在大幅提高批处理涂层膜厚均匀性，真空室容积可以扩大到目前真空室的 5-6 倍，批处理数量和处理效率相应大幅提高。
4 、多层栅网对等离子体和单体都有阻滞作用
多层金属栅网对载体气体由放电腔向真空室的扩散具有阻滞作用，使放电腔内气压高于真空室内气压；多层金属栅网对单体蒸汽由真空室向放电腔的反扩散具有阻滞作用，又由于放电腔内气压高于真空室内气压，使单体蒸汽不易反扩散由真空室进入放电腔，避免单体蒸汽被放电腔内的连续放电等离子体过度分解破坏，本发明的装置可以有效的保护单体蒸汽不被分解破坏，从而获得非常好质量的聚合物的涂层。
附图说明
图 1 为实施例 1 旋转置物架上设置行星旋转轴的等离子体聚合涂层装置正面剖视结构示意图。
图 2 为图 1 的俯视结构示意图。
图中， 1 、真空室， 2 、多孔电极， 3 、高频电源， 4 、放电腔， 5 、 多层金属栅网， 6 、脉冲电源， 7 、放电源， 8 、供电源， 9 、载体气体管路， 10 、单体蒸汽管路， 11 、尾气收集管， 12 、旋转置物架， 13 行星旋转轴， 14 、旋转置物台， 15 、基材。
具体实施方式
下面结合技术方案和附图详细叙述本发明的具体实施例。
实施例 1
如图 1 和图 2 所述的一种等离子体聚合涂层装置， 包括真空室， 真空室 1 侧部的室体内壁任一横截面为相同直径的圆，即真空室的室体的内壁为圆柱体。
真空室 1 的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的球缺。
真空室 1 内靠近真空室 1 的内壁处安装有多孔电极 2 ，多孔电极 2 为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源 3 连接，真空室外壁上密封安装有八个放电腔 4 ；
多孔电极 2 形状为圆柱筒形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 1cm ，多孔电极 2 上布满通孔，孔径为 30mm ，孔间隔为 30mm ；与多孔电极连接的高频电源的功率是 15W 。
放电腔 4 为圆筒形，材质是铝，直径为 5cm ，深度为 15cm ，相邻放电腔 4 轴线之间的间距为 40cm 。单体蒸汽管路 10 出口与放电腔 4 之间的距离为 1cm 。
放电腔与真空室内壁连接处设置有两层金属栅网 5 ，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源 6 连接，放电腔 4 内设有放电源 7 ，放电源连接供电源 8 ，放电腔连接有载体气体管路 9 ，载体气体管路另一端连接到载体气体源，单体蒸汽管路 10 连接到真空室内，且其出口位于放电腔 4 前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是不锈钢，网孔大小为 100 目，透过率为 40% 。
脉冲电源 6 输出正脉冲，其参数为：峰值 20V 、脉宽 1ms 、重复频率 10kHz 。
放电源 7 是灯丝且其放电功率为 2W 。
真空室内的中心轴上竖直安装有尾气收集管 11 ，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管 11 内径为 25mm ，其管壁上均匀开孔，孔径为 2mm ，孔间隔为 2mm 。
真空室内设置有旋转置物架 12 ，旋转置物架 12 的旋转轴与真空室的中心轴同轴，旋转置物架可随旋转轴转动，旋转置物架上对称设置 4 根行星旋转轴 13 ，行星旋转轴垂直于旋转置物架 12 并可自转；
行星旋转轴上设置 4 层旋转置物台 14 ，所述旋转置物台放置待处理的基材 15 。
实施例 2
一种等离子体聚合涂层装置， 包括真空室1， 真空室侧部的室体内壁任一横截面为相同边长的正六多边形；
真空室 1 的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的正六边形的拱形结构。
真空室 1 内靠近真空室 1 的内壁处安装有多孔电极 2 ，多孔电极 2 为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源 3 连接，真空室外壁上密封安装有两个放电腔 4 ；
多孔电极 2 形状为分成两段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 3cm ，多孔电极 2 上布满通孔，孔径为 18mm ，孔间隔为 15mm ；与多孔电极连接的高频电源的功率是 500W 。
放电腔 4 为圆筒形，材质是碳钢，直径为 20cm ，深度为 8cm ，相邻放电腔 4 轴线之间的间距为 20cm 。单体蒸汽管路 10 出口与放电腔 4 之间的距离为 6cm 。
放电腔与真空室内壁连接处设置有四层金属栅网 5 ，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源 6 连接，放电腔 4 内设有放电源 7 ，放电源连接供电源 8 ，放电腔连接有载体气体管路 9 ，载体气体管路另一端连接到载体气体源，单体蒸汽管路 10 连接到真空室内，且其出口位于放电腔 4 前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为 600 目，透过率为 32% 。
脉冲电源 6 输出正脉冲，其参数为：峰值 86V 、脉宽 0.1ms 、重复频率 700Hz 。
放电源 7 是电极且其放电功率为 280W 。
真空室内的中心轴上竖直安装有尾气收集管 11 ，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管 11 内径为 60mm ，其管壁上均匀开孔，孔径为 16mm ，孔间隔为 55mm 。
真空室内设置有旋转置物架 12 ，旋转置物架 12 的旋转轴与真空室的中心轴同轴，旋转置物架可随旋转轴转动，旋转置物架上对称设置 2 根行星旋转轴 13 ，行星旋转轴垂直于旋转置物架 12 并可自转；
行星旋转轴上设置 8 层旋转置物台 14 ，所述旋转置物台放置待处理的基材 15 。
实施例 3
一种等离子体聚合涂层装置， 包括真空室1， 真空室侧部的室体内壁任一横截面为相同边长的正九多边形；
真空室 1 的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的正九边形平板。
真空室 1 内靠近真空室 1 的内壁处安装有多孔电极 2 ，多孔电极 2 为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源 3 连接，真空室外壁上密封安装有两个放电腔 4 ；
多孔电极 2 形状为分成四段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 6cm ，多孔电极 2 上布满通孔，孔径为 30mm ，孔间隔为 30mm ；与多孔电极连接的高频电源的功率是 1000W 。
放电腔 4 为圆筒形，材质是不锈钢，直径为 12cm ，深度为 3cm ，相邻放电腔 4 轴线之间的间距为 7cm 。单体蒸汽管路 10 出口与放电腔 4 之间的距离为 10cm 。
放电腔与真空室内壁连接处设置有五层金属栅网 5 ，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源 6 连接，放电腔 4 内设有放电源 7 ，放电源连接供电源 8 ，放电腔连接有载体气体管路 9 ，载体气体管路另一端连接到载体气体源，单体蒸汽管路 10 连接到真空室内，且其出口位于放电腔 4 前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为 1000 目，透过率为 25% 。
脉冲电源 6 输出正脉冲，其参数为：峰值 140V 、脉宽 2μs 、重复频率 20Hz 。
放电源 7 是微波天线且其放电功率为 500W 。
真空室内的中心轴上竖直安装有尾气收集管 11 ，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管 11 内径为 100mm ，其管壁上均匀开孔，孔径为 30mm ，孔间隔为 100mm 。
真空室内设置有旋转置物架 12 ，旋转置物架 12 的旋转轴与真空室的中心轴同轴，旋转置物架可随旋转轴转动，旋转置物架上对称设置 8 根行星旋转轴 13 ，行星旋转轴垂直于旋转置物架 12 并可自转；
行星旋转轴上设置 2 层旋转置物台 14 ，所述旋转置物台放置待处理的基材 15 。
实施例 4
一种等离子体聚合涂层装置， 包括真空室1， 真空室侧部的室体内壁任一横截面为相同边长的正十二多边形；
真空室 1 的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的正十二边形拱形结构。
真空室 1 内靠近真空室 1 的内壁处安装有多孔电极 2 ，多孔电极 2 为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源 3 连接，真空室外壁上密封安装有两个放电腔 4 ；
多孔电极 2 形状为分成五段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 5cm ，多孔电极 2 上布满通孔，孔径为 12mm ，孔间隔为 18mm ；与多孔电极连接的高频电源的功率是 260W 。
放电腔 4 为圆筒形，材质是不锈钢，直径为 16cm ，深度为 6cm ，相邻放电腔 4 轴线之间的间距为 26cm 。单体蒸汽管路 10 出口与放电腔 4 之间的距离为 4cm 。
放电腔与真空室内壁连接处设置有六层金属栅网 5 ，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源 6 连接，放电腔 4 内设有放电源 7 ，放电源连接供电源 8 ，放电腔连接有载体气体管路 9 ，载体气体管路另一端连接到载体气体源，单体蒸汽管路 10 连接到真空室内，且其出口位于放电腔 4 前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为 360 目，透过率为 28% 。
脉冲电源 6 输出正脉冲，其参数为：峰值 115V 、脉宽 160μs 、重复频率 380Hz 。
放电源 7 是灯丝且其放电功率为 130W 。
真空室内的中心轴上竖直安装有尾气收集管 11 ，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管 11 内径为 85mm ，其管壁上均匀开孔，孔径为 18mm ，孔间隔为 38mm 。
旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称固定设置 2 层置物台，所述置物台上放置待处理的基材。
实施例 5
一种等离子体聚合涂层装置， 包括真空室1， 真空室侧部的室体内壁任一横截面为相同直径的圆，即真空室的室体的内壁为圆柱体。
真空室 1 的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的圆形平板。
真空室 1 内靠近真空室 1 的内壁处安装有多孔电极 2 ，多孔电极 2 为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源 3 连接，真空室外壁上密封安装有两个放电腔 4 ；
多孔电极 2 形状为分成八段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 2cm ，多孔电极 2 上布满通孔，孔径为 5mm ，孔间隔为 12mm ；与多孔电极连接的高频电源的功率是 120W 。
放电腔 4 为圆筒形，材质是碳钢，直径为 11cm ，深度为 8cm ，相邻放电腔 4 轴线之间的间距为 20cm 。单体蒸汽管路 10 出口与放电腔 4 之间的距离为 7cm 。
放电腔与真空室内壁连接处设置有三层金属栅网 5 ，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源 6 连接，放电腔 4 内设有放电源 7 ，放电源连接供电源 8 ，放电腔连接有载体气体管路 9 ，载体气体管路另一端连接到载体气体源，单体蒸汽管路 10 连接到真空室内，且其出口位于放电腔 4 前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为 640 目，透过率为 30% 。
脉冲电源 6 输出正脉冲，其参数为：峰值 58V 、脉宽 620μs 、重复频率 55Hz 。
放电源 7 是感应线圈且其放电功率为 480W 。
真空室内的中心轴上竖直安装有尾气收集管 11 ，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管 11 内径为 45mm ，其管壁上均匀开孔，孔径为 24mm ，孔间隔为 58mm 。
旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称固定设置 8 层置物台，所述置物台上放置待处理的基材。

Claims (10)

  1. 一种等离子体聚合涂层装置， 包括真空室，其特征在于：所 述真空室（ 1 ）侧部的室体内壁任一横截面为相同直径的圆或相同边长的正多边形，所述正多边形边数至少为 6 边；
    所述真空室（ 1 ）内靠近真空室（ 1 ）的内壁处安装有多孔电极（ 2 ），所述多孔电极（ 2 ）为与真空室内壁保持间距的多孔弧面结构，所述多孔电极与高频电源（ 3 ）连接，所述真空室外壁上密封安装有至少两个放电腔（ 4 ）；
    所述放电腔与真空室内壁连接处设置有至少两层金属栅网（ 5 ），所述金属栅网与真空室内壁绝缘，金属栅网与脉冲电源（ 6 ）连接，所述放电腔（ 4 ）内设有放电源（ 7 ），放电源连接供电源（ 8 ），所述放电腔连接有载体气体管路（ 9 ），载体气体管路另一端连接到载体气体源，单体蒸汽管路（ 10 ）连接到真空室内，且其出口位于放电腔（ 4 ）前方，单体蒸汽管路另一端连接到单体蒸汽源；
    所述真空室内的中心轴上竖直安装有尾气收集管（ 11 ），尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；
    所述真空室内设置有旋转置物架（ 12 ），所述旋转置物架的旋转轴与真空室的中心轴同轴，旋转置物架上放置待处理基材。
  2. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述真空室（ 1 ）的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的平板或拱形结构。
  3. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述多孔电极（ 2 ）形状为圆柱筒形状或至少分成两段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为 1-6cm ，所述多孔电极（ 2 ）上布满通孔，孔径为 2-30mm ，孔间隔为 2-30mm ；所述与多孔电极连接的高频电源（ 3 ）的功率是 15-1000W 。
  4. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述放电腔（ 4 ）为圆筒形，材质是铝、碳钢或不锈钢，直径为 5-20cm ，深度为 3-15cm ，相邻放电腔（ 4 ）轴线之间的间距为 7-40cm ；所述单体蒸汽管路（ 10 ）出口与放电腔（ 4 ）之间的距离为 1-10cm 。
  5. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述金属栅网（ 5 ）层数为 2-6 层，材质是不锈钢或镍，网孔大小为 100-1000 目，透过率为 25%-40% 。
  6. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述脉冲电源（ 6 ）输出正脉冲，其参数为：峰值 20-140V 、脉宽 2μs-1ms 、重复频率 20Hz-10kHz 。
  7. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述放电源（ 7 ）是灯丝或电极或感应线圈或微波天线，且其放电功率为 2-500W 。
  8. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述尾气收集管（ 11 ）内径为 25-100mm ，其管壁上均匀开孔，孔径为 2-30mm ，孔间隔为 2-100mm 。
  9. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称固定设置 2-8 层置物台，所述置物台上放置待处理的基材。
  10. 根据权利要求 1 所述的一种等离子体聚合涂层装置，其特征在于：所述旋转置物架（ 12 ）的旋转轴与真空室的中心轴同轴，所述旋转置物架可随旋转轴转动，所述旋转置物架上对称设置 2-8 根行星旋转轴（ 13 ），所述行星旋转轴垂直于所述旋转置物架（ 12 ）并可自转；
    所述行星旋转轴上设置 2-8 层旋转置物台（ 14 ），所述旋转置物台放置待处理的基材（ 15 ）。
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