CN110684963B - 用于镀膜设备的气流导散装置及其应用 - Google Patents
用于镀膜设备的气流导散装置及其应用 Download PDFInfo
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- CN110684963B CN110684963B CN201910997644.5A CN201910997644A CN110684963B CN 110684963 B CN110684963 B CN 110684963B CN 201910997644 A CN201910997644 A CN 201910997644A CN 110684963 B CN110684963 B CN 110684963B
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- 239000006185 dispersion Substances 0.000 title claims abstract description 149
- 239000007888 film coating Substances 0.000 title description 7
- 238000009501 film coating Methods 0.000 title description 7
- 230000000903 blocking effect Effects 0.000 claims abstract description 131
- 238000000576 coating method Methods 0.000 claims abstract description 48
- 239000011248 coating agent Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract 4
- 230000004888 barrier function Effects 0.000 claims description 16
- 239000004744 fabric Substances 0.000 claims description 5
- 230000035699 permeability Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 73
- 239000010408 film Substances 0.000 description 41
- 238000005086 pumping Methods 0.000 description 14
- 239000002120 nanofilm Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
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- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
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- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000002360 preparation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Nozzles (AREA)
Abstract
Description
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910997644.5A CN110684963B (zh) | 2019-10-21 | 2019-10-21 | 用于镀膜设备的气流导散装置及其应用 |
TW109136424A TWI768515B (zh) | 2019-10-21 | 2020-10-21 | 用於鍍膜設備的氣流導散裝置及其應用 |
Applications Claiming Priority (1)
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CN201910997644.5A CN110684963B (zh) | 2019-10-21 | 2019-10-21 | 用于镀膜设备的气流导散装置及其应用 |
Publications (2)
Publication Number | Publication Date |
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CN110684963A CN110684963A (zh) | 2020-01-14 |
CN110684963B true CN110684963B (zh) | 2022-05-20 |
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CN201910997644.5A Active CN110684963B (zh) | 2019-10-21 | 2019-10-21 | 用于镀膜设备的气流导散装置及其应用 |
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CN (1) | CN110684963B (zh) |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS601952B2 (ja) * | 1980-01-25 | 1985-01-18 | 三菱電機株式会社 | プラズマエツチング装置 |
FR2882064B1 (fr) * | 2005-02-17 | 2007-05-11 | Snecma Propulsion Solide Sa | Procede de densification de substrats poreux minces par infiltration chimique en phase vapeur et dispositif de chargement de tels substrats |
CN102758185A (zh) * | 2011-04-29 | 2012-10-31 | 深圳富泰宏精密工业有限公司 | 分流器 |
CN204022934U (zh) * | 2014-06-12 | 2014-12-17 | 深圳市大富精工有限公司 | 一种真空镀膜设备 |
CN204022935U (zh) * | 2014-06-12 | 2014-12-17 | 深圳市大富精工有限公司 | 一种真空镀膜设备 |
US9349605B1 (en) * | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
CN109155242B (zh) * | 2016-05-20 | 2023-05-09 | 应用材料公司 | 用于半导体处理的气体分配喷头 |
CN106622824B (zh) * | 2016-11-30 | 2018-10-12 | 江苏菲沃泰纳米科技有限公司 | 一种等离子体聚合涂层装置 |
CN107012447B (zh) * | 2017-04-20 | 2019-09-17 | 京东方科技集团股份有限公司 | 一种扩散装置和沉积腔室 |
CN108690972A (zh) * | 2018-08-06 | 2018-10-23 | 长江存储科技有限责任公司 | 用于膜层沉积装置的气体注入管及膜层沉积装置 |
CN209476583U (zh) * | 2018-11-30 | 2019-10-11 | 深圳奥拦科技有限责任公司 | 匀气装置 |
CN209508389U (zh) * | 2019-01-14 | 2019-10-18 | 深圳奥拦科技有限责任公司 | 镀膜装置 |
CN110344002B (zh) * | 2019-06-11 | 2022-03-22 | 惠科股份有限公司 | 一种蒸镀装置和蒸镀方法 |
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- 2019-10-21 CN CN201910997644.5A patent/CN110684963B/zh active Active
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Address after: No.182, East Ring Road, Yuqi supporting area, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Applicant after: Jiangsu feiwotai nanotechnology Co.,Ltd. Address before: 214183 East Ring Road, Yuqi Industrial Park, Wuxi City, Jiangsu Province Applicant before: Jiangsu Favored Nanotechnology Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Air flow dispersion device and its application for coating equipment Granted publication date: 20220520 Pledgee: Wuxi Branch of China CITIC Bank Co.,Ltd. Pledgor: Jiangsu feiwotai nanotechnology Co.,Ltd. Registration number: Y2024980016337 |
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