WO2017213207A1 - セラミックス回路基板、及び、セラミックス回路基板の製造方法 - Google Patents
セラミックス回路基板、及び、セラミックス回路基板の製造方法 Download PDFInfo
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- WO2017213207A1 WO2017213207A1 PCT/JP2017/021247 JP2017021247W WO2017213207A1 WO 2017213207 A1 WO2017213207 A1 WO 2017213207A1 JP 2017021247 W JP2017021247 W JP 2017021247W WO 2017213207 A1 WO2017213207 A1 WO 2017213207A1
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- WIPO (PCT)
- Prior art keywords
- active metal
- layer
- copper
- circuit board
- bonding
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- H05K1/00—Printed circuits
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- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
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- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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- B23K35/3006—Ag as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/74—Forming laminates or joined articles comprising at least two different interlayers separated by a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
- H05K2201/066—Heatsink mounted on the surface of the PCB
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/128—Molten metals, e.g. casting thereof, or melting by heating and excluding molten solder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0058—Laminating printed circuit boards onto other substrates, e.g. metallic substrates
- H05K3/0061—Laminating printed circuit boards onto other substrates, e.g. metallic substrates onto a metallic substrate, e.g. a heat sink
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
Definitions
- the present invention relates to a ceramic circuit board used for a power module or the like.
- a ceramic circuit board in which a copper circuit and a copper heat sink are joined to a ceramic board, and the durability of the joint is ensured even when the copper circuit and the copper heat sink are thickened to improve heat dissipation.
- Ceramic circuit boards using ceramic substrates are applied as circuit boards for power modules such as IGBTs (Insulated Gate Bipolar Transistors) used in hybrid cars and power generation facilities.
- a ceramic circuit board has a copper circuit made of a copper-based material for connecting to a semiconductor element on one side of the board made of ceramics, and a copper heat dissipation made of a copper-based material for radiating heat generated by the semiconductor element on the other side. It is the board
- the ceramic circuit board is formed by bonding a copper circuit and a copper heat sink to the ceramic board.
- an active metal method is generally adopted in consideration of joining of different materials such as ceramics and metal (copper).
- the active metal method is an embodiment of a joining method by brazing.
- the active metal method uses an active metal brazing material in which an active metal such as Ti or Zr is added to a brazing filler metal component such as an Ag brazing filler metal. Is a method of joining ceramics to ceramics.
- the active metal in the active metal brazing material gathers at the bonding interface between the brazing filler metal component and the ceramic and reacts with oxygen and nitrogen in the ceramic to obtain a bonding force.
- this active metal brazing material for example, an Ag—Cu—Ti brazing material and an Ag—Cu—Ti—Sn brazing material are known.
- a braze paste by mixing and dispersing a metal powder constituting an active metal brazing material in an organic solvent.
- a metal powder constituting an active metal brazing material for example, in the case of an Ag—Cu—Ti brazing filler metal, Ag powder and Cu powder, which are brazing filler metal components, and Ti metal or Ti compound powder (TiH 2 powder, etc.), which is an active metal, are mixed in an organic solvent to be active.
- a metal brazing paste is prepared. Then, after applying this active metal brazing paste to the ceramic substrate, the copper circuit and the copper heat sink are placed in a paste and heated to a predetermined temperature to melt each metal powder in the active metal brazing material.
- a bonding layer is formed between the ceramic substrate and the copper circuit (copper heat sink).
- the bonding layer includes an active metal compound layer that is generated when the active metal moves and reacts with the bonding interface with the ceramic.
- the bonding layer has a two-layer structure of an active metal compound layer and a brazing filler metal layer mainly composed of a brazing filler metal component such as Ag or Cu.
- thick copper increases the thermal expansion difference between the copper circuit and the copper heat sink and the ceramic substrate more than before, and decreases the durability and reliability of the joint and the substrate.
- Copper-based materials and ceramics are different materials, and their thermal expansion coefficients are greatly different.
- This thermal expansion difference becomes a factor of thermal stress, and the thermal cycle due to on / off of the module affects the configuration of the ceramic circuit board, particularly the bonding layer.
- the problem of thermal stress based on such a thermal expansion difference has existed even in the conventional ceramic circuit board, but becomes more prominent due to the expansion of the thermal expansion difference due to thick copper. And the load rise by expansion of a thermal expansion difference will cause peeling of a copper circuit and a copper heat sink, and a crack of a ceramic substrate.
- the present invention has been made based on the background as described above, and provides a ceramic circuit board that is less susceptible to substrate cracking and copper peeling even when subjected to a load due to a difference in thermal expansion between the ceramic substrate and copper. In this problem, a particularly preferable structure of the bonding layer will be clarified. Another object of the present invention is to clarify the manufacturing method for the ceramic circuit board with improved reliability and durability.
- the present inventors first analyzed in detail the structure of the bonding layer of the ceramic circuit board manufactured by the conventional active metal method.
- the active metal brazing material is supplied to the bonding surface of the substrate in the form of a paste in the conventional ceramic circuit board manufacturing process.
- the active metal brazing material paste is in a state in which a metal powder of a brazing filler metal component (Ag, Cu, etc.) and an intermetallic compound powder of an active metal (Ti, etc.) are dispersed in a solvent.
- the paste-like active metal brazing material is easy to prepare and has good workability, so it has excellent joining workability. For this reason, the active metal method using a paste-like active metal brazing material has become the mainstream method for manufacturing ceramic circuit boards.
- the bonding layer formed by melting and solidifying the paste-like (powder-like) brazing material includes a brazing material layer mainly composed of a brazing material component exhibiting a solidified structure, a ceramic substrate, And a two-layer structure comprising an active metal compound layer formed at the interface.
- the inventors focused on the bonding area of the active metal compound layer to the ceramic substrate.
- the bonding area is an area of a region in contact with the ceramic substrate for each of the active metal compound layer or the bonding layer.
- the present inventors evaluated the ratio of the bonding area of the active metal compound layer to the bonding area of the entire bonding layer with respect to the bonding layer formed by the conventional active metal brazing paste, and the ratio was 50.
- the ratio of the bonding area is also referred to in the above-mentioned Patent Document 1, in which a ratio of 85% at maximum is disclosed as the occupation ratio.
- the active metal compound layer is considered to be a part that ensures the bonding between the ceramic substrate and the bonding layer, and thus affects the bonding force between the copper circuit or the copper heat sink and the ceramic substrate.
- the inventors of the present invention thought that the form of the active metal compound layer in the bonding layer will become more important in the future for power module circuit boards that will be made thicker and heat generation will increase.
- shape control of the active metal compound layer there is a limit to the conventional approach based on the paste-like brazing material.
- the present inventors decided to study from reviewing the process of bonding the ceramic substrate to the copper circuit and the copper heat sink.
- a bulk-type active metal brazing material in which each constituent metal is alloyed is applied instead of a paste-form active metal brazing material formed by mixing metal powders, it is possible to exhibit durability higher than conventional. It has been found that a bonding layer can be formed. And the structure of the joining layer formed at this time and the active metal compound layer in it was examined, and it came to the present invention.
- the present invention relates to a ceramic substrate, a copper circuit made of a copper-based material bonded to one surface of the ceramic via a bonding layer, and a copper bonded to the other surface of the ceramic via a bonding layer.
- the bonding layer comprises Ag as an essential component and at least one brazing filler metal component and at least one active metal component.
- the content of the active metal is 0.5% by mass or more and 2.0% by mass or less with respect to the metal element amount of the entire bonding layer, and the bonding layer is made of the brazing filler metal component.
- an active metal compound layer containing the active metal wherein the active metal compound layer is formed along a bonding interface with the ceramic substrate, and the bonding layer and the ceramic substrate Occupying the bonding area between the percentage of bonding area between the ceramic substrate and the active metal compound layer is a ceramic circuit board, characterized in that at least 88%.
- the ceramic circuit board according to the present invention uses the active metal brazing material in which the brazing filler metal component and the active metal are alloyed and integrated, and the copper circuit and the copper heat sink are appropriately bonded to the ceramic board. It is manufactured by joining under.
- the feature of the present invention resides in both the component composition and the structure of the bonding layer.
- the structural feature of the bonding layer is in the form of an active metal compound layer formed at the bonding interface.
- the bonding layer is formed between the ceramic substrate and the copper circuit and between the ceramic substrate and the copper heat sink.
- the composition and structure of the bonding layer described below are for both bonding layers.
- the metal elements constituting the bonding layer are at least two kinds of brazing filler metal components containing Ag as an essential component and at least one active metal. These components are metal elements derived from the active metal brazing alloy applied in the production of ceramic circuit boards.
- a brazing filler metal component is two or more metal components that can be melted at a relatively low temperature by mixing or alloying, and forms a brazing filler metal layer by solidifying. It is a metal.
- the brazing material layer has an action of joining the copper circuit or the copper heat sink and the active metal compound layer to form an integrated ceramic circuit board.
- the brazing filler metal component is a metal group comprising at least one combination of metals having two or more metals and having a eutectic composition.
- Ag is an essential component as a brazing filler metal component. This is because, in the active metal method, a large amount of brazing material (silver brazing) containing Ag as a main component is used and the thermal conductivity of the bonding layer is improved.
- a metal which comprises a brazing filler metal component with Ag at least any 1 type of metal of Cu, Sn, In, Ni, Si, and Li is preferable.
- the bonding object of the present invention is made of a copper-based material to ensure good bonding properties.
- the combination of Ag and Cu has a eutectic composition, these metals have appropriateness as a brazing filler metal component.
- Cu is contained as a brazing filler metal component, it is preferably contained in an amount of 20% by weight to 40% by weight with respect to the entire bonding layer.
- At least one metal of Sn, In, Ni, Si, and Li can be a brazing material component in the present invention.
- These metals are metal elements that are often added to adjust the material structure of the active metal brazing alloy used for bonding. That is, in an active metal brazing alloy, an active metal such as Ti may be dispersed in an alloy composed of brazing filler metal components while forming an intermetallic compound (for example, a Cu—Ti compound). Many intermetallic compounds of active metals have high hardness and may affect the workability of the brazing material.
- Sn, In, Ni, Si, and Li are brazing filler metal components, but have higher bonding properties with active metals such as Ti than Ag and Cu.
- Sn, In, Ni, Si, and Li are added as brazing filler metal components, these preferentially bond with Ti to produce fine intermetallic compounds to control the material structure of the active metal brazing alloy. be able to. Because of this behavior, Sn, In, Ni, Si, and Li may move together with an active metal such as Ti, and may be included in the active metal compound layer at the bonding interface. Sn, In, Ni, Si, and Li may form a compound phase with the active metal and be dispersed in the brazing material layer. In addition, when a joining layer contains Sn, In, Ni, Si, Li, the total content of these metals has a preferable thing of 0.1 to 10 mass% with respect to a joining layer.
- the active metal is a component for forming an active metal compound layer for joining the ceramic substrate and the brazing material layer. In the bonding step, the active metal moves to the bonding interface with the ceramic substrate and reacts with O, N, Si, etc. in the ceramic to form an active metal compound layer.
- the active metal includes at least one metal element of Ti, Zr, Hf, Nb, Ta, V, Cr, Y, Al, and Mo. These metal elements are excellent in the reaction activity with the constituent elements of ceramics and also have good bondability between the formed active intermetallic compound and the brazing filler metal layer (Ag, Cu). Particularly preferred as active metals are Ti and Zr.
- the content of the active metal contained in the whole joining layer 0.5 mass% or more and 2.0 mass% or less are controlled.
- the content of the active metal is in a range lower than the active metal content of the joining layer formed from the pasty / powdered active metal brazing material which is a conventional technique. That is, the content of the active metal contained in the entire bonding layer of the present invention is a clear difference from the prior art.
- the alloyed active metal brazing material is used in the present invention.
- the alloyed active metal brazing material an active metal compound layer in a state suitable for the bonding interface can be formed even if the active metal content is low. This is because the alloy is in a state where the active metal and the brazing filler metal component are mixed and bonded at the atomic level, so that the active metal atom can quickly move to the bonding interface with the ceramic and react.
- the joining layer of this invention contains a some active metal, those total amount will be 0.5 mass% or more and 2.0 mass% or less. Moreover, as for content of an active metal, 1.0 mass% or more and 2.0 mass% or less are more preferable.
- the content of the active metal is based on the total mass of the metal elements constituting the bonding layer.
- the bonding layer is formed, the active metal is combined with nonmetals such as O, N, and Si in the ceramics, and therefore the mass change corresponding thereto is taken into consideration. However, since this mass change is slight, it can be practically approximated to the concentration of the active metal in the active metal brazing alloy used at the time of joining.
- the distribution of the active metal in the bonding layer most of the active metal exists at the bonding interface to form a compound layer, but a part of the active metal is distributed inside the bonding layer (brazing material layer).
- the bonding layer is composed of a brazing material layer and an active metal compound layer.
- the present invention is also characterized in the structure of the bonding layer, particularly in the form of the active metal compound layer formed at the bonding interface.
- the brazing material layer is an alloy layer composed of the brazing material components described above.
- the brazing material layer is made of an Ag—Cu alloy.
- This Ag—Cu alloy has a material structure in which an Ag phase or an alloy phase mainly composed of Ag ( ⁇ phase) and a Cu phase or an alloy phase mainly composed of Cu ( ⁇ phase) are mixed.
- a brazing filler metal component (Sn, In, etc.) other than Ag and Cu is included, the brazing filler metal component is alloyed with any of the above Ag phase, ⁇ phase, Cu phase, ⁇ phase, or a separate alloy phase. And are dispersed in the brazing filler metal layer, or an active metal and an alloy phase are formed and dispersed in the brazing filler metal layer.
- the active metal compound layer is a layered compound formed by combining an active metal such as Ti with O, N, Si or the like in ceramics.
- the active metal compound layer optionally includes at least one of Sn, In, Ni, Si, and Li as additives. Therefore, the components of the active metal compound layer are not constant and vary depending on the type of ceramic to be joined and the amount of additive elements.
- the active metal compound layer is defined as a compound layer that essentially contains an active metal and is in contact with the bonding interface. In the present invention, not all active metals contained in the bonding layer form a compound layer at the interface, and some active metals may form a compound phase dispersed inside the brazing material layer. Such a dispersed compound phase does not correspond to the active metal compound layer in the present invention based on the above definition.
- the active metal compound layer is concentrated in the vicinity of the bonding interface so that the active metal compound layer covers a wide range, thereby increasing the bonding force. Specifically, the ratio of the bonding area by the active metal compound layer to the bonding area by the bonding layer is 88% or more.
- the active metal compound layer is a layer for securing the bondability between ceramics and a metal (a brazing filler metal layer) such as Ag, Cu, and the layer for bonding the ceramic substrate to the copper circuit and the copper heat sink. is there. This invention makes it a subject to make durability of the joining layer with respect to the thermal stress load based on the thermal expansion difference of a board
- the ratio of the bonding area of the metal compound layer is defined.
- the area of the entire bonding interface is a bonding area by the bonding layer, which is a contact area between the bonding layer and the ceramic substrate.
- the bonding area of the active metal compound layer is the contact area between the active metal compound layer and the ceramic substrate.
- the circuit substrate is subjected to repeated thermal stress load.
- the durability time will be insufficient.
- the higher the ratio related to the bonding area the better.
- the limit is about 95%, and extremely high durability can be expected near this upper limit.
- the measurement of the ratio of the bonding area between the active metal compound layer and the ceramic substrate in the bonding area between the bonding layer and the ceramic substrate is not particularly limited as long as each bonding area can be measured and estimated.
- this measurement method a cross-sectional observation of an arbitrary part including a bonding layer is performed on a circuit board, the width (length) of the bonding layer in contact with the bonding interface, and the width (length) of the active metal compound layer. And the ratio thereof can be used as the ratio of the bonding area.
- FIG. 1 A specific example of a method for measuring the ratio of the bonding area between the active metal compound layer and the ceramic substrate to the bonding area between the bonding layer and the ceramic substrate by cross-sectional observation is shown in FIG.
- FIG. 1 When examining the ratio of the bonding area of the active metal compound layer, as shown in FIG. 1, arbitrarily observe a plurality of partial cross sections of the bonding layer, and determine the width of the bonding layer and the width of the active metal compound layer in the observation field. Each can be measured and the average value of the ratios obtained from them can be employed (see FIG. 1 (a)).
- the cross section of the entire bonding layer may be arbitrarily observed, the width of the entire bonding layer and the width of the active metal compound layer may be measured to calculate the ratio, and the average value thereof may be employed (FIG. 1 (b). )).
- the width of each divided active metal compound layer (l 1 and l 2 in FIGS. 1A and 1B) is measured. Then, taking the sum as the width of the active metal compound layer, the ratio to the width of the bonding layer is calculated.
- FIG. 1 shows the examination example in the joining layer of a copper circuit and a ceramic substrate, it can examine similarly about the joining layer of a copper heat sink and a ceramic substrate.
- the suitable range about the thickness of an active metal compound layer is also clarified. That is, the thickness of the active metal compound layer of the bonding layer in the circuit board of the present invention is preferably 1/40 or more and 1/10 or less with respect to the total thickness of the bonding layer. As can be seen from this numerical range, the active metal compound layer in the present invention can be said to be a considerably thin layer with respect to the entire bonding layer. Thus, the reason why the active metal compound layer in the present invention is relatively thin is that the active metal content in the bonding layer is low.
- the thickness of the active metal compound layer is set in the above range. When the thickness is less than 1/40, the bonding strength between the ceramic and the metal (brazing material layer) is poor. Does not occur.
- the thickness of the active metal compound layer is more preferably 1/40 or more and 1/20 or less with respect to the entire bonding layer.
- an extremely thin active metal compound layer in the bonding layer is formed at the bonding interface with a high area ratio (occupancy).
- the reason why an active metal compound layer having such a small thickness but a large area is formed is that an alloyed active metal brazing material is applied.
- the active metal at the atomic level quickly moves to the bonding interface, and forms a compound phase with the ceramic substrate while covering the bonding interface densely. Since the content of the active metal is low, the thickness is thin, but a highly durable bonding layer is formed by covering the bonding interface with high efficiency.
- the thickness of the entire bonding layer is not particularly limited with respect to the thickness of the active metal compound layer described above, and is adjusted according to the thickness and volume of the active metal brazing material to be used.
- the bonding layer is preferably 5 ⁇ m or more and 50 ⁇ m or less in order to secure the bonding force while reducing the height of the circuit board as much as possible.
- the bonding layer in the present invention is preferably dense with few voids.
- the void is a space (void) without a relatively small metal. Voids affect the strength of the bonding layer when present in excess.
- the gas in the void repeats thermal expansion and contraction, there is a risk of inducing cracks in the peripheral portion.
- the porosity is preferably 5% or less. Of course, 0% is most preferable. This void ratio can be calculated by, for example, observing the structure of an arbitrary cross section of the bonding layer and measuring the void area ratio based on the image. It can also be easily measured by an ultrasonic flaw detection method.
- a ceramic circuit that has a long life and suppresses copper peeling and substrate cracking by having a bonding layer on which an active metal compound layer of a suitable form is formed. It is a substrate.
- the constituent material of the ceramic substrate is not particularly limited, but any of aluminum nitride, silicon nitride, alumina, zirconia, lanthanum boride, boron nitride, silicon carbide, and graphite is preferable. Further, there is no particular restriction on the thickness of the ceramic substrate. It can be appropriately selected in consideration of the heat dissipation characteristics required for the module to be used.
- Copper circuit and copper heat sink joined to a ceramic substrate this is comprised with a copper-type material, and the copper-type material is copper or a copper alloy.
- Copper includes pure copper, oxygen-free copper, tough pitch copper, and the like. Examples of the copper alloy include a Cu—Mo alloy and a Cu—Fe—P alloy.
- the thickness of the copper circuit and the copper heat sink is not limited in the present invention.
- a ceramic circuit board for a power module has a demand for thick copper for improving the heat dissipation capability, and tends to increase the thickness of the copper circuit and the copper heat sink. Specifically, it is required to increase the thickness of the copper circuit and the copper heat sink from about 0.4 mm to 0.8 mm to 1.2 mm.
- the present invention can meet such demands for thick copper.
- the thickness of the copper circuit and the thickness of the copper heat sink may be the same or different. However, if the respective volumes are different, the circuit board has different heat dissipation properties on the front and back sides.
- the copper heat radiating plate is generally flat, but the copper circuit is formed according to the structure of the semiconductor element to be mounted. Therefore, regarding the thickness of the copper circuit and the copper heatsink, when the volume ratio (copper circuit / copper heatsink) is 0.5 or more and 2 or less, the circuit board has a uniform heat dissipation and a good thermal expansion balance. .
- the circuit board manufacturing method provides a composite material in which an active metal brazing material obtained by alloying a brazing material component and an active metal is clad on one side of a copper plate material made of a copper-based material, and ceramics After arranging the composite material so that the active metal brazing material is in contact with both surfaces of the substrate, the composite material is heated to melt the active metal brazing material, and the copper plate material is joined to both surfaces of the ceramic substrate. It is a manufacturing method of a ceramic circuit board which has a process.
- the method for manufacturing a ceramic circuit board according to the present invention uses a composite material in which an active metal brazing material is clad on a copper plate, and bonds this to a ceramic substrate under appropriate bonding conditions. And Therefore, this composite material will be described.
- the copper plate constituting the composite material a plate material made of the above-described copper-based material is used.
- the thickness and dimensions of the copper plate can be the same as the thickness of the copper circuit and the copper heat sink of the ceramic circuit board to be manufactured.
- the active metal brazing material clad on the copper plate should be a precursor of a bonding layer composed of a brazing material layer and an active metal compound layer. Therefore, as described above, the active metal brazing material to be clad comprises Ag as an essential component, and a brazing material component composed of at least two kinds of metals and at least one kind of active metals. As the brazing filler metal component other than Ag, those containing at least one of Cu, Sn, In, Ni, Si, and Li are preferable.
- the active metal includes at least one of Ti, Zr, Hf, Nb, Ta, V, Cr, Y, Al, and Mo.
- the active metal brazing material contains Cu
- the active metal brazing material is preferably contained in an amount of 20 wt% to 40 wt% with respect to the active metal brazing material.
- the total content of the active metal is preferably 0.5% by mass or more and 2.0% by mass or less, and more preferably 1.0% by mass or more and 2.0% by mass or less with respect to the active metal brazing material.
- an Ag—Cu—Ti alloy Cu: 20% by mass to 40% by mass, Ti: 0.5% by mass to 2% by mass, balance Ag
- Ag—Cu -Ti-Sn alloy Cu: 20 mass% to 40 mass%, Ti: 1.0 mass% to 2.0 mass%, Sn: 1.2 mass% to 6.0 mass% balance Ag
- Ag—Cu—Ti—Zr—Sn alloy Cu: 20 mass% to 40 mass%, Ti: 1 mass% to 2 mass%, Zr: 0.2 mass% to 2.0 mass%, Sn: 1.2 mass% or more and 6.0 mass% or less, remainder Ag
- the bonding layers are Ag—Cu—Ti alloy, Ag—Cu—Ti—Sn alloy, Ag—Cu—Ti—Zr—Sn alloy, Ag—Cu alloy, Ag At least one of a —Cu—Sn alloy and an Ag—Cu—Zr alloy is included.
- an Ag—Cu—Ti—Sn alloy Cu: 20 mass% to 40 mass%, Ti: 1.0 mass% to 2.0 mass%, Sn: 1.2 mass) % To 6.0% by mass or the balance (Ag), a relationship in which Sn / Ti is 1.2 or more and 5.0 or less is established between the amount of the active metal Ti and the amount of the additive element Sn. Particularly preferred.
- Sn / Ti the workability of the active metal brazing material to be clad can be ensured. Thereby, the active metal brazing material can be thinned.
- the thickness of the active metal brazing material in the composite material is preferably 5 ⁇ m or more and 50 ⁇ m or less. If the thickness is less than 5 ⁇ m, the brazing material is insufficient and a bonding layer having bonding properties cannot be formed. When the thickness exceeds 50 ⁇ m, there is a possibility that the brazing material may be protruded as well as hindering a reduction in the height of the circuit board.
- the shape of the active metal brazing material clad on the copper plate is not particularly specified, but it is preferable that the active metal brazing material is clad on the entire surface of the copper plate.
- the manufactured composite material is a material in which the copper circuit and the copper heat sink are integrated with the active metal brazing material
- the composite material can be further processed.
- a copper heat sink is often a rectangular flat plate
- a copper heat sink can often be made by manufacturing a flat composite material and bonding it directly to a ceramic substrate.
- the copper circuit needs to have a circuit shape corresponding to the semiconductor chip before mounting.
- the composite material applied in the present invention can be processed into a circuit shape by pressing and punching before being bonded to the ceramic substrate.
- the composite material bonded to one surface of the ceramic substrate can be processed so that its planar shape becomes a circuit shape. That is, since the pasty brazing material which is the prior art has fluidity, it is difficult to prepare and fix the shape of the brazing material before joining a copper circuit having a complicated shape. Therefore, in the formation of a copper circuit in the conventional method, it is common to form a circuit by bonding a planar copper plate to a ceramic substrate and then etching the copper plate. However, chemical and electrochemical metal melting processes such as etching are expected to be difficult to cope with thick copper in the future. On the other hand, since the composite material used in the present invention is a solid metal, it can be formed by pressing or punching. And this process can be implemented before joining to a ceramic substrate. Thereby, the manufacturing efficiency of the ceramic circuit board can be greatly increased.
- the composite material manufactured and prepared as described above is disposed on both surfaces of the ceramic substrate and heated to join the composite material.
- the bonding condition by the active metal brazing material is required to express the structure of the bonding layer (thickness and bonding area of the active metal compound layer) described above.
- the atmosphere is a vacuum atmosphere (1 ⁇ 10 ⁇ 2 Pa or less) or a rare gas atmosphere.
- the bonding temperature is required to be within a range of + 15 ° C. or higher and + 25 ° C. or lower with respect to the melting point of the active metal brazing material.
- This joining temperature is the temperature of the active metal brazing material and the temperature of the material to be joined. Under such strict condition management, the bonding layer having the above-described preferable configuration is formed. In the composite material joining step, it is sufficient to heat the active metal brazing material to the above temperature. However, for convenience, both the composite material and the ceramic substrate may be placed in the above atmosphere.
- a ceramic circuit board can be obtained by bonding the composite material and the ceramic board as described above. As described above, if the composite material to be a copper circuit is formed into a circuit shape before being joined to the ceramic substrate, a circuit board provided with the copper circuit can be obtained immediately. However, it does not deny that a planar composite material is bonded to a ceramic substrate and then a copper circuit is formed by etching or the like. According to the present invention, the ceramic circuit board and the manufacturing method thereof do not limit the thickness of the copper circuit. Therefore, when the copper circuit is thin or depending on the shape of the copper circuit, it may be more efficient to perform the etching process after joining the composite material and the ceramic substrate.
- the ceramic circuit board according to the present invention has improved the durability of the bonding layer by optimizing the composition and structure of the bonding layer. Peeling and substrate cracking are suppressed. This structure of the bonding layer cannot be formed by the prior art. This is due to the appropriate use of an alloyed active metal brazing material not conventionally used in the field of manufacturing ceramic circuit boards.
- a composite material obtained by previously clad a copper plate serving as a copper circuit / copper heat dissipation plate and an active metal brazing material is applied. As a result, an efficient ceramic circuit board can be manufactured.
- an Ag—Cu—Ti—Sn alloy (Cu: 28.0% by mass, Ti: 2.0% by mass, Sn: 5.0% by mass) is produced as an active metal brazing material. It was processed into a tape material and clad-bonded to a copper plate.
- an alloy ingot having the above composition was produced by melting casting, and the ingot was subjected to a plurality of combinations of annealing and cold rolling to produce a tape-shaped active metal brazing material.
- the produced tape-shaped active metal brazing material and the prepared tape-shaped copper plate (made of oxygen-free copper) were clad-joined with a rolling roll.
- the tape-like clad material was cut to obtain a composite material. This composite material had a size of 20 mm ⁇ 20 mm, an active metal brazing material thickness of 20 ⁇ m, and a copper plate thickness of 0.8 mm.
- a substrate (21 mm ⁇ 21 mm, thickness 0.32 mm) made of silicon nitride (Si 3 N 4 ) was used as the ceramic substrate.
- the composite material produced above was fixed on both sides of this ceramic substrate and joined in a vacuum furnace.
- the bonding conditions were a vacuum atmosphere (3 ⁇ 10 ⁇ 3 Pa), a bonding temperature of 790 ° C. (melting point of the brazing material + 20 ° C.), and held for 20 minutes after reaching the bonding temperature.
- a ceramic circuit board was manufactured by heating and cooling. The manufactured ceramic circuit board had a thickness of 20 ⁇ m in any bonding layer.
- Comparative Example In order to compare with the ceramic circuit board manufactured in the first embodiment, a ceramic circuit board was manufactured using a paste-like active metal brazing material.
- the pasty active metal brazing material used in this comparative example is obtained by dispersing AgCu alloy powder, Sn powder, and TiH 2 powder in an organic solvent. The particle diameters of these metal powders and compound powders were those having a sieve opening of 45 ⁇ m or less.
- the composition ratio of each metal was Cu: 27 mass%, Ti: 2 mass%, Sn: 3 mass%, and Ag: balance. Then, the same ceramic substrate as the embodiment (Si 3 N 4), was coated with the paste-like brazing material (coating area 20 mm ⁇ 20 mm).
- a copper plate made of the same oxygen-free copper as in the present embodiment was placed on the surface of the applied paste-like brazing material. Then, it hold
- FIG. 2 shows a cross-sectional photograph of the vicinity of the bonding layer between the ceramic substrate and the copper circuit.
- EDX analysis was performed on the cross section of the bonding layer.
- the interface between the bonding layer and the ceramic substrate was analyzed with a magnification of 500 times and an acceleration voltage of 15 kV.
- a plurality of locations were analyzed for two bonding layers (a bonding layer between the ceramic substrate and the copper circuit and a bonding layer between the ceramic substrate and the copper heat sink).
- FIG. 3 shows the result of Ti mapping. From FIG.
- the bonding area of the active metal compound layer was calculated.
- the measurement was performed on the basis of the Ti mapping image illustrated in FIG. 3 while regarding the width of the active metal compound layer as the bonding area of the metal compound layer.
- the portion where Ti is not present (the black portion in FIG. 3) at the interface between the bonding layer and the ceramic is the region where the active metal compound layer is not present. Judged.
- the total width (number of pixels) of the region having no active metal compound layer was subtracted from the number of horizontal pixels (256 pixels) of the entire image, and the result was taken as the width of the active metal compound layer. Further, the width of the active metal compound layer was divided by the lateral width of the entire image to obtain the ratio of the bonding area of the active metal compound layer.
- the thickness of the active metal compound layer at the bonding interface of the circuit board manufactured in this embodiment was also measured.
- EDX analysis was performed at a magnification of 3000 times, and the thickness of the active metal compound layer was determined by measuring the thickness at an arbitrary plurality of locations in a region where Ti was present.
- the average thickness of the active metal compound layer of this embodiment was 0.80 ⁇ m. Therefore, the thickness of the active metal compound layer was 0.04 with respect to the entire bonding layer.
- the porosity is 0%
- the bonding layer is a dense without voids. It was confirmed that
- the structure itself of the bonding layer was substantially the same as in this embodiment, and a brazing filler metal layer and an active metal compound layer were observed.
- the ratio of the bonding area of the active metal compound layer to the bonding area of the bonding layer was calculated by the same method as in this embodiment, and it was 58%.
- the thickness of the active metal compound layer was 0.6 ⁇ m.
- the porosity was 10%.
- the thermal cycle test in the present embodiment is a test in which the operation of holding and heating and cooling in each of the low temperature region ( ⁇ 50 ° C.) and the high temperature region (150 ° C.) for 30 minutes is performed as 1000 cycles. And about the ceramic circuit board after 1000 cycles, the presence or absence of peeling of a copper plate was evaluated with the ultrasonic flaw detector.
- Second Embodiment Here, a circuit board was manufactured using a plurality of active metal brazing materials having different compositions. In the same manner as in the first embodiment, an active metal brazing material having a composition described in Table 1 below was manufactured to manufacture a composite material. And the circuit board was manufactured similarly to 1st Embodiment.
- the thickness of the active metal brazing material is set to the first embodiment. While making it thinner (15 ⁇ m), the joining temperature was raised (the melting point of the brazing material + 25 ° C.).
- the appearance of the manufactured circuit board was first evaluated to confirm the presence or absence of peeling near the bonding layer and the presence of brazing material. Similarly to the first embodiment, the cross section of the bonding layer was observed to measure the thickness of the bonding layer and the thickness of the active metal compound layer (both were average values), and the ratio between the two was calculated.
- thermal cycle test for evaluating the durability of the bonding layer was performed.
- the test conditions were the same as in the first embodiment.
- the above examination results are shown in Table 1.
- the thickness of the active metal brazing material is too thin or too thick (No. 3, No. 4) as a production condition, peeling of the bonding layer or rising of the brazing material occurs. It was confirmed that the thickness needs to be considered. Further, when the content of the active metal (Ti) in the active metal brazing is less than 0.5% by mass, the active metal content in the bonding layer is insufficient, and peeling occurs (No. 8). In this case, the thickness of the active metal compound layer is extremely thin.
- the ceramic circuit board according to the present invention has improved bonding strength and durability of the bonding layer to the ceramic substrate, and the peeling of the copper circuit and the copper heat sink and the cracking of the board when subjected to thermal stress and thermal cycle are suppressed. ing.
- the present invention is suitable as a circuit board for various power modules used in hybrid cars, vehicles, power generation facilities, and the like. It is also possible to handle power modules that are expected to have higher density and higher output.
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Abstract
Description
接合層の成分組成について、接合層を構成する金属元素は、Agを必須成分とする少なくとも2種以上のろう材成分と、少なくとも1種の活性金属である。これらの成分は、セラミックス回路基板の製造で適用された活性金属ろう材合金に由来する金属元素である。
ろう材成分とは、混合又は合金化することで比較的低温で溶融することができる2種以上の金属成分であって、凝固することでろう材層を形成する金属である。ろう材層は、銅回路又は銅放熱板と活性金属化合物層とを接合して、一体化されたセラミックス回路基板を形成する作用を有する。ろう材成分は2種以上の金属からなり、共晶組成を有する金属の組み合わせを少なくとも一つ有する金属群である。本発明では、ろう材成分としてAgを必須の成分とする。活性金属法において、Agを主成分とするろう材(銀ろう)が多く用いられていること、及び、接合層の熱伝導性向上を考慮したからである。
活性金属は、セラミック基板とろう材層とを接合するための活性金属化合物層を生成するための成分である。活性金属は、接合工程において、セラミックス基板との接合界面へ移動し、セラミックス中のO、N、Si等と反応して活性金属化合物層を形成する。活性金属としては、Ti、Zr、Hf、Nb、Ta、V、Cr、Y、Al、Moの少なくともいずれか1種の金属元素を含む。これらの金属元素は、セラミックスの構成元素との反応活性に優れると共に、形成された活性金属間化合物とろう材層(Ag、Cu)との接合性も良好であることによる。活性金属として特に好ましいのは、Ti、Zrである。
接合層は、ろう材層と活性金属化合物層とで構成されている。本発明は、上述した接合層の成分組成上の特徴に加えて、接合層の構造、特に、接合界面に形成された活性金属化合物層の形態においても特徴がある。
ろう材層は、上記したろう材成分で構成された合金層である。例えば、ろう材成分としてAgとCuを適用したとき、ろう材層は、Ag-Cu合金からなる。このAg-Cu合金は、Ag相又はAgを主成分とする合金相(α相)と、Cu相又はCuを主成分とする合金相(β相)とが混合する材料組織を有する。また、Ag、Cu以外のろう材成分(Sn、In等)を含む場合、当該ろう材成分は、上記のAg相、α相、Cu相、β相のいずれかと合金化するか、別に合金相を形成してろう材層内に分散する、或いは、活性金属と合金相を形成してろう材層内に分散する。
活性金属化合物層とは、Ti等の活性金属とセラミックス中のO、N、Si等と結合して生成する層状の化合物である。また、活性金属化合物層は、添加剤であるSn、In、Ni、Si、Liの少なくともいずれかが任意的に含まれる。従って、活性金属化合物層の成分は一定ではなく、接合するセラミックスの種類や添加元素の量によって変化する。本発明では、活性金属化合物層の定義として、活性金属を必須的に含み、接合界面に接する化合物層とする。本発明では、接合層に含まれる全ての活性金属が界面で化合物層を形成するとは限らず、一部の活性金属はろう材層の内部に分散する化合物相を形成することがある。このような分散する化合物相は、前記定義に基づき、本発明における活性金属化合物層には該当しない。
以上説明したように、本発明では、好適な形態の活性金属化合物層が形成された接合層を有することにより、高寿命で銅の剥離や基板の割れが抑制されたセラミックス回路基板としている。ここで、セラミックス基板の構成材料は特に限定されるものではないが、窒化アルミニウム、窒化ケイ素、アルミナ、ジルコニア、ホウ化ランタン、窒化ホウ素、炭化ケイ素、グラファイトのいずれかが好ましい。また、セラミック基板の厚さについては、特に規定はない。使用するモジュールに要求される放熱特性を考慮して適宜に選択できる。
また、セラミックス基板に接合する銅回路及び銅放熱板について、これは銅系材料で構成される、銅系材料とは、銅又は銅合金である。銅には、純銅、無酸素銅、タフピッチ銅等が含まれる。銅合金としては、Cu-Mo合金、Cu-Fe-P合金等が挙げられる。
次に、本発明に係るセラミックス回路基板の製造方法について説明する。これまで繰返し述べたように、本発明では、セラミックス基板に銅回路及び銅放熱板を接合する際、ろう材成分と活性金属が合金化されたバルク状の活性金属ろう材を使用する。ここで、バルク状の活性金属ろう材の供給形態については、予め、当該活性金属ろう材を、銅回路及び銅放熱板を形成するための銅板に接合(クラッド)した複合材料を使用することで、回路基板の製造の効率化を図ることができる。
本実施形態では、活性金属ろう材として、Ag-Cu-Ti-Sn合金(Cu:28.0質量%、Ti:2.0質量%、Sn:5.0質量%)を製造し、これをテープ材に加工して銅板にクラッド接合した。活性金属ろう材の製造は、上記組成の合金インゴットを溶解鋳造にて製造し、インゴットについて焼鈍と冷間圧延との組み合わせを複数行ってテープ状の活性金属ろう材を製造した。そして、製造したテープ状の活性金属ろう材と、用意していたテープ状の銅板(無酸素銅製)とを圧延ロールにてクラッド接合した。このテープ状のクラッド材を切断して複合材料を得た。この複合材料は、寸法20mm×20mmで活性金属ろう材の厚さが20μmで銅板の厚さが0.8mmであった。
セラミックス基板として窒化ケイ素(Si3N4)からなる基板(21mm×21mm、厚さ0.32mm)を使用した。このセラミックス基板の両面に上記で製造した複合材料を固定し真空炉中で接合した。接合条件は、真空雰囲気(3×10-3Pa)、接合温度790℃(ろう材融点+20℃)とし、接合温度到達から20分保持した。加熱後冷却してセラミックス回路基板を製造した。製造したセラミックス回路基板は、いずれの接合層も厚さが20μmであった。
製造したセラミックス回路基板について、接合層の断面構造をSEM観察した。その一例として、図2に、セラミックス基板と銅回路との間における接合層付近の断面写真を示した。次に、接合層の断面についてEDX分析を行った。EDX分析は、倍率500倍、加速電圧15kVとし、接合層のセラミックス基板との界面を分析した。このとき、2つの接合層(セラミックス基板と銅回路との間の接合層と、セラミックス基板と銅放熱板との間の接合層)について、複数個所を分析した。この分析結果の一例として、図3にTiのマッピングの結果を示した。図3から、接合層のセラミックス基板側界面において、Tiが富化した層が存在していることが確認され、この層を活性金属化合物層と同定した。また、このEDX分析において、Ag、Cu、Sn、Si、Nの各元素についての分析も行っており、接合層内で活性金属化合物層の上(銅回路又は銅放熱板の方向)に、Ag、Cu、Snのろう材成分からなるろう材層が形成されていることを確認している。
次に、本実施形態及び比較例のセラミックス回路基板について、接合層の耐久性を評価するために、熱サイクル試験を行った。本実施形態での熱サイクル試験は、低温域(-50℃)と高温域(150℃)のそれぞれに30分保持して加熱冷却する操作を1サイクルとしてこれを1000サイクル実施する試験である。そして、1000サイクル後のセラミックス回路基板について、銅板の剥離の有無を超音波探傷器により評価した。
Claims (10)
- セラミックス基板と、
前記セラミックスの一方の面に接合層を介して接合された銅系材料からなる銅回路と、
前記セラミックスの他方の面に接合層を介して接合された銅系材料からなる銅放熱板よりなるセラミックス回路基板において、
前記接合層は、Agを必須成分とすると共に少なくとも2種以上の金属からなるろう材成分と、少なくとも1種以上の活性金属成分とからなり、前記活性金属の含有量が、接合層全体の金属元素量に対して0.5質量%以上2.0質量%以下となっており、
前記接合層は、前記ろう材成分からなるろう材層と前記活性金属を含む活性金属化合物層とからなり、前記活性金属化合物層が前記セラミックス基板との接合界面に沿って形成されており、
更に、前記接合層と前記セラミックス基板との接合面積に占める、前記活性金属化合物層と前記セラミックス基板との接合面積の割合が、88%以上であることを特徴とするセラミックス回路基板。 - ろう材成分として、Cu、Sn、In、Ni、Si、Liの少なくともいずれかを含む請求項1記載のセラミックス回路基板。
- 活性金属として、Ti、Zr、Hf、Nb、Ta、V、Cr、Y、Al、Moの少なくともいずれかを含む請求項1又は請求項2記載のセラミックス回路基板。
- 活性金属化合物層の厚さが、接合層全体に対して1/40以上1/10以下である請求項1~請求項3のいずれかに記載のセラミックス回路基板。
- 接合層の厚さは、5μm以上50μm以下である請求項1~請求項4のいずれかに記載のセラミックス回路基板。
- 接合層は、Ag-Cu-Ti合金、Ag-Cu-Ti-Sn合金、Ag-Cu-Ti-Zr-Sn合金、Ag-Cu合金、Ag-Cu-Sn合金、Ag-Cu-Zr合金の少なくともいずれかを含む請求項1~請求項5のいずれかに記載のセラミックス回路基板。
- セラミックス基板は、窒化アルミニウム、窒化ケイ素、アルミナ、ジルコニア、ホウ化ランタン、窒化ホウ素、炭化ケイ素、グラファイトのいずれかよりなる請求項1~請求項6のいずれかに記載のセラミックス回路基板。
- 請求項1~請求項7のいずれかに記載のセラミックス回路基板の製造方法であって、
銅系材料からなる銅板材の片面に、ろう材成分と活性金属とが合金化してなる活性金属ろう材をクラッドした複合材料を用意し、
セラミックス基板の両面に、前記活性金属ろう材が接するように前記複合材料を配置した後、
前記複合材料を加熱して前記活性金属ろう材を溶融し、前記銅板材を前記セラミックス基板の両面に接合する工程を有する、セラミックス回路基板の製造方法。 - 活性金属ろう材は、Ag-Cu-Ti合金、Ag-Cu-Ti-Sn合金、Ag-Cu-Ti-Zr-Sn合金からなる請求項8記載のセラミックス回路基板の製造方法。
- セラミックス基板の一方の面に接合する複合材料は、その平面形状が回路形状となるように加工されている請求項8又は請求項9記載のセラミックス回路基板の製造方法。
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US16/097,383 US10485112B2 (en) | 2016-06-10 | 2017-06-08 | Ceramic circuit substrate and method for producing ceramic circuit substrate |
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Cited By (17)
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WO2019159219A1 (ja) * | 2018-02-13 | 2019-08-22 | 三菱マテリアル株式会社 | 銅/チタン/アルミニウム接合体、絶縁回路基板、ヒートシンク付き絶縁回路基板、パワーモジュール、ledモジュール、熱電モジュール |
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CN109315061B (zh) | 2021-08-06 |
KR102129339B1 (ko) | 2020-07-03 |
JPWO2017213207A1 (ja) | 2019-04-18 |
CN109315061A (zh) | 2019-02-05 |
US10485112B2 (en) | 2019-11-19 |
EP3471517A1 (en) | 2019-04-17 |
TW201813462A (zh) | 2018-04-01 |
KR20180133474A (ko) | 2018-12-14 |
TWI658757B (zh) | 2019-05-01 |
US20190150298A1 (en) | 2019-05-16 |
EP3471517A4 (en) | 2019-06-05 |
JP6564944B2 (ja) | 2019-08-21 |
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