CN112447616A - 一种新型SiC IGBT器件一体化底板结构 - Google Patents
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Abstract
本发明涉及SiC IGBT器件的底板,具体为一种新型SiC IGBT器件一体化底板结构。一种新型SiC IGBT器件一体化底板结构,包括底板本体,底板本体的上表面连接有陶瓷基板,陶瓷基板的上表面连接有铜层,底板本体与陶瓷基板间、陶瓷基板与铜层间均通过活性金属钎焊工艺实现连接,形成一体化底板结构。底板本体与陶瓷基板以及陶瓷基板与铜层之间通过活性钎焊工艺连接,熔点由采用的活性金属决定,解决了现有底板与陶瓷覆铜板的焊接层熔点低问题,能有效发挥SiC IGBT器件在178℃以上高温环境中的应用优势;相较于传统的“底板+DBC结构”,去除了DBC下铜层,获得更低的热膨胀系数,更高的热导率,减小了热阻,提高了散热效率。
Description
技术领域
本发明涉及SiC IGBT器件的底板,具体为一种新型SiC IGBT器件一体化底板结构。
背景技术
SiC作为第三代半导体材料,禁带宽度是Si材料的3倍,使其能够在更高的温度下工作;临界击穿电场是Si材料的10倍,使其能满足更高的电压需求;热导率是Si材料的3倍,使其具有更低的结壳热阻。特别是近年来,SiC晶体品质和SiC器件工艺技术日益成熟,使其成为制备新型大功率低功耗电力电子器件的理想材料。然而,受限于封装技术,目前,SiCIGBT器件的封装仍采用Si基功率器件的封装形式,由底板、陶瓷覆铜板(DBC)、电极、顶盖、外壳等部件构成,其中,底板与陶瓷覆铜板采用焊片通过真空回流焊的方式实现连接。
Si基IGBT器件封装工艺中,第一步进行Si芯片与陶瓷覆铜板的连接,采用铅锡银材质(PbSnAg)焊片焊接形成1~3μm厚的金属间化合物实现硅基芯片与DBC间连接,焊片的熔点为280℃;第二步底板与DBC覆铜层下表面采用组分不同的铅锡银材质焊片(PbSnAg)进行真空回流焊形成1~3μm厚的金属间化合物实现底板与DBC间连接,焊片的熔点为178℃。
SiC基IGBT器件的封装仍采用Si基功率器件的封装形式,底板与陶瓷覆铜板的焊接质量会显著影响热量传递的效率,如果存在焊接空洞,由于空气的热传导系数远低于金属焊料的传热系数,热阻会显著增加;同时,由于底板与陶瓷覆铜板的焊接面积大,真空回流焊工艺过程复杂,难以控制。而SiC芯片与陶瓷覆铜板的连接采用纳米银烧结工艺,熔点大于900℃,但底板与陶瓷覆铜板的焊接层熔点通常为178℃。当SiC基IGBT器件工作于200℃以上的高温环境中,底板与陶瓷覆铜板的焊接层会出现熔化现象,严重限制了SiC基IGBT器件在高温条件下的使用,难以发挥SiC IGBT器件的高温特性优势。
发明内容
本发明针对目前SiC IGBT器件封装工艺中,底板与子单元陶瓷覆铜板仍采用硅基IGBT器件封装形式的真空回流焊,焊层熔点为178℃;当SiC基IGBT器件工作于200℃以上的高温环境中,底板与陶瓷覆铜板的焊接层会出现熔化现象,造成SiC基IGBT器件失效,难以发挥SiC IGBT器件的高温特性优势的问题。本发明通过设计一种一体化SiC IGBT器件底板结构,采用活性金属钎焊工艺(AMB),取消底板与子单元间焊料真空回流焊接工艺,避免在高温条件下应用时焊料熔化的问题。
本发明是采用如下的技术方案实现的:一种新型SiC IGBT器件一体化底板结构,包括底板本体,底板本体的上表面连接有陶瓷基板,陶瓷基板的上表面连接有铜层,底板本体与陶瓷基板间、陶瓷基板与铜层间均通过活性金属钎焊工艺实现连接,形成一体化底板结构。底板本体与陶瓷基板以及陶瓷基板与铜层之间通过活性钎焊工艺连接,熔点由采用的活性金属决定,解决了现有底板与陶瓷覆铜板的焊接层熔点低问题,能有效发挥SiCIGBT器件在178℃以上高温环境中的应用优势。
上述的一种新型SiC IGBT器件一体化底板结构,底板本体的材质为铝碳化硅或铜。
上述的一种新型SiC IGBT器件一体化底板结构,底板本体下表面具有一定的弧度,上表面为平面。
上述的一种新型SiC IGBT器件一体化底板结构,陶瓷基板材质为氮化铝、氮化硅或氧化铝。
上述的一种新型SiC IGBT器件一体化底板结构,底板本体的边角位置设置有安装孔。
上述的一种新型SiC IGBT器件一体化底板结构,陶瓷基板材质为氮化铝、氮化硅或氧化铝,底板本体的边角位置设置有安装孔。
上述的一种新型SiC IGBT器件一体化底板结构,该一体化底板形成后再进行芯片的纳米银烧结工艺实现一体化底板与芯片间的连接。
上述的一种新型SiC IGBT器件一体化底板结构, SiC芯片通过纳米银烧结层固定在一体化底板的铜层上,SiC芯片、纳米银烧结层、底板共同构成SiC IGBT器件的散热通道。
本发明提出了一种新型SiC IGBT器件一体化底板结构,能够有效降低芯片到底板热阻,提高散热效率,同时降低SiC IGBT器件封装工艺难度,提高生产效率,解决由于底板与陶瓷覆铜板的焊接层熔点低导致的难以178℃以上高温环境中的应用的问题,有利于发挥SiC IGBT器件高温特性优势。
附图说明
图1为一体化底板结构示意图。
图2为SiC IGBT器件封装示意图。
图中:1.1:底板本体,1.2:陶瓷基板,1.3:铜层,1.4:安装孔。
1:一体化底板,2:纳米银烧结层,3:SiC芯片。
具体实施方式
本发明提出了一种新型SiC IGBT器件一体化底板结构,能够有效降低芯片与底板间热阻,提高散热效率,同时降低SiC IGBT器件封装工艺难度,提高生产效率,解决由于底板与陶瓷覆铜板的焊接层熔点低导致的其不能再大于178℃以上高温条件下应用的问题,有利于发挥SiC IGBT器件高温特性优势。
如图1所示,一种新型SiC IGBT器件一体化底板结构,由底板本体1.1、陶瓷基板1.2、铜层1.3、安装孔1.4构成。底板本体材质为铝碳化硅或铜,底板本体下表面具有一定的弧度,上表面为平面。陶瓷基板材质为氮化铝、氮化硅或氧化铝。底板本体1.1与陶瓷基板1.2间、陶瓷基板1.2与铜层1.3间均通过活性金属钎焊工艺实现高温冶金结合连接,形成一体化底板结构。一体化底板形成后再进行芯片的纳米银烧结工艺实现一体化底板与芯片间的连接。
如图2所示,SiC芯片3通过纳米银烧结层2固定在一体化底板1的铜层上,SiC芯片3、纳米银烧结层2、底板1共同构成SiC IGBT器件的散热通道。
相较于传统SiC 器件,本发明提出的一种新型SiC IGBT器件底板结构具有以下优点:
(1)一体化底板结构取代了传统的“底板+DBC结构”,相较于传统的“底板+DBC结构”,去除了DBC下铜层(传统DBC结构包括下铜层、中间陶瓷层和上铜层)及DBC下铜层与底板间的焊接层结构,获得更低的热膨胀系数,更高的热导率,减小了热阻,提高了散热效率;同时降低了DBC制造成本。
(2)相较于传统SiC 器件封装工艺,在封装时省去了复杂的DBC与底板的
焊接工艺,极大的降低的SiC IGBT器件封装工艺难度,提高了生产效率,降低了生产成本。
(3)由于底板本体与陶瓷基板以及陶瓷基板与铜层之间通过活性钎焊工艺连接,熔点由采用的活性金属决定,解决了现有底板与陶瓷覆铜板的焊接层熔点低问题,能有效发挥SiC IGBT器件在178℃以上高温环境中的应用优势。
Claims (8)
1.一种新型SiC IGBT器件一体化底板结构,包括底板本体(1.1),其特征在于:底板本体(1.1)的上表面连接有陶瓷基板(1.2),陶瓷基板(1.2)的上表面连接有铜层(1.3),底板本体(1.1)与陶瓷基板(1.2)间、陶瓷基板(1.2)与铜层(1.3)间均通过活性金属钎焊工艺实现连接,形成一体化底板(1)结构。
2.根据权利要求1所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:底板本体(1.1)的材质为铝碳化硅或铜。
3.根据权利要求2所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:底板本体(1.1)下表面具有一定的弧度,上表面为平面。
4.根据权利要求1或2或3所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:陶瓷基板(1.2)材质为氮化铝、氮化硅或氧化铝。
5.根据权利要求1或2或3所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:底板本体(1.1)的边角位置设置有安装孔(1.4)。
6.根据权利要求1或2或3所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:陶瓷基板(1.2)材质为氮化铝、氮化硅或氧化铝,底板本体(1.1)的边角位置设置有安装孔(1.4)。
7.根据权利要求3所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:该一体化底板形成后再进行芯片的纳米银烧结工艺实现一体化底板与芯片间的连接。
8.根据权利要求7所述的一种新型SiC IGBT器件一体化底板结构,其特征在于:SiC芯片(3)通过纳米银烧结层(2)固定在一体化底板(1)的铜层(1.3)上,SiC芯片(3)、纳米银烧结层(2)、底板(1)共同构成SiC IGBT器件的散热通道。
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09121004A (ja) * | 1995-06-23 | 1997-05-06 | Toshiba Corp | 複合セラミックス基板 |
JPH09172247A (ja) * | 1995-12-20 | 1997-06-30 | Toshiba Corp | セラミックス回路基板およびその製造方法 |
JP2006041231A (ja) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | セラミック回路基板および電気装置 |
JP2006263774A (ja) * | 2005-03-24 | 2006-10-05 | Toshiba Corp | はんだ材とそれを用いた半導体装置 |
US20070160858A1 (en) * | 2003-09-25 | 2007-07-12 | Kabushiki Kaisha Toshiba | Ceramic circuit board, method for making the same, and power module |
CN202454549U (zh) * | 2012-02-17 | 2012-09-26 | 北京卫星制造厂 | 一种基于铝基碳化硅的陶瓷封装功率元器件散热结构 |
JP2015018843A (ja) * | 2013-07-09 | 2015-01-29 | 三菱電機株式会社 | 電力用半導体装置の製造方法および電力用半導体装置 |
CN104409425A (zh) * | 2014-11-13 | 2015-03-11 | 河北中瓷电子科技有限公司 | 高导热氮化硅陶瓷覆铜板及其制备方法 |
US20190150298A1 (en) * | 2016-06-10 | 2019-05-16 | Tanaka Kikinzoku Kogyo K.K. | Ceramic circuit substrate and method for producing ceramic circuit substrate |
CN210432010U (zh) * | 2019-03-18 | 2020-04-28 | 江西品升电子有限公司 | 一种高散热的单面覆铜板 |
CN211929252U (zh) * | 2020-04-23 | 2020-11-13 | 江苏富乐德半导体科技有限公司 | 一种无线充电线圈 |
-
2020
- 2020-11-19 CN CN202011306255.2A patent/CN112447616A/zh active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09121004A (ja) * | 1995-06-23 | 1997-05-06 | Toshiba Corp | 複合セラミックス基板 |
JPH09172247A (ja) * | 1995-12-20 | 1997-06-30 | Toshiba Corp | セラミックス回路基板およびその製造方法 |
US20070160858A1 (en) * | 2003-09-25 | 2007-07-12 | Kabushiki Kaisha Toshiba | Ceramic circuit board, method for making the same, and power module |
JP2006041231A (ja) * | 2004-07-28 | 2006-02-09 | Kyocera Corp | セラミック回路基板および電気装置 |
JP2006263774A (ja) * | 2005-03-24 | 2006-10-05 | Toshiba Corp | はんだ材とそれを用いた半導体装置 |
CN202454549U (zh) * | 2012-02-17 | 2012-09-26 | 北京卫星制造厂 | 一种基于铝基碳化硅的陶瓷封装功率元器件散热结构 |
JP2015018843A (ja) * | 2013-07-09 | 2015-01-29 | 三菱電機株式会社 | 電力用半導体装置の製造方法および電力用半導体装置 |
CN104409425A (zh) * | 2014-11-13 | 2015-03-11 | 河北中瓷电子科技有限公司 | 高导热氮化硅陶瓷覆铜板及其制备方法 |
US20190150298A1 (en) * | 2016-06-10 | 2019-05-16 | Tanaka Kikinzoku Kogyo K.K. | Ceramic circuit substrate and method for producing ceramic circuit substrate |
CN210432010U (zh) * | 2019-03-18 | 2020-04-28 | 江西品升电子有限公司 | 一种高散热的单面覆铜板 |
CN211929252U (zh) * | 2020-04-23 | 2020-11-13 | 江苏富乐德半导体科技有限公司 | 一种无线充电线圈 |
Non-Patent Citations (2)
Title |
---|
王征等: "宽禁带电力电子器件关键封装材料研究进展", 《电力电子技术》 * |
秦振忠等: "CPCA标准《有机陶瓷基覆铜箔层压板》介绍", 《印制电路信息》 * |
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