WO2016147243A1 - パワーモジュール,電力変換装置,および車両用駆動装置 - Google Patents
パワーモジュール,電力変換装置,および車両用駆動装置 Download PDFInfo
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- WO2016147243A1 WO2016147243A1 PCT/JP2015/057409 JP2015057409W WO2016147243A1 WO 2016147243 A1 WO2016147243 A1 WO 2016147243A1 JP 2015057409 W JP2015057409 W JP 2015057409W WO 2016147243 A1 WO2016147243 A1 WO 2016147243A1
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- switching element
- power module
- power
- diode
- switching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/64—Electric machine technologies in electromobility
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/60—Other road transportation technologies with climate change mitigation effect
- Y02T10/7072—Electromobility specific charging systems or methods for batteries, ultracapacitors, supercapacitors or double-layer capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02T90/10—Technologies relating to charging of electric vehicles
- Y02T90/12—Electric charging stations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02T90/10—Technologies relating to charging of electric vehicles
- Y02T90/14—Plug-in electric vehicles
Definitions
- the present invention relates to a power module, a power conversion device, and a vehicle drive device.
- a semiconductor device chip is mounted as a switching element of the power converter.
- Silicon (Si) has been generally used as a material for semiconductor devices.
- an IGBT Insulated Gate Bipolar Transistor
- SiC silicon carbide
- SiC-MOSFETs Metal Oxide Semiconductor Field Transistors
- SiC-MOSFETs Metal Oxide Semiconductor Field Transistors
- Threshold voltage is one of the characteristics of switching elements.
- the threshold voltage is a gate voltage when a current of a certain level flows through the switching element.
- an n-channel MOSFET is normally in an off state, but is turned on when a positive voltage higher than a threshold voltage is applied to the gate.
- Patent Document 1 when a wide band gap semiconductor is used as a semiconductor switching element, it is difficult to stably manufacture because a high temperature environment is required at the time of manufacturing, and there are individual variations in gate threshold voltage.
- a technique for reducing the leakage current of the switching element by controlling the drive voltage based on the detected value of the leakage current of the switching element is disclosed for individual variations in the gate threshold voltage.
- Multiple switching elements may be mounted in the power module. For example, a current of several tens of amperes can flow through a chip of a semiconductor device, but a large capacity of several hundreds of amperes is required for railway vehicle applications, etc., so power can be achieved by connecting multiple chips in parallel. Ensure the allowable current as a module.
- the gate drive voltage since the gate drive voltage is controlled, the gate drive voltage is similarly applied to the switching element group connected in parallel to the switching element group connected in parallel. As a result, variations in the gate threshold voltage cannot be compensated.
- An object of the present invention is to compensate for a difference in threshold voltage between a plurality of switching elements mounted in a power module.
- the present invention solves the above-mentioned problems by mounting a switching element having a higher threshold voltage than other switching elements at a location where the temperature is higher during operation than the location where the other switching elements are mounted. To do.
- the present invention it is possible to compensate for a difference in threshold voltage between a plurality of switching elements mounted on a power module. As a result, a high-performance power converter and a high-performance vehicle drive device can be provided.
- FIG. 2 is a plan view of an insulating substrate mounted on the power module of FIG. 1. It is an example (1 in 1 module) of the circuit diagram of the power module of Example 1. FIG. It is an example (2 in 1 module) of the circuit diagram of the power module of Example 1. FIG. It is sectional drawing of the example (in the case of DMOSFET) of the switching element mounted on the insulating substrate of Example 1. (A) is a DMOSFET, and (b) is a trench structure MOSFET. It is sectional drawing of the example (in the case of trench structure MOSFET) of the switching element mounted on the insulating substrate of Example 1.
- FIG. 1 is a vehicle drive device according to a first embodiment.
- FIG. 1 is a vehicle drive device according to a first embodiment. It is a block diagram of the protection system of the power converter device of Example 1.
- FIG. 6 is a plan view of an insulating substrate of Example 2.
- FIG. 7 is a plan view of a drain wiring pattern of Example 3.
- FIG. It is a top view of the power module and cooling system of Example 4.
- FIG. 1 is a plan view of a power module 100 according to an embodiment of the present invention.
- the power module 100 includes a heat dissipation base 101 and two insulating substrates 102.
- the insulating substrate 102 is joined to the heat dissipation base 101 with solder or the like.
- the power module 100 has a sealing resin that covers the insulating substrate 102.
- a plurality of insulating substrates 102 can be mounted on the heat dissipation base 101 to increase the current capacity of the power module 100.
- the number of insulating substrates 102 mounted on the heat dissipation base 101 can be one, or three or more. Moreover, it is also possible to increase the current capacity of the power converter by connecting a plurality of power modules 100 in parallel.
- FIG. 2 is a plan view of the insulating substrate 102 of the power module 100 shown in FIG.
- a gate wiring pattern 104 On the insulating substrate 102, a gate wiring pattern 104, a source sense wiring pattern 105, a drain wiring pattern 106, and a source wiring pattern 107 are formed on the insulating layer 103.
- a drain wiring pattern 106 On the drain wiring pattern 106, four first switching elements 108a and four second switching elements 108b are joined by solder or the like.
- the four first switching elements 108a and the four second switching elements 108b can be joined with sintered metal.
- the first switching element 108a and the second switching element 108b are SiC-MOSFETs.
- the second switching element 108b has a threshold voltage higher than that of the first switching element 108a.
- the threshold voltage of the second switching element 108b being higher than that of the first switching element 108a is based on a comparison of the specific threshold voltages of the second switching element 108b and the first switching element 108a.
- the threshold voltage of the second switching element 108b is higher than that of the first switching element 108a at room temperature (25 ° C.). Note that when there is no need to distinguish between the first switching element 108a and the second switching element 108b, they are referred to as switching elements 108.
- the switching element 108 is a chip, and in this embodiment is a square with a side of 8 mm.
- the size of the switching element 108 is not limited to the above, and can be a square having a side of 5 mm to 20 mm, for example, or a rectangle.
- two rows of chips are arranged in the order of the first switching element 108a, the second switching element 108b, the second switching element 108b, and the first switching element 108a. Yes.
- the distance X between the adjacent switching elements 108 in each row is 5 mm.
- the distance Y between the rows is 25 mm.
- the distance Y which is the horizontal distance between the rows is large, there is almost no movement of heat between the rows, and the influence of the heat generated from the switching devices 108 on the other switching devices 108 is different for each row.
- the first switching element 108a is disposed at both ends of each column, and the second switching element 108b having a threshold voltage higher than that of the first switching element 108a is disposed near the center of each column. The That is, the second switching element 108b having a threshold voltage higher than that of the first switching element 108a is sandwiched between other adjacent switching elements 108.
- the first switching element 108a having a lower threshold voltage than the second switching element 108b is not disposed between the other switching elements 108. Therefore, the second switching element 108b has more adjacent switching elements 108 than the first switching element 108a. Further, the second switching element 108b having a threshold voltage higher than that of the first switching element 108a is disposed closer to the center of the insulating substrate 102, which is likely to become high temperature when the power conversion device operates.
- Each switching element 108 is connected to the gate wiring pattern 104, the source sense wiring pattern 105, and the source wiring pattern 107 through the gate wire 109, the source sense wire 110, and the source wire 111.
- the eight switching elements 108 are connected in parallel. Since the switching element 108 is a MOSFET and has a built-in diode, the built-in diode of the switching element 108 can be used as a freewheeling diode, and the power converter can be operated without mounting an external freewheeling diode. it can.
- FIG. 3A and 3B are circuit diagrams of the power module 100 shown in FIG. 3A and 3B show the connection relationship of the eight switching elements 108 on each insulating substrate 102 in the power module 100.
- FIG. 3A and 3B are circuit diagrams of the power module 100 shown in FIG. 3A and 3B show the connection relationship of the eight switching elements 108 on each insulating substrate 102 in the power module 100.
- FIG. 3A and 3B show the connection relationship of the eight switching elements 108 on each insulating substrate 102 in the power module 100.
- FIG. 3A shows an example of a 1 in 1 module.
- the current capacity can be increased by connecting two insulating substrates 102 in parallel.
- the gate electrodes of 16 switching elements 108 are connected to the control terminal 301.
- the main circuit terminal 302 and the main circuit terminal 303 are connected to the source-drain path of the switching element 108.
- a 2-in-1 module can be obtained by electrically short-circuiting the source of one insulating substrate 102 and the drain of the other insulating substrate 102.
- the gate electrodes of the eight switching elements 108 on one insulating substrate 102 are connected to the control terminal 304, and the gate electrodes of the eight switching elements 108 on the other insulating substrate 102 are connected. Is connected to the control terminal 305.
- the main circuit terminal 306, the main circuit terminal 307, and the main circuit terminal 308 are connected to the source-drain path of the switching element 108.
- the MOSFET Since the MOSFET has a characteristic that the threshold voltage becomes lower as the temperature is higher, if the threshold voltage at the same temperature is the same for all chips, the chip placed closer to the center is not the other during the operation of the power converter.
- the threshold voltage decreases as the temperature rises due to heat from the chip. Therefore, variation in the current flowing between the chips occurs due to the difference in the change amount of the threshold voltage due to the difference in temperature.
- the threshold voltage is lowered by the heat from other chips, so that the current is further increased, the amount of heat generation is increased, and the threshold voltage is further decreased. As a result, the current between the chips is reduced. Variation will increase.
- the second switching element 108b disposed near the center of the column during the operation of the power conversion apparatus is replaced with the first switching element 108a disposed at both ends of the column.
- the threshold voltage at the same temperature is higher in the second switching element 108b than in the first switching element 108a. The difference in threshold voltage between the elements 108a is compensated, and current variation is suppressed.
- FIG. 4A shows an example of a vertical MOSFET having a DMOS (Double Diffuse Metal Oxide Semiconductor) structure
- FIG. 4B shows an example of a vertical MOSFET having a trench structure.
- DMOS Double Diffuse Metal Oxide Semiconductor
- the N + layer 402 and the P layer 403 are connected to the source electrode 401.
- the P layer 403 is in contact with the gate insulating film 404 and the N ⁇ layer 405 responsible for ensuring the breakdown voltage
- the gate insulating film 404 is in contact with the gate electrode 406, and N ⁇ Layer 405 is formed on N + substrate layer 407.
- the N + substrate layer 407 is connected to the drain electrode 408.
- the switching element 108 is a SiC-MOSFET
- the N + substrate layer 407 is an N + type silicon carbide substrate
- the N ⁇ layer 405 is an N ⁇ type silicon carbide epitaxial layer
- the P layer 403 is This is a P-type body region.
- the switching element 108 is a SiC-MOSFET, but the switching element 108 may be a nitride semiconductor element formed of a nitride semiconductor layer.
- the threshold voltage can be increased. Since the voltage between the drain electrode 408 and the source electrode 401 decreases until the current reaches a steady state, there is a period in which both the voltage and the current are not zero, and there is a power loss calculated by the product of the voltage and the current. appear. Similarly, power loss occurs at turn-off, and further, power loss occurs due to the electrical resistance between the drain electrode 408 and the source electrode 401 while the current flowing between the drain electrode 408 and the source electrode 401 is settled to a steady value. .
- the time required for switching can be shortened by reducing the capacitance between the drain electrode 408 and the gate electrode 406, and the power loss can be reduced.
- the current peak value at the time of switching also increases, and the current variation increases when the threshold voltages are different.
- the reduction of power loss during switching and the suppression of current variation are in a trade-off relationship, but in this embodiment, the threshold value due to the difference in temperature between the switching element 108a and the switching element 108b during operation of the power conversion device.
- the trade-off can be eliminated, reducing both power loss and current variation. Therefore, when the switching element 108 is a trench MOSFET, the performance of the power module 100 can be further improved.
- the MOSFET functions as a built-in diode having a source as an anode and a drain as a cathode.
- the switching element 108 generates heat. Therefore, when the built-in diode of the switching element 108 is used as a freewheeling diode as in the power module 100 of the present embodiment, the performance of the power module 100 can be further improved.
- FIG. 5A and 5 (b) show circuit diagrams of a vehicle drive device provided with the power module 101 of this embodiment.
- FIG. 5A shows an example in the case of having a 1 in 1 module
- FIG. 5B shows an example in the case of having a 2 in 1 module.
- 5A and 5B includes a power converter 501 and a motor 502 as a load.
- the motor 502 can rotate driving wheels of a railway vehicle or automobile.
- the power conversion device 501 includes, as a circuit, switching element groups S1 to S6, a diode, and a capacitor C for stabilizing the supplied power supply voltage VCC.
- the diodes are built in the switching element groups S1 to S6.
- an inductor is not shown, but the inductance of the motor 502 as a load can be used.
- the switching element groups S1 to S6 are switching element groups each configured by connecting a plurality of switching elements 108 in parallel.
- the switching element groups S3 to S6 are described with one switching element as a representative for easy understanding of the drawing.
- the gate drive circuits GD1 to GD6 are gate drive circuits that drive the switching element groups S1 to S6.
- one power module 100 is mounted in each of the switching element groups S1 to S6.
- one power module 100 is mounted for the switching element group S1 and the switching element group S2, and one power module is mounted for the switching element group S3 and the switching element group S4.
- One power module 100 is mounted on the group S5 and the switching element group S6.
- Switching element groups S1 to S6 are repeatedly turned on and off by signals output from gate drive circuits GD1 to GD6. There are three sets of two switching element groups connected in series, which are connected in parallel to the power supply voltage VCC. Wiring is connected to a motor 502 as a load from a connection point between each group of switching elements.
- Two switching element groups (for example, S1 and S2) connected in series do not turn on at the same time.
- the switching element group S1 is turned off, the switching element group S2 is turned on after a certain time called a dead time has elapsed.
- a current flows through the built-in diode of the switching element group S1 or the switching element group S2 according to the direction of the load current.
- the switching element groups S3 and S4 and the switching element groups S5 and S6 are same applies to the switching element groups S3 and S4 and the switching element groups S5 and S6.
- the power converter 501 converts DC power into three-phase AC power and supplies the power to the motor 502 that is a load. If the operation becomes unstable even in one of the switching element groups S1 to S6, the power conversion device 501 cannot supply power suitable for the motor 502 as a load. In the power conversion device 501 of this embodiment, since the switching element groups S1 to S6 operate stably by the above-described threshold voltage compensation, high reliability of the power conversion device and the vehicle drive device can be realized.
- FIG. 6 shows a block diagram of a protection system of the power conversion device 501 of the present embodiment.
- the temperature and current of the switching element 108 are detected and input to the control circuit, and alarm output and gate drive voltage control are performed based on the calculation result. For example, when overheating or overcurrent occurs, the operation of the power converter 501 can be stopped by turning off all the switching elements 108.
- a current detector such as a shunt resistor or a current transformer (CT) can be used. From the current detector, a sense current that is about several thousand to several ten thousandths of the main current flowing between the drain wiring pattern 106 and the source wiring pattern 107 is output through the source sense wiring pattern 105.
- CT current transformer
- the main current can be estimated by detecting the sense current using a current detector. Further, by incorporating a current sense element and a temperature detection element in each switching element 108, the protection system can monitor the threshold voltage compensation status due to the temperature difference between the switching elements 108 connected in parallel. is there.
- FIG. 7 shows the arrangement of each chip on the insulating substrate of this example.
- the switching element 108 since the built-in diode of the switching element 108 is used as the freewheeling diode, a separate diode chip is not necessary.
- the diode 112 is formed on the insulating substrate 102 as shown in FIG. Is installed separately.
- the switching element 108 is not limited to a MOSFET.
- the switching element 108 can be an element having a function of switching current on and off, such as an IGBT (insulated gate bipolar transistor).
- IGBT insulated gate bipolar transistor
- the mounting of the switching element 108 is the same as in the first embodiment.
- the diode 112 is joined to the drain wiring pattern 106 formed on the insulating substrate 102 with solder or the like so that the cathode of the diode 112 and the drain of the switching element 108 are electrically connected.
- the anode of the diode 112 is connected to the source wiring pattern 107 through the anode wire 113 and is electrically connected to the source of the switching element 108.
- Three switching elements 108 are arranged in a horizontal row, and there are two chip arrangements in which two diodes 112 are arranged vertically next to each other on two places on the insulating substrate 102. As in the first embodiment, the switching elements 108 are arranged in rows. Since the horizontal distance between them is large, the influence of heat generated from the switching element 108 can be considered independently for each column. In each row, the switching element 108 disposed at the second position from the left in FIG. 7 sandwiched between the two switching elements 108 and the third position from the left in FIG. 7 sandwiched between the diode 112 and the switching element 108.
- the switching element 108 is more likely to have a higher temperature during operation due to heat generated from an adjacent chip than the switching element 108 arranged at the left end in FIG. Accordingly, the first switching element 108a is arranged at the left end, and the second switching element 108b having a threshold voltage higher than that of the first switching element 108a is the second and third from the left closer to the center than the first switching element 108a. Place in the second position.
- the power module 100 is configured by joining the insulating substrate 102 on the heat dissipation base 101 with solder or the like as in the first embodiment.
- a current flows through the switching element 108 or the diode 112
- power loss occurs, and the heat energy is dissipated from the back surface of the heat dissipation base 101 to a heat sink or the like.
- the second switching element 108b disposed closer to the center has a higher temperature than the first switching element 108a disposed at the left end, but the threshold voltage at the same temperature is the first switching element 108b. Since the switching element 108a is higher than the switching element 108a, a difference in threshold voltage is compensated during operation, and current variation is suppressed. This improves the reliability of the power conversion device.
- the adjacent of the switching element 108 will be described by changing the chip arrangement from the first and second embodiments.
- FIG. 8 shows the chip arrangement of this example.
- Four switching elements 108 are joined to the drain wiring pattern 106 by solder or the like.
- the first switching element 108a, the second switching element 108b having a threshold voltage higher than the first switching element 108a, the second switching element 108b, and the first switching element 108a are arranged in this order.
- a circle having the center as an intersection of diagonal lines drawn on the chip and a diameter twice as long as the diagonal line drawn on the chip is defined, and circles are drawn as dotted lines CI1 to CI4. It was.
- the temperature of the switching element 108 at the center of the circle is likely to rise due to the influence of heat generated from the other switching elements 108.
- FIG. 8 there are two other switching elements 108 in the circle CI2 and the circle CI3 surrounding the second switching element 108b, and one other other in the circles CI1 and CI4 surrounding the first switching element 108a.
- the threshold voltage difference is compensated by heat generation during the operation of the power converter.
- the diameters of the circles CI1 to CI4 are set to be twice the length of the diagonal line of the chip, and if there are other switching elements in each circle, they are defined as adjacent switching elements.
- the size of can be determined by estimating the effect of heat generation from each switching element through experiments and computer experiments.
- the chip is square, but when the chip is rectangular, for example, the rectangular chip is the center, the direction along the long side of the rectangle is the long axis, and the short side of the rectangle is along. Whether or not the switching elements are adjacent to each other can be determined using an ellipse whose direction is the minor axis.
- FIG. 9 is a plan view of the power conversion device and the cooling system of this embodiment.
- silicon grease or the like is applied on the heat sink 114, and the power module 900 is fixed to the heat sink 114 with screws or the like from the applied silicon grease or the like.
- a cooling fan 115 is provided as a cooler near the heat sink 114.
- the chip disposed on the leeward side of the cooling air from the cooling fan 115 that is an air-cooled cooler is likely to be hotter during the operation of the power conversion device than the chip disposed on the windward side.
- the first switching element 108a ′ is disposed on the leeward side
- the second switching element 108b ′ having a threshold voltage higher than that of the first switching element 108a ′ is disposed on the leeward side.
- the threshold voltage difference is compensated for during operation of the power converter, and current variation is suppressed.
- the power converter can be made highly reliable.
- the power conversion device of this embodiment can be applied to a vehicle drive device, and the vehicle drive device can be highly reliable.
- 100 power module
- 101 heat dissipation base
- 102 insulating substrate
- 103 insulating layer
- 104 gate wiring pattern
- 105 source sense wiring pattern
- 106 drain wiring pattern
- 107 source wiring pattern
- 108 switching element
- 108a first switching element
- 108b second switching element
- 109 gate wire
- 110 source sense wire
- 111 source wire
- 112 diode
- 113 anode wire
- 114 heat sink
- 115 cooling fan.
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Abstract
Description
Claims (15)
- 第1スイッチング素子と、
前記第1スイッチング素子と並列に接続され、前記第1スイッチング素子よりも閾値電圧が高い第2スイッチング素子と、を有し、
前記第2スイッチング素子の方が前記第1スイッチング素子よりも、動作中に高温になる箇所に実装されていることを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記第2スイッチング素子のチャネル長は、前記第1スイッチング素子のチャネル長よりも長いことを特徴とするパワーモジュール。 - 請求項1に記載のパワーモジュールにおいて、
前記第1スイッチング素子および前記第2スイッチング素子は、SiC-MOSFETであることを特徴とするパワーモジュール。 - 請求項3に記載のパワーモジュールを有し、
前記第1スイッチング素子の内蔵ダイオードおよび前記第2スイッチング素子の内蔵ダイオードが、還流ダイオードであることを特徴とする電力変換装置。 - 請求項4に記載の電力変換装置からモータへ電力を供給する車両用駆動装置。
- 空冷の冷却器と、
前記冷却器に実装されている請求項1に記載のパワーモジュールと、を有し、
前記第1スイッチング素子が、前記第2スイッチング素子よりも前記冷却器からの冷却風の風上側に実装されていることを特徴とする電力変換装置。 - 第1スイッチング素子と、
前記第1スイッチング素子よりも閾値電圧が高い第2スイッチング素子と、
前記第1スイッチング素子および前記第2スイッチング素子が実装されている絶縁基板と、を有し、
前記第2スイッチング素子の方が前記第1スイッチング素子よりも、前記絶縁基板の中央寄りに実装されていることを特徴とするパワーモジュール。 - 請求項7に記載のパワーモジュールにおいて、
前記第2スイッチング素子に隣接するスイッチング素子の数が、前記第1スイッチング素子に隣接するスイッチング素子の数よりも多いことを特徴とするパワーモジュール。 - 請求項7に記載のパワーモジュールにおいて、
ダイオードが前記絶縁基板に実装されていることを特徴とするパワーモジュール。 - 請求項9に記載のパワーモジュールを有し,
前記ダイオードが還流ダイオードであることを特徴とする電力変換装置。 - 請求項7に記載のパワーモジュールを有し、
前記第1スイッチング素子の内蔵ダイオードおよび前記第2スイッチング素子の内蔵ダイオードが、還流ダイオードであることを特徴とする電力変換装置。 - 第1スイッチング素子と、
第2スイッチング素子と、
前記第1スイッチング素子および前記第2スイッチング素子よりも閾値電圧の高い第3スイッチング素子と、を有し、
前記第1スイッチング素子と前記第2スイッチング素子との間に、前記第3スイッチング素子が実装されていることを特徴とするパワーモジュール。 - 請求項12に記載のパワーモジュールにおいて、
前記第1スイッチング素子、前記第2スイッチング素子、および前記第3スイッチング素子は、SiC素子であることを特徴とするパワーモジュール。 - 請求項12に記載のパワーモジュールにおいて、
前記第1スイッチング素子、前記第2スイッチング素子、および前記第3スイッチング素子は、窒化物半導体素子であることを特徴とするパワーモジュール。 - 請求項12に記載のパワーモジュールを有し、
前記第1スイッチング素子の内蔵ダイオードおよび前記第2スイッチング素子の内蔵ダイオードが、還流ダイオードであることを特徴とする電力変換装置。
Priority Applications (4)
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PCT/JP2015/057409 WO2016147243A1 (ja) | 2015-03-13 | 2015-03-13 | パワーモジュール,電力変換装置,および車両用駆動装置 |
DE112015004772.7T DE112015004772T5 (de) | 2015-03-13 | 2015-03-13 | Leistungsmodul, elektrische Leistungsumsetzungsvorrichtung und Antriebsgerät für ein Fahrzeug |
US15/527,089 US10115700B2 (en) | 2015-03-13 | 2015-03-13 | Power module, electrical power conversion device, and driving device for vehicle |
JP2017505759A JP6356904B2 (ja) | 2015-03-13 | 2015-03-13 | パワーモジュール,電力変換装置,および車両用駆動装置 |
Applications Claiming Priority (1)
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US (1) | US10115700B2 (ja) |
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JP2018143030A (ja) * | 2017-02-27 | 2018-09-13 | トヨタ自動車株式会社 | 電力変換装置の製造方法 |
US10978588B2 (en) | 2019-09-04 | 2021-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device |
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CN113097154A (zh) * | 2021-03-22 | 2021-07-09 | 西安交通大学 | 一种双向开关功率模块及其制备方法 |
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JP2005175074A (ja) * | 2003-12-09 | 2005-06-30 | Nissan Motor Co Ltd | 半導体装置 |
JP2011243847A (ja) * | 2010-05-20 | 2011-12-01 | Mitsubishi Electric Corp | 半導体装置 |
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JP3853612B2 (ja) * | 2001-06-06 | 2006-12-06 | 松下電器産業株式会社 | 減衰器 |
JP2006296032A (ja) | 2005-04-07 | 2006-10-26 | Sumitomo Electric Ind Ltd | 電力変換器 |
WO2007007670A1 (ja) * | 2005-07-08 | 2007-01-18 | Matsushita Electric Industrial Co., Ltd. | 半導体装置および電気機器 |
JP4988784B2 (ja) * | 2009-03-30 | 2012-08-01 | 株式会社日立製作所 | パワー半導体装置 |
JP5395009B2 (ja) * | 2010-07-30 | 2014-01-22 | 株式会社半導体理工学研究センター | サブスレッショルドsramのための電源電圧制御回路及び制御方法 |
KR20160130222A (ko) * | 2014-01-17 | 2016-11-10 | 유니버시티 오브 버지니아 페이턴트 파운데이션, 디/비/에이 유니버시티 오브 버지니아 라이센싱 & 벤처스 그룹 | 오프셋 보상된 제로 검출 및 피크 인덕터 전류 제어를 구비한 낮은 입력 전압 부스트 컨버터 |
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- 2015-03-13 WO PCT/JP2015/057409 patent/WO2016147243A1/ja active Application Filing
- 2015-03-13 JP JP2017505759A patent/JP6356904B2/ja active Active
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005175074A (ja) * | 2003-12-09 | 2005-06-30 | Nissan Motor Co Ltd | 半導体装置 |
JP2011243847A (ja) * | 2010-05-20 | 2011-12-01 | Mitsubishi Electric Corp | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018143030A (ja) * | 2017-02-27 | 2018-09-13 | トヨタ自動車株式会社 | 電力変換装置の製造方法 |
US10978588B2 (en) | 2019-09-04 | 2021-04-13 | Kabushiki Kaisha Toshiba | Semiconductor device |
Also Published As
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JP6356904B2 (ja) | 2018-07-11 |
US20180026009A1 (en) | 2018-01-25 |
JPWO2016147243A1 (ja) | 2017-06-22 |
US10115700B2 (en) | 2018-10-30 |
DE112015004772T5 (de) | 2017-08-24 |
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