CN113097154A - 一种双向开关功率模块及其制备方法 - Google Patents
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Abstract
本发明公开了一种双向开关功率模块及其制备方法,覆铜基板DBC的一侧表面依次设置有驱动端子、碳化硅MOSFET芯片和功率端子,碳化硅MOSFET芯片包括多个且间隔设置,多个碳化硅MOSFET芯片之间两两一组并联连接形成两个不同方向的电力电子开关,每个碳化硅MOSFET芯片的栅极和源极分别经驱动电阻与驱动端子连接,多个碳化硅MOSFET芯片设置在同一片铜基板上,源极分别与功率端子连接,形成共漏极连接。本发明具有更高的工作频率,更好的可靠性,更低的热阻及良好的电气性能。
Description
技术领域
本发明属于功率器件封装技术领域,具体涉及一种双向开关功率模块及其制备方法。
背景技术
碳化硅作为第三代半导体材料,具有三倍于硅的禁带宽度及热导率、十倍于硅的击穿场强等优良性能。因此具有更高的电压阻断能力,更低的通态压降,更高的开关速度、更高的工作温度和更低的热阻。因此,与硅功率器件相比,碳化硅功率器件具有更小的导通和开关损耗,且具有更高的工作温度。基于碳化硅MOSFET的双向开关功率模块可以具有更高的工作温度,更高的封装集成度及更高的可靠性。
双向开关能够控制两个方向的电流传输,是矩阵变换器的核心组件。矩阵变换器由9个双向开关搭接而成。通过对9个开关的合适控制,它还可以在控制输出电压的同时,控制输入电流,使功率因数可控。它是研究得最多的一种拓扑,和传统的变换器相比,它具有如下优点:输出电压的幅值和频率可以独立控制;不需要中间直流储能环节,能量转换效率高;能够四象限运行;具有优良的输入电流波形和输出电压波形;可自由控制的功率因数。
但是目前的矩阵变换器电路往往使用分立器件搭建,集成度较低,体积较大、功率密度低,且不符合目前电力电子方向模块化、集成化的发展趋势。为了提高矩阵变换器的集成度、减小变换器体积,就需要提出一种集成化的双向开关功率模块。
发明内容
本发明所要解决的技术问题在于针对上述现有技术中的不足,提供一种双向开关功率模块及其制备方法,实现更高的工作频率,更好的可靠性,更低的热阻及良好的电气性能。
本发明采用以下技术方案:
一种双向开关功率模块,包括覆铜基板DBC,覆铜基板DBC的一侧表面依次设置有驱动端子、碳化硅MOSFET芯片和功率端子,碳化硅MOSFET芯片包括多个且间隔设置,多个碳化硅MOSFET芯片之间两两一组并联连接形成两个不同方向的电力电子开关,每个碳化硅MOSFET芯片的栅极和源极分别经驱动电阻与驱动端子连接,多个碳化硅MOSFET芯片设置在同一片铜基板上,源极分别与功率端子连接,形成共漏极连接。
具体的,覆铜基板DBC包括陶瓷,陶瓷的一侧设置有下铜层,另一侧对应设置有上铜层,驱动端子、碳化硅MOSFET芯片和功率端子分别设置在上铜层上。
进一步的,上铜层上设置有漏极导电铜基板,漏极导电铜基板的两侧分别设置有驱动侧导电铜基板和源极导电铜基板,碳化硅MOSFET芯片设置在漏极导电铜基板上,通过键合线分别与驱动侧导电铜基板和源极导电铜基板连接。
更进一步的,驱动电阻与驱动端子设置在驱动侧导电铜基板上。
更进一步的,功率端子设置在源极导电铜基板上。
更进一步的,碳化硅MOSFET芯片与驱动侧导电铜基板和源极导电铜基板之间分别通过键合线连接。
具体的,碳化硅MOSFET芯片包括4个。
本发明的另一技术方案是,一种制备双向开关功率模块的方法,包括以下步骤:
S1、对覆铜基板DBC进行清洁,在覆铜基板DBC上对应碳化硅MOSFET芯片和驱动电阻的位置处采用钢网印刷方式印制一层纳米银焊膏,将碳化硅MOSFET芯片和驱动电阻贴附于纳米银焊膏层上;
S2、将步骤S1印刷好纳米银焊膏的覆铜基板DBC放入真空烧结炉中进行回流焊接;
S3、将步骤S2烧结完成的覆铜基板DBC取出,在覆铜基板DBC上对应功率端子和驱动端子的位置处印刷纳米银焊膏,采用加热方式分别焊接功率端子和驱动端子;
S4、对步骤S3焊接完成的覆铜基板DBC上的碳化硅MOSFET芯片到电极区域进行引线键合;
S5、使用环氧树脂对步骤S4完成引线键合的覆铜基板DBC进行塑封,制备得到双向开关功率模块。
具体的,步骤S2中,真空烧结的温度为25~300℃,时间为1~2h。
具体的,步骤S3中,加热温度为25~300℃。
与现有技术相比,本发明至少具有以下有益效果:
本发明一种双向开关功率模块,覆铜基板DBC的一侧表面依次设置有驱动端子、碳化硅MOSFET芯片和功率端子,多个碳化硅MOSFET芯片设置在同一片铜基板上,通过对模块内部的合理布局,驱动回路之间具有高度的对称性,从而减少了电流分布不均的问题;驱动端子和功率端子对应设置在覆铜基板DBC的两侧,功率端子均位于覆铜基板DBC一侧,功率回路面积小,从而减小了功率回路的寄生电感。
进一步的,陶瓷的一侧设置有下铜层用于散热,另一侧对应设置有上铜层用于导电,具有极好的热循环性、形状稳定、刚性好、导热率高、可靠性高,覆铜面可以刻蚀出各种图形的特点,能够提高金属层的导电性能和承受大电流的能力。
进一步的,在铜层上分别设置漏极导电铜基板、驱动侧导电铜基板和源极导电铜基板,通过漏极导电铜基板将需要共漏芯片的漏极连起来,通过驱动侧导电铜基板和源极导电铜基板连接端子,连接可靠,集成度高。
进一步的,驱动电阻与驱动端子设置在驱动侧导电铜基板上,能够减小驱动回路的寄生电感。
进一步的,功率端子设置在源极导电铜基板上,通过固定功率端子实现键合连接。
进一步的,碳化硅MOSFET芯片与驱动侧导电铜基板和源极导电铜基板之间分别通过键合线连接,采用键合线实现互连,可根据模块的实际工作电流选择线径及数量。
进一步的,使用4片碳化硅MOSFET芯片,芯片之间两两并联以提升通流能力
一种制备双向开关功率模块的方法,碳化硅MOSFET芯片及电极端子与覆铜基板DBC之间的互连材料为纳米银焊膏,纳米银焊膏具有熔点高、电导率和热导率高、工艺温度低等优点,可以通过低温烧结技术实现功率半导体芯片的连接,烧结过程中使用纳米银焊膏,能够降低芯片焊接的空洞率,减小热阻,提高模块的散热能力,增强模块可靠性。
进一步的,真空烧结的温度为25~300℃,时间为1~2h,保证烧结质量,致密度高,孔洞率低,在真空烧结条件下,工艺操作简便,还可避免填料对烧结体表面的不利作用。
进一步的,对模块进行灌胶塑封,提高模块的绝缘强度。
综上所述,本发明具有更高的工作频率,更好的可靠性,更低的热阻及良好的电气性能。
下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。
附图说明
图1为DBC基板的主视图;
图2为DBC基板的后视图;
图3为DBC基板的侧视图;
图4为芯片和驱动电阻焊接完成后的模块示意图;
图5为芯片、驱动电阻和电极端子焊接完成后的模块示意图;
图6为完成引线键合后的模块示意。
其中:1.驱动侧导电铜基板;2.漏极导电铜基板;3.源极导电铜基板;4.下铜层;5.上铜层;6.陶瓷;7.驱动电阻;8.碳化硅MOSFET芯片;12.驱动端子;13.功率端子;14.键合线。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
应当理解,当在本说明书和所附权利要求书中使用时,术语“包括”和“包含”指示所描述特征、整体、步骤、操作、元素和/或组件的存在,但并不排除一个或多个其它特征、整体、步骤、操作、元素、组件和/或其集合的存在或添加。
还应当理解,在本发明说明书中所使用的术语仅仅是出于描述特定实施例的目的而并不意在限制本发明。如在本发明说明书和所附权利要求书中所使用的那样,除非上下文清楚地指明其它情况,否则单数形式的“一”、“一个”及“该”意在包括复数形式。
还应当进一步理解,在本发明说明书和所附权利要求书中使用的术语“和/或”是指相关联列出的项中的一个或多个的任何组合以及所有可能组合,并且包括这些组合。
在附图中示出了根据本发明公开实施例的各种结构示意图。这些图并非是按比例绘制的,其中为了清楚表达的目的,放大了某些细节,并且可能省略了某些细节。图中所示出的各种区域、层的形状及它们之间的相对大小、位置关系仅是示例性的,实际中可能由于制造公差或技术限制而有所偏差,并且本领域技术人员根据实际所需可以另外设计具有不同形状、大小、相对位置的区域/层。
请参阅图4、图5和图6,本发明提供了一种双向开关功率模块,包括1块覆铜基板DBC、功率端子13、驱动端子12、驱动电阻7以及碳化硅MOSFET芯片8,碳化硅MOSFET芯片8包括4块,依次间隔设置在覆铜基板DBC上,每块碳化硅MOSFET芯片8的栅极和源极通过键合线经驱动电阻7与驱动端子12连接,碳化硅MOSFET芯片8的源极经键合线14与功率端子13连接,通过引线键合形成具有双向导通功能的功率模块。
使用1200V/140A的碳化硅MOSFET芯片8,碳化硅MOSFET芯片8可在300℃下长期工作,最高温度可达600℃。
请参阅图1、图2和图3,覆铜基板DBC包括陶瓷6,陶瓷6的一侧设置有下铜层4,另一侧对应设置有上铜层5,上铜层5上分别设置有驱动侧导电铜基板1、漏极导电铜基板2和源极导电铜基板3,驱动电阻7和驱动端子12设置在驱动侧导电铜基板1上,碳化硅MOSFET芯片8依次间隔设置在漏极导电铜基板2上,功率端子13设置在源极导电铜基板3上,形成共漏极连接。
请参阅图6,四片碳化硅MOSFET芯片8两两一组并联以提升通流能力,形成两个不同方向的电力电子开关;碳化硅MOSFET芯片8的源极通过键合线14与源极导电铜基板3连接,栅极和源极通过键合线14与驱动侧导电铜基板1连接。
由于功率端子13和驱动端子12分别位于覆铜基板DBC的两侧,因此功率回路和驱动回路的面积得到了有效的减小,降低了功率回路和驱动回路的寄生电感,从而减小了开关损耗。同时可以注意到,对于互相并联的芯片,其驱动回路的布局是完全对称的,这样的对称结构可以最大限度地消除驱动回路寄生参数的不一致性,起到均流均温的效果。
本发明公开的双向开关功率模块,与分立器件相比,由于采用了模块化集成化的设计,在电气性能、热性能、可靠性以及安全防护等方面要优越很多。而由于使用了宽禁带的碳化硅MOSFET器件,相对于同电压等级的硅基器件,具有更低的导通电阻和更高的开关速度以及更低的热阻,从而具有更低的导通损耗以及开关损耗,因此效率更高且散热性能更好、可靠性更优。
本发明一种双向开关功率模块的制备方法,包括以下步骤:
S1、覆铜基板DBC的正面如图1所示,反面如图2所示,结构如图3所示。清洁覆铜基板DBC,在覆铜基板DBC上碳化硅MOSFET芯片及驱动电阻的对应位置利用钢网印刷的方式印制一层纳米银焊膏,将碳化硅MOSFET芯片和驱动电阻贴附于纳米银焊膏层上;
S2、将印刷好纳米银焊膏的覆铜基板DBC放入真空烧结炉中,设置合适的温度曲线进行回流焊接,碳化硅MOSFET芯片和驱动电阻焊接完成后示意图如图4所示。
真空烧结的温度为25~300℃(视纳米银焊膏的种类而定),时间为1~2小时(温度曲线由纳米银焊膏的种类而定)。
S3、将步骤S2完成烧结的覆铜基板DBC取出,在覆铜基板DBC上功率端子和驱动端子对应位置印刷纳米银焊膏,分别将功率端子和驱动端子放置于对应位置,并将覆铜基板DBC放置于加热台上加热,焊接端子;端子焊接完成后的模块示意图如图5所示。
加热温度为25~300℃。
S4、将步骤S3完成焊接的覆铜基板DBC取出,利用键合机完成碳化硅MOSFET芯片到电极区域的引线键合,引线键合完成后的模块示意图如图6所示;
S5、将完成引线键合的覆铜基板DBC放置在塑封模具中(覆铜基板DBC下方设置一片铜板用于散热,铜板充当模具的底部,用于散热),使用环氧树脂进行塑封,制备完成双向开关功率模块。
采用绝缘强度满足要求,具有防水、透明等性质的灌封胶,调配好灌封胶之后,先对其抽真空再进行塑封,采用绝缘强度满足要求,具有防水、透明等性质的灌封胶,如有机灌封胶195。
焊膏可以采用纳米烧结银,根据选用纳米烧结银的温度曲线进行真空烧结,烧结完成后熔点可达900℃,焊接空洞率极低,满足商业化产品芯片空洞率2%、DBC空洞率5%的要求。
综上所述,本发明一种双向开关功率模块及其制备方法,具有高可靠性,高功率密度,低寄生电感的优秀特性。
以上内容仅为说明本发明的技术思想,不能以此限定本发明的保护范围,凡是按照本发明提出的技术思想,在技术方案基础上所做的任何改动,均落入本发明权利要求书的保护范围之内。
Claims (10)
1.一种双向开关功率模块,其特征在于,包括覆铜基板DBC,覆铜基板DBC的一侧表面依次设置有驱动端子(12)、碳化硅MOSFET芯片(8)和功率端子(13),碳化硅MOSFET芯片(8)包括多个且间隔设置,多个碳化硅MOSFET芯片(8)之间两两一组并联连接形成两个不同方向的电力电子开关,每个碳化硅MOSFET芯片(8)的栅极和源极分别经驱动电阻(7)与驱动端子(12)连接,多个碳化硅MOSFET芯片(8)设置在同一片铜基板上,源极分别与功率端子(13)连接,形成共漏极连接。
2.根据权利要求1所述的双向开关功率模块,其特征在于,覆铜基板DBC包括陶瓷(6),陶瓷(6)的一侧设置有下铜层(4),另一侧对应设置有上铜层(5),驱动端子(12)、碳化硅MOSFET芯片(8)和功率端子(13)分别设置在上铜层(5)上。
3.根据权利要求2所述的双向开关功率模块,其特征在于,上铜层(5)上设置有漏极导电铜基板(2),漏极导电铜基板(2)的两侧分别设置有驱动侧导电铜基板(1)和源极导电铜基板(3),碳化硅MOSFET芯片(8)设置在漏极导电铜基板(2)上,通过键合线(14)分别与驱动侧导电铜基板(1)和源极导电铜基板(3)连接。
4.根据权利要求3所述的双向开关功率模块,其特征在于,驱动电阻(7)与驱动端子(12)设置在驱动侧导电铜基板(1)上。
5.根据权利要求3所述的双向开关功率模块,其特征在于,功率端子(13)设置在源极导电铜基板(3)上。
6.根据权利要求3所述的双向开关功率模块,其特征在于,碳化硅MOSFET芯片(8)与驱动侧导电铜基板(1)和源极导电铜基板(3)之间分别通过键合线(14)连接。
7.根据权利要求1所述的双向开关功率模块,其特征在于,碳化硅MOSFET芯片(8)包括4个。
8.一种制备权利要求1所述双向开关功率模块的方法,其特征在于,包括以下步骤:
S1、对覆铜基板DBC进行清洁,在覆铜基板DBC上对应碳化硅MOSFET芯片和驱动电阻的位置处采用钢网印刷方式印制一层纳米银焊膏,将碳化硅MOSFET芯片和驱动电阻贴附于纳米银焊膏层上;
S2、将步骤S1印刷好纳米银焊膏的覆铜基板DBC放入真空烧结炉中进行回流焊接;
S3、将步骤S2烧结完成的覆铜基板DBC取出,在覆铜基板DBC上对应功率端子和驱动端子的位置处印刷纳米银焊膏,采用加热方式分别焊接功率端子和驱动端子;
S4、对步骤S3焊接完成的覆铜基板DBC上的碳化硅MOSFET芯片到电极区域进行引线键合;
S5、使用环氧树脂对步骤S4完成引线键合的覆铜基板DBC进行塑封,制备得到双向开关功率模块。
9.根据权利要求8所述的方法,其特征在于,步骤S2中,真空烧结的温度为25~300℃,时间为1~2h。
10.根据权利要求8所述的方法,其特征在于,步骤S3中,加热温度为25~300℃。
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