WO2016095153A1 - 采用机械刀具切割晶圆的方法 - Google Patents
采用机械刀具切割晶圆的方法 Download PDFInfo
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- WO2016095153A1 WO2016095153A1 PCT/CN2014/094190 CN2014094190W WO2016095153A1 WO 2016095153 A1 WO2016095153 A1 WO 2016095153A1 CN 2014094190 W CN2014094190 W CN 2014094190W WO 2016095153 A1 WO2016095153 A1 WO 2016095153A1
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- Prior art keywords
- wafer
- cutting
- protective film
- cut
- mechanical cutter
- Prior art date
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000005507 spraying Methods 0.000 claims abstract description 9
- 238000002791 soaking Methods 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims description 39
- 238000004140 cleaning Methods 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- -1 salt compound Chemical class 0.000 claims description 8
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229920000570 polyether Polymers 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 4
- 229920002050 silicone resin Polymers 0.000 claims description 3
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 125000002723 alicyclic group Chemical group 0.000 claims description 2
- 125000001931 aliphatic group Chemical group 0.000 claims description 2
- 150000008055 alkyl aryl sulfonates Chemical class 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 238000001723 curing Methods 0.000 claims description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000945 filler Substances 0.000 claims description 2
- 238000013007 heat curing Methods 0.000 claims description 2
- 239000010445 mica Substances 0.000 claims description 2
- 229910052618 mica group Inorganic materials 0.000 claims description 2
- 230000004048 modification Effects 0.000 claims description 2
- 238000012986 modification Methods 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 150000001282 organosilanes Chemical class 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 239000007822 coupling agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000003698 laser cutting Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 62
- 238000007654 immersion Methods 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Definitions
- the invention relates to the field of microelectronics technology, in particular to a method for cutting a wafer by using a mechanical cutter.
- the processing of the chip is to first cut the wafer with the functional wafer into individual chips, and then package the chips into semiconductor chips.
- the wafer cutting process is very important.
- two methods are generally used for cutting the wafer.
- One is to use a blade to mechanically cut the wafer.
- the cost is low, but because of the crystal
- the circle itself is thin and brittle, so it is very easy to break the wafer, or damage the wafer on the wafer, and after cutting, the wafer will have obvious chipping at the cut, and it is easy to generate dust pollution.
- Circular cutting is commonly used in another method, that is, laser cutting of wafers. Although this method does not have the above-mentioned disadvantages of mechanical cutting, it is very expensive, and thus is not widely used at present.
- the technical problem to be solved by the present invention is to overcome the defects of the prior art and provide a method for cutting a wafer by using a mechanical cutter which is low in cost and which is not easily damaged by the wafer and has no dust pollution.
- the present invention provides a method of cutting a wafer using a mechanical cutter, which comprises the following steps:
- the cutting protective film is waterproof and can be dissolved by the water-based cleaning liquid, and the cutting protective film is removed by soaking or spraying the water-based cleaning liquid in the step S3.
- the cut protective film is made of the following weight ratio raw materials:
- the water-based cleaning solution is made from the following weight ratio raw materials:
- the cutting protection film is applied to the front surface of the wafer to be cut by liquid coating by spin coating or screen printing, and then the liquid is formed into a film shape attached to the front surface of the wafer by baking.
- the present invention has the following advantages: the present invention employs a cutting protective film which is well-shielded and can be dissolved by a water-based cleaning solution, is applied to the front surface of the wafer, covers the functional wafer on the wafer, and then performs Wafer cutting, the strength of the wafer is enhanced during cutting, and the cut surface of the wafer is very smooth, and no dust is generated.
- the wafer is directly immersed in the water-based cleaning liquid or sprayed.
- the method is to spray a water-based cleaning liquid onto the wafer, and the water-based cleaning liquid dissolves the cutting protective film on the front side of the wafer to obtain a finished wafer-cut product.
- the above method is much lower than the laser cutting cost, but it does not cause the problem that the wafer originally cut by the mechanical tool is easily broken, and the cutting protective film is used, and the removal is directly carried out by spraying or immersing, which is simple. Convenience does not cause any damage to the wafer on the original wafer.
- the present invention provides a method of cutting a wafer using a mechanical tool, which includes the following steps:
- the cutting protective film is waterproof and can be dissolved by the water-based cleaning liquid
- the cut protective film is made of the following weight ratio raw materials:
- the heat curing agent is one or more of a curing agent such as a fatty amine, an alicyclic or a polyamide, and the solid filler is a silica nanoparticle, a mica powder, a quartz powder or a silica powder, and the thermal coupling is performed.
- the silane coupling agent such as KH550, KH560, KH792, DL171 is generally used, and the silica gel is a modified silicone resin, and generally, a modified silicone resin having a siloxane content of 20% to 40% is used.
- the coating method using the cutting protective film is generally applied by spin coating or screen printing. After coating is completed, it is baked in a hot plate or oven. Bake, baking time is 10 to 30 minutes, baking temperature is 60 to 150 degrees, and then a protective film is formed on the front side of the wafer.
- S2 The wafer coated with the protective film is placed in a wafer cutter for cutting; when cutting, the cut tool is cut from the front side of the wafer to cut the wafer, including dicing and punching.
- the cut protective film is removed by soaking the water-based cleaning liquid or spraying the water-based cleaning liquid.
- the water-based cleaning solution is made from the following weight ratio raw materials:
- the surfactant is one of an aliphatic sulfonate, an alkyl aryl sulfonate and an alkylnaphthalene sulfonate, which is prepared by using sodium hydroxide or potassium hydroxide, and the stripping agent is used.
- a salt compound based on an alkaline environment after organosilane modification is a polyether modified silicone quaternary ammonium salt, a polyether modified polysiloxane sulfate salt, and a polyether modified polysiloxane phosphate salt.
- the cutting protection film is applied to the front surface of the wafer to be cut by liquid coating by spin coating or screen printing, and then the liquid is formed into a film shape attached to the front surface of the wafer by baking.
- the present invention has the following advantages: the present invention employs a cutting protective film which is well-shielded and can be dissolved by a water-based cleaning solution, is applied to the front surface of the wafer, covers the functional wafer on the wafer, and then performs Wafer cutting, the strength of the wafer is enhanced during cutting, and the cut surface of the wafer is very smooth, and no dust is generated.
- the wafer is directly immersed in the water-based cleaning liquid or sprayed.
- the method of spraying a water-based cleaning solution onto the wafer, and the water-based cleaning solution dissolves the cutting protective film on the front side of the wafer. Get the finished wafer cut.
- Table 1 is one of the examples of cutting the protective film and the test data.
- the cut protective film is applied to the front side of the wafer by spin coating, and then baked in the oven at a temperature of 65 degrees for 15 minutes.
- the front side of the circle is formed in a transparent film and attached to the front side of the wafer.
- To test the waterproof performance soak the following time in hot water soaked at 90 ° C, and measure the weight of the wafer with the protective film before and after immersion to obtain the following data:
- the weight of the wafer does not change after soaking in hot water at 90 ° C for 20 minutes, which means that the cut protective film is insoluble in water.
- Table 2 shows the second embodiment of the protective film and the test data.
- the cut protective film is applied to the front side of the wafer by spin coating, and then baked in the oven for 10 minutes at a temperature of 100 degrees to form a transparent film on the front side of the wafer. Attached to the front of the wafer. To test the waterproof performance, soak the following time in hot water soaked at 90 ° C, and measure the weight of the wafer with the protective film before and after immersion to obtain the following data:
- the weight of the wafer does not change, which means that the cutting protective film is insoluble in water, has good waterproof performance, and can cope with the requirements of water-cooling cooling of the mechanical cutting blade during the wafer cutting process.
- One of the formulations of water-based cleaning fluids is:
- the cutting protective film can be completely cleaned by immersion cleaning.
- the cleaning film can be completely cleaned by the spray cleaning.
- the second formula of water-based cleaning solution is:
- the cutting protective film can be completely cleaned by immersion cleaning.
- the cleaning film can be completely cleaned by the spray cleaning.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
Abstract
一种采用机械刀具切割晶圆的方法，包括以下步骤：1、在待切割的晶圆的正面涂覆一层切割保护膜；2、将涂覆有切割保护膜的晶圆放入晶圆切割机中利用机械刀具来切割；3、将切割后的晶圆通过浸泡或者喷淋的方式去除切割保护膜。采用上述方法比激光切割成本要大大降低，但是也不会产生原来采用机械刀具切割的晶圆容易破损的问题，而且采用这种切割保护膜，去除时直接采用喷淋或者浸泡的方式去除，简单方便，也不会对原始的晶圆上的晶片造成任何损伤。
Description
本发明涉及微电子技术领域，具体讲是一种采用机械刀具切割晶圆的方法。
目前，芯片的加工过程是，先将带有功能晶片的晶圆切切割成一个个芯片，然后再将这些芯片进行封装成半导体芯片。其中晶圆的切割过程非常重要，现有技术中一般采用两种方法对晶圆进行切割，一种是采用刀片，通过机械的方式来切割晶圆，采用这种方式，成本低，但是由于晶圆本身较薄而且脆，因此非常容易使晶圆破损，或者使晶圆上的晶片破损，而且切割之后，晶圆的切割处也会有明显的崩边，也容易产生粉尘污染，因此目前晶圆切割常用另一种方法，也就是激光切割晶圆，这种方法虽然没有机械切割的上述缺点，但是它成本非常昂贵，因此目前应用也不广。
发明内容
本发明所要解决的技术问题是，克服了现有技术的缺陷，提供了一种成本较低，而且晶圆不易破损，没有粉尘污染的采用机械刀具切割晶圆的方法。
为解决上述技术问题，本发明提出一种采用机械刀具切割晶圆的方法，它包括以下步骤：
S1、在待切割的晶圆的正面涂覆一层切割保护膜；
S2、将涂覆有切割保护膜的晶圆放入晶圆切割机中利用机械刀具来切割；
S3、将切割后的晶圆通过浸泡或者喷淋的方式去除切割保护膜。
所述切割保护膜防水而且可被水基清洗液溶解，所述步骤S3中采用浸泡或者喷淋水基清洗液的方式去除切割保护膜。
所述切割保护膜由以下重量配比的原料制成：
上述原料的重量百分比之和等于100％。
所述水基清洗液由以下重量配比的原料制成：
上述原料的重量百分比之和等于100％。
所述切割保护膜采用液体通过旋涂或者丝网印刷的方法涂覆到待切割的晶圆的正面，然后通过烘烤的方式使液体形成膜状附在晶圆的正面。
采用上述方法后，本发明具有以下优点：本发明采用一种隔水性良好而且可被水基清洗液溶解的切割保护膜涂敷到晶圆的正面，盖住晶圆上的功能晶片，然后进行晶圆切割，使切割时晶圆的强度得到加强，而且切割后的晶圆的切面非常光滑，而且不会产生粉尘，在切割后，直接将晶圆浸泡在水基清洗液中或者通过喷淋的方法向晶圆喷淋水基清洗液，水基清洗液将晶圆正面的切割保护膜溶解，得到晶圆切割的成品。采用上述方法比激光切割成本要大大降低，但是也不会产生原来采用机械刀具切割的晶圆容易破损的问题，而且采用这种切割保护膜，去除时直接采用喷淋或者浸泡的方式去除，简单方便，也不会对原始的晶圆上的晶片造成任何损伤。
下面结合具体实施方式对本发明作进一步详细的说明：
本发明提供一种采用机械刀具切割晶圆的方法，它包括以下步骤：
S1、在待切割的晶圆的正面涂覆一层切割保护膜，所述切割保护膜防水而且可被水基清洗液溶解；
所述切割保护膜由以下重量配比的原料制成：
上述原料的重量百分比之和等于100％。
所述热固化剂采用脂肪胺、脂环映或聚酰胺等固化剂的一种或者多种，所述固体填充料采用二氧化硅纳米颗粒、云母粉、石英粉或者硅石粉，所述热耦合剂一般采用硅烷类偶联剂如KH550，KH560，KH792，DL171，所述的硅胶为改性后的硅树脂，一般＝采用硅氧烷含量为20％-40％的改性硅树脂。涂敷到晶圆上时透明性好，而且防水，采用这种切割保护膜的涂敷方法一般采用旋涂或者丝网印刷的涂敷方式，涂敷完成之后，再在热板或者烘箱内烘烤，烘烤时间为10～30分钟，烘烤温度为60～150度，然后在晶圆的正面就形成一层切割保护膜。
S2、将涂覆有切割保护膜的晶圆放入晶圆切割机中进行切割；切割时，切割的刀具从晶圆的正面切下，对晶圆进行切割，包括切丁和打孔。
S3、将切割后的晶圆通过浸泡水基清洗液或者喷淋水基清洗液的方式去除切割保护膜。
所述水基清洗液由以下重量配比的原料制成：
上述原料的重量百分比之和等于100％。
所述表面活性剂采用脂肪族磺酸化物、烷基芳基磺酸化物和烷基萘磺酸化物其中的一种，所述碱液采用氢氧化钠或者氢氧化钾制备，所述剥离剂采用有机硅烷改性后基于碱性环境的盐类化合物。所述有机硅烷改性后基于碱性环境的盐类化合物采用聚醚改性有机硅季铵盐、聚醚改性聚硅氧烷硫酸酯盐、聚醚改性聚硅氧烷磷酸酯盐中的一种或几种。
所述切割保护膜采用液体通过旋涂或者丝网印刷的方法涂覆到待切割的晶圆的正面，然后通过烘烤的方式使液体形成膜状附在晶圆的正面。
采用上述方法后，本发明具有以下优点：本发明采用一种隔水性良好而且可被水基清洗液溶解的切割保护膜涂敷到晶圆的正面，盖住晶圆上的功能晶片，然后进行晶圆切割，使切割时晶圆的强度得到加强，而且切割后的晶圆的切面非常光滑，而且不会产生粉尘，在切割后，直接将晶圆浸泡在水基清洗液中或者通过喷淋的方法向晶圆喷淋水基清洗液，水基清洗液将晶圆正面的切割保护膜溶解，
得到晶圆切割的成品。
下面结合试验数据来说明：表1为切割保护膜的实施例之一及检测数据，切割保护膜采用旋涂涂敷到晶圆正面，然后在烘箱内通过65度的温度烘烤15分钟在晶圆正面形成透明膜状贴附到晶圆正面。测试防水性能，在浸泡90℃的热水里分别浸泡以下时间，检测浸泡前和浸泡后的带有切割保护膜的晶圆的重量得到数据如下：
表1
可以看出，在90℃热水浸泡20分钟后，晶圆的重量没有发生变化，是指切割保护膜不溶于水。
表2为切割保护膜的实施例之二及检测数据，切割保护膜采用旋涂涂敷到晶圆正面，然后在烘箱内通过100度的温度烘烤10分钟在晶圆正面形成透明膜状贴附到晶圆正面。测试防水性能，在浸泡90℃的热水里分别浸泡以下时间，检测浸泡前和浸泡后的带有切割保护膜的晶圆的重量得到数据如下：
表2
水浸泡20分钟后，晶圆的重量没有发生变化，是指切割保护膜不溶于水，防水性能好，可以应对在晶圆切割过程中对机械切割刀片进行淋水冷却等要求。
水基清洗液的配方之一为：
经测试对切割保护膜实施例之一，采用浸泡清洗，可以完全清洗掉切割保护膜，对切割保护膜实施例之二，采用喷淋清洗，可以完全清洗掉切割保护膜。
水基清洗液的配方之二为：
经测试对切割保护膜实施例之一，采用浸泡清洗，可以完全清洗掉切割保护膜，对切割保护膜实施例之二，采用喷淋清洗，可以完全清洗掉切割保护膜。
Claims (8)
- 一种采用机械刀具切割晶圆的方法，其特征在于：它包括以下步骤：S1、在待切割的晶圆的正面涂覆一层切割保护膜；S2、将涂覆有切割保护膜的晶圆放入晶圆切割机中利用机械刀具来切割；S3、将切割后的晶圆通过浸泡或者喷淋的方式去除切割保护膜。
- 根据权利要求1所述的采用机械刀具切割晶圆的方法，其特征在于：所述切割保护膜防水而且可被水基清洗液溶解，所述步骤S3中采用浸泡或者喷淋水基清洗液的方式去除切割保护膜。
- 根据权利要求2所述的采用机械刀具切割晶圆的方法，其特征在于：所述切割保护膜由以下重量配比的原料制成：
上述原料的重量百分比之和等于100％， - 根据权利要求3所述的采用机械刀具切割晶圆的方法，其特征在于：所述热固化剂采用脂肪胺、脂环映或聚酰胺等固化剂的一种或者多种，所述固体填充料采用二氧化硅纳米颗粒、云母粉、石英粉或者硅石粉，所述热耦合剂采用硅烷偶联剂，所述的硅胶采用硅氧烷含量为20％-40％的改性硅树脂。
- 根据权利要求2所述的采用机械刀具切割晶圆的方法，其特征在于：所述水基清洗液由以下重量配比的原料制成：
上述原料的重量百分比之和等于100％。 - 根据权利要求5所述的采用机械刀具切割晶圆的方法，其特征在于：所述表面活性剂采用脂肪族磺酸化物、烷基芳基磺酸化物和烷基萘磺酸化物其中的一 种，所述碱液采用氢氧化钠或者氢氧化钾制备，所述剥离剂采用有机硅烷改性后基于碱性环境的盐类化合物。
- 根据权利要求6所述的采用机械刀具切割晶圆的方法，其特征在于：所述有机硅烷改性后基于碱性环境的盐类化合物采用聚醚改性有机硅季铵盐、聚醚改性聚硅氧烷硫酸酯盐、聚醚改性聚硅氧烷磷酸酯盐中的一种或几种。
- 根据权利要求1所述的采用机械刀具切割晶圆的方法，其特征在于：所述切割保护膜采用液体通过旋涂或者丝网印刷的方法涂覆到待切割的晶圆的正面，然后通过烘烤的方式使液体形成膜状附在晶圆的正面。
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| CN111892013A (zh) * | 2020-06-28 | 2020-11-06 | 深圳清华大学研究院 | 一种硅基底薄膜的制备方法 |
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