KR101947091B1 - 기계식 절단 도구를 사용하여 웨이퍼를 절단하는 방법 - Google Patents

기계식 절단 도구를 사용하여 웨이퍼를 절단하는 방법 Download PDF

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Publication number: KR101947091B1
Authority: KR; South Korea
Prior art keywords: wafer; cutting; protective film; cut; salt
Prior art date: 2014-12-18

Application number

KR1020167032632A

Other languages

English (en)

Korean (ko)

Other versions

KR20170003934A (ko

Inventor

하오 탕

웨이 장

Original Assignee

저지앙 마이크로테크 머테리얼 컴퍼니 리미티드

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2014-12-18

Filing date

2014-12-18

Publication date

2019-02-12

2014-12-18 Application filed by 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 filed Critical 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드

2017-01-10 Publication of KR20170003934A publication Critical patent/KR20170003934A/ko

2019-02-12 Application granted granted Critical

2019-02-12 Publication of KR101947091B1 publication Critical patent/KR101947091B1/ko

Links

238000005520 cutting process Methods 0.000 title claims abstract description 61
238000000034 method Methods 0.000 title claims abstract description 24
230000001681 protective effect Effects 0.000 claims abstract description 42
238000005507 spraying Methods 0.000 claims abstract description 8
239000011248 coating agent Substances 0.000 claims abstract description 5
238000000576 coating method Methods 0.000 claims abstract description 5
238000004140 cleaning Methods 0.000 claims description 20
239000000463 material Substances 0.000 claims description 18
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 15
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
239000007788 liquid Substances 0.000 claims description 13
-1 aliphatic amines Chemical class 0.000 claims description 11
HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 11
239000003795 chemical substances by application Substances 0.000 claims description 9
239000004721 Polyphenylene oxide Substances 0.000 claims description 8
229920000570 polyether Polymers 0.000 claims description 8
239000000945 filler Substances 0.000 claims description 6
150000001282 organosilanes Chemical class 0.000 claims description 6
239000000843 powder Substances 0.000 claims description 6
238000005406 washing Methods 0.000 claims description 6
239000008367 deionised water Substances 0.000 claims description 5
229910021641 deionized water Inorganic materials 0.000 claims description 5
239000000203 mixture Substances 0.000 claims description 5
150000003839 salts Chemical class 0.000 claims description 5
239000000741 silica gel Substances 0.000 claims description 5
229910002027 silica gel Inorganic materials 0.000 claims description 5
239000004094 surface-active agent Substances 0.000 claims description 5
239000004952 Polyamide Substances 0.000 claims description 4
150000001447 alkali salts Chemical class 0.000 claims description 4
239000007822 coupling agent Substances 0.000 claims description 4
229920002647 polyamide Polymers 0.000 claims description 4
239000000377 silicon dioxide Substances 0.000 claims description 4
238000004528 spin coating Methods 0.000 claims description 3
238000001029 thermal curing Methods 0.000 claims description 3
229910004298 SiO 2 Inorganic materials 0.000 claims description 2
125000001931 aliphatic group Chemical group 0.000 claims description 2
150000001875 compounds Chemical class 0.000 claims description 2
238000001723 curing Methods 0.000 claims description 2
KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 2
239000010445 mica Substances 0.000 claims description 2
229910052618 mica group Inorganic materials 0.000 claims description 2
239000010453 quartz Substances 0.000 claims description 2
150000003242 quaternary ammonium salts Chemical class 0.000 claims description 2
229920002050 silicone resin Polymers 0.000 claims description 2
238000002791 soaking Methods 0.000 claims description 2
229920001187 thermosetting polymer Polymers 0.000 claims description 2
ABJSOROVZZKJGI-OCYUSGCXSA-N (1r,2r,4r)-2-(4-bromophenyl)-n-[(4-chlorophenyl)-(2-fluoropyridin-4-yl)methyl]-4-morpholin-4-ylcyclohexane-1-carboxamide Chemical compound C1=NC(F)=CC(C(NC(=O)[C@H]2[C@@H](C[C@@H](CC2)N2CCOCC2)C=2C=CC(Br)=CC=2)C=2C=CC(Cl)=CC=2)=C1 ABJSOROVZZKJGI-OCYUSGCXSA-N 0.000 claims 1
230000015271 coagulation Effects 0.000 claims 1
238000005345 coagulation Methods 0.000 claims 1
239000002105 nanoparticle Substances 0.000 claims 1
238000007650 screen-printing Methods 0.000 claims 1
239000007921 spray Substances 0.000 claims 1
238000007598 dipping method Methods 0.000 abstract description 4
238000003698 laser cutting Methods 0.000 abstract description 2
235000012431 wafers Nutrition 0.000 description 61
238000007654 immersion Methods 0.000 description 5
238000007639 printing Methods 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
WZZBNLYBHUDSHF-DHLKQENFSA-N 1-[(3s,4s)-4-[8-(2-chloro-4-pyrimidin-2-yloxyphenyl)-7-fluoro-2-methylimidazo[4,5-c]quinolin-1-yl]-3-fluoropiperidin-1-yl]-2-hydroxyethanone Chemical compound CC1=NC2=CN=C3C=C(F)C(C=4C(=CC(OC=5N=CC=CN=5)=CC=4)Cl)=CC3=C2N1[C@H]1CCN(C(=O)CO)C[C@@H]1F WZZBNLYBHUDSHF-DHLKQENFSA-N 0.000 description 2
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
229910052681 coesite Inorganic materials 0.000 description 2
238000011109 contamination Methods 0.000 description 2
229910052906 cristobalite Inorganic materials 0.000 description 2
239000000428 dust Substances 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000012528 membrane Substances 0.000 description 2
150000003376 silicon Chemical class 0.000 description 2
DAJSVUQLFFJUSX-UHFFFAOYSA-M sodium;dodecane-1-sulfonate Chemical compound [Na+].CCCCCCCCCCCCS([O-])(=O)=O DAJSVUQLFFJUSX-UHFFFAOYSA-M 0.000 description 2
229910052682 stishovite Inorganic materials 0.000 description 2
229910052905 tridymite Inorganic materials 0.000 description 2
239000006087 Silane Coupling Agent Substances 0.000 description 1
NMFHJNAPXOMSRX-PUPDPRJKSA-N [(1r)-3-(3,4-dimethoxyphenyl)-1-[3-(2-morpholin-4-ylethoxy)phenyl]propyl] (2s)-1-[(2s)-2-(3,4,5-trimethoxyphenyl)butanoyl]piperidine-2-carboxylate Chemical compound C([C@@H](OC(=O)[C@@H]1CCCCN1C(=O)[C@@H](CC)C=1C=C(OC)C(OC)=C(OC)C=1)C=1C=C(OCCN2CCOCC2)C=CC=1)CC1=CC=C(OC)C(OC)=C1 NMFHJNAPXOMSRX-PUPDPRJKSA-N 0.000 description 1
238000003776 cleavage reaction Methods 0.000 description 1
239000000701 coagulant Substances 0.000 description 1
238000001816 cooling Methods 0.000 description 1
230000007547 defect Effects 0.000 description 1
238000005553 drilling Methods 0.000 description 1
238000013467 fragmentation Methods 0.000 description 1
238000006062 fragmentation reaction Methods 0.000 description 1
239000006193 liquid solution Substances 0.000 description 1
238000004377 microelectronic Methods 0.000 description 1
238000004806 packaging method and process Methods 0.000 description 1
238000012858 packaging process Methods 0.000 description 1
LQAZPMXASFNKCD-UHFFFAOYSA-M potassium;dodecane-1-sulfonate Chemical compound [K+].CCCCCCCCCCCCS([O-])(=O)=O LQAZPMXASFNKCD-UHFFFAOYSA-M 0.000 description 1
230000007017 scission Effects 0.000 description 1
239000004065 semiconductor Substances 0.000 description 1
238000009736 wetting Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Dicing (AREA)

KR1020167032632A 2014-12-18 2014-12-18 기계식 절단 도구를 사용하여 웨이퍼를 절단하는 방법 KR101947091B1 (ko)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PCT/CN2014/094190 WO2016095153A1 (zh)	2014-12-18	2014-12-18	采用机械刀具切割晶圆的方法

Publications (2)

Publication Number	Publication Date
KR20170003934A KR20170003934A (ko)	2017-01-10
KR101947091B1 true KR101947091B1 (ko)	2019-02-12

Family

ID=56125616

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020167032632A KR101947091B1 (ko)	2014-12-18	2014-12-18	기계식 절단 도구를 사용하여 웨이퍼를 절단하는 방법

Country Status (2)

Country	Link
KR (1)	KR101947091B1 (zh)
WO (1)	WO2016095153A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
KR101909045B1 (ko) *	2017-03-28	2018-10-18	마이크로 머터리얼스 인코포레이티드	기계식 절단 도구를 사용하여 웨이퍼를 다이싱하는 방법
KR102038056B1 (ko) *	2018-01-19	2019-10-30	주식회사 엠티아이	다이싱 공정용 보호코팅제 박리용 박리제
WO2019143202A1 (ko) *	2018-01-19	2019-07-25	주식회사 엠티아이	다이싱 공정용 보호코팅제 박리용 박리제
KR102069771B1 (ko) *	2018-10-24	2020-01-23	(주)비전테크놀러지	와운드 컷트코어를 이용한 전류센서 제조방법
CN110379771A (zh) *	2019-07-19	2019-10-25	苏州长瑞光电有限公司	晶圆分离方法
CN111298854B (zh) *	2020-02-27	2021-08-06	西人马联合测控（泉州）科技有限公司	芯片的成型方法以及晶圆
CN111892013A (zh) *	2020-06-28	2020-11-06	深圳清华大学研究院	一种硅基底薄膜的制备方法

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JP2003298035A (ja) *	2002-02-25	2003-10-17	Samsung Electronics Co Ltd	ウエハーソーイング方法

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CN1301536C (zh) *	2003-05-26	2007-02-21	台湾积体电路制造股份有限公司	一种避免晶圆切割时微粒掉落至晶圆上的方法
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2014
- 2014-12-18 WO PCT/CN2014/094190 patent/WO2016095153A1/zh active Application Filing
- 2014-12-18 KR KR1020167032632A patent/KR101947091B1/ko active IP Right Grant

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Also Published As

Publication number	Publication date
KR20170003934A (ko)	2017-01-10
WO2016095153A1 (zh)	2016-06-23

Legal Events

Date	Code	Title
2016-11-22	A201	Request for examination
2018-01-04	E902	Notification of reason for refusal
2018-08-21	E902	Notification of reason for refusal
2019-01-02	E701	Decision to grant or registration of patent right
2019-02-01	GRNT	Written decision to grant

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