WO2015178227A1 - 弾性波デバイス及びその製造方法 - Google Patents
弾性波デバイス及びその製造方法 Download PDFInfo
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- WO2015178227A1 WO2015178227A1 PCT/JP2015/063323 JP2015063323W WO2015178227A1 WO 2015178227 A1 WO2015178227 A1 WO 2015178227A1 JP 2015063323 W JP2015063323 W JP 2015063323W WO 2015178227 A1 WO2015178227 A1 WO 2015178227A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Definitions
- the present invention relates to an acoustic wave device in which an acoustic wave element is mounted on a package substrate via a bump electrode, and a method for manufacturing the acoustic wave device.
- a bump electrode is bonded to a pad electrode of an acoustic wave element.
- a bonding Al layer having a thickness of 840 nm is formed on the outermost surface of the pad electrode, and the bonding Al layer is bonded to a bump electrode made of Au.
- the bonding Al layer and the bump electrode are bonded by fusion bonding, and an Au—Al alloy layer is formed at the bonded portion.
- An object of the present invention is to provide an acoustic wave device and a method for manufacturing the acoustic wave device that can be reduced in size and have excellent bonding strength between the acoustic wave element and the bump electrode.
- the acoustic wave device is electrically connected to a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, and the IDT electrode, and a wiring layer, a barrier layer, and a bonding layer are provided on the piezoelectric substrate.
- a gap is provided between the acoustic wave device including a pad electrode having a laminated structure provided in order, a package substrate having an electrode land on the surface, and the acoustic wave device and the package substrate.
- a bump electrode for electrically and mechanically bonding the pad electrode and the electrode land, and the bonding layer of the pad electrode includes a first main surface on the package substrate side, The first main surface side of the bonding layer and the bump electrode are bonded to form a bonded portion, and an alloy is formed on the bonded portion. Layer is formed, the thickness of the bonding layer There is a 2000nm or less, the thickness of the alloy layer is not more than 2100 nm, the distance from the piezoelectric substrate side surface of the alloy layer to the second major surface of the adhesive layer is not more than 1950 nm.
- the maximum diameter of voids present in the alloy layer is 250 nm or less.
- the surface of the alloy layer on the piezoelectric substrate side reaches the second main surface of the bonding layer.
- the surface of the alloy layer on the piezoelectric substrate side is located between the first main surface and the second main surface of the bonding layer.
- the bonding layer has a thickness of 450 nm or less.
- the acoustic wave device further includes a mold resin layer provided on the package substrate so as to cover an outer periphery of the acoustic wave element.
- the bonding layer is made of Al or an alloy of Al and at least one selected from the group consisting of Cu, W, Ti, Cr, Ta, and Si. Including.
- the bump electrode includes Au.
- the method for manufacturing an acoustic wave device is a method for manufacturing the acoustic wave device, comprising: preparing an acoustic wave element having a bonding layer thickness of 2000 nm or less of the pad electrode; and A step of bonding the bump electrode to the pad electrode by bump bonding; and a step of mounting the elastic wave element to which the bump electrode is bonded to a package substrate by flip chip bonding, and the elastic wave element is mounted on the package substrate.
- the distance from the bonding layer of the pad electrode to the second main surface of the bonding layer of the pad electrode is 1950 nm or less at the bonding portion of the pad electrode and the bump electrode, and Heating is performed so as to form an alloy layer having a thickness of 2100 nm or less.
- the thickness of the bonding layer of the pad electrode is 2000 nm or less
- the thickness of the bonding layer of the pad electrode is 450 nm or less.
- An elastic wave element is prepared.
- an acoustic wave device that can be miniaturized and has excellent bonding strength between the acoustic wave element and the bump electrode.
- FIG. 1A is a schematic front sectional view of an acoustic wave device according to the first embodiment of the present invention
- FIG. 1B is an acoustic wave device according to the first embodiment of the present invention. It is a typical top view which shows the electrode structure of the used acoustic wave element.
- FIG. 2 is a schematic plan view showing a wiring structure of an acoustic wave element used in the acoustic wave device according to the first embodiment of the present invention.
- FIG. 3 is an enlarged view of a schematic cross section of a joint portion between an acoustic wave element and a package substrate in the acoustic wave device according to the first embodiment of the present invention.
- FIG. 1A is a schematic front sectional view of an acoustic wave device according to the first embodiment of the present invention
- FIG. 1B is an acoustic wave device according to the first embodiment of the present invention. It is a typical top view which shows the electrode structure of the used acoustic
- FIG. 4 is an enlarged view of a schematic cross section of a joint portion between an acoustic wave element and a package substrate in an acoustic wave device according to a second embodiment of the present invention.
- FIG. 5 shows an acoustic wave device according to the second embodiment of the present invention, in which the thickness of the remaining portion excluding the joint portion with the bump electrode of the joining layer is 250 nm and the acoustic wave element and the bump electrode are It is a SEM photograph of 5500 times magnification of the section of a joined part.
- FIG. 5 shows an acoustic wave device according to the second embodiment of the present invention, in which the thickness of the remaining portion excluding the joint portion with the bump electrode of the joining layer is 250 nm and the acoustic wave element and the bump electrode are It is a SEM photograph of 5500 times magnification of the section of a joined part.
- FIG. 6 shows an acoustic wave device according to the second embodiment of the present invention, in which the thickness of the remaining part excluding the joint part with the bump electrode of the joining layer is 350 nm, and the acoustic wave element and the bump electrode It is a SEM photograph of 5500 times magnification of the section of a joined part.
- FIG. 7 shows an acoustic wave device according to the second embodiment of the present invention, in which the thickness of the remaining part excluding the joint part with the bump electrode of the joining layer is 450 nm, and the acoustic wave element and the bump electrode It is a SEM photograph of 5500 times magnification of the section of a joined part.
- FIG. 7 shows an acoustic wave device according to the second embodiment of the present invention, in which the thickness of the remaining part excluding the joint part with the bump electrode of the joining layer is 450 nm, and the acoustic wave element and the bump electrode It is a SEM photograph of 5500 times magnification of the
- FIG. 8 shows an acoustic wave device according to the second embodiment of the present invention, in which the thickness of the remaining portion excluding the joint portion with the bump electrode of the joining layer is 650 nm and the acoustic wave element and the bump electrode are It is a SEM photograph of 5500 times magnification of the section of a joined part.
- FIG. 9 is a diagram showing the relationship between the thickness of the bonding layer and the thickness of the alloy layer in the acoustic wave device according to the second embodiment of the present invention.
- FIG. 10 is a diagram showing a thermal shock test result when the thickness of the bonding layer is 450 nm and 650 nm, respectively, in the acoustic wave device according to the second embodiment of the present invention.
- FIG. 1A is a schematic front sectional view of an acoustic wave device according to the first embodiment of the present invention
- FIG. 1B is an acoustic wave device according to the first embodiment of the present invention. It is a typical top view which shows the electrode structure of the used acoustic wave element.
- FIG. 2 is a schematic plan view showing a wiring structure of an acoustic wave element used in the acoustic wave device according to the first embodiment of the present invention.
- the elastic wave device 1 includes an elastic wave element 7.
- the acoustic wave element 7 includes a piezoelectric substrate 2, an IDT electrode 4, and a pad electrode 5.
- the piezoelectric substrate 2 has a main surface 2a.
- a substrate made of a piezoelectric single crystal such as LiTaO 3 or LiNbO 3 can be used.
- An IDT electrode 4 is provided on the main surface 2 a of the piezoelectric substrate 2.
- the IDT electrode 4 can be formed of an appropriate metal material such as Al, Cu, Pt, Au, Ag, Ti, Ni, Cr, Mo, W, or an alloy mainly composed of any of these metals.
- the IDT electrode 4 may be a single layer or a laminate in which two or more metal layers are laminated.
- an IDT electrode 4 is provided by laminating a Ti layer and an AuCu alloy layer in this order on the main surface 2 a of the piezoelectric substrate 2.
- the electrode structure shown in FIG. 1B is formed on the piezoelectric substrate 2. That is, the IDT electrode 4 and the reflectors 9 and 10 disposed on both sides of the IDT electrode 4 in the surface acoustic wave propagation direction are formed. Thus, a 1-port surface acoustic wave resonator is configured.
- the electrode structure including the IDT electrode in the present invention is not particularly limited.
- a filter may be configured by combining a plurality of resonators. Examples of such a filter include a ladder type filter, a longitudinally coupled resonator type filter, and a lattice type filter.
- the pad electrode 5 is laminated on the main surface 2 a of the piezoelectric substrate 2.
- the pad electrode 5 is electrically connected to the IDT electrode 4.
- the pad electrode 5 is made of an appropriate metal. Specifically, the pad electrode 5 is configured by laminating metal layers to be described later.
- FIG. 1 (a) only the IDT electrode 4 and the pad electrode 5 are shown on the main surface 2a of the piezoelectric substrate 2 for easy understanding of the configuration of the present invention.
- a wiring electrode 11 for connecting the IDT electrode 4 and the pad electrode 5 is further provided on the piezoelectric substrate 2.
- the package substrate 3 has a rectangular plate shape.
- the package substrate 3 can be made of an insulating ceramic such as alumina, or an insulating resin.
- the acoustic wave element 7 is electrically and mechanically joined to the package substrate 3 via the bump electrode 6. More specifically, as shown in FIG. 1A, the pad electrode 5 that is a constituent member of the acoustic wave element 7 is bonded to the bump electrode 6. On the other hand, the package substrate 3 has an electrode land 3a on the upper surface. The electrode land 3 a is bonded to the bump electrode 6.
- the pad electrode 5, the bump electrode 6 and the package substrate 3 of the acoustic wave element 7 form a hollow space 2c where the IDT electrode 4 on the piezoelectric substrate 2 faces. ing. Thereby, a so-called chip size package structure is realized.
- the bump electrode 6 and the electrode land 3a of the package substrate 3 are formed of Au.
- the bump electrode 6 and the electrode land 3a of the package substrate 3 may be formed of other appropriate metal materials.
- a mold resin layer 8 is provided on the package substrate 3 so as to cover the acoustic wave element 7.
- an appropriate resin such as an epoxy resin is used, for example.
- FIG. 3 is an enlarged view of a schematic cross section of a joint portion between the acoustic wave device 7 and the package substrate 3 of the acoustic wave device 1 according to the first embodiment.
- the pad electrode 5 is formed of an adhesion layer 5D, a wiring layer 5C, a barrier layer 5B, and a bonding layer 5A.
- the adhesion layer 5D, the wiring layer 5C, the barrier layer 5B, and the bonding layer 5A are laminated on the piezoelectric substrate 2 in this order from the piezoelectric substrate 2 side.
- the piezoelectric substrate 2 and the wiring layer 5C are bonded via an adhesion layer 5D made of Ti.
- the adhesion layer 5D can be omitted.
- the wiring layer 5C is formed of an alloy of Al and Cu (AlCu alloy).
- the barrier layer 5B is made of Ti.
- the bonding layer 5A has first and second main surfaces 5a and 5b.
- the bonding layer 5A is made of Al or an alloy of Al and another metal.
- As the other metal at least one selected from the group consisting of Cu, W, Ti, Cr, Ta, and Si is used.
- the bonding layer 5A is Al.
- the bonding layer 5 ⁇ / b> A of the pad electrode 5 is bonded to the bump electrode 6.
- the bonding layer 5A has a first main surface 5a and a second main surface 5b facing each other.
- the first main surface 5a of the bonding layer 5A is located on the package substrate 3 side and is bonded to the bump electrode 6.
- the second main surface 5b of the bonding layer 5A is located on the piezoelectric substrate 2 side.
- An alloy layer 12 is formed at a joint portion formed by metal diffusion between the Al bonding layer 5A and the Au bump electrode 6.
- the alloy layer 12 is made of an AuAl alloy. In the present embodiment, the alloy layer 12 does not reach the second main surface 5b of the bonding layer 5A. That is, the surface 12a of the alloy layer 12 on the piezoelectric substrate 2 side is located between the first main surface 5a and the second main surface 5b of the bonding layer 5A.
- the thickness T of the bonding layer 5A is 2000 nm or less. More specifically, when the bonding layer 5A is viewed from a direction parallel to the normal line of the first main surface 5a, the thickness of the remaining portion 5c excluding the bonding portion between the bonding layer 5A and the bump electrode 6 is: This is the thickness T of the bonding layer 5A. That is, in the thickness direction, the distance connecting the first main surface 5a and the second main surface 5b of the bonding layer 5A is 2000 nm or less.
- the thickness T of the bonding layer 5A is set to 450 nm or less
- the entire thickness of the bonding layer 5A is changed to the alloy layer 12 with the bump electrode 6, the bonding layer 5A and the bump electrode 6 It is possible to suppress the thickness A of the alloy layer 12 generated by the change to 2100 nm or less.
- a direction extending in parallel with the normal line of the first main surface is referred to as a thickness direction.
- the distance from the surface 12a of the alloy layer 12 on the piezoelectric substrate 2 side to the second main surface 5b of the bonding layer 5A is 1950 nm or less, and the bonding layer 5A and the bump electrode 6
- the thickness A of the alloy layer 12 is 2100 nm or less.
- the thickness B of the unalloyed layer in the bonding layer 5A from the surface 12a that is the boundary of the alloy layer 12 on the piezoelectric substrate 2 side to the second main surface 5b of the bonding layer 5A is 1950 nm or less, and the thickness of the alloy layer 12
- A By setting A to 2100 nm or less, it is possible to suppress the amount of mutual diffusion between the alloy layer 12 and the unalloyed layer that occurs due to an increase in the ambient temperature. It is possible to suppress the generation of voids generated due to the diffusion rate imbalance generated during the mutual diffusion, that is, Kirkendall voids.
- the major axis of the Kirkendall void is 250 nm or less.
- the maximum outer dimension of the Kirkendall void is 250 nm or less.
- the acoustic wave element 7 in which the IDT electrode 4 and the pad electrode 5 are provided on the piezoelectric substrate 2 is prepared.
- the pad electrode 5 the bonding layer 5A having a thickness T of 2000 nm or less is used. From the viewpoint of further suppressing the generation of the above-mentioned Kirkendall void, it is preferable to use a pad electrode 5 having a bonding layer 5A having a thickness T of 450 nm or less.
- the bump electrode 6 is bonded to the bonding layer 5A of the pad electrode 5 of the acoustic wave element 7 by bump bonding.
- the acoustic wave device 1 is manufactured by mounting the acoustic wave element 7 to which the bump electrode 6 is bonded on the package substrate 3 by flip chip bonding.
- the distance from the bonding layer between the pad electrode bonding layer and the bump electrode to the second main surface of the bonding layer of the pad electrode is 1950 nm. It heats so that it may be below and may form the alloy layer whose thickness is 2100 nm or less.
- FIG. 4 is an enlarged view of a schematic cross section of a joint portion between the acoustic wave element 7 and the package substrate 3 in the acoustic wave device according to the second embodiment of the present invention.
- the alloy layer 12 reaches the second main surface 5b of the bonding layer 5A.
- Other points are the same as those in the first embodiment.
- the Kirkendall void at the bonding portion between the bonding layer 5A and the bump electrode 6 is used. Can be further suppressed. Therefore, it is possible to further suppress a decrease in bonding strength between the acoustic wave element 7 and the bump electrode 6 due to thermal shock.
- the alloy layer 12 may extend beyond the second main surface 5b of the bonding layer 5A to the barrier layer 5B, which is a diffusion prevention layer, from the viewpoint of more effectively suppressing the generation of Kirkendall voids. .
- 5 to 8 show an acoustic wave device 7 and a bump electrode 6 of a sample in which the thickness T of the bonding layer is 250 nm, 350 nm, 450 nm, and 650 nm, respectively, in the acoustic wave device according to the second embodiment of the present invention. It is a SEM photograph in 5500 times magnification of the section of a joined part. 5 to 8 show cross-sectional views of a portion where the piezoelectric substrate 2, the pad electrode 5, the alloy layer 12, and the bump electrode 6 are laminated in this order from the top.
- the thickness T of the bonding layer 5A is the distance between the first main surface and the second main surface in the bonding layer 5A, as seen from the thickness direction as shown in FIGS.
- the thickness of the remaining part 5c except the part which overlaps with the junction part in 5 A of joining layers shall be meant.
- the pad electrode 5 is formed by laminating the adhesion layer 5D, the wiring layer 5C, the barrier layer 5B, the bonding layer 5A or the alloy layer 12 with the bump electrode 6 in this order from the piezoelectric substrate 2 side.
- the piezoelectric substrate 2 and the wiring layer 5C were bonded via an adhesion layer 5D made of Ti.
- the adhesion layer 5D can be omitted.
- the Kirkendall void 13 is generated at the bonded portion of the alloy layer 12 and the bump electrode 6, but the maximum diameter of the Kirkendall void 13 is It was 250 nm or less.
- FIG. 9 is a diagram showing the relationship between the thickness T of the bonding layer 5A and the thickness A of the alloy layer 12. As shown in FIG. 9 that the thickness T of the bonding layer 5A and the thickness A of the alloy layer 12 are in a proportional relationship. Further, when the thickness T of the bonding layer 5A was 450 nm, the thickness A of the alloy layer 12 was 2100 nm. Therefore, when the thickness A of the alloy layer 12 is 2100 nm or less, generation of the Kirkendall void 13 having a maximum diameter larger than 250 nm is suppressed.
- the thickness T of the bonding layer 5A is 450 nm or less, that is, the thickness A of the alloy layer 12 is 2100 nm or less. Is preferred.
- the thickness T of the bonding layer 5A is 350 nm or less, that is, the thickness A of the alloy layer 12 is 1800 nm or less.
- the thickness T of the bonding layer 5A is 250 nm or less, that is, the thickness A of the alloy layer 12 is 1500 nm or less.
- FIG. 10 is a view showing a thermal shock test result when the thickness T of the bonding layer 5A is set to 450 nm and 650 nm, respectively, in the acoustic wave device according to the second embodiment of the present invention.
- the vertical axis represents the failure probability F (t) of the acoustic wave device by the thermal shock test
- the horizontal axis represents the number of cycles of the thermal shock test.
- a thermal shock was applied N times in a cycle test in which the temperature was raised from ⁇ 40 ° C. to 125 ° C. and then the temperature was lowered from 125 ° C. to ⁇ 40 ° C. as one cycle. Thereafter, the resistance between the pad electrode 5 and the electrode land 3a at room temperature (25 ° C.) was measured based on the JIS standard (JIS C 60068-2-14). The holding time at each temperature was 30 minutes.
- the failure probability F (t) was calculated by the following equation using a failure sample in which the space between the pad electrode 5 and the electrode land 3a was open.
- Failure probability F (t) number of failure samples / number of tests ⁇ 100
- FIG. 10 shows that the failure probability is lower in the sample with the thickness T of the bonding layer 5A of 450 nm than in the sample with 650 nm.
- omitted in the sample whose thickness T of the joining layer 5A is 250 nm, the failure sample did not generate
- the thickness T of the bonding layer 5A is 450 nm or less, that is, the alloy layer 12
- the thickness A is 450 nm or less, that is, the alloy layer 12
- the thickness T of the bonding layer 5A is set to 350 nm or less, that is, the thickness A of the alloy layer 12 is set to 1800 nm or less, the generation of Kirkendall voids itself is suppressed. It is possible to further suppress the decrease in bonding strength.
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Abstract
Description
図1(a)は、本発明の第1の実施形態に係る弾性波デバイスの模式的正面断面図であり、図1(b)は、本発明の第1の実施形態に係る弾性波デバイスで用いられている弾性波素子の電極構造を示す模式的平面図である。
弾性波デバイス1の製造方法では、まず、圧電基板2上にIDT電極4及びパッド電極5が設けられている弾性波素子7を用意する。パッド電極5としては、接合層5Aの厚みTが2000nm以下のものが用いられる。上述したカーケンダルボイドの発生をより一層抑制する観点から、パッド電極5としては、接合層5Aの厚みTが450nm以下のものを用いることが好ましい。
図4は、本発明の第2の実施形態に係る弾性波デバイスにおける弾性波素子7とパッケージ基板3との接合部の模式的断面の拡大図である。第2の実施形態では、合金層12が、接合層5Aの第2の主面5bに至っている。その他の点は、第1の実施形態と同じ構成である。
2…圧電基板
2a…圧電基板2の主面
2c…中空空間
3…パッケージ基板
3a…電極ランド
4…IDT電極
5…パッド電極
5a…第1の主面
5b…第2の主面
5c…残りの部分
5A…接合層
5B…バリア層
5C…配線層
5D…密着層
6…バンプ電極
7…弾性波素子
8…モールド樹脂層
9,10…反射器
11…配線電極
12…合金層
12a…合金層12のパッド電極5側の面
13…カーケンダルボイド
Claims (10)
- 圧電基板と、前記圧電基板上に設けられたIDT電極と、前記IDT電極に電気的に接続され、前記圧電基板上に配線層、バリア層及び接合層がこの順で設けられた積層構造を有するパッド電極とを含む弾性波素子と、
表面上に電極ランドが設けられているパッケージ基板と、
前記弾性波素子と前記パッケージ基板との間に隙間を設けるようにして、前記パッド電極と前記電極ランドとを電気的にかつ機械的に接合しているバンプ電極とを備え、
前記パッド電極の接合層は、前記パッケージ基板側の第1の主面と、該第1の主面と対向する第2の主面とを有しており、前記接合層の前記第1の主面側と前記バンプ電極とが接合されて接合部が形成され、該接合部に合金層が形成されており、
前記接合層の厚みが2000nm以下であり、前記合金層の厚みが2100nm以下であり、前記合金層の前記圧電基板側の面から前記接合層の前記第2の主面までの距離が1950nm以下である、弾性波デバイス。 - 前記合金層中に存在するボイドの最大直径が250nm以下である、請求項1に記載の弾性波デバイス。
- 前記合金層の前記圧電基板側の面が、前記接合層の前記第2の主面に至っている、請求項1又は2に記載の弾性波デバイス。
- 前記合金層の前記圧電基板側の面が、前記接合層の第1の主面と第2の主面との間に位置している、請求項1又は2に記載の弾性波デバイス。
- 前記接合層の厚みが450nm以下である、請求項1~4のいずれか1項に記載の弾性波デバイス。
- 前記弾性波素子の外周を覆うように前記パッケージ基板上に設けられたモールド樹脂層をさらに備える、請求項1~5のいずれか1項に記載の弾性波デバイス。
- 前記接合層が、AlまたはAlとCu、W、Ti、Cr、Ta及びSiからなる群から選択された少なくとも1種との合金を含む、請求項1~6のいずれか1項に記載の弾性波デバイス。
- 前記バンプ電極が、Auを含む、請求項1~7のいずれか1項に記載の弾性波デバイス。
- 請求項1~8のいずれか1項に記載の弾性波デバイスの製造方法であって、
前記パッド電極の接合層の厚みが2000nm以下である弾性波素子を用意する工程と、
前記弾性波素子の前記パッド電極に、前記バンプ電極をバンプボンディングにより接合する工程と、
前記バンプ電極が接合された前記弾性波素子をフリップチップボンディングにより前記パッケージ基板に実装する工程とを備え、
前記弾性波素子を前記パッケージ基板に実装する工程において、フリップチップボンディングに際し、前記パッド電極の接合層と前記バンプ電極との接合部に、前記パッド電極の接合層の前記第2の主面までの距離が1950nm以下であり、かつ厚みが2100nm以下である合金層を形成するように加熱する、弾性波デバイスの製造方法。 - 前記パッド電極の接合層の厚みが2000nm以下である弾性波素子を用意する工程において、前記パッド電極の接合層の厚みが450nm以下である弾性波素子を用意する、請求項9に記載の弾性波デバイスの製造方法。
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