WO2015104917A1 - 半導体封止用液状エポキシ樹脂組成物及び樹脂封止半導体装置 - Google Patents
半導体封止用液状エポキシ樹脂組成物及び樹脂封止半導体装置 Download PDFInfo
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- WO2015104917A1 WO2015104917A1 PCT/JP2014/081557 JP2014081557W WO2015104917A1 WO 2015104917 A1 WO2015104917 A1 WO 2015104917A1 JP 2014081557 W JP2014081557 W JP 2014081557W WO 2015104917 A1 WO2015104917 A1 WO 2015104917A1
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- epoxy resin
- resin composition
- liquid epoxy
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- parts
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- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- IHPKGUQCSIINRJ-UHFFFAOYSA-N β-ocimene Natural products CC(C)=CCC=C(C)C=C IHPKGUQCSIINRJ-UHFFFAOYSA-N 0.000 description 1
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- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/61—Additives non-macromolecular inorganic
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/24—Di-epoxy compounds carbocyclic
- C08G59/245—Di-epoxy compounds carbocyclic aromatic
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3218—Carbocyclic compounds
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3227—Compounds containing acyclic nitrogen atoms
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3254—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen
- C08G59/3281—Epoxy compounds containing three or more epoxy groups containing atoms other than carbon, hydrogen, oxygen or nitrogen containing silicon
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/17—Amines; Quaternary ammonium compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/60—Additives non-macromolecular
- C09D7/63—Additives non-macromolecular organic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/296—Organo-silicon compounds
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- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a liquid epoxy resin composition for semiconductor encapsulation, a semiconductor device sealed with a cured product of the resin composition, and a method for manufacturing a resin-encapsulated semiconductor device.
- sealing molding can be performed without any major problem even at present, but if the diameter is 12 inches or more, the shrinkage stress of epoxy resin or the like after sealing is large, so that the semiconductor element is made of metal or the like. Problems such as peeling from the substrate occur, and mass production cannot be achieved.
- thermosetting resin when entirely sealed on the silicon interposer, a large warp is generated due to the difference in thermal expansion coefficient between silicon and the thermosetting resin. If the warpage is large, it cannot be applied to the subsequent polishing process or individualization process, which is a major technical problem.
- JP 2008-266512 A International Publication No. 2009/142065 JP 2012-149111 A
- the present invention has been made in view of the above circumstances, and is a liquid epoxy resin composition for semiconductor encapsulation that gives excellent cured products with excellent fluidity, reduced warpage when cured, and a cured product thereof. It is an object of the present invention to provide a sealed semiconductor device and a method for manufacturing a resin-sealed semiconductor device.
- a liquid epoxy resin composition using a spherical inorganic filler that has been surface-treated using a specific filler surface treatment material is a semiconductor.
- the device When the device is sealed, it has good water resistance and polishability, and even when sealed using a large wafer, it has excellent fluidity, reduced warpage, and is always highly versatile.
- the present invention has been found and the present invention has been made.
- the present invention provides the following liquid epoxy resin composition for semiconductor encapsulation, a semiconductor device, and a method for producing a resin-encapsulated semiconductor device.
- A a liquid epoxy resin containing no siloxane bond in the molecule
- B an acid anhydride curing agent
- C A spherical inorganic filler having an average particle size of 0.1 to 10 ⁇ m measured by a laser diffraction method as an inorganic filler, the surface of which is a (meth) acryl functional silane coupling agent represented by the following formula (1)
- the surface-treated spherical inorganic filler surface-treated at a ratio of 0.5 to 2.0 parts by mass with respect to 100 parts by mass of the spherical inorganic filler of component (C): the sum of components (A) and (B) 600 to 1,000 parts by mass with respect to 100 parts by mass, [Wherein, a is an integer of 0 to 3, R 1 is a monovalent saturated hydrocarbon group having 1
- component is bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene type epoxy resin, alicyclic epoxy resin and the following formula
- the component (D) is one or more selected from a phosphorus compound, a tertiary amine compound, and an imidazole compound, and the amount is 0.1 to 15 with respect to 100 parts by mass in total of the components (A) and (B).
- the liquid epoxy resin composition according to any one of [1] to [4], which is part by mass.
- Component (D) is triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, triphenylphosphine / triphenylborane, tetraphenylphosphine / tetraphenylfolate, triethylamine, benzyldimethyl 1 or more selected from amine, ⁇ -methylbenzyldimethylamine, 1,8-diazabicyclo [5.4.0] undecene-7, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole
- a method for manufacturing a resin-encapsulated semiconductor device wherein when a silicon wafer or an entire substrate on which one or more semiconductor elements are formed is collectively sealed with a cured product of an epoxy resin composition for semiconductor encapsulation, one or more semiconductor elements
- a silicon wafer or a substrate on which is formed a liquid epoxy resin composition for semiconductor encapsulation according to any one of [1] to [7] is coated under pressure, or is coated under reduced pressure in a vacuum atmosphere
- a method for producing a resin-encapsulated semiconductor device wherein a semiconductor element is encapsulated by heat-curing the resin composition, and then the cured resin layer is separated into pieces by polishing and dicing.
- a method for producing a resin-encapsulated semiconductor device according to [9] wherein a silicon wafer having a diameter of 12 inches to 20 inches is used.
- liquid epoxy resin composition for semiconductor encapsulation of the present invention a semiconductor element array or semiconductor element in which one or more semiconductor elements are mounted on an inorganic substrate, a metal substrate or an organic substrate with an adhesive (die bond agent) is formed. Even if a large-diameter silicon wafer is sealed, it is possible to provide a semiconductor device having almost no warpage when cooled after heat curing and having excellent heat resistance and moisture resistance.
- the sealing resin can be polished and diced easily.
- any epoxy resin can be used as long as it is liquid at room temperature, for example, bisphenol type such as bisphenol A type epoxy resin and bisphenol F type epoxy resin.
- liquid epoxy resins bisphenol A type epoxy resins, bisphenol F type epoxy resins, alicyclic epoxy resins and naphthalene type epoxy resins are particularly preferred, and their viscosity (25) measured by the method described in JIS K 7117-1 ° C.) is preferably 0.1 to 500 Pa ⁇ s, more preferably 1 to 200 Pa ⁇ s.
- An epoxy resin represented by the following formula is also preferably used.
- the content thereof is 25 to 100% by mass, more preferably 50 to 100% by mass, and still more preferably 75 to 100% by mass of the whole component (A). It is recommended that there be. If it is less than 25% by mass, the viscosity of the composition may increase or the heat resistance of the cured product may decrease.
- the liquid epoxy resin as component (A) has a hydrolyzable chlorine content of 1000 ppm or less, particularly 500 ppm or less, and preferably contains 10 ppm or less of sodium and potassium, respectively. If the hydrolyzable chlorine exceeds 1000 ppm or the sodium or potassium exceeds 10 ppm, the moisture resistance may deteriorate if the semiconductor device is left under high temperature and high humidity for a long time.
- the (B) curing agent used in the present invention is not particularly limited as long as it is an acid anhydride type and can cure the component (A), but is preferably liquid at room temperature or component (A). It is dissolved in the liquid and becomes liquid.
- Oct-5-ene-2,3-dicarboxylic anhydride methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, hexahydrophthalic anhydride, methyl hymic anhydride, pyromellitic dianhydride, maleated alloocimene Benzophenone tetracarboxylic dianhydride, 3,3 ′, 4,4′-biphenyltetrabisbenzophenone tetracarboxylic dianhydride,
- an acid anhydride represented by the following formula or a mixture of two or more thereof is preferably used.
- Me represents a methyl group
- Pr represents a propyl group.
- the amount of the mixture should be 5 to 75% by mass of the total component (B). desirable. If it is less than 5 mass%, adhesiveness will fall and it may deteriorate under high temperature, high humidity, such as PCT. If it exceeds 75% by mass, the adhesion is improved, but cracks may occur in tests such as a thermal shock test.
- the remaining curing agent is not particularly limited, but is preferably liquid at room temperature or becomes liquid when dissolved in component (A).
- the acid anhydride mentioned above is mentioned.
- at least one selected from methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride and hexahydrophthalic anhydride is preferable.
- carboxylic acid hydrazides such as dicyandiamide, adipic acid hydrazide, and isophthalic acid hydrazide may be used in combination.
- the amount of the component (B) is an amount effective for curing the component (A), and differs depending on the type of the component (B), but when the above-described acid anhydride is used as the component (B), Select so that the equivalent ratio of the carboxylic acid group derived from the acid anhydride group (—CO—O—CO—) in the curing agent to the epoxy group in the epoxy resin is in the range of 0.5 to 1.5. It is preferable to do. If it is less than the said minimum, an unreacted epoxy group remains, it becomes a fall of glass transition temperature, and there exists a possibility that adhesiveness may fall. If the upper limit is exceeded, the cured product becomes hard and brittle, and cracks may occur during reflow or temperature cycle tests.
- the (C) spherical inorganic filler blended in the composition of the present invention those usually blended in an epoxy resin composition can be used.
- examples thereof include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber and the like.
- the average particle diameter and shape of the inorganic filler is a sphere having an average particle diameter (cumulative weight average value or median diameter) measured by a laser diffraction method of 0.1 to 10 ⁇ m, preferably an average particle diameter of 1 to 5 ⁇ m.
- a fused silica having a mean particle size and shape is particularly preferred.
- the amount of component (C) is 600 to 1,000 parts by weight, preferably 700 to 900 parts by weight, based on 100 parts by weight of the total of components (A) and (B). If it is less than the above lower limit, warping after molding becomes large and sufficient strength cannot be obtained, and if it exceeds the above upper limit, the fluidity is remarkably deteriorated, and complete sealing of the semiconductor elements arranged on the submount is possible. become unable.
- the inorganic filler is preliminarily made of one or more silane coupling agents represented by the following formula (1).
- a is an integer of 0 to 3
- R 1 is a monovalent saturated hydrocarbon group having 1 to 4 carbon atoms
- R 2 is a divalent saturated hydrocarbon group having 1 to 10 carbon atoms
- R 3 is a single bond or A divalent saturated hydrocarbon group having 1 to 10 carbon atoms
- R 4 represents a hydrogen atom or a methyl group
- A represents a single bond or the following formula
- R 5 is a monovalent saturated hydrocarbon group having 1 to 4 carbon atoms
- B is O or S.
- R 6 is a monovalent saturated hydrocarbon group having 1 to 4 carbon atoms.
- a is preferably 0 to 3, more preferably 0 to 1.
- R 1 is preferably a methyl group or an ethyl group.
- R 2 is preferably an alkylene group having 1 to 10 carbon atoms, particularly 1 to 3 carbon atoms, and R 3 is preferably a single bond or an alkylene group having 1 to 10 carbon atoms, particularly 1 to 2 carbon atoms.
- A is as described above, and R 5 is preferably a methyl group or an ethyl group, and R 6 is preferably a methyl group or an ethyl group.
- silane coupling agents examples include 3-methacryloxypropyltrimethoxysilane (KBM503: manufactured by Shin-Etsu Chemical Co., Ltd.), 3-acryloxypropyltrimethoxysilane (KBM5103: manufactured by Shin-Etsu Chemical Co., Ltd.), and the like.
- R 4 is as described above. Me represents a methyl group.
- it is not limited to these.
- a silane coupling agent processing amount it is (C) component added to the thermosetting resin composition for semiconductor sealing.
- the amount is preferably 0.5 to 2.0 parts by mass, more preferably 0.5 to 1.5 parts by mass with respect to 100 parts by mass of the spherical inorganic filler.
- the curing accelerator as the component (D) is preferably the following.
- Phosphorus compounds such as triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, triphenylphosphine / triphenylborane, tetraphenylphosphine / tetraphenylborate, triethylamine, benzyldimethylamine, tertiary amine compounds such as ⁇ -methylbenzyldimethylamine, 1,8-diazabicyclo [5.4.0] undecene-7, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, etc. Imidazole compounds and the like can be used.
- the amount of the curing accelerator is an amount effective for accelerating the curing reaction between the epoxy resin and the curing agent, and preferably 0.1 to 15 parts by mass, more preferably 0.5 to 10 parts by mass.
- the liquid epoxy resin composition of the present invention is a known silicone-modified epoxy resin, silicone rubber, silicone oil, silicone gel, liquid polybutadiene rubber, methyl methacrylate-butadiene-styrene, etc. for the purpose of reducing the stress of the cured product.
- a flexible resin can be blended in an amount that does not impair the object of the present invention.
- silicone-modified epoxy resin a resin represented by the following formula (2) is preferable.
- R 7 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, preferably a hydrogen atom or a methyl group
- R 8 is an alkyl group having 1 to 4 carbon atoms, preferably a methyl group
- Q is an alkylene group having 3 to 6 carbon atoms, an oxyalkylene group, or a hydroxyoxyalkylene group.
- r is an integer of 4 to 199, preferably 19 to 130, more preferably an integer of 70 to 109
- p is an integer of 1 to 10
- q is an integer of 1 to 10, preferably 2 to 5. .
- the blending amount can be 1 to 50 parts by weight with respect to 100 parts by weight of the (A) epoxy resin, but the diorganosiloxane unit is particularly 1 to 20 parts by weight, particularly 2 It is preferable to blend so as to contain ⁇ 15 parts by mass, whereby the stress of the cured product can be lowered and the adhesion to the substrate can be improved.
- the sealing resin composition of the present invention may further contain various additives such as a release agent, a flame retardant, an ion trap agent, an antioxidant, an adhesion-imparting agent, a low stress agent, and a colorant as necessary.
- a release agent e.g., a flame retardant, an ion trap agent, an antioxidant, an adhesion-imparting agent, a low stress agent, and a colorant as necessary.
- Any known flame retardant can be used without any particular limitation.
- phosphazene compounds, silicone compounds, zinc molybdate-supported talc, zinc molybdate-supported zinc oxide, aluminum hydroxide, magnesium hydroxide, and molybdenum oxide are preferably used. It does not restrict
- liquid epoxy resin composition for semiconductor encapsulation of the present invention various additives can be further blended as necessary.
- an organic silicon-based adhesion improver having an epoxy group such as 3-glycidoxypropyltrimethoxysilane, and a colorant such as various carbon blacks such as acetylene black and furnace black are used as additives. It can be arbitrarily added and blended as long as the effect is not impaired.
- the composition of the present invention can be produced by the following method.
- an epoxy resin, a curing agent and a curing accelerator are stirred, dissolved, mixed, or dispersed while applying heat treatment simultaneously or separately as necessary.
- an inorganic filler is added to these mixtures and mixed, stirred, and dispersed.
- the apparatus for mixing, stirring, dispersing and the like is not particularly limited, but specifically, a raikai machine equipped with a stirring and heating apparatus, a two-roll, a three-roll, a ball mill, a continuous extruder, a planetary mixer, a massco A roider or the like can be used, and these devices may be used in appropriate combination.
- the epoxy resin composition of the present invention thus obtained can be performed using a conventionally employed molding method such as transfer molding, compression molding, injection molding, casting method, etc. It is desirable to perform molding. In this case, it is desirable that the molding temperature of the epoxy resin composition is 100 to 180 ° C. for 45 to 600 seconds, and the post cure is 140 to 180 ° C. for 1 to 6 hours.
- the epoxy resin composition of the present invention can reduce warpage when molded on 8 inch and 12 inch wafers.
- a semiconductor device that is excellent in mechanical strength and insulation and sealed with a cured product thereof is excellent in long-term reliability.
- productivity is excellent because molding defects such as flow marks and unfilling do not occur even when using equipment and molding conditions similar to those of epoxy resin compositions generally used as transfer molding and compression molding materials.
- a flow mark is a white flow mark that remains radially outward from the center of the molded product. When the flow mark is generated, there is a concern that the appearance is poor, the physical properties of the cured product vary due to non-uniform dispersion of silica, and the reliability is lowered.
- Unfilled refers to chipping of resin generated on the outer periphery of the wafer.
- the sensor erroneously recognizes the unfilled portion as a notch, and there is a concern that the alignment characteristics may be degraded.
- Epoxy resin A1 Bis A type epoxy resin (Epicoat 828: manufactured by Japan Epoxy Resin Co., Ltd.) (2) Epoxy resin A2: Naphthalene type epoxy resin (HP4032D: manufactured by DIC Corporation) (3) Epoxy resin A3: alicyclic epoxy resin (Celoxide 2021P: manufactured by Daicel Chemical Industries)
- Curing agent B1 Mixture of acid anhydrides represented by the following formula (YH307: manufactured by Japan Epoxy Resin Co., Ltd.)
- Curing agent B2 Mixture of acid anhydrides represented by the following formula (MH700: manufactured by Shin Nippon Rika Co., Ltd.)
- Curing agent B3 3,3′-diethyl-4,4′-diaminodiphenylmethane (trade name: Kayahard AA, manufactured by Nippon Kayaku Co., Ltd.), amine equivalent 63.5
- Treated silica A Silica treated silica B treated with 3-methacryloxypropyltrimethoxysilane (KBM503: Shin-Etsu Chemical Co., Ltd.) B: 3-acryloxypropyltrimethoxysilane (KBM5103: Shin-Etsu Chemical Co., Ltd.)
- Treated silica D silica surface-treated with a silane coupling agent represented by the following formula
- Treated silica E Silica-treated silica surface-treated with ⁇ -glycidoxypropyltrimethoxysilane (KBM403: manufactured by Shin-Etsu Chemical Co., Ltd.)
- F N-phenyl-3-aminopropyltrimethoxysilane (KBM573: Shin-Etsu Chemical Co., Ltd.) Further, 3-methacryloxypropyltrimeth
- Carbon black Denka Black (manufactured by Denki Kagaku Kogyo)
- Adhesion improver ⁇ -glycidoxypropyltrimethoxysilane (KBM403: manufactured by Shin-Etsu Chemical Co., Ltd.)
- Viscosity The viscosity was measured at room temperature (25 ° C.) using a Brookfield programmable rheometer type DV-III ultra viscometer (cone spindle CP-51 / 1.0 rpm).
- a test piece having a glass transition temperature and a linear expansion coefficient of 5 ⁇ 5 ⁇ 15 mm was set on a thermal dilatometer (Rigaku TMA8140C), and the temperature was increased from 25 ° C. to 300 ° C. at a temperature of 5 ° C./min and a load of 19.6 mN.
- Warpage measurement after compression molding of warpage measuring liquid resin composition using a wafer 8 inches / 725 .mu.m thick the resin thickness is set to 200 ⁇ m at APIC YAMADA CORPORATION Co. wafer mold (MZ407-1), compression time 600 seconds After molding at 120 ° C., the film was completely cured (post-cured) at 150 ° C./1 hour to confirm warpage.
- Flow mark / unfilled liquid resin composition is compression molded at 120 ° C. for 600 seconds to a resin thickness of 400 ⁇ m, and then completely cured (post cure) at 150 ° C./1 hour. The presence or absence of filling was evaluated.
- a semiconductor chip with a thickness of 220 ⁇ m and a 7 mm square die bond material is die-bonded under conditions of 10 N / 150 ° C./1.0 seconds.
- a 200 ⁇ m wafer with a semiconductor chip mounted thereon was obtained.
- a 200 ⁇ m wafer with a semiconductor chip was set in a compression molding machine, and an appropriate amount of the liquid resin composition was placed thereon, and cured at 110 ° C. for 10 minutes at a maximum molding pressure of 30 MPa to 15 MPa to obtain a wafer.
- the amount of the liquid resin composition was adjusted so that the resin thickness after molding was 400 ⁇ m ⁇ 10 ⁇ m.
- the wafer was heat-treated in an oven at 150 ° C. for 2 hours for post-curing, and then diced again into a 7.1 mm square by a dicing apparatus to obtain a semiconductor chip on which an individual resin having a thickness of 400 ⁇ m was mounted.
- Die bond material SFX-513S manufactured by Shin-Etsu Chemical Co., Ltd.
- Die bond material SFX-513S manufactured by Shin-Etsu Chemical Co., Ltd.
- Philip chip bonder Panasonic NM-SB50A
- die bonding was performed, heat treatment was performed in an oven at 150 ° C. for 4 hours, post-curing was performed, and a BT substrate with a resin-mounted semiconductor chip was obtained.
- a molding compound material is transfer molded (G-LINE press manufactured by Apic Yamada) on a BT substrate with a resin-mounted semiconductor chip, molded at 175 ° C., 90 seconds, 9 MPa, 1.5 mm thick, and again into a dicing machine
- a BT substrate semiconductor device
- the separated semiconductor device was subjected to moisture absorption treatment for 168 hours at 85 ° C. and 85% RH. This was passed through a reflow oven set in advance so that the maximum temperature of 260 ° C. and the time of 255 ° C. to 260 ° C. was 30 seconds ⁇ 3 seconds, and a solder heat resistance test (peeling inspection) was performed, and visually evaluated.
- TCT temperature cycle test
- a BT substrate with a semiconductor chip mounted with a molding compound resin and separated into pieces was subjected to a cycle of ⁇ 55 ° C./15 minutes ⁇ + 125 ° C./15 minutes (automatic) using a small thermal shock apparatus TSE-11 manufactured by ESPEC.
- TSE-11 small thermal shock apparatus manufactured by ESPEC.
- the state of peeling inside the semiconductor chip was confirmed without destruction using a 75 MHz probe with an ultrasonic flaw detector (QUANTUM 350 manufactured by Sonics) at 0 times.
- the same inspection was performed after 250 cycles, and the same inspection was repeatedly performed after 500 cycles and 700 cycles. The results are shown in Table 1.
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Abstract
Description
スマートフォン、タブレットなど携帯情報、通信端末は大容量の情報を高速で処理できるよう、TSV(スルー-シリコン-ビア)技術を用いて半導体素子を多層接続し、8インチ乃至12インチのシリコンインターポーザーにフリップチップ接続した後、熱硬化樹脂により、多層接続された半導体素子が複数個搭載されたインターポーザーごと封止する。半導体素子上の不要な硬化樹脂を研磨した後、個片化し、薄型で小型、多機能かつ高速処理可能な半導体装置を得ることができる。
しかしながら、シリコンインターポーザー上に熱硬化樹脂を全面封止した場合、シリコンと熱硬化性樹脂の熱膨張係数の違いから大きな反りが発生する。反りが大きいとその後の研磨工程や個片化工程に適用することができず、大きな技術課題となっている。
なお、本発明に関連する背景技術としては下記のものが挙げられる。
〔1〕
(A)分子中にシロキサン結合を含まない液状エポキシ樹脂、
(B)酸無水物系硬化剤、
(C)無機質充填材としてレーザー回折法で測定した平均粒径0.1~10μmの球状無機質充填材であり、その表面が下記式(1)で示される(メタ)アクリル官能性シランカップリング剤により、(C)成分の球状無機質充填材100質量部に対して0.5~2.0質量部の割合で表面処理された表面処理球状無機質充填材:(A),(B)成分の合計100質量部に対して600~1,000質量部、
(式中、R5は炭素数1~4の1価飽和炭化水素基、BはO又はSである。)
(式中、R6は炭素数1~4の1価飽和炭化水素基である。)
で示されるいずれかの基である。]
(D)硬化促進剤
を含有してなることを特徴とする半導体封止用液状エポキシ樹脂組成物。
〔2〕
(A)成分が、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ナフタレン型エポキシ樹脂、脂環式エポキシ樹脂及び下記式
で示されるエポキシ樹脂から選ばれる1種以上である、〔1〕記載の液状エポキシ樹脂組成物。
〔3〕
(B)成分が、下記式で表される酸無水物から選択される1種以上である、〔1〕又は〔2〕記載の半導体封止用液状エポキシ樹脂組成物。
〔4〕
下記平均組成式(2)
で示されるシリコーン変性エポキシ樹脂を、(A)成分100質量部に対して1~50質量部配合してなる〔1〕~〔3〕のいずれかに記載の液状エポキシ樹脂組成物。
〔5〕
(D)成分がリン系化合物、第3級アミン化合物、イミダゾール化合物から選択される1以上であり、その量が(A)及び(B)成分の合計100質量部に対して0.1~15質量部である〔1〕~〔4〕のいずれかに記載の液状エポキシ樹脂組成物。
〔6〕
(D)成分が、トリフェニルホスフィン、トリブチルホスフィン、トリ(p-メチルフェニル)ホスフィン、トリ(ノニルフェニル)ホスフィン、トリフェニルホスフィン・トリフェニルボラン、テトラフェニルホスフィン・テトラフェニルホレート、トリエチルアミン、ベンジルジメチルアミン、α-メチルベンジルジメチルアミン、1,8-ジアザビシクロ[5.4.0]ウンデセン-7、2-メチルイミダゾール、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾールから選択される1以上である〔5〕記載の液状エポキシ樹脂組成物。
〔7〕
JIS K 7117-1に記載の方法で測定した25℃における粘度が5~1000Pa・sである、〔1〕~〔6〕のいずれかに記載の液状エポキシ樹脂組成物。
〔8〕
〔1〕~〔7〕のいずれかに記載の液状エポキシ樹脂組成物の硬化物で封止された半導体装置。
〔9〕
樹脂封止型半導体装置の製造方法であって、一個以上の半導体素子を形成したシリコンウエハー又は基板全体を半導体封止用エポキシ樹脂組成物の硬化物で一括封止するに際し、一個以上の半導体素子を形成したシリコンウエハー又は基板の片面に〔1〕~〔7〕のいずれかに記載の半導体封止用液状エポキシ樹脂組成物を押圧下に被覆するか、又は真空雰囲気下で減圧被覆し、該樹脂組成物を加熱硬化して半導体素子を封止し、その後、硬化樹脂層を研磨加工、ダイシングすることで個片化することを特徴とする樹脂封止型半導体装置の製造方法。
〔10〕
直径12インチ以上20インチ以下のシリコンウエハーを用いることを特徴とする〔9〕記載の樹脂封止型半導体装置の製造方法。
本発明組成物に用いられる(A)液状エポキシ樹脂としては、室温で液状であればいずれのエポキシ樹脂も使用することができ、例えば、ビスフェノールA型エポキシ樹脂及びビスフェノールF型エポキシ樹脂等のビスフェノール型エポキシ樹脂;フェノールノボラック型エポキシ樹脂及びクレゾールノボラック型エポキシ樹脂等のノボラック型エポキシ樹脂;ナフタレン型エポキシ樹脂;ビフェニル型エポキシ樹脂;シクロペンタジエン型エポキシ樹脂、脂環式エポキシ樹脂等、及びこれらの混合物が挙げられる。
上記液状エポキシ樹脂のうち、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、脂環式エポキシ樹脂及びナフタレン型エポキシ樹脂が特に好ましく、それらのJIS K 7117-1に記載の方法で測定した粘度(25℃)は、好ましくは0.1~500Pa・s、より好ましくは1~200Pa・sである。
(B)成分が上記混合物を5~75質量%含む場合、残りの硬化剤としては、特に制限されないが、好ましくは、室温で液状であるか、(A)成分に溶解して液状になるものであり、例えば、上記で挙げた酸無水物が挙げられる。特に、メチルテトラヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸及びヘキサヒドロ無水フタル酸から選択される1種以上が好ましい。なお、ジシアンジアミドやアジピン酸ヒドラジド、イソフタル酸ヒドラジドなどのカルボン酸ヒドラジドを併用することは差し支えない。
無機質充填材の平均粒径及び形状は、レーザー回折法によって測定した平均粒径(累積重量平均値又はメジアン径)0.1~10μm、好ましくは平均粒径1~5μmの球状であり、このような平均粒径及び形状を有する溶融シリカが特に好ましい。
(C)成分の量は、(A)及び(B)成分の合計100質量部に対して600~1,000質量部であり、好ましくは700~900質量部である。上記下限未満では、成形後の反りが大きくなり、十分な強度を得ることができず、上記上限を超えると、流動性が著しく悪くなり、サブマウント上に配列された半導体素子の完全封止ができなくなる。
(式中、aは0~3の整数、R1は炭素数1~4の1価飽和炭化水素基、R2は炭素数1~10の2価飽和炭化水素基、R3は単結合又は炭素数1~10の2価飽和炭化水素基、R4は水素原子又はメチル基を示す。また、Aは単結合又は下記式
(式中、R5は炭素数1~4の1価飽和炭化水素基、BはO又はSである。)
(式中、R6は炭素数1~4の1価飽和炭化水素基である。)
で示されるいずれかの基である。
R2は、好ましくは炭素数1~10、特に1~3のアルキレン基であり、R3は、好ましくは単結合又は炭素数1~10、特に1~2のアルキレン基である。
Aは上記の通りであるが、R5はメチル基、エチル基が好ましく、またR6はメチル基、エチル基が好ましい。
で示されるものが挙げられるが、これらに限定されるものではない。
ポリシロキサン量=(ポリシロキサン部分の分子量/シリコーン変性エポキシ樹脂の分子量)×添加量
難燃剤としては特に制限されず公知のものを全て使用することができる。中でもホスファゼン化合物、シリコーン化合物、モリブデン酸亜鉛担持タルク、モリブデン酸亜鉛担持酸化亜鉛、水酸化アルミニウム、水酸化マグネシウム、酸化モリブデンが好ましく用いられる。
イオントラップ剤としては特に制限されず、公知のものを全て使用することができる。ハイドロタルサイト類、水酸化ビスマス化合物、希土類酸化物等が好ましく用いられる。
この場合、エポキシ樹脂組成物の成形温度は100~180℃で45~600秒間、ポストキュアーは140~180℃で1~6時間行うことが望ましい。
フローマークとは、成形物の中心から外側に向かって放射状に残る白い流動痕のことである。フローマークが発生すると外観不良や、シリカ不均一分散による硬化物物性のバラつきや、それに伴う信頼性の低下等が懸念される。
(1)エポキシ樹脂A1:ビスA型エポキシ樹脂(エピコート828:ジャパンエポキシレジン株式会社製)
(2)エポキシ樹脂A2:ナフタレン型エポキシ樹脂(HP4032D:DIC株式会社製)
(3)エポキシ樹脂A3:脂環式エポキシ樹脂(セロキサイド2021P:ダイセル化学工業社製)
(1)硬化剤B1:下記式で示される酸無水物の混合物(YH307:ジャパンエポキシレジン株式会社製)
硬化剤B2:下記式で示される酸無水物の混合物(MH700:新日本理化株式会社製)
硬化剤B3:3,3’-ジエチル-4,4’-ジアミノジフェニルメタン(商品名:カヤハードAA、日本化薬(株)製)、アミン当量63.5
ベース球状溶融シリカ(アドマテックス製、平均粒径5μm)100部に対して、0.75部のシランカップリング剤で乾式表面処理を行い、下記処理シリカA~Gを作成した。なお、比較例6には、無処理の上記シリカを使用した。
処理シリカA:3-メタクリロキシプロピルトリメトキシシラン(KBM503:信越化学工業株式会社製)で表面処理されたシリカ
処理シリカB:3-アクリロキシプロピルトリメトキシシラン(KBM5103:信越化学工業株式会社製)で表面処理されたシリカ
処理シリカC:下記式で示されるシランカップリング剤で表面処理されたシリカ
処理シリカD:下記式で示されるシランカップリング剤で表面処理されたシリカ
処理シリカE:γ-グリシドキシプロピルトリメトキシシラン(KBM403:信越化学工業株式会社製)で表面処理されたシリカ
処理シリカF:N-フェニル-3-アミノプロピルトリメトキシシラン(KBM573:信越化学工業株式会社製)で表面処理されたシリカ
更にベース球状溶融シリカ(龍森製、平均粒径12μm)100部に対して、3-メタクリロキシプロピルトリメトキシシラン(KBM503:信越化学工業株式会社製)0.75部で乾式表面処理を行い、処理シリカGを作成した。
(D)硬化促進剤:ノバキュアHX3088(旭化成イーマテリアルズ社製)
(1)カーボンブラック:デンカブラック(電気化学工業製)
(2)接着性向上剤:γ-グリシドキシプロピルトリメトキシシラン(KBM403:信越化学工業株式会社製)
(3)シリコーン変性エポキシ樹脂
常温(25℃)での粘度測定は、ブルックフィールド・プログラマブル レオメーター形式:DV-IIIウルトラ粘度計(コーンスピンドルCP-51/1.0rpm)にて行った。
5×5×15mmの試験片を熱膨張計(Rigaku TMA8140C)にセットし、昇温5℃/分、荷重19.6mNで25℃から300℃まで測定した。寸法変化と温度のグラフを作成し、変曲点の温度以下で寸法変化-温度曲線の接線が得られる任意の温度2点A1,A2、変曲点の温度以上で接線が得られる任意の2点B1,B2を選択し、A1,A2を結ぶ直線とB1,B2を結ぶ直線の交点をガラス転移温度とした。A1~A2の傾きをTg以下の線膨張係数、B1~B2の傾きをTg以上の線膨張係数とした(図1)。
液状樹脂組成物のコンプレッション成形後の反り測定は、ウエハー8インチ/725μm厚を使用し、アピックヤマダ社製ウエハーモールド(MZ407-1)にて樹脂厚みを200μmに設定し、コンプレッション時間600秒で120℃にて成形した後、150℃/1時間にて完全硬化(ポストキュアー)させて、反りを確認した。
液状樹脂組成物を120℃で600秒間、樹脂厚み400μmにコンプレッション成形後、150℃/1時間にて完全硬化(ポストキュアー)させた後、外観目視によるフローマーク、未充填の有無を評価した。
液状樹脂組成物を120℃で600秒間、樹脂厚み400μmにコンプレッション成形後、150℃/1時間にて完全硬化(ポストキュアー)させた後、研磨性の確認を行い、下記の基準で評価した。
(DISCO AUTOMATIC GRINDER DAG810)
条件Grinding 1.0μm/s、Spindle speed 4,800rpm、Stage speed 300rpmにて行った。
良好:600メッシュ研磨が可能であり、かつ研磨時の負荷電流値が8.0A以下で安定している。
NG:安定的に600メッシュ研磨ができない。
液状樹脂組成物又はペレット状樹脂組成物を120℃で600秒間、樹脂厚み400μmにコンプレッション成形後、150℃/1時間にて完全硬化(ポストキュアー)させた後、ダイシング性の確認を行い、下記の基準で評価した。
(DISCO A540)
良好:断面を観察、シリコンがチッピングしたり、樹脂とシリコン界面に剥離が発生しない場合
NG:断面を観察、シリコンがチッピングしたり、樹脂とシリコン界面に剥離が発生した場合
厚み200μm、8インチウエハーに20μm厚にてダイボンド材SFX-513M1(信越化学工業株式会社製)を使用して(厚膜スクリーン印刷機 THICK FILM PRINTER タイプMC212)印刷し、Bステージ状態にて7mm角大にダイシング装置にてダイシングすると共に、半導体チップを準備した。
次に、厚み200μm、8インチウエハー上にフィリップチップボンダー(Panasonic NM-SB50A)を使用して、厚さ220μm、7mm角ダイボンド材付き半導体チップを10N/150℃/1.0秒の条件でダイボンドを行い、半導体チップを搭載した200μmウエハーを得た。
半導体チップ付き200μmウエハーを圧縮成形機にセットし、液状樹脂組成物を適量載せ、成形圧力最大30MPaから15MPaで、110℃、10分で硬化を行い、ウエハーを得た。液状樹脂組成物の量は、成形後の樹脂厚みが400μm±10μmとなるように調整した。そのウエハーを150℃、2時間オーブンで熱処理して後硬化を行った後、再びダイシング装置にて7.1mm角にダイシングし、個片化した厚み400μmの樹脂を搭載した半導体チップを得た。
個片化した樹脂搭載半導体チップをBT基盤上にフィリップチップボンダー(Panasonic NM-SB50A)にて、10N/150℃/1.5秒の条件でダイボンド材SFX-513S(信越化学工業株式会社製)でダイボンドを行い、150℃、4時間オーブンで熱処理し、後硬化を行い、樹脂搭載半導体チップ付きBT基板を得た。
樹脂搭載半導体チップ付きBT基板上にモールディングコンパウンド材をトランスファー成形(G-LINEプレス アピックヤマダ社製)し、成形条件175℃、90秒、9MPaにて1.5mm厚にて成形し、再びダイシング装置にて10.0mm角にダイシングし、個片化したモールディングコンパウンド樹脂搭載半導体チップ付きBT基板(半導体装置)を得た。
個片化した上記半導体装置を85℃、85%RHの条件で168時間吸湿処理した。これを、最大温度260℃、255~260℃の時間が30秒±3秒となるように予め設定したリフローオーブンに3回通し、半田耐熱試験(剥離検査)を行い、目視にて評価した。
個片化したモールディングコンパウンド樹脂搭載半導体チップ付きBT基板を、ESPEC社製小型冷熱衝撃装置TSE-11を使用し、-55℃/15分⇒+125℃/15分(自動)のサイクルを行った。まず、0回で超音波探傷装置(ソニックス社製 QUANTUM350)にて75MHzのプローブを用いて、半導体チップ内部の剥離状態を無破壊で確認した。次に、250サイクル後に同様の検査を行い、500サイクル後、700サイクル後と繰り返し同様の検査を行った。結果を表1に示す。
半導体チップの面積に対して剥離面積の合計がおよそ5%未満の場合は微小剥離として「剥離なし(OK)」、5%以上の剥離面積がある場合は「剥離あり(NG)」として評価した。
Claims (10)
- (A)分子中にシロキサン結合を含まない液状エポキシ樹脂、
(B)酸無水物系硬化剤、
(C)無機質充填材としてレーザー回折法で測定した平均粒径0.1~10μmの球状無機質充填材であり、その表面が下記式(1)で示される(メタ)アクリル官能性シランカップリング剤により、(C)成分の球状無機質充填材100質量部に対して0.5~2.0質量部の割合で表面処理された表面処理球状無機質充填材:(A),(B)成分の合計100質量部に対して600~1,000質量部、
(式中、R5は炭素数1~4の1価飽和炭化水素基、BはO又はSである。)
(式中、R6は炭素数1~4の1価飽和炭化水素基である。)
で示されるいずれかの基である。]
(D)硬化促進剤
を含有してなることを特徴とする半導体封止用液状エポキシ樹脂組成物。 - 下記平均組成式(2)
で示されるシリコーン変性エポキシ樹脂を、(A)成分100質量部に対して1~50質量部配合してなる請求項1~3のいずれか1項記載の液状エポキシ樹脂組成物。 - (D)成分がリン系化合物、第3級アミン化合物、イミダゾール化合物から選択される1以上であり、その量が(A)及び(B)成分の合計100質量部に対して0.1~15質量部である請求項1~4のいずれか1項記載の液状エポキシ樹脂組成物。
- (D)成分が、トリフェニルホスフィン、トリブチルホスフィン、トリ(p-メチルフェニル)ホスフィン、トリ(ノニルフェニル)ホスフィン、トリフェニルホスフィン・トリフェニルボラン、テトラフェニルホスフィン・テトラフェニルホレート、トリエチルアミン、ベンジルジメチルアミン、α-メチルベンジルジメチルアミン、1,8-ジアザビシクロ[5.4.0]ウンデセン-7、2-メチルイミダゾール、2-フェニルイミダゾール、2-フェニル-4-メチルイミダゾールから選択される1以上である請求項5記載の液状エポキシ樹脂組成物。
- JIS K 7117-1に記載の方法で測定した25℃における粘度が5~1000Pa・sである、請求項1~6のいずれか1項記載の液状エポキシ樹脂組成物。
- 請求項1~7のいずれか1項に記載の液状エポキシ樹脂組成物の硬化物で封止された半導体装置。
- 樹脂封止型半導体装置の製造方法であって、一個以上の半導体素子を形成したシリコンウエハー又は基板全体を半導体封止用エポキシ樹脂組成物の硬化物で一括封止するに際し、一個以上の半導体素子を形成したシリコンウエハー又は基板の片面に請求項1~7のいずれか1項に記載の半導体封止用液状エポキシ樹脂組成物を押圧下に被覆するか、又は真空雰囲気下で減圧被覆し、該樹脂組成物を加熱硬化して半導体素子を封止し、その後、硬化樹脂層を研磨加工、ダイシングすることで個片化することを特徴とする樹脂封止型半導体装置の製造方法。
- 直径12インチ以上20インチ以下のシリコンウエハーを用いることを特徴とする請求項9記載の樹脂封止型半導体装置の製造方法。
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