WO2014206166A1 - 一种大功率led灯降温器件及其制作方法 - Google Patents
一种大功率led灯降温器件及其制作方法 Download PDFInfo
- Publication number
- WO2014206166A1 WO2014206166A1 PCT/CN2014/078443 CN2014078443W WO2014206166A1 WO 2014206166 A1 WO2014206166 A1 WO 2014206166A1 CN 2014078443 W CN2014078443 W CN 2014078443W WO 2014206166 A1 WO2014206166 A1 WO 2014206166A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- type semiconductor
- semiconductor element
- led lamp
- power led
- cooling device
- Prior art date
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 146
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000011159 matrix material Substances 0.000 claims abstract description 7
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims abstract 8
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims abstract 8
- 239000013078 crystal Substances 0.000 claims abstract 6
- 239000000919 ceramic Substances 0.000 claims description 15
- 235000012431 wafers Nutrition 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008187 granular material Substances 0.000 claims description 4
- 239000004519 grease Substances 0.000 claims description 4
- 238000005057 refrigeration Methods 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims 2
- 239000005751 Copper oxide Substances 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 238000005520 cutting process Methods 0.000 abstract 1
- 238000005453 pelletization Methods 0.000 abstract 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAAXRTPGRLVPFH-UHFFFAOYSA-N [Bi].[Cu] Chemical compound [Bi].[Cu] QAAXRTPGRLVPFH-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/51—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes
- F21V29/52—Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes electrically powered, e.g. refrigeration systems
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/54—Cooling arrangements using thermoelectric means, e.g. Peltier elements
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V29/00—Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
- F21V29/50—Cooling arrangements
- F21V29/70—Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/645—Heat extraction or cooling elements the elements being electrically controlled, e.g. Peltier elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
Definitions
- the invention relates to a high-power LED lamp cooling device and a manufacturing method thereof, and belongs to the technical field of high-power LED lamp cooling and cooling. Background technique
- the luminous efficiency of the LED lamp depends not only on the quality of the LED bulb, but more importantly, on the temperature at which the LED lamp operates. Especially when the high-power LED lamp is in operation, its temperature rises above 55 °C, and each time it rises, The luminous efficiency will drop by about 2%, so it is very important to cool down the LED lamp, especially the high-power LED lamp.
- high-power LED lamps are often cooled by air-cooling or by means of semiconductor cooling devices.
- the P-type semiconductor element and the N-type semiconductor element can be used to produce different temperatures of the hot end and the cold end at both ends when they are energized, and have been widely used in the field of manufacturing semiconductor refrigeration or heating devices.
- the direction of the N-type or P-type semiconductor element is often not considered, that is, when the N-type or P-type semiconductor element is connected, the N-type or P-type semiconductor is not considered.
- the head and the end of the component, but the interconnection between the N-type or P-type semiconductor components at any end, the connection of the non-head-end end not only reduces the working efficiency of the semiconductor component, but also increases the energy consumption of the cooling device. And also make the cooling device produced not reach the required cooling temperature.
- the cooling and cooling device produced by this conventional method generally has a temperature difference of only about 60 degrees between the hot end and the cold end. Therefore, the existing cooling and cooling device fabricated using a P-type semiconductor element and an N-type semiconductor element is not ideally used, and is particularly unsuitable for use as a high-power LED lamp cooling device. Summary of the invention
- the object of the present invention is to provide a high-power LED lamp cooling device with good cooling effect, high working efficiency and low energy consumption, and a manufacturing method thereof, to overcome the deficiencies of the prior art.
- the present invention is achieved as follows:
- the method for fabricating a high-power L ED lamp cooling device of the present invention comprises: using an N-type semiconductor element and a P-type semiconductor element as a cooling element of a high-power LED lamp cooling device, When an N-type semiconductor element and a P-type semiconductor element are used as a cooling element of a high-power LED lamp cooling device, an N-type semiconductor element is fabricated in advance. Or a P-type semiconductor element, a semiconductor ingot made of an N-type semiconductor element or a P-type semiconductor element is formed into a cone-shaped ingot having a large diameter and a small diameter at the other end, and then the cone-shaped semiconductor ingot is sliced.
- a wafer having the same thickness is obtained, the small diameter end of the wafer is used as the head end, the large diameter end is used as the tail end, and the tail end face of each wafer is colored with a mark number; then the conical surface of each wafer is cut and granulated.
- Each of the wafers is cut into granules into the same polygonal cylinder shape, and the semiconductor of the polygonal cylinder shape is an N-type semiconductor element or a P-type semiconductor element provided with a head end and a tail end, and then the N-type semiconductor element is And P-type semiconductor elements are arranged in a matrix arrangement between two yttria ceramic sheets provided with conductive circuits, such that each column of N-type semiconductor elements and P-type semiconductor elements are connected in series, and each column is connected in series with N-type The head end of the semiconductor element is connected to the tail end of the P-type semiconductor element or the tail end of the N-type semiconductor element is connected to the head end of the P-type semiconductor element.
- the above polygonal cylinder is a quadrangular cylinder, a square cylinder, a regular hexagon cylinder, a regular octagonal cylinder, a regular decagon cylinder or a regular dodecagonal cylinder.
- a high-power LED lamp cooling device constructed according to the above method, comprising N-type semiconductor components and P-types arranged in a matrix arrangement between two upper yttria ceramic sheets and a lower yttria ceramic sheet provided with a conductive circuit a semiconductor element having conductive color marks on one end surface of the N-type semiconductor element and the P-type semiconductor element, the end face provided with the color mark being the end of the N-type semiconductor element or the P-type semiconductor element, N-type
- the other end of the semiconductor element or the P-type semiconductor element having no color mark is a head end, and each column of the N-type semiconductor element and the P-type semiconductor element respectively pass through the upper conductive sheet and the set as a conductive circuit provided on the upper yttria ceramic sheet.
- the lower conductive sheets as the conductive circuits on the lower yttria ceramic sheets are connected in series with each other, and the head ends of the N-type semiconductor elements of each column are connected to the tail ends of the P-type semiconductor elements or the tail ends of the N-type semiconductor elements of each column and the P-type The head ends of the semiconductor elements are connected, and the N-type semiconductor elements and the two outermost ends of the P-type semiconductor elements are connected in series in each column. Electrical sheet or outer most ends of the two lower guide wire is provided for connection to a DC power supply on-chip power.
- a beryllium copper plate compact is attached to the upper surface of the upper cerium oxide ceramic piece, an aluminum pedestal for heat dissipation is provided on the bismuth copper plate compact, and a graphene thermal grease layer is laminated on the bottom surface of the lower yttria ceramic piece.
- a heat pipe mounting hole for mounting a heat pipe of the radiator is provided on the above-mentioned aluminum base.
- the above heat conducting temperature equalizing plate is a printed circuit board provided with a high power LED lamp circuit for mounting an LED bulb.
- the present invention performs color-code processing on the semiconductor ingot slicing on the basis of the conventional fabrication of the N-type semiconductor element and the P-type semiconductor element, thereby being able to easily recognize the N-type semiconductor.
- the head end or the tail end of the element or the P-type semiconductor element, and the direction in which the head end or the tail end is aligned coincides with the arrangement direction on the ingot when not sliced.
- the semiconductor device of the present invention when used, the tail end and the head end can be easily distinguished, thereby avoiding the inability to distinguish the head end from the prior art when connecting the N-type and P-type semiconductor elements.
- the tail end, and the resulting head and tail are confused with each other.
- the order connection between the head end and the tail end can be conveniently performed, thereby effectively improving the working efficiency of each of the N-type and P-type semiconductor elements, and Effectively improve the cooling effect of the entire cooling and cooling device.
- the high-power LED lamp cooling device manufactured by the invention has the temperature difference between the cold end and the hot end of 73 ⁇ 78 degrees, and the cooling device of the invention is installed on a high-power LED lamp of 200 watts, which can ensure the large
- the circuit board of the power LED lamp is stable at a temperature below 45 °C for a long time, which effectively improves the working efficiency of the high-power LED lamp and prolongs the service life of the high-power LED lamp.
- the invention not only has the advantages of good cooling effect, high working efficiency and low energy consumption, but also has the advantages of effectively reducing the light decay of the high-power LED and prolonging the service life of the high-power LED lamp. . DRAWINGS
- Figure 1 is a schematic view of the structure of the present invention.
- a method for fabricating a high-power LED lamp cooling device includes: using an N-type semiconductor element and a P-type semiconductor element as a cooling element of a high-power LED lamp cooling device, using an N-type When a semiconductor element and a P-type semiconductor element are used as a refrigerating element of a high-power LED lamp cooling device, an N-type semiconductor element or a P-type semiconductor element is fabricated in advance when an N-type semiconductor element or a P-type semiconductor element is fabricated by a conventional process.
- the semiconductor ingot is made into a cone-shaped ingot with a large diameter and a small diameter at the other end, and then the cone-shaped semiconductor ingot is sliced to obtain a wafer having the same thickness, and the small diameter end of the wafer is used as a head end and a large diameter end.
- the color mark number is printed on the tail end surface of each wafer.
- the color made of conductive material such as a conductive material made of copper, aluminum or silver
- the conical surface of each wafer is cut and granulated, and each wafer is cut into granules into the same polygonal cylinder shape.
- the shape of the polygonal cylinder can be determined according to the needs of use, and can usually be made into a quadrilateral cylinder, a square cylinder, a regular hexagon cylinder, a regular octagonal cylinder, a regular hex cylinder or a regular dodecagonal column.
- the semiconductor of the polygonal pillar shape thus produced is an N-type semiconductor element or a P-type semiconductor element provided with a head end and a tail end; and then the N-type semiconductor element and the P-type semiconductor element are arranged in a conventional matrix.
- each column of N-type semiconductor elements and P-type semiconductor elements are connected in series, and the head end of each column of N-type semiconductor elements and P-type semiconductor elements are connected in series
- the tail end is connected or the tail end of the N-type semiconductor element is connected to the head end of the P-type semiconductor element.
- FIG. 1 A schematic diagram of a high-power LED lamp cooling device of the present invention constructed according to the above method is shown in FIG. 1.
- the temperature-lowering device comprises two matrixes of upper yttria ceramic sheets 4 provided with conductive circuits arranged in a matrix arrangement.
- the N-type semiconductor element 6 and the P-type semiconductor element 7 between the lower yttria ceramic sheets 9 are provided with conductive color markings on one end faces of the N-type semiconductor element 6 and the P-type semiconductor element 7, which are provided
- the end face of the color mark is the tail end of the N-type semiconductor element 6 or the P-type semiconductor element 7, and the other end of the N-type semiconductor element 6 or the P-type semiconductor element 7 without the color mark is the head end, and the N-type semiconductor of each column
- the element 6 and the P-type semiconductor element 7 are connected in series with each other through an upper conductive sheet 5 provided on the upper yttria ceramic sheet 4 and a lower conductive sheet 8 provided on the lower yttria ceramic sheet 9, and
- a wire 12 (shown in FIG.
- the heat-dissipating aluminum base 1 is simultaneously formed on the aluminum base 1 with a heat pipe mounting hole 2 for mounting the heat-dissipating tube of the heat sink; on the bottom surface of the lower yttria ceramic sheet 9, a heat conductive grease layer 10 is bonded to each other.
- the warm plate 11 is formed on the heat conduction temperature equalizing plate 11 by a conventional high-power LED lamp circuit for mounting a high-power LED lamp circuit for the LED light bulb.
- the heat-conductive temperature equalizing plate 11 can also be directly used for the existing one.
- the high-power LED lamp cooling device of the present invention it is only necessary to install the device in the lamp cover of the high-power LED lamp, and install the LED bulb on the heat conduction temperature equalizing plate 11 while fixing the heat pipe of the heat sink at the same time.
- the heat pipe mounting hole 2 of the aluminum base 1 can be used by connecting the wire 12 and the power supply line on the heat conduction temperature equalizing plate 11 to the DC power source, respectively.
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016522205A JP6151449B2 (ja) | 2013-06-25 | 2014-05-26 | 高出力ledランプ冷却デバイス及びその製造方法 |
DK14818281.9T DK3015765T3 (en) | 2013-06-25 | 2014-05-26 | Cooling device for high-power LED lamp and method for making it |
AU2014301912A AU2014301912B2 (en) | 2013-06-25 | 2014-05-26 | High-power LED lamp cooling device and manufacturing method therefor |
EP14818281.9A EP3015765B1 (en) | 2013-06-25 | 2014-05-26 | High-power led lamp cooling device and manufacturing method therefor |
US14/998,284 US9412925B2 (en) | 2013-06-25 | 2015-12-24 | High-power LED lamp cooling device and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310257924.5A CN103353098B (zh) | 2013-06-25 | 2013-06-25 | 一种大功率led灯降温器件及其制作方法 |
CN201310257924.5 | 2013-06-25 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/998,284 Continuation US9412925B2 (en) | 2013-06-25 | 2015-12-24 | High-power LED lamp cooling device and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
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WO2014206166A1 true WO2014206166A1 (zh) | 2014-12-31 |
Family
ID=49309494
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2014/078443 WO2014206166A1 (zh) | 2013-06-25 | 2014-05-26 | 一种大功率led灯降温器件及其制作方法 |
Country Status (7)
Country | Link |
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US (1) | US9412925B2 (zh) |
EP (1) | EP3015765B1 (zh) |
JP (1) | JP6151449B2 (zh) |
CN (1) | CN103353098B (zh) |
AU (1) | AU2014301912B2 (zh) |
DK (1) | DK3015765T3 (zh) |
WO (1) | WO2014206166A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103353098B (zh) | 2013-06-25 | 2015-09-23 | 陈志明 | 一种大功率led灯降温器件及其制作方法 |
CN103779288A (zh) * | 2014-01-18 | 2014-05-07 | 西安交通大学 | 一种基于双电源的串并联内耦式半导体制冷模块 |
CN105376971A (zh) * | 2015-10-08 | 2016-03-02 | 京东方科技集团股份有限公司 | 移动电子设备的外壳和移动电子设备 |
CN105202800A (zh) * | 2015-10-24 | 2015-12-30 | 唐玉敏 | 一种半导体制冷制热片 |
JP7151068B2 (ja) * | 2016-12-26 | 2022-10-12 | 三菱マテリアル株式会社 | ケース付熱電変換モジュール |
US11616185B2 (en) * | 2017-06-01 | 2023-03-28 | Qualcomm Incorporated | Energy harvesting device for electronic devices |
US20190178486A1 (en) * | 2017-12-13 | 2019-06-13 | Wei Chen | Module for led lighting fixture |
CN111726934B (zh) * | 2020-07-02 | 2022-11-11 | 西安电子科技大学芜湖研究院 | 一种利用半导体降温的散热驱动板 |
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AU2014301912A1 (en) | 2016-02-11 |
DK3015765T3 (en) | 2018-11-26 |
EP3015765A4 (en) | 2016-06-29 |
JP2016530674A (ja) | 2016-09-29 |
CN103353098A (zh) | 2013-10-16 |
US9412925B2 (en) | 2016-08-09 |
US20160133811A1 (en) | 2016-05-12 |
JP6151449B2 (ja) | 2017-06-21 |
EP3015765B1 (en) | 2018-08-08 |
EP3015765A1 (en) | 2016-05-04 |
AU2014301912B2 (en) | 2017-10-19 |
CN103353098B (zh) | 2015-09-23 |
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