CN103353098B - 一种大功率led灯降温器件及其制作方法 - Google Patents

一种大功率led灯降温器件及其制作方法 Download PDF

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CN103353098B
CN103353098B CN201310257924.5A CN201310257924A CN103353098B CN 103353098 B CN103353098 B CN 103353098B CN 201310257924 A CN201310257924 A CN 201310257924A CN 103353098 B CN103353098 B CN 103353098B
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led lamp
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CN103353098A (zh
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陈志明
顾伟
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SUZHOU WEI YUAN NEW MATERIAL TECHNOLOGY Co Ltd
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    • HELECTRICITY
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V29/52Cooling arrangements using condensation or evaporation of a fluid, e.g. heat pipes electrically powered, e.g. refrigeration systems
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
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    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • H01ELECTRIC ELEMENTS
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    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/64Heat extraction or cooling elements
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Abstract

本发明公开了一种大功率LED灯降温器件及其制作方法,本发明预先将制作N型半导体元件或P型半导体元件的半导体晶棒制作为一头直径大、另一头直径小的圆锥体形晶棒,然后将该圆锥体形的半导体晶棒进行切片时在每片晶片作为尾端的大直径端面上作色标记号;然后对每片晶片的圆锥面进行切割制粒得多边形柱体形状的N型半导体元件或P型半导体元件,将该N型和P型半导体元件按矩阵排列的方式排列在两块设有导电电路的氧化铍陶瓷片之间,并使每一列的N型半导体元件的头端与P型半导体元件的尾端相互串联连接而制成大功率LED灯降温器件。本发明具有降温效果好、工作效率高、能耗低、能减小LED灯光衰、和能延长大功率LED灯使用寿命等优点。

Description

一种大功率LED灯降温器件及其制作方法
技术领域
 本发明涉及一种大功率LED灯降温器件及其制作方法,属于大功率LED灯散热降温技术领域。
背景技术
LED灯的发光效率不仅取决于LED灯泡质量,更重要的是还取决于LED灯工作时的温度,特别是大功率LED灯在工作时,其温度在55℃以上时,每升高一度,其发光效率将下降约2%左右,因此对LED灯、特别是大功率LED灯工作时的降温处理非常重要。在现有技术中往往采用风冷或采用半导体制冷器件的方式对大功率LED灯进行降温处理。利用P型半导体元件和N型半导体元件在通电时即可在其两端产生热端和冷端不同温度的特点,已被广泛地应用在制作半导体制冷或制热器件领域中。目前,在采用N型或P型半导体元件制作降温器件时,往往都不考虑N型或P型半导体元件的方向,即在连接N型或P型半导体元件时,不考虑N型或P型半导体元件的头尾端,而是将N型或P型半导体元件之间进行任意端的相互连接,这种不分头尾端的连接方式不仅降低了半导体元件的工作效率,而且还增加了降温器件的能耗,并且还使所制作的降温器件达不到应有的制冷温度。用这种传统方法制作得到的制冷降温器件,其热端与冷端两端的温差一般只能达到60度左右。因此,现有的采用P型半导体元件和N型半导体元件制作的制冷降温器件的使用效果还是不够理想,特别不适合于作为大功率LED灯降温器件使用。
发明内容
本发明的目的是:提供一种降温效果好、工作效率较高、能耗较低的大功率LED灯降温器件及其制作方法,以克服现有技术的不足。
本发明是这样实现的:本发明的一种大功率LED灯降温器件的制作方法为,该方法包括采用N型半导体元件和P型半导体元件作为大功率LED灯降温器件的制冷元件,在采用N型半导体元件和P型半导体元件作为大功率LED灯降温器件的制冷元件时,预先在制作N型半导体元件或P型半导体元件的时候,将制作N型半导体元件或P型半导体元件的半导体晶棒制作为一头直径大、另一头直径小的圆锥体形晶棒,然后将该圆锥体形的半导体晶棒进行切片制得厚度相同的晶片,将晶片的小直径端作为头端、大直径端作为尾端,并在每片晶片的尾端面上作色标记号;然后对每片晶片的圆锥面进行切割制粒,将每片晶片都切割制粒成相同的多边形柱体形状,该多边形柱体形状的半导体即为设有头端和尾端的N型半导体元件或P型半导体元件,然后将该N型半导体元件和P型半导体元件按矩阵排列的方式排列在两块设有导电电路的氧化铍陶瓷片之间,使每一列的N型半导体元件与P型半导体元件相互串联,并使每一列串联的N型半导体元件的头端与P型半导体元件的尾端相连接或N型半导体元件的尾端与P型半导体元件的头端相连接。
上述的多边形柱体为四边形柱体、正方形柱体、正六边形柱体、正八边形柱体、正十边形柱体或正十二边形柱体。
根据上述方法构建的一种大功率LED灯降温器件,包括按矩阵排列的方式排列在两块设有导电电路的上氧化铍陶瓷片与下氧化铍陶瓷片之间的N型半导体元件和P型半导体元件,在N型半导体元件和P型半导体元件的一个端面上都设有导电的作色标记,该设有作色标记的端面为N型半导体元件或P型半导体元件的尾端,N型半导体元件或P型半导体元件的没有作色标记的另一端为头端,每一列的N型半导体元件与P型半导体元件分别通过设置在上氧化铍陶瓷片上的作为导电电路的上导电片和设置在下氧化铍陶瓷片上的作为导电电路的下导电片相互串联,并且每一列的N型半导体元件的头端与P型半导体元件的尾端相连接或每一列N型半导体元件的尾端与P型半导体元件的头端相连接,在每一列串联有N型半导体元件和P型半导体元件的两最外端的上导电片或两最外端的下导电片上设有用于与直流电源连接的导线。
在上述上氧化铍陶瓷片的上表面上贴合有铍铜板压块,在铍铜板压块上设有用于散热的铝基座,在下氧化铍陶瓷片的底面上通过石墨烯导热脂层贴合有导热均温板,在导热均温板上设有用于安装LED灯泡的大功率LED灯电路,导热均温板的两端分别通过螺钉与铝基座连接为一体。
在上述的铝基座上设有用于安装散热器导热管的热管安装孔。
上述的导热均温板为设有用于安装LED灯泡的大功率LED灯电路的印刷电路板。
由于采用了上述技术方案,本发明在传统的制作N型半导体元件和P型半导体元件的基础上,在进行半导体晶棒切片时即对其进行色标处理,从而能方便地识别出N型半导体元件或P型半导体元件的头端或尾端,并且该头端或尾端的排列方向与在未切片时的晶棒上的排列方向相一致。这样,当在使用本发明的半导体元件时,就能够非常容易地辨别出尾端与头端,从而避免了现有技术中在将N型和P型半导体元件连接时,因无法区分头端与尾端,而造成的头尾相互混乱连接的现象。采用本发明的N型或P型半导体元件在制作制冷器件时,能够方便地进行头端与尾端的有序连接,这样即可有效地提高每个N型与P型半导体元件的工作效率,并有效地提高整个制冷降温器件的制冷效果。采用本发明制作的大功率LED灯降温器件,经测试其冷端与热端的温差达73~78度左右,将本发明的降温器件安装在200瓦的大功率LED灯上使用,能保证该大功率LED灯的电路板长期稳定在45℃以下的温度工作,从而有效地提高了大功率LED灯的工作效率,并延长了大功率LED灯的使用寿命。所以,本发明与现有技术相比,本发明不仅具有降温效果好、工作效率高、能耗低的优点,而且还具有能有效降低大功率LED灯光衰、延长大功率LED灯使用寿命的优点。
附图说明
图1为本发明的的结构示意图。
附图标记说明:1-铝基座,2-热管安装孔,3-铍铜板压块,4-上氧化铍陶瓷片,5-上导电片,6-N型半导体元件,7-P型半导体元件,8-下导电片,9-下氧化铍陶瓷片,10-石墨烯导热脂层,11-导热均温板,12-导线,13-螺钉。
具体实施方式
下面结合附图和实施例对本发明作进一步的详细说。
本发明的实施例:本发明的一种大功率LED灯降温器件的制作方法为,该方法包括采用N型半导体元件和P型半导体元件作为大功率LED灯降温器件的制冷元件,在采用N型半导体元件和P型半导体元件作为大功率LED灯降温器件的制冷元件时,预先在按传统的工艺制作N型半导体元件或P型半导体元件的时候,将制作N型半导体元件或P型半导体元件的半导体晶棒制作为一头直径大、另一头直径小的圆锥体形晶棒,然后将该圆锥体形的半导体晶棒进行切片制得厚度相同的晶片,将晶片的小直径端作为头端、大直径端作为尾端,并在每片晶片的尾端面上作色标记号,在作色标记号时,可采用导电材料制作的颜色(如采用铜、铝或银等导电材料制作成颜色)进行作色;然后对每片晶片的圆锥面进行切割制粒,将每片晶片都切割制粒成相同的多边形柱体形状,该多边形柱体形状可根据使用的需要进行确定,通常可制作成四边形柱体、正方形柱体、正六边形柱体、正八边形柱体、正十边形柱体或正十二边形柱体,这样制作得到的该多边形柱体形状的半导体即为设有头端和尾端的N型半导体元件或P型半导体元件;然后将该N型半导体元件和P型半导体元件按传统矩阵排列的方式排列在两块设有导电电路的氧化铍陶瓷片之间,使每一列的N型半导体元件与P型半导体元件相互串联,并使每一列串联的N型半导体元件的头端与P型半导体元件的尾端相连接或N型半导体元件的尾端与P型半导体元件的头端相连接。
根据上述方法构建的本发明的一种大功率LED灯降温器件的结构示意图如图1所示,该降温器件包括按矩阵排列的方式排列在两块设有导电电路的上氧化铍陶瓷片4与下氧化铍陶瓷片9之间的N型半导体元件6和P型半导体元件7,在N型半导体元件6和P型半导体元件7的一个端面上都设有导电的作色标记,该设有作色标记的端面为N型半导体元件6或P型半导体元件7的尾端,N型半导体元件6或P型半导体元件7的没有作色标记的另一端为头端,将每一列的N型半导体元件6与P型半导体元件7分别通过设置在上氧化铍陶瓷片4上的上导电片5和设置在下氧化铍陶瓷片9上的下导电片8相互串联,并且将每一列的N型半导体元件6的头端与P型半导体元件7的尾端相连接或每一列N型半导体元件6的尾端与P型半导体元件7的头端相连接,同时在每一列串联有N型半导体元件6和P型半导体元件7的两最外端的上导电片5或两最外端的下导电片8上连接上能与直流电源连接的导线12(如图1所示);制作时,在上氧化铍陶瓷片4的上表面上贴合一块铍铜板压块3,在铍铜板压块3上安装一个用于散热的铝基座1,同时在铝基座1上制作出用于安装散热器导热管的热管安装孔2;在下氧化铍陶瓷片9的底面上通过石墨烯导热脂层10贴合一个导热均温板11,在该导热均温板11上按传统的大功率LED灯电路制作上用于安装LED灯泡的大功率LED灯电路,该导热均温板11也可直接采用现有的设有用于安装LED灯泡的大功率LED灯电路的印刷电路板;最后将导热均温板11的两端分别通过螺钉13与铝基座1连接为一体即成。
使用本发明的大功率LED灯降温器件时,只需将该器件安装在大功率LED灯的灯罩内,并将LED灯泡安装在导热均温板11上,同时将散热器的导热管卡固在铝基座1的热管安装孔2中,并将导线12和导热均温板11上的电源线分别与直流电源连接后即可使用。

Claims (5)

1.一种大功率LED灯降温器件的制作方法,包括采用N型半导体元件和P型半导体元件作为大功率LED灯降温器件的制冷元件,其特征在于:在采用N型半导体元件和P型半导体元件作为大功率LED灯降温器件的制冷元件时,预先在制作N型半导体元件或P型半导体元件的时候,将制作N型半导体元件或P型半导体元件的半导体晶棒制作为一头直径大、另一头直径小的圆锥体形晶棒,然后将该圆锥体形的半导体晶棒进行切片制得厚度相同的晶片,将晶片的小直径端作为头端、大直径端作为尾端,并在每片晶片的尾端面上作色标记号;然后对每片晶片的圆锥面进行切割制粒,将每片晶片都切割制粒成相同的多边形柱体形状,该多边形柱体形状的半导体即为设有头端和尾端的N型半导体元件或P型半导体元件,然后将该N型半导体元件和P型半导体元件按矩阵排列的方式排列在两块设有导电电路的氧化铍陶瓷片之间,使每一列的N型半导体元件与P型半导体元件相互串联,并使每一列串联的N型半导体元件的头端与P型半导体元件的尾端相连接或N型半导体元件的尾端与P型半导体元件的头端相连接。
2.根据权利要求1所述大功率LED灯降温器件的制作方法,其特征在于:所述的多边形柱体为四边形柱体、正方形柱体、正六边形柱体、正八边形柱体、正十边形柱体或正十二边形柱体。
3.一种大功率LED灯降温器件,包括按矩阵排列的方式排列在两块设有导电电路的上氧化铍陶瓷片(4)与下氧化铍陶瓷片(9)之间的N型半导体元件(6)和P型半导体元件(7),其特征在于:在N型半导体元件(6)和P型半导体元件(7)的一个端面上都设有导电的作色标记,该设有作色标记的端面为N型半导体元件(6)或P型半导体元件(7)的尾端,N型半导体元件(6)或P型半导体元件(7)的没有作色标记的另一端为头端,每一列的N型半导体元件(6)与P型半导体元件(7)分别通过设置在上氧化铍陶瓷片(4)上的上导电片(5)和设置在下氧化铍陶瓷片(9)上的下导电片(8)相互串联,并且每一列的N型半导体元件(6)的头端与P型半导体元件(7)的尾端相连接或每一列N型半导体元件(6)的尾端与P型半导体元件(7)的头端相连接,在每一列串联有N型半导体元件(6)和P型半导体元件(7)的两最外端的上导电片(5)或两最外端的下导电片(8)上设有用于与直流电源连接的导线(12);在上氧化铍陶瓷片(4)的上表面上贴合有铍铜板压块(3),在铍铜板压块(3)上设有用于散热的铝基座(1),在下氧化铍陶瓷片(9)的底面上通过石墨烯导热脂层(10)贴合有导热均温板(11),在导热均温板(11)上设有用于安装LED灯泡的大功率LED灯电路,导热均温板(11)的两端分别通过螺钉(13)与铝基座(1)连接为一体。
4.根据权利要求3所述的大功率LED灯降温器件,其特征在于:在铝基座(1)上设有用于安装散热器导热管的热管安装孔(2)。
5.根据权利要求3所述的大功率LED灯降温器件,其特征在于:导热均温板(11)为设有用于安装LED灯泡的大功率LED灯电路的印刷电路板。
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