WO2014097643A1 - 電子部品パッケージおよびその製造方法 - Google Patents
電子部品パッケージおよびその製造方法 Download PDFInfo
- Publication number
- WO2014097643A1 WO2014097643A1 PCT/JP2013/007503 JP2013007503W WO2014097643A1 WO 2014097643 A1 WO2014097643 A1 WO 2014097643A1 JP 2013007503 W JP2013007503 W JP 2013007503W WO 2014097643 A1 WO2014097643 A1 WO 2014097643A1
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- WIPO (PCT)
- Prior art keywords
- electronic component
- plating layer
- layer
- metal foil
- metal
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 296
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- 229910052782 aluminium Inorganic materials 0.000 claims description 13
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
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- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
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- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
Definitions
- the present invention relates to an electronic component package and a manufacturing method thereof. More particularly, the present invention relates to a package product including an electronic component and a manufacturing method thereof.
- a mounting technology for electronic components such as ICs and inductors
- a mounting technology using a circuit board or a lead frame there is a mounting technology using a circuit board or a lead frame. That is, there are “packages using a circuit board”, “packages using a lead frame”, and the like as general electronic component package forms.
- a package using a circuit board has a form in which electronic components are mounted on a circuit board.
- types of such packages there are generally “wire bonding type (W / B type)” and “flip chip type (F / C type)”.
- the “lead frame type” has a form including a lead frame composed of leads, die pads, and the like.
- Various electronic components are bonded by soldering or the like in both lead frame type packages and packages using circuit boards.
- the conventional technology has a problem that heat dissipation characteristics and connection reliability in high-density mounting are not sufficient.
- the present invention has been made in view of such points, and an object of the present invention is to provide an electronic component package that realizes improvement in heat radiation characteristics and connection reliability in high-density mounting, and a method for manufacturing the same.
- a method of manufacturing an electronic component package includes: (I) a step of preparing a metal foil having a main surface A on which an electronic component is arranged and a main surface B opposite to the main surface A and provided with a through hole in the electronic component arrangement region of the main surface A; (Ii) A step of placing the electronic component on the metal foil, wherein the electronic component is placed in the electronic component placement region on the main surface A so that the opening of the through hole provided in the metal foil is covered with the electrode of the electronic component.
- the step of placing (Iii) forming a sealing resin layer on the main surface A side of the metal foil so as to cover the electronic component, and (iv) forming a metal plating layer on the main surface B side of the metal foil,
- the wet plating method is performed to form the metal plating layer, and the metal plating layer fills (or fills) the through holes of the metal foil.
- the layer and the metal foil are integrated.
- An electronic component package is Sealing resin layer, An electronic component embedded in a sealing resin layer, and a metal wiring layer formed on the sealing resin and bonded to an electrode of the electronic component;
- the metal wiring layer is composed of a metal plating layer directly bonded to the electrode of the electronic component and a metal foil integrated with the metal plating layer, and the metal plating layer includes a dry plating layer and a wet plating layer.
- the dry plating layer has a bent shape so that it is directly bonded to the electrode of the electronic component, while the wet plating layer is formed due to the bent shape. It is characterized in that it has a form that has a thickness on the metal foil so as to fill the “dent of the layer”, and the contact interface size between the dry plating layer and the electrode is smaller than the electrode surface of the electrode.
- the electronic component package of the present invention by directly forming a metal plating layer on the electronic component, it is possible to improve heat dissipation characteristics and connection reliability in high-density mounting.
- FIG. 1 is a process sectional view schematically showing a method of manufacturing an electronic component package according to the invention.
- FIG. 2 is a process cross-sectional view schematically showing the method for manufacturing an electronic component package of the present invention.
- FIG. 3 is an explanatory diagram of the arithmetic average roughness Ra.
- FIG. 4 is a process cross-sectional view schematically showing the method for manufacturing an electronic component package (first embodiment) of the present invention.
- FIG. 5 is a process cross-sectional view schematically showing the electronic component package manufacturing method (first embodiment) of the present invention.
- FIG. 6 is a process cross-sectional view schematically showing the electronic component package manufacturing method (second embodiment) of the present invention.
- FIG. 1 is a process sectional view schematically showing a method of manufacturing an electronic component package according to the invention.
- FIG. 2 is a process cross-sectional view schematically showing the method for manufacturing an electronic component package of the present invention.
- FIG. 3 is an explanatory diagram of the arithm
- FIG. 7 is a schematic diagram (third embodiment) schematically showing an aspect in obtaining a plurality of electronic component package precursors.
- FIG. 8 is a process cross-sectional view schematically showing the electronic component package manufacturing method (fourth embodiment) of the present invention.
- FIG. 9 is a cross-sectional view schematically showing the configuration of the electronic component package of the present invention.
- FIG. 10 is a schematic diagram for explaining “surface bonding (or direct bonding)” in the present invention.
- FIG. 11 is a cross-sectional view schematically showing the configuration of the electronic component package of the present invention according to the first embodiment.
- FIG. 12 is a cross-sectional view schematically showing the configuration of the electronic component package of the present invention according to the second embodiment.
- FIG. 13 is a cross-sectional view schematically showing the configuration of the electronic component package (light emitting device package) of the present invention according to the fourth embodiment.
- FIG. 14 is a cross-sectional view schematically showing the configuration of a conventional electronic component package.
- a package using a circuit board can realize high-density mounting, but has a problem in terms of heat dissipation because it uses a circuit board. Also, the substrate cost itself cannot be ignored, and the cost is not always satisfactory. Furthermore, the cost for wire bonding and flip chip mounting is not negligible in the first place, and further cost reduction is desired (for example, an expensive mounter is required for flip chip mounting).
- solder flash a so-called “solder flash” problem when the whole is sealed with a resin, and it is not necessarily satisfactory in terms of connection reliability. In other words, during heating in module mounting soldering, the solder material used for joining the components in the package may be re-melted, and may leak into a minute gap (flash) or cause a short circuit. .
- a main object of the present invention is to provide a packaging technique that can satisfy a preferable heat radiation characteristic and connection reliability, and can realize an inexpensive mounting cost.
- a method for manufacturing an electronic component package comprising: (I) a step of preparing a metal foil having a main surface A on which an electronic component is arranged and a main surface B opposite to the main surface A and provided with a through hole in the electronic component arrangement region of the main surface A; (Ii) A step of placing the electronic component on the metal foil, wherein the electronic component is placed in the electronic component placement region on the main surface A so that the opening of the through hole provided in the metal foil is covered with the electrode of the electronic component.
- the step of placing (Iii) forming a sealing resin layer on the main surface A side of the metal foil so as to cover the electronic component, and (iv) forming a metal plating layer on the main surface B side of the metal foil,
- the wet plating method is performed to form the metal plating layer, and the metal plating layer fills (or fills) the through holes of the metal foil.
- the layer and the metal foil are integrated.
- One of the features of the method for manufacturing an electronic component package according to one aspect of the present invention is to use a metal foil provided with through holes in the electronic component placement region, and fill the metal foil through holes with a metal plating layer. Then, the dry plating method and the wet plating method are sequentially performed so that the metal plating layer and the metal foil are integrated to form the metal plating layer.
- an electronic component package obtained by the above manufacturing method is also provided.
- Such an electronic component package is Sealing resin layer, An electronic component embedded in a sealing resin layer, and a metal wiring layer formed on the sealing resin and bonded to an electrode of the electronic component;
- the metal wiring layer is composed of a metal plating layer directly bonded to the electrode of the electronic component and a metal foil integrated with the metal plating layer, and the metal plating layer includes a dry plating layer and a wet plating layer.
- the dry plating layer has a bent shape so that it is directly bonded to the electrode of the electronic component, while the wet plating layer is formed due to the bent shape. It is characterized in that it has a form that has a thickness on the metal foil so as to fill the “dent of the layer”, and the contact interface size between the dry plating layer and the electrode is smaller than the electrode surface of the electrode.
- the metal wiring layer includes a “metal plating layer directly bonded to the electrode of the electronic component” and “a metal integrated with the metal plating layer”
- the metal plating layer has a form in which the dry plating layer is bent so as to be directly bonded to the electrode of the electronic component, while the wet plating layer is formed due to the bent form.
- the metal foil has a thick form on the metal foil and the contact interface size between the dry plating layer and the electrode is smaller than the electrode surface of the electrode.
- the metal wiring layer in one embodiment of the present invention includes a metal foil, the metal wiring layer can be easily provided thicker and can have particularly high heat dissipation characteristics.
- the metal foil and metal plating layer (dry plating layer and wet plating layer) constituting the metal wiring layer can be formed from a material such as copper having high thermal conductivity, and provided as a “thick metal wiring layer”. Therefore, heat can be efficiently released to the outside.
- packaging is achieved without performing “soldering”, that is, a package that does not use “solder material” is realized. Therefore, the disadvantage of “solder flash” is avoided, and “connection reliability” can be improved in that respect.
- the package according to one embodiment of the present invention has a “substrate-less structure”. Because it is “substrate-less”, no substrate is used, which contributes to low-cost manufacturing. Further, since packaging can be performed by a simple process compared to wire bonding or flip chip mounting, cost reduction can be achieved in this respect. Furthermore, by using the “thick metal foil”, it is possible to form the “thick metal wiring layer” in a short time, and in that respect, the cost can be reduced.
- FIG. 1 (a) first, as shown in FIG. 1 (a), “a main surface A on which electronic components are arranged and a main surface B opposite to the main surface A are provided. A metal foil 10 ”provided with a through hole 30 in the electronic component placement region 40 on the surface A is prepared.
- an electronic component placement area 40 is provided on the main surface A of the metal foil 10, and at least one through hole 30 is provided in the electronic component placement area 40.
- the “electronic component placement region” is a “surface region of the metal foil” in which the electronic component is placed in a later step (ii), that is, a “metal foil region” overlapping the electronic component.
- the material of the metal foil 10 is Cu (copper), Al (aluminum), Ag (silver), Pd (palladium), Pt (platinum), Ni (nickel), Ti (titanium), Fe (iron), Zn ( Comprising at least one metal material selected from the group consisting of zinc), Zr (zirconium), Nb (niobium), Mo (molybdenum), Sn (tin), Ta (tantalum) and Au (gold) It may be.
- Cu (copper) and Al (aluminum) are preferable from the viewpoint of ease of processing processes including “formation of through holes”.
- the thickness of the metal foil 10 is preferably 9 ⁇ m to 2000 ⁇ m, more preferably 18 ⁇ m to 1000 ⁇ m, and still more preferably 200 ⁇ m to 500 ⁇ m (for example, about 300 ⁇ m).
- the metal foil 10 preferably has a roughened surface. Specifically, the main surface A of the metal foil 10 (surface on which the electronic component placement region 40 is formed) is a roughened surface. Preferred (see the right side view of FIG. 1B).
- the sealing resin layer 60 is formed on the roughened surface of the metal foil 10 in the later “forming sealing resin layer” process (see the right side of FIG. 1C). Since the resin material of the sealing resin layer bites into the roughened surface, the adhesive force between the metal foil and the sealing resin layer is increased, and a highly reliable package can be realized.
- the “roughened surface” means that the main surface A of the metal foil is a rough surface (fine uneven surface).
- the arithmetic average roughness of the surface of the metal foil 10 It means that Rz is 5.0 ⁇ m or more, preferably 7.0 ⁇ m or more (the upper limit value is not particularly limited, but is, for example, 10.0 ⁇ m or less).
- Rz representing surface roughness” in this specification refers to the roughness “Rz” defined in JIS B0601. In other words, “Rz” in the present invention has only the reference length in the direction of the average line from the roughness curve as shown in FIG. 3 (in the present invention, “cross-sectional profile of the main surface A of the metal foil”).
- the sum of the absolute value of (Yv) and the average value is obtained, and this value is expressed in micrometers ( ⁇ m) (refer to JIS B0601: 1994).
- the through hole 30 can be provided by etching the metal foil 10 using photolithography. Or it can also provide by irradiating the metal foil 10 with a laser and drilling holes. Furthermore, the through hole 30 can be provided by mechanical processing such as punching (punching).
- the shape of the through hole 30 may be, for example, such that the planar shape viewed from above the metal foil is “circular”. However, the shape of the through hole 30 is not particularly limited to “circular”, and other shapes such as an ellipse, an oval, and a rectangle are possible.
- the hole size of the through hole 30 is preferably smaller than the electrode size of the electronic component. This is because the electronic component is arranged in a later process so that the opening of the through hole 30 of the metal foil 10 is covered with the electrode of the electronic component. That is, the size of the opening surface of the through hole 30 (that is, the area of the planar shape of the through hole when viewed from above the metal foil) is the electrode surface size of the electronic component (that is, the electrode when viewed in the same manner). Is preferably smaller than the area of the planar shape). For example, the opening surface size of the through hole 30 is preferably about 40% to 95%, more preferably about 60% to 90% of the electrode surface size of the electronic component.
- step (ii) is performed. That is, as shown in FIG. 1B, at least one type of electronic component 50 is arranged on the metal foil 10. Specifically, the electronic component is placed in the electronic component placement region so that the opening (in particular, the opening surface on the main surface A side) of the through hole 30 provided in the metal foil 10 is covered with the electrode 55 of the electronic component. 50 is arranged.
- step (ii) the electronic component 50 is arranged so that the opening surface of the through hole 30 and the electrode surface of the electronic component 50 overlap each other.
- the term “... so as to be in the form of being covered” means that the through hole 30 is not visible on the lower side of the metal foil (that is, when viewed from the main surface B side). This means that the electrode 55 blocks the opening surface of the through hole 30 (particularly the opening surface on the main surface A side).
- the electronic component 50 is a circuit component / circuit element used in the electronics mounting field, and is not particularly limited as long as it has an electrode larger than the opening surface of the through hole 30.
- IC for example, control IC
- MOS metal oxide semiconductor
- a capacitor for example, a power element, a light emitting element (for example, LED)
- a chip resistor, a chip capacitor, a chip varistor, a chip thermistor, other chip-shaped multilayer filters, connection terminals and the like can be mentioned.
- step (iii) is performed. That is, as shown in FIG. 1C, the sealing resin layer 60 is formed on the metal foil 10 on the main surface A side so as to cover the electronic component 50, and the electronic component package precursor 100 'is obtained.
- the encapsulating resin layer 60 can be provided by applying a resin raw material to the electronic component placement surface of the metal foil 10 by a spin coating method, a doctor blade method, or the like, followed by heat treatment, light irradiation, or the like (that is, applied).
- the sealing resin layer 60 can be provided by thermosetting or photocuring the resin raw material). Or you may provide the sealing resin layer 60 by bonding a resin film etc. with respect to the electronic component arrangement
- the sealing resin layer 60 can be provided by filling the mold with an uncured powdery or liquid sealing resin and heat curing.
- the material of the sealing resin layer 60 may be any kind of material as long as it provides insulation, and may be, for example, an epoxy resin or a silicone resin.
- the thickness of the sealing resin layer 60 is preferably about 0.5 mm to 5.0 mm, more preferably about 1.2 mm to 1.8 mm.
- step (iv) is performed. That is, as shown in FIGS. 1D and 1E, the metal plating layer 70 is formed on the main surface B side of the metal foil 10. Specifically, the metal plating layer 70 is formed so as to be joined to “the surface of the metal foil”, “the inner wall of the through hole”, and “the electrode exposed surface of the electronic component that covers at one end of the through hole”.
- the dry plating method is performed on the main surface B side of the metal foil 10 (see FIG. 1D), and then the wet plating method is performed (see FIG. 1E). ) And a metal plating layer 70 is formed.
- the through hole 30 of the metal foil 10 is filled with the metal plating layer 70, and the metal plating layer 70 and the metal foil 10 are integrated with each other.
- the dry plating layer 70 ′ that is directly bonded to the electrode of the electronic component is formed through the through hole, and then the dry plating method is carried out by carrying out the wet plating method.
- a wet plating layer 70 ′′ that is directly bonded to the plating layer is formed, whereby the metal plating layer 70 and the metal foil 10 are integrated (see FIGS. 1D and 1E).
- the dry plating layer 70 ′ it is preferable to form a layer having a bent shape along the contour shape of the through hole 30 as the dry plating layer 70 ′.
- the wet plating layer 70 ′′ it is preferable to form a layer having a thickness on the metal foil 10 so as to fill all the through holes 30. That is, the wet plating method is performed.
- the manufacturing method of the present invention has process characteristics such as “a metal layer is directly formed on the exposed surface of the metal foil and the electrode of the electronic component”.
- process characteristics such as “a metal layer is directly formed on the exposed surface of the metal foil and the electrode of the electronic component”.
- the metal plating layer since a “thick metal foil” is used, the metal plating layer only needs to be thick enough to fill and fill the through hole, and a thick metal layer can be provided in a short time. Therefore, the metal plating layer bonded to the electrode of the electronic component and the metal foil bonded to and integrated with the metal plating layer can be suitably used as the “heat dissipation member” or the like.
- the dry plating method is performed, the inside of the through hole can be filled without voids and formed with good adhesion by the subsequent wet plating method.
- the dry plating method includes a vacuum plating method (PVD method) and a chemical vapor deposition method (CVD method), and the vacuum plating method (PVD method) further includes sputtering, vacuum deposition, ion plating, and the like.
- the wet plating method includes an electroplating method (for example, electrolytic plating), a chemical plating method, a hot dipping method, and the like.
- electroplating method for example, electrolytic plating
- sputtering may be performed as a dry plating method
- an electroplating method for example, electrolytic plating
- the plating layer 70 is formed along the “surface of the metal foil 10”, “the inner wall of the through hole 30”, and “the electrode exposed surface 55 of the electronic component”, and gradually increases in thickness. However, it is sufficient that the thickness is at least enough to fill and fill the inside of the through hole 30. Therefore, the thickness of the metal plating layer 70 outside the through hole 30 is preferably thinner than the thickness of the metal foil 10.
- the metal plating layer bonded to the electrode of the electronic component, and the metal foil bonded and integrated with the metal plating layer can be thick and provided in a short time.
- dry plating is performed to form a dry plating layer 70 ′ having a thickness of 100 nm to 1000 nm, while wet plating is performed to a thickness of 1 ⁇ m to 10 ⁇ m (thickness in a region other than the through hole installation region). (See FIG. 1 (e))). That is, the dry plating layer 70 'is very thin, whereas the wet plating layer 70 "is thick. Since the wet plating layer 70 ′′ is so thick, the inside of the through hole 30 can be filled without voids.
- the dry plating layer 70 ′ formed by the dry plating method includes, for example, at least one metal material selected from the group consisting of Ti (titanium), Cr (chromium), Ni (nickel), and Cu (copper). It is preferable to consist of.
- the wet plating layer 70 "formed by the wet plating method preferably includes at least one metal material selected from the group consisting of Cu (copper), Ni (nickel), and Al (aluminum).
- the metal foil 10, the dry plating layer 70 'and the wet plating layer 70 preferably comprise the same kind of metal material. This is because a package with excellent connection reliability can be obtained.
- the metal foil 10, the dry plating layer 70 ′, and the wet plating layer 70 ′′ may all include at least a copper component (for example, the metal foil 10 is a copper foil, and dry plating is performed).
- the layer 70 ′ includes the following Cu thin film layer, and the wet plating layer 70 ′′ may be a copper layer).
- the dry plating layer 70 ′ is not limited to being formed as a single layer, and may be formed as a plurality of layers.
- a Ti thin film layer and a Cu thin film layer may be formed by sputtering (more specifically, the Cu thin film layer may be formed after the Ti thin film layer is formed).
- the metal foil 10 and the metal plating layer 70 formed by a dry plating method and a wet plating method integrated with the metal foil 10 are preferably subjected to a patterning process.
- a patterning process it is preferable to form the metal wiring layer 80 by patterning the metal foil and the metal plating layer.
- desired wiring formation for example, formation of a desired wiring pattern including an extraction electrode
- the patterning process itself is not particularly limited as long as it is a process used in the electronics packaging field.
- a desired patterning process may be performed by using photolithography that performs resist formation, exposure, development, etching, and the like.
- the metal wiring layer may include a metal wiring layer that is not in contact with the electrode of the electronic component in addition to the metal wiring layer joined to the electrode of the electronic component. This is because heat can be directly radiated from other than the sealing resin surface and the electrode exposed surface of the electronic component.
- solder resist layer 90 is formed on the surface of the sealing resin layer so as to partially cover the metal wiring layer 80.
- the solder resist layer 90 may be formed in the same manner as the solder resist formation generally used in the electronics mounting field.
- the manufacturing method of the present invention can be carried out in various process modes. This will be described below.
- Such an embodiment is characterized in that “metal foil provided with electronic component positioning means” is prepared in step (i). Specifically, as shown in FIGS. 4A and 4B, as a positioning means provided on the metal foil 10, “a bank-like support member 20 provided on the metal foil so as to surround the electronic component placement region” is used. Use.
- the bank-like support member 20 supports an electronic component as can be seen from the embodiments shown in FIGS. 4A to 4G, and can therefore be referred to as an “electronic component support”.
- the bank-like support member 20 is not particularly limited as long as the bank-like support member 20 is provided so as to protrude so as to surround the electronic component placement region 40 and is used for positioning the electronic component in the “electronic component placement step”.
- the material of the bank-like support member 20 may be resin and / or metal.
- the resin of the bank-like support member 20 include an epoxy resin, a silicone resin, a polyimide resin, a phenol resin, and an acrylic resin.
- the bank-like support member 20 can be provided by printing a resin raw material in a pattern shape. Alternatively, it may be provided by using a photo-sensitive resin raw material and using photolithography for performing exposure and development used in the electronics packaging field. Moreover, as a metal material of the electronic component support body 20, Cu (copper), Al (aluminum), or those alloys can be mentioned, for example. In this case, the bank-like support member 20 can be provided by performing metal plating in a pattern shape. Alternatively, the main surface A of the metal foil 10 may be entirely plated with metal, and then etched into a pattern shape using photolithography.
- the bank-like support member 20 preferably does not have adhesiveness to the electronic component.
- the height of the bank-like support member 20 may be high enough to substantially position the electronic component and prevent misalignment in the “electronic component placement step”.
- the height is preferably lower than the height of the component (for example, the height of the bank-like support member 20 may be about 50 to 500 ⁇ m).
- the bank-like support member 20 may be provided before the through hole 30 is formed, or may be provided after the through hole 30 is formed.
- the electronic component 50 is arranged on the electronic component arrangement region 40 surrounded by the bank-like support member 20. That is, the electronic component 50 is disposed so as to fit into the bank-like support member 20 on the metal foil. In other words, it can be said that the electronic component 50 is arranged so as to be within a space region surrounded by the bank-like support member 20. Thereby, the electronic component 50 can be arrange
- the process after the electronic component 50 is arranged is the same as the above-described embodiment, and the desired electronic component package is obtained by forming the sealing resin layer 60 and the metal plating layer 70 (70 ′, 70 ′′).
- the bank-like support member 20 also has a function of holding and fixing the arranged electronic component 50. Therefore, in the first embodiment, it is possible to more stably perform the process processing after the electronic components are arranged.
- This embodiment is characterized in that “metal foil provided with electronic component positioning means (positioning means different from the first embodiment)” is prepared in step (i). Specifically, as shown in FIGS. 6A and 6B, “the recessed portion 25 provided in the electronic component placement region by machining the metal foil” is used as positioning means provided in the metal foil 10.
- the electronic component 50 can be more accurately arranged in the electronic component arrangement region of the metal foil without separately providing the bank-like support member 20 on the metal foil. That is, by using the recessed portion 25, the electronic component can be arranged so that the through hole 30 of the metal foil 10 is reliably covered with the electrode 55 of the electronic component.
- the metal foil 10 is counterbored to form the recessed portion 25, and the recessed portion 25 is used as the electronic component placement region 40 (FIG. 6A).
- the electronic component 50 is arranged on the electronic component arrangement region 40 formed by the recessed portion 25.
- the electronic component 50 is disposed so as to be at least partially fitted into the recess 25 of the metal foil.
- the electronic component 50 is arranged so as to fit in the space region formed by the recessed portion 25.
- the recessed portion 25 also has a function of holding and fixing the placed electronic component 50, so that the process processing after placing the electronic component is more stable. Can be implemented automatically.
- the depth dimension L 1 of the recess 25 is not particularly limited, but may preferably be about 5% to 50%, more preferably about 10% to 30% of the thickness L 2 of the metal foil 10 ( (See FIG. 6 (a)). With such a depth dimension, the electronic component 50 can be particularly preferably held and fixed by the recessed portion 25.
- the process after the electronic component 50 is arranged is the same as that described above.
- the desired electronic component package 100 is obtained through the formation of the sealing resin layer 60 and the formation of the metal plating layer 70 (70 ', 70 ").
- the third embodiment is an embodiment suitable for “collective manufacturing of a plurality of electronic component packages”. That is, according to this embodiment, a plurality of electronic component packages can be manufactured in a lump.
- a metal foil provided with a plurality of package precursor regions is used.
- a plurality of positioning means such as “a bank-like support member 20 provided on a metal foil so as to surround the electronic component placement region” or “a recessed portion 25 provided in the electronic component placement region by counterboring the metal foil”.
- Use metal foil Use metal foil.
- the electronic components used in the plurality of electronic component packages are respectively arranged so as to be positioned in each of the plurality of package precursor regions (see FIG. 7).
- an “electronic component package precursor in which a plurality of precursors are integrated” can be collectively obtained. Therefore, finally, when a dicing process is performed (see FIG. 7), a plurality of electronic component packages are obtained. That is, after the step (iv), a plurality of electronic component packages can be obtained by performing a dicing process so that the “plurality of package precursor regions” are separated separately.
- the fourth embodiment is an embodiment suitable for “manufacturing a light emitting device package”.
- the present invention is suitable for a light emitting device package even when a light emitting device is included in an electronic component (that is, when a light emitting device is included as an electronic component to be arranged in the electronic component arrangement region in step (ii)).
- the product can be manufactured.
- the phosphor layer and the transparent resin layer are formed as the sealing resin layer.
- the phosphor layer 44 is disposed on the light emitting element 50 disposed on the metal foil 10, and then a transparent resin layer 46 is formed so as to cover the light emitting element and the phosphor layer (FIG. 8A). To (c)).
- the formation of the phosphor layer and the formation of the transparent resin layer itself may be the same as a method generally used in conventional LED package manufacturing.
- a process similar to that in the first embodiment or the second embodiment is performed (see FIGS. 8D to 8H).
- the electronic component package 100 having a desired light emitting device package form can be finally obtained.
- An electronic component package according to one embodiment of the present invention is a package obtained by the above manufacturing method.
- FIG. 9 schematically shows a configuration of an electronic component package 100 according to one embodiment of the present invention.
- the electronic component package 100 includes a sealing resin layer 60, an electronic component 50, and a metal wiring layer 80 bonded to an electrode 55 of the electronic component.
- the electronic component 50 is embedded in the sealing resin layer 60.
- the electronic component 50 is embedded in the sealing resin layer 60 so as to be flush with the sealing resin layer 60. That is, the “surface of the electronic component 50” and the “surface of the sealing resin layer 60” are substantially on the same plane. More preferably, the electrode part 55 of the electronic component is flush with the sealing resin layer 60 (that is, the surface of the electrode 55 of the electronic component and the surface of the sealing resin layer 60 are substantially on the same plane. Preferably).
- the metal wiring layer 80 includes a metal plating layer 70 bonded to the electrode of the electronic component and a metal foil 10 bonded to the metal plating layer.
- the metal plating layer 70 has a two-layer structure including a “relatively positioned wet plating layer (70 ′′)” and a “relatively positioned dry plating layer (70 ′)”. is doing. Specifically, a dry plating layer 70 ′ is provided so as to be directly bonded to the electrode 55 and the metal foil 10 of the electronic component, and a wet plating layer 70 ′′ is provided on the dry plating layer 70 ′.
- the expression “relatively positioned outside” in the present invention substantially means that it is located more distal to the “electrode exposed surface of the electronic component”.
- the expression “positioned relatively inside” substantially means that it is located more proximal to the “electrode exposed surface of the electronic component”.
- the metal foil 10 included in the metal wiring layer 80 is Cu (copper), Al (aluminum), Ag (silver), Pd (palladium), Pt (platinum), Ni (nickel), Ti (titanium), Fe (iron), Zn (zinc), Zr (zirconium), Nb (niobium), Mo (molybdenum), It comprises at least one metal material selected from the group consisting of Sn (tin), Ta (tantalum), and Au (gold).
- Cu (copper) and Al (aluminum) are preferable.
- the thickness of the metal foil 10 is preferably 9 ⁇ m to 2000 ⁇ m, more preferably 18 ⁇ m to 1000 ⁇ m (for example, about 300 ⁇ m).
- the metal foil 10 is covered with the sealing resin layer 60 so that the roughened surface is joined to the sealing resin layer 60 as shown in FIG. It is preferable.
- the “roughened surface” substantially means that the arithmetic average roughness Rz of the surface of the metal foil is 5.0 ⁇ m or more, preferably 7.0 ⁇ m or more.
- one or more types of electronic components 50 are embedded in the sealing resin layer 60.
- electronic components include an IC (for example, a control IC), an inductor, a semiconductor element (for example, a MOS (metal oxide semiconductor)), a capacitor, a power element, a light emitting element (for example, an LED) chip resistor, a chip capacitor, Examples include chip varistors, chip thermistors, other chip-shaped multilayer filters, and connection terminals.
- the electrode part 55 of the electronic component is preferably flush with the sealing resin layer 60, and the metal plating layer 70 is provided so as to be joined to the electrode part 55.
- the sealing resin layer 60 in which the electronic component is embedded includes, for example, an epoxy resin or a silicone resin.
- the thickness of the sealing resin layer is preferably about 0.5 mm to 5.0 mm, more preferably about 1.2 mm to 1.8 mm.
- a relatively thick metal foil 10 is preferably used.
- the thickness of the metal plating layer 70 is preferably thinner than the thickness of the metal foil 10.
- the thick metal wiring layer 80 is suitably implement
- an “electronic component electrode” and a “metal foil” are electrically connected to each other via a “metal plating layer”, thereby realizing a suitable wiring form of the metal wiring layer.
- an electronic component when an electronic component generates heat, an effect that the heat can be suitably radiated through a metal plating layer or a metal foil can be achieved.
- the dry plating layer 70 ′ constituting the metal plating layer 70 is very thin (preferably may have a nano-order thickness), whereas the wet plating layer 70 ′′ is thick (preferably micron). Most of the metal plating layer 70 is occupied by the wet plating layer 70 ".
- the dry plating layer 70 ′ preferably has a thickness of 100 nm to 1000 nm (eg, about 300 nm of Ti and about 600 nm of Cu), while the wet plating layer 70 ′′ is preferably about 1 to 10 ⁇ m. Yes.
- the dry plating layer 70 ′ may have a bent shape so as to be directly bonded to the electrode 55 of the electronic component (see the lower side view of FIG. 9).
- the wet plating layer 70 ′′ fills the “recessed portion of the dry plating layer 70 ′” formed due to such a bent shape, and has a thickness (more specifically, provided on the metal foil).
- the thickness of the dry plating layer 70 ′ may be as follows.
- the dry plating layer 70 ′ is formed by a dry plating method, and therefore, at least one selected from the group consisting of Ti (titanium), Cr (chromium), Ni (nickel), and Cu (copper). It is preferable to comprise the metal material.
- the dry plating layer 50 ' may be made of other metal materials such as Ag (silver), Al (aluminum), Al alloy, Au (gold), Pt (platinum), Sn (tin) and W (tungsten). ) Etc., and may comprise at least one selected from the group consisting of. Since the dry plating layer can also function as a stress relaxation layer, it can be said that the package of the present invention is excellent in connection reliability.
- the wet plating layer 70 is formed by a wet plating method, and therefore includes at least one metal material selected from the group consisting of Cu (copper) and Al (aluminum). Further, the material of the wet plating layer 70 ′′ is at least one selected from the group consisting of other metal materials such as silver (Ag), palladium (Pd), platinum (Pt) and nickel (Ni). May be included. However, in the case where “heat dissipation characteristics” are particularly important, the material of the wet plating layer 70 is preferably a material having high thermal conductivity and effectively contributing to the heat dissipation characteristics, and therefore Cu (copper) is particularly preferable.
- the metal foil 10, the dry plating layer 70 ′ and the wet plating layer 70 ′′ contain the same kind of metal material.
- the dry plating layer 70 ′ is not limited to being formed as a single layer, and may be a plurality of layers.
- the dry plating layer 70 ′ may have a two-layer structure including a dry plating layer made of Ti and a dry plating layer made of Cu thereon.
- the metal wiring layer 80 and the electrode 55 of the electronic component are directly “surface bonded” (or “direct bonded”) to each other by the metal plating layer 70.
- the metal wiring layer 80 and the electronic component 50 are electrically interconnected.
- “Surface bonding (or direct bonding)” as used herein refers to a mode in which the main surfaces of each element (upper surface / lower surface) contact each other, in particular, the main surfaces of each element (upper surface / lower surface). Are substantially in contact with each other in a range where they overlap each other (especially, all contact within the range of the through holes of the metal foil).
- the main surface of the electrode of the electronic component (the lower main surface exposed from the through hole of the metal foil)” and “the main surface of the metal plating layer positioned inside the through hole of the metal foil (the upper main surface).
- Surface means an aspect in which they all come in contact with each other.
- “surface bonding (or direct bonding)” used in this specification means a metal plating layer (particularly, the dry plating layer) positioned inside the through hole of the metal foil and the main part of the electrode part of the electronic component. This means a mode in which the surface regions are in full contact (that is, a mode in which “lower main surface region A” and “upper main surface region B” in FIG. 10 are all in contact).
- the metal plating layer 70 in which the heat of the electronic component 50 is surface bonded (or directly bonded) to the electrode 55 and bonded thereto is surface bonded (or directly bonded) to the electrode 55 and bonded thereto.
- the metal plating layer 70 and the thick metal foil 10 also function as a heat sink and can particularly effectively contribute to heat dissipation measures for the package.
- the form that is the surface bonding (or direct bonding) between the electrode 55 of the electronic component and the metal wiring layer 80 has no inclusion that obstructs heat conduction as compared with the case of mounting using wire bonding or bump, and is markedly different. It is in a form that efficiently dissipates heat.
- the package of the present invention can have excellent heat dissipation characteristics, it can bring about an effect of increasing the characteristics and operation life of the electronic parts. Denaturation and discoloration "can be effectively prevented.
- surface bonding (or direct bonding) the electric resistance is excellent as compared with the case of electrical connection via wires or bumps. Therefore, in the package of the present invention, an effect of allowing a larger current to flow can be obtained.
- a light-emitting element package such as an LED package
- a light-emitting element package with higher luminance can be realized by the present invention due to high heat dissipation characteristics, a large current, and the like.
- the contact interface size between the dry plating layer 70 ′ and the electrode 55 is smaller than the electrode surface of the electrode 55.
- the “contact interface size between the dry plating layer 70 ′ and the electrode 55” is preferably about 40% to 95%, more preferably about 60% to 90% of the electrode surface size of the electronic component. .
- a resist layer may be provided so as to be a more preferable aspect as a packaged product. That is, a resist layer may be provided for the metal wiring layer. More specifically, it is preferable that a solder resist layer 90 is provided so as to at least partially cover the metal wiring layer 80 as shown in FIG.
- the solder resist layer 90 may be the same as the solder resist generally used in the electronics mounting field.
- the bank-like support member 20 is embedded in the sealing resin layer 60 as shown in FIG. Yes.
- the bank-like support member 20 is preferably embedded in the sealing resin layer 60 so as to be flush with the sealing resin layer 60. That is, preferably, “the surface of the bank-like support member 20” and “the surface of the sealing resin layer 60” are substantially on the same plane.
- the electronic component 50 is also “same”
- the “surface of the bank-like support member 20” and the “surface of the sealing resin layer 60” are substantially in the preferred embodiment of the electronic component package 100.
- the “surface of the electronic component 50” and the “surface of the sealing resin layer 60” are substantially on the same plane.
- the height of the bank-like support member 20 may be about 50 to 500 ⁇ m.
- the electronic component 50 is embedded at a position closer to the upper surface of the sealing resin layer 60 due to the positioning means, that is, the bank-like support member 20. Therefore, the heat from the electronic component 50 is easily radiated through the upper surface of the sealing resin layer. That is, in this aspect, desirable high heat dissipation characteristics can be suitably realized not only from the viewpoint of the thicker metal wiring layer 80 but also from the viewpoint of the arrangement level of the electronic component 50 in the sealing resin layer 60.
- the bank-like support member 20 when the bank-like support member 20 is made of a material having high thermal conductivity such as a metal material, the bank-like support member 20 can function as a heat sink like the metal wiring layer 80, and the package It can contribute effectively to further heat dissipation measures.
- the bank-like support member 20 when the bank-like support member 20 is made of a resin material, the bank-like support member 20 can be used as a stress relaxation member, and an effect of reducing stress that may occur in an electronic component package product can be achieved.
- the “depression 25” is used as the positioning means in the method of manufacturing the electronic component package product
- at least a part of the boundary surface between the sealing resin layer 60 and the metal wiring layer 80 is used as shown in FIG.
- a concave surface is formed on the surface.
- the electronic component 50 is preferably provided so as to fit in the concave surface 25.
- the electronic component is generally close to the metal wiring layer 80 (preferably, the portion other than the electrode of the electronic component may be in direct contact with the metal wiring layer 80). Therefore, the heat from the electronic component can be radiated more suitably through the metal wiring layer 80.
- the recess dimension L 1 of the concave surface 25 is not particularly limited, but is preferably about 5% to 50%, more preferably 10% to 30% of the thickness L 2 of the metal foil portion 10 of the metal wiring layer 80. It may be about (see FIG. 12). With such a depth dimension, the electronic component 50 can be particularly preferably held and fixed by the recessed portion 25.
- the electronic component package of the present invention can be configured as a light emitting device package. That is, in the case where a light emitting element is included as an electronic component, the light emitting element package as shown in FIG. 13 can be obtained.
- a phosphor layer and a transparent resin layer are provided.
- the sealing resin layer in which the electronic component and the electronic component support are embedded as shown in FIG. 13, “the phosphor layer 44 formed on the light emitting element 50” and “ It is preferable that a transparent resin layer 46 ”formed so as to cover the light emitting element 50 and the phosphor layer 44 is provided.
- a light emitting device package product can be realized as the electronic component package 100 of the present invention.
- the materials and thicknesses of the “phosphor layer” and “transparent resin layer” may be those conventionally used in general LED packages.
- the “light emitting element” is an element that emits light, and substantially means, for example, a light emitting diode (LED) and an electronic component including them. Accordingly, the “light emitting element” in the present invention is used to represent an aspect including not only “LED bare chip (ie, LED chip)” but also “discrete type in which the LED chip is molded”. Note that not only the LED chip but also a semiconductor laser chip can be used.
- the dry plating layer 70 ′ and / or the bank-like support member 20 can be suitably used as the “reflection layer”.
- the “reflective layer” is positioned immediately below or in the immediate vicinity of the light emitting element, the downward light emitted from the light emitting element can be efficiently reflected by the reflective layer (electronic component support). That is, “light emitted downward” can be directed upward.
- the dry plating layer 70 'and / or the bank-like support member 20 includes a metal selected from the group consisting of Ag (silver) and Al (aluminum). It is preferable.
- the electronic component package provided with the bank-like support member 20 is excellent in terms of light extraction from the upper surface of the sealing resin layer.
- the light emitting element 50 is embedded in a resin layer (particularly, the transparent resin layer 46 described above) at a position closer to the upper surface thereof. . Therefore, in the light emitting device package of the present invention, the light extraction efficiency from the upper surface (light extraction surface) of the resin layer can be improved (see FIG. 13).
- First aspect A method for manufacturing an electronic component package, comprising: (I) a step of preparing a metal foil having a main surface A on which an electronic component is arranged and a main surface B opposite to the main surface A and provided with a through hole in the electronic component arrangement region of the main surface A; (Ii) a step of placing the electronic component on the metal foil, the step of placing the electronic component in the electronic component placement region so that the opening of the through hole is covered with an electrode of the electronic component; (Iii) forming a sealing resin layer on the main surface A side of the metal foil so as to cover the electronic component, and (iv) forming a metal plating layer on the main surface B side of the metal foil, In step (iv), after performing the dry plating method, the wet plating method is performed to form the metal plating layer, and the metal plating layer fills the through hole of the metal foil, and the metal plating layer, the metal foil, A method for manufacturing an electronic component
- An electronic device characterized by using a bank-like support member provided on a metal foil so as to surround the electronic component placement region or a recessed portion provided in the electronic component placement region by counterboring the metal foil as the positioning means.
- Third aspect The method for manufacturing an electronic component package according to the first aspect or the second aspect, wherein the electrode of the electronic component has an electrode surface larger than the opening of the through hole of the metal foil.
- Fourth aspect In any one of the first to third aspects, the dry plating method is used to form a dry plating layer that is directly bonded to the electrode of the electronic component through the through hole.
- a method of manufacturing an electronic component package wherein a wet plating layer that directly joins a dry plating layer is formed by performing a plating method.
- 5th aspect The manufacturing method of the electronic component package characterized by forming in the said 4th aspect the layer which has a bending form along the outline shape of a through-hole as a dry-type plating layer.
- Sixth aspect The method of manufacturing an electronic component package according to the fourth aspect or fifth aspect, wherein the wet plating layer is a layer having a thickness on the metal foil that fills all the through holes.
- a dry plating method is performed to form a dry plating layer having a thickness of 100 nm to 1000 nm, while a wet plating method is performed to obtain a thickness of 1 ⁇ m to 10 ⁇ m.
- a method of manufacturing an electronic component package comprising forming a wet plating layer (thickness in a region other than a through-hole installation region).
- Eighth aspect The method of manufacturing an electronic component package according to any one of the first to seventh aspects, wherein sputtering is performed as a dry plating method and electroplating is performed as a wet plating method.
- Ninth aspect Manufacturing an electronic component package according to any one of the first to eighth aspects, wherein the metal wiring layer is formed by subjecting the integrated metal foil and the metal plating layer to a patterning process.
- Method. Tenth aspect: In any one of the first to ninth aspects, Including a light emitting element as an electronic component to be arranged in step (ii); In the step (iii), instead of forming the sealing resin layer, a phosphor layer is disposed on the light emitting element, and a transparent resin layer is formed so as to cover the light emitting element and the phosphor layer. Manufacturing method.
- an electronic component package Sealing resin layer, Electronic components embedded in the sealing resin layer, It has a metal wiring layer formed on a sealing resin and bonded to an electrode of an electronic component,
- the metal wiring layer is composed of a metal plating layer directly joined to the electrode of the electronic component and a metal foil integrated with the metal plating layer, and the metal plating layer includes a dry plating layer and a wet plating layer.
- the dry plating layer formed due to the bent form of the wet plating layer while the dry plating layer has a bent shape so as to be directly bonded to the electrode of the electronic component.
- An electronic component package characterized by having a form that fills a recess and has a thickness on a metal foil, and that a contact interface size between a dry plating layer and an electrode is smaller than an electrode surface of the electrode.
- Twelfth aspect In the eleventh aspect, a bank-like support member provided on the metal foil so as to surround the electronic component, or a recessed portion of the metal foil provided so that the electronic component is at least partially accommodated.
- An electronic component package characterized by further comprising: Thirteenth aspect : The electronic component according to the eleventh aspect or the twelfth aspect, wherein the thickness of the metal plating layer (thickness in a region other than the hollow portion of the dry plating layer) is thinner than the thickness of the metal foil. package.
- the electronic component package according to any one of the eleventh to thirteenth aspects, wherein the metal foil has a thickness of 18 ⁇ m to 1000 ⁇ m.
- the dry plating layer has a thickness of 100 nm to 1000 nm, while the wet plating layer has a thickness of 1 ⁇ m to 10 ⁇ m (other than the depression of the dry plating layer) A thickness of the region).
- the metal foil comprises at least one metal material selected from the group consisting of Cu and Al;
- the dry plating layer comprises at least one metal material selected from the group consisting of Ti, Cr, Ni and Cu, and the wet plating layer is at least one type selected from the group consisting of Cu, Ni and Al
- An electronic component package comprising a metal material.
- Seventeenth aspect The electronic component package according to the sixteenth aspect, wherein the metal foil, the dry plating layer, and the wet plating layer comprise the same kind of metal material.
- Eighteenth aspect The electronic component package according to any one of the eleventh to seventeenth aspects, further comprising a resist layer provided on the metal wiring layer.
- a light emitting element is provided as an electronic component, and a phosphor layer is provided on the light emitting element instead of the sealing resin layer.
- an electronic component package comprising a transparent resin layer covering the phosphor layer.
- An electronic component package was produced according to the present invention.
- the main members used for package manufacture are as follows. The following process was performed to produce an electronic component package.
- a “board-less”, “wire bondingless bumpless”, and “solder-free” package could be obtained.
- a bumpless metal plating layer can be formed integrally with a thick metal foil on the “electrode exposed surface of an electronic component”, and the metal plating layer and the thick metal foil can be suitably used as a heat sink. It could be confirmed.
- the present invention can be suitably used for various applications in the electronics mounting field.
- the present invention can be suitably applied to a power supply package (POL converter, for example, a step-down DC-DC converter), an LED package, a component built-in module, and the like.
- POL converter for example, a step-down DC-DC converter
- LED package for example, a LED package
- component built-in module for example, a component built-in module, and the like.
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Abstract
Description
(i)電子部品が配置される主面Aおよびそれに対向する主面Bを有し、主面Aの電子部品配置領域にて貫通穴が設けられた金属箔を用意する工程、
(ii)電子部品を金属箔に配置する工程であって、金属箔に設けられた貫通穴の開口部が電子部品の電極で蓋されるように電子部品を主面Aにおける電子部品配置領域に配置する工程、
(iii)電子部品を覆うように金属箔の主面A側に封止樹脂層を形成する工程、ならびに
(iv)金属箔の主面B側に金属めっき層を形成する工程
を含んで成り、
工程(iv)では、乾式めっき法を実施した後で湿式めっき法を実施して金属めっき層を形成しており、金属めっき層によって金属箔の貫通穴が充填され(又は埋められ)、金属めっき層と金属箔とが一体化されることを特徴とする。
封止樹脂層、
封止樹脂層に埋設された電子部品、および
封止樹脂上に形成され、かつ、電子部品の電極に接合されている金属配線層
を有して成り、
金属配線層が、電子部品の電極に対して直接的に接合した金属めっき層およびその金属めっき層と一体化した金属箔から構成されており、また
金属めっき層が、乾式めっき層と湿式めっき層とから成る2層構造を有し、乾式めっき層が電子部品の電極に直接的に接合するように屈曲した形態を有する一方、湿式めっき層が屈曲した形態に起因して形成された“乾式めっき層の窪み部”を満たして金属箔上に厚みを有する形態を有し、また
乾式めっき層と電極との接触界面サイズが電極の電極面よりも小さいことを特徴とする。
本発明者は、「背景技術」の欄において記載した従来のパッケージ技術に関し、以下の問題が生じることを見出した。
(i)電子部品が配置される主面Aおよびそれに対向する主面Bを有し、主面Aの電子部品配置領域にて貫通穴が設けられた金属箔を用意する工程、
(ii)電子部品を金属箔に配置する工程であって、金属箔に設けられた貫通穴の開口部が電子部品の電極で蓋されるように電子部品を主面Aにおける電子部品配置領域に配置する工程、
(iii)電子部品を覆うように金属箔の主面A側に封止樹脂層を形成する工程、ならびに
(iv)金属箔の主面B側に金属めっき層を形成する工程
を含んで成り、
工程(iv)では、乾式めっき法を実施した後で湿式めっき法を実施して金属めっき層を形成しており、金属めっき層によって金属箔の貫通穴が充填され(又は埋められ)、金属めっき層と金属箔とが一体化されることを特徴とする。
封止樹脂層、
封止樹脂層に埋設された電子部品、および
封止樹脂上に形成され、かつ、電子部品の電極に接合されている金属配線層
を有して成り、
金属配線層が、電子部品の電極に対して直接的に接合した金属めっき層およびその金属めっき層と一体化した金属箔から構成されており、また
金属めっき層が、乾式めっき層と湿式めっき層とから成る2層構造を有し、乾式めっき層が電子部品の電極に直接的に接合するように屈曲した形態を有する一方、湿式めっき層が屈曲した形態に起因して形成された“乾式めっき層の窪み部”を満たして金属箔上に厚みを有する形態を有し、また
乾式めっき層と電極との接触界面サイズが電極の電極面よりも小さいことを特徴とする。
まず、本発明の一態様に係る電子部品パッケージの製造方法について説明する。図1(a)~(f)および図2(a)~(c)に本発明の一態様に係る製造方法に関連したプロセスを模式的に示している。本発明の一態様に係る製造方法は、まず工程(i)として、図1(a)に示すように「電子部品が配置される主面Aおよびそれに対向する主面Bを有し、その主面Aの電子部品配置領域40にて貫通穴30が設けられた金属箔10」を用意する。
第1実施形態に従った本発明の製造方法のプロセスを図4(a)~(g)および図5(a)~(c)に示す。
第2実施形態に従った本発明の製造方法のプロセスを図6(a)~(f)に示す。
かかる第3実施形態は、「複数の電子部品パッケージの一括製造」に適した実施形態である。つまり、かかる実施形態に従えば、複数の電子部品パッケージを一括して製造することができる。具体的には、工程(i)では、パッケージ前駆体領域を複数備えた金属箔を用いる。例えば、「電子部品配置領域を取り囲むように金属箔上に設けた土手状支持部材20」または「金属箔をザグリ加工して電子部品配置領域に設けた陥凹部25」などの位置決め手段を複数有する金属箔を用いる。そして、工程(ii)では、複数のパッケージ前駆体領域の各々にて位置付けられるように、複数の電子部品パッケージにそれぞれ用いられる電子部品を各々配置する(図7参照)。このような工程を経ることによって、結果的に「複数の前駆体が一体化した電子部品パッケージ前駆体」を一括して得ることができる。従って、最終的には、ダイシング処理を行うと(図7参照)、複数個の電子部品パッケージが得られることになる。つまり、工程(iv)の後において、“複数のパッケージ前駆体領域”がそれぞれ別個に分かれるようにダイシング処理することによって、複数個の電子部品パッケージを得ることができる。
かかる第4実施形態は、「発光素子パッケージの製造」に適した実施形態である。本発明は、電子部品に発光素子が含まれる場合(つまり、工程(ii)において電子部品配置領域に配置する電子部品として発光素子が含まれている場合)であっても、好適に発光素子パッケージ品の製造を行うことができる。かかる場合、封止樹脂層の形成として、蛍光体層および透明樹脂層の形成を行う。具体的には、金属箔10に配置された発光素子50上に蛍光体層44を配置し、次いで、発光素子および蛍光体層を覆うように透明樹脂層46を形成する(図8(a)~(c)参照)。蛍光体層の形成および透明樹脂層の形成自体は、常套的なLEDパッケージ製造で一般に用いられている方法と同様であってよい。以降の工程は、上記第1実施形態または第2実施形態と同様なプロセスを実施する(図8(d)~(h)参照)。これによって、最終的に所望の発光素子パッケージ形態を有する電子部品パッケージ100を得ることができる。
次に、本発明の一態様に係る電子部品パッケージについて説明する。本発明の一態様に係る電子部品パッケージは、上記製造方法で得られるパッケージである。
このような“面接合(もしくは直接接合)”であるがゆえ、本発明の電子部品パッケージ100では、電子部品50の熱を電極55に面接合(もしくは直接接合)した金属めっき層70およびそれと接合して一体化した厚い金属箔10を介して効率よく外部へと逃がすことができる。つまり、金属めっき層70および厚い金属箔10は、ヒートシンクとしても機能しており、パッケージの放熱対策に特に効果的に寄与し得る。
第1態様:電子部品パッケージを製造するための方法であって、
(i)電子部品が配置される主面Aおよびそれに対向する主面Bを有し、主面Aの電子部品配置領域にて貫通穴が設けられた金属箔を用意する工程、
(ii)電子部品を前記金属箔に配置する工程であって、貫通穴の開口部が電子部品の電極で蓋される形態となるように電子部品を電子部品配置領域に配置する工程、
(iii)電子部品を覆うように金属箔の主面A側に封止樹脂層を形成する工程、ならびに
(iv)金属箔の主面B側に金属めっき層を形成する工程
を含んで成り、
工程(iv)では、乾式めっき法を実施した後で湿式めっき法を実施して金属めっき層を形成しており、金属めっき層によって金属箔の貫通穴が充填され、金属めっき層と金属箔とが一体化されることを特徴とする、電子部品パッケージの製造方法。
第2態様:上記第1態様において、工程(i)の金属箔として電子部品の位置決め手段が設けられた金属箔を用意し、それによって、工程(ii)では位置決め手段を利用して電子部品を電子部品配置領域に配置しており、
位置決め手段としては、電子部品配置領域を取り囲むように金属箔上に設けた土手状支持部材、または、金属箔をザグリ加工して電子部品配置領域に設けた陥凹部を用いることを特徴とする電子部品パッケージの製造方法。
第3態様:上記第1態様または第2態様において、電子部品の電極が、金属箔の貫通穴の開口部よりも大きい電極面を有することを特徴とする電子部品パッケージの製造方法。
第4態様:上記第1態様~第3態様のいずれかにおいて、乾式めっき法を実施することによって、貫通穴を介して電子部品の電極に直接的に接合する乾式めっき層を形成し、また
湿式めっき法を実施することによって、乾式めっき層に直接的に接合する湿式めっき層を形成することを特徴とする電子部品パッケージの製造方法。
第5態様:上記第4態様において、乾式めっき層として、貫通穴の輪郭形状に沿った屈曲形態を有する層を形成することを特徴とする電子部品パッケージの製造方法。
第6態様:上記第4態様または第5態様において、湿式めっき層として、貫通穴を全て満たして金属箔上に厚みを有する層を形成することを特徴とする電子部品パッケージの製造方法。
第7態様:上記第1態様~第6態様のいずれかにおいて、乾式めっき法を実施して100nm~1000nm厚さの乾式めっき層を形成する一方、湿式めっき法を実施して1μm~10μm厚さ(貫通穴の設置領域以外の領域における厚さ)の湿式めっき層を形成することを特徴とする電子部品パッケージの製造方法。
第8態様:上記第1態様~第7態様のいずれかにおいて、乾式めっき法としてスパッタリングを実施する一方、湿式めっき法として電気めっきを実施することを特徴とする電子部品パッケージの製造方法。
第9態様:上記第1態様~第8態様のいずれかにおいて、一体化した金属箔および金属めっき層をパターニング処理に付すことによって、金属配線層を形成することを特徴とする電子部品パッケージの製造方法。
第10態様:上記第1態様~第9態様のいずれかにおいて、
工程(ii)で配置する電子部品として発光素子を含み、
工程(iii)では封止樹脂層の形成に代えて、発光素子上に蛍光体層を配置し、発光素子および蛍光体層を覆うように透明樹脂層を形成することを特徴とする電子部品パッケージの製造方法。
第11態様:電子部品パッケージであって、
封止樹脂層、
封止樹脂層に埋設された電子部品、
封止樹脂上に形成され、かつ、電子部品の電極に接合されている金属配線層
を有して成り、
金属配線層が、電子部品の電極に対して直接的に接合した金属めっき層および金属めっき層と一体化した金属箔から構成されており、また
金属めっき層が、乾式めっき層と湿式めっき層とから成る2層構造を有し、乾式めっき層が電子部品の電極に直接的に接合するように屈曲した形態を有する一方、湿式めっき層が屈曲した形態に起因して形成された乾式めっき層の窪み部を満たして金属箔上に厚みを有する形態を有し、また
乾式めっき層と電極との接触界面サイズが電極の電極面よりも小さいことを特徴とする、電子部品パッケージ。
第12態様:上記第11態様において、電子部品を取り囲むように金属箔上に設けられた土手状支持部材、または、電子部品が少なくとも部分的に収容されるように設けられた金属箔の陥凹部を更に有して成ることを特徴とする電子部品パッケージ。
第13態様:上記第11態様または第12態様において、金属めっき層の厚さ(乾式めっき層の窪み部以外の領域における厚さ)が、金属箔の厚さよりも薄いことを特徴とする電子部品パッケージ。
第14態様:上記第11態様~第13態様のいずれかにおいて、金属箔が18μm~1000μmの厚さを有することを特徴とする電子部品パッケージ。
第15態様:上記第11態様~第14態様のいずれかにおいて、乾式めっき層が100nm~1000nmの厚さを有する一方、湿式めっき層が1μm~10μmの厚さ(乾式めっき層の窪み部以外の領域における厚さ)を有することを特徴とする電子部品パッケージ。
第16態様:上記第11態様~第15態様のいずれかにおいて、
金属箔がCuおよびAlから成る群から選択される少なくとも1種類の金属材料を含んで成り、
乾式めっき層がTi、Cr、NiおよびCuから成る群から選択される少なくとも1種類の金属材料を含んで成り、また
湿式めっき層がCu、NiおよびAlから成る群から選択される少なくとも1種類の金属材料を含んで成ることを特徴とする電子部品パッケージ。
第17態様:上記第16態様において、金属箔と乾式めっき層と湿式めっき層とが同種の金属材料を含んで成ることを特徴とする電子部品パッケージ。
第18態様:上記第11態様~第17態様のいずれかにおいて、金属配線層に対して設けられたレジスト層を更に有していることを特徴とする電子部品パッケージ。
第19態様:上記第11態様~第18態様のいずれかにおいて、金属配線層の少なくとも一部が電子部品パッケージの放熱部材となっていることを特徴とする電子部品パッケージ。
第20態様:上記第11態様~第19態様のいずれかにおいて、電子部品として発光素子を有して成り、また
封止樹脂層に代えて、発光素子上に蛍光体層が設けられ、発光素子および蛍光体層を覆う透明樹脂層が設けられていることを特徴とする電子部品パッケージ。
また、「電子部品の電極露出面」に対してバンプレスの金属めっき層を厚い金属箔と一体化させて形成することができ、その金属めっき層および厚い金属箔をヒートシンクとして好適に利用できることも確認できた。
20 土手状支持部材
25 陥凹部
30 貫通穴
40 電子部品配置領域
50 電子部品
55 電子部品の電極
60 封止樹脂層
44 蛍光体層
46 透明樹脂層
70 金属めっき層
70’ 乾式めっき層
70” 湿式めっき層
80 金属配線層
90 レジスト層
100’ 電子部品パッケージ前駆体
100 電子部品パッケージ
Claims (20)
- 電子部品パッケージを製造するための方法であって、
(i)電子部品が配置される主面Aおよびそれに対向する主面Bを有し、該主面Aの電子部品配置領域にて貫通穴が設けられた金属箔を用意する工程、
(ii)電子部品を前記金属箔に配置する工程であって、前記貫通穴の開口部が電子部品の電極で蓋される形態となるように該電子部品を前記電子部品配置領域に配置する工程、
(iii)前記電子部品を覆うように前記金属箔の前記主面A側に封止樹脂層を形成する工程、ならびに
(iv)前記金属箔の前記主面B側に金属めっき層を形成する工程
を含んで成り、
前記工程(iv)では、乾式めっき法を実施した後で湿式めっき法を実施して前記金属めっき層を形成しており、該金属めっき層によって前記金属箔の前記貫通穴が充填され、該金属めっき層と該金属箔とが一体化されることを特徴とする、電子部品パッケージの製造方法。 - 前記工程(i)の前記金属箔として前記電子部品の位置決め手段が設けられた金属箔を用意し、それによって、前記工程(ii)では該位置決め手段を利用して前記電子部品を前記電子部品配置領域に配置しており、
前記位置決め手段としては、前記電子部品配置領域を取り囲むように前記金属箔上に設けた土手状支持部材、または、前記金属箔をザグリ加工して前記電子部品配置領域に設けた陥凹部を用いることを特徴とする、請求項1に記載の電子部品パッケージの製造方法。 - 前記電子部品の前記電極が、前記金属箔の前記貫通穴の開口部よりも大きい電極面を有することを特徴とする、請求項1に記載の電子部品パッケージの製造方法。
- 前記乾式めっき法を実施することによって、前記貫通穴を介して前記電子部品の前記電極に直接的に接合する乾式めっき層を形成し、また
前記湿式めっき法を実施することによって、前記乾式めっき層に直接的に接合する湿式めっき層を形成することを特徴とする、請求項1に記載の電子部品パッケージの製造方法。 - 前記乾式めっき層として、前記貫通穴の輪郭形状に沿った屈曲形態を有する層を形成することを特徴とする、請求項4に記載の電子部品パッケージの製造方法。
- 前記湿式めっき層として、前記貫通穴を全て満たして前記金属箔上に厚みを有する層を形成することを特徴とする、請求項4に記載の電子部品パッケージの製造方法。
- 前記乾式めっき法を実施して100nm~1000nm厚さの乾式めっき層を形成する一方、前記湿式めっき法を実施して1μm~10μm厚さ(前記貫通穴の設置領域以外の領域における厚さ)の湿式めっき層を形成することを特徴とする、請求項1に記載の電子部品パッケージの製造方法。
- 前記乾式めっき法としてスパッタリングを実施する一方、前記湿式めっき法として電気めっきを実施することを特徴とする、請求項1に記載の電子部品パッケージの製造方法。
- 前記一体化した金属箔および前記金属めっき層をパターニング処理に付すことによって、金属配線層を形成することを特徴とする、請求項1に記載の電子部品パッケージの製造方法。
- 前記工程(ii)で配置する前記電子部品として発光素子を含み、
前記工程(iii)では前記封止樹脂層の形成に代えて、前記発光素子上に蛍光体層を配置し、該発光素子および該蛍光体層を覆うように透明樹脂層を形成することを特徴とする、請求項1に記載の電子部品パッケージの製造方法。 - 電子部品パッケージであって、
封止樹脂層、
前記封止樹脂層に埋設された電子部品、および
前記封止樹脂上に形成され、かつ、前記電子部品の電極に接合されている金属配線層
を有して成り、
前記金属配線層が、前記電子部品の電極に対して直接的に接合した金属めっき層および該金属めっき層と一体化した金属箔から構成されており、また
前記金属めっき層が、乾式めっき層と湿式めっき層とから成る2層構造を有し、該乾式めっき層が前記電子部品の前記電極に直接的に接合するように屈曲した形態を有する一方、該湿式めっき層が該屈曲した形態に起因して形成された該乾式めっき層の窪み部を満たして前記金属箔上に厚みを有する形態を有し、また
前記乾式めっき層と前記電極との接触界面サイズが該電極の電極面よりも小さいことを特徴とする、電子部品パッケージ。 - 前記電子部品を取り囲むように前記金属箔上に設けられた土手状支持部材、または、前記電子部品が少なくとも部分的に収容されるように設けられた前記金属箔の陥凹部を更に有して成ることを特徴とする、請求項11に記載の電子部品パッケージ。
- 前記金属めっき層の厚さ(前記乾式めっき層の前記窪み部以外の領域における厚さ)が、前記金属箔の厚さよりも薄いことを特徴とする、請求項11に記載の電子部品パッケージ。
- 前記金属箔が18μm~1000μmの厚さを有することを特徴とする、請求項11に記載の電子部品パッケージ。
- 前記乾式めっき層が100nm~1000nmの厚さを有する一方、前記湿式めっき層が1μm~10μmの厚さ(前記乾式めっき層の前記窪み部以外の領域における厚さ)を有することを特徴とする、請求項11に記載の電子部品パッケージ
- 前記金属箔がCuおよびAlから成る群から選択される少なくとも1種類の金属材料を含んで成り、
前記乾式めっき層がTi、Cr、NiおよびCuから成る群から選択される少なくとも1種類の金属材料を含んで成り、また
前記湿式めっき層がCu、NiおよびAlから成る群から選択される少なくとも1種類の金属材料を含んで成ることを特徴とする、請求項11に記載の電子部品パッケージ。 - 前記金属箔と前記乾式めっき層と前記湿式めっき層とが同種の金属材料を含んで成ることを特徴とする、請求項16に記載の電子部品パッケージ。
- 前記金属配線層に対して設けられたレジスト層を更に有していることを特徴とする、請求項11に記載の電子部品パッケージ。
- 前記金属配線層の少なくとも一部が前記電子部品パッケージの放熱部材となっていることを特徴とする、請求項11に記載の電子部品パッケージ。
- 前記電子部品として発光素子を有して成り、また
前記封止樹脂層に代えて、前記発光素子上に蛍光体層が設けられ、該発光素子および該蛍光体層を覆う透明樹脂層が設けられていることを特徴とする、請求項11に記載の電子部品パッケージ。
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JP6862087B2 (ja) | 2015-12-11 | 2021-04-21 | 株式会社アムコー・テクノロジー・ジャパン | 配線基板、配線基板を有する半導体パッケージ、およびその製造方法 |
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CN104894514A (zh) * | 2015-03-31 | 2015-09-09 | 嘉兴中科奥度新材料有限公司 | 具有金属纳米粒子镀层的多孔金属箔制品及其制备方法 |
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JP2018018937A (ja) * | 2016-07-27 | 2018-02-01 | Shマテリアル株式会社 | 多列型led用配線部材及びその製造方法 |
JP2021090070A (ja) * | 2019-08-26 | 2021-06-10 | マクセルホールディングス株式会社 | 半導体装置用基板及び半導体装置 |
JP7412376B2 (ja) | 2019-08-26 | 2024-01-12 | マクセル株式会社 | 半導体装置用基板 |
CN115084046A (zh) * | 2022-07-20 | 2022-09-20 | 威海市泓淋电力技术股份有限公司 | 一种混合集成半导体封装及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9595651B2 (en) | 2017-03-14 |
JP5624697B1 (ja) | 2014-11-12 |
US20150236233A1 (en) | 2015-08-20 |
CN104584207A (zh) | 2015-04-29 |
JPWO2014097643A1 (ja) | 2017-01-12 |
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