CN114207824A - 显示装置及其制造方法 - Google Patents

显示装置及其制造方法 Download PDF

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CN114207824A
CN114207824A CN202080055461.2A CN202080055461A CN114207824A CN 114207824 A CN114207824 A CN 114207824A CN 202080055461 A CN202080055461 A CN 202080055461A CN 114207824 A CN114207824 A CN 114207824A
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layer
electrodes
oxide semiconductor
display device
thin film
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山口阳平
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Japan Display Inc
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Abstract

本发明的目的在于抑制晶体管的特性变化。显示装置具有金属层(30)，其由多个层构成，该多个层中的最下层(30L)的离子化倾向比中间层(30M)的离子化倾向低，以最下层(30L)接触的方式搭载于氧化物半导体层(22)。各个沟道区域(24)位于多个第一电极(26)中的对应的一者与多个第二电极(28)中的对应的一者之间，构成多个薄膜晶体管(14)中的对应的一者。氧化物半导体层(22)在彼此相邻的一对薄膜晶体管(14A、14B)所包含的一对沟道区域(24A、24B)之间是连续的。金属层(30)在彼此相邻的一对薄膜晶体管(14A、14B)所包含的一对第一电极(26A、26B)之间是连续的。

Description

显示装置及其制造方法
技术领域
本发明涉及显示装置及其制造方法。
背景技术
薄膜晶体管(TFT)中，存在代替截止电流高且难以抑制漏电流的低温多晶硅，而使用氧化物半导体的情况(专利文献1和2)。底栅型TFT中，以超过构成沟道的氧化物半导体层的端部的方式，形成漏极/源极电极。
现有技术文献
专利文献
专利文献1：日本特开2016-100521号公报。
专利文献2：日本特开2012-104639号公报。
发明内容
发明要解决的问题
当氧化物半导体层的端面的倾斜陡峭时，容易发生漏极/源极电极的层断裂。如果是由多个层构成的漏极/源极电极，则在最下层发生层断裂时，会使得在其上的中间层与氧化物半导体层接触。当最下层由钛、钼、镍等构成，中间层由铝构成时，氧化物半导体层会因为铝而被还原，存在阈值电压变低(耗尽(Deplete))的情况。
本发明的目的在于抑制晶体管的特性变化。
用于解决问题的技术手段
本发明的显示装置，其为具有底栅型的多个薄膜晶体管的显示装置，其特征在于，具有：多个栅极电极；覆盖所述多个栅极电极的栅极绝缘层；搭载于所述栅极绝缘层的氧化物半导体层；和金属层，其由多个层构成，该多个层中的最下层的离子化倾向比中间层的离子化倾向低，所述金属层以所述最下层与所述氧化物半导体层接触的方式搭载于所述氧化物半导体层，所述氧化物半导体层包含多个沟道区域，所述金属层包含多个第一电极和多个第二电极，所述多个沟道区域各自位于所述多个第一电极中的对应的1个第一电极与所述多个第二电极中的对应的1个第二电极之间，构成所述多个薄膜晶体管中的对应的1个薄膜晶体管，所述氧化物半导体层在彼此相邻的一对所述薄膜晶体管所包含的一对所述沟道区域之间是连续的，所述金属层在所述彼此相邻的一对所述薄膜晶体管所包含的一对所述第一电极之间是连续的。
依据本发明，氧化物半导体层在彼此相邻的一对薄膜晶体管所包含的一对沟道区域之间是连续的。即，在金属层之下，没有氧化物半导体层的端部。因此，因为不产生金属层的层断裂，所以能够抑制晶体管的特性变化。
本发明的显示装置的制造方法为，具有底栅型的多个薄膜晶体管的显示装置的制造方法，其特征在于，包括：形成多个栅极电极的工序；以覆盖所述多个栅极电极的方式形成栅极绝缘层的工序；以搭载于所述栅极绝缘层的方式形成氧化物半导体层的工序；形成由多个层构成的金属层的工序，其中，该多个层中的最下层的离子化倾向比中间层的离子化倾向低，所述金属层以所述最下层与所述氧化物半导体层接触的方式搭载于所述氧化物半导体层；将所述金属层图案化为包含多个第一电极和多个第二电极的形状的工序；和在所述金属层的图案化后，将所述氧化物半导体层图案化为包含多个沟道区域的形状的工序，所述多个沟道区域各自位于所述多个第一电极中的对应的1个第一电极与所述多个第二电极中的对应的1个第二电极之间，构成所述多个薄膜晶体管中的对应的1个薄膜晶体管，所述氧化物半导体层的所述形状，在彼此相邻的所述薄膜晶体管所包含的一对所述沟道区域之间是连续的，所述金属层的所述形状，在所述彼此相邻的所述薄膜晶体管所包含的一对所述第一电极之间是连续的。
依据本发明，氧化物半导体层在彼此相邻的一对薄膜晶体管所包含的一对沟道区域之间是连续的。即，在金属层之下，没有氧化物半导体层的端部。因此，不会发生金属层的层断裂，能够抑制晶体管的特性变化。
附图说明
图1是实施方式的显示装置的平面图。
图2是表示每一个像素的元件构造的平面图。
图3是图2所示的构造的III-III线截面图。
图4是图2所示的构造的IV-IV线截面图。
图5是图2所示的构造的V-V线截面图。
图6是图2所示的构造的另一纵截面图。
图7是表示多个栅极电极的形成工艺的图。
图8是表示氧化物半导体层的形成工艺的图。
图9是表示金属层的图案化工艺的图。
图10是表示氧化物半导体层的图案化工艺的图。
图11是表示变形例的显示装置的截面图。
具体实施方式
以下，关于本发明的实施方式参照附图进行说明。但是，本发明在不脱离其主旨的范围内能够以各种方式实施，不限定地解释为以下例示的实施方式的记载内容。
附图为了使说明更加明确，与实际的方式相比，关于各部的宽度、厚度、形状等存在示意性地表示的情况，仅作为一个例子，不是对本发明的解释加以限定的内容。本说明书和附图中，与关于已公开的附图所说明的内容具有同样的功能的要素，标注相同的附图标记，而省略重复的说明。
并且，在本发明的详细的说明中，在规定某构成物与其他构成物的位置关系时，所谓“在……上”、“在……下”不仅包括位于某构成物的正上方或者正下方的位置的情况，除非另有说明，也包括之间还存在其他的构成物的情况。
图1是实施方式的显示装置的平面图。显示装置包括显示器DP。显示器DP在具有可挠性的情况下，在处于显示图像的显示区域DA的外侧的弯曲对应区域BA中被弯曲。在显示器DP中搭载有集成电路芯片CP，其用于驱动显示图像用的元件。在显示器DP中，在显示区域DA的外侧连接有柔性印制基板FP。显示装置例如是有机电致发光显示装置。显示区域DA中，例如组合由红、绿和蓝构成的多色的像素(子像素)，而显示全彩色图像。此外，显示装置也可以是电子纸。
图2是表示每一个像素的元件构造的平面图。图3是图2所示的构造的III-III线截面图。图4是图2所示的构造的IV-IV线截面图。图5是图2所示的构造的V-V线截面图。
基板10可以由玻璃构成，如果要求可挠性则可以由聚酰亚胺等的树脂构成。在基板10上层叠有底涂层12。底涂层12由硅氧化膜等的绝缘膜构成，可以是多层，也可以是单层。
显示装置包括底栅型的多个薄膜晶体管14。多个薄膜晶体管14分别包括多个栅极电极16。多个栅极电极16各自与多个扫描线18中的对应的一者形成为一体。显示装置具有覆盖多个栅极电极16的栅极绝缘层20。栅极绝缘层20为硅氧化膜。
薄膜晶体管14具有氧化物半导体层22。氧化物半导体层22例如由IGZO(IndiumGallium Zinc Oxide)或IZO(Indium Zinc Oxide)构成。氧化物半导体层22搭载在栅极绝缘层20。栅极电极16的上方存在氧化物半导体层22。薄膜晶体管14具有氧化物半导体层22作为沟道区域24，因此能够减小电流不均，并且能够将截止电流抑制为非常低。
氧化物半导体层22包含多个沟道区域24。多个沟道区域24各自位于多个第一电极26中的对应的一者与多个第二电极28中的对应的一者之间，构成多个薄膜晶体管14中的对应的一者。氧化物半导体层22在彼此相邻的一对薄膜晶体管14A、14B所包含的一对沟道区域24A、24B之间是连续的。
显示装置具有金属层30。金属层30由多个层构成。最下层30L与氧化物半导体层22相接触地搭载于该氧化物半导体层22。在离子化倾向中，最下层30L比中间层30M低。作为一例，最下层30L由钛形成。中间层30M由铝形成。中间层30M位于最下层30L与最上层30U之间。最上层30U由与最下层30L相同的材料形成。
在此，构成金属层30的最下层30L的膜厚为50nm，中间层30M的膜厚为400nm，氧化物半导体层22的膜厚为75nm程度。
金属层30包含多个第一电极26。多个第一电极26各自与多个影像信号线32中的对应的一者形成为一体。金属层30在彼此相邻的一对薄膜晶体管14A、14B所包含的一对第一电极26A、26B之间是连续的。金属层30包含多个第二电极28。多个第二电极28各自与多个像素电极34中的对应的一者连接。
依据本实施方式，氧化物半导体层22在彼此相邻的一对薄膜晶体管14A、14B所包含的一对沟道区域24A、24B之间是连续的。即，在金属层30之下，没有氧化物半导体层22的端部。因此，不会发生金属层30的层断裂，所以能够抑制薄膜晶体管14的特性变化。如上所述，在最下层30L的膜厚比氧化物半导体层22的膜厚薄的情况下，如果在金属层30下存在氧化物半导体层22的端部，则特别容易发生层断裂，因此本实施方式的结构是有效的。当然，在最下层30L的膜厚比氧化物半导体层22的膜厚厚的情况下，由于存在层断裂的可能性，因此同样是有效的。
多个薄膜晶体管14各自包含对应的第一电极26和第二电极28作为漏极电极和源极电极。薄膜晶体管14的沟道宽度W(沟道区域24的宽度)比漏极电极和源极电极的任一者的宽度小。
在金属层30上搭载钝化层36。钝化层36为硅氧化膜和硅氮化膜。钝化层36由平坦化层38覆盖。平坦化层38与通过CVD(Chemical Vapor Deposition)等形成的无机绝缘材料相比，表面的平坦性优异，因此由感光性丙烯酸等的树脂形成。
在平坦化层38上排列有多个像素电极34。像素电极34作为反射电极而形成。像素电极34贯通平坦化层38和钝化层36，与第二电极28连接。
以在平坦化层38上且搭载在像素电极34的周边缘的方式，形成有称为堰堤(肋)的、成为彼此相邻的像素区域的分隔壁的绝缘层40。作为绝缘层40，与平坦化层38同样地能够使用感光性丙烯酸等。绝缘层40以将像素电极34的表面作为发光区域而露出的方式开口，其开口端优选成为平缓的锥形形状。如果开口端形成为陡峭的形状，则会发生形成于其上的电致发光层42的覆盖范围不良。
在像素电极34上层叠有由例如有机材料构成的电致发光层42。电致发光层42为从像素电极34侧起依次地层叠有空穴注入输送层、发光层和电子注入输送层的构造。例如，多个发光层与多个像素电极34相对应且分离，空穴注入输送层的至少1层和电子注入输送层的至少1层连续地与多个发光层重叠。
在电致发光层42上设置有相对电极44。在此，由于采用顶部发射构造，相对电极44为透明的。例如，将Mg层和Ag层作为来自电致发光层42的出射光透过的程度的薄膜而形成。依照后述的电致发光层42的形成顺序，像素电极34成为阳极，相对电极44成为阴极。由多个像素电极34、相对电极44和多个像素电极34各自的中央部与相对电极44之间存在的电致发光层42构成发光元件。
在相对电极44上形成有密封层46。密封层46的功能之一是防止水分从外部侵入电致发光层42，因此要求高气阻性。密封层46形成为有机膜48和上下夹着该有机膜48的一对无机膜50(例如氮化硅膜)的层叠构造。一对无机膜50与有机膜48的周围相接触地重叠。在无机膜50与有机膜48之间，以提高密接性为目的之一，也可以设置有氧化硅膜或非晶硅层。在密封层46层叠有增强有机膜52。在增强有机膜52上经由粘合层54粘贴有偏光板56(例如圆偏光板)。
图6是图2所示的构造的另一纵截面图。与栅极电极16形成为一体的扫描线18，在图1所示的显示区域DA的外侧，连接于金属层30所包含的配线58。扫描线18与配线58之间存在有氧化物半导体层22，由于其膜厚为100nm以下程度的较薄膜厚，因此能够确保导电性。由此，能够从配线58对扫描线18(栅极电极16)施加电压。
图7～图10是用于说明实施方式的显示装置的制造方法的图。
如图7所示形成多个栅极电极16。将多个栅极电极16各自以与多个扫描线18中的对应的一者成为一体的方式形成。栅极电极16的图案通过氟类的干蚀刻来进行。并且，以覆盖多个栅极电极16的方式，形成图4～图6所示的栅极绝缘层20(图7中省略)。
如图8所示，形成氧化物半导体层22。接着，在氧化物半导体层22上形成金属层30。氧化物半导体层22和金属层30在基板10的整面形成。金属层30由多个层构成，详细内容如上所述。
如图9所示，将金属层30进行图案化。详细而言，将金属层30进行图案化为包含多个第一电极26和多个第二电极28的形状。在图案化中使用例如氯气。多个第一电极26各自以与多个影像信号线32中的对应的一者成为一体的方式形成。图案化了的金属层30在彼此相邻的薄膜晶体管14A、14B(参照图10)所包含的一对第一电极26A、26B之间是连续的。
如图10所示，在金属层30的图案化后，将氧化物半导体层22进行图案化。详细而言，将氧化物半导体层22图案化为包含多个沟道区域24的形状。在图案化中，使用未图示的蚀刻掩模，例如使用包含草酸的蚀刻液。在氧化物半导体层22的图案化时，除了上述的未图示的蚀刻掩模以外，已经图案化了的金属层30也作为蚀刻掩模发挥功能，因此，彼此相邻的薄膜晶体管14A、14B所包含的一对沟道区域24A、24B之间是连续的。
多个沟道区域24各自位于多个第一电极26中的对应的一者与多个第二电极28中的对应的一者之间，构成多个薄膜晶体管14中的对应的一者。多个薄膜晶体管14各自以具有比漏极电极和源极电极的任一者的宽度小的沟道宽度W的方式形成。
依据本实施方式，氧化物半导体层22在彼此相邻的一对薄膜晶体管14A、14B所包含的一对沟道区域24A、24B之间是连续的。即，在金属层30之下，没有氧化物半导体层22的端部。因此，不会发生金属层30的层断裂，所以能够抑制晶体管的特性变化。
图11是表示变形例的显示装置的截面图。在上述实施方式中，说明了有机电致发光显示装置，在变形例中说明液晶显示装置。
液晶显示装置是纵电场型。因此，像素电极134和共通电极144的两者位于液晶层160下。液晶层160上下被取向膜162夹着，像素电极134位于下方取向膜162的更下方位置。在像素电极134和共通电极144之间存在绝缘膜164。在上方取向膜162的上方设置有保护膜166。其他的内容与上述的实施方式相同。
本发明不限于上述的实施方式而能够进行各种变形。例如，在实施方式中所说明的结构，能够用实质上相同的结构、起到相同的作用效果的结构或者能够达成相同的目的的结构来置换。

Claims (11)

1.一种具有底栅型的多个薄膜晶体管的显示装置，其特征在于，具有：
多个栅极电极；
覆盖所述多个栅极电极的栅极绝缘层；
搭载于所述栅极绝缘层的氧化物半导体层；和
金属层，其由多个层构成，该多个层中的最下层的离子化倾向比中间层的离子化倾向低，所述金属层以所述最下层与所述氧化物半导体层接触的方式搭载于所述氧化物半导体层，
所述氧化物半导体层包含多个沟道区域，
所述金属层包含多个第一电极和多个第二电极，
所述多个沟道区域各自位于所述多个第一电极中的对应的1个第一电极与所述多个第二电极中的对应的1个第二电极之间，构成所述多个薄膜晶体管中的对应的1个薄膜晶体管，
所述氧化物半导体层在彼此相邻的一对所述薄膜晶体管所包含的一对所述沟道区域之间是连续的，
所述金属层在所述彼此相邻的一对所述薄膜晶体管所包含的一对所述第一电极之间是连续的。
2.如权利要求1所述的显示装置，其特征在于：
所述多个栅极电极各自与多个扫描线中的对应的1个扫描线形成为一体，
所述多个第一电极各自与多个影像信号线中的对应的1个影像信号线形成为一体。
3.如权利要求1所述的显示装置，其特征在于：
所述多个第二电极各自连接于多个像素电极中的对应的1个像素电极。
4.如权利要求1所述的显示装置，其特征在于：
所述金属层的最上层由与所述最下层相同的材料形成，
所述中间层位于所述最下层与所述最上层之间。
5.如权利要求1所述的显示装置，其特征在于：
所述最下层由钛形成，
所述中间层由铝形成。
6.如权利要求1～5中任一项所述的显示装置，其特征在于：
所述多个薄膜晶体管各自具有比漏极电极和源极电极的任一者的宽度小的沟道宽度。
7.一种显示装置的制造方法，该显示装置具有底栅型的多个薄膜晶体管，所述显示装置的制造方法的特征在于，包括：
形成多个栅极电极的工序；
以覆盖所述多个栅极电极的方式形成栅极绝缘层的工序；
以搭载于所述栅极绝缘层的方式形成氧化物半导体层的工序；
形成由多个层构成的金属层的工序，其中，该多个层中的最下层的离子化倾向比中间层的离子化倾向低，所述金属层以所述最下层与所述氧化物半导体层接触的方式搭载于所述氧化物半导体层；
将所述金属层图案化为包含多个第一电极和多个第二电极的形状的工序；和
在所述金属层的图案化后，将所述氧化物半导体层图案化为包含多个沟道区域的形状的工序，
所述多个沟道区域各自位于所述多个第一电极中的对应的1个第一电极与所述多个第二电极中的对应的1个第二电极之间，构成所述多个薄膜晶体管中的对应的1个薄膜晶体管，
所述氧化物半导体层的所述形状，在彼此相邻的所述薄膜晶体管所包含的一对所述沟道区域之间是连续的，
所述金属层的所述形状，在所述彼此相邻的所述薄膜晶体管所包含的一对所述第一电极之间是连续的。
8.如权利要求7所述的显示装置的制造方法，其特征在于：
将所述多个栅极电极各自与多个扫描线中的对应的1个扫描线形成为一体，
将所述多个第一电极各自与多个影像信号线中的对应的1个影像信号线形成为一体。
9.如权利要求7所述的显示装置的制造方法，其特征在于：
所述金属层的最上层由与所述最下层相同的材料形成，
将所述中间层形成在所述最下层与所述最上层之间。
10.如权利要求7所述的显示装置的制造方法，其特征在于：
使用钛来形成所述最下层，
使用铝来形成所述中间层。
11.如权利要求7～10中任一项所述的显示装置的制造方法，其特征在于：
所述多个薄膜晶体管各自以具有比漏极电极和源极电极的任一者的宽度小的沟道宽度的方式形成。
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