WO2012121021A1 - 光反射性異方性導電接着剤及び発光装置 - Google Patents
光反射性異方性導電接着剤及び発光装置 Download PDFInfo
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- WO2012121021A1 WO2012121021A1 PCT/JP2012/054411 JP2012054411W WO2012121021A1 WO 2012121021 A1 WO2012121021 A1 WO 2012121021A1 JP 2012054411 W JP2012054411 W JP 2012054411W WO 2012121021 A1 WO2012121021 A1 WO 2012121021A1
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- 239000000853 adhesive Substances 0.000 title claims abstract description 86
- 230000001070 adhesive effect Effects 0.000 title claims abstract description 86
- 239000002245 particle Substances 0.000 claims abstract description 213
- 239000011342 resin composition Substances 0.000 claims abstract description 54
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 53
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000002156 mixing Methods 0.000 claims abstract description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011787 zinc oxide Substances 0.000 claims abstract description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 3
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052882 wollastonite Inorganic materials 0.000 claims abstract description 3
- 239000010456 wollastonite Substances 0.000 claims abstract description 3
- 229920005989 resin Polymers 0.000 claims description 34
- 239000011347 resin Substances 0.000 claims description 34
- 239000010954 inorganic particle Substances 0.000 claims description 25
- 239000007769 metal material Substances 0.000 claims description 12
- 239000002923 metal particle Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000007771 core particle Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 150000008065 acid anhydrides Chemical class 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052582 BN Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 24
- 239000004593 Epoxy Substances 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 239000010931 gold Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 238000001723 curing Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 10
- -1 polyethylene Polymers 0.000 description 10
- 230000004907 flux Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 229920005992 thermoplastic resin Polymers 0.000 description 8
- 125000002723 alicyclic group Chemical group 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002484 inorganic compounds Chemical class 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001579 optical reflectometry Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 239000003431 cross linking reagent Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 238000007500 overflow downdraw method Methods 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000007870 radical polymerization initiator Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 2
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- NIDNOXCRFUCAKQ-UMRXKNAASA-N (1s,2r,3s,4r)-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid Chemical compound C1[C@H]2C=C[C@@H]1[C@H](C(=O)O)[C@@H]2C(O)=O NIDNOXCRFUCAKQ-UMRXKNAASA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- GVPODVKBTHCGFU-UHFFFAOYSA-N 2,4,6-tribromoaniline Chemical compound NC1=C(Br)C=C(Br)C=C1Br GVPODVKBTHCGFU-UHFFFAOYSA-N 0.000 description 1
- LJBWJFWNFUKAGS-UHFFFAOYSA-N 2-[bis(2-hydroxyphenyl)methyl]phenol Chemical compound OC1=CC=CC=C1C(C=1C(=CC=CC=1)O)C1=CC=CC=C1O LJBWJFWNFUKAGS-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical compound NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- VEORPZCZECFIRK-UHFFFAOYSA-N 3,3',5,5'-tetrabromobisphenol A Chemical compound C=1C(Br)=C(O)C(Br)=CC=1C(C)(C)C1=CC(Br)=C(O)C(Br)=C1 VEORPZCZECFIRK-UHFFFAOYSA-N 0.000 description 1
- ALKYHXVLJMQRLQ-UHFFFAOYSA-N 3-Hydroxy-2-naphthoate Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 ALKYHXVLJMQRLQ-UHFFFAOYSA-N 0.000 description 1
- IBFJDBNISOJRCW-UHFFFAOYSA-N 3-methylphthalic acid Chemical compound CC1=CC=CC(C(O)=O)=C1C(O)=O IBFJDBNISOJRCW-UHFFFAOYSA-N 0.000 description 1
- YBRVSVVVWCFQMG-UHFFFAOYSA-N 4,4'-diaminodiphenylmethane Chemical compound C1=CC(N)=CC=C1CC1=CC=C(N)C=C1 YBRVSVVVWCFQMG-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- ODJUOZPKKHIEOZ-UHFFFAOYSA-N 4-[2-(4-hydroxy-3,5-dimethylphenyl)propan-2-yl]-2,6-dimethylphenol Chemical compound CC1=C(O)C(C)=CC(C(C)(C)C=2C=C(C)C(O)=C(C)C=2)=C1 ODJUOZPKKHIEOZ-UHFFFAOYSA-N 0.000 description 1
- XRBNDLYHPCVYGC-UHFFFAOYSA-N 4-phenylbenzene-1,2,3-triol Chemical group OC1=C(O)C(O)=CC=C1C1=CC=CC=C1 XRBNDLYHPCVYGC-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- JSQNTEXFVVQFBS-UHFFFAOYSA-N C(C1CO1)N.NC1=C(C(=O)O)C=CC=C1 Chemical compound C(C1CO1)N.NC1=C(C(=O)O)C=CC=C1 JSQNTEXFVVQFBS-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241001455273 Tetrapoda Species 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- GKXVJHDEWHKBFH-UHFFFAOYSA-N [2-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC=C1CN GKXVJHDEWHKBFH-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- YMHQVDAATAEZLO-UHFFFAOYSA-N cyclohexane-1,1-diamine Chemical compound NC1(N)CCCCC1 YMHQVDAATAEZLO-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 1
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- VBZWSGALLODQNC-UHFFFAOYSA-N hexafluoroacetone Chemical compound FC(F)(F)C(=O)C(F)(F)F VBZWSGALLODQNC-UHFFFAOYSA-N 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- ZXQPRTUUOOOZAS-UHFFFAOYSA-N oxiran-2-yl(oxiran-2-ylmethoxy)methanamine Chemical compound C1OC1C(N)OCC1CO1 ZXQPRTUUOOOZAS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- GROMGGTZECPEKN-UHFFFAOYSA-N sodium metatitanate Chemical compound [Na+].[Na+].[O-][Ti](=O)O[Ti](=O)O[Ti]([O-])=O GROMGGTZECPEKN-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to a light-reflective anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board, and a light-emitting device formed by mounting the light-emitting element on a wiring board using the adhesive. .
- a light emitting device using a light emitting diode (LED) element is widely used, and the structure of an old type light emitting device is such that, as shown in FIG. 3, an LED element 33 is bonded to a substrate 31 with a die bond adhesive 32, The p electrode 34 and the n electrode 35 on the upper surface are wire-bonded to the connection terminal 36 of the substrate 31 with a gold wire 37, and the entire LED element 33 is sealed with a transparent mold resin 38.
- the gold wire absorbs light having a wavelength of 400 to 500 nm emitted from the LED element 33 to the upper surface side, and a part of the light emitted to the lower surface side is also emitted.
- the luminous efficiency of the LED element 33 is reduced by being absorbed by the die bond adhesive 32.
- the LED element 33 be flip-chip mounted (Patent Document 1).
- bumps 39 are formed on the p electrode 34 and the n electrode 35, respectively, and the p electrode 34 and the n electrode 35 are insulated from the bump forming surface of the LED element 33.
- the light reflection layer 40 is provided.
- the LED element 33 and the substrate 31 are cured by using an anisotropic conductive paste (ACP) 41 or an anisotropic conductive film (ACF) (not shown) using an epoxy resin as a binder resin. Connection is fixed. Therefore, in the light emitting device of FIG. 4, the light emitted upward of the LED element 33 is not absorbed by the gold wire, and most of the light emitted downward is reflected by the light reflecting layer 40 and emitted upward. Luminous efficiency (light extraction efficiency) does not decrease.
- the LED element 33 must be provided with the light reflecting layer 40 by a metal vapor deposition method or the like so that the p-electrode 34 and the n-electrode 35 are insulated from each other. There was an inevitable problem.
- the surface of the conductive particles coated with gold, nickel or copper in the cured ACP or ACF is brown or dark brown, and the conductive particles are dispersed.
- the epoxy resin binder itself has a brown color due to the imidazole-based latent curing agent that is commonly used for curing, and it is difficult to improve the light emission efficiency (light extraction efficiency) of the light emitted from the light-emitting element. There was also a problem of being.
- An object of the present invention is to solve the above-described problems of the prior art, and light-emitting elements such as light-emitting diodes (LEDs) are flip-chip mounted on a wiring board using an anisotropic conductive adhesive to emit light.
- LEDs light-emitting diodes
- the light emitting efficiency can be improved without providing a light reflecting layer on the LED element which causes an increase in manufacturing cost, and the electrical conduction generated in the anisotropic conductive connection portion of the light emitting device due to a change in environmental temperature. It is to be able to suppress or prevent a decrease in reliability and occurrence of cracks.
- the present inventors do not reduce the light emission efficiency.
- the luminous efficiency of the light-emitting element can be prevented from being lowered.
- the spherical light-reflective insulating particles are more luminous than the needle-shaped light-reflective insulating particles.
- needle-like light-reflective insulating particles are more effective than the spherical light-reflective insulating particles for reducing the conduction reliability of anisotropic conductive joints and suppressing cracking.
- the present invention is a light-reflective anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board, and includes a thermosetting resin composition, conductive particles, and light-reflective needle-like. Containing insulating particles and light reflective spherical insulating particles, The amount of the light-reflective needle-like insulating particles and the light-reflective spherical insulating particles in the thermosetting resin composition is 1 to 50% by volume with respect to the thermosetting resin composition, respectively, and the light-reflective spherical shape.
- a light-reflective anisotropic conductive adhesive having a blending ratio (V / V) of insulating particles to light-reflective needle-like insulating particles of 1: 1 to 10.
- the present invention provides a light emitting device in which a light emitting element is mounted on a wiring board by a flip chip method through this light reflective anisotropic conductive adhesive.
- light-reflective needle-like insulating particles and spherical insulating particles are blended in an amount of 1 to 50% by volume with respect to the thermosetting resin composition, respectively.
- the blending ratio (V / V) of the reflective spherical insulating particles to the light reflective needle-like insulating particles is set to 1: 1 to 10.
- FIG. 1A is a cross-sectional view of light-reflective conductive particles used in the light-reflective anisotropic conductive adhesive of the present invention.
- FIG. 1B is a cross-sectional view of light-reflective conductive particles used in the light-reflective anisotropic conductive adhesive of the present invention.
- FIG. 2 is a cross-sectional view of the light emitting device of the present invention.
- FIG. 3 is a cross-sectional view of a conventional light emitting device.
- FIG. 4 is a cross-sectional view of a conventional light emitting device.
- the light-reflective anisotropic conductive adhesive of the present invention is used for anisotropic conductive connection of a light-emitting element to a wiring board, and includes a thermosetting resin composition, conductive particles, and a light-reflective needle-like shape. Insulating particles and light-reflective spherical insulating particles are contained.
- the reason why the light-reflective acicular insulating particles and the light-reflective spherical insulating particles are used in combination as the light-reflective insulating particles is as follows.
- the light-reflective insulating particles are contained in the thermosetting resin composition
- the stretchability of the resin composition decreases (hardens) with temperature change
- the thermosetting resin composition or thru Cracks are likely to occur at the interface between the light-reflective insulating particles and the thermosetting resin composition due to the internal stress of the cured product. If a crack occurs in the light-reflective anisotropic conductive adhesive, conduction reliability is impaired. Therefore, the light-reflective anisotropic conductive adhesive needs to have excellent toughness, but by adding light-reflective acicular insulating particles as light-reflective insulating particles to the thermosetting resin composition. High toughness can be imparted to the light-reflective anisotropic conductive adhesive.
- thermosetting resin composition the needle-like light-reflective insulating particles arranged in random directions are easy to bend and bend themselves, so that the thermosetting resin accompanying the temperature change.
- the internal stress of the composition can be propagated and absorbed in the needle-like crystal, and the internal stress can be suppressed from being transmitted to the thermosetting resin composition. Therefore, the light-reflective anisotropic conductive adhesive containing light-reflective acicular insulating particles exhibits excellent toughness, and does not generate cracks even if the thermosetting resin composition expands or contracts due to temperature changes. It is possible to suppress or prevent, and to suppress or prevent a decrease in conduction reliability.
- the light-reflective acicular insulating particles when only the light-reflective acicular insulating particles are used as the light-reflective insulating particles, the light reflectance tends to decrease. Therefore, in the present invention, spherical light-reflective insulating particles having good light reflection characteristics are used in combination with light-reflective needle-like insulating particles.
- the blending amount of such light-reflective needle-like insulating particles in the thermosetting resin composition is 1 to 50% by volume, preferably 5 to 25% by volume with respect to the thermosetting resin composition. This is because if the blending amount of the light-reflective needle-like insulating particles is less than 1% by volume, the occurrence of cracks in the joint due to the light-reflective anisotropic conductive adhesive and the deterioration of the conduction reliability are sufficiently suppressed or prevented.
- the amount of the thermosetting resin composition is relatively reduced, the adhesiveness of the light-reflective anisotropic conductive adhesive is lowered, and the light-reflective spherical insulating particles This is because there is a tendency that the improvement of the light reflectivity of the joint by the light-reflective anisotropic conductive adhesive tends to be insufficient, and the effect of the present invention can be obtained within this range.
- the blending amount of the light-reflective spherical insulating particles in the thermosetting resin composition is 1 to 50% by volume, preferably 2 to 25% by volume with respect to the thermosetting resin composition. This is because when the blending amount of the light-reflective spherical insulating particles is less than 1% by volume, the light reflectivity of the joint by the light-reflective anisotropic conductive adhesive tends to be insufficiently improved.
- the amount of the thermosetting resin composition is relatively reduced, the adhesiveness of the light-reflective anisotropic conductive adhesive is lowered, and the amount of the light-reflective acicular insulating particles is also reduced, thereby reflecting light. This is because it is difficult to suppress the occurrence of cracks in the joint due to the anisotropic anisotropic conductive adhesive and to make it difficult to improve the decrease in conduction reliability, and the effect of the present invention can be obtained within this range.
- the blending ratio (V / V) of the light-reflective spherical insulating particles to the light-reflective needle-like insulating particles is 1: 1 to 10, preferably 1: 2 to 8.
- the blending amount of the light-reflective spherical insulating particles is out of this range and is relatively smaller than the light-reflective needle-like insulating particles, the light-reflecting properties tend to deteriorate, and conversely, the amount is relatively large. This is because crack resistance tends to be reduced.
- the light-reflective acicular insulating particles it is preferable to use a white acicular inorganic compound when applied to a light-emitting device that emits visible light.
- a white acicular inorganic compound when applied to a light-emitting device that emits visible light.
- Such light-reflective needle-like insulating particles reflect the light incident on the light-reflective anisotropic conductive adhesive to the outside, and the light-reflective needle-like insulating particles themselves exhibit a white color. The wavelength dependence of the light reflection characteristics can be reduced, and visible light can be efficiently reflected.
- the diameter of the light-reflective needle-like insulating particles is preferably 5 ⁇ m or less. Further, the aspect ratio is preferably larger than 10 in order to sufficiently propagate and absorb the internal stress of the thermosetting resin composition, and the light-reflective needle-like insulating particles are hardly broken, In order to disperse uniformly in the curable resin composition, it is preferably less than 35. In order to further improve the dispersibility in the thermosetting resin composition, it is more preferably less than 20.
- Preferred specific examples of such light-reflective acicular insulating particles include zinc oxide whisker, titanium oxide whisker, potassium titanate whisker, titanate whisker such as sodium titanate whisker, aluminum borate whisker, wollastonite.
- white needle-shaped inorganic particles such as (kaline silicate needle crystals). These can use 1 type, or 2 or more types.
- the whisker is a crystal grown in a needle shape by a special manufacturing method, and since there is no disorder in the crystal structure, it has an advantage that it is highly elastic and hardly deformed. Since these inorganic compounds exhibit white color in a light emitting device that emits visible light, the wavelength dependency of the light reflection property with respect to visible light is small, and visible light is easily reflected.
- the zinc oxide whisker has a high whiteness and is a catalyst for photodegradation even when photocuring of the cured product of the thermosetting resin composition in the cured anisotropic conductive adhesive is concerned. It is particularly preferable because it has no property.
- the light-reflective acicular insulating particles are formed by combining the center and apex of a tetrahedron such as Tetrapod (registered trademark) instead of such a single acicular crystal. You may make it use the crystal
- the white needle-like inorganic particles of double needle crystals are superior in that they have a higher thermal conductivity than the white needle-like inorganic particles of single needle crystals, but have a bulkier crystal structure than single needle crystals. Therefore, it is necessary to be careful not to damage the substrate or the joined part of the element by the needle-like part during thermocompression bonding.
- These light-reflective needle-like insulating particles may be treated with a silane coupling agent, for example.
- a silane coupling agent for example.
- the dispersibility thereof in the thermosetting resin composition can be improved.
- the light-reflective acicular insulating particles obtained by treating acicular inorganic particles, preferably zinc oxide whiskers with a silane coupling agent can be uniformly mixed in the thermosetting resin composition in a short time. it can.
- the light-reflective needle-like insulating particles have a refractive index (JIS K7142) that is preferably larger than the refractive index (JIS K7142) of the cured product of the thermosetting resin composition, more preferably at least about 0.02. It is preferable. This is because if the difference in refractive index is small, the light reflection efficiency at the interface between them will decrease.
- the light-reflective spherical insulating particles used in combination with the light-reflective acicular insulating particles use a spherical inorganic compound that exhibits white when applied to a light-emitting device that emits visible light. It is preferable to do.
- Such light-reflective spherical insulating particles reflect the light incident on the light-reflective anisotropic conductive adhesive to the outside, and the light-reflective spherical insulating particles themselves exhibit a white color, so that light reflection with respect to visible light is performed. The wavelength dependency of characteristics can be reduced, and visible light can be efficiently reflected.
- the thickness is preferably 0.02 to 20 ⁇ m, more preferably 0.2 to 1 ⁇ m.
- Such light-reflective spherical insulating particles are selected from the group consisting of titanium oxide (TiO 2 ), boron nitride (BN), zinc oxide (ZnO), and aluminum oxide (Al 2 O 3 ). At least one kind of inorganic particles may be mentioned. Among these, it is preferable to use TiO 2 from the viewpoint of a high refractive index. Moreover, you may form Si and Al coat layer in these surfaces by a conventional method as needed.
- the light-reflective spherical insulating particles have a refractive index (JIS K7142) that is preferably larger than the refractive index of the cured product of the thermosetting resin composition (JIS K7142), more preferably at least about 0.02. Is preferred. This is because if the difference in refractive index is small, the light reflection efficiency at the interface between them decreases.
- the light-reflective spherical insulating particles resin-coated metal particles in which the surface of the spherical metal particles is coated with a transparent insulating resin can be used.
- the metal material for the spherical metal particles include nickel, silver, and aluminum. Among them, silver is preferable.
- the average particle diameter of the resin-coated metal particles as the light-reflective spherical insulating particles varies depending on the shape. Generally, if the particle diameter is too large, the anisotropic conductive connection by the conductive particles may be inhibited, and if it is too small, the light is reflected. Therefore, it is preferably 0.1 to 30 ⁇ m, and more preferably 0.2 to 10 ⁇ m.
- the average particle diameter of the resin-coated metal particles is a size including the insulating coating.
- the resin in the resin-coated metal particles as such light-reflective spherical insulating particles various insulating resins can be used. From the standpoint of mechanical strength and transparency, a cured product of acrylic resin can be preferably used.
- a preferable example is a resin obtained by radical copolymerization of methyl methacrylate and 2-hydroxyethyl methacrylate in the presence of a radical polymerization initiator such as an organic peroxide such as benzoyl peroxide. In this case, it is more preferably crosslinked with an isocyanate-based crosslinking agent such as 2,4-tolylene diisocyanate.
- the metal particles it is preferable to introduce a ⁇ -glycidoxy group, a vinyl group, or the like into the metal surface in advance with a silane coupling agent.
- Such resin-coated metal particles are prepared, for example, by putting metal particles and a silane coupling agent in a solvent such as toluene and stirring for about 1 hour at room temperature, and then, if necessary, a radical monomer and a radical polymerization initiator. Then, a crosslinking agent is added, and the mixture is stirred by heating to the radical polymerization starting temperature.
- metal particles used in conventional conductive particles for anisotropic conductive connection can be used.
- examples thereof include gold, nickel, copper, silver, solder, palladium, aluminum, alloys thereof, multilayered products thereof (for example, nickel plating / gold flash plating products), and the like.
- gold, nickel, and copper turn the conductive particles brown, so that the effects of the present invention can be enjoyed over other metal materials.
- metal-coated resin particles obtained by coating resin particles with a metal material can be used.
- resin particles include styrene resin particles, benzoguanamine resin particles, and nylon resin particles.
- a method of coating the resin particles with a metal material a conventionally known method can be employed, and an electroless plating method, an electrolytic plating method, or the like can be used.
- the layer thickness of the metal material to be coated is sufficient to ensure good conduction reliability, and is usually 0.1 to 3 ⁇ m although it depends on the particle size of the resin particles and the type of metal.
- the average particle size of the resin particles is preferably 1 to 20 ⁇ m, more preferably 3 to 10 ⁇ m, particularly preferably 3 to 5 ⁇ m. It is.
- the shape of the core particle 1 is preferably a spherical shape, but may be a flake shape or a rugby ball shape.
- the metal-coated resin particles have a spherical shape, and if the particle size is too large, the conduction reliability is lowered, so that it is preferably 1 to 20 ⁇ m, more preferably 3 to 10 ⁇ m.
- 1A and 1B are sectional views of such light-reflective conductive particles 10 and 20. First, the light reflective conductive particles in FIG. 1A will be described.
- the light-reflective conductive particles 10 are selected from core particles 1 coated with a metal material, and titanium oxide (TiO 2 ) particles, zinc oxide (ZnO) particles, or aluminum oxide (Al 2 O 3 ) particles on the surface thereof. And a light reflection layer 3 formed of at least one kind of inorganic particles 2. Titanium oxide particles, zinc oxide particles, or aluminum oxide particles are inorganic particles that exhibit a white color under sunlight. Accordingly, the light reflecting layer 3 formed from them exhibits white to gray.
- the expression of white to gray means that the wavelength dependence of the light reflection characteristic with respect to visible light is small and the visible light is easily reflected.
- Zinc oxide particles having no catalytic property and high refractive index can be preferably used.
- the surface thereof is made of a metal material.
- the surface is coated with a metal material, as described above, an aspect in which the core particle 1 itself is a metal material, or an aspect in which the surface of the resin particle is coated with a metal material can be given.
- the thickness of the light reflecting layer 3 formed from the inorganic particles 2 is too low with respect to the particle size of the core particle 1. If it is too large, poor conduction will occur. Therefore, it is preferably 0.5 to 50%, more preferably 1 to 25%.
- the thickness is preferably 0.02 to 4 ⁇ m, more preferably 0.1 to 1 ⁇ m, and particularly preferably 0.2 to 0.5 ⁇ m.
- the particle size of the inorganic particles 2 is set so that the light to be reflected (that is, the light emitted from the light emitting element) is not transmitted. It is preferable that it is 50% or more.
- examples of the shape of the inorganic particles 2 include an amorphous shape, a spherical shape, a scaly shape, and a needle shape.
- a spherical shape is preferable from the viewpoint of the light diffusion effect
- a scaly shape is preferable from the viewpoint of the total reflection effect.
- the light-reflective conductive particles 10 in FIG. 1A are formed by a known film forming technique (so-called mechano-fusion method) in which a film composed of small-sized particles is formed on the surface of large-sized particles by physically colliding large and small powders. ).
- the inorganic particles 2 are fixed so as to bite into the metal material on the surface of the core particle 1.
- a monolayer of inorganic particles constitutes the light reflecting layer 3. . Therefore, in the case of FIG. 1A, the layer thickness of the light reflecting layer 3 is considered to be equivalent to or slightly thinner than the particle size of the inorganic particles 2.
- the light reflective conductive particles 20 in FIG. 1B will be described.
- the light-reflecting layer 3 contains a thermoplastic resin 4 that functions as an adhesive
- the inorganic particles 2 are also fixed together by this thermoplastic resin 4, and the inorganic particles 2 are multilayered (for example, It differs from the light-reflective conductive particle 10 of FIG. 1A in that it is multi-layered into two or three layers.
- the mechanical strength of the light reflecting layer 3 is improved, and the inorganic particles 2 are hardly peeled off.
- thermoplastic resin 4 a halogen-free thermoplastic resin can be preferably used for the purpose of low environmental load, and for example, polyolefins such as polyethylene and polypropylene, polystyrene, acrylic resins and the like can be preferably used.
- Such light-reflective conductive particles 20 can also be manufactured by a mechanofusion method. If the particle size of the thermoplastic resin 4 applied to the mechano-fusion method is too small, the adhesion function is lowered, and if it is too large, it is difficult to adhere to the core particle 1, so that it is preferably 0.02 to 4 ⁇ m, more preferably 0.8. 1 to 1 ⁇ m. Further, if the blending amount of the thermoplastic resin 4 is too small, the adhesive function is lowered, and if it is too large, aggregates of light-reflective conductive particles and core particles are formed. The amount is preferably 0.2 to 500 parts by mass, more preferably 4 to 25 parts by mass.
- thermosetting resin composition used for the light-reflective anisotropic conductive adhesive of the present invention it is preferable to use a colorless and transparent one as much as possible. This is because the light-reflecting conductive particles in the light-reflective anisotropic conductive adhesive are reflected without decreasing the light reflection efficiency and without changing the light color of the incident light.
- the colorless and transparent means that the cured product of the thermosetting resin composition has a light transmittance (JIS K7105) of 80% or more, preferably 90% or more with respect to visible light having a wavelength of 380 to 780 nm with an optical path length of 1 cm.
- the amount of conductive particles such as light-reflective conductive particles with respect to 100 parts by mass of the thermosetting resin composition is too small, conduction failure occurs, and if it is too large, a pattern is formed. Since a short circuit tends to occur, the amount is preferably 1 to 100 parts by mass, more preferably 10 to 50 parts by mass.
- the light reflection property of the light reflective anisotropic conductive adhesive of the present invention is such that the light reflectance anisotropic conductive adhesive cured product of the light reflective anisotropic conductive adhesive with respect to light having a wavelength of 450 nm ( It is desirable that JIS K7105) is at least 30%.
- the light reflection characteristics and blending amount of the light reflecting conductive particles to be used, the blending composition of the thermosetting resin composition, and the like may be appropriately adjusted. Usually, if the amount of the light-reflective conductive particles having good light reflection characteristics is increased, the reflectance tends to increase.
- the light reflection characteristics of the light reflective anisotropic conductive adhesive can be evaluated from the viewpoint of refractive index. That is, if the refractive index of the cured product is larger than the refractive index of the cured product of the thermosetting resin composition excluding the conductive particles, light-reflective acicular insulating particles, and light-reflective spherical insulating particles, This is because the amount of light reflection at the interface between the conductive needle-like insulating particles and the light-reflective spherical insulating particles and the cured product of the thermosetting resin composition surrounding them increases.
- the difference obtained by subtracting the refractive index (JIS K7142) of the cured product of the thermosetting resin composition from the refractive index (JIS K7142) of each of the light reflective needle-like insulating particles and the light reflective spherical insulating particles is preferably 0.02 or more, more preferably 0.2 or more.
- the refractive index of a thermosetting resin composition mainly composed of an epoxy resin is about 1.5.
- thermosetting resin composition constituting the light-reflective anisotropic conductive adhesive of the present invention
- those used in conventional anisotropic conductive adhesives and anisotropic conductive films can be used.
- thermosetting resin composition is obtained by blending a curing agent with an insulating binder resin.
- the insulating binder resin is preferably an epoxy resin mainly composed of an alicyclic epoxy compound, a heterocyclic epoxy compound, a hydrogenated epoxy compound, or the like.
- Preferred examples of the alicyclic epoxy compound include those having two or more epoxy groups in the molecule. These may be liquid or solid. Specific examples include glycidyl hexahydrobisphenol A, 3,4-epoxycyclohexenylmethyl-3,4'-epoxycyclohexene carboxylate, and the like. Among these, glycidyl hexahydrobisphenol A, 3,4-epoxycyclohexenylmethyl-3 ′, 4 is preferable because it can ensure light transmission suitable for mounting LED elements on the cured product and is excellent in rapid curing. '-Epoxycyclohexenecarboxylate can be preferably used.
- heterocyclic epoxy compound examples include an epoxy compound having a triazine ring, and 1,3,5-tris (2,3-epoxypropyl) -1,3,5-triazine-2,4 is particularly preferable. , 6- (1H, 3H, 5H) -trione.
- hydrogenated epoxy compound hydrogenated products of the above-described alicyclic epoxy compounds and heterocyclic epoxy compounds, and other known hydrogenated epoxy resins can be used.
- the alicyclic epoxy compound, heterocyclic epoxy compound and hydrogenated epoxy compound may be used alone, but two or more kinds may be used in combination.
- other epoxy compounds may be used in combination as long as the effects of the present invention are not impaired.
- the curing agent examples include acid anhydrides, imidazole compounds, and dicyan.
- an acid anhydride-based curing agent that hardly changes the color of the cured product particularly an alicyclic acid anhydride-based curing agent, can be preferably used.
- methylhexahydrophthalic anhydride etc. can be mentioned preferably.
- thermosetting resin composition of the light-reflective anisotropic conductive adhesive of the present invention when an alicyclic epoxy compound and an alicyclic acid anhydride-based curing agent are used, the respective amounts used are alicyclic. If the amount of the acid anhydride-based curing agent is too small, the amount of the uncured epoxy compound increases, and if the amount is too large, the corrosion of the adherend material tends to be accelerated by the influence of the excess curing agent.
- the alicyclic acid anhydride curing agent is preferably used in an amount of 80 to 120 parts by mass, more preferably 95 to 105 parts by mass with respect to parts by mass.
- the light-reflective anisotropic conductive adhesive of the present invention can be produced by uniformly mixing light-reflective needle-like insulating particles and light-reflective spherical insulating particles, conductive particles, and a thermosetting resin composition. it can.
- the light-reflective anisotropic conductive adhesive of the present invention is used as a light-reflective anisotropic conductive film
- the light-reflective acicular insulating particles, the light-reflective spherical insulating particles, the conductive particles, and the thermosetting property may be dispersed and mixed with a solvent such as toluene, applied to the peeled PET film so as to have a desired thickness, and dried at a temperature of about 80 ° C.
- the light-emitting device 200 includes the connection terminal 22 on the substrate 21 and the connection bumps 26 formed on the n-electrode 24 and the p-electrode 25 of the LED element 23 as light-emitting elements.
- This is a light emitting device in which a light reflective anisotropic conductive adhesive is applied and the substrate 21 and the LED element 23 are flip-chip mounted.
- the cured product 100 of the light-reflective anisotropic conductive adhesive is composed of the light-reflective conductive particles 10, and further the light-reflective needle-like insulating particles and the light-reflective spherical insulating particles made of the thermosetting resin composition. Dispersed in the cured product 11.
- you may seal with transparent mold resin so that the whole LED element 23 may be covered as needed.
- you may provide a light reflection layer in the LED element 23 similarly to the past.
- the light emitting device 200 configured as described above, among the light emitted from the LED elements 23, the light emitted toward the substrate 21 is the light in the cured product 100 of the light-reflective anisotropic conductive adhesive.
- the light is reflected by the reflective conductive particles 10 and emitted from the upper surface of the LED element 23. Accordingly, it is possible to prevent a decrease in luminous efficiency.
- the light-reflective acicular insulating particles are included, the conduction reliability of the cured product of the light-reflective anisotropic conductive adhesive can be improved, and the occurrence of cracks can be suppressed or prevented.
- Configurations other than the light-reflective anisotropic conductive adhesive (the LED element 23, the bump 26, the substrate 21, the connection terminal 22, and the like) in the light-emitting device 200 of the present invention can be the same as the configuration of the conventional light-emitting device. .
- the light emitting device 200 of the present invention can be manufactured by using a conventional anisotropic conductive connection technique except that the light reflective anisotropic conductive adhesive of the present invention is used.
- a well-known light emitting element can be applied in the range which does not impair the effect of this invention other than an LED element.
- Examples 1-7, Comparative Examples 1-4 (Production of anisotropic conductive adhesive) Light-reflecting white needle-like insulating particles (metal oxide whiskers) and / or light-reflecting white spherical insulating particles (metal oxide particles) and conductive particles formed with a gold plating layer on the surface of spherical acrylic resin particles 10 parts by weight of light-reflective conductive particles (average particle diameter 5 ⁇ m) coated with gold-coated resin particles (average particle diameter 5 ⁇ m) or titanium oxide fine particles 50 parts by weight of an alicyclic epoxy compound (CEL2021P, Daicel Corporation) And an epoxy conductive thermosetting resin composition (refractive index: 1.45) containing 50 parts by mass of methylhexahydrophthalic anhydride to prepare an anisotropic conductive adhesive. did.
- the light-reflective conductive particles used in Example 6 were 4 parts by mass of titanium oxide powder having a particle size of 0.5 ⁇ m, 3 parts by mass of polystyrene-based powder having a particle size of 0.2 ⁇ m, and conductive particles having a particle size of 5 ⁇ m (average Mechano-fusion device (AMS-GMP, Hosokawa Micron) with 20 parts by mass of electroless gold plated particles (20 GNR 4.6EH, Nippon Chemical Industry Co., Ltd.) on spherical acrylic resin particles with a particle size of 4.6 ⁇ m And a light reflecting layer made of titanium oxide particles having a thickness of about 1 ⁇ m was formed on the surface of the gold-coated resin particles. The appearance color of the light reflective conductive particles was gray.
- AMS-GMP Average Mechano-fusion device
- electroless gold plated particles (20 GNR 4.6EH, Nippon Chemical Industry Co., Ltd.
- the light-reflective white spherical insulating particles used in Examples 1 and 2 are obtained by coating the surface of TiO 2 having a particle diameter of 0.5 ⁇ m with a Si film and an Al film.
- the light-reflective white needle-like insulating particles used in Example 6 are obtained by surface-treating (silica treatment) the surface of ZnO whiskers with a silicon coupling agent (Panatetra, Amtec Co., Ltd.).
- the produced anisotropic conductive adhesive was applied on a white plate so as to have a thickness of 100 ⁇ m, and was cured by heating at 200 ° C. for 1 minute.
- the total reflectance (specular reflection and diffuse reflection) with respect to the light of wavelength 450nm which used barium sulfate as a standard was measured using the spectrophotometer (UV3100, Shimadzu Corporation Corp.). The obtained results are shown in Table 1. In practice, it is desirable that the light reflectance is more than 30%.
- ⁇ TCT-A> The test LED module was exposed to an atmosphere of ⁇ 40 ° C. and 100 ° C. for 30 minutes each, and 1000 cycles of a cooling / heating cycle were performed.
- ⁇ TCT-B> The test LED module was exposed to an atmosphere of ⁇ 55 ° C. and 125 ° C. for 30 minutes each, and 1000 cycles of cooling and heating cycles were performed with this as one cycle.
- the test LED module taken out from TCT was observed from the upper surface of the blue LED element with a metal microscope, and the light-reflective anisotropic conductive adhesive was Whether or not cracks occurred in the cured product was observed and evaluated according to the following criteria.
- the total amount of the light-reflective insulating particles is the same as that of the anisotropic conductive adhesive of Example 3, but the light-reflective white spherical insulating particles are used. Since only light-reflective white needle-like insulating particles were used without blending, the total reflectance was reduced from 42% (Example 3) to 35%, and the total luminous flux was also reduced from 360 mlm (Example 3) to 300 mlm. did.
- the total blending amount of the light reflective insulating particles is the same as that of the anisotropic conductive adhesive of Example 3, but the light reflective white needle-like insulating particles are blended. Since only the light-reflective white spherical insulating particles were used, the total reflectance was improved from 42% (Example 3) to 50%, but the crack resistance was evaluated as “C”, and the conduction reliability was improved. In the case of TCT-B, the evaluation was “B”.
- the light-reflective anisotropic conductive adhesive of the present invention contains light-reflective needle-like insulating particles and spherical insulating particles in an amount of 1 to 50% by volume with respect to the thermosetting resin composition, respectively.
- the mixing ratio of the spherical insulating particles to the light-reflecting needle-like insulating particles is set to 1: 1 to 10. For this reason, it is possible to improve the light emission efficiency without providing a light reflection layer on the LED element that causes an increase in manufacturing cost, and to reduce the conduction reliability that occurs in the anisotropic conductive connection portion of the light emitting device due to a change in environmental temperature. And the generation of cracks can be suppressed or prevented. Therefore, the light-reflective anisotropic conductive adhesive of the present invention is useful when the LED element is flip-lip mounted.
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Abstract
Description
該熱硬化性樹脂組成物における光反射性針状絶縁粒子並びに光反射性球状絶縁粒子の配合量が、熱硬化性樹脂組成物に対してそれぞれ1~50体積%であり、且つ光反射性球状絶縁粒子の光反射性針状絶縁粒子に対する配合比(V/V)が1:1~10である光反射性異方性導電接着剤を提供する。
(異方性導電接着剤の作製)
光反射性白色針状絶縁粒子(金属酸化物ウィスカ)及び/または光反射性白色球状絶縁粒子(金属酸化物粒子)と、導電粒子として、球状のアクリル樹脂粒子の表面に金メッキ層が形成された金被覆樹脂粒子(平均粒径5μm)または酸化チタン微粒子で被覆された光反射性導電粒子(平均粒径5μm)10質量部を、脂環式エポキシ化合物(CEL2021P、(株)ダイセル)50質量部とメチルヘキサヒドロ無水フタル酸50質量部とを含有する透明なエポキシ系熱硬化性樹脂組成物(屈折率1.45)に、表1の添加量で混合し、異方性導電接着剤を調製した。
作製した異方性導電接着剤を白色板上に厚さ100μmとなるように塗布し、200℃で1分間加熱して硬化させた。得られた硬化物について、分光光度計(UV3100、(株)島津製作所)を用いて硫酸バリウムを標準とした波長450nmの光に対する全反射率(鏡面反射及び拡散反射)を測定した。得られた結果を表1に示す。実用上、光反射率は30%超であることが望ましい。
100μmピッチの銅配線にNi/Au(5.0μm厚/0.3μm厚)メッキ処理した配線を有するガラスエポキシ基板に、バンプホルダ(FB700、(株)カイジョー)を用いて15μm高の金(Au)バンプを形成した。この金バンプ付きエポキシ基板に、光反射性異方性導電接着剤を用いて、青色LED(Vf=3.2V(If=20mA))素子を200℃、20秒、1kg/チップの条件でフリップチップ実装し、テスト用LEDモジュールを得た。
得られたテスト用LEDモジュールについて、全光束量測定システム(積分全球)(LE-2100、大塚電子(株))を用いて全光束量を測定した(測定条件 If=20mA(定電流制御))。得られた結果を表1に示す。実用上、全光束量は、300mlm超であることが望まれる。
導通信頼性及び耐クラック性について、以下の2種類の冷熱サイクル試験(TCT)を行うことにより評価した。
テスト用LEDモジュールを、-40℃及び100℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行った。
<TCT-B>
テスト用LEDモジュールを、-55℃及び125℃の雰囲気に各30分間曝し、これを1サイクルとする冷熱サイクルを1000サイクル行った。
A: 初期Vf値からのVf値の上昇分が3%未満である場合
B: 初期Vf値からのVf値の上昇分が3%以上5%未満である場合
C: 初期Vf値からのVf値の上昇分が5%以上である場合
A: クラックの発生が全く観察されない場合
B: クラックの発生が僅かに観察されるが、実用上問題のないレベルである場合
C: クラックの発生が観察される場合
2 無機粒子
3、40 光反射層
4 熱可塑性樹脂
10、20 光反射性導電粒子
11 熱硬化性樹脂組成物の硬化物
21、31 基板
22、36 接続端子
23、33 LED素子
24、35 n電極
25、34 p電極
26、39 バンプ
32 ダイボンド接着剤
37 金ワイヤ
38 透明モールド樹脂
41 異方性導電ペースト(ACP)
100 光反射性異方性導電接着剤の硬化物
200 発光装置
Claims (16)
- 発光素子を配線板に異方性導電接続するために使用する光反射性異方性導電接着剤であって、熱硬化性樹脂組成物、導電粒子、光反射性針状絶縁粒子及び光反射性球状絶縁粒子を含有し、
該熱硬化性樹脂組成物における光反射性針状絶縁粒子並びに光反射性球状絶縁粒子の配合量が、熱硬化性樹脂組成物に対してそれぞれ1~50体積%であり、且つ光反射性球状絶縁粒子の光反射性針状絶縁粒子に対する配合比(V/V)が1:1~10である光反射性異方性導電接着剤。 - 該光反射性針状絶縁粒子が、酸化チタンウィスカ、酸化亜鉛ウィスカ、チタン酸塩ウィスカ、ホウ酸アルミニウムウィスカ及びウォラストナイトからなる群より選択される少なくとも一種の針状無機粒子である請求項1記載の光反射性異方性導電接着剤。
- 該光反射性針状無機粒子が酸化亜鉛ウィスカである請求項2記載の光反射性異方性導電接着剤。
- 該光反射性針状絶縁粒子が、針状無機粒子をシランカップリング剤で処理したものである請求項1~3のいずれかに記載の光反射性異方性導電接着剤。
- 該光反射性針状絶縁粒子のアスペクト比が、10よりも大きく35未満であることを特徴とする請求項1~4のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性針状絶縁粒子の屈折率(JIS K7142)が、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きい請求項1~5のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子が、酸化チタン、窒化ホウ素、酸化亜鉛及び酸化アルミニウムからなる群より選択される少なくとも一種の球状無機粒子である請求項1~6のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子の平均粒径が、0.02~20μmである請求項7記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子の屈折率(JIS K7142)が、熱硬化性樹脂組成物の硬化物の屈折率(JIS K7142)よりも大きい請求項1~7のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子が、球状金属粒子の表面を絶縁性樹脂で被覆した樹脂被覆金属粒子である請求項1~6のいずれかに記載の光反射性異方性導電接着剤。
- 光反射性球状絶縁粒子が、球状銀粒子の表面を絶縁性樹脂で被覆した樹脂被覆銀粒子である請求項10記載の光反射性異方性導電接着剤。
- 熱硬化性樹脂組成物が、エポキシ樹脂と酸無水物系硬化剤とを含有する請求項1~11のいずれかに記載の光反射性異方性導電接着剤。
- 導電粒子が、金属材料で被覆されているコア粒子と、その表面に酸化チタン粒子、酸化亜鉛粒子又は酸化アルミニウム粒子から選択された少なくとも一種の無機粒子から形成された光反射層とからなる光反射性導電粒子である請求項1~12のいずれかに記載の光反射性異方性導電接着剤。
- 熱硬化性樹脂組成物100質量部に対する光反射性導電粒子の配合量が、1~100質量部である請求項1~13のいずれかに記載の光反射性異方性導電接着剤。
- 請求項1~14のいずれかに記載の光反射性異方性導電接着剤を介して、発光素子がフリップチップ方式で配線板に実装されている発光装置。
- 発光素子が、発光ダイオードである請求項15記載の発光装置。
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EP12755243.8A EP2685513B1 (en) | 2011-03-07 | 2012-02-23 | Light-reflective anisotropic conductive adhesive and light-emitting device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013104195A1 (de) * | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
CN105531835A (zh) * | 2013-09-13 | 2016-04-27 | 欧司朗光电半导体有限公司 | 光电子半导体组件和用于制造光电子半导体组件的方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5617210B2 (ja) * | 2009-09-14 | 2014-11-05 | デクセリアルズ株式会社 | 光反射性異方性導電接着剤及び発光装置 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11168235A (ja) | 1997-12-05 | 1999-06-22 | Toyoda Gosei Co Ltd | 発光ダイオード |
JPH11343465A (ja) * | 1998-06-01 | 1999-12-14 | Fujitsu Ltd | 接着剤、接着方法及び実装基板の組み立て体 |
JP2001332124A (ja) * | 2000-05-22 | 2001-11-30 | Toshiba Chem Corp | 導電性ペーストおよび光半導体装置 |
JP2008192880A (ja) * | 2007-02-06 | 2008-08-21 | Nichia Chem Ind Ltd | 発光装置及びその製造方法並びに発光装置用成形体 |
JP2010225597A (ja) * | 2009-02-27 | 2010-10-07 | Sony Chemical & Information Device Corp | 異方性導電フィルム及び発光装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5183594A (en) * | 1988-08-29 | 1993-02-02 | Matsushita Electric Industrial Co., Ltd. | Conductive resin composition containing zinc oxide whiskers having a tetrapod structure |
JP3637277B2 (ja) * | 2000-03-21 | 2005-04-13 | 大塚化学ホールディングス株式会社 | 難燃剤、及び難燃性樹脂組成物、及び成形物、及び電子部品 |
US20050228097A1 (en) * | 2004-03-30 | 2005-10-13 | General Electric Company | Thermally conductive compositions and methods of making thereof |
CN101583670B (zh) * | 2006-10-31 | 2012-04-11 | 大科能树脂有限公司 | 散热性树脂组合物、led实装用基板、反射器以及具有反射器部的led实装用基板 |
JP2009197185A (ja) * | 2008-02-25 | 2009-09-03 | Hitachi Chem Co Ltd | 透明熱伝導接着フィルム及びその用途 |
JP5422921B2 (ja) * | 2008-05-28 | 2014-02-19 | デクセリアルズ株式会社 | 接着フィルム |
JP5126175B2 (ja) * | 2009-07-27 | 2013-01-23 | 住友ベークライト株式会社 | 金属含有ペーストおよび半導体装置 |
JP5914987B2 (ja) * | 2010-06-09 | 2016-05-11 | デクセリアルズ株式会社 | 光反射性異方性導電ペースト及び発光装置 |
-
2011
- 2011-03-07 JP JP2011048625A patent/JP5609716B2/ja active Active
-
2012
- 2012-02-23 US US13/995,033 patent/US20130264602A1/en not_active Abandoned
- 2012-02-23 CN CN201280011864.2A patent/CN103403896B/zh active Active
- 2012-02-23 KR KR1020137023354A patent/KR101911564B1/ko active IP Right Grant
- 2012-02-23 WO PCT/JP2012/054411 patent/WO2012121021A1/ja active Application Filing
- 2012-02-23 EP EP12755243.8A patent/EP2685513B1/en active Active
- 2012-02-29 TW TW101106490A patent/TWI553088B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11168235A (ja) | 1997-12-05 | 1999-06-22 | Toyoda Gosei Co Ltd | 発光ダイオード |
JPH11343465A (ja) * | 1998-06-01 | 1999-12-14 | Fujitsu Ltd | 接着剤、接着方法及び実装基板の組み立て体 |
JP2001332124A (ja) * | 2000-05-22 | 2001-11-30 | Toshiba Chem Corp | 導電性ペーストおよび光半導体装置 |
JP2008192880A (ja) * | 2007-02-06 | 2008-08-21 | Nichia Chem Ind Ltd | 発光装置及びその製造方法並びに発光装置用成形体 |
JP2010225597A (ja) * | 2009-02-27 | 2010-10-07 | Sony Chemical & Information Device Corp | 異方性導電フィルム及び発光装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2685513A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013104195A1 (de) * | 2013-04-25 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
US9620674B2 (en) | 2013-04-25 | 2017-04-11 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof |
CN105531835A (zh) * | 2013-09-13 | 2016-04-27 | 欧司朗光电半导体有限公司 | 光电子半导体组件和用于制造光电子半导体组件的方法 |
US20160218261A1 (en) * | 2013-09-13 | 2016-07-28 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and method of fabricating an optoelectronic semiconductor component |
CN105531835B (zh) * | 2013-09-13 | 2018-11-23 | 欧司朗光电半导体有限公司 | 光电子半导体组件和用于制造光电子半导体组件的方法 |
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CN103403896B (zh) | 2016-10-05 |
EP2685513A4 (en) | 2014-12-31 |
KR101911564B1 (ko) | 2018-10-24 |
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