TWI553088B - A light reflective anisotropic conductive adhesive and a light emitting device - Google Patents

A light reflective anisotropic conductive adhesive and a light emitting device Download PDF

Info

Publication number
TWI553088B
TWI553088B TW101106490A TW101106490A TWI553088B TW I553088 B TWI553088 B TW I553088B TW 101106490 A TW101106490 A TW 101106490A TW 101106490 A TW101106490 A TW 101106490A TW I553088 B TWI553088 B TW I553088B
Authority
TW
Taiwan
Prior art keywords
light
reflective
particles
anisotropic conductive
conductive adhesive
Prior art date
Application number
TW101106490A
Other languages
English (en)
Other versions
TW201241145A (en
Inventor
Hidetsugu Namiki
Shiyuki Kanisawa
Hideaki Umakoshi
Akira Ishigami
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201241145A publication Critical patent/TW201241145A/zh
Application granted granted Critical
Publication of TWI553088B publication Critical patent/TWI553088B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Description

光反射性異向性導電接著劑及發光裝置
本發明係關於一種用以將發光元件異向性導電連接於配線板之光反射性異向性導電接著劑、及使用該接著劑將發光元件構裝於配線板而成之發光裝置。
使用發光二極體(LED)元件之發光裝置被廣泛使用，舊式發光裝置的結構如圖3所示，係使用固晶接著劑32將LED元件33接合於基板31上，並使用金導線37將LED元件33上面的p電極34與n電極35打線接合於基板31的連接端子36，然後以透明模具樹脂(mold resin)38將LED元件33整體密封起來。然而，圖3之發光裝置的情形，有下述問題：LED元件33發出的光中，金導線會吸收射出於上面側之400~500nm之波長的光，且射出於下面側之光的一部份會被固晶接著劑32吸收，而使得LED元件33的發光效率下降。
因此，如圖4所示，曾提出將LED元件33覆晶構裝的技術(專利文獻1)。於此覆晶構裝技術中，凸塊39各別形成在p電極34與n電極35，並且在LED元件33的凸塊形成面，以p電極34與n電極35絕緣的方式設置有光反射層40。接著，使用以環氧樹脂作為黏合劑樹脂之異向性導電糊(ACP)41或異向性導電膜(ACF)(未圖示)，使其等硬化而將LED元件33與基板31連接固定。因此，於圖4之發光裝置中，朝LED元件33上方射出之光不會被金 導線吸收，而朝下方射出之光幾乎會被光反射層40反射而朝上方射出，因此不會使得發光效率(光取出效率)下降。
專利文獻1：日本特開平11-168235號公報
然而，專利文獻1之技術，必須藉由金屬蒸鍍法等將光反射層40以p電極34與n電極35絕緣的方式設置於LED元件33，在製造上，會有無法避免成本增加的問題。
另一方面，當不設置光反射層40的情形時，亦有下述問題：硬化之ACP及ACF中以金、鎳或銅被覆之導電粒子的表面呈現褐色或暗褐色，且分散有導電粒子之環氧樹脂黏合劑本身亦因為常用於其硬化之咪唑系潛伏性硬化劑的關係而呈褐色，從而難以提升發光元件發光的發光效率(光取出效率)。
又，除了以上說明的問題(成本增加問題及光取出效率的問題)之外，更大的問題是在異向性導電連接部會發生裂痕及會有傳導可靠性下降的問題。亦即，當為藉由此種ACP或ACF將LED元件33與基板31異向性導電連接而得之發光裝置時，由於使用熱線膨脹係數高於基板31之熱線膨脹係數的環氧樹脂作為ACP或ACF的黏合劑樹脂，故會隨著發光裝置的環境溫度變化(例如，無鉛焊料之對應回焊處理、熱衝撃測試、於高溫環境中使用、儲存等時之溫度變化)，在固定於基板之ACP或ACF的硬化物發生內部應力，而有異向性導電連接部發生裂痕、或傳導可靠性下降的問題。
本發明之目的在於解決以上先前技術的問題，當使用異向性導電接著劑將發光二極體(LED)元件等發光元件覆晶構裝於配線板來製造發光裝置時，即使不在LED元件設置會導致製造成本增加的光反射層，亦可改善發光效率，而且可抑制或防止因環境溫度變化造成在發光裝置的異向性導電連接部發生的傳導可靠性下降或裂痕的發生。
本發明人等在若使異向性導電接著劑本身具有光反射功能則可使發光效率不會下降的假定下，發現(a)藉由在異向性導電接著劑摻合光反射性絕緣粒子，可使發光元件的發光效率不會下降、(b)該情形時，相較於針狀光反射性絕緣粒子，球狀光反射性絕緣粒子使發光效率不會下降的能力較高、(c)另一方面，相較於球狀光反射性絕緣粒子，針狀光反射性絕緣粒子對於抑制異向性導電連接部之傳導可靠性的下降與發生裂痕較為有效、(d)因此，為了兼顧提升發光元件之發光效率與抑制或防止傳導可靠性下降及發生裂痕，應使光反射性針狀絕緣粒子與光反射性球狀絕緣粒子為特定之摻合比例，從而完成本發明。
亦即，本發明提供一種光反射性異向性導電接著劑，用以將發光元件異向性導電連接於配線板，該光反射性異向性導電接著劑含有熱硬化性樹脂組成物、導電粒子、光反射性針狀絕緣粒子及光反射性球狀絕緣粒子，
該熱硬化性樹脂組成物中之光反射性針狀絕緣粒子及光反射性球狀絕緣粒子的摻合量相對於熱硬化性樹脂組成物，分別為1~50體積%，且光反射性球狀絕緣粒子相對 於光反射性針狀絕緣粒子的摻合比(V/V)為1：1~10。
又，本發明提供一種藉由該光反射性異向性導電接著劑將發光元件以覆晶方式構裝於配線板的發光裝置。
於本發明之光反射性異向性導電接著劑中，分別以相對於熱硬化性樹脂組成物為1~50體積%摻合光反射性之針狀絕緣粒子與球狀絕緣粒子，且將光反射性球狀絕緣粒子相對於光反射性針狀絕緣粒子的摻合比(V/V)設定為1：1~10。因此，即使不在LED元件設置會導致製造成本增加的光反射層，亦可改善發光效率，而且可抑制或防止因環境溫度變化造成在發光裝置的異向性導電連接部發生的傳導可靠性下降或裂痕的發生。
本發明之光反射性異向性導電接著劑係用以將發光元件異向性導電連接於配線板者，含有熱硬化性樹脂組成物、導電粒子、光反射性針狀絕緣粒子及光反射性球狀絕緣粒子。
於本發明中，合併使用光反射性針狀絕緣粒子與光反射性球狀絕緣粒子作為光反射性絕緣粒子的理由如下。
一般而言，熱硬化性樹脂組成物含有光反射性絕緣粒子時，若樹脂組成物的伸縮性隨著溫度變化下降(變硬)，則會因為熱硬化性樹脂組成物(或其硬化物)的內部應力而導致在光反射性絕緣粒子與熱硬化性樹脂組成物的界面容易發生裂痕。若光反射性異向性導電接著劑發生裂痕，則會損及傳導可靠性。因此，光反射性異向性導電接著劑 必須具有優異的強靭性，而可藉由在熱硬化性樹脂組成物添加作為光反射性絕緣粒子的光反射性針狀絕緣粒子，來對光反射性異向性導電接著劑賦予高強靭性。其原因在於：於熱硬化性樹脂組成物中，各別被配置在任意方向的針狀光反射性絕緣粒子由於其本身易撓曲而且易彎折，因此可將隨溫度變化之熱硬化性樹脂組成物的內部應力傳遞及吸收於針狀結晶中，而可抑制此內部應力傳播於熱硬化性樹脂組成物。因此，含有光反射性針狀絕緣粒子的光反射性異向性導電接著劑可發揮優異的強靭性，即使熱硬化性樹脂組成物因溫度變化而產生伸縮，亦可抑制或防止裂痕的發生，且可抑制或防止傳導可靠性下降。
另一方面，僅使用光反射性針狀絕緣粒子作為光反射性絕緣粒子時，光反射率會有下降的傾向。因此，於本發明中，與光反射性針狀絕緣粒子合併使用具有良好光反射特性之球狀光反射性絕緣粒子。
此種光反射性針狀絕緣粒子在熱硬化性樹脂組成物中的摻合量，相對於熱硬化性樹脂組成物，為1~50體積%，較佳為5~25體積%。其原因在於，若光反射性針狀絕緣粒子的摻合量未達1體積%，則會有難以充分抑制或防止以光反射性異向性導電接著劑接合之接合部發生裂痕及傳導可靠性下降的傾向，若光反射性針狀絕緣粒子的摻合量過多，則會有下述傾向：相對地熱硬化性樹脂組成物的摻合量減少，光反射性異向性導電接著劑的接著性下降，且光反射性球狀絕緣粒子的摻合量亦減少，以光反射性異向 性導電接著劑接合之接合部的光反射率的改善變得不夠充分，故若在此範圍，則可得到本發明之效果。
又，光反射性球狀絕緣粒子在熱硬化性樹脂組成物中的摻合量，相對於熱硬化性樹脂組成物，為1~50體積%，較佳為2~25體積%。其原因在於，若光反射性球狀絕緣粒子的摻合量未達1體積%，則會有以光反射性異向性導電接著劑接合之接合部的光反射率的改善不夠充分之傾向，若光反射性球狀絕緣粒子的摻合量過多，則會有下述傾向：相對地熱硬化性樹脂組成物的摻合量減少，光反射性異向性導電接著劑的接著性下降，且光反射性針狀絕緣粒子的摻合量亦減少，變得不易抑制以光反射性異向性導電接著劑接合之接合部發生裂痕，而難以改善傳導可靠性下降，故若在此範圍，則可得到本發明之效果。
又，光反射性球狀絕緣粒子相對於光反射性針狀絕緣粒子的摻合比(V/V)為1：1~10，較佳為1：2~8。其原因在於，當光反射性球狀絕緣粒子的摻合量在此範圍外，相對較光反射性針狀絕緣粒子少時，光反射特性會有下降的傾向，相反地當相對較多時，則耐裂痕特性會有下降的傾向。
光反射性針狀絕緣粒子應用於發出可見光之發光裝置時，較佳使用呈白色之針狀無機化合物。此種光反射性針狀絕緣粒子由於會將入射於光反射性異向性導電接著劑之光反射至外部，而且光反射性針狀絕緣粒子本身呈白色，因此可減小對可見光之光反射特性的波長依存性，可有效 率地反射可見光。
又，光反射性針狀絕緣粒子之徑較佳在5μm以下。又，為了充分傳遞及吸收熱硬化性樹脂組成物的內部應力，其長寬比(aspect ratio)較佳為大於10，且為了使光反射性針狀絕緣粒子不易折斷而且均勻地分散於熱硬化性樹脂組成物中，較佳為未達35。為了進一步提升在熱硬化性樹脂組成物中的分散性，更佳為未達20。
此種光反射性針狀絕緣粒子的較佳具體例，可列舉氧化鋅晶鬚(whisker)、氧化鈦晶鬚、鈦酸鉀晶鬚或鈦酸鈉晶鬚等鈦酸鹽晶鬚、硼酸鋁晶鬚、矽灰石(高嶺土矽酸鹽之針狀結晶)等之白色針狀無機粒子。此等可使用一種或二種以上。此處，晶鬚係藉由特殊製法而成長為針狀的結晶，由於結晶構造井然有序，因此富有彈性，具有不易變形的優點。此等之無機化合物於發出可見光的發光裝置中，由於呈白色，因此對可見光之光反射特性的波長依存性小，且易於反射可見光。其中，氧化鋅晶鬚由於白色度高，且即使是擔心硬化後之異向性導電接著劑中之熱硬化性樹脂組成物硬化物的光劣化的情形，對於光劣化亦無催化性，故特佳。
另，光反射性針狀絕緣粒子，例如亦可使用如tetrapod(註冊商標)般分別連結四面體之中心部與頂點而成之形狀等具有複數根針狀形狀的結晶(複針狀結晶)，來代替上述單針狀結晶。複針狀結晶之白色針狀無機粒子，相較於單針狀結晶之白色針狀無機粒子，雖然導熱性較大，而 較為優異，但是由於結晶構造之體積大於單針狀結晶，因此在熱壓接時必須注意不要讓針狀部分損傷到基板或元件的接合零件。
又，此等之光反射性針狀絕緣粒子亦可為例如經矽烷偶合劑處理過者。若以矽烷偶合劑來處理無機粒子，則可提升其在熱硬化性樹脂組成物中的分散性。因此，可在短時間內將針狀無機粒子(較佳為氧化鋅晶鬚經矽烷偶合劑處理而得之光反射性針狀絕緣粒子)均勻地混合於熱硬化性樹脂組成物中。
光反射性針狀絕緣粒子的折射率(JIS K7142)較佳為大於熱硬化性樹脂組成物之硬化物的折射率(JIS K7142)，更佳為至少大0.02程度。其原因在於：若折射率之差小，則於其等之界面的光反射效率會下降。
於光反射性異向性導電接著劑中，與光反射性針狀絕緣粒子併用的光反射性球狀絕緣粒子，當應用於發出可見光之發光裝置時，較佳使用呈白色的球狀無機化合物。此種光反射性球狀絕緣粒子由於會將入射於光反射性異向性導電接著劑之光反射至外部，而且光反射性球狀絕緣粒子本身呈白色，因此可減小對可見光之光反射特性的波長依存性，可有效率地反射可見光。
又，光反射性球狀絕緣粒子的平均粒徑若過小，則光反射性異向性導電接著劑之硬化物的光反射率會變低，若過大，則由於會有妨礙導電粒子之異向性導電連接的傾向，因此較佳為0.02~20μm，更佳為0.2~1μm。
此種光反射性球狀絕緣粒子較佳的具體例，可舉選自由氧化鈦(TiO2)、氮化硼(BN)、氧化鋅(ZnO)及氧化鋁(Al2O3)構成之群中的至少一種無機粒子。其中，從高折射率的觀點，較佳使用TiO2。又，在此等的表面，視需要亦可藉由一般方法形成Si與Al塗層。
光反射性球狀絕緣粒子的折射率(JIS K7142)較佳為大於熱硬化性樹脂組成物之硬化物的折射率(JIS K7142)，更佳為至少大0.02程度。其原因在於：若折射率之差小，則於其等之界面的光反射效率會下降。
又，光反射性球狀絕緣粒子可使用球狀金屬粒子之表面以透明絕緣性樹脂包覆的樹脂包覆金屬粒子。球狀金屬粒子的金屬材料可列舉鎳、銀、鋁等，其中，以銀為較佳。
作為光反射性球狀絕緣粒子之樹脂包覆金屬粒子的平均粒徑，雖然根據形狀而有所不同，但通常若過大，則會有妨礙導電粒子之異向性導電連接之虞，若過小，則由於難以將光反射，因此較佳為0.1~30μm，更佳為0.2~10μm。此處，樹脂包覆金屬粒子的平均粒徑為亦包含絕緣包覆在內的大小。
作為此種光反射性球狀絕緣粒子之樹脂包覆金屬粒子中的該樹脂，可使用各種絕緣性樹脂。從機械強度及透明性等觀點，可較佳地利用丙烯酸系樹脂的硬化物。較佳可舉出下述樹脂：在過氧化苯甲醯等有機過氧化物等之自由基(radical)聚合起始劑的存在下，使甲基丙烯酸甲酯與甲基丙烯酸2-羥乙酯進行自由基共聚而成的樹脂。此情形 時，更佳為以2,4-二異氰酸甲苯酯等之異氰酸酯系交聯劑來進行交聯。又，作為金屬粒子，較佳為預先用矽烷偶合劑將γ-環氧丙氧基或乙烯基等導入金屬表面。
此種樹脂包覆金屬粒子，例如可藉由下述方式來進行製造：將金屬粒子與矽烷偶合劑投入甲苯等之溶劑中，於室溫攪拌約1小時後，投入自由基單體與自由基聚合起始劑，並視需要投入交聯劑，一邊加溫至自由基聚合開始溫度，一邊進行攪拌。
構成本發明之光反射性異向性導電接著劑之導電粒子，可利用異向性導電連接用之以往導電性粒子所使用之金屬的粒子。例如可列舉金、鎳、銅、銀、焊錫、鈀、鋁、該等之合金、該等之多層化物(例如，鍍鎳/金快速鍍敷(gold flash plating)物)等。其中，由於金、鎳、銅會使導電粒子呈褐色，因此較其他金屬材料更能獲得本發明之效果。
又，可使用以金屬材料包覆樹脂粒子的金屬包覆樹脂粒子作為導電粒子。此種樹脂粒子，可列舉苯乙烯系樹脂粒子、苯代三聚氰胺(benzoguanamine)樹脂粒子、尼龍樹脂粒子等。而以金屬材料包覆樹脂粒子之方法，亦可採用以往公知之方法，可利用無電電鍍法、電鍍法等。又，包覆之金屬材料的層厚，為能夠確保良好傳導可靠性的厚度，雖然亦會取決於樹脂粒子之粒徑或金屬之種類，但通常為0.1~3μm。
又，樹脂粒子之平均粒徑若過小，則會產生傳導不良， 若過大，則會有於圖案間發生短路的傾向，因此較佳為1~20μm，更佳為3~10μm，特佳為3~5μm。此時，核心粒子1之形狀較佳為球形，但亦可為片狀、橄欖球(rugby ball)狀。
較佳之金屬包覆樹脂粒子為球狀形狀，其粒徑若過大，則傳導可靠性會降低，因此較佳為1~20μm，更佳為3~10μm。
尤其是在本發明中，較佳為對如上述之導電粒子賦予光反射性，製成光反射性導電粒子。圖1A、圖1B為此種光反射性導電粒子10、20的剖面圖。首先，從圖1A的光反射性導電粒子說明。
光反射性導電粒子10，係由被金屬材料包覆之核心粒子1、與無機粒子2形成於該核心粒子1之表面而成的光反射層3構成，其中該無機粒子2係選自氧化鈦(TiO2)粒子、氧化鋅(ZnO)粒子或氧化鋁(Al2O3)粒子中的至少一種。氧化鈦粒子、氧化鋅粒子或氧化鋁粒子係在太陽光下呈白色的無機粒子。因此，由此等形成之光反射層3會呈現白色~灰色。呈現白色~灰色意指對可見光之光反射特性的波長依存性小，且容易反射可見光。
另，氧化鈦粒子、氧化鋅粒子或氧化鋁粒子之中，在會擔心硬化後之異向性導電接著劑的熱硬化性樹脂組成物硬化物發生光劣化之情形時，可較佳使用對光劣化無催化性且折射率亦高的氧化鋅粒子。
核心粒子1係用於異向性導電連接，因此其表面係由 金屬材料構成。此處，表面以金屬材料包覆的態樣，如前述，可列舉核心粒子1本身為金屬材料的態樣，或者樹脂粒子之表面被金屬材料包覆的態樣。
由無機粒子2形成之光反射層3的層厚，若從與核心粒子1之粒徑的相對大小之觀點來看，則相對於核心粒子1之粒徑，若過小則反射率會顯著降低，若過大則會發生傳導不良，因此，光反射層3的層厚較佳為0.5~50%，更佳為1~25%。
又，於光反射性導電粒子10中，構成光反射層3之無機粒子2的粒徑若過小，則會難以產生光反射現象，若過大，則有難以形成光反射層3的傾向，因此，無機粒子2的粒徑較佳為0.02~4μm，更佳為0.1~1μm，特佳為0.2~0.5μm。於此情形時，若從反射光之光波長的觀點來看，則為了使應反射之光(亦即，發光元件所發出之光)不會穿透，無機粒子2之粒徑較佳為該光之波長的50%以上。於此情形時，無機粒子2之形狀可列舉無定型、球狀、鱗片狀、針狀等，其中，就光擴散效果之方面而言，較佳為球狀，就總反射效果之方面而言，較佳為鱗片狀之形狀。
圖1A之光反射性導電性粒子10可藉由公知之成膜技術(所謂機械融合(Mechanofusion)法)來製造，即藉由使大小之粉末彼此發生物理性碰撞而於大粒徑粒子之表面形成由小粒子構成之膜。於此情形時，無機粒子2係以陷入核心粒子1之表面的金屬材料之方式被加以固定，另一方面，由於無機粒子2彼此難以被熔接固定，因此無機粒 子之單層便構成光反射層3。因此，圖1A之情形，可認為光反射層3之層厚與無機粒子2之粒徑相等或略薄於無機粒子2之粒徑。
接著，說明圖1B之光反射性導電粒子20。於此光反射性導電粒子20中，光反射層3含有功能為作為接著劑之熱塑性樹脂4，無機粒子2彼此亦藉由此熱塑性樹脂4固定，於無機粒子2多層化(例如多層化為2層或3層)之點，係與圖1A之光反射性導電粒子10不同。藉由含有此種熱塑性樹脂4，可使光反射層3之機械強度提升，不易發生無機粒子2之脫落等。
為了減輕環境負荷而可較佳使用無鹵素之熱塑性樹脂，來作為熱塑性樹脂4，例如，可較佳使用聚乙烯、聚丙烯等聚烯或聚苯乙烯、丙烯酸樹脂等。
此種光反射性導電粒子20亦可藉由機械融合法進行製造。適用於機械融合法之熱塑性樹脂4的粒徑，若過小則接著功能會降低，若過大則會變得難以附著於核心粒子1，因此較佳為0.02~4μm，更佳為0.1~1μm。又，此種熱塑性樹脂4之摻合量，若過少則接著功能會降低，若過多則會形成光反射性導電粒子或核心粒子之凝聚體，因此相對於無機粒子2之100質量份，較佳為0.2~500質量份，更佳為4~25質量份。
使用於本發明之光反射性異向性導電接著劑的熱硬化性樹脂組成物，較佳為儘量使用無色透明者。原因在於：不會使光反射性異向性導電接著劑中之光反射性導電粒子 的光反射效率降低，並且在不會改變入射光之光色下使其反射。此處，所謂無色透明，係指熱硬化性樹脂組成物之硬化物對於波長380~780nm之可見光，光程長度1cm之透光率(JIS K7105)為80%以上，較佳為90%以上。
於本發明之光反射性異向性導電接著劑中，光反射性導電粒子等導電粒子相對於熱硬化性樹脂組成物100質量份的摻合量，若過少則會產生傳導不良，若過多則會有在圖案間發生短路之傾向，因此較佳為1~100質量份，更佳為10~50質量份。
本發明之光反射性異向性導電接著劑的光反射特性，為了提升發光元件的發光效率，光反射性異向性導電接著劑之硬化物對於波長450nm之光的反射率(JIS K7105)宜至少為30%。為了形成此種光反射率，可適當調整所使用之光反射性導電粒子的光反射特性或摻合量、熱硬化性樹脂組成物的摻合組成等。通常，若增加光反射特性良好之光反射性導電粒子的摻合量，則反射率亦會有增大的傾向。
又，光反射性異向性導電接著劑之光反射特性亦可從折射率的觀點來加以評價。亦即，原因在於，若該硬化物的折射率大於不包含導電粒子、光反射性針狀絕緣粒子與光反射性球狀絕緣粒子之熱硬化性樹脂組成物的硬化物的折射率，則在光反射性針狀絕緣粒子及光反射性球狀絕緣粒子與包圍其之熱硬化性樹脂組成物之硬化物的界面的光反射量會增大。具體而言，較理想的是自光反射性針狀絕緣粒子與光反射性球狀絕緣粒子各別的折射率(JIS K7142) 減去熱硬化性樹脂組成物之硬化物的折射率(JIS K7142)所得之差較佳在0.02以上，更佳在0.2以上。另，通常，以環氧樹脂為主體之熱硬化性樹脂組成物的折射率約為1.5。
構成本發明之光反射性異向性導電接著劑的熱硬化性樹脂組成物，可利用以往異向性導電接著劑或異向性導電膜所使用者。一般而言，此種熱硬化性樹脂組成物係於絕緣性黏合樹脂摻合有硬化劑者。絕緣性黏合樹脂較佳可列舉以脂環族環氧化合物或雜環系環氧化合物或氫化環氧化合物等為主成分的環氧系樹脂。
脂環族環氧化合物較佳可列舉分子內具有2個以上之環氧基者。該等可為液態，或亦可為固體狀。具體而言，可列舉環氧丙基六氫雙酚A、3,4-環氧環己烯基甲基-3,4'-環氧環己烯羧酸酯等。其中，從可確保適於硬化物構裝LED元件等之透光性且速硬化性亦優異的觀點，較佳可使用環氧丙基六氫雙酚A、3,4-環氧環己烯基甲基-3',4'-環氧環己烯羧酸酯。
雜環系環氧化合物，可列舉具有三環的環氧化合物，特佳可列舉1,3,5-參(2,3-環氧丙基)-1,3,5-三-2,4,6-(1H,3H,5H)-三酮。
氫化環氧化合物，可使用上述脂環族環氣化合物或雜環系環氧化合物之氫化物，或其他公知之氫化環氧樹脂。
脂環族環氧化合物、雜環系環氧化合物或氫化環氧樹脂可單獨使用，或亦可合併使用2種以上。又，除此等環 氧化合物以外，只要不會損害本發明之效果，亦可合併使用其他的環氧化合物。例如可列舉：使雙酚A、雙酚F、雙酚S、四甲基雙酚A、二芳基雙酚A、氫醌、苯二酚、間苯二酚、甲酚、四溴雙酚A、三羥基聯苯、二苯甲酮、雙間苯二酚、雙酚六氟丙酮、四甲基雙酚A、四甲基雙酚F、三(羥苯基)甲烷、聯二甲苯酚(bixylenol)、苯酚酚醛清漆(phenol novolac)、甲酚酚醛清漆(cresol novolac)等多元酚與表氯醇反應所獲得之環氧丙基醚；使甘油、新戊二醇、乙二醇、丙二醇、丁二醇、己二醇(hexylene glycol)、聚乙二醇、聚丙二醇等脂肪族多元醇與表氯醇反應所獲得之聚環氧丙基醚；使如對羥苯甲酸、β-羥基萘甲酸(β-oxynaphthoic acid)之羥基羧酸與表氯醇反應所獲得之環氧丙基醚酯；由如酞酸、甲基酞酸、異酞酸、對酞酸、四氫酞酸、內亞甲四氫酞酸、內亞甲六氫酞酸、苯偏三酸(trimellitic acid)、聚合脂肪酸之聚羧酸所獲得之聚環氧丙基酯；由胺基苯酚、胺基烷基苯酚所獲得之環氧丙基胺基環氧丙基醚；由胺基苯甲酸所獲得之環氧丙基胺基環氧丙基酯；由苯胺、甲苯胺、三溴苯胺、伸二甲苯二胺(xylylenediamine)、二胺基環己烷、雙胺基甲基環己烷、4,4'-二胺基二苯基甲烷、4,4'-二胺基二苯基碸等所獲得之環氧丙基胺；環氧化聚烯等公知之環氧樹脂類。
硬化劑可列舉酸酐、咪唑化合物、二氰(dicyan)等。其中，可較佳使用不易使硬化物變色之酸酐硬化劑，特別是脂環族酸酐系硬化劑。具體而言，可較佳舉出甲基六氫 酞酸酐等。
於本發明之光反射性異向性導電接著劑的熱硬化性樹脂組成物中，當使用脂環族環氧化合物與脂環族酸酐系硬化劑之情形時，各自的使用量，若脂環族酸酐系硬化劑過少，則未硬化環氧化合物會變多，若過多，則會有因剩餘之硬化劑之影響而促進被黏附體材料腐蝕的傾向，因此較佳為相對於脂環族環氧化合物100質量份，以80~120質量份，更佳為以95~105質量份之比例使用脂環族酸酐系硬化劑。
本發明之光反射性異向性導電接著劑可藉由均勻地混合光反射性針狀絕緣粒子及光反射性球狀絕緣粒子與導電粒子與熱硬化性樹脂組成物來製造。又，在將本發明之光反射性異向性導電接著劑製成光反射性異向性導電膜之情形時，只要進行以下處理即可：將光反射性針狀絕緣粒子及光反射性球狀絕緣粒子與導電粒子與熱硬化性樹脂組成物與甲苯等溶劑一同分散混合，以達到所需厚度之方式塗佈於經剝離處理之PET膜，再以約80℃左右之溫度進行乾燥。
接著，一面參照圖2，一面說明本發明之發光裝置。發光裝置200，係於基板21上之連接端子22、與分別形成於作為發光元件之LED元件23的n電極24與p電極25之連接用凸塊26之間，塗佈前述本發明之光反射性異向性導電接著劑，將基板21與LED元件23加以覆晶構裝的發光裝置。此處，光反射性異向性導電接著劑之硬化物100，係光 反射性導電粒子10以及光反射性針狀絕緣粒子與光反射性球狀絕緣粒子分散於熱硬化性樹脂組成物之硬化物11中而成者。另，視需要，亦可用透明模具樹脂以覆蓋整個LED元件23之方式將其密封。又，亦可與以往同樣地在LED元件23設置光反射層。
以上述方式構成之發光裝置200，LED元件23所發出之光中，朝基板21側發出之光會被光反射性異向性導電接著劑之硬化物100中的光反射性導電粒子10反射，而自LED元件23之上面射出。因此，可防止發光效率降低。又，由於包含有光反射性針狀絕緣粒子，因此可改善光反射性異向性導電接著劑之硬化物的傳導可靠性，抑制或防止裂痕的發生。
可將本發明之發光裝置200中的光反射性異向性導電接著劑以外的構成(LED元件23、凸塊26、基板21、連接端子22等)形成為與以往之發光裝置的構成相同。又，本發明之發光裝置200除使用本發明之光反射性異向性導電接著劑以外，還可利用以往之異向性導電連接技術來進行製造。另，作為發光元件，除LED元件以外，在不會損及本發明之效果的範圍可應用公知的發光元件。
實施例
以下說明本發明之具體實施例。另，本發明之範圍並不限定於下述任一個實施例。
實施例1~7，比較例1~4 (異向性導電接著劑之製作)
將光反射性白色針狀絕緣粒子(金屬氧化物晶鬚)及/或光反射性白色球狀絕緣粒子(金屬氧化物粒子)、與作為導電粒子之球狀丙烯酸樹脂粒子表面形成有鍍金層的金包覆樹脂粒子(平均粒徑5μm)或以氧化鈦微粒包覆而成的光反射性導電粒子(平均粒徑5μm)10質量份，以表1之添加量混合於含有脂環族環氧化合物(CEL2021P，Daicel股份有限公司)50質量份與甲基六氫酞酸酐50質量份的透明環氧系熱硬化性樹脂組成物(折射率1.45)，製備異向性導電接著劑。
另，實施例6所使用之光反射性導電粒子，係藉由將粒徑0.5μm的氧化鈦粉末4質量份、粒徑0.2μm的聚苯乙烯系粉末3質量份、及粒徑5μm的導電粒子(對平均粒徑4.6μm之球狀丙烯酸樹脂粒子施以0.2μm厚之無電鍍金而成的粒子(20GNR4.6EH，日本化學工業股份有限公司))20質量份投入機械融合裝置(AMS-GMP，Hosokawamicron股份有限公司)，將氧化鈦粒子構成之約1μm厚的光反射層成膜於金包覆樹脂粒子表面而製得。此光反射性導電粒子的外觀顏色為灰色。
又，實施例1及2所使用之光反射性白色球狀絕緣粒子，係以Si膜與Al膜包覆粒徑0.5μm之TiO2表面者。而實施例6所使用之光反射性白色針狀絕緣粒子，則是ZnO晶鬚之表面經矽偶合劑(silicon coupling agent)進行過表面處理(矽石處理)者(PANATETRA，AMTEC股份有限公司)。
(光反射率之評價)
將所製作之異向性導電接著劑以厚度成為100μm的方式塗佈於白色板上，以200℃加熱1分鐘使其硬化。對所得之硬化物，使用分光光度計(UV3100，島津製作所股份有限公司)測量以硫酸鋇作為標準之對於波長450nm之光的總反射率(鏡面反射及擴散反射)。所得之結果示於表1。在實用上，光反射率宜超過30%。
(LED構裝模組樣品之製作)
使用凸塊接合機(FB700，Kaijo股份有限公司)，於具有對100μm間距之銅配線進行Ni/Au(5.0μm厚/0.3μm厚)鍍敷處理而成之配線的玻璃環氧基板形成15μm高的金(Au)凸塊。使用光反射性異向性導電接著劑，以200℃、20秒、1kg/晶片之條件，將藍色LED(Vf=3.2V(If=20mA))元件覆晶構裝於該附有金凸塊之環氧基板，而獲得測試用LED模組。
(總光通量之評價)
對於所獲得之測試用LED模組，使用總光通量測量系統(積分全球)(LE-2100，大塚電子股份有限公司)測量總光通量(測量條件：If=20mA(控制恆定電流))。將所得之結果示於表1。在實用上，總光通量宜超過300mlm。
(傳導可靠性及耐裂痕性之評價)
對於傳導可靠性及耐裂痕性，藉由進行以下2種冷熱循環測試(TCT)來加以評價。
<TCT-A>
將測試用LED模組暴露於-40℃及100℃的環境各30分鐘，進行以此為1循環的冷熱循環1000次。
<TCT-B>
將測試用LED模組暴露於-55℃及125℃的環境各30分鐘，進行以此為1循環的冷熱循環1000次。
傳導可靠性之評價係於進行TCT 1000次後，對從TCT取出之測試用LED模組測量If=20mA時的Vf值，以下述基準進行評價。
等級：基準
A：從初期Vf值之Vf值的增加量未達3%之情形。
B：從初期Vf值之Vf值的增加量在3%以上、未達5%之情形。
C：從初期Vf值之Vf值的增加量在5%以上之情形。
而有無發生裂痕之評價，係在進行TCT 1000次後，對從TCT取出之測試用LED模組，以金屬顯微鏡從藍色LED元件的上面進行觀察，觀察光反射性異向性導電接著劑之硬化物是否發生裂痕，以下述基準進行評價。
等級：基準
A：完全沒有觀察到發生裂痕的情形。
B：觀察到發生些微裂痕，但在實用上沒有問題之程度的情形。
C：觀察到發生裂痕的情形。
從表1可知，實施例1~7之異向性導電接著劑的情形，總反射率在37%以上，總光通量亦在340mlm以上。且耐裂痕性及傳導可靠性的評價皆為「A」評價。
相對於此，比較例1之異向性導電接著劑的情形，由於未摻合光反射性絕緣粒子，因此外觀顏色為褐色，故總反射率低至8%，總光通量亦低至200mlm，皆為非常低值的結果。
又，比較例2之異向性導電接著劑的情形，雖然光反射性絕緣粒子之總的摻合量與實施例3的異向性導電接著劑相同，但由於沒有摻合光反射性白色球狀絕緣粒子，而僅使用光反射性白色針狀絕緣粒子，故總反射率從42%(實施例3)下降至35%，而且總光通量亦從360mlm(實施例3)下降至300mlm。
比較例3之異向性導電接著劑的情形，雖然光反射性絕緣粒子之總的摻合量與實施例3的異向性導電接著劑相同，但是沒有摻合光反射性白色針狀絕緣粒子，而僅使用光反射性白色球狀絕緣粒子，故雖然總反射率從42%(實施例3)上升至50%，但是耐裂痕性卻為「C」評價，傳導可靠性在TCT-B的情形亦為「B」評價。
比較例4之異向性導電接著劑的情形，相較於實施例3之異向性導電接著劑的情形，由於使光反射性白色球狀絕緣粒子從4vol%增大至16vol%，因此使總反射率、總光通量獲得改善，但耐裂痕性卻為「B」或「C」評價，傳導可靠性在TCT-B的情形亦為「B」評價。
產業上之可利用性
本發明之光反射性異向性導電接著劑，分別以相對於熱硬化性樹脂組成物為1~50體積%摻合光反射性之針狀絕緣粒子與球狀絕緣粒子，且將光反射性球狀絕緣粒子相對於光反射性針狀絕緣粒子的摻合比設定為1：1~10。因此，即使不在LED元件設置會導致製造成本增加的光反射層，亦可改善發光效率，而且可抑制或防止因環境溫度變化造成在發光裝置的異向性導電連接部發生的傳導可靠性下降或裂痕的發生。因此，本發明之光反射性異向性導電接著劑在覆晶構裝LED元件時是有用的。
1‧‧‧核心粒子
2‧‧‧無機粒子
3、40‧‧‧光反射層
4‧‧‧熱塑性樹脂
10、20‧‧‧光反射性導電粒子
11‧‧‧熱硬化性樹脂組成物之硬化物
21、31‧‧‧基板
22、36‧‧‧連接端子
23、33‧‧‧LED元件
24、35‧‧‧n電極
25、34‧‧‧p電極
26、39‧‧‧凸塊
32‧‧‧固晶接著劑
37‧‧‧金導線
38‧‧‧透明模具樹脂
41‧‧‧異向性導電糊(ACP)
100‧‧‧光反射性異向性導電接著劑之硬化物
200‧‧‧發光裝置
圖1A，係使用於本發明之光反射性異向性導電接著劑的光反射性導電粒子的剖面圖。
圖1B，係使用於本發明之光反射性異向性導電接著劑的光反射性導電粒子的剖面圖。
圖2，係本發明之發光裝置的剖面圖。
圖3，係以往之發光裝置的剖面圖。
圖4，係以往之發光裝置的剖面圖。
10‧‧‧光反射性導電粒子
11‧‧‧熱硬化性樹脂組成物之硬化物
21‧‧‧基板
22‧‧‧連接端子
23‧‧‧LED元件
24‧‧‧n電極
25‧‧‧p電極
26‧‧‧凸塊
100‧‧‧光反射性異向性導電接著劑之硬化物
200‧‧‧發光裝置

Claims (16)

  1. 一種光反射性異向性導電接著劑，用以將發光元件異向性導電連接於配線板，該光反射性異向性導電接著劑含有熱硬化性樹脂組成物、導電粒子、光反射性針狀絕緣粒子及光反射性球狀絕緣粒子，該熱硬化性樹脂組成物中之光反射性針狀絕緣粒子及光反射性球狀絕緣粒子的摻合量相對於熱硬化性樹脂組成物，分別為1~50體積%，且光反射性球狀絕緣粒子相對於光反射性針狀絕緣粒子的摻合比(V/V)為1：1~10。
  2. 如申請專利範圍第1項之光反射性異向性導電接著劑，其中，該光反射性針狀絕緣粒子係選自由氧化鈦晶鬚(whisker)、氧化鋅晶鬚、鈦酸鹽晶鬚、硼酸鋁晶鬚及矽灰石構成之群中的至少一種針狀無機粒子。
  3. 如申請專利範圍第2項之光反射性異向性導電接著劑，其中，該光反射性針狀無機粒子為氧化鋅晶鬚。
  4. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，該光反射性針狀絕緣粒子係針狀無機粒子經矽烷偶合劑處理過者。
  5. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，該光反射性針狀絕緣粒子的長寬比大於10、未達35。
  6. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，光反射性針狀絕緣粒子的折射率(JIS K7142)大於熱硬化性樹脂組成物之硬化物的折射率(JIS K7142)。
  7. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，光反射性球狀絕緣粒子係選自由氧化鈦、氮化硼、氧化鋅及氧化鋁構成之群中的至少一種球狀無機粒子。
  8. 如申請專利範圍第7項之光反射性異向性導電接著劑，其中，光反射性球狀絕緣粒子的平均粒徑為0.02~20μm。
  9. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，光反射性球狀絕緣粒子的折射率(JIS K7142)大於熱硬化性樹脂組成物之硬化物的折射率(JIS K7142)。
  10. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，光反射性球狀絕緣粒子係球狀金屬粒子之表面以絕緣性樹脂包覆的樹脂包覆金屬粒子。
  11. 如申請專利範圍第10項之光反射性異向性導電接著劑，其中，光反射性球狀絕緣粒子係球狀銀粒子之表面以絕緣性樹脂包覆的樹脂包覆銀粒子。
  12. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，熱硬化性樹脂組成物含有環氧樹脂與酸酐系硬化劑。
  13. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，導電粒子係由被金屬材料包覆之核心粒子、與無機粒子形成於該核心粒子表面而成之光反 射層構成的光反射性導電粒子，該無機粒子選自氧化鈦粒子、氧化鋅粒子或氧化鋁粒子中的至少一種。
  14. 如申請專利範圍第1至3項中任一項之光反射性異向性導電接著劑，其中，導電粒子相對於熱硬化性樹脂組成物100質量份的摻合量為1~100質量份。
  15. 一種發光裝置，其藉由申請專利範圍第1至14項中任一項之光反射性異向性導電接著劑將發光元件以覆晶方式構裝於配線板。
  16. 如申請專利範圍第15項之發光裝置，其中，發光元件為發光二極體。
TW101106490A 2011-03-07 2012-02-29 A light reflective anisotropic conductive adhesive and a light emitting device TWI553088B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011048625A JP5609716B2 (ja) 2011-03-07 2011-03-07 光反射性異方性導電接着剤及び発光装置

Publications (2)

Publication Number Publication Date
TW201241145A TW201241145A (en) 2012-10-16
TWI553088B true TWI553088B (zh) 2016-10-11

Family

ID=46797990

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101106490A TWI553088B (zh) 2011-03-07 2012-02-29 A light reflective anisotropic conductive adhesive and a light emitting device

Country Status (7)

Country Link
US (1) US20130264602A1 (zh)
EP (1) EP2685513B1 (zh)
JP (1) JP5609716B2 (zh)
KR (1) KR101911564B1 (zh)
CN (1) CN103403896B (zh)
TW (1) TWI553088B (zh)
WO (1) WO2012121021A1 (zh)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617210B2 (ja) * 2009-09-14 2014-11-05 デクセリアルズ株式会社 光反射性異方性導電接着剤及び発光装置
JP5916334B2 (ja) * 2011-10-07 2016-05-11 デクセリアルズ株式会社 異方性導電接着剤及びその製造方法、発光装置及びその製造方法
DE102013104195A1 (de) * 2013-04-25 2014-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
KR101513641B1 (ko) 2013-08-20 2015-04-22 엘지전자 주식회사 표시장치
DE102013110114A1 (de) * 2013-09-13 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
JP6292808B2 (ja) 2013-09-13 2018-03-14 デクセリアルズ株式会社 接着剤、及び発光装置
KR20160061339A (ko) 2013-09-26 2016-05-31 데쿠세리아루즈 가부시키가이샤 발광 장치, 이방성 도전 접착제, 발광 장치 제조 방법
JP6450923B2 (ja) 2013-12-20 2019-01-16 パナソニックＩｐマネジメント株式会社 電子部品実装システムおよび電子部品実装方法ならびに電子部品実装装置
US9812625B2 (en) 2014-02-18 2017-11-07 Nichia Corporation Light-emitting device having resin member with conductive particles
JP6347635B2 (ja) * 2014-03-19 2018-06-27 デクセリアルズ株式会社 異方性導電接着剤
TWI693267B (zh) 2014-05-23 2020-05-11 日商迪睿合股份有限公司 接著劑及連接構造體
JP6565902B2 (ja) 2015-03-18 2019-08-28 デクセリアルズ株式会社 発光装置製造方法
DE102015112967A1 (de) * 2015-08-06 2017-02-09 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
TWI569473B (zh) * 2015-08-26 2017-02-01 邱羅利士公司 封裝結構及其製法
CN105552192A (zh) * 2015-12-08 2016-05-04 *** 一种多晶反射绝缘板及其制备方法
TWM521008U (zh) * 2016-01-27 2016-05-01 Lite On Technology Corp 車燈裝置及其發光模組
DE102016106494A1 (de) * 2016-04-08 2017-10-12 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements
JP2018088498A (ja) * 2016-11-29 2018-06-07 デクセリアルズ株式会社 異方性導電接着剤
JP6868388B2 (ja) * 2016-12-26 2021-05-12 日亜化学工業株式会社 発光装置および集積型発光装置
JP7014948B2 (ja) * 2017-06-13 2022-02-02 日亜化学工業株式会社 発光装置の製造方法および発光装置
WO2019167819A1 (ja) * 2018-03-01 2019-09-06 住友ベークライト株式会社 ペースト状接着剤組成物及び半導体装置
WO2020095796A1 (ja) * 2018-11-07 2020-05-14 日本化学工業株式会社 被覆粒子及びそれを含む導電性材料、並びに被覆粒子の製造方法
CN110283561B (zh) * 2019-05-30 2021-09-10 天津德高化成科技有限公司 一种led显示屏贴片式分立器件用封装树脂组合物及其用途
JP2021103609A (ja) 2019-12-24 2021-07-15 デクセリアルズ株式会社 異方性導電フィルム
JP7464862B2 (ja) 2022-04-21 2024-04-10 日亜化学工業株式会社 発光装置、光源

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192880A (ja) * 2007-02-06 2008-08-21 Nichia Chem Ind Ltd 発光装置及びその製造方法並びに発光装置用成形体
JP2009197185A (ja) * 2008-02-25 2009-09-03 Hitachi Chem Co Ltd 透明熱伝導接着フィルム及びその用途
JP2009259839A (ja) * 2009-07-27 2009-11-05 Sumitomo Bakelite Co Ltd 金属含有ペーストおよび半導体装置
TW200948923A (en) * 2008-05-28 2009-12-01 Sony Chem & Inf Device Corp Adhesive film
TW201032241A (en) * 2009-02-27 2010-09-01 Sony Chem & Inf Device Corp Anisotropic conductive film and light-emitting device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1334479C (en) * 1988-08-29 1995-02-21 Minoru Yoshinaka Conductive composition and method for making the same
JPH11168235A (ja) 1997-12-05 1999-06-22 Toyoda Gosei Co Ltd 発光ダイオード
JP4098403B2 (ja) * 1998-06-01 2008-06-11 富士通株式会社 接着剤、接着方法及び実装基板の組み立て体
JP3637277B2 (ja) * 2000-03-21 2005-04-13 大塚化学ホールディングス株式会社 難燃剤、及び難燃性樹脂組成物、及び成形物、及び電子部品
JP2001332124A (ja) * 2000-05-22 2001-11-30 Toshiba Chem Corp 導電性ペーストおよび光半導体装置
US20050228097A1 (en) * 2004-03-30 2005-10-13 General Electric Company Thermally conductive compositions and methods of making thereof
CN101583670B (zh) * 2006-10-31 2012-04-11 大科能树脂有限公司 散热性树脂组合物、led实装用基板、反射器以及具有反射器部的led实装用基板
JP5914987B2 (ja) * 2010-06-09 2016-05-11 デクセリアルズ株式会社 光反射性異方性導電ペースト及び発光装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192880A (ja) * 2007-02-06 2008-08-21 Nichia Chem Ind Ltd 発光装置及びその製造方法並びに発光装置用成形体
JP2009197185A (ja) * 2008-02-25 2009-09-03 Hitachi Chem Co Ltd 透明熱伝導接着フィルム及びその用途
TW200948923A (en) * 2008-05-28 2009-12-01 Sony Chem & Inf Device Corp Adhesive film
TW201032241A (en) * 2009-02-27 2010-09-01 Sony Chem & Inf Device Corp Anisotropic conductive film and light-emitting device
JP2009259839A (ja) * 2009-07-27 2009-11-05 Sumitomo Bakelite Co Ltd 金属含有ペーストおよび半導体装置

Also Published As

Publication number Publication date
KR20140052950A (ko) 2014-05-07
WO2012121021A1 (ja) 2012-09-13
JP2012186322A (ja) 2012-09-27
KR101911564B1 (ko) 2018-10-24
JP5609716B2 (ja) 2014-10-22
CN103403896B (zh) 2016-10-05
CN103403896A (zh) 2013-11-20
EP2685513A1 (en) 2014-01-15
EP2685513B1 (en) 2015-10-21
EP2685513A4 (en) 2014-12-31
US20130264602A1 (en) 2013-10-10
TW201241145A (en) 2012-10-16

Similar Documents

Publication Publication Date Title
TWI553088B (zh) A light reflective anisotropic conductive adhesive and a light emitting device
TWI520155B (zh) A light reflective anisotropic conductive adhesive and a light emitting device
TWI529980B (zh) Manufacturing method of light emitting device
TWI513783B (zh) A light reflective anisotropic conductive adhesive and a light emitting device
TWI534839B (zh) Light reflective conductive particles, anisotropic conductive adhesives and light-emitting devices
WO2012046539A1 (ja) マルチチップ実装用緩衝フィルム
TWI517456B (zh) Light reflective conductive particles, anisotropic conductive adhesives and light-emitting devices
JP5785306B2 (ja) 光反射性異方性導電接着剤及び発光装置
JP2014030026A (ja) 異方性導電接着剤及び発光装置