WO2012057512A3 - 화합물 반도체 장치 및 그 제조 방법 - Google Patents
화합물 반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- WO2012057512A3 WO2012057512A3 PCT/KR2011/008009 KR2011008009W WO2012057512A3 WO 2012057512 A3 WO2012057512 A3 WO 2012057512A3 KR 2011008009 W KR2011008009 W KR 2011008009W WO 2012057512 A3 WO2012057512 A3 WO 2012057512A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- compound semiconductor
- semiconductor device
- manufacturing same
- graphene oxide
- substrate
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000000034 method Methods 0.000 title 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 229910021389 graphene Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02499—Monolayers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Led Devices (AREA)
- Carbon And Carbon Compounds (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11836604.6A EP2634824B1 (en) | 2010-10-26 | 2011-10-26 | Compound semiconductor device and method for manufacturing the same |
US13/880,706 US8878233B2 (en) | 2010-10-26 | 2011-10-26 | Compound semiconductor devices and methods of fabricating the same |
JP2013536509A JP5779655B2 (ja) | 2010-10-26 | 2011-10-26 | 化合物半導体装置及びその製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100104552A KR101180176B1 (ko) | 2010-10-26 | 2010-10-26 | 화합물 반도체 장치 및 그 제조 방법 |
KR10-2010-0104552 | 2010-10-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2012057512A2 WO2012057512A2 (ko) | 2012-05-03 |
WO2012057512A3 true WO2012057512A3 (ko) | 2012-07-26 |
Family
ID=45994548
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/008019 WO2012057517A2 (ko) | 2010-10-26 | 2011-10-26 | 화합물 반도체 장치 및 화합물 반도체 제조방법 |
PCT/KR2011/008009 WO2012057512A2 (ko) | 2010-10-26 | 2011-10-26 | 화합물 반도체 장치 및 그 제조 방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2011/008019 WO2012057517A2 (ko) | 2010-10-26 | 2011-10-26 | 화합물 반도체 장치 및 화합물 반도체 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8878233B2 (ko) |
EP (2) | EP2634825B1 (ko) |
JP (2) | JP5779655B2 (ko) |
KR (1) | KR101180176B1 (ko) |
WO (2) | WO2012057517A2 (ko) |
Families Citing this family (24)
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CN103378239B (zh) * | 2012-04-25 | 2016-06-08 | 清华大学 | 外延结构体 |
CN103378223B (zh) * | 2012-04-25 | 2016-07-06 | 清华大学 | 外延结构体的制备方法 |
CN103378224B (zh) | 2012-04-25 | 2016-06-29 | 清华大学 | 外延结构的制备方法 |
JP2014237570A (ja) * | 2013-06-10 | 2014-12-18 | 日本電信電話株式会社 | 窒化物半導体基板の製造方法 |
KR101498688B1 (ko) * | 2013-07-08 | 2015-03-06 | 전북대학교산학협력단 | 그라핀층을 갖는 발광소자와 그 제조방법 |
JP6143598B2 (ja) * | 2013-08-01 | 2017-06-07 | 株式会社東芝 | 半導体装置 |
CN103741220A (zh) * | 2014-01-20 | 2014-04-23 | 山东大学 | 利用石墨烯或氧化石墨烯生长高质量氮化镓晶体的方法 |
JP6652493B2 (ja) | 2014-02-14 | 2020-02-26 | ジェンサーム インコーポレイテッドGentherm Incorporated | 伝導性および対流性の温度調節シート |
US11639816B2 (en) | 2014-11-14 | 2023-05-02 | Gentherm Incorporated | Heating and cooling technologies including temperature regulating pad wrap and technologies with liquid system |
CN107251247B (zh) * | 2014-11-14 | 2021-06-01 | 查尔斯·J·柯西 | 加热和冷却技术 |
US11857004B2 (en) | 2014-11-14 | 2024-01-02 | Gentherm Incorporated | Heating and cooling technologies |
KR102651544B1 (ko) | 2016-11-21 | 2024-03-28 | 삼성전자주식회사 | 광대역 다기능 광학소자와 그 제조 및 동작방법 |
KR102115598B1 (ko) | 2016-12-27 | 2020-05-26 | 주식회사 엘지화학 | 분리막 및 이를 포함하는 리튬-황 전지 |
KR102115599B1 (ko) | 2016-12-27 | 2020-05-26 | 주식회사 엘지화학 | 분리막 및 이를 포함하는 리튬-황 전지 |
US10453681B2 (en) * | 2017-04-12 | 2019-10-22 | Tokyo Electron Limited | Method of selective vertical growth of a dielectric material on a dielectric substrate |
US11034847B2 (en) | 2017-07-14 | 2021-06-15 | Samsung Electronics Co., Ltd. | Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition |
KR102433666B1 (ko) | 2017-07-27 | 2022-08-18 | 삼성전자주식회사 | 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
KR102486388B1 (ko) * | 2017-07-28 | 2023-01-09 | 삼성전자주식회사 | 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크 |
US11223004B2 (en) | 2018-07-30 | 2022-01-11 | Gentherm Incorporated | Thermoelectric device having a polymeric coating |
CN109037404B (zh) * | 2018-08-01 | 2019-06-18 | 广东旭宇光电有限公司 | 植物萌芽照射二极管及其制备方法和植物萌芽照射灯 |
WO2020112902A1 (en) | 2018-11-30 | 2020-06-04 | Gentherm Incorporated | Thermoelectric conditioning system and methods |
US11152557B2 (en) | 2019-02-20 | 2021-10-19 | Gentherm Incorporated | Thermoelectric module with integrated printed circuit board |
CN110246943B (zh) * | 2019-06-17 | 2021-12-07 | 湘能华磊光电股份有限公司 | 基于石墨烯的led外延生长方法 |
EP3940763A1 (en) * | 2020-07-14 | 2022-01-19 | IMEC vzw | Method of manufacturing a semiconductor structure |
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KR20040029165A (ko) * | 1998-03-12 | 2004-04-03 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자 |
KR20090059871A (ko) * | 2007-12-07 | 2009-06-11 | 삼성전자주식회사 | 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극 |
KR20100042122A (ko) * | 2008-10-15 | 2010-04-23 | 고려대학교 산학협력단 | 반도체 발광 소자 및 그 제조 방법 |
KR20100055098A (ko) * | 2008-11-17 | 2010-05-26 | 천승현 | 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법 |
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JP5070247B2 (ja) * | 2009-06-23 | 2012-11-07 | 株式会社沖データ | 半導体装置の製造方法、及び半導体装置 |
US8409366B2 (en) * | 2009-06-23 | 2013-04-02 | Oki Data Corporation | Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof |
JP4527194B1 (ja) * | 2009-12-11 | 2010-08-18 | エンパイア テクノロジー ディベロップメント エルエルシー | グラフェン構造体、グラフェン構造体の製造方法、及び電子デバイス |
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2010
- 2010-10-26 KR KR1020100104552A patent/KR101180176B1/ko active IP Right Grant
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2011
- 2011-10-26 JP JP2013536509A patent/JP5779655B2/ja active Active
- 2011-10-26 US US13/880,706 patent/US8878233B2/en active Active
- 2011-10-26 WO PCT/KR2011/008019 patent/WO2012057517A2/ko active Application Filing
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Also Published As
Publication number | Publication date |
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JP2013545299A (ja) | 2013-12-19 |
EP2634825A4 (en) | 2016-01-06 |
EP2634824B1 (en) | 2018-12-12 |
KR101180176B1 (ko) | 2012-09-05 |
EP2634825A2 (en) | 2013-09-04 |
WO2012057512A2 (ko) | 2012-05-03 |
EP2634824A2 (en) | 2013-09-04 |
US9214596B2 (en) | 2015-12-15 |
JP5676004B2 (ja) | 2015-02-25 |
EP2634825B1 (en) | 2018-12-26 |
US8878233B2 (en) | 2014-11-04 |
US20130285013A1 (en) | 2013-10-31 |
JP2014501035A (ja) | 2014-01-16 |
WO2012057517A2 (ko) | 2012-05-03 |
EP2634824A4 (en) | 2016-01-06 |
US20130200424A1 (en) | 2013-08-08 |
JP5779655B2 (ja) | 2015-09-16 |
KR20120043313A (ko) | 2012-05-04 |
WO2012057517A3 (ko) | 2012-07-26 |
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