WO2012057512A3 - 화합물 반도체 장치 및 그 제조 방법 - Google Patents

화합물 반도체 장치 및 그 제조 방법 Download PDF

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Publication number
WO2012057512A3
WO2012057512A3 PCT/KR2011/008009 KR2011008009W WO2012057512A3 WO 2012057512 A3 WO2012057512 A3 WO 2012057512A3 KR 2011008009 W KR2011008009 W KR 2011008009W WO 2012057512 A3 WO2012057512 A3 WO 2012057512A3
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Prior art keywords
compound semiconductor
semiconductor device
manufacturing same
graphene oxide
substrate
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PCT/KR2011/008009
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English (en)
French (fr)
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WO2012057512A2 (ko
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안성진
이동건
김석한
Original Assignee
주식회사 엘지실트론
금오공과대학교 산학협력단
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Priority to EP11836604.6A priority Critical patent/EP2634824B1/en
Priority to US13/880,706 priority patent/US8878233B2/en
Priority to JP2013536509A priority patent/JP5779655B2/ja
Publication of WO2012057512A2 publication Critical patent/WO2012057512A2/ko
Publication of WO2012057512A3 publication Critical patent/WO2012057512A3/ko

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02441—Group 14 semiconducting materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.

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  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Led Devices (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

화합물 반도체 장치 및 그 제조 방법을 제공한다. 기판, 기판 상의 산화 그래핀층이 제공된다. 산화 그래핀층 상에 제 1 화합물 반도체층이 제공된다. 제 1 화합물 반도체층은 산화 그래핀층에 의하여 노출된 상기 기판으로부터 선택적으로 성장된다.
PCT/KR2011/008009 2010-10-26 2011-10-26 화합물 반도체 장치 및 그 제조 방법 WO2012057512A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP11836604.6A EP2634824B1 (en) 2010-10-26 2011-10-26 Compound semiconductor device and method for manufacturing the same
US13/880,706 US8878233B2 (en) 2010-10-26 2011-10-26 Compound semiconductor devices and methods of fabricating the same
JP2013536509A JP5779655B2 (ja) 2010-10-26 2011-10-26 化合物半導体装置及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100104552A KR101180176B1 (ko) 2010-10-26 2010-10-26 화합물 반도체 장치 및 그 제조 방법
KR10-2010-0104552 2010-10-26

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WO2012057512A2 WO2012057512A2 (ko) 2012-05-03
WO2012057512A3 true WO2012057512A3 (ko) 2012-07-26

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PCT/KR2011/008019 WO2012057517A2 (ko) 2010-10-26 2011-10-26 화합물 반도체 장치 및 화합물 반도체 제조방법
PCT/KR2011/008009 WO2012057512A2 (ko) 2010-10-26 2011-10-26 화합물 반도체 장치 및 그 제조 방법

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US (2) US8878233B2 (ko)
EP (2) EP2634825B1 (ko)
JP (2) JP5779655B2 (ko)
KR (1) KR101180176B1 (ko)
WO (2) WO2012057517A2 (ko)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103378239B (zh) * 2012-04-25 2016-06-08 清华大学 外延结构体
CN103378223B (zh) * 2012-04-25 2016-07-06 清华大学 外延结构体的制备方法
CN103378224B (zh) 2012-04-25 2016-06-29 清华大学 外延结构的制备方法
JP2014237570A (ja) * 2013-06-10 2014-12-18 日本電信電話株式会社 窒化物半導体基板の製造方法
KR101498688B1 (ko) * 2013-07-08 2015-03-06 전북대학교산학협력단 그라핀층을 갖는 발광소자와 그 제조방법
JP6143598B2 (ja) * 2013-08-01 2017-06-07 株式会社東芝 半導体装置
CN103741220A (zh) * 2014-01-20 2014-04-23 山东大学 利用石墨烯或氧化石墨烯生长高质量氮化镓晶体的方法
JP6652493B2 (ja) 2014-02-14 2020-02-26 ジェンサーム インコーポレイテッドＧｅｎｔｈｅｒｍ Ｉｎｃｏｒｐｏｒａｔｅｄ 伝導性および対流性の温度調節シート
US11639816B2 (en) 2014-11-14 2023-05-02 Gentherm Incorporated Heating and cooling technologies including temperature regulating pad wrap and technologies with liquid system
CN107251247B (zh) * 2014-11-14 2021-06-01 查尔斯·J·柯西 加热和冷却技术
US11857004B2 (en) 2014-11-14 2024-01-02 Gentherm Incorporated Heating and cooling technologies
KR102651544B1 (ko) 2016-11-21 2024-03-28 삼성전자주식회사 광대역 다기능 광학소자와 그 제조 및 동작방법
KR102115598B1 (ko) 2016-12-27 2020-05-26 주식회사 엘지화학 분리막 및 이를 포함하는 리튬-황 전지
KR102115599B1 (ko) 2016-12-27 2020-05-26 주식회사 엘지화학 분리막 및 이를 포함하는 리튬-황 전지
US10453681B2 (en) * 2017-04-12 2019-10-22 Tokyo Electron Limited Method of selective vertical growth of a dielectric material on a dielectric substrate
US11034847B2 (en) 2017-07-14 2021-06-15 Samsung Electronics Co., Ltd. Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition
KR102433666B1 (ko) 2017-07-27 2022-08-18 삼성전자주식회사 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
KR102486388B1 (ko) * 2017-07-28 2023-01-09 삼성전자주식회사 그래핀 양자점의 제조방법, 상기 제조방법에 따라 얻어진 그래핀 양자점을 포함한 하드마스크 조성물, 이를 이용한 패턴의 형성방법 및 상기 하드마스크 조성물을 이용하여 형성된 하드마스크
US11223004B2 (en) 2018-07-30 2022-01-11 Gentherm Incorporated Thermoelectric device having a polymeric coating
CN109037404B (zh) * 2018-08-01 2019-06-18 广东旭宇光电有限公司 植物萌芽照射二极管及其制备方法和植物萌芽照射灯
WO2020112902A1 (en) 2018-11-30 2020-06-04 Gentherm Incorporated Thermoelectric conditioning system and methods
US11152557B2 (en) 2019-02-20 2021-10-19 Gentherm Incorporated Thermoelectric module with integrated printed circuit board
CN110246943B (zh) * 2019-06-17 2021-12-07 湘能华磊光电股份有限公司 基于石墨烯的led外延生长方法
EP3940763A1 (en) * 2020-07-14 2022-01-19 IMEC vzw Method of manufacturing a semiconductor structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040029165A (ko) * 1998-03-12 2004-04-03 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
KR20090059871A (ko) * 2007-12-07 2009-06-11 삼성전자주식회사 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극
KR20100042122A (ko) * 2008-10-15 2010-04-23 고려대학교 산학협력단 반도체 발광 소자 및 그 제조 방법
KR20100055098A (ko) * 2008-11-17 2010-05-26 천승현 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법
KR20100094908A (ko) * 2009-02-19 2010-08-27 양원동 그라핀 소재가 인설된 엘이디 조명기구

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2645768B2 (ja) 1991-07-22 1997-08-25 コパル電子株式会社 動圧空気軸受型光偏向器
JP3620269B2 (ja) 1998-02-27 2005-02-16 豊田合成株式会社 ＧａＮ系半導体素子の製造方法
JP3650531B2 (ja) 1998-08-24 2005-05-18 三菱電線工業株式会社 ＧａＮ系結晶基材およびその製造方法
JP2001057463A (ja) 1999-06-07 2001-02-27 Sharp Corp 窒素化合物半導体膜構造及び窒素化合物半導体素子並びにそれらの製造方法
JP3589200B2 (ja) * 2000-06-19 2004-11-17 日亜化学工業株式会社 窒化物半導体基板及びその製造方法、並びにその窒化物半導体基板を用いた窒化物半導体素子
JP2002033512A (ja) * 2000-07-13 2002-01-31 Nichia Chem Ind Ltd 窒化物半導体発光ダイオード
JP2002299249A (ja) * 2001-03-29 2002-10-11 Sanyo Electric Co Ltd 半導体基板、半導体素子および半導体層の形成方法
JP2004055864A (ja) * 2002-07-22 2004-02-19 Fuji Photo Film Co Ltd 半導体素子用基板の製造方法および半導体素子用基板ならびに半導体素子
JP2003078214A (ja) 2002-08-26 2003-03-14 Nec Corp 窒化物半導体発光素子
JP2006344618A (ja) * 2005-06-07 2006-12-21 Fujifilm Holdings Corp 機能性膜含有構造体、及び、機能性膜の製造方法
JP2008277430A (ja) 2007-04-26 2008-11-13 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子
JP5276852B2 (ja) * 2008-02-08 2013-08-28 昭和電工株式会社 Ｉｉｉ族窒化物半導体エピタキシャル基板の製造方法
JP5326336B2 (ja) * 2008-04-18 2013-10-30 三菱瓦斯化学株式会社 導電体及びその製造方法
JP2009302314A (ja) * 2008-06-13 2009-12-24 Rohm Co Ltd ＧａＮ系半導体装置
TW201012749A (en) 2008-08-19 2010-04-01 Univ Rice William M Methods for preparation of graphene nanoribbons from carbon nanotubes and compositions, thin films and devices derived therefrom
CN102257600A (zh) * 2008-12-16 2011-11-23 惠普开发有限公司 在导热和导电掩模上具有elog的半导体结构
JP2010232464A (ja) * 2009-03-27 2010-10-14 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにレーザダイオード
KR101156620B1 (ko) * 2009-04-08 2012-06-14 한국전자통신연구원 그라핀 채널층을 가지는 전계 효과 트랜지스터
US8317984B2 (en) * 2009-04-16 2012-11-27 Northrop Grumman Systems Corporation Graphene oxide deoxygenation
JP5070247B2 (ja) * 2009-06-23 2012-11-07 株式会社沖データ 半導体装置の製造方法、及び半導体装置
US8409366B2 (en) * 2009-06-23 2013-04-02 Oki Data Corporation Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof
JP4527194B1 (ja) * 2009-12-11 2010-08-18 エンパイア テクノロジー ディベロップメント エルエルシー グラフェン構造体、グラフェン構造体の製造方法、及び電子デバイス

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040029165A (ko) * 1998-03-12 2004-04-03 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자
KR20090059871A (ko) * 2007-12-07 2009-06-11 삼성전자주식회사 도펀트로 도핑된 산화그라펜의 환원물, 이를 포함하는 박막및 투명전극
KR20100042122A (ko) * 2008-10-15 2010-04-23 고려대학교 산학협력단 반도체 발광 소자 및 그 제조 방법
KR20100055098A (ko) * 2008-11-17 2010-05-26 천승현 대면적 그래핀 층을 포함하는 전자 장치 및 이의 제조방법
KR20100094908A (ko) * 2009-02-19 2010-08-27 양원동 그라핀 소재가 인설된 엘이디 조명기구

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