WO2012046737A1 - ウエハ加工用テープ及びその製造方法 - Google Patents
ウエハ加工用テープ及びその製造方法 Download PDFInfo
- Publication number
- WO2012046737A1 WO2012046737A1 PCT/JP2011/072884 JP2011072884W WO2012046737A1 WO 2012046737 A1 WO2012046737 A1 WO 2012046737A1 JP 2011072884 W JP2011072884 W JP 2011072884W WO 2012046737 A1 WO2012046737 A1 WO 2012046737A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- adhesive
- wafer processing
- release film
- adhesive layer
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
- C09J7/405—Adhesives in the form of films or foils characterised by release liners characterised by the substrate of the release liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/204—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive coating being discontinuous
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Definitions
- the present invention relates to a wafer processing tape and a method for manufacturing the same.
- the present invention relates to a wafer processing tape having an adhesive film and an adhesive layer provided on the adhesive film, and a method for producing the same.
- a wafer processing tape having an adhesive layer provided on a base film has been developed.
- an adhesive layer is further laminated on the adhesive layer in order to bond the cut semiconductor chip to a lead frame, a package substrate, etc., or to stack and bond the semiconductor chips together in a stacked package.
- a wafer processing tape (dicing die bonding film) having a structure has also been developed (see, for example, Patent Document 1).
- a wafer processing tape (dicing die bonding film)
- a tape that has been pre-cut processed in consideration of workability such as attachment to a semiconductor wafer and attachment to a ring frame during dicing. Yes (see, for example, Patent Document 2).
- the manufacturing process of the wafer processing tape (dicing die bonding film) subjected to the pre-cut processing is a first cut of a predetermined shape (for example, a circle) in the adhesive layer of the adhesive film composed of the release film and the adhesive layer.
- An unnecessary adhesive layer portion outside the first cut is peeled off from the release film, and an adhesive film having a predetermined shape on the release film, an adhesive layer and a base
- a primary pre-cutting step in which an adhesive film made of a material film is bonded so that the adhesive layer and the adhesive layer are in contact with each other, and a predetermined shape (for example, a circle) of a first shape surrounding the adhesive film around the shape of the adhesive layer Make two cuts, peel off the unnecessary adhesive film part outside the second cut from the adhesive film (release film), wind it up, and place it on the adhesive film (release film). And a, a secondary precut processing step of forming the adhesive film shape.
- a production method for producing a wafer processing tape by successively performing the above-described two steps (primary precut processing step and secondary precut processing step). Production method) or by making a first cut of a predetermined shape (for example, a circle) in the adhesive layer, and peeling off the unnecessary adhesive layer portion outside the first cut from the release film.
- a predetermined shape for example, a circle
- Adhesion with a primary pre-cutting process in which an adhesive film having an adhesive layer of a predetermined shape formed thereon, an adhesive film composed of an adhesive layer and a base film are bonded together so that the adhesive layer and the adhesive layer are in contact with each other
- a production method for producing a tape for wafer processing by winding a film into a roll, and then recognizing and aligning the position of the adhesive layer and then performing a secondary pre-cut processing step The second manufacturing method) is.
- miniaturization and thinning of semiconductor devices are progressing in response to high-speed, power-saving, and miniaturization of semiconductor devices. Accordingly, the number of stacked semiconductor chips has been increased, and a wafer processing tape used for manufacturing a semiconductor device has a thinner (less than 10 ⁇ m) adhesive layer than conventional wafer processing tapes. The demand for tape is increasing.
- the first manufacturing method described above when performing the secondary precut processing, can be applied to the adhesive film at a predetermined interval without recognizing the position of the primary precut processing adhesive layer.
- the second cut in the second manufacturing method described above, after recognizing the position of the adhesive layer subjected to the primary precut process, the second cut is made in the adhesive film in accordance with the position of the adhesive layer. Therefore, in the conventional wafer processing tape in which the base film, the pressure-sensitive adhesive layer, and the adhesive layer are laminated in this order as proposed in Patent Document 1 and Patent Document 2, the adhesive layer is made thin.
- the outer peripheral portion of the primary precut adhesive layer is recognized by an optical sensor (for example, a transmissive sensor or a reflective sensor).
- an optical sensor for example, a transmissive sensor or a reflective sensor.
- an optical sensor is used as a primary pre-cut by using an adhesive layer containing a pigment that absorbs or reflects light within a wavelength range in which the optical sensor reacts.
- An adhesive sheet (adhesive film) for recognizing the outer peripheral portion of the processed adhesive layer has also been developed (see, for example, Patent Document 3).
- An object of the present invention is to provide a wafer processing tape having good productivity and inspection accuracy and a method for manufacturing the same.
- the inventors of the present invention have released a mold release film, an adhesive layer, and a wafer processing tape in which an adhesive film has been laminated in this order when the adhesive layer is first precut.
- the incision formed on the surface of the film is located at a position corresponding to the position where the incision is present in the laminated portion where the release film and the adhesive film are laminated, and at a position where there is no incision.
- the adhesive layer is thin (less than 10 ⁇ m, Even in the case of 5 ⁇ m or less in particular, the present inventors have found that the sensor recognizability, productivity, and inspection accuracy are good and completed the present invention.
- the wafer processing tape according to the first aspect of the present invention includes a long release film, one or more adhesive layers having a predetermined planar shape provided on the release film, One or more pressure-sensitive adhesive films each covering an adhesive layer and provided so as to be in contact with the release film around the adhesive layer, the release film, The surface of the release film on which the adhesive layer is laminated is formed with an annular cut along the outer periphery of the adhesive layer, and the release film and the adhesive film are laminated.
- 600 to 700 nm means 600 nm to 700 nm.
- the wafer processing tape according to the second aspect of the present invention is characterized in that, in the wafer processing tape according to the first aspect of the present invention, the transmittance difference C is 0.6 to 1.3%. .
- the wafer processing tape according to the third aspect of the present invention is characterized in that, in the wafer processing tape according to the first or second aspect of the present invention, the transmittance A is 75 to 95%.
- a wafer processing tape according to a fourth aspect of the present invention is the wafer processing tape according to any one of the first to third aspects of the present invention, and surrounds the outside of the adhesive film on the release film. It is provided with the peripheral part which consists of the said adhesive film and was provided.
- a plurality of adhesive layers having a predetermined planar shape are provided on a long release film, and the release film and Laminating an adhesive film on the adhesive film in which the adhesive layer is laminated in this order, covering the adhesive layer, and contacting the release film around the adhesive layer; and (B) In the laminate composed of the adhesive film and the pressure-sensitive adhesive film formed by the step (a), the laminate portion composed of the release film and the pressure-sensitive adhesive film is moved from the surface of the pressure-sensitive adhesive film.
- a method for producing a wafer processing tape comprising the step (a) Before (c) when providing the plurality of adhesive layers having a predetermined planar shape on the release film, the annular first notch along the outer periphery of the adhesive layer is removed from the release film.
- the method for producing a wafer processing tape according to the second aspect of the present invention is the method for producing a wafer processing tape according to the first aspect of the present invention, wherein the step (c) is such that the transmittance difference C is 0.
- the first cut portion is formed so as to be 1% or more.
- the method for manufacturing a wafer processing tape according to a third aspect of the present invention is the method for manufacturing a wafer processing tape according to the first aspect of the present invention, wherein the step (c) is such that the transmittance difference C is 0.
- the first cut portion is formed so as to be 6 to 1.3%.
- a wafer processing tape manufacturing method is the wafer processing tape manufacturing method according to any one of the first to third aspects of the present invention, in place of the step (b).
- the pressure-sensitive adhesive film is formed on the laminated portion including the release film and the pressure-sensitive adhesive film. Forming a plurality of annular second notches surrounding each adhesive layer from the surface to the release film, and forming a third notch outside the second notches It has the process of forming, It is characterized by the above-mentioned.
- the sensor recognizability can be improved even when the adhesive layer is thin (10 ⁇ m or less, particularly 5 ⁇ m or less). Therefore, in the semiconductor device manufacturing process, the use of the wafer processing tape of the present invention reduces the productivity of the semiconductor device even when the adhesive layer is thin (less than 10 ⁇ m, particularly less than 5 ⁇ m). And a decrease in inspection accuracy can be prevented.
- (A) is a general-view figure of the wafer processing tape 10 which concerns on one Embodiment of this invention
- (b) is the same top view
- (c) is the same sectional drawing.
- It is a general-view figure of the tape for wafer processing 10a which is a modification of the tape for wafer processing which concerns on the 1st Embodiment of this invention.
- It is a general-view figure of the tape 10b for wafer processing which is a modification of the tape for wafer processing which concerns on the 1st Embodiment of this invention.
- FIG. 5 is a view subsequent to FIG. 4 for explaining a method of manufacturing the wafer processing tape 10 of FIG. 1.
- FIG. 1A is a perspective view of a wafer processing tape 10 according to an embodiment of the present invention
- FIG. 1B is a plan view thereof
- FIG. 1C is a sectional view thereof.
- the wafer processing tape 10 includes a long release film 11, an adhesive layer 12 (22), and an adhesive film 13 (23a, 23b). ).
- the wafer processing tape 10 constitutes a dicing die bonding film 20 composed of an adhesive layer 12 (22) and an adhesive film 13 (23a).
- the adhesive layer 12 is provided on the surface 11a of the release film 11, and has a label shape corresponding to the shape of the semiconductor wafer.
- a circular shape will be described as an example of the label shape, but the label shape is not limited to the circular shape.
- the label-shaped adhesive layer 12 is referred to as a label-shaped adhesive portion 22.
- the release film 11 is formed with an annular first cut portion (hereinafter referred to as a first cut portion) 26 along the outer periphery of the label-shaped adhesive portion 22 on the surface 11a.
- the adhesive film 13 includes a label part 23a and a peripheral part 23b.
- the label part 23 a covers the label-shaped adhesive part 22 and is provided so as to come into contact with the release film 11 around the label-shaped adhesive part 22.
- the label portion 23a has a substantially circular shape corresponding to the dicing ring frame.
- the peripheral portion 23b does not completely surround the outside of the label portion 23a, and is provided so that the exposed release film 11 between the label portion 23a and the peripheral portion 23b is continuous.
- the peripheral portion 23b is provided so that the exposed release film 11 between the label portion 23a and the peripheral portion 23b is continuous.
- the peripheral portion 23b is a wafer processing tape 10a provided so as to completely surround the outside of the label portion 23a and the exposed release film 11 surrounding the outer periphery of the label portion 23a to be discontinuous. May be.
- the peripheral part 23b may not exist, and the tape 10b for wafer processing by which the adhesive film 13 was comprised only by the label part 23a may be sufficient.
- the release film 11 is used for the purpose of improving the handleability of the adhesive layer 12.
- an annular first cut portion 26 is formed on the surface 11 a along the outer periphery of the label-shaped adhesive portion 22.
- Examples of the release film 11 include a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethylpentene film, a polychloride chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, a polyethylene naphthalate film, and a polybutylene terephthalate film.
- Polyurethane film ethylene / vinyl acetate copolymer film, ionomer resin film, ethylene / (meth) acrylic acid copolymer film, ethylene / (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide film A fluororesin film or the like is used. These crosslinked films are also used. Furthermore, these laminated films may be sufficient.
- the surface tension of the release film 11 is preferably 40 mN / m or less, and more preferably 35 mN / m or less.
- a release film 11 having a low surface tension can be obtained by appropriately selecting the material, and can also be obtained by applying a release treatment by applying a silicone resin or the like to the surface of the film.
- the film thickness of the release film 11 is usually about 5 to 300 ⁇ m, preferably about 10 to 200 ⁇ m, and particularly preferably about 20 to 150 ⁇ m.
- the first cut portion 26 formed on the surface 11a of the release film 11 is a laminate portion 27b having the first cut portion 26 in the laminate portion where the release film 11 and the adhesive film 13 (23a) are laminated.
- the measuring method of the transmittances A and B (%) is not particularly limited.
- the measurement light of the transmittances A and B (%) may be the same wavelength or different wavelengths as long as they are in the range of 600 to 700 nm, but the measurement light of the transmittance A (%) and the transmittance B (%) It is preferable that the measurement light is set to the same wavelength and the transmittances A and B (%) are the transmittances of the light of the same wavelength. More preferably, the transmittance A is 75 to 95%. This is because sufficient sensor recognition cannot be obtained when the transmittance A is less than 75% or more than 95%.
- the transmittance B is determined by the type and thickness of the base film
- the transmittance difference C is determined by the depth of cut. Whether the depth is 0.1% or more depends on the type and thickness of the base film. More specifically, the transmittance of the base film is higher as it is more transparent in appearance, and the transmittance is lower as it is colored. Further, even with the release film 11 made of the same material, the adhesive film 13 having an adhesive applied to the embossed surface has a high transmittance, and the adhesive film 13 having an adhesive applied to the mirror surface has a low transmittance. Moreover, the transmittance
- the first cut portion 26 is preferably formed so that the ratio D is 13 to 92%.
- the manufacturability becomes unstable. Moreover, it is because sufficient sensor recognizability cannot be obtained. It should be noted that the manufacturability is unstable when the adhesive layer 12 is primarily precut to form the label-shaped adhesive portion 22 and the primary precut is insufficient, and an unnecessary adhesive layer other than the label-shaped adhesive portion 22 is used. This means that when the portion 12 is rolled up, the wafer processing tape 10 may not be manufactured due to the winding up to the portion of the label-shaped adhesive portion 22.
- the wafer processing tape 10 for manufacturing the wafer processing tape 10 after the primary precut or the semiconductor device is used. This is because the release film 11 is broken in the work process and various problems occur. For example, in each winding process (slit, secondary precut) of manufacturing the wafer processing tape 10 after the primary precut, due to a slit defect that must be reconditioned due to a width dimension shift, or due to breakage of the release film 11 In order to become a short product, a winding trouble that requires repeated splicing and reconditioning occurs.
- the release film 11 is wound and bonded between the semiconductor wafer and the dicing die bonding film 20. Since the fully automatic device is stopped due to the failure, a reworking operation becomes necessary.
- the adhesive layer 12 is attached to the back surface of the semiconductor chip when the semiconductor chip is picked up after the semiconductor wafer is bonded and diced, and is used as an adhesive for fixing the chip to the substrate or the lead frame. It is what is done.
- a polypropylene resin, an acrylic resin, a polyurethane resin, an epoxy resin, a polyacrylamide resin, a melamine resin, or a mixture thereof can be used.
- an epoxy group-containing acrylic copolymer contains 0.5 to 6% by mass of glycidyl acrylate or glycidyl methacrylate having an epoxy group.
- the content is preferably 0.5% by mass or more, and gelation can be suppressed if it is 6% by mass or less.
- the glass transition temperature (Tg) of the epoxy group-containing acrylic copolymer is preferably ⁇ 10 ° C. or higher and 30 ° C. or lower.
- the amount of glycidyl acrylate or glycidyl methacrylate used as the functional group monomer is a copolymer ratio of 0.5 to 6% by mass, but the remainder is an alkyl having 1 to 8 carbon atoms such as methyl acrylate or methyl methacrylate.
- Mixtures of acrylates, alkyl methacrylates, and styrene and acrylonitrile can be used. Among these, ethyl (meth) acrylate and / or butyl (meth) acrylate are particularly preferable.
- the mixing ratio is preferably adjusted in consideration of the glass transition temperature (Tg) of the copolymer.
- the weight average molecular weight of the acrylic copolymer is preferably 50,000 or more, particularly preferably in the range of 200,000 to 1,000,000. If the molecular weight is too low, film formation will be insufficient, and if it is too high, compatibility with other components will deteriorate, resulting in hindering film formation.
- a phenolic resin can be used as the curing agent.
- a condensate of phenols such as alkylphenol, polyhydric phenol, naphthol and aldehydes is used without particular limitation.
- the phenolic hydroxyl group contained in these phenolic resins can easily undergo an addition reaction with the epoxy group of the epoxy resin by heating to form a cured product having high impact resistance.
- Phenol resins include phenol novolak resin, o-cresol novolak resin, p-cresol novolak resin, t-butylphenol novolak resin, dicyclopentadiene cresol resin, polyparavinylphenol resin, bisphenol A type novolak resin, or modified thereof. A thing etc. are used preferably.
- a thermally activated latent epoxy resin curing agent can also be used as a curing agent.
- This curing agent is a type of curing agent that does not react with the epoxy resin at room temperature but is activated by heating at a certain temperature or more and reacts with the epoxy resin.
- an activation method a method of generating active species (anions and cations) by a chemical reaction by heating, a dispersion that is stably dispersed in the epoxy resin near room temperature, is compatible with and dissolved in the epoxy resin at a high temperature, and a curing reaction is performed.
- a method for starting a method for starting a curing reaction by elution at a high temperature with a molecular sieve encapsulated type curing agent, a method using a microcapsule, and the like.
- thermally active latent epoxy resin curing agent examples include various onium salts, high melting point active hydrogen compounds such as dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, and imidazole compounds.
- a curing accelerator or the like can be used as an auxiliary agent.
- a hardening accelerator which can be used for this invention
- a tertiary amine, imidazoles, a quaternary ammonium salt etc. can be used.
- imidazoles preferably used in the present invention include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate and the like. These may be used alone or in combination of two or more.
- Imidazoles are commercially available from Shikoku Kasei Kogyo Co., Ltd. under the trade names 2E4MZ, 2PZ-CN, 2PZ-CNS, for example.
- a filler may be blended.
- the filler include silica such as crystalline silica and synthetic silica, and inorganic filler such as alumina and glass balloon.
- silica such as crystalline silica and synthetic silica
- inorganic filler such as alumina and glass balloon.
- synthetic silica is preferable as the filler, and in particular, synthetic silica of the type from which the ⁇ -ray source that causes malfunction of the semiconductor device is removed as much as possible is optimal.
- the shape of the filler any of a spherical shape, a needle shape, and an amorphous type can be used, but a spherical filler capable of closest packing is particularly preferable.
- a coupling agent can be blended in order to improve interfacial bonding between different materials.
- a silane coupling agent is preferable as the coupling agent.
- silane coupling agents include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -mercaptopropyltrimethoxysilane, ⁇ -aminopropyltriethoxysilane, ⁇ -ureidopropyltriethoxysilane, N- ⁇ -aminoethyl- ⁇ - Examples include aminopropyltrimethoxysilane.
- the blending amount of the coupling agent is preferably 0.1 to 10 parts by weight with respect to a total of 100 parts by weight of the composition forming each of the dispersed phase and the continuous phase, from the effects of addition, heat resistance and cost. .
- the varnishing solvent it is preferable to use methyl ethyl ketone, acetone, methyl isobutyl ketone, 2-ethoxyethanol, toluene, butyl cellosolve, methanol, ethanol, 2-methoxyethanol or the like having a relatively low boiling point.
- the high boiling point solvent include dimethylacetamide, dimethylformamide, methylpyrrolidone, cyclohexanone and the like.
- the thickness of the adhesive layer 12 may be set as appropriate, but is preferably about 5 to 100 ⁇ m.
- the adhesive film 13 is not particularly limited, and has a sufficient adhesive force so that the semiconductor wafer does not peel when dicing the semiconductor wafer. When the chip is picked up after dicing, it can be easily removed from the adhesive layer 12. Any material may be used as long as it exhibits low adhesive strength so that it can be peeled off. For example, what provided the adhesive layer in the base film can be used conveniently.
- the base film of the adhesive film 13 can be used without particular limitation as long as it is a conventionally known base film. However, when a radiation curable material is used as the adhesive layer described later, the radiation transparency is used. It is preferable to use one having
- the materials include polyethylene, polypropylene, ethylene-propylene copolymer, polybutene-1, poly-4-methylpentene-1, ethylene-vinyl acetate copolymer, ethylene-ethyl acrylate copolymer, ethylene-acrylic.
- Homopolymers or copolymers of ⁇ -olefins such as methyl acid copolymers, ethylene-acrylic acid copolymers, ionomers or mixtures thereof, polyurethane, styrene-ethylene-butene or pentene copolymers, polyamide-polyols Listed are thermoplastic elastomers such as copolymers, and mixtures thereof.
- the base film may be a mixture of two or more materials selected from these groups, or may be a single layer or a multilayer. The thickness of the base film is not particularly limited and may be set as appropriate, but is preferably 50 to 200 ⁇ m.
- the resin used for the pressure-sensitive adhesive layer of the pressure-sensitive adhesive film 13 is not particularly limited, and a known chlorinated polypropylene resin, acrylic resin, polyester resin, polyurethane resin, epoxy resin, or the like used for the pressure-sensitive adhesive is used. can do. It is preferable to prepare a pressure-sensitive adhesive by appropriately mixing an acrylic pressure-sensitive adhesive, a radiation polymerizable compound, a photopolymerization initiator, a curing agent and the like with the resin of the pressure-sensitive adhesive layer.
- the thickness of the pressure-sensitive adhesive layer is not particularly limited and may be appropriately set, but is preferably 5 to 30 ⁇ m.
- a radiation-polymerizable compound can be blended in the pressure-sensitive adhesive layer to facilitate peeling from the adhesive layer 12 by radiation curing.
- the radiation polymerizable compound for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is used.
- trimethylolpropane triacrylate pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, 1,4-butylene glycol diacrylate, 1,6 hexanediol diacrylate Acrylate, polyethylene glycol diacrylate, oligoester acrylate, and the like are applicable.
- Urethane acrylate oligomers include polyester compounds or polyether compounds such as polyol compounds and polyisocyanate compounds (for example, 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 1,3-xylylene diene).
- the pressure-sensitive adhesive layer may be a mixture of two or more selected from the above resins.
- photopolymerization initiator for example, isopropyl benzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone, chlorothioxanthone, dodecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, benzyldimethyl ketal, ⁇ -hydroxycyclohexyl phenyl ketone, 2-hydroxymethylphenyl Propane or the like can be used.
- the blending amount of these photopolymerization initiators is preferably 0.01 to 5 parts by mass with respect to 100 parts by mass of the acrylic copolymer.
- the wafer processing tape 10 (10a, 10b) according to one embodiment of the present invention described above is formed by the first cut portion 26 even when the adhesive layer 12 is thin (less than 10 ⁇ m, particularly not more than 5 ⁇ m).
- the outer peripheral portion of the adhesive layer 12 (label-shaped adhesive portion 22) can be recognized by the sensor. That is, the wafer processing tape 10 (10a, 10b) according to one embodiment of the present invention described above has sensor recognizability even when the adhesive layer 12 is thin (10 ⁇ m or less, particularly 5 ⁇ m or less). Can be good.
- the adhesive layer 12 is thin (10 ⁇ m or less, particularly 5 ⁇ m or less) by using the wafer processing tape 10 (10a, 10b) according to one embodiment of the present invention.
- the productivity is prevented from being lowered, for example, the precut blade is not operated, and the presence or absence of the adhesive layer and the inspection accuracy from being unable to be inspected are prevented. be able to.
- FIGS. 1 (a), (b) and (c) are views for explaining a method for manufacturing a wafer processing tape according to an embodiment of the present invention for manufacturing the wafer processing tape 10 of the present invention.
- the surface of the adhesive layer 12 is formed on the first laminate 25 in which the adhesive layer 12 is laminated on the long release film 11 using a precut blade (not shown).
- An annular first cut portion 26 from 12a to the release film 11 is formed (step 1: S1).
- a punching process may be performed so as to form the first cut portion 26 using a mold instead of the precut blade.
- the first cut portion 26 is a laminated portion 27b having the first cut portion 26 in the laminated portion in which the release film 11 and the adhesive film 13 (23a) formed in Steps 3 to 5 described later are laminated.
- the transmittance difference C between the transmittance A having a wavelength of 600 to 700 nm and the transmittance B having a wavelength of 600 to 700 nm of the laminated portion 27a without the first notch 26 is formed to be 0.1% or more.
- the first cut portion 26 is formed so that the transmittance difference C is 0.6 to 1.3%. More preferably, the transmittance A is 75 to 95%.
- the ratio D is 13 to 92%. It is good to form so that it becomes.
- the transmittance B is determined by the type and thickness of the substrate film
- the transmittance difference C is determined by the depth of cut. How much the depth of cut is 0.1% or more depends on the type and thickness of the substrate film. It depends on the size. More specifically, the transmittance B of the base film is higher as it is more transparent in appearance, and the transmittance is lower as it is colored.
- the adhesive film 13 having an adhesive applied to the embossed surface has a high transmittance
- the adhesive film 13 having an adhesive applied to the mirror surface has a low transmittance.
- permeability is so low that a base film is thick. Therefore, in order to set the transmittance difference C to 0.1% or more, it is necessary to cut deeper into the release film 11 as the transmittance B is higher.
- Step 2 S2).
- step 3 a second laminated body 27 in which the adhesive film 13 is laminated so as to cover the entire surface of the label-shaped adhesive portion 22 and the exposed release film 11 is formed (step 3: S3).
- a pre-cut blade (not shown) is used for the laminated portion 27 c composed of the release film 11 and the adhesive film 13 of the second laminate 27.
- punching may be performed so as to form the second cut portion 28 and the third cut portion 29 using a mold instead of the precut blade.
- the formation of the second cut portion 28 and the formation of the third cut portion 29 are performed simultaneously, they may be formed separately. At that time, either may be formed first.
- the third cut portion 29 is formed in an annular shape surrounding the second cut portion 28. It forms so that it may become a notch part.
- the third cut portion 29 is not formed, and only the second cut portion 28 is formed.
- Step 5: S5 the unnecessary adhesive film 13 between the second cut portion 28 and the third cut portion 29 is peeled off from the release film 11 to be removed, thereby forming a label portion 23a and a peripheral portion 23b made of the adhesive film 13 ( Step 5: S5).
- the wafer processing tape 10b (see FIG. 3) does not have the peripheral portion 23b, the unnecessary adhesive film 13 outside the second cut portion 28 is peeled off from the release film 11 and removed. Then, only the label portion 23a made of the adhesive film 13 is formed.
- the above adhesive is applied onto a release film having a thickness of 38 ⁇ m and dried by heating at 110 ° C. for 1 minute to form a coating film in a B-stage state (curing intermediate state of thermosetting resin) having a thickness of 5 ⁇ m.
- An adhesive layer was formed on the release film and stored refrigerated.
- the prepared pressure-sensitive adhesive layer composition was applied to a base film so that the dry film thickness was 20 ⁇ m, and dried at 110 ° C. for 3 minutes to produce a pressure-sensitive adhesive film.
- the adhesive films four types of adhesive films 13A to 13D having different base film were prepared.
- the adhesive film 13A is an adhesive film using an ethylene-vinyl acetate copolymer base film having a thickness of 100 ⁇ m as the base film.
- the adhesive film 13B is an adhesive film using a high-density polyethylene film having a thickness of 110 ⁇ m as a base film.
- the adhesive film 13C is an adhesive film using a high-density polyethylene film having a thickness of 100 ⁇ m as a base film.
- the pressure-sensitive adhesive film 13D is a pressure-sensitive adhesive film using a base film composed of two layers of a high-density polyethylene layer having a thickness of 100 ⁇ m, a random copolymer polypropylene, and a styrene / butadiene copolymer layer. .
- the laminated portion corresponding to the position where the first cut portion is located (FIG. 1 (c)) using an optical sensor.
- the first cut portion was recognized, and based on the recognized first cut portion, a circular precut process with a diameter of 290 mm was attempted concentrically with the adhesive layer.
- the optical sensor is not particularly limited as long as it can detect light in the wavelength range of 290 to 850 nm.
- Table 1 shows the evaluation results of the sensor recognizability for the wafer processing tapes according to Examples 1 to 8
- Table 2 shows the evaluation results of the sensor recognizability for the wafer processing tapes according to Comparative Examples 1 to 3. Indicated.
- the tapes for wafer processing according to Examples 1 to 5 use the above-mentioned adhesive film 13A as an adhesive film, and set the depth of the first cut portion formed in the release film at the time of primary precut processing to the precut blade.
- This is a wafer processing tape whose transmittance is adjusted by changing the indentation pressure (clearance).
- the transmittance was adjusted by using the above-mentioned adhesive film 13C as an adhesive film in Example 6, and using the above-mentioned adhesive film 13D as an adhesive film in Example 7. This is a wafer processing tape.
- the tape for wafer processing according to Example 8 uses the above-mentioned adhesive film 13B as an adhesive film, and further presses the depth of the first cut portion formed in the release film at the time of the primary precut processing into the precut blade.
- This is a wafer processing tape whose transmittance is adjusted by changing the pressure (clearance) and processing it shallowly.
- the tape for wafer processing according to Comparative Example 1 uses the above-mentioned adhesive film 13D as an adhesive film, and further presses the depth of the first cut portion formed in the release film at the time of the primary precut processing into the precut blade. This is a wafer processing tape whose transmittance is adjusted by changing the pressure (clearance) and processing it shallowly.
- the tape for wafer processing according to Comparative Example 2 uses the above-mentioned adhesive film 13A as an adhesive film, and determines the depth of the first cut portion formed in the release film during the primary precut processing by the pressing pressure of the precut blade. This is a wafer processing tape whose transmittance is adjusted by changing (clearance).
- the tape for wafer processing according to Comparative Example 3 uses the above-mentioned adhesive film 13B as an adhesive film, and further presses the depth of the first cut portion formed in the release film at the time of the primary precut processing into the precut blade.
- This is a wafer processing tape whose transmittance is adjusted by processing deeper by changing the pressure (clearance).
- the optical sensor is used to perform the recognition operation as described above (in the case of the wafer processing tapes of Examples 1 to 8, the first In the case of the wafer processing tapes of Comparative Examples 1 to 3 in which the cut portion is recognized, the operation of recognizing the laminated portion in which the release film, the adhesive layer, and the adhesive film are laminated) is performed in Examples 1 to 8 and Performed 50 times for each of the wafer processing tapes of Comparative Examples 1 to 3, and investigated the ratio of the number of times the secondary pre-cutting blade was rotated to form the second cut portion at a predetermined position to evaluate the sensor recognizability. It was.
- Table 1 the number of times of recognition indicates the number of times that the secondary pre-cut blade has rotated and the second cut portion can be formed at a predetermined position, and the success rate is the ratio of the number of times of recognition during 50 recognition operations. (%).
- the wafer processing tapes of Examples 1 to 8 were able to form the second cut portion in the secondary precut processing 45 to 50 times in 50 recognition operations. That is, the success rate was 90 to 100%. In particular, the wafer processing tapes of Examples 2 to 4 had a success rate of 100%.
- the success rate was 10%.
- the release film was broken during the production of the wafer processing tape, and the wafer processing tape could not be manufactured. Therefore, the transmittance A, the transmittance difference C, and the sensor recognizability cannot be measured.
- the second cut in the secondary precut processing step could be formed only 5 times during the 50 recognition operations. That is, the success rate was 10%.
- the laminated portion corresponding to the position of the first cut portion (FIG. 1 ( The transmittance A of 600 to 700 nm wavelength of the laminated portion 27b) of c) and the transmittance B of 600 to 700 nm wavelength of the laminated portion (the laminated portion 27a of FIG. 1C) corresponding to the position where there is no first cut portion.
- the wafer processing tapes 10 according to Examples 1 to 8 formed so that the transmittance difference C was 0.1% or more had good label recognizability and precut processability.
- the wafer processing tape 10 according to Examples 2 to 4 formed so that the transmittance difference C was 0.6 to 1.3% had good label recognizability and precut processability. .
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
なお、600~700nmとは、600nm以上700nm以下のことである。
図1(a)は、本発明の一実施形態に係るウエハ加工用テープ10の斜視図であり、図1(b)は同平面図、図1(c)は同断面図である。
離型フィルム11は、接着剤層12の取り扱い性を良くする目的で用いられる。離型フィルム11は、面11aにラベル形状接着部22の外周に沿った環状の第1切り込み部26が形成されている。
離型フィルム11の膜厚は、通常は5~300μm、好ましくは10~200μm、特に好ましくは20~150μm程度である。
また、透過率Aが75~95%となるように形成されることが更に好ましい。これは、透過率Aが75%未満または95%より大きいと十分なセンサ認識性が得られないためである。
接着剤層12は、半導体ウエハ等が貼合されダイシングされた後、半導体チップをピックアップする際に、半導体チップ裏面に付着しており、チップを基板やリードフレームに固定する際の接着剤として使用されるものである。
接着剤層12の厚さは適宜設定してよいが、5~100μm程度が好ましい。
粘着フィルム13としては、特に制限はなく、半導体ウエハをダイシングする際には半導体ウエハが剥離しないように十分な粘着力を有し、ダイシング後にチップをピックアップする際には容易に接着剤層12から剥離できるよう低い粘着力を示すものであればよい。例えば、基材フィルムに粘着剤層を設けたものを好適に使用できる。
基材フィルムの厚さは、特に限定されるものではなく、適宜に設定してよいが、50~200μmが好ましい。
粘着剤層の樹脂には、アクリル系粘着剤、放射線重合性化合物、光重合開始剤、硬化剤等を適宜配合して粘着剤を調製することが好ましい。粘着剤層の厚さは特に限定されるものではなく適宜に設定してよいが、5~30μmが好ましい。
具体的には、トリメチロールプロパントリアクリレート、ペンタエリスリトールトリアクリレート、ペンタエリスリトールテトラアクリレート、ジペンタエリスリトールモノヒドロキシペンタアクリレート、ジペンタエリスリトールヘキサアクリレート、1,4-ブチレングリコールジアクリレート、1,6ヘキサンジオールジアクリレート、ポリエチレングリコールジアクリレートや、オリゴエステルアクリレート等が適用可能である。
粘着剤層には、上記の樹脂から選ばれる2種以上が混合されたものでもよい。
図4及び図5は、本発明のウエハ加工用テープ10を製造するための本発明の一実施形態に係るウエハ加工用テープの製造方法を説明するための図である。
次に、本発明の実施例について説明するが、本発明はこれら実施例に限定されるものではない。
(接着剤層の形成)
エポキシ樹脂としてクレゾールノボラック型エポキシ樹脂(エポキシ当量197、分子量1200、軟化点70℃)50質量部、シランカップリング剤としてγ-メルカプトプロピルトリメトキシシラン1.5質量部、γ-ウレイドプロピルトリエトキシシラン3質量部、平均粒径16nmのシリカフィラー30質量部からなる組成物に、シクロヘキサノンを加えて攪拌混合し、更にビーズミルを用いて90分混練した。
溶媒のトルエン400g中に、n-ブチルアクリレート128g、2-エチルヘキシルアクリレート307g、メチルメタアクリレート67g、メタクリル酸1.5g、重合開始剤としてベンゾイルペルオキシドの混合液を、適宜、滴下量を調整し、反応温度および反応時間を調整し、官能基をもつ化合物(1)の溶液を得た。
冷蔵保管していた上述の膜厚が5μmの接着剤層が形成された厚さ38μmの離型フィルムを常温に戻し、接着剤層の表面から離型フィルムへ達するように第1切り込み部を形成して直径220mmの円形プリカット加工を行った(一次プリカット加工)。その後、接着剤層の不要部分を除去し、粘着フィルムと室温でラミネートした。次いで、貼り合わせた接着剤層の外側の粘着フィルムに対して、離型フィルムへ達するように第2切り込み部を形成して接着剤層と同心円状(ウエハリングフレーム形状に合わせた形状)に直径290mmの円形プリカット加工を試みた(二次プリカット加工)。こうして実施例1~8に係るウエハ加工用テープの作製を試みた。
比較例1~3に係るウエハ加工用テープは、上述した実施例1~8に係るウエハ加工用テープの形成と同様にして作製を試みた。また、二次プリカット加工を試みる際の認識方法も、上述した実施例1~8に係るウエハ加工用テープにおける二次プリカット加工を試みる際の認識方法と同様である。
実施例6及び7に係るウエハ加工用テープは、実施例6では粘着フィルムとして上記の粘着フィルム13Cを用いて、実施例7では粘着フィルムとして上記の粘着フィルム13Dを用いて、透過率を調整したウエハ加工用テープである。
実施例8に係るウエハ加工用テープは、粘着フィルムとして上記の粘着フィルム13Bを用い、更に、一次プリカット加工の際の離型フィルムに形成される第1切り込み部の深さを、プリカット刃の押し込み圧力(クリアランス)を変更して浅めに加工することによって透過率を調整したウエハ加工用テープである。
比較例2に係るウエハ加工用テープは、粘着フィルムとして上記の粘着フィルム13Aを用いて、一次プリカット加工の際の離型フィルムに形成される第1切り込み部の深さを、プリカット刃の押し込み圧力(クリアランス)を変更することにより透過率を調整したウエハ加工用テープである。
比較例3に係るウエハ加工用テープは、粘着フィルムとして上記の粘着フィルム13Bを用い、更に、一次プリカット加工の際の離型フィルムに形成される第1切り込み部の深さを、プリカット刃の押し込み圧力(クリアランス)を変更して深めに加工することによって透過率を調整したウエハ加工用テープである。
島津製作所製分光光度計UV3101PCを用いて、離型フィルムと粘着フィルムとが積層された積層部において、第1切り込み部がある積層部の透過率A(%)と第1切り込み部2の無い積層部の透過率B(%)とを、実施例1~8及び比較例1~3に係るウエハ加工用テープについて測定した。尚、測定した透過率は600~700nm波長の透過率である。
一次プリカットによって離型フィルムに付けられた第1切り込み部を適当なサイズに切り出し、これをエポキシ系樹脂等の樹脂で埋め固め、凝固した同樹脂に埋め込まれた状態の供試片を研磨して、光学顕微鏡等を用いて第1切り込み部の深さを測定観察した。その後、測定した第1切り込み部の深さと離型フィルムの全厚さとから割合Dを算出した。
実施例1~8及び比較例1~3のウエハ加工用テープを作製する際に光学センサを用いて、上述したような認識作業(実施例1~8のウエハ加工用テープの場合は、第1切り込み部を認識し、比較例1~3のウエハ加工用テープの場合は、離型フィルムと接着剤層と粘着フィルムとが積層された積層部を認識する作業)を、実施例1~8及び比較例1~3のウエハ加工用テープにおいてそれぞれ50回行い、二次プリカット刃が回転して、所定の位置に第2切り込み部を形成できた回数の割合を調べ、センサ認識性の評価を行った。ここで、表1において、認識回数は、二次プリカット刃が回転して、所定の位置に第2切り込み部を形成できた回数を示し、成功率は、認識作業50回中の認識回数の割合(%)を示したものである。
11:離型フィルム
12:接着剤層
13:粘着フィルム
20:ダイシングダイボンディングフィルム
22:ラベル形状接着部
23a:ラベル部
23b:周辺部
25:第1積層体
26:第1切り込み部
27:第2積層体
28:第2切り込み部
29:第3切り込み部
Claims (8)
- 長尺の離型フィルムと、
前記離型フィルム上に設けられた所定の平面形状を有する1個以上の接着剤層と、
前記接着剤層をそれぞれ覆い、かつ、当該接着剤層の周囲で前記離型フィルムに接触するように設けられた1個以上の粘着フィルムと、
を備えるウエハ加工用テープであって、
前記離型フィルムは、当該離型フィルムの前記接着剤層が積層された面に、当該接着剤層の外周に沿った環状の切り込み部が形成されており、
前記離型フィルムと前記粘着フィルムとが積層された積層部において、前記切り込み部のある位置に対応した前記積層部の600~700nm波長の透過率Aと前記切り込み部の無い位置に対応した前記積層部の600~700nm波長の透過率Bとの透過率差C(=A-B)が、0.1%以上であることを特徴とするウエハ加工用テープ。 - 前記透過率差Cが0.6~1.3%であることを特徴とする請求項1に記載のウエハ加工用テープ。
- 前記透過率Aが75~95%であることを特徴とする請求項1または2に記載のウエハ加工用テープ。
- 前記離型フィルム上に前記粘着フィルムの外側を囲むように設けられた、前記粘着フィルムからなる周辺部を備えていることを特徴とする請求項1乃至3のいずれか1項に記載のウエハ加工用テープ。
- (a)長尺の離型フィルム上に所定の平面形状を有する複数個の接着剤層が設けられ、前記離型フィルムと前記接着剤層とがこの順に積層された接着フィルム上に、前記接着剤層を覆い、かつ、前記接着剤層の周囲で前記離型フィルムに接触するように、粘着フィルムを積層する工程と、
(b)前記工程(a)によって形成された前記接着フィルムと前記粘着フィルムとから構成される積層体において、前記離型フィルムと前記粘着フィルムとからなる積層部に、前記粘着フィルムの表面から前記離型フィルムに達するまでの、それぞれの前記接着剤層を囲む環状の第2の切り込み部を複数個形成する工程と、
を備えるウエハ加工用テープの製造方法であって、
前記工程(a)の前に、
(c)前記離型フィルム上に所定の平面形状を有する複数個の前記接着剤層を設けるときに、当該接着剤層の外周に沿った環状の第1の切り込み部を、前記離型フィルム上に形成する工程を備え、
前記工程(b)は、前記離型フィルムと前記粘着フィルムとが積層された前記積層部において、前記切り込み部のある位置に対応した前記積層部の600~700nm波長の透過率Aと前記離型フィルムと前記切り込み部の無い位置に対応した前記積層部の600~700nm波長の透過率Bとの透過率差C(=A-B)に基づいて、前記第1の切り込み部を認識し、認識した前記第1の切り込み部に基づいて前記接着剤層を囲む環状の第2の切り込み部を形成することを特徴とするウエハ加工用テープの製造方法。 - 前記工程(c)は、前記透過率差Cが0.1%以上となるように前記第1の切り込み部を形成することを特徴とする請求項5に記載のウエハ加工用テープの製造方法。
- 前記工程(c)は、前記透過率差Cが0.6~1.3%となるように前記第1の切り込み部を形成することを特徴とする請求項5に記載のウエハ加工用テープの製造方法。
- 前記工程(b)の替わりに、(d)前記工程(a)によって形成された前記接着フィルムと前記粘着フィルムとから構成される前記積層体において、前記離型フィルムと前記粘着フィルムとからなる前記積層部に、前記粘着フィルムの表面から前記離型フィルムに達するまでの、それぞれの前記接着剤層を囲む環状の前記第2の切り込み部を複数個形成するとともに、前記第2の切り込み部の外側に第3の切り込み部を形成する工程を備えていることを特徴とする請求項5乃至7のいずれか1項に記載のウエハ加工用テープの製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180031440.8A CN102959689B (zh) | 2010-10-06 | 2011-10-04 | 晶片加工用胶带及其制造方法 |
KR1020137000107A KR101471792B1 (ko) | 2010-10-06 | 2011-10-04 | 웨이퍼 가공용 테이프 및 그의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010-226254 | 2010-10-06 | ||
JP2010226254A JP5408571B2 (ja) | 2010-10-06 | 2010-10-06 | ウエハ加工用テープ及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2012046737A1 true WO2012046737A1 (ja) | 2012-04-12 |
Family
ID=45927732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2011/072884 WO2012046737A1 (ja) | 2010-10-06 | 2011-10-04 | ウエハ加工用テープ及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5408571B2 (ja) |
KR (1) | KR101471792B1 (ja) |
CN (1) | CN102959689B (ja) |
TW (1) | TWI541856B (ja) |
WO (1) | WO2012046737A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014028907A (ja) * | 2011-09-16 | 2014-02-13 | Hitachi Chemical Co Ltd | 粘着フィルム及び粘着フィルムの製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102171423B1 (ko) * | 2013-10-21 | 2020-10-29 | 린텍 가부시키가이샤 | 수지막 형성용 시트 |
JP7280661B2 (ja) * | 2017-12-28 | 2023-05-24 | 日東電工株式会社 | ダイシングダイボンドフィルム |
CN110144175A (zh) * | 2018-02-13 | 2019-08-20 | 日东电工株式会社 | 粘合片以及粘合片层叠体 |
JP7304143B2 (ja) * | 2018-02-13 | 2023-07-06 | 日東電工株式会社 | 粘着シートおよび粘着シート積層体 |
CN115315785A (zh) * | 2020-03-27 | 2022-11-08 | 琳得科株式会社 | 半导体装置制造用片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005350520A (ja) * | 2004-06-08 | 2005-12-22 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
JP2006111727A (ja) * | 2004-10-14 | 2006-04-27 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
JP2007227575A (ja) * | 2006-02-22 | 2007-09-06 | Furukawa Electric Co Ltd:The | レーザーダイシング用ダイシングダイボンドシート |
JP2009059917A (ja) * | 2007-08-31 | 2009-03-19 | Nitto Denko Corp | 半導体装置製造用の接着シート、及びそれを用いた半導体装置の製造方法 |
JP2011111530A (ja) * | 2009-11-26 | 2011-06-09 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
-
2010
- 2010-10-06 JP JP2010226254A patent/JP5408571B2/ja active Active
-
2011
- 2011-10-04 CN CN201180031440.8A patent/CN102959689B/zh active Active
- 2011-10-04 KR KR1020137000107A patent/KR101471792B1/ko active IP Right Grant
- 2011-10-04 WO PCT/JP2011/072884 patent/WO2012046737A1/ja active Application Filing
- 2011-10-06 TW TW100136283A patent/TWI541856B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005350520A (ja) * | 2004-06-08 | 2005-12-22 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
JP2006111727A (ja) * | 2004-10-14 | 2006-04-27 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
JP2007227575A (ja) * | 2006-02-22 | 2007-09-06 | Furukawa Electric Co Ltd:The | レーザーダイシング用ダイシングダイボンドシート |
JP2009059917A (ja) * | 2007-08-31 | 2009-03-19 | Nitto Denko Corp | 半導体装置製造用の接着シート、及びそれを用いた半導体装置の製造方法 |
JP2011111530A (ja) * | 2009-11-26 | 2011-06-09 | Hitachi Chem Co Ltd | 接着シート及びその製造方法、並びに、半導体装置の製造方法及び半導体装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014028907A (ja) * | 2011-09-16 | 2014-02-13 | Hitachi Chemical Co Ltd | 粘着フィルム及び粘着フィルムの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101471792B1 (ko) | 2014-12-10 |
TW201222624A (en) | 2012-06-01 |
JP2012080023A (ja) | 2012-04-19 |
TWI541856B (zh) | 2016-07-11 |
JP5408571B2 (ja) | 2014-02-05 |
KR20130091719A (ko) | 2013-08-19 |
CN102959689B (zh) | 2016-01-13 |
CN102959689A (zh) | 2013-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4876451B2 (ja) | 接着シート | |
JP4360653B2 (ja) | ウエハ加工用テープ | |
KR100915491B1 (ko) | 접착시트 및 그 제조방법, 및, 반도체장치의 제조방법 및 반도체장치 | |
JP5408571B2 (ja) | ウエハ加工用テープ及びその製造方法 | |
JP4934730B2 (ja) | ウエハ加工用テープ及びその製造方法 | |
JP5733049B2 (ja) | 接着シート、接着シートの製造方法、接着シートロール、半導体装置の製造方法、及び半導体装置 | |
WO2012056511A1 (ja) | 接着フィルム及びウエハ加工用テープ | |
TW201139604A (en) | Tape for wafer processing | |
JP2010260897A (ja) | 接着フィルム及びウエハ加工用テープ | |
JP5716322B2 (ja) | ウェハ加工用テープ | |
JP2011199307A (ja) | 半導体装置の製造方法 | |
JP2019125666A (ja) | 接着シートロール及びその製造方法、並びに、半導体装置の製造方法 | |
JP2009124127A (ja) | 接着シート及びその製造方法並びに半導体装置の製造方法及び半導体装置 | |
JP5370416B2 (ja) | 接着シート | |
JP2012049474A (ja) | ウェハ加工用テープ | |
JP4845063B2 (ja) | ウエハ加工用テープ及びその製造方法 | |
JP5957795B2 (ja) | 接着シートロール及び半導体装置 | |
JP5453894B2 (ja) | 接着シート | |
TWI445796B (zh) | Followed by film and wafer processing tape | |
JP5370414B2 (ja) | 接着シートの製造方法 | |
JP2016157859A (ja) | ウエハ加工用テープ | |
JP2013001862A (ja) | 接着シート、半導体装置の製造方法及び半導体装置 | |
JP5370415B2 (ja) | 接着シート | |
JP2011126934A (ja) | 接着シート、半導体装置の製造方法及び半導体装置 | |
TW201633388A (zh) | 晶圓加工用膠帶 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201180031440.8 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 11830669 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20137000107 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 11830669 Country of ref document: EP Kind code of ref document: A1 |