WO2011045893A1 - 光学素子の製造方法 - Google Patents
光学素子の製造方法 Download PDFInfo
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- WO2011045893A1 WO2011045893A1 PCT/JP2010/005615 JP2010005615W WO2011045893A1 WO 2011045893 A1 WO2011045893 A1 WO 2011045893A1 JP 2010005615 W JP2010005615 W JP 2010005615W WO 2011045893 A1 WO2011045893 A1 WO 2011045893A1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3558—Poled materials, e.g. with periodic poling; Fabrication of domain inverted structures, e.g. for quasi-phase-matching [QPM]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
- G02F1/3544—Particular phase matching techniques
- G02F1/3548—Quasi phase matching [QPM], e.g. using a periodic domain inverted structure
Definitions
- the present invention relates to a method for manufacturing an optical element having a domain-inverted structure formed by applying an electric field. Specifically, formation of an optical element having a polarization inversion region used for a wavelength conversion element, a deflection element, an optical switch, a phase modulator, etc. constituting a coherent light source used in processing, optical information processing, optical applied measurement control field, etc. It is about the method.
- a periodic polarization inversion region (a polarization inversion structure) can be formed inside the ferroelectric material.
- the polarization inversion region formed in this way is an optical frequency modulator using surface acoustic waves, a wavelength conversion element using polarization inversion of nonlinear polarization, or an optical deflector using a prism shape or lens shape inversion structure. It is used for etc.
- a wavelength conversion element having a very high conversion efficiency when an input fundamental wave is converted into wavelength converted light can be produced.
- this wavelength conversion element is used to convert the wavelength of light from semiconductor lasers, fiber lasers, and solid-state lasers, a high-power laser light source that can be applied to processing, printing, optical information processing, optical applied measurement control, etc. be able to.
- One method for forming a periodic domain-inverted region is to form a periodic domain-inverted region by utilizing the fact that the spontaneous polarization of a ferroelectric substance is inverted by an electric field. Specifically, there are a method of irradiating the ⁇ Z plane of the substrate cut out along the Z axis with an electron beam and a method of irradiating the + Z plane with positive ions. In any case, a domain-inverted region having a depth of several hundreds ⁇ m is formed by an electric field formed by irradiated charged particles. As another method, it is known to form a deep domain inversion region having a high aspect ratio by forming a periodic electrode on the + Z plane and a planar electrode on the ⁇ Z plane and applying a direct current or a pulsed electric field. Yes.
- various additional methods have been proposed in order to improve the characteristics of the wavelength conversion element.
- heat treatment is performed on the ferroelectric substrate at 200 ° C. or higher to electrically connect the front and back surfaces of the substrate.
- a method of short-circuiting is known (for example, see Patent Document 1). Thereby, the disappearance of the domain-inverted region can be prevented, the transparency in the substrate can be increased, and the optical loss can be reduced.
- a method of covering the entire surface of the substrate with a conductive material and performing a heat treatment is known (for example, see Patent Document 2).
- a method of manufacturing a low-loss optical waveguide by performing high-temperature annealing in order to make the refractive index distribution uniform after polarization inversion is formed (see, for example, Patent Document 3).
- high-temperature heat treatment is indispensable for producing a domain-inverted structure used for a practical wavelength conversion element or the like.
- the present invention solves the above-described conventional problems, and provides a method for manufacturing an optical element that does not lower the conversion efficiency even when a high-output fundamental wave is input to an optical element using a polarization-reversed structure subjected to heat treatment.
- the purpose is to do.
- an optical element manufacturing method of the present invention includes an electrode forming step of forming an electrode by forming a metal film on the + Z plane and the ⁇ Z plane of a ferroelectric substrate, and the + Z plane.
- a polarization inversion forming step to be formed a surface treatment step for removing the surface layer of the + Z plane and the ⁇ Z plane of the electrode, the periodic electrode, and the ferroelectric substrate, and a ferroelectric substrate from which the surface layer has been deleted And an annealing process for applying the heat.
- an increase in spontaneous polarization which is a cause of distortion inside the optical element having a polarization inversion structure manufactured by performing a thermal annealing process, is suppressed. Therefore, an optical element can be obtained in which distortion inside the optical element is suppressed, and even if the input power of the fundamental wave is increased, the fundamental wave absorbed in the optical element and its wavelength-converted light are suppressed, and conversion efficiency does not decrease. Can do.
- Ferroelectrics have a charge bias in the crystal due to spontaneous polarization. By applying an electric field opposite to such spontaneous polarization, the direction of spontaneous polarization in the ferroelectric can be changed.
- the direction of spontaneous polarization varies depending on the type of crystal (material).
- a crystal of a LiTa (1-x) NbxO 3 (0 ⁇ x ⁇ 1) substrate that is LiTaO 3 , LiNbO 3 or the like or a mixed crystal thereof has spontaneous polarization only in the Z-axis direction. For this reason, in these crystals, there are only two polarizations in the + direction along the Z axis or in the negative direction. By applying an electric field, the polarization of these crystals rotates 180 degrees and turns in the opposite direction. This phenomenon is called polarization reversal.
- the electric field necessary for causing the polarization inversion is called a polarization inversion threshold electric field.
- an electric field of about 20 kV / mm at room temperature and about 5 kV / mm for MgO: LiNbO 3 is required. It is.
- a method for manufacturing a wavelength conversion element will be described as an optical element having a periodically poled structure inside a ferroelectric substrate.
- FIG. 1 is a diagram illustrating a method for manufacturing an optical element of the present invention, taking as an example the production of a wavelength conversion element.
- the method for manufacturing an optical element of the present invention includes an electrode forming step, a periodic electrode forming step, a polarization inversion forming step, a surface treatment step, and an annealing step.
- FIG. 1A shows an electrode forming process.
- reference numeral 1 denotes a ferroelectric substrate.
- a 1 mm thick Z-plate MgO: LiNbO 3 substrate is used.
- an electrode 2 made of a metal film for polarization inversion formation is formed on the + Z plane and the ⁇ Z plane of the ferroelectric substrate 1 made of an MgO: LiNbO 3 substrate.
- the electrode 2 having a thickness of 100 nm is formed by sputtering a Ta film.
- FIG. 1B shows a periodic electrode forming process.
- the right view of FIG. 1B is a view of the + Z plane viewed from above, and the left view is a cross-sectional view taken along the line XX ′ of the right view.
- the periodic electrode 3 is manufactured by processing the electrode 2 on the + Z plane into a comb shape so that the domain-inverted structure is periodically formed on the + Z plane.
- the periodic electrode 3 is produced by photolithography and dry etching. Further, in order to convert the wavelength of near infrared light (wavelength 1064 nm) to green light (wavelength 532 nm), the electrode period of the periodic electrode 3 was set to 7 ⁇ m.
- the period of the electrode (in practice, the period of polarization inversion to be produced) is determined by the refractive index and phase matching wavelength of the near-infrared light and green light of the MgO: LiNbO 3 substrate.
- FIG. 1C shows a polarization inversion formation process.
- a polarization inversion 5 is formed by applying a pulse electric field equal to or greater than the polarization inversion threshold electric field by the pulse voltage application system 4 between the electrodes of the + Z plane and the ⁇ Z plane.
- the polarization inversion threshold electric field can be reduced to 5 kV / mm or less. Therefore, in the present embodiment, the ferroelectric substrate 1 is put in an insulating liquid, and an electric field is applied in the insulating liquid at an insulating liquid temperature of 100 ° C.
- the polarization inversion threshold electric field is 5 kV / mm or less by heating the substrate, here, the pulse electric field is 6 kV / mm and the pulse width is 1 msec with a margin.
- the polarization inversion 5 is formed from the + Z plane to the ⁇ Z plane of the substrate.
- FIG. 1D shows a surface treatment process.
- the left figure of FIG.1 (d) is sectional drawing of the wavelength conversion element 6 before a surface treatment process
- the right figure is sectional drawing of the wavelength conversion element 6 after a surface treatment process.
- the surfaces of the electrode 2, the periodic electrode 3, and the wavelength conversion element 6 are removed.
- the + Z plane and the ⁇ Z plane of the wavelength conversion element 6 are polished by mechanical polishing with diamond coating grains, and the layers up to about 100 nm from the substrate surface are removed including the electrode 2 and the periodic electrode 3.
- This surface treatment process has not been performed conventionally. Although details will be described later, the conversion efficiency of the wavelength conversion element can be improved by performing this surface treatment step before the high temperature annealing step.
- the electrode and substrate surface are removed by polishing.
- the present invention is not limited to polishing, and the same effect can be obtained by removing the electrode and substrate surface by dry etching or wet etching. Any method may be used for dry etching as long as both the electrode and the substrate can be etched. In the wet etching, any solution may be used as long as it can etch the electrode and the substrate regardless of acid or alkali.
- FIG. 1 (e) shows an annealing process.
- the annealing process was performed for 1 hour in a 400 ° C. environment using the wavelength conversion element 6 using an oven 7 (manufactured by Enomoto Kasei Co., Ltd.) that can be heated at a high temperature.
- FIG. 2 is a diagram for comparing the optical output characteristics of the optical element of the prior art and the first embodiment.
- the relationship of output power is shown.
- the vertical axis represents the wavelength converted light output power, and the horizontal axis represents the fundamental wave input power.
- the dotted line indicates the characteristics of the wavelength conversion element manufactured by the conventional manufacturing method, and the solid line indicates the characteristics of the wavelength conversion element manufactured by the manufacturing method of the present invention.
- the fundamental wave input exceeds 5 W, the increase rate of the wavelength-converted light is reduced.
- the input power is reduced until the fundamental wave input reaches 10 W.
- the output of wavelength converted light increases in proportion to the square. That is, when a wavelength conversion element is manufactured by the manufacturing method of the present invention, a decrease in conversion efficiency is suppressed. This is an effect obtained by performing a surface treatment step before the annealing treatment step and removing the surface layer of the + Z plane and the ⁇ Z plane of the wavelength conversion element. Next, the effect of removing the surface layer will be described.
- FIG. 3 is a diagram showing a change in spontaneous polarization depending on the presence / absence of an electrode
- FIG. 3 (a) is a diagram showing a change in spontaneous polarization before and after the annealing step in a wavelength conversion element manufactured by a conventional method.
- the upper diagram of FIG. 3A shows the spontaneous polarization before the annealing step
- the lower diagram shows the spontaneous polarization during the annealing step.
- the direction indicated by the arrow in the figure is the direction of spontaneous polarization, and the length of the arrow is the magnitude of spontaneous polarization.
- the electrode 2 and the periodic electrode 3 are electrodes used for polarization inversion formation.
- the spontaneous polarization 8 increases and becomes the spontaneous polarization 9 during annealing.
- the ferroelectric substrate 1 is solid, pyroelectric charges are generated and accumulated on the surface so as to face the spontaneous polarization 9 during annealing. This phenomenon is generally called a pyroelectric effect, and occurs to keep the ferroelectric crystal electrically neutral.
- a large number of the boundary surfaces are adjacent to each other, so that crystal distortion increases.
- the light absorption of the wavelength conversion element increases due to the crystal distortion, and the conversion efficiency of the wavelength conversion element decreases.
- FIG. 3B is a diagram showing changes in spontaneous polarization during a high-temperature annealing step in the wavelength conversion element manufactured by the manufacturing method of the present invention.
- the upper diagram of FIG. 3B shows the spontaneous polarization before the high temperature annealing step
- the lower diagram shows the spontaneous polarization during the high temperature annealing step.
- the electrode 2, the periodic electrode 3, and the substrate surface are removed before the annealing step. Since the electrode 2 and the periodic electrode 3 do not exist on the surface 14 of the ferroelectric substrate 1 made of the MgO: LiNbO 3 substrate, the pyroelectric charge 10 generated by the pyroelectric effect is accumulated on the surface 14 of the ferroelectric substrate 1.
- FIG. 4 is a diagram showing a change in the light output characteristics depending on the polishing depth, and shows the relationship between the fundamental wave input power and the output power of the wavelength-converted light when the polishing depth is changed.
- the polishing depth of the graph shown in the figure is 100 nm for the solid line, 8 nm for the broken line, and 5 nm for the dotted line. As the polishing depth is reduced, the conversion efficiency decreases. This becomes significant when the polishing depth is 10 nm or less.
- FIG. 5 is a cross-sectional view of the optical element of the present invention before and after the surface treatment process, and is a cross-sectional view of the wavelength conversion element before and after the surface treatment process by polishing.
- a surface-modified layer 12 is generated on the surface layer of the ferroelectric substrate 1 before the surface treatment process by mirror polishing or electrode film formation during the wafer fabrication of the ferroelectric substrate 1. ing. Since the surface-modified layer 12 contains a large amount of conductive impurities, the pyroelectric charge generated by the pyroelectric effect described above moves through this layer for a short distance.
- the movement of the pyroelectric charge is not limited to the large charge movement which is simply caused by the decrease in the surface resistance described with reference to FIG. 3, but the movement of the pyroelectric charge caused by the surface-modified layer 12 is also caused by the expansion and contraction of the spontaneous polarization during annealing. Is not suppressed, and substrate distortion occurs at the interface where the spontaneous polarization is reversed. This charge transfer by the surface altered layer 12 is generally called DC drift.
- a wavelength conversion element having a short polarization inversion period of several microns it affects the increase in light absorption of the polarization inversion part. Therefore, as shown in FIG.
- the surface resistivity means a resistance value per unit area of the + Z plane and the ⁇ Z plane of the ferroelectric substrate, and the unit is represented by ⁇ / ⁇ .
- the surface resistivity is 10 5 ⁇ / ⁇ or more.
- a wavelength conversion element having a surface resistivity of 10 3 ⁇ / ⁇ , 10 4 ⁇ / ⁇ , or 10 5 ⁇ / ⁇ or more is manufactured in this way, and output characteristics are compared. .
- FIG. 6 is a diagram showing the surface resistivity dependency of the light output characteristics, and shows the relationship between the fundamental wave input power and the output power of the wavelength converted light of the wavelength conversion element manufactured by changing the surface resistivity.
- a + Z plane and a ⁇ Z plane were polished at a depth of 100 nm from the substrate surface by mechanical polishing with diamond coating grains.
- the conversion efficiency tends to decrease as the surface resistivity decreases. That is, when the surface resistivity is 10 3 ⁇ / ⁇ , 10 4 ⁇ / ⁇ , light absorption increases and conversion efficiency decreases. However, when the surface resistivity was 10 5 ⁇ / ⁇ or more, no reduction in conversion efficiency was observed.
- the annealing process be performed with the substrate placed on an insulator. Therefore, it is possible to suppress an increase in spontaneous polarization as the pyroelectric charge moves through the material in contact with the substrate, and it is possible to suppress a decrease in conversion efficiency of the wavelength conversion element.
- the heat treatment temperature in the annealing process is also important. In order to reduce the light absorption and prevent the conversion efficiency from being lowered, it is necessary to perform an annealing process at 300 ° C. or higher. In the Mg-doped LiNbO 3 substrate of this embodiment, the annealing process was performed at 400 ° C.
- FIG. 7 is a graph showing the dependence of the light output characteristics on the high temperature annealing temperature, and shows the relationship between the fundamental wave input power of the wavelength conversion element manufactured by changing the heat treatment temperature in the annealing step and the output power of the wavelength converted light.
- the wavelength conversion element used was made of an MgO: LiNbO 3 substrate, and the + Z plane and the ⁇ Z plane were polished at a depth of 100 nm from the substrate surface by mechanical polishing with diamond particles.
- the conversion efficiency tends to decrease as the heat treatment temperature decreases. That is, as the annealing temperature decreased to 250 ° C., 200 ° C., and 150 ° C., the conversion efficiency decreased.
- the annealing temperature that serves as a threshold for the reduction in conversion efficiency varies depending on the material of the crystal substrate. This threshold temperature is 100 ° C. or higher for the Mg-doped LiTaO 3 substrate or LiTaO 3 system, and 300 ° C. or higher for the LiNbO 3 system. This seems to depend on the difference in the Curie temperature of the crystal.
- the annealing step it is preferable to perform the heat treatment at a predetermined annealing temperature determined by the substrate material.
- the wavelength conversion element in the present embodiment is a polarization inversion structure having a period of 7 ⁇ m and a domain inversion width of 3.5 ⁇ m in the period direction. It was confirmed that the produced domain-inverted regions did not disappear even after annealing at 400 ° C. Further, after that, even when a heat cycle step of ⁇ 20 ° C. to 100 ° C. was added, the domain-inverted structure did not disappear, and no reduction in conversion efficiency was confirmed. However, when the domain-inverted width in the periodic direction was 1 ⁇ m, annihilation was observed in some domain-inverted regions even in the annealing process at 100 ° C.
- the present invention is very effective as a method for manufacturing an optical element having both effects of stabilizing a domain-inverted structure having a domain-inverted width of 2 ⁇ m or more and removing crystal distortion at the interface of the domain-inverted structure.
- the surface treatment process is performed by mechanical polishing, but the present embodiment is different in that anisotropic wet etching is performed in the Z-axis direction of the substrate as the surface treatment process.
- anisotropic wet etching is performed in the Z-axis direction of the substrate as the surface treatment process.
- FIG. 8 is a diagram showing the light output characteristics of the optical element according to the second embodiment.
- the input power and the output power of the wavelength converted light are shown. The relationship is shown.
- the fundamental wave input exceeds 10 W
- an output of wavelength-converted light proportional to the square of the input power can be obtained. That is, even at an input power higher than that of the first embodiment, the conversion efficiency is not reduced.
- FIG. 9 is a cross-sectional view of the optical element before and after the surface treatment process having anisotropy in the Z-axis direction, and is a cross-sectional view of the optical element when the surface treatment is performed using a wet etching solution having anisotropy in the Z-axis direction.
- “having anisotropy in the Z-axis direction” means that the etching rate differs depending on the orientation (+ Z plane, ⁇ Z plane) of the plane orthogonal to the direction of spontaneous polarization. That is, since the directions of spontaneous polarization are alternately reversed, layers having different etching rates exist alternately on the + Z plane and the ⁇ Z plane of the ferroelectric substrate 1.
- the + Z plane and the ⁇ Z plane are repeated with periodicity, and the step 13 having periodicity is formed on the substrate surface because the etching rates on the respective surfaces are different. Since the nitric acid solution has a higher etching rate on the -Z plane than the etching rate on the + Z plane of the MgO: LiNbO 3 substrate (because of anisotropy), it is periodic in the domain-inverted optical element when wet etching is performed.
- a step 13 is formed. The size of the step 13 is proportional to the etching time. In this embodiment, a step of several tens of nm was obtained by etching for 20 minutes using a fluorinated nitric acid solution.
- FIG. 10 is a diagram showing generation of pyroelectric charges in the optical element having a step according to the present invention, and shows the state of spontaneous polarization during the high-temperature annealing process in the wavelength conversion element subjected to the surface treatment of the present embodiment.
- the upper diagram of FIG. 10 shows the spontaneous polarization before the high temperature annealing step
- the lower diagram shows the spontaneous polarization during the high temperature annealing step. Since the step 13 formed by anisotropic wet etching prevents the pyroelectric charge 10 from moving during high-temperature annealing, the pyroelectric charge 10 reliably stays at the generated position. Therefore, light absorption can be reduced more stably and effectively than an optical element without a step.
- a step is provided on the substrate by wet etching using a hydrofluoric acid solution in this embodiment mode, a similar step can be formed by using chemical mechanical polishing (CMP).
- CMP chemical mechanical polishing
- an acidic or alkaline chemical mechanical polishing solution having a large difference in etching rate in the Z-axis direction is effective because a step can be easily formed.
- the ferroelectric substrate includes an MgO-doped LiTaO 3 substrate, an Nd-doped LiNbO 3 substrate, a KTP substrate, a KNbO 3 substrate, an LiNbO 3 substrate doped with Nd and MgO, or an LiTaO 3 substrate doped with Nd and MgO.
- a similar substrate having a stoichiometric composition such as Mg-doped LiTa (1-x) NbxO 3 (0 ⁇ x ⁇ 1) may be used.
- the present invention can generate a pyroelectric effect at the time of annealing treatment stably, and is therefore suitable for the production of an optical element having a highly transparent domain-inverted structure free from crystal distortion. Furthermore, since the altered layer, impurities, or electrodes on the substrate surface are completely removed, the insulation of the substrate is ensured, and a high-power and stable optical element can be realized.
- the optical element manufacturing method of the present invention can be used as a method for manufacturing a highly efficient and stable wavelength conversion element having a periodically poled structure in, for example, a Mg-doped crystal. Furthermore, the optical element manufacturing method of the present invention can realize stable formation and maintenance of the domain-inverted regions, and provide a highly transparent optical element free from crystal distortion. Further, it is possible to provide an optical element including a domain-inverted region having high reliability in which light output is stable at high output.
- the wavelength conversion element is described as an example of the optical element using the polarization inversion structure.
- the optical element having the polarization reversal structure can be made a deflector if it is formed in a prism shape or a grating shape. This deflector can be applied to, for example, its phase shift, optical modulator, lens, and the like. Further, if a voltage is applied to the domain-inverted region, a change in refractive index due to the electro-optic effect can be caused. For this reason, the optical element using this is realizable.
- an optical element in which the refractive index change is formed can be applied to switches, deflectors, modulators, phase shifters, beam shaping, and the like. Since the method for manufacturing an optical element of the present invention makes it possible to form a stable and highly transparent domain-inverted structure, it is possible to improve the performance of these optical elements.
- the method for producing an optical element according to the present invention is useful in a field where it is required to provide an optical element having a domain-inverted structure.
- the method of manufacturing an optical element according to the present invention can realize stable formation and maintenance of a domain-inverted region, and can realize an optical element having a domain-inverted region that has a stable optical output at high output and high reliability. Therefore, it is useful as an optical element having a polarization inversion region applied to a wavelength conversion element, a deflecting element, an optical switch, a phase modulator, etc., applied to a coherent light source used in the field of processing, optical information processing and optical applied measurement control. It is.
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Abstract
Description
本実施の形態では、周期分極反転構造を強誘電体基板の内部に有した光学素子として、波長変換素子の製造方法について述べる。
実施の形態1では、表面処理工程を機械的研磨により行ったが、本実施の形態では、表面処理工程として基板のZ軸方向に異方性ウェットエッチングを行う点が相違する。この方法により、さらに高出力時の変換効率低下を防止することができる。
Claims (13)
- 強誘電体基板の+Z面と-Z面に金属膜を形成して電極を作製する電極形成工程と、
前記+Z面に形成された前記金属膜を周期電極に形成する周期電極形成工程と、
前記周期電極と前記-Z面の電極との間に電圧を印加して前記強誘電体基板の内部に分極反転領域を形成する分極反転形成工程と、
前記電極および前記周期電極ならびに前記強誘電体基板の+Z面と-Z面の表面層を除去する表面処理工程と、
前記表面層を削除した強誘電体基板に所定の熱を加えるアニール工程とから成る光学素子の製造方法。 - 前記強誘電体基板がMgドープLiTa(1-x)NbxO3(0≦x≦1)である請求項1記載の光学素子の製造方法。
- 前記強誘電体基板の結晶が、ストイキオメトリック組成である請求項2記載の光学素子の製造方法。
- 前記分極反転領域の分極反転幅は、2μm以上である請求項1記載の光学素子の製造方法。
- 前記表面処理工程における表面層の除去深さは、前記強誘電体表面から10nmより大きい請求項1記載の光学素子の製造方法。
- 前記表面処理工程における表面層の除去を、ドライエッチングまたはウェットエッチングあるいは研磨により行う請求項1記載の光学素子の製造方法。
- 前記強誘電体基板の+Z面と-Z面とにおいて、隣接する分極反転領域とに段差を形成する請求項1記載の光学素子の製造方法。
- 前記段差の形成を、前記強誘電体基板のZ軸方向にエッチング速度の異方性をもつエッチング溶液でウェットエッチングすることにより行う請求項7記載の光学素子の製造方法。
- 前記エッチング溶液が、フッ硝酸溶液である請求項8記載の光学素子の製造方法。
- 前記段差の形成を、前記強誘電体基板のZ軸方向に研磨速度の異方性をもつ研磨剤を用いた研磨により行う請求項7記載の光学素子の製造方法。
- 前記アニール工程前における前記強誘電体基板の+Z面と-Z面には、所定の抵抗率を持つ酸化シリコン膜が設けられている請求項1記載の光学素子の製造方法。
- 前記所定の抵抗率が、105Ω/□以上であることを特徴とする請求項11記載の光学素子の製造方法。
- 前記強誘電体基板が絶縁体の上に保持された状態で前記アニール工程が行われる請求項1記載の光学素子の製造方法。
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013088479A (ja) * | 2011-10-13 | 2013-05-13 | Panasonic Corp | 波長変換素子、レーザ光源装置、画像表示装置及び波長変換素子の製造方法 |
JP2013195687A (ja) * | 2012-03-19 | 2013-09-30 | Ngk Insulators Ltd | 光スイッチング素子 |
JP2017227935A (ja) * | 2017-10-04 | 2017-12-28 | 日本碍子株式会社 | 波長変換素子の製造方法 |
WO2023209819A1 (ja) * | 2022-04-26 | 2023-11-02 | 日本電信電話株式会社 | 周期分極反転構造の検査方法 |
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JP5594192B2 (ja) * | 2011-03-08 | 2014-09-24 | 住友大阪セメント株式会社 | 光変調器 |
JP5922781B2 (ja) | 2012-09-10 | 2016-05-24 | 三菱電機株式会社 | 光源装置 |
JP6273762B2 (ja) * | 2013-10-18 | 2018-02-07 | ウシオ電機株式会社 | 波長変換素子の製造方法 |
CN108871592B (zh) * | 2018-05-08 | 2020-07-03 | 电子科技大学 | 一种低压电及温度干扰的柔性热释电红外热像仪像素阵列 |
CN114836837B (zh) * | 2022-05-27 | 2024-06-04 | 桂林百锐光电技术有限公司 | 一种改变磷酸钛氧钾晶体材料反转畴宽度的方法 |
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- 2010-09-15 WO PCT/JP2010/005615 patent/WO2011045893A1/ja active Application Filing
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JP2013088479A (ja) * | 2011-10-13 | 2013-05-13 | Panasonic Corp | 波長変換素子、レーザ光源装置、画像表示装置及び波長変換素子の製造方法 |
US8820968B2 (en) | 2011-10-13 | 2014-09-02 | Panasonic Corporation | Wavelength conversion element, laser light source device, image display device, and method of manufacturing wavelength conversion element |
JP2013195687A (ja) * | 2012-03-19 | 2013-09-30 | Ngk Insulators Ltd | 光スイッチング素子 |
JP2017227935A (ja) * | 2017-10-04 | 2017-12-28 | 日本碍子株式会社 | 波長変換素子の製造方法 |
WO2023209819A1 (ja) * | 2022-04-26 | 2023-11-02 | 日本電信電話株式会社 | 周期分極反転構造の検査方法 |
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US20120152892A1 (en) | 2012-06-21 |
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