WO2010150365A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- WO2010150365A1 WO2010150365A1 PCT/JP2009/061491 JP2009061491W WO2010150365A1 WO 2010150365 A1 WO2010150365 A1 WO 2010150365A1 JP 2009061491 W JP2009061491 W JP 2009061491W WO 2010150365 A1 WO2010150365 A1 WO 2010150365A1
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- thin film
- semiconductor device
- metal thin
- semiconductor element
- terminal
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Definitions
- the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.
- a semiconductor device in which a semiconductor element is packaged without using a lead frame is known.
- the number of recesses corresponding to the number of electrode pads is formed in advance in the lead frame, a plating layer is formed in the recess, and the electrode pad and the plating layer are wire-bonded and molded. After sealing with resin, the lead frame is removed.
- the semiconductor device of the present invention includes a semiconductor element having a plurality of electrode pads on the upper surface, a plurality of thin film terminals provided separately on the lower surface of the semiconductor element by a separation unit, a semiconductor element and each thin film terminal, An insulating layer provided between the semiconductor element, a connection member for connecting the electrode pad of each semiconductor element and each thin film terminal, and the semiconductor element, a plurality of thin film terminals exposed from the semiconductor element, on the separation portion and covering the connection member And a provided resin layer.
- the method for manufacturing a semiconductor device also includes a step of preparing a semiconductor element having electrode pads, a metal thin film having a larger area than the semiconductor element, and the semiconductor element is electrically connected to the metal thin film on the metal thin film.
- the method for manufacturing a semiconductor device includes a step of preparing a semiconductor element having an electrode pad, a metal thin film having a larger area than the semiconductor element, and the semiconductor element on the metal thin film. Electrically insulating and fixing with each other, electrically connecting the electrode pad and the metal thin film with a connection member, and forming an insulating layer covering the semiconductor element and the connection member on the metal thin film And the step of forming the metal thin film on a thin film terminal having a predetermined shape are performed in the order of this step.
- the present invention when forming a thin film terminal connected to the electrode pad of the semiconductor element, it is not necessary to use a lead frame, and therefore it is not necessary to process the lead frame, so that development efficiency and productivity can be improved. Can be improved.
- FIG. 1 is an enlarged perspective view showing a first embodiment of a semiconductor device of the present invention.
- FIG. 3 is a perspective view for explaining a method for manufacturing the semiconductor device of FIG. 1.
- the perspective view for demonstrating the process following FIG. The perspective view for demonstrating the process following FIG.
- the perspective view for demonstrating the process following FIG. The perspective view for demonstrating the process following FIG.
- the perspective view for demonstrating the process following FIG. FIG. 8 is a perspective view for explaining a process following FIG. 7, in which the front and back surfaces are reversed with respect to FIGS. 2 to 7 and viewed from the back surface side.
- FIG. 3 is an enlarged cross-sectional view for explaining a method of manufacturing the semiconductor device of FIG. 1, and shows the inside of one semiconductor device formation region in the process shown in FIG. 2.
- FIG. 3 is an enlarged cross-sectional view for explaining a method of manufacturing the semiconductor device of FIG. 1, and shows the inside of one semiconductor device formation region in the process shown in FIG. 2.
- FIG. 3 is an
- FIG. 10 is an enlarged cross-sectional view for explaining a process following FIG. 9 and corresponds to the process shown in FIG. 3. It is an expanded sectional view for demonstrating the process following FIG. 10, and respond
- FIG. 12 is an enlarged cross-sectional view for explaining a process following FIG. 11 and corresponds to the process shown in FIG. 5.
- FIG. 13 is an enlarged cross-sectional view for explaining a process following FIG. 12 and corresponds to the process shown in FIG. 6.
- FIG. 14 is an enlarged cross-sectional view for explaining a step following FIG. 13 and corresponds to the step shown in FIG. 7.
- FIG. 18 is an enlarged cross-sectional view for explaining a process following FIG. 17.
- FIG. 19 is an enlarged cross-sectional view for explaining a process following FIG. 18.
- FIG. 20 is an enlarged cross-sectional view for explaining a step following FIG. 19.
- FIG. 21 is an enlarged cross-sectional view for explaining a process following FIG. 20.
- the expanded sectional view which shows the 1st modification of the semiconductor device of this invention.
- FIG. 25 is an enlarged perspective view showing another example different from FIG. 24 regarding the method for manufacturing a semiconductor device of the present invention.
- FIGS. 26A and 26B are diagrams for explaining a third embodiment of the semiconductor device of the present invention, FIG. 26A is a top view, and FIG. 26B is a sectional view taken along line XXVI B -XXVI B of FIG.
- FIG. 26C is a cross-sectional view, and FIG. 26C is a bottom view.
- FIG. 1 is an enlarged perspective view of a semiconductor device of the present invention.
- the semiconductor device 10 has a plurality of thin film terminals 30 ⁇ / b> A separated by the separation unit 16 on the lower surface of the semiconductor element 11.
- the semiconductor element 11 is obtained by dicing a semiconductor wafer on which an integrated circuit is formed.
- the semiconductor element 11 has a plurality of electrode pads 12 whose surfaces are exposed.
- a protective film such as a polyimide film or the like is formed around the electrode pad 12 although not shown.
- the electrode pad 12 has a bump shape, but it does not necessarily have to protrude from the upper surface.
- the thin film terminal 30A has a portion protruding from the periphery of the semiconductor element 11, and one end of a wire (connection member) 13 is bonded to the protruding portion. The other end of the wire 13 is bonded to the electrode pad 12. Accordingly, each thin film terminal 30 ⁇ / b> A is electrically connected to the corresponding electrode pad 12 by the wire 13.
- the semiconductor element 11, the thin film terminal 30 ⁇ / b> A protruding from the outer shape of the semiconductor element 11, the separation portion 16, and the wire 13 are covered with a thermosetting resin layer 15 such as an epoxy resin.
- the semiconductor device 10 of FIG. 1 is illustrated as an example having four electrode pads 12 and thin film terminals 30A of the semiconductor element 11, but this is for the convenience of illustration. Many electrode pads 12 are formed on the upper surface of the semiconductor element 11, and a number of thin film terminals 30 ⁇ / b> A corresponding to the electrode pads 20 are formed on the lower surface side of the semiconductor element 11.
- the thin film terminal 30A is formed of a metal foil such as aluminum, and although not limited thereto, the thickness of the thin film terminal 30A is very thin, about 30 to 100 ⁇ m.
- Each thin film terminal 30 ⁇ / b> A has a deformed portion 20.
- FIG. 15 is an enlarged cross-sectional view of the deformable portion 20.
- the deformable portion 20 protrudes from the surface side facing the resin layer 15 toward the outer surface side (in other words, from the upper surface side to the lower surface side in FIG. 15), and the outer shape is generally hemispherical, and the central portion thereof Has a shape having a depression.
- the inner side of the hemispherical protruding portion 22 of the deformable portion 20 is a groove 23 having a deepest portion 23a, and a slope portion 23b that rises linearly from the deepest portion 23a of the groove 23 inward.
- the central portion of the deformable portion 20 has a flat connecting portion 21 whose upper surface 21a is flush with the surrounding 20a of the deformable portion 20, and the inclined portion 23b of the groove 23 supports the connecting portion 21. ing.
- a two-dot chain line indicates a bonding state of the wire 13.
- the connection portion 21 and the slope portion 23b of the groove 23 form a conical depression 24 when viewed from the outside. As will be described later, the conductivity for connecting to an external terminal is provided in the depression 24.
- the connecting material is filled.
- the resin layer 15 is also filled in the groove 23 of the deformable portion 20, and as will be described later, each thin film terminal 30 ⁇ / b> A is securely held as the resin layer 15 is cured.
- the external size of the semiconductor device 10 can be 2 to 5 mm (length) ⁇ 2 to 5 mm (width) ⁇ 0.3 to 0.8 mm (thickness). 10 can be produced efficiently with high production efficiency and reliability.
- an example of the manufacturing method of the semiconductor device of the first embodiment will be described.
- FIGS. 2 to 8 are enlarged perspective views for explaining an example of the semiconductor device manufacturing method of the present invention
- FIGS. 9 to 14 are enlarged sectional views corresponding to FIGS. 2 to 7, respectively.
- FIGS. 2 to 8 illustrate a method of simultaneously forming a large number of semiconductor devices
- FIGS. 9 to 14 illustrate the manufacturing process of one semiconductor device for convenience of explanation. Sectional drawing for showing is shown.
- a metal thin film 30 having a size capable of forming a large number of semiconductor devices 10 is prepared and bonded to a base 41 made of stainless steel (SUS) having the same size. It adheres with the insulating layer 42 which has property. As shown in FIG. 9, the base 41, the insulating layer 42, and the metal thin film 30 are stacked in close contact with each other in this order.
- SUS stainless steel
- each deformable portion 20 has the cross-sectional shape illustrated in FIG. 15, and has a shape having the connecting portion 21 at the center of the protruding portion 22.
- the deformed portion 20 is formed so that the entirety thereof is accommodated in the insulating layer 42. That is, the height H of the deformed portion 20 is smaller than the thickness T of the insulating layer 42.
- the height H of the deformed portion 20 can be 30 to 70 ⁇ m
- the diameter D can be 200 to 300 ⁇ m
- the thickness T of the insulating layer 42 can be 50 to 200 ⁇ m.
- the semiconductor element 11 having the electrode pad 12 on the upper surface is fixed in each semiconductor device formation region of the metal thin film 30.
- the semiconductor element 11 and the metal thin film 30 are fixed by interposing an insulating material 43 such as a die attach material between both members (see FIG. 11).
- the insulating material 43 may be bonded to the lower surface of each semiconductor element 11 in advance, or may be bonded to the upper surface of the metal thin film 30.
- each electrode pad 12 of the semiconductor element 11 is wire-bonded to the metal thin film 30 (see FIGS. 5 and 12).
- the wire is heated by a capillary (not shown), one end of the wire is formed into a spherical shape, bonded to the connecting portion 21 of the deformed portion 20 of the metal thin film 30, and the other end is bonded to the electrode pad 12.
- the electrode pad 12 and the metal thin film 30 are electrically connected by the wire 13.
- the connecting portion 21 of the deformable portion 20 to which one end of the wire 13 is connected is formed at an arbitrary position of the metal thin film 30, bonding is performed at a predetermined position of the lead frame using the lead frame.
- the metal thin film 30 is not yet formed into a separated terminal shape, so that each deformable portion 20 can be set to an optimum position for bonding the wire 13. it can.
- the wire 13 can be bonded at an optimal position on the metal thin film 30 with an optimal size.
- the resin is poured into the mold, and as shown in FIG. 6 and FIG. Cover with resin layer 15. That is, the resin layer 15 is formed on the upper surface and all side surfaces of the semiconductor element 11, the upper surface of the metal thin film 30 exposed from the semiconductor element 11, and the entire periphery of the wire 13.
- the resin layer 5 is also filled in the groove 23 of the deformable portion 20. Then, the resin layer 15 is cooled. In the state illustrated in FIGS. 6 and 13, the metal thin film 30 is held only by the adhesive force of the insulating material 43 and the resin layer 15 to the metal thin film 30. However, in the present invention, since the resin layer 15 is also filled in the groove 23 of the deformable portion 20, the adhesive force between the metal thin film 30 and the resin layer 15 is reinforced by the resin layer 15 contracting by cooling. .
- the base 41 and the insulating layer 42 are removed, and the lower surface of the metal thin film 30 is exposed (see FIG. 7). Then, as shown in FIG. 8, the metal thin film 30 located on the lower surface of each semiconductor element 11 is separated by the separation unit 16 in both the row direction and the column direction using a dicing blade 51. Disconnect.
- the metal thin film 30 and the resin layer 15 are cut in the row direction and the column direction using the dicing blade 52 at the boundary between the semiconductor device formation regions, the metal thin films 30 are individually separated to form the thin film terminals 30A. As a result, as shown in FIGS. 14 and 1, the semiconductor device 10 of the present invention is obtained.
- the metal thin film 30 and the resin layer 15 are cut using the dicing blade 52, if the adhesive force between the metal thin film 30 and the resin layer 15 is small, the metal thin film 30 peels off, making it difficult to form the thin film terminal 30A. May be.
- the deformable portion 20 is provided in the metal thin film 30, and the resin layer 15 filled in the deformable portion 20 is formed on the projecting portion 22 of the deformable portion 20 when the resin layer 15 contracts. Since the pressure bonding is performed, the adhesion between the metal thin film 30 and the resin layer 15 is increased, and the thin film terminal 30 can be prevented from being peeled off.
- the method of cutting the metal thin film 30 to form the separation portion 16 and the method of cutting the metal thin film 30 and the resin layer 15 at the boundary between the semiconductor device formation regions are not limited to the method by dicing using a dicing blade, but etching
- a dry etching method such as a wet etching method using a liquid or a plasma etching method using a chemical reaction gas and / or an inert gas can be used.
- the semiconductor device and the manufacturing method of the semiconductor device of the present invention it is not necessary to use a lead frame when forming a thin film terminal to be connected to the electrode pad of the semiconductor element. Therefore, development efficiency and productivity are improved. In particular, since a pattern mask for forming the lead frame is not required, the cost can be greatly reduced. Further, since the wire is bonded to an arbitrary position on the metal thin film 30 having an outer size larger than the outer size of the semiconductor element 11, it is possible to increase the bonding density by appropriately adjusting the position and size of the wire and the thin film terminal. In addition, since the thin film terminal can be made extremely thin, it is possible to reduce the cost and further reduce the thickness. Further, since the deformed portion 20 having the groove 23 is provided in the thin film terminal 30A, the fixing force between the thin film terminal 30A and the resin layer 15 can be improved.
- FIG. 16 shows an enlarged cross-sectional view of a state in which the semiconductor device 10 of the present invention is mounted on the circuit board 60.
- a connection terminal 61 is formed on the upper surface of the circuit board 60.
- the thin film terminal 30A of the semiconductor device 10 is aligned with the connection terminal 61, and both members are joined by a joining material 62 such as solder.
- the thin film terminal 30A has a depressed portion 24 formed at the center of the deformable portion 20, and the bonding material 62 fills the depressed portion 24 and enhances the bonding strength.
- the bonding material 62 may be provided on the connection terminal 61 or may be provided on the surface of the protruding portion 22 of the deformable portion 20 and the recessed portion 24.
- the bonding material 62 is not limited to solder, and it is also possible to apply a conductive connection material such as silver paste, an anisotropic conductive connection material that is insulative in the surface direction and exhibits conductivity only in the thickness direction. is there.
- each thin film terminal 30 ⁇ / b> A of the semiconductor device 10 is formed with the deformed portion 20 only at a position where the wire 13 is connected.
- FIG. 21 is an enlarged cross-sectional view of such a semiconductor device 70.
- a large number of deformed portions 20 are formed in each thin film terminal 35 ⁇ / b> A of the semiconductor device 70.
- transformation part 20 has the structure shown in 1st Embodiment, and the protrusion part 22 and the connection part 21 are alternately arranged along the longitudinal direction.
- One end of a wire 13 having the other end connected to the electrode pad 12 is connected to one of the plurality of deformable portions 20.
- a large number of the deforming portions 20 are arranged in a plurality of rows in the direction perpendicular to the drawing.
- the metal thin film 35 is bonded to the base 41 by the insulating layer 42, and a large number of deformed portions 20 are formed in the metal thin film 35 by hot pressing.
- a large number of deformed portions 20 are formed along the longitudinal direction of the metal thin film 35. That is, as shown in FIG. 17, along the longitudinal direction of the metal thin film 35, the connecting portions 21 and the protruding portions 22 having a flat upper surface are alternately and repeatedly formed.
- a groove 23 is formed on the inner surface of the protruding portion 22 of each deformable portion 20, and a truncated cone-shaped recessed portion 24 is formed on the outer surface of the connecting portion 21.
- the deforming portions 20 are arranged in multiple rows in the depth direction of the metal thin film 35 (direction perpendicular to the drawing). In this case, it is preferable that the deforming portions 20 are formed at equal intervals for each row because the number of deforming portions formed on each thin film terminal, which will be described later, is the same and the fixing force with the resin layer becomes uniform. . However, it is not always necessary to arrange them at regular intervals, and they may be provided at non-uniform intervals.
- the semiconductor element 11 having the electrode pad 12 is fixed in each semiconductor device formation region of the metal thin film 35.
- the semiconductor element 11 is fixed to the metal thin film 35 by the insulating material 43 as in the first embodiment.
- the insulating material 43 is formed to cover at least one deformed portion 20 of the deformed portion 20 of the metal thin film 35. That is, as shown in FIG. 18, the grooves 23 of some of the deformable portions 20 are filled. For this reason, the adhering force between the insulating material 43 and the metal thin film 35 is strengthened as compared with the case of the first embodiment.
- each electrode pad 12 is connected to one of the plurality of deformed portions 20 of the metal thin film 35 by a wire 13.
- a large number of the deformable portions 20 are formed, but they may be connected to the connection portion 21 of the deformable portion 20 at the optimum position among them.
- the entire metal thin film 35 is covered with the resin layer 15.
- the resin layer 15 is formed to cover the upper surface and all side surfaces of the semiconductor element 11, the metal thin film 35 exposed from the semiconductor element 11, and the wire 13. Accordingly, the grooves 23 of all the deformed portions 20 exposed from the semiconductor element 11 are filled.
- the resin layer 15 is filled in the groove 23 of the deformable portion 20 to reinforce the fixing force between the metal thin film 35 and the resin layer 15, but in the second embodiment, Since a larger number of deformed portions 20 are formed than in the first embodiment, the adhesion force between the metal thin film 35 and the resin layer 15 is further greater than that in the first embodiment.
- the base 41 and the insulating layer 42 are removed, and the lower surface of the metal thin film 35 is exposed.
- the metal thin film 35 located on the lower surface of the central portion of each semiconductor element 11 is removed by an appropriate method such as dicing.
- the resin layer 15 and the metal thin film 35 are cut at the boundary portions of the respective semiconductor device formation regions, thereby obtaining the semiconductor device 70 having the individually separated thin film terminals 35A.
- the same effect as that of the semiconductor device 10 of the first embodiment can be obtained.
- the semiconductor device 70 of the second embodiment since a large number of deformed portions 20 are formed in addition to the portion connecting the wires 13, the adhesion between the metal thin film 35 and the resin layer 15 is further increased. Can be increased.
- FIG. 22 shows a semiconductor device 10 ⁇ / b> A that is a modification of the semiconductor device 10.
- the semiconductor device 10 ⁇ / b> A differs from the semiconductor device 10 in that the semiconductor device 10 ⁇ / b> A has a configuration in which the separating portion 16 penetrates not only the thin film terminal 30 ⁇ / b> A but also the insulating material 43 and reaches the lower surface portion of the semiconductor element 11. It is.
- the metal thin film 30 is cut by the dicing blade 51 to form the thin film terminal 30 ⁇ / b> A.
- the tip of the dicing blade 51 is placed on the lower surface of the semiconductor element 11. What is necessary is just to set it to the position which reaches the depth which cuts a part, and to cut.
- FIG. 22 is illustrated as a modification of the semiconductor device 10, the separation portion 16 can be formed to a depth reaching the lower portion of the semiconductor element 11 in the same manner as the semiconductor device 70 illustrated in FIG. 21.
- FIG. 23 shows a modified example 70 ⁇ / b> A of the semiconductor device 70.
- the semiconductor device 70A is different from the semiconductor device 70 in that the separation part 16 is formed so as to open not only the thin film terminal 70A but also at least the lower part of the insulating material 43.
- the metal thin film 70 is cut by a dicing blade to form the thin film terminal 70A.
- the tip of the dicing blade 51 reaches the insulating material 43. May be set at a position that does not reach the semiconductor element 11 and cut.
- FIG. 23 is illustrated as a modification of the semiconductor device 70, similarly to the semiconductor device 10, the separation portion 16 may have a depth that reaches the insulating material 43 but does not reach the semiconductor element 11. it can.
- FIG. 24 is an enlarged perspective view showing a modification of the method for manufacturing a semiconductor device of the present invention.
- the metal thin film 30 or 35 is connected to the electrode pad 12 of the semiconductor element 11 by the wire 13 to form the thin film terminal 30A or 35A. It was a method of forming.
- the separation part 16 is formed together with the deformation part 20 on the metal thin film 36 before the semiconductor element 11 is mounted.
- separation part 16 is extended in the row direction and column direction which pass the center part of the semiconductor element 11, and makes the length reach the position exceeding the external shape size of the thin film terminal formed.
- the semiconductor element 11 is fixed to the metal thin film 36, the connection portion 21 of the deformable portion 20 and the electrode pad 12 are connected with a wire, and the whole is covered with a resin layer, and then the metal thin film 36 is positioned at a position indicated by a two-dot chain line. And the resin layer is cut. Thereby, the metal thin films 36 are individually separated to form thin film terminals 36A. In this method, since the external force such as impact applied to the metal thin film 36 is small in the step of forming the thin film terminal 36A, the formation of the thin film terminal 36A is easy and reliable.
- FIG. 25 is an enlarged perspective view showing still another modification of the method for manufacturing a semiconductor device of the present invention.
- the deformed portion 20 is mounted on the metal thin film 37 at a position corresponding to the central portion of the semiconductor element 11 to be mounted, rather than the outer size of the semiconductor element 11.
- An opening 17 having a small outer size is formed.
- the semiconductor element 11 is fixed to the metal thin film 37, the connecting portion 21 of the deformable portion 20 and the electrode pad 12 are connected with a wire, and the whole is covered with a resin layer.
- the metal thin film 37 is removed along the row direction and the column direction passing through, and the separation part 16 is formed. Thereby, the metal thin film 37 is isolate
- the individual semiconductor device can be obtained by cutting the metal thin film 37 and the resin layer into outer sizes.
- FIG. 26 shows a third embodiment of the semiconductor device of the present invention.
- the semiconductor device 80 of this embodiment shows an example in which thin film terminals are arranged along all side portions of the semiconductor element 11, FIG. 26 (A) is a top view, and FIG. 26 (B) is FIG.
- FIG. 26A is a cross-sectional view taken along line XXVI B -XXVI B of FIG. 26A, and
- FIG. 26C is a bottom view.
- the semiconductor element 11 in this embodiment has electrode pads 12 arranged along all the side portions of the four sides.
- the thin film terminals 38A are also arranged on the same side as the side where the electrode pads 12 to be connected are arranged.
- Each thin film terminal 38 ⁇ / b> A is connected to the electrode pad 12 by the wire 13 while being fixed to the lower surface of the semiconductor element 11 by the insulating material 43.
- the whole including the semiconductor element 11 and the thin film terminal 38 ⁇ / b> A is covered with the resin layer 15.
- three electrode pads 12 and three thin film terminals 38A are arranged on each side portion, but the number of electrode pads 12 and thin film terminals 38A arranged on each side portion is the same as that of alignment and thin film terminal formation. There is no limit to the applicability of the present invention in this regard.
- the deformed portion 20 having the groove portion 23 is provided on the surface facing the resin layer 15, and the resin layer 15 is contracted by the shrinkage of the resin layer 15 filled in the groove 23.
- the structure increases the adhesion force with the metal thin film 30.
- the method for increasing the adhesion between the resin layer 15 and the metal thin film 30 is not limited to the above structure.
- fine irregularities having a surface roughness of, for example, about 6 to 10 ⁇ m may be formed on the side of the metal thin film 30 that contacts the resin layer 15. Further, in this way, fine irregularities are formed in the metal thin film 30, and as shown in the first to third embodiments, the deformed portion 20 having the groove portion 23 is provided on the surface facing the resin layer 15. It is good also as a structure.
- the height of the upper surface 21a of the connecting portion 21 of the deformable portion 20 is the same surface as the upper surface 20a of the thin film terminal 30A.
- the present invention is not limited to this, and the upper surface 21a of the connecting portion 21 may be lower than the thin film terminal 30A. There is no problem. In this case, the upper surface 21 a of the connecting portion 21 can be flush with the deepest portion 23 a of the deformable portion 20.
- the method of forming the resin layer 15 has been described by a method in which the semiconductor element 11 is bonded to the metal thin film 30 and then stored in the mold together with the base 41 to form the resin layer 15 by molding.
- the resin layer 15 may be molded after the semiconductor element 11 is bonded to the metal thin film 30 and the base 41 is removed.
- the upper surface of the peripheral portion of the metal thin film 30 is pressed against the bottom surface of the upper mold, the mold is clamped with the lower surface of the peripheral portion pressed by the lower mold, and resin is introduced into the mold to form the resin layer 15. can do.
- the semiconductor device of the present invention can be variously modified and configured within the scope of the invention.
- a semiconductor element having a plurality of electrode pads on the upper surface and a lower surface of the semiconductor element.
- a plurality of thin film terminals provided separately in the separation unit, an insulating layer provided between the semiconductor element and each thin film terminal, and an electrode pad of each semiconductor element and each thin film terminal are connected to each other What is necessary is just to comprise a connection member, the semiconductor element, the some thin film terminal exposed from the semiconductor element, the resin layer provided on the isolation
- the method for manufacturing a semiconductor device also includes a step of preparing a semiconductor element having electrode pads, a metal thin film having a larger area than the semiconductor element, and the semiconductor element is electrically connected to the metal thin film on the metal thin film.
- the step of forming the thin film terminal is also includes a step of preparing a semiconductor element having electrode pads, a metal thin film having a larger area than the semiconductor element, and the semiconductor element is electrically connected to the metal thin film on the metal thin film.
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Abstract
Description
さらに、本発明の半導体装置の製造方法は、電極パッドを有する半導体素子を準備する工程と、前記半導体素子より大きい面積の金属薄膜を準備し、前記半導体素子を前記金属薄膜上に、前記金属薄膜と電気的に絶縁して固定する工程と、前記電極パッドと前記金属薄膜とを接続部材により電気的に接続する工程と、前記金属薄膜上に前記半導体素子および前記接続部材を覆う絶縁層を形成する工程と、前記金属薄膜を所定形状の薄膜端子に形成する工程と、をこの工程の順に行うことを特徴とする。
以下、この発明の半導体装置の第1の実施形態について説明する。
図1は、本発明の半導体装置の拡大斜視図である。半導体装置10は、半導体素子11の下面に、分離部16で分離された複数の薄膜端子30Aを有する。半導体素子11は、集積回路が形成された半導体ウエハをダイシングすることにより得られる。半導体素子11は、表面が露出された複数の電極パッド12を有する。電極パッド12の周囲には、図示はしないが、酸化シリコン、あるいは、さらにその上にポリイミド膜等の保護膜が形成されている。図1において、電極パッド12はバンプ状とされているが、必ずしも、上面から突き出しておく必要はない。
なお、図1の半導体装置10は、半導体素子11の電極パッド12および薄膜端子30Aを、それぞれ、4個有する例として図示されているが、これは、図示の都合であって、実際には、半導体素子11の上面に多数の電極パッド12が形成され、半導体素子11の下面側には、電極パッド20に対応する数の薄膜端子30Aが形成されている。
各薄膜端子30Aは、変形部20を有する。図15は変形部20の拡大断面図である。
変形部20は、樹脂層15に対向する面側から外面側(換言すれば、図15の上面側から下面側)に向かって突き出されており、大略、外形が半球形状とされ、その中央部に陥没部を有する形状を有する。
変形部20の中央部分は、上面21aが、変形部20の周囲の20aと同一面とされた平坦な接続部21を有しており、この接続部21を溝23の斜面部23bが支持している。接続部21の上面21aにおいて、前述のワイヤ13の一端がボンディングされる。2点鎖線は、ワイヤ13のボンディング状態を示す。
接続部21および溝23の斜面部23bは、外側からみると、円錐体形状の陥没部24を形成しており、後述するが、この陥没部24内に、外部端子に接続するための導電性の接続材料が充填される。
半導体装置10の外形サイズは、2~5mm(長さ)×2~5mm(幅)×0.3~0.8mm(厚さ)とすることが可能であり、このように小さいサイズの半導体装置10を、生産効率および信頼性が高く、且つ、効率的に生産することが可能である。
以下、第1実施形態の半導体装置の製造方法の一例を説明する。
図9に図示される通り、基台41、絶縁層42、金属薄膜30が、この順に密着して積層される。
一例として、変形部20の高さHを30~70μm、直径Dを200~300μmとし、絶縁層42の厚さTを50~200μmとすることができる。但し、上記したT>Hの条件付きである。
キャピラリ(図示せず)によりワイヤを加熱して、ワイヤの一端を球状に成形して、金属薄膜30の変形部20の接続部21にボンディングし、他端を電極パッド12にボンディングする。これにより、ワイヤ13により電極パッド12と金属薄膜30が電気的に接続される。
そして、図8に図示されるように、各半導体素子11の下面に位置する金属薄膜30を、ダイシングブレード51を用いて、行方向および列方向いずれの方向においても分離部16で分離されるように切断する。
また、薄膜端子は、極めて薄い厚さにすることができるので、これによっても低コスト化および一層の薄型化を図ることができる。
さらに、薄膜端子30Aに溝23を有する変形部20を設けているので、薄膜端子30Aと樹脂層15との固着力の向上を図ることができる。
回路基板60には、上面に接続端子61が形成されている。この接続端子61に半導体装置10の薄膜端子30Aを位置合わせして、半田等の接合材62により両部材を接合する。
薄膜端子30Aは変形部20の中央部に陥没部24が形成されており、接合材62は、この陥没部24内を充填し接合強度を強化する。接合材62は、接続端子61上に設けておいてもよいし、変形部20の突出部22の表面および陥没部24内に設けておいてもよい。
また、接合材62は、半田に限らず、銀ペースト等の導電性接続材料、面方向には絶縁性で厚さ方向のみ導電性を示す異方導電性接続材等を適用することも可能である。
第1の実施形態では、半導体装置10の各薄膜端子30Aには、ワイヤ13が接続される位置のみに変形部20が形成されている。しかし、各薄膜端子30Aに変形部20を多数個形成するようにしてもよい。
図21は、このような半導体装置70の拡大断面図である。この半導体装置70の各薄膜端子35Aには多数の変形部20が形成されている。各変形部20は第1の実施形態に示す構造を有しており、突出部22と接続部21とが、長手方向に沿って交互に配列されている。複数の変形部20の1つに、他端が電極パッド12に接続されたワイヤ13の一端が接続されている。変形部20は、図面に垂直な方向にも、多数個、複数列に配列されて形成されている。
以下、図17~図21を参照して、図21に図示された半導体装置の製造方法の一例を説明する。
なお、第2の実施形態において、第1の実施形態と同一な部材は、同一の参照番号を付し、適宜、その説明を省略する。
そして、図21に図示されるように、各半導体素子11の中央部の下面に位置する金属薄膜35を、ダイシング等適宜な方法により除去する。この後、各半導体装置形成領域の境界部で樹脂層15および金属薄膜35を切断することにより、個別に分離された薄膜端子35Aを有する半導体装置70を得る。
加えて、第2の実施形態の半導体装置70の場合には、変形部20がワイヤ13を接続する部分以外にも多数個形成されているので、金属薄膜35と樹脂層15の固着力を一層高めることができる。
以下に、第1の実施形態および第2の実施形態に示された半導体装置の変形例を示す。
図22は、半導体装置10の変形例である半導体装置10Aを示す。半導体装置10Aが半導体装置10と異なる点は、半導体装置10Aでは、分離部16が薄膜端子30Aのみでなく、絶縁材43を貫通し、半導体素子11の下面部にまで達する構成とされている点である。
図22は、半導体装置10の変形例として図示されているが、図21に示した半導体装置70に対しても同様に、分離部16を半導体素子11の下部に達する深さとすることができる。
図23は、半導体装置70の変形例として図示されているが、半導体装置10に対しても同様に、分離部16を、絶縁材43に達するが半導体素子11には達しない深さとすることができる。
第1および第2の実施形態では、金属薄膜30または35を半導体素子11の電極パッド12にワイヤ13により接続した後、金属薄膜30または35をダイシングブレードにより切断して、薄膜端子30Aまたは35Aに形成する方法であった。図24に図示される方法では、半導体素子11を搭載する前に、金属薄膜36に変形部20と共に分離部16を形成しておく。分離部16は、半導体素子11の中央部を通る行方向および列方向に延出し、その長さは、形成される薄膜端子の外形サイズを超える位置に達する長さとする。
図25に図示された例では、半導体素子11を搭載する前に、金属薄膜37に変形部20と共に、搭載される半導体素子11の中央部に対応する位置に、半導体素子11の外形サイズよりも小さい外形サイズの開口部17を形成しておく。
そして、金属薄膜37に半導体素子11を固着し、変形部20の接続部21と電極パッド12をワイヤで接続し、全体を樹脂層で覆った後、二点差線で示すように、開口部17を通過する行方向および列方向に沿って金属薄膜37を除去し、分離部16を形成する。これにより、金属薄膜37が個々に分離される。
この後、金属薄膜37および樹脂層を外形サイズで切断すれば、個々の半導体装置が得られる。
図26は、本発明の半導体装置の第3の実施形態を示す。この実施形態の半導体装置80は、薄膜端子が半導体素子11の全側辺部に沿って配列された例を示しており、図26(A)は上面図、図26(B)は図26(A)のXXVIB-XXVIB線切断断面図であり、図26(C)は、下面図である。
この実施形態における半導体素子11は、四辺のすべての側辺部に沿って配列された電極パッド12を有する。また、薄膜端子38Aも接続されるべき電極パッド12が配置された側辺部と同一の側辺部に配列されている。
図26では、電極パッド12および薄膜端子38Aは各側辺部に3個づつ配置されているが、各側辺部に配置される電極パッド12および薄膜端子38Aの数は、アライメントおよび薄膜端子形成時の解像度の限界まで増大することが可能であり、この点に関する本発明の適用可能性に制限はない。
半導体素子として、集積回路を有する集積回路素子を例として説明した。
しかし、この発明は、LED、ネットワーク用受動素子、半導体センサ等、ディスクリート部品や受動部品あるいはハイブリッド部品にも適用することができる。
11 半導体素子
12 電極パッド
13 ワイヤ(接続部材)
15 樹脂層
16 分離部
17 開口部
20 変形部
20a、21a 上面
21 接続部
22 突出部
23 溝
23a 最深部
24 陥没部
30、35、36、37 金属薄膜
30A、35A、36A、38A 薄膜端子
31 上面
41 基台
42 絶縁層
43 絶縁材
70、70A、80 半導体装置
Claims (16)
- 上面に複数の電極パッドを有する半導体素子と、
前記半導体素子の下面に、それぞれ、分離部にて分離して設けられた複数の薄膜端子と、
前記半導体素子および前記各薄膜端子との間に設けられた絶縁層と、
前記各半導体素子の電極パッドと前記各薄膜端子とを接続する接続部材と、
前記半導体素子、前記半導体素子から露出した前記複数の薄膜端子、前記分離部上および前記接続部材を覆って設けられた樹脂層と、
を具備することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、前記各薄膜端子は、前記樹脂層との接面側に微細な凹凸を有することを特徴とする半導体装置。
- 請求項1または請求項2のいずれか1項に記載の半導体装置において、前記薄膜端子は、前記樹脂層との対面側から外面側に突き出す変形部を有し、前記変形部内に前記樹脂層の一部が充填されていることを特徴とする半導体装置。
- 請求項3に記載の半導体装置において、前記接続部材の一端が前記薄膜端子に接続される接続部が前記薄膜端子の変形部内に形成されていることを特徴とする半導体装置。
- 請求項4に記載の半導体装置において、前記接続部は前記薄膜端子と一体に形成され、前記変形部の最深部よりも浅い位置に設けられていることを特徴とする半導体装置。
- 請求項4に記載の半導体装置において、前記薄膜端子は、前記半導体素子の下面に積層される領域と前記半導体素子の外側の領域とを有し、前記変形部は、前記薄膜端子の前記半導体素子の外側の領域に形成されていることを特徴とする半導体装置。
- 請求項1乃至請求項6のいずれか1項に記載の半導体装置において、前記変形部は前記接続部材よりも多く形成されていることを特徴とする半導体装置。
- 請求項1乃至請求項7のいずれか1項に記載の半導体装置において、前記薄膜端子は、厚さ30~200μmであることを特徴とする半導体装置。
- 電極パッドを有する半導体素子を準備する工程と、
前記半導体素子より大きい面積の金属薄膜を準備し、前記半導体素子を前記金属薄膜上に、前記金属薄膜と電気的に絶縁して固定する工程と、
前記電極パッドと前記金属薄膜とを接続部材により電気的に接続する工程と、
前記金属薄膜上に前記半導体素子および前記接続部材を覆う絶縁層を形成する工程と、
前記金属薄膜を所定形状の薄膜端子に形成する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 請求項9に記載の半導体装置の製造方法において、前記金属薄膜を準備する工程は、前記半導体素子に対応する領域に開口部を形成する工程を含むことを特徴とする半導体装置の製造方法。
- 請求項10に記載の半導体装置の製造方法において、前記開口部は前記半導体素子に対応しない領域に延出された部分を有することを特徴とする半導体装置の製造方法。
- 請求項9乃至請求項11のいずれかに記載の半導体装置の製造方法において、前記金属薄膜を準備する工程は、前記金属薄膜に前記樹脂膜との対面側から外面に向かって突き出す変形部を形成する工程を含むことを特徴とする半導体装置の製造方法。
- 請求項12に記載の半導体装置の製造方法において、前記半導体素子より大きい面積の金属薄膜を準備する工程は、前記絶縁層を介して基台上に前記金属薄膜を接着する工程を含み、前記金属薄膜に前記変形部を形成する工程は、前記金属薄膜を前記絶縁層の内部に形成する工程を含むことを特徴とする半導体装置の製造方法。
- 請求項請求項13に記載の半導体装置の製造方法において、前記絶縁層を介して基台上に前記金属薄膜を接着する工程は、前記変形部内に前記絶縁層を充填する工程を含むことを特徴とする半導体装置の製造方法。
- 請求項13または請求項14のいずれか1項に記載の半導体装置の製造方法において、前記金属薄膜上に前記半導体素子および前記接続部材を覆う絶縁膜を形成する工程の後、前記金属薄膜を所定形状の薄膜端子に形成する工程の前に、前記基台を除去する工程を含むことを特徴とする半導体装置の製造方法。
- 電極パッドを有する半導体素子を準備する工程と、
前記半導体素子より大きい面積の金属薄膜を準備し、前記半導体素子を前記金属薄膜上に、前記金属薄膜と電気的に絶縁して固定する工程と、
前記電極パッドと前記金属薄膜とを接続部材により電気的に接続する工程と、
前記金属薄膜上に前記半導体素子および前記接続部材を覆う絶縁層を形成する工程と、
前記金属薄膜を所定形状の薄膜端子に形成する工程と、
をこの工程の順に行うことを特徴とする半導体装置の製造方法。
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JP2011519425A JP5497030B2 (ja) | 2009-06-24 | 2009-06-24 | 半導体装置および半導体装置の製造方法 |
CN200980160041.4A CN102804363B (zh) | 2009-06-24 | 2009-06-24 | 半导体装置及半导体装置的制造方法 |
PCT/JP2009/061491 WO2010150365A1 (ja) | 2009-06-24 | 2009-06-24 | 半導体装置および半導体装置の製造方法 |
KR1020117029284A KR20140058698A (ko) | 2009-06-24 | 2009-06-24 | 반도체 장치 및 반도체 장치의 제조 방법 |
US13/375,719 US8866296B2 (en) | 2009-06-24 | 2009-06-24 | Semiconductor device comprising thin-film terminal with deformed portion |
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TW201128812A (en) | 2009-12-01 | 2011-08-16 | Lg Innotek Co Ltd | Light emitting device |
TWI514635B (zh) * | 2011-12-29 | 2015-12-21 | Hon Hai Prec Ind Co Ltd | 發光二極體燈條及其製造方法 |
KR101540070B1 (ko) * | 2014-10-27 | 2015-07-29 | 삼성전자주식회사 | 패키지 기판 및 반도체 패키지의 제조방법 |
KR101724904B1 (ko) | 2015-09-16 | 2017-04-07 | 현대자동차주식회사 | 연료전지 시스템용 수소 공급 조절 장치 |
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US8866296B2 (en) | 2014-10-21 |
CN102804363A (zh) | 2012-11-28 |
KR20140058698A (ko) | 2014-05-15 |
JP5497030B2 (ja) | 2014-05-21 |
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