WO2010117229A2 - Procédé de disposition de particules fines sur un substrat au moyen d'une pression physique - Google Patents

Procédé de disposition de particules fines sur un substrat au moyen d'une pression physique Download PDF

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Publication number
WO2010117229A2
WO2010117229A2 PCT/KR2010/002181 KR2010002181W WO2010117229A2 WO 2010117229 A2 WO2010117229 A2 WO 2010117229A2 KR 2010002181 W KR2010002181 W KR 2010002181W WO 2010117229 A2 WO2010117229 A2 WO 2010117229A2
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WO
WIPO (PCT)
Prior art keywords
fine particles
substrate
template
physical pressure
arranging
Prior art date
Application number
PCT/KR2010/002181
Other languages
English (en)
Korean (ko)
Other versions
WO2010117229A3 (fr
Inventor
윤경병
웬웬칸
팜카오탄툼
Original Assignee
서강대학교산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서강대학교산학협력단 filed Critical 서강대학교산학협력단
Priority to EP10761890.2A priority Critical patent/EP2418170B1/fr
Priority to JP2012504622A priority patent/JP5814224B2/ja
Priority to KR1020117026434A priority patent/KR101341259B1/ko
Priority to US13/263,689 priority patent/US9994442B2/en
Publication of WO2010117229A2 publication Critical patent/WO2010117229A2/fr
Publication of WO2010117229A3 publication Critical patent/WO2010117229A3/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00373—Selective deposition, e.g. printing or microcontact printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/025—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet
    • B41M5/03—Duplicating or marking methods; Sheet materials for use therein by transferring ink from the master sheet by pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/22—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of impact or pressure on a printing material or impression-transfer material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B5/00—Single-crystal growth from gels
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24851—Intermediate layer is discontinuous or differential
    • Y10T428/24868—Translucent outer layer
    • Y10T428/24876—Intermediate layer contains particulate material [e.g., pigment, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Composite Materials (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Printing Methods (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Micromachines (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé de disposition de particules fines sur un substrat, consistant à préparer un premier modèle dont la surface porte une première intaille ou un premier relief capable de fixer la position et/ou l'alignement d'une ou deux particules; et à placer une pluralité de particules fines sur le premier modèle et à insérer une partie ou l'ensemble des particules fines dans les pores formés par la première intaille ou le premier relief par pression physique. L'invention concerne également un procédé de disposition de particules fines sur un substrat, consistant à préparer un premier modèle dont au moins une partie de la surface est adhésive; et à placer au moins deux particules fines uniquement composées de surfaces courbes continues, sans facettes plates, sur la surface adhésive du premier modèle, et à disposer les particules fines sur le premier modèle par pression physique.
PCT/KR2010/002181 2009-04-09 2010-04-09 Procédé de disposition de particules fines sur un substrat au moyen d'une pression physique WO2010117229A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP10761890.2A EP2418170B1 (fr) 2009-04-09 2010-04-09 Procédé de disposition de particules fines sur un substrat au moyen d'une pression physique
JP2012504622A JP5814224B2 (ja) 2009-04-09 2010-04-09 物理的圧力によって微粒子を基材上に配置させる方法
KR1020117026434A KR101341259B1 (ko) 2009-04-09 2010-04-09 물리적 압력에 의해 미립자를 기재 상에 배치시키는 방법
US13/263,689 US9994442B2 (en) 2009-04-09 2010-04-09 Method for arranging fine particles on substrate by physical pressure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090030647 2009-04-09
KR10-2009-0030647 2009-04-09

Publications (2)

Publication Number Publication Date
WO2010117229A2 true WO2010117229A2 (fr) 2010-10-14
WO2010117229A3 WO2010117229A3 (fr) 2011-01-27

Family

ID=42936380

Family Applications (3)

Application Number Title Priority Date Filing Date
PCT/KR2009/002077 WO2010117102A1 (fr) 2009-04-09 2009-04-21 Procede d'alignement de cristaux colloïdaux sous forme de monocristaux
PCT/KR2010/002181 WO2010117229A2 (fr) 2009-04-09 2010-04-09 Procédé de disposition de particules fines sur un substrat au moyen d'une pression physique
PCT/KR2010/002180 WO2010117228A2 (fr) 2009-04-09 2010-04-09 Procédé de fabrication d'un produit imprimé par alignement et impression de particules fines

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/002077 WO2010117102A1 (fr) 2009-04-09 2009-04-21 Procede d'alignement de cristaux colloïdaux sous forme de monocristaux

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002180 WO2010117228A2 (fr) 2009-04-09 2010-04-09 Procédé de fabrication d'un produit imprimé par alignement et impression de particules fines

Country Status (6)

Country Link
US (2) US9181085B2 (fr)
EP (2) EP2418170B1 (fr)
JP (2) JP5668052B2 (fr)
KR (2) KR101341259B1 (fr)
TW (2) TWI388434B (fr)
WO (3) WO2010117102A1 (fr)

Cited By (3)

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US9290859B2 (en) 2010-09-08 2016-03-22 Industry-University Cooperation Foundation Sogang University Film formed by secondary growth of seed crystals, three crystal axes of which had all been uniformly oriented on substrate
US9695055B2 (en) 2012-06-15 2017-07-04 Intellectual Discovery Co., Ltd. Synthetic gel for crystal growth inducing only secondary growth from surface of silicalite-1 or zeolite beta seed crystal
US10384947B2 (en) 2012-06-15 2019-08-20 Intellectual Discovery Co., Ltd. Substrate having at least one partially or entirely flat surface and use thereof

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KR101255780B1 (ko) 2011-04-11 2013-04-17 서강대학교산학협력단 보울-형태 구조체, 이의 제조 방법, 및 보울 어레이
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KR20120009484A (ko) 2012-01-31
EP2418169A2 (fr) 2012-02-15
EP2418169B1 (fr) 2017-12-13
JP5814224B2 (ja) 2015-11-17
TWI388434B (zh) 2013-03-11
JP2012523311A (ja) 2012-10-04
US9181085B2 (en) 2015-11-10
TWI388435B (zh) 2013-03-11
EP2418170B1 (fr) 2016-08-31
TW201110205A (en) 2011-03-16
EP2418169A4 (fr) 2013-07-10
US20120100364A1 (en) 2012-04-26
JP5668052B2 (ja) 2015-02-12
EP2418170A2 (fr) 2012-02-15
US9994442B2 (en) 2018-06-12
JP2012523323A (ja) 2012-10-04
WO2010117229A3 (fr) 2011-01-27
WO2010117102A1 (fr) 2010-10-14
WO2010117228A3 (fr) 2011-01-27
KR101341259B1 (ko) 2013-12-13
WO2010117228A2 (fr) 2010-10-14
KR20120022876A (ko) 2012-03-12
EP2418170A4 (fr) 2013-07-10
US20120114920A1 (en) 2012-05-10
TW201103769A (en) 2011-02-01

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