WO2010092901A1 - フォトマスク、フォトマスクの製造方法及び修正方法 - Google Patents
フォトマスク、フォトマスクの製造方法及び修正方法 Download PDFInfo
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- WO2010092901A1 WO2010092901A1 PCT/JP2010/051635 JP2010051635W WO2010092901A1 WO 2010092901 A1 WO2010092901 A1 WO 2010092901A1 JP 2010051635 W JP2010051635 W JP 2010051635W WO 2010092901 A1 WO2010092901 A1 WO 2010092901A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/28—Phase shift masks [PSM]; PSM blanks; Preparation thereof with three or more diverse phases on the same PSM; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Definitions
- the film thickness difference is preferably formed by dry etching.
- a light shielding region is formed on the outer periphery of the photomask.
- an ArF excimer laser is used as an exposure light source, and is used for projection exposure by modified illumination.
- the main pattern is transferred onto one main surface of the transparent substrate by the projection exposure and transferred to the transfer target surface.
- a photomask manufacturing method provided with an auxiliary pattern formed in the vicinity of a pattern and not transferred to the transfer target surface, wherein (a) a semitransparent film and a light-shielding film are sequentially formed on one main surface of the transparent substrate.
- a step of setting the film thickness so that the phase difference between the light transmitted through the translucent film and the light transmitted through the transparent region of the transparent substrate is approximately 180 degrees; and (b) forming a first resist pattern on the light shielding film.
- the semi-transparent film of the auxiliary pattern portion is dry-etched until the film thickness is such that the light transmitted through the auxiliary pattern and the light transmitted through the transparent region of the transparent substrate have a predetermined phase difference in the range of 70 to 115 degrees.
- Forming an auxiliary pattern and (e) forming a main pattern by etching and removing the light-shielding film of the main pattern portion, and transmitting light through the main pattern and light transmitted through a transparent region of the transparent substrate. And a step of generating a phase difference of 180 degrees in the photomask manufacturing method.
- an ArF excimer laser is used as an exposure light source, and is used for projection exposure by modified illumination.
- the main pattern is transferred onto one main surface of the transparent substrate by the projection exposure and transferred to the transfer target surface.
- a photomask manufacturing method provided with an auxiliary pattern formed in the vicinity of a pattern and not transferred to the transfer target surface, wherein (a) a semitransparent film and a light-shielding film are sequentially formed on one main surface of the transparent substrate.
- the translucent film is composed of two translucent films, and the lower translucent film on the transparent substrate side also serves as an etching stop layer for the upper translucent film, and transmits light through the two translucent films.
- a film thickness difference between the thickness of the auxiliary pattern after correction, which is thinned by etching or grinding, and the thickness of the auxiliary pattern before correction is in the range of 1 nm to 40 nm. .
- the main pattern and the auxiliary pattern are composed of a light shielding film.
- the auxiliary pattern is corrected by the above-described photomask correction method, and the film thickness of the auxiliary pattern after correction is smaller than the film thickness of the auxiliary pattern before correction. I will provide a.
- the conventionally used halftone mask blanks can be used as they are, and it is not necessary to change the mask blanks material.
- Mask blank compatibility can be ensured for a halftone mask that does not use an auxiliary pattern, and mask quality can be maintained and mask cost can be reduced.
- the photomask of the present invention by setting the film thickness difference between the main pattern and the auxiliary pattern within a predetermined range, a part of the auxiliary pattern is missing, the auxiliary pattern is peeled off from the substrate surface, or the auxiliary pattern is its line. Occurrence of a phenomenon of falling down in the width direction can be suppressed.
- the auxiliary pattern that should not be transferred to the transfer target surface is resolved in the photomask correction method when the auxiliary pattern is resolved to the transfer target surface.
- the photomask can be modified to form a transfer image with high contrast.
- the photomask correcting method of the present invention is a method of correcting the auxiliary pattern by thinning the auxiliary pattern in the thickness direction. It is possible to reliably correct by an easy method.
- FIG. 6 is a schematic plan view (a) of a QUASAR pupil filter used in the simulation, a schematic perspective view (b) when the mask is irradiated with exposure light using QUASAR, and a schematic plan view (c) of the mask pattern 194.
- FIG. 17 is a diagram showing a relationship between an SRAF etching amount (on a mask) and SRAF CD (a dimension on a wafer) in the embodiment shown in FIG. 16.
- FIG. 17 is a diagram illustrating an influence of an SRAF etching amount error on a mask on a main pattern CD error on a wafer in the embodiment illustrated in FIG. 16.
- FIG. 30 is a partial enlarged view of FIG.
- the photomask of the present invention is a mask used for projection exposure with ArF excimer laser as an exposure light source, preferably a fine semiconductor element having a half pitch on the wafer of 65 nm or less, and further 45 nm and 32 nm. It is a mask intended to be used for formation.
- NILS is expressed by the following mathematical formula (1).
- W is a desired pattern dimension
- I th is a threshold value of light intensity giving W
- (dI / dx) is a gradient of the aerial image.
- NILS (dI / dx) / (W ⁇ I th ) (1)
- MEEF is expressed by the following mathematical formula (2), and is represented by the ratio of the pattern dimension change amount ( ⁇ wafer CD) on the wafer to the mask dimension change amount ( ⁇ mask CD).
- CD indicates the critical dimension of the mask or wafer.
- the numerical value 4 in the formula (2) is a reduction ratio of the mask, and illustrates a case where a general quadruple mask is used. As shown in Equation (2), the smaller the MEEF value (near 1), the mask pattern is faithfully transferred to the wafer pattern. If the MEEF value decreases, the wafer manufacturing yield improves. As a result, the mask manufacturing yield used for wafer manufacturing is also improved.
- MEEF ⁇ wafer CD / ⁇ mask CD / 4 (2)
- FIG. 4A is a schematic plan view of the Cquad 31
- FIG. 4B is a schematic perspective view when the mask 33 is irradiated with exposure light using the Cquad 31.
- FIG. Cquad 31 had an opening angle of the fan-shaped light transmission part of 35 degrees, an outer diameter of 0.9, and an inner diameter of 0.7 (the radius of the pupil filter is 1).
- a conventional half-tone mask of 6% transmittance (denoted as 6% half-tone) at an exposure wavelength of 193 nm of a general molybdenum silicide type and a molybdenum silicide type binary mask for comparison are used.
- the target line dimension on the wafer was 45 nm, and the pattern was a line / space repetitive pattern with a pitch of 90 nm (half pitch 45 nm).
- FIG. 20 and 21 are diagrams showing the relationship between the mask bias and transfer characteristics at a transfer target size of 45 nm on the wafer obtained by the above simulation in the conventional halftone mask and binary mask, and FIG. FIG. 21 shows the relationship between MEEF and mask CD. *
- the NILS shown in FIG. 20 shows the maximum value in the mask CD 32 nm to 44 nm (on the wafer) with the mask bias set to the negative side and the line pattern dimension reduced.
- the NILS tends to increase as the mask pattern is increased on the positive side and the line pattern size is increased.
- both the halftone mask and the binary mask have a smaller MEEF as the line pattern size is reduced by reducing the mask bias, but the halftone mask is smaller than the binary mask. Value, more preferred.
- the mask NI of the maximum NILS and the mask of the minimum MEEF are almost the same.
- the binary mask NILS and MEEF are in a contradictory relationship, and it is understood that if one characteristic is improved, the other characteristic is deteriorated.
- a halftone mask is more suitable than a binary mask for pattern formation with a half pitch of 45 nm or less. Therefore, as described in the present invention, it is one of the preferred choices to use a halftone mask as a photomask for pattern formation with a half pitch of 45 nm or less.
- FIG. 22 is a diagram showing a mask CD of a conventional halftone mask and binary mask and exposure margin (also referred to as exposure latitude, also referred to as exposure latitude).
- the exposure margin is a value indicating an exposure margin for obtaining a good resist size / shape.
- the exposure margin is evaluated under the condition that the error of the wafer transfer CD is ⁇ 3.8 nm or less when the focal plane is shifted within a range of ⁇ 50 nm and the main pattern mask CD is shifted within a range of ⁇ 2.5 nm. did.
- the mask CD is converted on the wafer, the mask CD of the main pattern to be transferred is shown.
- FIG. 22 is a diagram showing a mask CD of a conventional halftone mask and binary mask and exposure margin (also referred to as exposure latitude, also referred to as exposure latitude).
- the exposure margin is a value indicating an exposure margin for obtaining a good resist size / shape.
- the exposure margin is evaluated under the condition that the error of the wafer
- the halftone mask (dotted line in the figure) shows the best exposure margin of 8.3% when the mask CD is 32 nm, and the same exposure margin as the binary mask (solid line) when the mask CD is 40 nm. Degree.
- the binary mask shows the best exposure margin of 7% when the mask CD is 46 nm, but the exposure margin is smaller than that of the halftone mask.
- FIG. 4 is an evaluation pattern (FIG. 4A) used in the present invention and a diagram of an aerial image showing the light intensity corresponding to the position of the evaluation pattern (FIG. 4B).
- the evaluation pattern has nine lines / spaces with a half pitch of 45 nm as the main pattern, and two SRAFs at both ends of the main pattern in order to improve the resolution of the main pattern at the end (the half pitch of SRAF is the same as the main pattern).
- the same pattern is repeated, with a 400 nm space in between. Both the main pattern and SRAF are the above 6% halftone. *
- auxiliary pattern SRAF
- FIG. 4 the horizontal axis shows the position of a pair of patterns of the main pattern and SRAF, and the vertical axis shows the normalized light intensity when the light intensity of the transmission part having no pattern is 1.
- a slice level indicated by a solid line is a standardized light intensity threshold. The slice level varies depending on the dimensions of the main mask pattern. If the minimum light intensity of the SRAF portion indicated by the arrow in the figure falls below the slice level, it means that the SRAF is resolved on the wafer. *
- FIG. 23 shows the slice level of the standardized light intensity threshold for the SRAF CD (horizontal axis) on the wafer in the halftone mask and binary mask when the film thickness is constant based on the prior art. It is a figure which shows ratio (vertical axis) of the light intensity of the SRAF part with respect to.
- Halftone masks (triangular points in the figure) show the case where there are three main pattern CDs (32 nm; 36 nm; 40 nm on the wafer). If the above ratio is 1 or less, the SRAF is transferred. Therefore, in order to prevent the SRAF from being transferred, the above ratio must be 1 or more.
- the exposure margin shows the best value, but the SRAF CD is not less than 14 nm (56 nm on the mask). SRAF will be resolved, and it will be understood that the mask manufacturing is difficult.
- FIG. 1 is a partial cross-sectional schematic view showing a first embodiment of a halftone mask having an auxiliary pattern which is a photomask of the present invention, illustrating a case where a line / space pattern is provided, and a synthetic quartz substrate
- a main pattern 12 is provided on a transparent substrate 11 such as a single-layer semi-transparent film that transmits exposure light at a predetermined transmittance and changes phase, and a single layer made of the same material as the main pattern 12 is provided in the vicinity of the main pattern 12.
- This is a halftone mask 10 on which an auxiliary pattern (SRAF) 13 composed of a semi-transparent film is formed.
- SRAF auxiliary pattern
- FIG. 1 only two main patterns 12 and auxiliary patterns 13 and only a part of the mask pattern are illustrated, but the present invention is not limited to this.
- the main pattern may be an isolated pattern or a periodic pattern.
- the halftone mask 10 having the auxiliary pattern according to the present invention causes a phase difference of 180 degrees between the light transmitted through the main pattern 12 and the light transmitted through the transparent area without the pattern on the transparent substrate 11 and transmitted through the auxiliary pattern 13. And a predetermined phase difference in the range of 70 degrees to 115 degrees is set between the transmitted light and the light transmitted through the transparent region of the transparent substrate 11.
- the halftone mask 10 does not resolve the auxiliary pattern 13 while maintaining the focal depth expansion effect as the auxiliary pattern, and the main pattern 12. Transfer images with high contrast can be formed. *
- the halftone mask 10 having the auxiliary pattern of the present invention has a film thickness of the auxiliary pattern 13 smaller than that of the main pattern 12, and a film thickness difference (hereinafter referred to as SRAF film thickness difference).
- SRAF film thickness difference a film thickness difference in the range of 24 nm to 40 nm.
- the predetermined film thickness difference can be formed by selectively dry etching the SRAF part.
- the halftone mask 10 having the auxiliary pattern for example, when the ArF exposure light transmittance of the main pattern causing a phase difference of 180 degrees is 6%, a predetermined phase difference in the range of 70 degrees to 115 degrees is generated.
- the ArF exposure light transmittance of the auxiliary pattern to be formed is a predetermined transmittance in the range of 15% to 29%.
- the translucent film constituting the main pattern 12 and the auxiliary pattern 13 of the halftone mask 10 of the present invention shown in FIG. 1 is not particularly limited as a material.
- molybdenum silicide oxidation which is a molybdenum silicide material is used.
- examples thereof include semitransparent films such as a film (MoSiO), a molybdenum silicide nitride film (MoSiN), and a molybdenum silicide oxynitride film (MoSiON).
- the molybdenum silicide-based translucent film is practically used as a halftone mask material and is a more preferable material. *
- MoSiO molybdenum silicide oxide film
- the translucent film constituting the main pattern 12 and the auxiliary pattern 13 is, for example, a translucent film made of molybdenum silicide material, fluorine-based gas such as CF 4 , CHF 3 , C 2 F 6 , or a mixed gas thereof
- fluorine-based gas such as CF 4 , CHF 3 , C 2 F 6
- dry etching can be performed by using a gas in which oxygen is mixed with these gases as an etching gas to form a pattern.
- the surface of the transparent substrate is usually slightly etched and dug (see FIG. 1 (not shown).
- the digging depth of the surface of the transparent substrate where there is no mask pattern is preferably controlled to a depth in the range of 0 to 10 nm. If the digging depth exceeds 10 nm, the mask characteristics will be adversely affected. Therefore, in the halftone mask of the present invention, the etching depth on the surface of the transparent substrate is controlled to a predetermined depth in the range of 0 to 10 nm, and the phase difference including this depth is set in advance.
- the digging depth at which any halftone mask is etched is 4 nm, but other etching depths may be used as long as they are in the range of 0 to 10 nm. *
- the halftone mask of this embodiment for example, when molybdenum silicide having a film thickness of 68 nm is used as a semitransparent film, the main pattern (film thickness 68 nm) has an ArF excimer laser transmittance of 6%, a transparent region of the transparent substrate, and the like.
- the auxiliary pattern has a predetermined film thickness difference in the range of 24 nm to 40 nm with respect to the main pattern and the auxiliary pattern has a predetermined level in the range of 70 degrees to 115 degrees with the transparent region of the transparent substrate.
- a halftone mask that is a phase difference can be shown. *
- another embodiment of the photomask of the present invention is a halftone mask made up of two layers of translucent films shown in FIG.
- the main pattern and the auxiliary pattern are composed of two semi-transparent films made of the same material, and the lower semi-transparent film 24 on the transparent substrate side is an etching stop layer at the time of dry etching of the upper semi-transparent film 25. It has a function and also has a function as a translucent film.
- the upper semi-transparent film 25 the above molybdenum silicide-based material can be exemplified.
- the lower semitransparent film 24 is preferably a chromium oxide film (CrO), a chromium nitride film (CrN), or a chromium oxynitride film (CrON), which is a chromium-based material.
- CrO chromium oxide film
- CrN chromium nitride film
- CrON chromium oxynitride film
- the chromium-based material is formed by a conventionally known reactive sputtering method, and the unnecessary portion of the chromium-based material thin film can be dry-etched with a chlorine-based gas without damaging the transparent substrate.
- the upper semi-transparent film 25 is formed to a thickness of several tens of nm
- the lower semi-transparent film 24 is formed to a thickness of several nm to several tens of nm.
- a light shielding region may be formed on the outer periphery of the mask.
- the mask outer peripheral portion is subjected to multiple exposure, so a photomask having a light shielding region provided on the mask outer peripheral portion is used. Therefore, also in the present invention, a light-shielding film can be provided on a semi-transparent film in a desired region such as the outer peripheral portion to form a light-shielding region.
- the light-shielding film is formed as a light-shielding region by forming a light-shielding metal film of chromium or the like to a thickness of about several tens to 200 nm and patterning.
- FIG. 5 shows a difference between SRAF film thickness difference (horizontal axis) and SRAF light intensity / standardized light intensity threshold when the SRAF CD is changed in a halftone mask having a main pattern CD of 32 nm on the wafer. It is a figure which shows the relationship with a slice level (vertical axis). If the SRAF light intensity / slice level is not 1 or more, the SRAF is resolved on the wafer.
- the SRAF CD is as fine as 14 nm (56 nm on the mask)
- the SRAF is not transferred even if the SRAF film thickness difference is 0, that is, the same as the main pattern film thickness (68 nm).
- the SRAF CD is 22 nm (88 nm on the mask) and the SRAF film thickness difference is 24 nm or more
- the SRAF is not resolved and transferred.
- the SRAF CD is 26 nm (104 nm on the mask)
- the SRAF film thickness difference is 30 nm or more
- the SRAF CD is 30 nm (88 nm on the mask)
- the SRAF film thickness difference is 34 nm or more. SRAF is not transferred.
- the SRAF CD is 14 nm or less.
- the SRAF CD is increased to 26 nm to 30 nm, which is twice as large as the conventional size, the SRAF is not used. It can be used without being resolved and transferred.
- SRAF thin film can be easily formed by selectively dry etching the SRAF portion. Since the SRAF dimension can be increased to about twice that of the prior art, it is possible to use a halftone mask having an SRAF made of the same material, which has been difficult to miniaturize and difficult to use.
- FIG. 6 is a diagram showing the relationship between the CD at the end of the main pattern on the wafer and the defocus (Defocus) when the SRAF CD is changed.
- Each SRAF CD is etched so that the SRAF is not resolved, and has a film thickness of the main pattern and a predetermined film thickness difference (24 nm, 32 nm, 40 nm).
- a predetermined film thickness difference 24 nm, 32 nm, 40 nm.
- the photomask of the present invention can form a transfer image with high contrast while maintaining the effect of expanding the depth of focus as the auxiliary pattern by thinning only the auxiliary pattern portion. Furthermore, the dimension of the auxiliary pattern can be increased to about twice the conventional dimension, and by reducing the aspect ratio of the auxiliary pattern, an effect of reducing the chipping and falling of the auxiliary pattern can be obtained. Further, when a molybdenum silicide-based single layer film is used as the photomask of the present invention, the mask blanks for halftone masks that have been used in the past can be used as they are, the mask quality is maintained, and high accuracy is achieved. A mask having a fine pattern can be used. *
- the photomask manufacturing method of the present invention is characterized in that a predetermined phase difference in the range of 70 degrees to 115 degrees is generated between the light transmitted through the auxiliary pattern and the light transmitted through the transparent region of the transparent substrate.
- the film thickness of the auxiliary pattern is thinner than that of the main pattern, and is set to a predetermined film thickness difference in the range of 24 nm to 40 nm.
- the predetermined film thickness difference includes a method of changing the film thickness according to the pattern when forming the semitransparent film, and a method of etching the semitransparent film according to the pattern after forming the semitransparent film. There is a way to change.
- the photomask manufacturing method of the present invention is based on the latter etching method that is easy to manufacture and provides a high-accuracy mask.
- FIG. 11 is a process cross-sectional schematic diagram when the photomask of the present invention is manufactured using a known conventional manufacturing method.
- a semi-transparent film 112 is formed on the transparent substrate 111, and the film thickness is such that the phase difference between the light transmitted through the semi-transparent film and the light transmitted through the transparent region of the transparent substrate is 180 degrees.
- the light shielding film 113 is formed on the translucent film (FIG. 11A).
- a first resist pattern 114 is formed on the light shielding film 113, and the light shielding film 113 and the translucent film 112 are sequentially dry etched to form a main pattern portion 115 and an auxiliary pattern portion 116 (FIG. 11B). ).
- the first resist pattern 154 is peeled off, and the light shielding film in the exposed pattern portion is removed by etching (FIG. 11C).
- the main pattern portion 115 is covered with the second resist pattern 117, and the translucent film of the auxiliary pattern portion is made up to a film thickness at which the light transmitted through the auxiliary pattern portion and the light transmitted through the transparent region of the transparent substrate have a predetermined phase difference.
- an auxiliary pattern 118 is formed by dry etching (FIG. 11D), and the second resist pattern 117 is peeled to obtain a halftone mask 110 (FIG. 11E). *
- the surface of the transparent substrate 111 that is not covered with the second resist pattern 117 is simultaneously etched during the dry etching of the semitransparent film of the auxiliary pattern portion 116, as shown in FIG.
- the level difference 121 is generated on the surface of the transparent substrate 111 at the boundary surface of the resist pattern 117, which causes a problem that the mask quality is deteriorated and cannot be used practically. Therefore, the conventional mask manufacturing method described above cannot be applied to the manufacturing of the photomask of the present invention.
- the photomask manufacturing method of the present invention is a manufacturing method that solves the above-described problems, and uses ArF excimer laser as an exposure light source, is used for projection exposure by modified illumination, and is transferred onto a transparent substrate by projection exposure.
- This is a method of manufacturing a photomask provided with a main pattern transferred to a target surface and an auxiliary pattern formed in the vicinity of the main pattern and not transferred to the transfer target surface.
- FIG. 7 is a process cross-sectional schematic diagram showing the first embodiment of the method for producing the photomask of the present invention shown in FIG.
- a translucent film 72 is formed on a transparent substrate 71 such as a synthetic quartz substrate, and the phase difference between the light transmitted through the translucent film 72 and the light transmitted through the transparent region of the transparent substrate 71.
- a photomask blank in which the light shielding film 73 is formed on the semitransparent film 72 is prepared.
- a conventionally known method can be applied to form the semitransparent film 72 and the light shielding film 73.
- the semitransparent film 72 is a molybdenum silicide oxide film (MoSiO)
- a reactive sputtering method in a mixed gas atmosphere of argon and oxygen.
- the light shielding film 73 is a metal film such as chromium, it can be formed by forming a predetermined film thickness by sputtering or the like.
- the film thickness of the translucent film 72 is set to a film thickness at which the phase difference of light is approximately 180 degrees for the following reason.
- the surface of the transparent substrate 71 is usually slightly etched.
- the etching depth is preferably 4 nm, and the upper limit is set to 10 nm in the present invention. If it exceeds 10 nm, the mask characteristics will be adversely affected. Therefore, in the halftone mask of the present invention, the etching depth of the surface of the transparent substrate 71 during the dry etching of the semitransparent film 72 is controlled to a predetermined depth in the range of 0 to 10 nm, and this depth is included in advance. The phase difference is set.
- the thickness of the semi-transparent film at the time of film formation is set to a film thickness in which the phase difference is approximately 180 degrees in consideration of the variation due to the etching of the transparent substrate in advance, and finally the phase difference of 180 degrees after the main pattern is formed. Is what you get.
- the predetermined etching depth is described as 4 nm as an example.
- an atomic force microscope (AFM) was used for measuring the film thickness, and a phase difference was measured using a phase shift amount measuring device (Lasertec Corporation: MPM193). *
- a first resist pattern 74 is formed on the light shielding film 73, and the light shielding film 73 and the semi-transparent film 72 are sequentially dry-etched into a pattern to form a main pattern portion 75 and an auxiliary pattern portion 76 (see FIG. FIG. 7B).
- the first resist pattern 74 is removed, a second resist pattern 77 is formed on the light shielding film, and the light shielding film 73 of the auxiliary pattern portion 76 is removed by etching (FIG. 7C). . *
- the translucent film 72 is a translucent film made of, for example, molybdenum silicide, a fluorine-based gas such as CF 4 , CHF 3 , C 2 F 6 , a mixed gas thereof, or a mixture of these gases with oxygen
- a fluorine-based gas such as CF 4 , CHF 3 , C 2 F 6 , a mixed gas thereof, or a mixture of these gases with oxygen
- this gas By using this gas as an etching gas, dry etching can be performed to form a pattern.
- the light shielding film 73 is, for example, chromium
- dry etching is performed using a mixed gas of Cl 2 and oxygen as an etching gas, and the pattern can be formed without damaging the translucent film 72 and the transparent substrate 71. it can.
- the light shielding film 73 can be removed by wet etching with an aqueous solution of ceric ammonium nitrate instead of dry etching.
- the second resist pattern 77 is peeled off, and the entire upper surface of the transparent substrate 71 is dry-etched under the etching conditions of the semi-transparent film 72, so that the light transmitted through the auxiliary pattern and the transparent region of the transparent substrate 71 are transmitted.
- the auxiliary pattern 78 is formed by dry etching the semi-transparent film of the auxiliary pattern portion until the light reaches a predetermined phase difference in the range of 70 ° to 115 ° (FIG. 7D).
- the etching amount of the auxiliary pattern 78 for obtaining the above phase difference corresponds to a predetermined film thickness range of 24 nm to 40 nm in terms of the film thickness difference from the semi-transparent film of the main pattern portion.
- the main pattern portion is covered with the light shielding film 73, it is not etched and the film thickness at the time of forming the semitransparent film is maintained.
- uniform and highly accurate etching can be performed on the entire mask surface, and the phase difference of the auxiliary pattern 78 can be controlled to a predetermined value with high accuracy.
- FIG. 8 is a process cross-sectional schematic diagram showing a second embodiment of the method of manufacturing the photomask of the present invention shown in FIG. 1, and the semitransparent film 82 is formed on the transparent substrate 81 as in FIG.
- the film thickness is such that the phase difference between the light transmitted through the translucent film 82 and the light transmitted through the transparent region of the transparent substrate 81 is approximately 180 degrees, and then a light shielding film 83 is formed on the translucent film 82.
- the formed photomask blanks are prepared (FIG. 8A).
- a first resist pattern 84 is formed on the light shielding film 83, the light shielding film 83 and the semitransparent film 82 are sequentially dry etched, and the etching is stopped in the middle of the half etching of the semitransparent film 82.
- a thin layer of the semitransparent film 82 to be removed remains partially on the transparent substrate 81 in a half-etched state, but the main pattern portion 85 and the auxiliary pattern portion 86 leave a half-etched portion. (FIG. 8B).
- the film thickness of the half-etched portion of the semi-transparent film 82 that has been half-etched at this stage is set in advance so as to be a film thickness that is removed by etching simultaneously with the etching of the auxiliary pattern in a later step.
- the first resist pattern 84 is peeled off, a second resist pattern 87 is formed on the light shielding film, and the light shielding film in the auxiliary pattern portion is etched and removed (FIG. 8C).
- the light shielding film 83 can be removed by either dry etching or wet etching.
- the second resist pattern 87 is peeled off, and the entire main surface of the transparent substrate 81 is dry-etched under the etching conditions of the semitransparent film 82, so that the light transmitted through the auxiliary pattern and the transparent region of the transparent substrate 81 are transmitted.
- the auxiliary pattern 88 is formed by dry etching the semi-transparent film of the auxiliary pattern portion until the light reaches a predetermined phase difference in the range of 70 ° to 115 ° (FIG. 8D).
- the etching amount of the auxiliary pattern 88 for obtaining the above phase difference corresponds to a predetermined film thickness difference in the range of 24 nm to 40 nm in terms of the film thickness difference from the main pattern.
- the half-etched portion of the semi-transparent film 82 that remains after being half-etched is etched simultaneously. Since the main pattern portion is covered with the light shielding film 83, it is not etched. *
- the light shielding film in the main pattern portion is removed by etching to form the main pattern 89, and a phase difference of 180 degrees is generated between the light transmitted through the main pattern 89 and the light transmitted through the transparent region of the transparent substrate 81.
- the halftone mask 80 having the auxiliary pattern 88 is formed (FIG. 8E).
- the light shielding film 83 can be removed by either dry etching or wet etching. *
- the high-quality halftone mask 80 having the auxiliary pattern 88 is obtained without causing the step as described in FIG. 11 on the surface of the transparent substrate 81. be able to.
- FIG. 9 is a process cross-sectional schematic diagram showing an embodiment of a method for producing the photomask of the present invention shown in FIG.
- a semi-transparent film 92a and a semi-transparent film 92 are sequentially formed on a transparent substrate 91 such as a synthetic quartz substrate to form two layers of semi-transparent films.
- the lower semi-transparent film 92a functions as an etching stopper layer when the upper semi-transparent film 92 is dry-etched, and also functions as a mask material for the semi-transparent film.
- the phase difference between the light transmitted through the two-layer semi-transparent film and the light transmitted through the transparent region of the transparent substrate 91 is set to a film thickness that is approximately 180 degrees.
- the formed photomask blanks are prepared.
- a conventionally known method can be applied to the formation of the semitransparent film 92a, the semitransparent film 92, and the light shielding film 93.
- a chromium oxide film (CrO), a chromium nitride film (CrN), or a chromium oxynitride film (CrON), which is a chromium-based material is used as the lower semi-transparent film 92a.
- a chromium oxide film (CrO), a chromium nitride film (CrN), or a chromium oxynitride film (CrON) which is a chromium-based material. This is because the thin film of the chromium-based material is translucent to the exposure light and is resistant to the fluorine-based gas used for dry etching of the molybdenum silicide-based material.
- the chromium-based material can be formed by a conventionally known reactive sputtering method.
- the upper semi-transparent film 92 the above molybdenum silicide-based material can be exemplified.
- the translucent film 92 is a molybdenum silicide oxide film (MoSiO)
- MoSiO molybdenum silicide oxide film
- the light shielding film 93 is made of chromium, and can be formed by forming a predetermined film thickness by sputtering or the like. *
- a first resist pattern 94a is formed on the light shielding film 93, and the light shielding film 93, the semi-transparent film 92, and the semi-transparent film 92a are sequentially dry-etched into a pattern, thereby the main pattern portion 95 and the auxiliary pattern portion. 96 is formed (FIG. 9B). During the etching of the semitransparent film 92a, the transparent substrate 91 is not damaged.
- the light shielding film 93 is, for example, chromium
- dry etching is performed using a mixed gas of Cl 2 and oxygen as an etching gas without damaging the translucent film and the transparent substrate.
- a pattern can be formed.
- the translucent film 92 is, for example, a translucent film of molybdenum silicide material, fluorine-based gas such as CF 4 , CHF 3 , C 2 F 6 , a mixed gas thereof, or a mixture of these gases with oxygen
- fluorine-based gas such as CF 4 , CHF 3 , C 2 F 6 , a mixed gas thereof, or a mixture of these gases with oxygen
- dry etching can be performed to form a pattern.
- the translucent film 92a is a chromium-based material such as a chromium oxynitride film
- dry etching can be performed using a mixed gas of Cl 2 and oxygen as an etching gas.
- the light-shielding film 93 may be etched by dry etching or by wet etching with an aqueous solution of ceric ammonium nitrate.
- the second resist pattern 94b is peeled off, and the entire main surface of the transparent substrate 91 is dry-etched under the etching conditions of the semi-transparent film 92, so that the light transmitted through the auxiliary pattern and the transparent region of the transparent substrate 91 are transmitted.
- the auxiliary pattern 98 is formed by dry etching the semi-transparent film of the auxiliary pattern portion until the light reaches a predetermined phase difference in the range of 70 ° to 115 ° (FIG. 9D).
- the etching amount of the auxiliary pattern 98 for obtaining the above phase difference corresponds to a predetermined film thickness difference in the range of 24 nm to 40 nm as a film thickness difference from the main pattern. Since the main pattern portion is covered with the light shielding film 93, it is not etched. *
- the light shielding film 93 in the main pattern portion is removed by etching to form the main pattern 99, the auxiliary pattern 98 is provided, and the light transmitted through the main pattern 99 and the light transmitted through the transparent region of the transparent substrate 91 are converted.
- a halftone mask 90 that generates a phase difference of 180 degrees is formed (FIG. 9E).
- the light shielding film 93 can be removed by either dry etching or wet etching. *
- the transparent substrate 91 has no level difference as described with reference to FIG.
- FIG. 10 is a process cross-sectional schematic diagram showing a fourth embodiment of a method for producing a photomask of the present invention.
- the fourth embodiment is a method for manufacturing a photomask in the case where the light shielding film at a predetermined location required in the first to third embodiments is left.
- the outer periphery of the mask is subjected to multiple exposure, so a photomask having a light shielding region provided on the outer periphery of the mask is used.
- the fourth embodiment is an example in which a light shielding region is provided on the outer periphery of the photomask, and the intermediate steps are the same as the steps shown in the first to third embodiments. Therefore, referring to FIG. However, this will be described with reference to FIG. In FIG. 10, the same parts as those in FIG.
- FIG. 10 illustrates the case where the light shielding film 104 is left as a light shielding region on the outer periphery of the photomask.
- the etching amount of the SRAF corresponds to the phase difference of the SRAF portion, and the SRAF dimension transferred onto the wafer increases as the etching amount of the SRAF portion increases.
- the etching amount of SRAF indicates a film thickness difference between the SRAF film thickness after etching and the film thickness of the main pattern (the initial film thickness of the semitransparent film: 68 nm).
- FIG. 13 shows the main pattern CD error on the wafer relative to the etching amount error when the SRAF etching amount is 28 nm, 38 nm, and 48 nm in the embodiment in the Cquad illumination shown in FIG. 3, and the larger the SRAF etching amount, It can be seen that the main pattern CD fluctuations in FIG. It is shown that when the SRAF etching amount is 48 nm, a slight etching error greatly affects the size of the main pattern at the repeated end. Therefore, in the present invention, the SRAF etching amount of 48 nm or more (corresponding to the phase difference of 50 degrees or less in Patent Document 2) is an undesirable range in the manufacturing process.
- FIG. 14 shows the relationship between the main pattern CD and the defocus at the repetitive edge on the wafer when the SRAF etching amount is changed every 4 nm in the range of 24 nm to 48 nm in the embodiment in the Cquad illumination shown in FIG. FIG.
- the case where there is no SRAF and the case where there is no SRAF etching is also shown.
- the SRAF etching amount of 44 nm or more is an inappropriate range, and in order to improve the depth of focus and form a high resolution pattern, the SRAF etching amount is 24 nm to 40 nm. Is a preferred range.
- This etching amount corresponds to a phase difference of 115 to 70 degrees. The phase difference was measured with the above-mentioned phase shift amount measuring apparatus (Lasertec Corporation: MPM193). *
- 164 is a schematic plan view of 164.
- FIG. It is. Quasar has an opening angle of the fan-shaped light transmission portion of 30 degrees, an outer diameter of 0.85, and an inner diameter of 0.65 (the radius of the pupil filter is 1).
- a halftone mask (6% halftone) having an auxiliary pattern according to the present invention having a transmittance of 6% at an exposure wavelength of 193 nm of molybdenum silicide was used.
- the target CD on the wafer is 60 nm, one SRAF 166 is provided between the main patterns 165, the pattern pitch is a through pitch line / space from the minimum pitch of 120 nm, and the SRAF 166 is 250 nm in pitch.
- FIG. 17 is a diagram showing the relationship between the SRAF etching amount (on the mask) and the SRAF CD (dimensions on the wafer) in the embodiment of the QUASAR illumination shown in FIG.
- the region where the SRAF etching amount indicated by the dotted arrow in the drawing is 48 nm or more is a region where the phase difference of the SRAF portion is 50 degrees or less (the range described in the invention of Patent Document 2 above). ).
- the original SRAF dimension is very small as 9 nm on the wafer (36 nm on the mask) compared to the condition of the main pattern of line / space repetition end and Cquad shown in FIG. Even in the region where the SRAF etching amount is 48 nm or more, the problem that the SRAF dimension on the wafer is too large does not occur.
- the upper limit of the SRAF etching amount was set to 40 nm. Therefore, in the case of SRAF between main patterns (Quasar illumination), the effect of the photomask of the present invention was verified as in the case of the main pattern repetition end SRAF (Cquad illumination). *
- the main pattern and the auxiliary pattern are composed of a translucent film made of the same material, so that the process of forming the translucent film is easy.
- the phase difference between the light transmitted through the auxiliary pattern and the light transmitted through the transparent region of the transparent substrate is set to a predetermined phase difference in the range of 70 ° to 115 °, and the semi-transparent film of the auxiliary pattern is dry-etched,
- the film thickness difference of the auxiliary pattern as a predetermined film thickness difference in the range of 24 nm to 40 nm, that is, as the etching amount of the auxiliary pattern, a desired phase difference of the auxiliary pattern can be easily obtained.
- the photomask can improve the pattern transfer characteristics without increasing the difficulty of mask manufacturing, by making the space between the main pattern and the auxiliary pattern wider, making it possible to achieve a manufacturing method with increased margin of misalignment. Can be obtained.
- the photomask of the present invention is a main pattern transferred onto a transfer target surface by the projection exposure on one main surface of a transparent substrate, and an auxiliary pattern formed in the vicinity of the main pattern and not transferred to the transfer target surface.
- the main pattern and the auxiliary pattern are made of a translucent film made of the same material, and the film thickness of the auxiliary pattern is smaller than the film thickness of the main pattern.
- the thickness difference is a predetermined film thickness difference in a range of 24 nm to 40 nm.
- the photomask of the present invention by setting the film thickness difference between the main pattern and the auxiliary pattern within a predetermined range, a part of the auxiliary pattern is missing, the auxiliary pattern is peeled off from the substrate surface, or the auxiliary pattern is its line. Occurrence of a phenomenon of falling down in the width direction can be suppressed.
- the same photomask as that shown in FIGS. 1 and 2 described above can be exemplified.
- the photomask of the present invention preferably uses a short wavelength exposure light source as the exposure light source.
- a short wavelength exposure light source include an excimer laser such as an Ar excimer laser and a KrF excimer laser, and an i-line of a mercury lamp.
- an excimer laser is preferable, and an Ar excimer laser is particularly preferable. .
- the photomask of the present invention may be a photomask used for exposure by normal illumination, or may be a photomask used for projection exposure by modified illumination.
- the description of the members of the photomask and other technical features are the same as those described in the above “A. Photomask” and “B. Photomask manufacturing method”. Description is omitted.
- the photomask targeted by the photomask correction method of the present invention is a mask used for projection exposure with ArF excimer laser as an exposure light source, preferably with a half pitch on the wafer of 65 nm.
- the mask further has an auxiliary pattern intended to be used for forming fine semiconductor elements of 45 nm and 32 nm.
- EM-Suite (trade name: manufactured by Panoramic Technology Co., Ltd.) was used as simulation software for estimating the transfer characteristics of the mask pattern.
- the main simulation conditions are the same as those described with reference to FIG.
- FIG. 4 is an evaluation pattern (FIG. 4A) used in the simulation and a diagram of a spatial image showing the light intensity corresponding to the position of the evaluation pattern (FIG. 4B).
- the contents of the evaluation pattern are the same as those described with reference to FIG.
- the transferability of the auxiliary pattern (SRAF) at the end of the line / space pattern is as described above.
- FIG. 23 shows the standard for the SRAF CD (horizontal axis) on the wafer in the halftone mask and the binary mask when the film thickness of the main pattern and the auxiliary pattern (SRAF) obtained by the above simulation is the same. It is a figure which shows ratio (vertical axis) of the light intensity of the SRAF part with respect to the slice level of the converted light intensity threshold value.
- the halftone mask (triangular point in the figure) shows the case where there are three main pattern CDs (32 nm; 36 nm; 40 nm on the wafer). If the above ratio is 1 or less, the SRAF is transferred. Therefore, to prevent the SRAF from being transferred, the above ratio must be set to a value exceeding 1.
- the main pattern CD of the halftone mask indicated by the dotted line in the drawing is 32 nm (128 nm on the mask), the SRAF is resolved unless the SRAF CD is 14 nm (56 nm on the mask) or less.
- FIG. 25 is a schematic cross-sectional view showing a process outline of an embodiment of a method for correcting a photomask having an auxiliary pattern of the present invention, and illustrates a case of a halftone mask provided with a line / space pattern.
- FIG. 25A is a schematic cross-sectional view of a photomask before correction, and a main pattern 12 that transmits exposure light at a predetermined transmittance and changes phase is provided on a transparent substrate 11 such as a synthetic quartz substrate.
- the main pattern 12 is composed of a single-layer translucent film 14, and an auxiliary pattern (SRAF) 13 composed of a translucent film having the same material and thickness as the main pattern 12 is formed in the vicinity of the main pattern 12.
- SRAF auxiliary pattern
- the main pattern 12 and the auxiliary pattern 13 are two, and only a part of the mask pattern is shown, but it is not limited to this.
- the main pattern may be an isolated pattern or a periodic pattern. *
- FIG. 25 (b) is a schematic cross-sectional view showing a state during correction of the photomask in which the auxiliary patterns 13a and 13b are resolved on the wafer.
- the auxiliary patterns 13a and 13b that are resolved on the transfer target surface have properties different from the unnecessary surplus defects that should not be on the mask so-called “black defects”. This is an indispensable region for mask pattern formation on the wafer.
- the auxiliary patterns 13a and 13b that are resolved on the transfer target surface on the mask cannot be detected as defects by a conventional mask defect inspection apparatus that detects black defects.
- the masks having the auxiliary patterns shown in FIGS. 26 (a) to 26 (d) are typical examples.
- As masks to which the correction method of the present invention can be applied there are a main pattern and auxiliary patterns.
- the present invention can also be applied to a mask composed of two layers of semitransparent film / semitransparent film. *
- FIG. 26 (e) and FIG. 26 (f) are partial cross-sectional schematic views showing an example of a binary mask in which the main pattern is formed of a light-shielding film that shields exposure light.
- FIG. 26E shows a mask in which the main pattern 42 is composed of two layers of a light shielding film / semi-transparent film on the transparent substrate 41, and the auxiliary pattern 43 is a mask made of a semi-transparent film.
- the main pattern 42 and the auxiliary pattern 43 are the same.
- FIG. 26F shows a mask in which the main pattern 42 and the auxiliary pattern 43 are formed of the same light shielding film and the same film thickness. *
- the translucent film of the main pattern and the auxiliary pattern in the photomask to which the correction method of the present invention is applied means a translucent thin film that transmits exposure light at a predetermined transmittance.
- the structure may be a semi-transparent single layer film, or a two-layer film or more of a semi-transparent film and a transparent film or another semi-transparent film having different transmittance.
- the light shielding film of the main pattern and the auxiliary pattern in the photomask to which the correction method of the present invention is applied means a thin film that shields the exposure light. It may be a structure of two or more layers having a transparent film. *
- the translucent film constituting the main pattern 42 and the auxiliary pattern 43 of the mask shown in FIGS. 26A to 26E is not particularly limited as a material.
- translucent films such as molybdenum silicide oxide film (MoSiO), molybdenum silicide nitride film (MoSiN), and molybdenum silicide oxynitride film (MoSiON), which are molybdenum silicide materials, and chromium oxide films (CrO), which are chromium materials.
- Molybdenum silicide-based translucent films are practically used as halftone mask materials and are more preferable materials.
- Examples of the transparent film constituting the main pattern 42 shown in FIG. 26C include a silicon oxide film (SiO 2 ).
- a metal thin film such as a chromium film (Cr) is used as the light shielding film constituting the main pattern 42 and the auxiliary pattern 43 of the mask shown in FIG. 26 (f).
- metal silicide thin films such as molybdenum silicide (MoSi).
- the translucent film constituting the main pattern 42 and the auxiliary pattern 43 is, for example, a translucent film of molybdenum silicide material.
- selective etching is performed by using a fluorine-based gas such as CF 4 , CHF 3 , or C 2 F 6 , a mixed gas thereof, or a gas in which oxygen is mixed with these gases as an assist gas.
- the film thickness of the pattern can be selectively reduced.
- the light shielding film constituting the main pattern 42 and the auxiliary pattern 43 is, for example, chromium
- etching is selectively performed using a mixed gas of Cl 2 and oxygen as an assist gas, and the film thickness of the auxiliary pattern is selected. Can be made thinner.
- the effect of thinning the surface of the auxiliary pattern (SRAF) by etching or grinding and correcting the thin film thickness of the auxiliary pattern by the photomask correcting method of the present invention shown in FIG. 25 will be described.
- the shape of the partial cross-sectional view shown in FIG. 26A is a semitransparent film made of molybdenum silicide with a film thickness of 68 nm, and the main pattern (film thickness is 68 nm) is ArF excimer laser light (193 nm).
- a halftone mask having a transmittance of 6%, a phase difference of 180 degrees from the transparent region of the transparent substrate, and a film thickness of the auxiliary pattern before correction will be described as an example.
- the main simulation conditions are an illumination light source ArF excimer laser (193 nm), NA 1.35, modified illumination, a Cquad pupil filter is used, and Cquad 21 has an opening angle of 35 degrees in the fan-shaped light transmission part, an outer diameter of 0.9, and an inner diameter of 0 .7 (the radius of the pupil filter is 1).
- the value of the above halftone mask was used.
- FIG. 5 shows the results obtained by simulation.
- the SRAF CD is changed in the halftone mask having the main pattern CD of 32 nm on the wafer, the SRAF film thickness difference (horizontal axis) and the SRAF It is a figure which shows the relationship with the slice level (vertical axis
- FIG. 5 shows that the SRAF is resolved on the wafer unless the SRAF light intensity / slice level is set to 1 or more.
- the SRAF CD is 14 nm.
- SRAF was used only in the following, but as described above, the SRAF CD is 26 nm to 30 nm, which is about twice as large by applying the correction method of the present invention to thin the SRAF to be transferred.
- the SRAF can be used without being resolved and transferred. According to the correction method of the present invention, the possibility of using a halftone mask having SRAF, which has been difficult to use in miniaturization in the past, is widened.
- FIG. 6 is a diagram showing the relationship between the CD at the end of the main pattern on the wafer and the defocus (Defocus) when the SRAF CD obtained by simulation is changed.
- the film thickness is reduced by correction by etching so that SRAF is not resolved, and the film thickness difference from the film thickness before correction (SRAF film thickness difference: 24 nm, 32 nm, 40 nm) Have.
- SRAF film thickness difference 24 nm, 32 nm, 40 nm
- the CD variation between the SRAF dimensions when the focus is moved is as follows. It shows almost the same tendency. That is, it is shown that SRAF thinning by the correction method of the present invention has no adverse effect on defocusing, and the same dimensional accuracy as in the case of SRAF CD14 nm without correction is obtained.
- the modified photomask of the present invention is a photomask in which the auxiliary pattern is modified by the above-described photomask correcting method.
- the mask is thinned by etching or grinding.
- the auxiliary patterns 13a ′ and 13b ′ after correction are provided, and have a film thickness difference (SRAF film thickness difference: T in the drawing) from the film thickness of the auxiliary pattern before correction.
- the auxiliary pattern is resolved on the transfer target surface by modifying the photomask in which the auxiliary pattern is resolved and transferred onto the transfer target surface in the thickness direction of the film thickness. It is possible to form a transfer image with high contrast while preventing the image from being transferred and maintaining the effect of expanding the depth of focus.
- the present invention will be described by way of examples.
- a MoSi-based halftone mask having an auxiliary pattern and having a transmittance of 6% at 193 nm was prepared.
- the target line size on the wafer was 45 nm, and the pattern was a line / space repeating pattern with a pitch of 90 nm (pitch of 360 nm on the mask), and the pattern shown in FIG. 4 was formed.
- nine lines / spaces with a half pitch of 45 nm are provided as main patterns, and two SRAFs are inserted at both ends of the main pattern (SRAF pitch of 90 nm) in order to improve the resolution of the main pattern at the end.
- Both the main pattern and SRAF were composed of the above 6% halftone, and the film thickness of the pattern on the mask was 68 nm.
- the main pattern CD and SRAF CD on the mask were both 128 nm. *
- ArF excimer laser exposure was performed using the above halftone mask.
- the NA of the exposure system was 1.35, and the Cquad pupil filter shown in FIG. 3 was used as modified illumination.
- SRAF pattern that should not be transferred onto the wafer is resolved on the wafer.
- the transfer characteristics were estimated in advance by simulation. Further, the lithography simulation microscope AIMS45-193i (manufactured by Carl Zeiss) was used under the same exposure conditions as the above exposure system, and the transfer characteristics to the wafer when the SRAF film thickness was reduced were verified. *
- FIG. 29 is a diagram of an aerial image showing the light intensity corresponding to the position of the mask pattern before thinning the SRAF, and shows a SRAF (S1, S2) on one side of a pair of patterns and a part of the main pattern. ing.
- the horizontal axis represents a part of the main pattern and a set of pattern positions of the SRAF
- the vertical axis represents the normalized light intensity when the light intensity of the transmission part having no pattern is 1.
- a plurality of light intensity profiles are displayed when the focus (depth of focus) is changed in order to see the effect of SRAF.
- S1 of the SRAF is resolved on the wafer wherever the slice level is set, and the slice level is set to 0.4. It has been shown that S2 is also resolved by the above. *
- FIG. 30 is a partial enlarged view of FIG. 29, and is a diagram of an aerial image showing the relationship between the main pattern of repeated ends when the focus is changed, the pattern position of the auxiliary pattern S1 before the SRAF thinning process, and the light intensity.
- the light intensity threshold at which the CD of the main pattern of the line / space repeating portion is 45 nm was set to 0.42.
- FIG. 30 shows five light intensity profiles when the focus is changed to see the effect of SRAF, as described in FIG. As shown in FIG. 30, S1 of the SRAF is resolved regardless of the focus. *
- FIG. 31 is a diagram of an aerial image showing the relationship between the main pattern of the repetitive end, the pattern position of the auxiliary pattern S1, and the light intensity when there is no SRAF as a comparative reference of FIG. As shown in FIG. 31, the main pattern at the repeated end is hardly resolved without SRAF. *
- FIG. 32 shows the estimation result of the transfer characteristics by simulation, and is a diagram of an aerial image showing the light intensity corresponding to the position of the mask pattern after the SRAF is thinned by about 30 nm.
- the SRAF portion of the halftone mask having the SRAF pattern that resolves on the wafer was corrected.
- the entire surface of each of the two SRAFs on both sides of one set of main pattern ends was etched to reduce the thickness until the difference in film thickness from the initial film thickness was 30 nm.
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Abstract
Description
本発明のフォトマスクは、ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられるマスクであり、好ましくはウェハ上のハーフピッチが65nm以下、さらには45nm、32nmの微細な半導体素子形成に用いられることを対象とするマスクである。
本発明について述べる前に、まず本発明の対象としている補助パターンを有するハーフトーンマスクの転写特性について説明する。本発明者は、ウェハ上にハーフピッチ45nm以下の細密パターンを形成するための補助パターンを有するハーフトーンマスクの転写特性を、従来のハーフトーンマスクを用いてバイナリマスクと比較しながらシミュレーションにより調べた。
NILS=(dI/dx)/(W×Ith) …(1)
MEEF=ΔウェハCD/ΔマスクCD/4 …(2)
次に、上記の結果を参考にしながら、本発明のフォトマスクおよびフォトマスクの製造方法の実施形態について、図面に基づいて詳細に説明する。本発明においては、後述の主パターン間にSRAFがある場合を除いて、以下のマスクパターンの転写特性の説明では、上記の図3に示すCquad瞳フィルタ31を用い、シミュレーション・ソフトウェアとして、EM-Suite(商品名:Panoramic Technology社製)を用いた。主なシミュレーション条件は、ArFエキシマレーザ(193nm)を照明光源とし、NAは1.35である。評価パターンは、上記の図4(a)に示すパターンを用いている。
図1は、本発明のフォトマスクである補助パターンを有するハーフトーンマスクの第1の実施形態を示す部分断面模式図であり、ライン/スペースパターンを設けた場合を例示しており、合成石英基板などの透明基板11上に、露光光を所定の透過率で透過し位相を変える単層の半透明膜で主パターン12が設けられ、主パターン12の近傍に主パターン12と同一材料よりなる単層の半透明膜で構成された補助パターン(SRAF)13が形成されたハーフトーンマスク10である。図1では、主パターン12、補助パターン13ともに2本、マスクパターンの一部しか例示していないが、もとよりこれに限定されるわけではない。主パターンは孤立パターンまたは周期パターンであってもよい。
上記の透明基板表面の掘り込みを低減するために、本発明のフォトマスクの他の実施形態として、図2に示す2層の半透明膜よりなるハーフトーンマスクを示す。主パターンと補助パターンとは同一材料よりなる2層の半透明膜で構成されており、透明基板側の下層の半透明膜24は、上層の半透明膜25のドライエッチング時のエッチング停止層の機能を有するものであり、かつ半透明膜としての機能も有するものである。上層の半透明膜25としては、上記のモリブデンシリサイド系材料が例示できる。この場合、下層の半透明膜24としては、クロム系材料である酸化クロム膜(CrO)、窒化クロム膜(CrN)、酸化窒化クロム膜(CrON)が好ましい。上記のクロム系材料の薄膜は露光光に対して半透明であり、モリブデンシリサイド系材料のドライエッチングに用いるフッ素系ガスに対して耐性があるからである。クロム系材料は、従来公知の反応性スパッタリング法により形成し、不要部のクロム系材料薄膜は塩素系ガスによりドライエッチングすることができ、透明基板には損傷を与えない。上層の半透明膜25は数10nm、下層の半透明膜24は数nm~数10nmの厚さに成膜される。
次に、図1に示した本発明のハーフトーンマスクの補助パターン(SRAF)の薄膜化の効果について説明する。図5は、ウェハ上での主パターンのCDが32nmのハーフトーンマスクにおいて、SRAFのCDを変えたとき、SRAF膜厚差(横軸)とSRAFの光強度/規格化された光強度閾値のスライスレベル(縦軸)との関係を示す図である。SRAFの光強度/スライスレベルを1以上にしないと、SRAFがウェハ上に解像してしまうことを示す。
次に、本発明のフォトマスクの製造方法について説明する。上記のように、本発明のフォトマスクは、補助パターンを透過する光と透明基板の透明領域を透過する光に70度~115度の範囲の所定の位相差を生じさせることを特徴としており、補助パターンに上記の位相差を生じさせるために、補助パターンの膜厚は主パターンよりも薄く、24nm~40nmの範囲の所定の膜厚差としている。所定の膜厚差とする方法としては、半透明膜の成膜時にパターンに応じて成膜膜厚を変える方法と、半透明膜成膜後にパターンに応じて半透明膜をエッチングして膜厚を変える方法とがある。本発明のフォトマスクの製造方法は、製造が容易で高精度マスクが得られる後者のエッチング方法によるものである。
本発明のフォトマスクの製造方法について説明する前に、公知の一般的な製造方法を用いて本発明のフォトマスクを製造した場合の問題点について述べ、次いで本発明のフォトマスクの製造方法について説明する。
〔第1の実施形態〕
そこで、本発明のフォトマスクの製造方法は、上記の問題点を解決した製造方法であり、ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられ、透明基板上に、投影露光により転写対象面に転写される主パターンと、主パターンの近傍に形成され転写対象面に転写されない補助パターンとを設けたフォトマスクの製造方法である。
例えば、膜厚68nmのモリブデンシリサイドを半透明膜とした場合、主パターン(膜厚68nm)がArFエキシマレーザ光の透過率6%、透明基板の透明領域との位相差180度であり、補助パターンが主パターンと膜厚差24nm~40nmの範囲の所定の膜厚差で、透明基板の透明領域との位相差70度~115度の範囲の所定の位相差である高品質のハーフトーンマスクを容易に製造することができる。
図8は、図1に示す本発明のフォトマスクを製造する方法の第2の実施形態を示す工程断面模式図であり、図7(a)と同様に、透明基板81上に半透明膜82を形成し、半透明膜82を透過する光と透明基板81の透明領域を透過する光の位相差がほぼ180度となる膜厚とし、続いて上記の半透明膜82上に遮光膜83を形成したフォトマスクブランクスを準備する(図8(a))。
図9は、図2に示す本発明のフォトマスクを製造する方法の実施形態を示す工程断面模式図である。図9(a)に示すように、合成石英基板などの透明基板91上に半透明膜92a、半透明膜92を順に成膜し、2層の半透明膜を形成する。下層の半透明膜92aは、上層の半透明膜92をドライエッチングする時のエッチング停止層の機能を有し、かつ半透明膜のマスク材としての機能も有するものである。2層の半透明膜を透過する光と透明基板91の透明領域を透過する光の位相差はほぼ180度となる膜厚とし、続いて上記の2層の半透明膜上に遮光膜93を形成したフォトマスクブランクスを準備する。
図10は、本発明のフォトマスクを製造する方法の第4の実施形態を示す工程断面模式図である。第4の実施形態は、上記の第1の実施形態~第3の実施形態において、必要とする所定の箇所の遮光膜を残す場合のフォトマスクを製造する方法である。
通常、投影露光においては、マスク外周部が多重露光されるのでマスク外周部に遮光領域を設けたフォトマスクが使用される。第4の実施形態は、フォトマスクの外周部に遮光領域を設ける例であり、途中工程までは第1の実施形態~第3の実施形態に示す工程と同じなので、以下、図7を参照しながら、図10により説明する。図10では図7と同じ箇所は同じ符号を用いている。
本発明のフォトマスクの製造方法である第2の実施形態および第3の実施形態においても、同様にしてマスク外周部などの所望する領域に遮光領域を設けることができる。
次に、本発明の製造方法について、ライン/スペースパターンでピッチを変えたときの実施形態について、さらに詳しく説明する。
SRAFをウェハ上に転写させないようにするためには、上記のように、SRAF光強度/スライスレベルが1以上であることが必要である。図12は、図3に示すCquad照明における実施形態において、10%の余裕をみてSRAF光強度/スライスレベル=1.1を満たすSRAFのエッチング量(マスク上)とSRAF CD(ウェハ上の寸法)との関係を示す図である。SRAFのエッチング量は、SRAF部の位相差に対応しており、SRAF部のエッチング量が大きくなるほどウェハ上に転写されたSRAF寸法は大きくなる。SRAFのエッチング量は、エッチング後のSRAF膜厚と主パターンの膜厚(半透明膜の初期膜厚:68nm)との膜厚差を示す。
次に、SRAFのエッチング量に誤差を生じた場合、SRAFに隣接した主パターンCDへ与える影響について、図13により説明する。図13は、図3に示すCquad照明における実施形態において、SRAFエッチング量が28nm、38nm、48nmのときのエッチング量誤差に対するウェハ上の主パターンCD誤差を示し、SRAFエッチング量が大きいほど、ウェハ上の主パターンCD変動が大きいことがわかる。SRAFエッチング量が48nmのときには、僅かなエッチング誤差が繰り返し端の主パターンの寸法に大きく影響することが示されている。したがって、本発明においては、SRAFエッチング量48nm以上(特許文献2の位相差50度以下に相当)は製造工程上好ましくない範囲である。
SRAFエッチング量を変えたとき、繰り返し端主パターンCDとデフォーカスへの影響、および光強度分布について説明する。
図14は、図3に示すCquad照明における実施形態において、SRAFエッチング量を24nm~48nmの範囲で4nmごとに変えたとき、ウェハ上の繰り返し端の主パターンCDとデフォーカス(Defocus)との関係を示す図である。参考として、SRAF自体が無い場合、SRAFエッチングが無い場合も図示してある。SRAFエッチング量24nm~40nmの範囲では、デフォーカスの変化に対して主パターンCDの変動は比較的緩やかでほぼ同じ挙動を示す。しかし、SRAFエッチング量44nm、48nmでは、デフォーカスの変化に対して主パターンCDは大きな変動を示す。
次に、他の実施形態として主パターン間に補助パターン(SRAF)がある場合について、本発明を検証する。
シミュレーション・ソフトウェアとしては、上記と同じくEM-Suite(商品名:Panoramic Technology社製)を用いた。主なシミュレーション条件は、ArFエキシマレーザ(193nm)を照明光源とし、NAは1.35、図16に示すクエーサ(Quasar;登録商標)瞳フィルタ161を用いた。同図(a)はQuasar161の平面模式図、同図(b)はQuasar161を用いてマスク163に露光光を照射したとき(Quasar照明と記す)の斜視模式図、同図(c)はマスクパターン164の平面模式図である。である。Quasarは、扇状光透過部の開口角30度、外径0.85、内径0.65(瞳フィルタの半径を1とする)とした。マスクとしては、モリブデンシリサイド系の露光波長193nmにおける透過率6%の本発明の補助パターンを有するハーフトーンマスク(6%ハーフトーン)を用いた。ウェハ上のターゲットCDは60nm、主パターン165の間にSRAF166が1本ずつあり、パターンピッチは最小ピッチ120nmからのスルーピッチ・ライン/スペースで、SRAF166はピッチ250nmとした。
本発明のフォトマスクは、透明基板の一主面上に、上記投影露光により転写対象面に転写される主パターンと、上記主パターンの近傍に形成され上記転写対象面に転写されない補助パターンとを設けたフォトマスクであって、上記主パターンと上記補助パターンとが同一材料よりなる半透明膜で構成されており、上記補助パターンの膜厚が上記主パターンの膜厚よりも薄く、膜厚差が24nm~40nmの範囲の所定の膜厚差であることを特徴とするものである。
本発明のフォトマスクの修正方法が対象とするフォトマスクは、ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられるマスクであり、好ましくはウェハ上のハーフピッチが65nm以下、さらには45nm、32nmの微細な半導体素子形成に用いられることを対象とする補助パターンを有するマスクである。
本発明の修正方法について述べる前に、まず補助パターンを有するフォトマスクの転写特性について、ハーフトーンマスクを例にして説明する。本発明者は、ウェハ上にハーフピッチ45nm以下の細密パターンを形成するための補助パターンを有するハーフトーンマスクの転写特性を、バイナリマスクと比較しながら、シミュレーションにより調べた。
次に、上記の結果を参考にしながら、本発明のフォトマスクの修正方法の実施形態について、図面に基づいて詳細に説明する。以下のマスクパターンの転写特性の説明では、上記の図3に示すCquad瞳フィルタ31を用い、シミュレーション・ソフトウェアとして、EM-Suite(商品名:Panoramic Technology社製)を用いた。主なシミュレーション条件は、ArFエキシマレーザ(193nm)を照明光源とし、NAは1.35である。評価パターンは、上記の図4(a)に示すパターンを用いている。
本発明のフォトマスクの修正方法は、補助パターンを有するマスクならば、ハーフトーンマスク、バイナリマスクのいずれのマスクにも用いることができ、特に限定されることはないが、図26に、補助パターンを有するハーフトーンマスクおよびバイナリマスクの代表的なマスクを例示しながら説明する。図26において、同じ部位を示す場合には同じ符号を用いている。もとより本発明のフォトマスクの修正方法は、図26に示すフォトマスクに限定されるわけではない。
次に、図25に示した本発明のフォトマスクの修正方法により、補助パターン(SRAF)表面をエッチングもしくは研削し、補助パターンの膜厚を薄く修正した薄膜化の効果について説明する。マスクとしては、一例として、図26(a)に示す部分断面模式図の形状で、膜厚68nmのモリブデンシリサイドを半透明膜とし、主パターン(膜厚68nm)がArFエキシマレーザ光(193nm)の透過率6%、透明基板の透明領域との位相差180度であり、修正前の補助パターンの膜厚も68nmであるハーフトーンマスクを例にして説明する。
<本発明の修正されたフォトマスク>
本発明の修正されたフォトマスクは、上記のフォトマスクの修正方法により補助パターンが修正されたフォトマスクであって、一例として、図25(c)に示すように、エッチングもしくは研削して薄くした修正後の補助パターン13a´および13b'を備え、修正前の補助パターンの膜厚との膜厚差(図中のSRAF膜厚差:T)を有するものである。本発明のフォトマスクは、補助パターンが転写対象面に解像されて転写されてしまうフォトマスクを、補助パターンを膜厚の厚み方向に修正することにより、補助パターンが転写対象面に解像し転写されないようにし、焦点深度拡大効果を保ちつつ、コントラストの高い転写画像を形成することができる。
以下、実施例により本発明を説明する。
11、21 透明基板
12、22 主パターン
13、13a、13a´、13b、13b'、23 補助パターン(SRAF)
14 半透明膜
15 ガスノズル
16 電子ビーム
24 下層の半透明膜(エッチング停止層)
25 上層の半透明膜
31、161 瞳フィルタ
32、162 照明光
33、163 マスク
41 透明基板
42 主パターン
43 補助パターン(SRAF)
164 マスクパターン
165 主パターン
166 SRAF
70、80、90、100 ハーフトーンマスク
71、81、91、101 透明基板
72、82、102 半透明膜
73、83、93、103 遮光膜
74、84 第1のレジストパターン
75、85、95 主パターン部
76、86、96 補助パターン部
77、87 第2のレジストパターン
78、88、98 補助パターン
79、89、99 主パターン
92a 下層の半透明膜(エッチング停止層)
92 上層の半透明膜
94a 第1のレジストパターン
94b 第2のレジストパターン
94c 第3のレジストパターン
104 遮光膜
105 遮光領域用レジストパターン
110 従来製造法のハーフトーンマスク
111 透明基板
112 半透明膜
113 遮光膜
114 第1のレジストパターン
115 主パターン部
116 補助パターン部
117 第2のレジストパターン
118 補助パターン
119 主パターン
121 透明基板表面の段差
1 主パターン
2 半透明補助パターン
301 透明基板
302 半透明膜
304 透明膜
Claims (22)
- ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられるフォトマスクにおいて、該フォトマスクが、透明基板の一主面上に、前記投影露光により転写対象面に転写される主パターンと、前記主パターンの近傍に形成され前記転写対象面に転写されない補助パターンとを設けたフォトマスクであって、
前記主パターンと前記補助パターンとが同一材料よりなる半透明膜で構成されており、
前記主パターンを透過する光と前記透明基板の透明領域を透過する光に180度の位相差を生じさせ、かつ前記補助パターンを透過する光と前記透明基板の透明領域を透過する光に70度~115度の範囲の所定の位相差を生じさせることを特徴とするフォトマスク。 - 前記補助パターンの膜厚が前記主パターンの膜厚よりも薄く、膜厚差が24nm~40nmの範囲の所定の膜厚差であることを特徴とする請求の範囲第1項に記載のフォトマスク。
- 前記膜厚差がドライエッチングにより形成されたことを特徴とする請求の範囲第2項に記載のフォトマスク。
- 前記補助パターンの露光光透過率が15%~29%の範囲の所定の透過率であることを特徴とする請求の範囲第1項から第3項までのいずれかに記載のフォトマスク。
- 前記同一材料よりなる半透明膜が単層の半透明膜または2層の半透明膜よりなることを特徴とする請求の範囲第1項から第4項までのいずれかに記載のフォトマスク。
- 前記単層の半透明膜がモリブデンシリサイド系材料の半透明膜であり、前記2層の半透明膜が前記透明基板上にクロム系材料の半透明膜、モリブデンシリサイド系材料の半透明膜を順に設けたものであることを特徴とする請求の範囲第5項に記載のフォトマスク。
- 請求の範囲第1項から第6項までのいずれかに記載のフォトマスクにおいて、前記フォトマスクの外周部に遮光領域が形成されていることを特徴とするフォトマスク。
- 前記主パターンおよび前記補助パターンがいずれもラインパターンであり、前記主パターンが孤立パターンまたは周期パターンであることを特徴とする請求の範囲第1項から第7項までのいずれかに記載のフォトマスク。
- ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられ、透明基板の一主面上に、前記投影露光により転写対象面に転写される主パターンと、前記主パターンの近傍に形成され前記転写対象面に転写されない補助パターンとを設けたフォトマスクの製造方法であって、
(a)前記透明基板の一主面上に半透明膜、遮光膜を順に形成し、前記半透明膜を透過する光と前記透明基板の透明領域を透過する光の位相差がほぼ180度となる膜厚とする工程と、
(b)前記遮光膜上に第1のレジストパターンを形成し、前記遮光膜および前記半透明膜を順にドライエッチングし、主パターン部と補助パターン部を形成する工程と、
(c)前記第1のレジストパターンを剥離し、次に前記遮光膜上に第2のレジストパターンを形成し、前記補助パターン部の遮光膜をエッチングして除去する工程と、
(d)前記第2のレジストパターンを剥離し、次に前記透明基板の一主面上全面をドライエッチングし、前記補助パターンを透過する光と前記透明基板の透明領域を透過する光が70度~115度の範囲の所定の位相差となる膜厚まで、前記補助パターン部の半透明膜をドライエッチングして補助パターンを形成する工程と、
(e)前記主パターン部の遮光膜をエッチングして除去して主パターンを形成し、前記主パターンを透過する光と前記透明基板の透明領域を透過する光に180度の位相差を生じさせる工程と、
を含むことを特徴とするフォトマスクの製造方法。 - 請求の範囲第9項に記載のフォトマスクの製造方法において、工程(b)の前記半透明膜のドライエッチングが前記半透明膜の膜厚の途中までのハーフエッチングであることを特徴とするフォトマスクの製造方法。
- ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられ、透明基板の一主面上に、前記投影露光により転写対象面に転写される主パターンと、前記主パターンの近傍に形成され前記転写対象面に転写されない補助パターンとを設けたフォトマスクの製造方法であって、
(a)前記透明基板の一主面上に半透明膜、遮光膜を順に形成し、前記半透明膜が2層の半透明膜よりなり、前記透明基板側の下層の半透明膜が上層の半透明膜のエッチング停止層を兼ね、前記2層の半透明膜を透過する光と前記透明基板の透明領域を透過する光の位相差がほぼ180度となる膜厚とする工程と、
(b)前記遮光膜上に第1のレジストパターンを形成し、前記遮光膜および前記2層の半透明膜を順にドライエッチングし、主パターン部と補助パターン部を形成する工程と、
(c)前記第1のレジストパターンを剥離し、次に前記遮光膜上に第2のレジストパターンを形成し、前記補助パターン部の遮光膜をエッチングして除去する工程と、
(d)前記第2のレジストパターンを剥離し、次に前記透明基板の一主面上全面をドライエッチングし、前記補助パターンを透過する光と前記透明基板の透明領域を透過する光が70度~115度の範囲の所定の位相差となる膜厚まで、前記補助パターン部の半透明膜をドライエッチングして補助パターンを形成する工程と、
(e)前記主パターン部の遮光膜をエッチングして除去して主パターンを形成し、前記主パターンを透過する光と前記透明基板の透明領域を透過する光に180度の位相差を生じさせる工程と、を含むことを特徴とするフォトマスクの製造方法。 - 前記補助パターンと前記主パターンとの膜厚差が、24nm~40nmの範囲の所定の膜厚差であることを特徴とする請求の範囲第9項から第11項までのいずれかに記載のフォトマスクの製造方法。
- 請求の範囲第9項から第12項までのいずれかに記載のフォトマスクの製造方法において、前記補助パターンを形成する工程(d)の後に、遮光領域用レジストパターンを形成し、前記主パターン上の遮光膜をドライエッチングして除去し主パターンを形成するとともに、前記フォトマスクの外周部に遮光領域を形成する工程、をさらに含むことを特徴とするフォトマスクの製造方法。
- 透明基板の一主面上に、前記投影露光により転写対象面に転写される主パターンと、前記主パターンの近傍に形成され前記転写対象面に転写されない補助パターンとを設けたフォトマスクであって、
前記主パターンと前記補助パターンとが同一材料よりなる半透明膜で構成されており、
前記補助パターンの膜厚が前記主パターンの膜厚よりも薄く、膜厚差が24nm~40nmの範囲の所定の膜厚差であることを特徴とするフォトマスク。 - ArFエキシマレーザを露光光源とし、変形照明による投影露光に用いられ、透明基板の一主面上に、前記投影露光により転写対象面に転写される主パターンと、前記主パターンの近傍に形成された補助パターンとを有するフォトマスクにおいて、前記投影露光により前記補助パターンが前記転写対象面に解像されてしまう場合のフォトマスクの修正方法であって、
前記解像されてしまう補助パターンの表面をエッチングもしくは研削し、前記補助パターンが前記転写対象面に解像されなくなるまで、前記解像されてしまう補助パターンの膜厚を薄くすることを特徴とするフォトマスクの修正方法。 - 前記エッチングもしくは研削して薄くした修正後の前記補助パターンの膜厚と、修正前の前記補助パターンの膜厚との膜厚差が、1nm~40nmの範囲であることを特徴とする請求の範囲第15項に記載のフォトマスクの修正方法。
- 前記エッチングが電子ビームマスク修正機の電子ビームを用いたガスアシスト・エッチングであり、前記研削が原子間力顕微鏡の探針を用いた研削であることを特徴とする請求の範囲第15項または第16項に記載のフォトマスクの修正方法。
- 前記主パターンと前記補助パターンとが半透明膜で構成されており、前記主パターンの膜厚が、前記主パターンを透過する光と前記透明基板の透明領域を透過する光とで180度の位相差を生じる膜厚であることを特徴とする請求の範囲第15項から第17項までのいずれかに記載のフォトマスクの修正方法。
- 前記主パターンが遮光膜から構成され、前記補助パターンが半透明膜よりなることを特徴とする請求の範囲第15項から第17項までのいずれかに記載のフォトマスクの修正方法。
- 前記主パターンと前記補助パターンとが遮光膜で構成されていることを特徴とする請求の範囲第15項から第17項までのいずれかに記載のフォトマスクの修正方法。
- 前記主パターンおよび前記補助パターンがいずれもラインパターンであり、前記主パターンが孤立パターンまたは周期パターンであることを特徴とする請求の範囲第15項から第20項までのいずれかに記載のフォトマスクの修正方法。
- 請求の範囲第15項から第21項までのいずれかに記載のフォトマスクの修正方法により補助パターンが修正され、修正後の前記補助パターンの膜厚が修正前の前記補助パターンの膜厚よりも薄いことを特徴とするフォトマスク。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103339711A (zh) * | 2011-01-07 | 2013-10-02 | 美光科技公司 | 成像装置、其形成方法以及形成半导体装置结构的方法 |
JP2017058407A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社東芝 | パターンデータ作成方法、パターンデータ作成装置及びマスク |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101420907B1 (ko) * | 2009-02-16 | 2014-07-17 | 다이니폰 인사츠 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법 및 수정 방법 |
US8846273B2 (en) * | 2012-06-04 | 2014-09-30 | Micron Technology, Inc. | Photomasks, methods of forming a photomask, and methods of photolithographically patterning a substrate |
JP6063650B2 (ja) * | 2012-06-18 | 2017-01-18 | Hoya株式会社 | フォトマスクの製造方法 |
JP2015194673A (ja) * | 2013-08-21 | 2015-11-05 | 大日本印刷株式会社 | マスクブランクス、ネガ型レジスト膜付きマスクブランクス、位相シフトマスク、およびそれを用いるパターン形成体の製造方法 |
KR102195580B1 (ko) | 2014-01-14 | 2020-12-29 | 삼성디스플레이 주식회사 | 위상 반전 마스크, 이를 이용한 패턴 형성 방법 및 이를 이용한 표시 패널의 제조 방법 |
CN103994740B (zh) * | 2014-04-22 | 2016-08-24 | 京东方科技集团股份有限公司 | 膜厚测量装置和膜厚测量方法 |
KR102305092B1 (ko) | 2014-07-16 | 2021-09-24 | 삼성전자주식회사 | 포토리소그래피용 마스크와 그 제조 방법 |
CN104267580A (zh) * | 2014-09-05 | 2015-01-07 | 京东方科技集团股份有限公司 | 掩模板、阵列基板及其制备方法、显示装置 |
CN106200255B (zh) * | 2015-05-05 | 2020-05-26 | 华邦电子股份有限公司 | 相位移光罩及其制造方法 |
KR102374204B1 (ko) | 2016-03-25 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
TWI659262B (zh) * | 2017-08-07 | 2019-05-11 | 日商Hoya股份有限公司 | 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法 |
CN107643651B (zh) * | 2017-10-09 | 2021-04-16 | 上海华力微电子有限公司 | 一种光刻辅助图形的设计方法 |
CN111771161B (zh) | 2018-05-30 | 2023-07-18 | 株式会社Lg化学 | 用于压印的光掩膜及其制造方法 |
US11036129B2 (en) * | 2018-07-31 | 2021-06-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Photomask and method for forming the same |
EP3850432A4 (en) * | 2018-09-14 | 2022-06-08 | Synopsys, Inc. | HANDLING OF REFLECTIVE EUV MASK ABSORBER TO ENHANCE EDGE CONTRAST |
CN110707044B (zh) * | 2018-09-27 | 2022-03-29 | 联华电子股份有限公司 | 形成半导体装置布局的方法 |
Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0389346A (ja) * | 1989-09-01 | 1991-04-15 | Hitachi Ltd | レジストパターンの形成方法 |
JPH07140639A (ja) | 1993-01-12 | 1995-06-02 | Nippon Telegr & Teleph Corp <Ntt> | マスク |
JPH0973166A (ja) * | 1995-06-29 | 1997-03-18 | Nec Corp | 露光用フォトマスクおよびその製造方法 |
JPH11202475A (ja) * | 1998-01-16 | 1999-07-30 | Nec Corp | マスク修正方法 |
JP2953406B2 (ja) | 1996-10-17 | 1999-09-27 | 日本電気株式会社 | フォトマスクおよびその製造方法 |
JP2003195481A (ja) * | 2001-12-27 | 2003-07-09 | Toshiba Corp | フォトマスクの修正方法及び修正装置 |
JP2003302739A (ja) * | 2002-04-12 | 2003-10-24 | Elpida Memory Inc | フォトマスク |
JP2005044843A (ja) * | 2003-07-23 | 2005-02-17 | Sii Nanotechnology Inc | ナノインプリントリソグラフィ用の原版の欠陥修正方法 |
JP2005157022A (ja) * | 2003-11-27 | 2005-06-16 | Elpida Memory Inc | 補助パターン付きマスクの製造方法 |
JP2007018005A (ja) * | 2003-02-17 | 2007-01-25 | Matsushita Electric Ind Co Ltd | フォトマスク |
JP2007305972A (ja) * | 2006-04-11 | 2007-11-22 | Toshiba Corp | 露光条件設定方法及び半導体デバイスの製造方法 |
JP2008122722A (ja) * | 2006-11-14 | 2008-05-29 | Dainippon Printing Co Ltd | フォトマスク |
JP2008158499A (ja) * | 2006-11-29 | 2008-07-10 | Sii Nanotechnology Inc | フォトマスクの欠陥修正方法 |
JP2008304737A (ja) * | 2007-06-08 | 2008-12-18 | Sii Nanotechnology Inc | フォトマスクの欠陥修正方法及び異物除去方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08234410A (ja) * | 1995-02-28 | 1996-09-13 | Dainippon Printing Co Ltd | 位相シフトフォトマスク及び位相シフトフォトマスクドライエッチング方法 |
US5786113A (en) | 1995-06-29 | 1998-07-28 | Nec Corporation | Photo-mask used in aligner for exactly transferring main pattern assisted by semi-transparent auxiliary pattern and process of fabrication thereof |
JP2923905B2 (ja) * | 1996-04-19 | 1999-07-26 | 日本電気株式会社 | フォトマスク |
US5780208A (en) * | 1996-10-17 | 1998-07-14 | Vlsi Technology, Inc. | Method and mask design to minimize reflective notching effects |
US6150058A (en) * | 1998-06-12 | 2000-11-21 | Taiwan Semiconductor Manufacturing Company | Method of making attenuating phase-shifting mask using different exposure doses |
US6103430A (en) * | 1998-12-30 | 2000-08-15 | Micron Technology, Inc. | Method for repairing bump and divot defects in a phase shifting mask |
JP4163331B2 (ja) * | 1999-07-14 | 2008-10-08 | アルバック成膜株式会社 | 位相シフタ膜の製造方法、位相シフトマスク用ブランクスの製造方法、および、位相シフトマスクの製造方法 |
DE10021096A1 (de) * | 2000-04-20 | 2001-10-31 | Infineon Technologies Ag | Maske für optische Projektionssysteme und ein Verfahren zu ihrer Herstellung |
KR100618811B1 (ko) * | 2001-03-20 | 2006-08-31 | 삼성전자주식회사 | 반도체 소자 제조를 위한 위상 반전 마스크 및 그 제조방법 |
KR100434494B1 (ko) * | 2001-10-23 | 2004-06-05 | 삼성전자주식회사 | 위상 반전 마스크의 패턴 교정방법 및 이를 이용하여교정된 위상 반전 마스크 |
JP2003287875A (ja) * | 2002-01-24 | 2003-10-10 | Hitachi Ltd | マスクの製造方法および半導体集積回路装置の製造方法 |
DE10244399B4 (de) * | 2002-09-24 | 2006-08-03 | Infineon Technologies Ag | Defekt-Reparatur-Verfahren zur Reparatur von Masken-Defekten |
KR100523646B1 (ko) * | 2003-02-04 | 2005-10-24 | 동부아남반도체 주식회사 | 보조 패턴을 갖는 위상 반전 마스크 및 그 제조 방법 |
US7147975B2 (en) * | 2003-02-17 | 2006-12-12 | Matsushita Electric Industrial Co., Ltd. | Photomask |
US7014962B2 (en) * | 2003-09-13 | 2006-03-21 | Chartered Semiconductor Manufacturing, Ltd | Half tone alternating phase shift masks |
US7312004B2 (en) * | 2004-03-18 | 2007-12-25 | Photronics, Inc. | Embedded attenuated phase shift mask with tunable transmission |
US20060147814A1 (en) * | 2005-01-03 | 2006-07-06 | Ted Liang | Methods for repairing an alternating phase-shift mask |
TW200717176A (en) * | 2005-09-21 | 2007-05-01 | Dainippon Printing Co Ltd | Photo mask having gradation sequence and method for manufacturing the same |
US7579121B2 (en) | 2005-10-07 | 2009-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical proximity correction photomasks |
JP2007279440A (ja) * | 2006-04-07 | 2007-10-25 | Toshiba Corp | ハーフトーン型位相シフトマスク及びその製造方法 |
DE102007055540A1 (de) * | 2006-11-29 | 2008-06-19 | Sii Nano Technology Inc. | Verfahren zum Korrigieren von Photomaskendefekten |
JP4914272B2 (ja) * | 2007-04-02 | 2012-04-11 | エルピーダメモリ株式会社 | 投影露光用のレチクル、該投影露光用のレチクルの製造方法及び該レチクルを用いた半導体装置 |
KR20080099924A (ko) * | 2007-05-11 | 2008-11-14 | 주식회사 하이닉스반도체 | 어시스트 패턴을 갖는 포토마스크 및 그 형성방법 |
US8003283B2 (en) * | 2008-06-18 | 2011-08-23 | Rave Llc | System and a method for improved crosshatch nanomachining of small high aspect three dimensional structures by creating alternating superficial surface channels |
KR101420907B1 (ko) * | 2009-02-16 | 2014-07-17 | 다이니폰 인사츠 가부시키가이샤 | 포토마스크, 포토마스크의 제조 방법 및 수정 방법 |
-
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Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0389346A (ja) * | 1989-09-01 | 1991-04-15 | Hitachi Ltd | レジストパターンの形成方法 |
JPH07140639A (ja) | 1993-01-12 | 1995-06-02 | Nippon Telegr & Teleph Corp <Ntt> | マスク |
JPH0973166A (ja) * | 1995-06-29 | 1997-03-18 | Nec Corp | 露光用フォトマスクおよびその製造方法 |
JP2953406B2 (ja) | 1996-10-17 | 1999-09-27 | 日本電気株式会社 | フォトマスクおよびその製造方法 |
JPH11202475A (ja) * | 1998-01-16 | 1999-07-30 | Nec Corp | マスク修正方法 |
JP2003195481A (ja) * | 2001-12-27 | 2003-07-09 | Toshiba Corp | フォトマスクの修正方法及び修正装置 |
JP2003302739A (ja) * | 2002-04-12 | 2003-10-24 | Elpida Memory Inc | フォトマスク |
JP2007018005A (ja) * | 2003-02-17 | 2007-01-25 | Matsushita Electric Ind Co Ltd | フォトマスク |
JP2005044843A (ja) * | 2003-07-23 | 2005-02-17 | Sii Nanotechnology Inc | ナノインプリントリソグラフィ用の原版の欠陥修正方法 |
JP2005157022A (ja) * | 2003-11-27 | 2005-06-16 | Elpida Memory Inc | 補助パターン付きマスクの製造方法 |
JP2007305972A (ja) * | 2006-04-11 | 2007-11-22 | Toshiba Corp | 露光条件設定方法及び半導体デバイスの製造方法 |
JP2008122722A (ja) * | 2006-11-14 | 2008-05-29 | Dainippon Printing Co Ltd | フォトマスク |
JP2008158499A (ja) * | 2006-11-29 | 2008-07-10 | Sii Nanotechnology Inc | フォトマスクの欠陥修正方法 |
JP2008304737A (ja) * | 2007-06-08 | 2008-12-18 | Sii Nanotechnology Inc | フォトマスクの欠陥修正方法及び異物除去方法 |
Non-Patent Citations (3)
Title |
---|
N. V. LAFFERTY ET AL., PROC. OF SPIE, vol. 5377, 2004, pages 381 - 392 |
NEAL V. LAFFERTY ET AL.: "Gray Assist Bar OPC, Optical Microlithography XVII", PROC. OF SPIE, vol. 5377, 2004, pages 381 - 392, XP008164597 * |
See also references of EP2397900A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103339711A (zh) * | 2011-01-07 | 2013-10-02 | 美光科技公司 | 成像装置、其形成方法以及形成半导体装置结构的方法 |
US9140977B2 (en) | 2011-01-07 | 2015-09-22 | Micron Technology, Inc. | Imaging devices, methods of forming same, and methods of forming semiconductor device structures |
JP2017058407A (ja) * | 2015-09-14 | 2017-03-23 | 株式会社東芝 | パターンデータ作成方法、パターンデータ作成装置及びマスク |
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TWI422965B (zh) | 2014-01-11 |
KR101396078B1 (ko) | 2014-05-15 |
KR101420907B1 (ko) | 2014-07-17 |
TW201040661A (en) | 2010-11-16 |
EP2738791A3 (en) | 2014-06-18 |
US20180321582A1 (en) | 2018-11-08 |
EP2738791A2 (en) | 2014-06-04 |
US20110294045A1 (en) | 2011-12-01 |
US9519211B2 (en) | 2016-12-13 |
KR20110126617A (ko) | 2011-11-23 |
US10048580B2 (en) | 2018-08-14 |
US20150140480A1 (en) | 2015-05-21 |
US10634990B2 (en) | 2020-04-28 |
US20190332006A1 (en) | 2019-10-31 |
US8974987B2 (en) | 2015-03-10 |
EP2397900A4 (en) | 2013-09-04 |
US10394118B2 (en) | 2019-08-27 |
CN102308256A (zh) | 2012-01-04 |
US20170075213A1 (en) | 2017-03-16 |
EP2397900B1 (en) | 2014-10-08 |
CN102308256B (zh) | 2013-09-25 |
EP2738791B1 (en) | 2015-08-19 |
KR20130058081A (ko) | 2013-06-03 |
EP2397900A1 (en) | 2011-12-21 |
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