WO2010077070A3 - 유기 발광 소자 및 그 제조 방법 - Google Patents

유기 발광 소자 및 그 제조 방법 Download PDF

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Publication number
WO2010077070A3
WO2010077070A3 PCT/KR2009/007900 KR2009007900W WO2010077070A3 WO 2010077070 A3 WO2010077070 A3 WO 2010077070A3 KR 2009007900 W KR2009007900 W KR 2009007900W WO 2010077070 A3 WO2010077070 A3 WO 2010077070A3
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WIPO (PCT)
Prior art keywords
electroluminescence device
organic electroluminescence
electrode
substrate
total reflection
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PCT/KR2009/007900
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English (en)
French (fr)
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WO2010077070A2 (ko
Inventor
김장주
김형준
조환희
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서울대학교산학협력단
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Priority to US13/142,936 priority Critical patent/US8692237B2/en
Publication of WO2010077070A2 publication Critical patent/WO2010077070A2/ko
Publication of WO2010077070A3 publication Critical patent/WO2010077070A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0492—Processes for depositing or forming copper oxide superconductor layers by thermal spraying, e.g. plasma deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/8085—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/80855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/80862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/808—Bonding techniques
    • H01L2224/8085—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/80855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/80874—Ultraviolet [UV] curing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

본 발명은 전극 표면에서 전반사 및 광도파로 효과로 인해 손실되는 광의 추출 효율을 향상시킬 수 있는 유기 발광 소자를 실현한다는 것으로, 이를 위하여 본 발명은, 기판 상에 제 1 전극, 유기물층 및 제 2 전극이 순차 적층되는 구조를 갖는 종래의 유기 발광 소자와는 달리, 기판과 제 1 전극 사이에 요철 형상의 미세 패턴을 갖는 나노 구조체를 형성하여, 전반사와 광 도파로 모드로 인해 손실되는 광을 기판 외부로 추출함으로써 외부 양자 효율이 향상된 유기 발광 소자를 실현할 수 있으며, 또한 시야각에 따른 광 추출 패턴과 색 변화를 개선할 수 있는 것이다.
PCT/KR2009/007900 2008-12-30 2009-12-29 유기 발광 소자 및 그 제조 방법 WO2010077070A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/142,936 US8692237B2 (en) 2008-12-30 2009-12-29 Organic light emitting device and method of manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0136593 2008-12-30
KR1020080136593A KR101029299B1 (ko) 2008-12-30 2008-12-30 유기 발광 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
WO2010077070A2 WO2010077070A2 (ko) 2010-07-08
WO2010077070A3 true WO2010077070A3 (ko) 2010-10-07

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US (1) US8692237B2 (ko)
KR (1) KR101029299B1 (ko)
WO (1) WO2010077070A2 (ko)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8466478B2 (en) * 2010-09-07 2013-06-18 Chi Mei Lighting Technology Corporation Light emitting device utilizing rod structure
CN102751443B (zh) * 2011-04-19 2016-02-10 海洋王照明科技股份有限公司 有机电致发光装置及其制作方法
US20120305966A1 (en) 2011-05-31 2012-12-06 Electronics And Telecommunications Research Institute Organic light emitting diode and method of fabricating the same
CN103299396B (zh) * 2011-06-23 2015-11-25 旭化成电子材料株式会社 微细图案形成用积层体及微细图案形成用积层体的制造方法
US8659221B2 (en) * 2011-08-26 2014-02-25 3M Innovative Properties Company OLED light extraction film with multi-periodic zones of nanostructures
US20130064352A1 (en) * 2011-09-09 2013-03-14 Canon Kabushiki Kaisha X-ray waveguide, process of producing x-ray waveguide, and x-ray guiding system
KR101353434B1 (ko) * 2011-10-17 2014-01-21 주식회사 엘지화학 유기전자소자용 기판
US8952364B2 (en) * 2011-11-10 2015-02-10 Nitto Denko Corporation Light-emitting devices comprising nanostructures
KR101250879B1 (ko) * 2011-11-14 2013-04-04 엘지디스플레이 주식회사 구멍이 형성된 무기물 층을 포함하는 유기 발광 다이오드 소자
KR20130100629A (ko) 2012-03-02 2013-09-11 삼성디스플레이 주식회사 유기 발광 디스플레이 장치
KR20130108027A (ko) * 2012-03-23 2013-10-02 주식회사 엘지화학 유기전자소자용 기판의 제조방법
CN102766020B (zh) * 2012-06-29 2014-11-05 北京化工大学 Abe 发酵液渗透汽化耦合精馏生产乙醇、丙酮和丁醇的方法
KR101942092B1 (ko) * 2012-07-30 2019-01-25 한국전자통신연구원 유기발광소자 제조방법
EP2871688B1 (en) * 2012-07-31 2022-09-21 LG Chem, Ltd. Substrate for organic electronic device
US9871228B2 (en) * 2012-11-30 2018-01-16 Lg Display Co., Ltd. Organic light emitting device comprising flexible substrate and method for preparing thereof
KR20140119266A (ko) 2013-03-28 2014-10-10 삼성디스플레이 주식회사 유기발광 표시장치 및 그 제조방법
KR101466833B1 (ko) * 2013-07-08 2014-11-28 코닝정밀소재 주식회사 유기발광소자용 광추출 기판, 그 제조방법 및 이를 포함하는 유기발광소자
KR102107108B1 (ko) 2013-09-13 2020-05-07 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102205526B1 (ko) 2013-11-04 2021-01-20 삼성디스플레이 주식회사 유기 발광 표시 장치
CN105940519A (zh) * 2013-11-27 2016-09-14 娜我比可隆股份有限公司 用于制造基板的方法、基板、用于制造有机电致发光器件的方法和有机电致发光器件
KR101608335B1 (ko) * 2013-12-02 2016-04-01 코닝정밀소재 주식회사 유기발광소자
KR102132883B1 (ko) 2013-12-10 2020-07-13 삼성디스플레이 주식회사 광추출 효율이 향상된 유기 발광 표시 장치 및 이의 제조 방법
KR20150069776A (ko) * 2013-12-16 2015-06-24 일진엘이디(주) 다층의 나노입자층을 가진 발광 다이오드
KR102094711B1 (ko) * 2013-12-30 2020-03-30 엘지디스플레이 주식회사 유기 발광 표시장치 및 그 제조방법
CN103928625B (zh) * 2014-04-08 2016-05-18 陕西科技大学 一种柔性透明oled的器件结构及制备方法
CN104362260A (zh) * 2014-11-18 2015-02-18 上海交通大学 一种利用微结构提高光萃取效率的oled器件
US9843024B2 (en) * 2014-12-03 2017-12-12 Universal Display Corporation Methods for fabricating OLEDs
KR20160111592A (ko) 2015-03-16 2016-09-27 이미지랩(주) 유기발광소자용 광추출 필름 및 이를 구비하는 유기발광소자
JP6565338B2 (ja) * 2015-05-28 2019-08-28 凸版印刷株式会社 有機ｅｌ素子
US20160377067A1 (en) 2015-06-29 2016-12-29 Pentair Filtration Solutions, Llc Fluid Dispensing Apparatus and Method
KR102587954B1 (ko) * 2015-10-26 2023-10-11 삼성전자주식회사 나노 패턴 기판을 포함하는 전도체 및 그 제조방법
KR102446536B1 (ko) 2015-11-02 2022-09-26 한양대학교 산학협력단 유기 발광 소자 및 그 제조 방법
US10756306B2 (en) 2016-10-28 2020-08-25 3M Innovative Properties Company Nanostructured article
EP3503224B1 (en) 2017-12-22 2021-01-20 Samsung Electronics Co., Ltd. Light emitting device and display apparatus including the same
JP7188690B2 (ja) * 2018-08-22 2022-12-13 セイコーエプソン株式会社 プロジェクター
DE102019101346A1 (de) * 2019-01-18 2020-07-23 Osram Opto Semiconductors Gmbh Nanostempelverfahren und nanooptisches bauteil
KR20220010363A (ko) * 2020-07-17 2022-01-25 삼성전자주식회사 발광 소자 및 이를 포함하는 디스플레이 장치
WO2023037631A1 (ja) * 2021-09-09 2023-03-16 ソニーセミコンダクタソリューションズ株式会社 発光素子アレイ、発光装置、電子機器、及びフォトニック結晶構造体

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050038120A (ko) * 2003-10-21 2005-04-27 삼성전자주식회사 감광성 반도체 나노결정, 반도체 나노결정 패턴형성용감광성 조성물 및 이들을 이용한 패턴 형성 방법
KR20060030396A (ko) * 2004-10-05 2006-04-10 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 이의 제조 방법
KR20060090765A (ko) * 2005-02-10 2006-08-16 가부시끼가이샤 도시바 유기 ｅｌ 디스플레이
KR20060103111A (ko) * 2005-03-25 2006-09-28 세이코 엡슨 가부시키가이샤 발광 장치
KR20070074257A (ko) * 2006-01-09 2007-07-12 삼성전자주식회사 무기물 발광 다이오드 및 그의 제조방법
KR20070102947A (ko) * 2006-04-17 2007-10-22 가부시끼가이샤 아이테스 투명 기판과 전극 사이에 미세 구조체를 갖는 유기 ｅｌ소자

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100940530B1 (ko) * 2003-01-17 2010-02-10 삼성전자주식회사 실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
JP4511440B2 (ja) 2004-10-05 2010-07-28 三星モバイルディスプレイ株式會社 有機発光素子及び有機発光素子の製造方法
KR100682872B1 (ko) * 2004-12-08 2007-02-15 삼성전기주식회사 고효율 반도체 발광 소자 및 그 제조방법
US7791271B2 (en) * 2006-02-24 2010-09-07 Global Oled Technology Llc Top-emitting OLED device with light-scattering layer and color-conversion
US7851995B2 (en) * 2006-05-05 2010-12-14 Global Oled Technology Llc Electroluminescent device having improved light output
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
WO2009017035A1 (ja) * 2007-07-27 2009-02-05 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機ｌｅｄ素子及びその製造方法
US20100245218A1 (en) * 2007-11-01 2010-09-30 Shogo Nasu Light-emitting device and display device
US7957621B2 (en) * 2008-12-17 2011-06-07 3M Innovative Properties Company Light extraction film with nanoparticle coatings

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050038120A (ko) * 2003-10-21 2005-04-27 삼성전자주식회사 감광성 반도체 나노결정, 반도체 나노결정 패턴형성용감광성 조성물 및 이들을 이용한 패턴 형성 방법
KR20060030396A (ko) * 2004-10-05 2006-04-10 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 이의 제조 방법
KR20060090765A (ko) * 2005-02-10 2006-08-16 가부시끼가이샤 도시바 유기 ｅｌ 디스플레이
KR20060103111A (ko) * 2005-03-25 2006-09-28 세이코 엡슨 가부시키가이샤 발광 장치
KR20070074257A (ko) * 2006-01-09 2007-07-12 삼성전자주식회사 무기물 발광 다이오드 및 그의 제조방법
KR20070102947A (ko) * 2006-04-17 2007-10-22 가부시끼가이샤 아이테스 투명 기판과 전극 사이에 미세 구조체를 갖는 유기 ｅｌ소자

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US8692237B2 (en) 2014-04-08
KR101029299B1 (ko) 2011-04-18
KR20100078354A (ko) 2010-07-08
WO2010077070A2 (ko) 2010-07-08
US20110266577A1 (en) 2011-11-03

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