WO2010067520A1 - 磁気抵抗効果素子、それを用いた磁気メモリセル及び磁気ランダムアクセスメモリ - Google Patents
磁気抵抗効果素子、それを用いた磁気メモリセル及び磁気ランダムアクセスメモリ Download PDFInfo
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- WO2010067520A1 WO2010067520A1 PCT/JP2009/006122 JP2009006122W WO2010067520A1 WO 2010067520 A1 WO2010067520 A1 WO 2010067520A1 JP 2009006122 W JP2009006122 W JP 2009006122W WO 2010067520 A1 WO2010067520 A1 WO 2010067520A1
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
Definitions
- the present invention relates to a tunnel magnetoresistive element and a low power consumption nonvolatile magnetic memory equipped with the same.
- a TMR element using an Al oxide as an insulating layer as a tunnel magneto-resistance effect (hereinafter referred to as TMR) element to be applied to a future highly integrated magnetic memory, and an insulating layer
- TMR tunnel magneto-resistance effect
- Patent Document 2 Non-Patent Document 2 that can obtain a magnetoresistance ratio several times larger than that using magnesium oxide (MgO).
- Patent Document 1 discloses a TMR element using CoFe as a magnetic layer, a low power consumption magnetic memory cell using the same, and a magnetic random access memory.
- Patent Document 2 discloses a TMR element using a magnetic pinned layer of a body-centered cubic lattice and a (100) -oriented MgO barrier layer, a magnetic memory cell and a magnetic random access memory using CoFeB as a representative example.
- a conventional nonvolatile magnetic memory is constituted by a memory cell in which a TMR element is formed on a MOSFET. Switching uses a MOSFET, writes information by rotating the magnetization direction of the TMR element using a current-induced spatial magnetic field generated by energizing the bit line and the word line, and reads information by the output voltage of the TMR element It is.
- Patent Document 6 discloses a TMR element to which a free layer in which a plurality of ferromagnetic layers are stacked via a nonmagnetic layer is used for the purpose of stably performing a spin transfer torque magnetization reversal operation against an intruding magnetic field from the outside.
- Patent Document 5 discloses an example in which an insulating film is applied to the side wall of the TMR element for the purpose of improving the reliability of the magnetic memory.
- CoFeB is used for the magnetic layer of the TMR element and MgO is used for the insulating layer
- amorphous CoFeB is crystallized during film formation by heat treatment at 320 ° C. or more. Therefore, it is necessary to provide a layer that can suppress element diffusion due to heat treatment and promote the uniformity of crystallization of CoFeB.
- An object of the present invention is to provide a magnetoresistive element that satisfies high thermal stability and a low power writing method and can withstand heat treatment of a predetermined value or more.
- a magnetoresistive element of the present invention includes an amorphous nonmagnetic metal layer, an orientation control layer formed on the nonmagnetic metal layer, and an orientation control layer formed on the orientation control layer.
- a TMR element comprising an insulating layer formed between a ferromagnetic free layer, a ferromagnetic fixed layer, a ferromagnetic free layer, and a ferromagnetic fixed layer, a sidewall of the TMR element, a sidewall of an orientation control layer, and a nonmagnetic metal layer
- the MgO passivation layer is (001) oriented to improve the CoFeB crystal uniformity of the TMR element that is crystallized at 320 degrees or more and obtain the best effect of TMR. be able to.
- the TMR element of the present invention can be applied to magnetic memory cells and magnetic random access memories.
- the ferromagnetic layer of the magnetoresistive effect element can be uniformly crystallized and the best TMR effect can be obtained without degrading the voltage resistance of the interlayer insulating layer even when heat treatment at 350 ° C. or higher is performed. Can do.
- the TMR element By installing the TMR element in a magnetic memory, it is possible to provide a magnetic memory cell and a magnetic random access memory that guarantee endurance of rewriting and non-volatility.
- the magnetization reversal (switching) of the ferromagnetic free layer is not caused by a spatial external magnetic field, but the spin of a spin-polarized current that flows mainly in the TMR element is torqued to the magnetic moment of the ferromagnetic free layer.
- This spin-polarized current is generated by passing a current through the TMR element itself. Therefore, spin transfer torque magnetization reversal is realized by flowing a current from the outside to the TMR element.
- the read current that flows to read the magnetization direction of the ferromagnetic free layer of the TMR element is set smaller than the write current that causes magnetization reversal.
- the threshold value of the current density at which the spin transfer torque magnetization reversal occurs is defined as Jc.
- FIG. 1 is a schematic cross-sectional view showing the configuration of the TMR element 50 according to the first embodiment.
- the TMR film 1 includes a ferromagnetic fixed layer 300, an insulating layer 301, and a ferromagnetic free layer 302. Further, the stacking order of the ferromagnetic pinned layer 300 and the ferromagnetic free layer 302 may be reversed.
- CoFeB is desirably used for the ferromagnetic fixed layer 300 and the ferromagnetic free layer 302.
- materials and compositions such as CoFe and CoFeNi in the table shown in FIG.
- the additive elements include Ta, Ru, Cu, Au, Ti, Cr, Ag, Al, Os, Re, C, O, N, Pd, Pt, Zr, Zn, Ir, W, Mo, Nb, and the like. May be used alone or in combination.
- the insulating layer 301 preferably uses (001) -oriented MgO (magnesium oxide) having a rock salt structure, but aluminum oxide (Al—O), aluminum nitride (Al—N), and magnesium nitride (Mg—N).
- MgO magnesium nitride
- Silicon oxide (Si—O), silicon nitride (Si—N), titanium oxide (Ti—O), Ca, Ba, Sr, V, Ni, Fe, Co, Cu, Ru, Re, Os , Eu, Bi, Pb, Zn may be added to MgO, Al—O, Al—N, Mg—N, Si—O, Si—N, or Ti—O, or oxides thereof.
- an orientation control layer 401 is further provided below the tunnel magnetoresistive effect film 1, and the ferromagnetic free layer 302 or ferromagnetic layer.
- a protective layer is formed on the fixed layer 300.
- a material such as Ru or Ta was used. By using such a material, when CoFeB is used for the ferromagnetic layer, a smooth CoFeB surface can be formed at a uniform atomic level, and the (001) orientation of MgO thereon can be improved. .
- an amorphous conductive material can be used as the orientation control layer.
- a metal layer 400 is formed under the orientation control layer.
- the most desirable material for the metal layer 400 is Ta, but a metal layer having an amorphous structure such as TiN, CuN, or TaN is preferable.
- the MgO passivation layer 200 is easily (001) oriented in the direction perpendicular to the film surface.
- the MgO passivation layer 200 is formed so as to cover the sidewalls of the TMR film 1, the orientation control layer 4001, the protective film 402 and the sidewalls of the metal layer 400, and the interlayer insulating layer 201 covers the MgO passivation layer 200. Is formed. Electrodes 500 and 501 are provided in contact with the top and bottom of the TMR film 1 to constitute a TMR element.
- a spin transfer torque generated from a spin current generated by applying a voltage or current between the electrode 500 and the electrode 501 and causing the current to flow in the direction perpendicular to the film surface of the TMR film 1 is applied to the ferromagnetic free layer 302.
- the magnetization direction of the ferromagnetic free layer 302 is reversed, and magnetic information is recorded with the magnetization direction of the ferromagnetic free layer 302 set to “0” parallel to the ferromagnetic fixed layer 300 and “1” antiparallel. To do.
- the tunnel magnetoresistance ratio (TMR ratio) used for reading the magnetization direction information of the ferromagnetic free layer 302 of the TMR film 1 will be described.
- the relative direction of the magnetization direction of the ferromagnetic free layer 302 and the ferromagnetic fixed layer 300 is determined by applying a voltage or current between the electrode 500 and the electrode 501 and reading the current or voltage generated from the TMR film 1. Whether the magnetization direction of the layer 302 is parallel or antiparallel to the magnetization direction of the ferromagnetic pinned layer 300 is identified, and information is read out. This is called the tunnel magnetoresistance effect.
- the tunnel magnetoresistance effect is caused by a change in resistance depending on the magnetization direction among the ferromagnetic fixed layer 300, the insulating layer 301, and the ferromagnetic free layer 302.
- the voltage of the TMR film 1 is low (electric resistance is low and current flows easily), and when it is antiparallel, the voltage is Is high (high electrical resistance, current does not flow easily).
- the manufacturing process of the portion of the TMR element 50 of FIG. 1 will be described in detail along with the characteristics of the materials according to FIG.
- the TMR film structure is an example in which the best TMR ratio and low current spin torque magnetization reversal can be obtained.
- the ferromagnetic fixed layer 300, the ferromagnetic free layer 302 are combined with CoFeB, and the insulating layer 301 is combined with MgO. Will be described.
- Electrode 500 is formed into a film.
- TiN, Ti, Al, AlCu, Ta, Ta / Ru, or the like can be used.
- Step (2) The metal layer 400 is formed.
- the metal layer 400 preferably has an amorphous structure.
- a multilayer film such as Ta or Ta / metal film / Ta can be used.
- Step (3) The orientation control layer 401 is formed.
- the orientation control layer it is desirable to use a Ta film having an amorphous structure.
- Step (4) The tunnel magnetoresistive film 1 composed of the ferromagnetic fixed layer 300, the insulating layer 301, and the ferromagnetic free layer 302 is formed.
- CoFeB is applied to the ferromagnetic pinned layer 300 and the ferromagnetic free layer 302
- (001) -oriented MgO is applied to the insulating film 301.
- a feature of this process is that the MgO film of the insulating layer 301 can have a good (001) orientation by forming a CoFeB film in the ferromagnetic fixed layer 300 in an amorphous structure at the time of film formation.
- a film of Ru, Ta, Ta / Ru, Ta / Ru, MgO / Ta, MgO / Ta / Ru, MgO / Ru / Ta, or the like is used as the protective film.
- steps (1) to (5) it is desirable to form a continuous laminated film using a sputtering method in a vacuum without exposing from a vacuum atmosphere.
- all or a part of the layers may be formed using a molecular beam epitaxy method.
- the high-quality TMR element 50 can be manufactured.
- This may be followed by heat treatment for the purpose of improving the TMR ratio in step (10) described later. It is possible to improve the TMR ratio by applying a magnetic field in the horizontal or vertical direction in the stacking direction of the TMR film during the heat treatment.
- Step (6) Using a resist or metal mask having a desired dimension, ion milling or reactive ion etching is carried out using the resist or metal mask as a mask to form a pillar shape. At this time, the surface is exposed to the metal layer 400 by stopping the etching at a slightly deeper position in the film thickness direction (perpendicular to the film surface) from the surface of the metal layer 400 or the surface of the metal layer 400.
- the exposed surface and side surfaces of the metal layer 400 are preferably amorphous (amorphous structure).
- the TMR element has a planar dimension of 100 ⁇ 200 nm 2 , a TMR element having a finer width of 45 nm or less can be formed by this method.
- Step (7) The MgO passivation layer 200 is coated on the side surface of the pillar and the exposed surface of the metal layer 400.
- the (001) plane of the MgO passivation layer 200 is easily oriented in the direction perpendicular to the film surface.
- the interlayer insulating layer 201 is made of an insulating film such as SiO, SiN, AlO, or AlN, and is formed by CVD or the like. Further, it may be formed by sputtering. In particular, when a film is formed by CVD, heat of 200 degrees or more is applied.
- a material such as W, Al, AlCu, or Ti is used for the electrode 501.
- Process (10) Heat treatment at 350 ° C. or higher is performed. The purpose of this is to maximize the TMR ratio of the tunnel magnetoresistive effect element 50 and to reduce the spin torque magnetization reversal current, and to improve the impurity treatment in the electrode after the electrode 501 is formed and to improve the yield and distribution of electrical characteristics. Implementation is needed for this. It is possible to improve the TMR ratio by applying a magnetic field in the horizontal or vertical direction in the stacking direction of the TMR film during the heat treatment. As described above, when the tunnel magnetoresistive element 50 is heat-treated at 350 ° C. or more, diffusion of elements from the orientation control layer and the ferromagnetic layer occurs. In particular, Mn and Ru used in the embodiments of the TMR element shown in FIGS.
- the MgO passivation layer 200 of the present embodiment has a function of suppressing such element diffusion. In addition, it is possible to reduce the influence of element diffusion on the heating performed when the interlayer insulating layer 201 is formed in the step (8).
- the relationship between the improvement of the TMR ratio by heat treatment and the crystal orientation is shown in FIG.
- the TMR film 1 is formed of CoFeB / MgO / CoFeB using CoFeB for the ferromagnetic fixed layer 300, the ferromagnetic free layer 302, and MgO for the insulating layer 301, it is amorphous during film formation by heat treatment.
- the crystallization progresses using the (001) -oriented MgO sandwiched between the existing CoFeBs as a template, and the TMR ratio is optimized.
- CoFeB begins to crystallize at a temperature around 320 degrees.
- the TMR ratio increases with the heat treatment temperature, and the value becomes maximum at a temperature of 400 degrees or more.
- the TMR ratio becomes maximum at a low heat treatment temperature, and the TMR ratio also decreases. Since the crystallization of CoFeB is promoted by using the (001) -oriented MgO insulating layer 301 as a template, the presence of the (001) -oriented MgO passivation layer at the pillar end causes the crystallization from the sidewall to proceed, and the CoFeB crystallization. The characteristics are made uniform. As a result, not only the element diffusion of each layer is suppressed, but also the CoFeB crystal can be made uniform, the breakdown voltage of the interlayer insulating film can be prevented from being lowered, and the TMR ratio can be improved.
- FIG. 2 shows the TMR film 2 having a configuration in which the antiferromagnetic layer 4011 is in contact with the ferromagnetic fixed layer 300 in order to stably fix the magnetization direction of the ferromagnetic fixed layer 300 in one direction.
- the antiferromagnetic layer 4011 can obtain the best characteristics by using a material such as MnIr or MnPt. By stably fixing the magnetization direction of the ferromagnetic fixed layer 300 in one direction, it is possible to read and write information stably.
- FIG. 3 shows that the ferromagnetic pinned layer 300 is a laminated ferrimagnetic pinned layer formed by two ferromagnetic layers 3001 and 3003 whose magnetizations are antiparallel coupled through a nonmagnetic layer 3002 such as Ru.
- a nonmagnetic layer 3002 such as Ru.
- An example of the structure of the film 3 is shown. With this configuration, the magnetization direction of the ferromagnetic pinned layer 300 can be more stably fixed in one direction than in FIG. 2, so that stable reading and writing can be performed.
- FIG. 4 shows the TMR film 4 in which the ferromagnetic free layer 302 is a laminated ferri-free layer formed by two ferromagnetic layers 3021 and ferromagnetic layers 3023 whose magnetizations are antiparallel coupled via a nonmagnetic layer 3022. It is an example.
- the ferromagnetic free layer 302 is a laminated ferri-free layer formed by two ferromagnetic layers 3021 and ferromagnetic layers 3023 whose magnetizations are antiparallel coupled via a nonmagnetic layer 3022. It is an example.
- a laminated ferrimagnetic free layer as the ferromagnetic free layer, low current information writing with a current density of 1 MA / cm 2 or less can be realized, and information recording can be maintained for 10 years or more.
- FIG. 5 shows a TMR film 5 having a configuration in which each of the ferromagnetic fixed layer 300 and the ferromagnetic free layer 302 includes two or more ferromagnetic layers.
- the ferromagnetic fixed layer is the ferromagnetic fixed layer 300.
- 2 shows a configuration example in which two layers of a ferromagnetic layer 3100 and a ferromagnetic free layer are composed of two layers of a ferromagnetic free layer 302 and a ferromagnetic layer 3102.
- a perpendicular magnetization film whose magnetization is oriented in the direction perpendicular to the film surface can be used.
- CoFeB is applied to the ferromagnetic pinned layer 300 and the ferromagnetic free layer 302 in contact with the insulating layer 301, and a perpendicular magnetization film is provided on the ferromagnetic layer 3100 and the ferromagnetic layer 3102, so that the magnetization direction of CoFeB is perpendicular. To be guided to. With this configuration, 10-year information record retention is further stabilized.
- materials such as TbFeCo, GdFeCo, CoPt, FePt, CoFeBPt, CoFeBCr, CoCrPt, CoCr, CoPtB, FePtB, CoGd, and CoFeBCr can be applied. Further, a Co / Pt multilayer film, a CoFe / Pt multilayer film, an Fe / Pt multilayer film, a Co / Pd multilayer film, or the like can be used.
- Example 2 7 and 8 are schematic cross-sectional views showing a configuration example of a magnetic memory cell as a second embodiment.
- the TMR element shown in FIGS. 1 to 5 is mounted on the portion indicated by the TMR element 50 in the drawing.
- the C-MOS 100 is composed of two n-type semiconductors 101 and 102 and one p-type semiconductor 103.
- An electrode 21 serving as a drain is electrically connected to the n-type semiconductor 101 and is connected to the ground via an electrode 41 and an electrode 47.
- An electrode 22 serving as a source is electrically connected to the n-type semiconductor 102.
- Reference numeral 23 denotes a gate electrode. The ON / OFF of the current between the source electrode 22 and the drain electrode 21 is controlled by the ON / OFF of the gate electrode 23.
- An electrode 45, an electrode 44, an electrode 43, an electrode 42, and an electrode 500 are stacked on the source electrode 22, and tunnel magnetoresistive films 1 to 5 configured in any of FIGS. It is connected.
- An alignment control layer 401 is formed between the TMR films 1 to 5 and the metal layer 400.
- a protective layer 402 is laminated on the TMR films 1 to 5, and an electrode 501 is formed in contact with the protective layer 402.
- a wiring 40 is formed on the electrode 501, but a bit line can be formed by a stacked wiring of the electrode 501 and the wiring 40. It is also possible to form a bit line with only the wiring 40.
- FIG. 7 shows an example in which the TMR element 50 is formed immediately above the electrode 42
- FIG. 8 shows an example in which the TMR element 50 is formed by extracting the electrode 50 and the metal layer 400 from the electrode 42.
- the MgO passivation 200 is formed so as to cover at least the side walls of the TMR films 1 to 5, the orientation control layer 401, and the protective layer 402, but may be configured to cover the metal layer 400.
- the interlayer insulating film 201 is desirably formed so as to cover the MgO passivation 200.
- the magnetization direction of the ferromagnetic free layer 302 of the tunnel magnetoresistive effect films 1 to 5 is rotated by the current flowing through the tunnel magnetoresistive effect films 1 to 5, that is, the so-called spin transfer torque.
- the spin transfer torque is based on the principle that a spin-polarized current spin that flows in the TMR element gives torque to the magnetic moment of the ferromagnetic free layer 302 of the TMR films 1 to 5 rather than a spatial external magnetic field.
- This spin-polarized current has a mechanism that is generated by passing a current through the TMR films 1 to 5 itself.
- spin transfer torque magnetization reversal is realized by providing means for supplying current from the outside to the TMR films 1 to 5 and flowing current from the means.
- the spin transfer torque acts on the ferromagnetic free layer 302 in the TMR films 1 to 5. To do.
- the power at the time of writing can be reduced to about one-hundred compared with the case where a current magnetic field is used.
- FIG. 9 is a diagram showing a configuration example of a magnetic random access memory in which the above-described magnetic memory cells are arranged.
- a gate electrode 23 constituting a selection unit for selecting an arbitrary magnetic memory of the random access memory and a wiring 40 as a bit are electrically connected to each magnetic memory cell 60.
- the present invention is extremely useful as a tunnel magnetoresistive element and a low power consumption nonvolatile magnetic memory equipped with the same.
- Tunnel magnetoresistive film 100 ... Transistor, 101 ... 1st n-type semiconductor, 102 ... 2nd n-type semiconductor, 103 ... p-type semiconductor, 21 ... Source electrode, 22 ... Drain electrode, 23 ... Gate electrode, 200 ... MgO passivation layer, 201 ... interlayer insulating film, 300 ... ferromagnetic pinned layer, 301 ... insulating layer, 302 ... ferromagnetic free layer, 3001 ... ferromagnetic layer, 3002 ... nonmagnetic layer, 3003 ...
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Abstract
Description
た。
図1は、第一の実施例に係わるTMR素子50の構成を示す断面模式図である。TMR膜1は、強磁性固定層300、絶縁層301、強磁性自由層302により構成されている。また、強磁性固定層300と強磁性自由層302の積層順が逆になってもかまわない。なお、強磁性固定層300、強磁性自由層302にはCoFeBを用いることが望ましい。CoFeB以外に、図11に示した表中のCoFeやCoFeNiなどの材料・組成や、Co-Fe系材料にBを添加した構成、Ni-Fe系材料にBを添加した構成、Co-Ni-Fe系材料にBを添加した構成を用いてもかまわない。また、添加元素はB以外にTa,Ru,Cu,Au,Ti,Cr,Ag,Al,Os,Re,C,O,N,Pd,Pt,Zr,Zn,Ir,W,Mo,Nbなどを単独で用いてもよいし複数用いてもよい。
図7と図8は、第二の実施例としての磁気メモリセルの構成例を示す断面模式図である。図中TMR素子50に示した部分に、図1から図5に示したTMR素子を搭載する。
Claims (20)
- 非晶質の非磁性金属層と、
前記非磁性金属層の上に形成された配向制御層と、
前記配向制御層上に形成された、強磁性自由層と強磁性固定層と前記強磁性自由層と前記強磁性固定層の間に形成された絶縁層からなるトンネル磁気抵抗効果素子と、
前記トンネル磁気抵抗効果素子の側壁と、前記配向制御層の側壁と、前記非磁性金属層の側壁と表面を被覆する酸化マグネシウムパシベーション層と、
前記酸化マグネシウムパシベーション層を被覆する層間絶縁層と、
前記トンネル磁気抵抗効果素子の膜面垂直方向に電流を流すための一対の電極層を有することを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記酸化マグネシウムパシベーション層は、膜面垂直方向に(001)結晶面であることを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記絶縁層は、(001)配向の酸化マグネシウムからなり、
前記強磁性自由層と前記強磁性固定層は、Co、Fe、Ni、Bの少なくとも一つを含有する膜から形成されることを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記強磁性自由層と前記強磁性固定層は、Co、Fe、Ni、Bの少なくとも一つを含有する体心立方格子の強磁性層により形成されることを特徴する磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
スピントランスファートルクにより前記強磁性自由層の磁化を反転させ、トンネル磁気抵抗効果により前記強磁性固定層の磁化方向に対する前記強磁性自由層の磁化方向を検知することを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記強磁性固定層の磁化方向を固定するための反強磁性層を更に有することを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記強磁性固定層は非磁性層を挟んで磁化方向が反平行に結合した第1の強磁性層と第2の強磁性層からなることを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記強磁性自由層は非磁性層を挟んで磁化方向が反平行に結合した第1の強磁性層と第2の強磁性層からなることを特徴とする磁気抵抗効果素子。 - 請求項1記載の磁気抵抗効果素子であって、
前記強磁性自由層と前記強磁性固定層は2層以上の強磁性層により形成されることを特徴とする磁気抵抗効果素子。 - 請求項8記載の磁気抵抗効果素子であって、
前記強磁性層自由層と前記強磁性固定層の少なくとも一方の磁化方向が膜面垂直方向であることを特徴とする磁気抵抗効果素子。 - 非晶質の非磁性金属層と
前記非磁性金属層の上に形成された配向制御層と、
前記配向制御層上に形成された、強磁性自由層と強磁性固定層と前記強磁性自由層と前記強磁性固定層の間に形成された絶縁層からなるトンネル磁気抵抗効果素子と、
前記トンネル磁気抵抗効果素子の側壁と、前記配向制御層の側壁と、前記非磁性金属層の側壁と表面を被覆する酸化マグネシウムパシベーション層と、
前記酸化マグネシウムパシベーション層を被覆する層間絶縁層と、
前記トンネル磁気抵抗効果素子の膜面垂直方向に電流を流すための一対の電極層と、
前記トンネル磁気抵抗効果素子に流れる電流をオン・オフ制御するスイッチング素子とを有することを特徴とする磁気メモリセル。 - 請求項11記載の磁気メモリセルであって、
スピントランスファートルクにより前記強磁性自由層の磁化を反転させ、トンネル磁気抵抗効果により前記強磁性固定層の磁化方向に対する前記強磁性自由層の磁化方向を検知することを特徴とする磁気メモリセル。 - 請求項11記載の磁気メモリセルであって、
前記酸化マグネシウムパシベーション層は、膜面垂直方向に(001)結晶面であることを特徴とする磁気メモリセル。 - 請求項11記載の磁気メモリセルであって、
前記絶縁層は、(001)配向の酸化マグネシウムからなり、前記強磁性自由層と前記強磁性固定層は、Co、Fe、Ni、Bの少なくとも一つを含有する膜から形成されることを特徴とする磁気メモリセル。 - 請求項11記載の磁気メモリセルであって、
前記強磁性自由層と前記強磁性固定層は、Co、Fe、Ni、Bの少なくとも一つを含有する体心立方格子の強磁性層により形成されることを特徴する磁気メモリセル。 - 磁気抵抗効果素子に流れる電流をオン・オフ制御するスイッチング素子を各々備える磁気メモリセルが2次元アレイ状に配列されたメモリセル群と、
前記メモリセル群の中の所望の前記磁気メモリセルを選択する選択部を有し、
前記磁気抵抗効果素子は、
非晶質の非磁性金属層と前記非磁性金属層の上に形成された配向制御層と、前記配向制御層上に形成された、強磁性自由層と強磁性固定層と前記強磁性自由層と前記強磁性固定層の間に形成された絶縁層からなるトンネル磁気抵抗効果素子と、前記トンネル磁気抵抗効果素子の側壁と、前記配向制御層の側壁と、前記非磁性金属層の側壁と表面を被覆する酸化マグネシウムパシベーション層と、前記酸化マグネシウムパシベーション層を被覆する層間絶縁層と、前記トンネル磁気抵抗効果素子の膜面垂直方向に電流を流すための一対の電極層を有することを特徴とする磁気ランダムアクセスメモリ。 - 請求項16記載の磁気ランダムアクセスメモリであって、
前記選択部によって選択された前記磁気メモリセルの前記磁気抵抗効果素子に電流を流し、スピントランスファートルクによって前記強磁性自由層の磁化を反転させて情報の書き込みを行うことを特徴とする磁気ランダムアクセスメモリ。 - 請求項16記載の磁気ランダムアクセスメモリであって、
前記酸化マグネシウムパシベーション層は、膜面垂直方向に(001)結晶面であることを特徴とする磁気ランダムアクセスメモリ。 - 請求項16記載の磁気ランダムアクセスメモリであって、
前記絶縁層は、(001)配向の酸化マグネシウムからなり、
前記強磁性自由層と強磁性固定層は、Co、Fe、Ni、Bの少なくとも一つを含有する膜から形成されることを特徴とする磁気ランダムアクセスメモリ。 - 請求項16記載の磁気ランダムアクセスメモリであって、
前記強磁性自由層と前記強磁性固定層は、Co、Fe、Ni、Bの少なくとも一つを含有する体心立方格子の強磁性層により形成されることを特徴する磁気ランダムアクセスメモリ。
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- 2009-11-16 WO PCT/JP2009/006122 patent/WO2010067520A1/ja active Application Filing
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Cited By (6)
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JP2013197345A (ja) * | 2012-03-21 | 2013-09-30 | Toshiba Corp | 磁気抵抗効果素子及び磁気メモリ |
US8803267B2 (en) | 2012-03-21 | 2014-08-12 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetoresistive memory |
US9437810B2 (en) | 2013-03-14 | 2016-09-06 | Kabushiki Kaisha Toshiba | Magnetoresistive element and magnetic memory |
WO2018043377A1 (ja) * | 2016-08-31 | 2018-03-08 | 国立大学法人東北大学 | 磁気トンネル接合素子を備える磁気メモリの製造方法 |
JPWO2018043377A1 (ja) * | 2016-08-31 | 2019-06-24 | 国立大学法人東北大学 | 磁気トンネル接合素子を備える磁気メモリの製造方法 |
US10644234B2 (en) | 2016-08-31 | 2020-05-05 | Tohoku University | Method for producing magnetic memory comprising magnetic tunnel junction element |
Also Published As
Publication number | Publication date |
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JP5337817B2 (ja) | 2013-11-06 |
US8743593B2 (en) | 2014-06-03 |
KR20110094045A (ko) | 2011-08-19 |
CN102246327B (zh) | 2013-11-27 |
US20110233700A1 (en) | 2011-09-29 |
KR101255474B1 (ko) | 2013-04-16 |
JPWO2010067520A1 (ja) | 2012-05-17 |
CN102246327A (zh) | 2011-11-16 |
EP2375465A1 (en) | 2011-10-12 |
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