WO2009096165A1 - 光学的情報記録媒体とその製造方法、及びターゲット - Google Patents
光学的情報記録媒体とその製造方法、及びターゲット Download PDFInfo
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- WO2009096165A1 WO2009096165A1 PCT/JP2009/000288 JP2009000288W WO2009096165A1 WO 2009096165 A1 WO2009096165 A1 WO 2009096165A1 JP 2009000288 W JP2009000288 W JP 2009000288W WO 2009096165 A1 WO2009096165 A1 WO 2009096165A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
- G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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- G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Definitions
- the present invention relates to an information recording medium for optically recording, erasing, rewriting and / or reproducing information, a manufacturing method thereof, and a target.
- phase change type information recording medium that utilizes a phenomenon that the recording layer (phase change material layer) causes a phase change.
- an information recording medium that optically records, erases, rewrites and reproduces information using a laser beam is used to change the phase change material of the recording layer by heat generated by laser beam irradiation. For example, the state is changed between the crystalline phase and the amorphous phase, and the difference in reflectance between the crystalline phase and the amorphous phase is detected and read as information.
- the initial state of the recording layer is generally a crystalline phase
- a high power (recording power) ) Is irradiated with the laser beam to melt the recording layer and rapidly cool it, so that the laser irradiated portion is made into an amorphous phase.
- the laser irradiation part is made into a crystalline phase by irradiating a laser beam with a lower power (erase power) than that at the time of recording to raise the temperature of the recording layer and gradually cool it.
- the rewritable information recording medium new information is recorded while erasing the recorded information by irradiating the recording layer with a laser beam that is power-modulated between a high power level and a low power level, or It can be rewritten.
- the recording layer In order for the recording layer to change to the crystalline phase, it is necessary to hold the recording layer for a certain period of time (crystallization time) at the temperature at which it changes to the crystalline phase (crystallization temperature). The shorter the crystallization time, the shorter the time required for the change to the crystal phase, so that a short time, that is, high-speed erasing / rewriting becomes possible.
- the initial state of the recording layer is generally an amorphous phase.
- a laser beam is irradiated into a crystal phase by irradiating a laser beam of high power (recording power) to raise the temperature of the recording layer and gradually cooling it.
- the spot diameter of the laser beam can be reduced by using a blue-violet laser with a short wavelength or by using an objective lens with a large numerical aperture (NA) by reducing the thickness of the substrate on which the laser beam is incident.
- NA numerical aperture
- an optical information recording medium having two information layers is used to double the recording capacity, and two information layers are recorded and reproduced by a laser beam incident from one side (for example, JP 2000-36130 A (see page 2-11, FIG. 2)).
- a laser beam that has passed through an information layer close to the laser beam incident side (hereinafter referred to as the first information layer) is used, and an information layer (hereinafter referred to as the first information layer) far from the laser beam incident side is used. 2 information layers).
- the first information layer it is necessary to make the recording layer and the reflection layer disposed in order to efficiently absorb the light into the recording layer and increase the reflectance of the first information layer to be extremely thin.
- the transmittance of the first information layer is increased by using TiO 2 which is an oxide of titanium (Ti) as the transmittance adjusting layer (for example, International Publication No. 2003/025992 (No. 10-20)). Page, Figure 1)).
- the conventionally used TiO 2 layer of the transmittance adjusting layer is formed by a sputtering method that is generally used as a film forming method.
- a sputtering method that is generally used as a film forming method.
- the deposition rate of the TiO 2 layer depends on the degree of vacuum in the deposition chamber, the deposition rate varies within a certain range. For this reason, there was also a problem that it is difficult to keep the TiO 2 layer in a desired film thickness range particularly during mass production.
- the present invention has been made in order to solve the above-described problems, and has a high film formation speed without greatly degrading the characteristics such as the refractive index and moisture resistance of the conventional transmittance adjusting layer, and
- An object of the present invention is to provide an optical information recording medium having high mass productivity by providing a transmittance adjusting layer whose deposition rate does not depend on the degree of vacuum in the deposition chamber.
- Another object of the present invention is to provide a target that can be used when forming the transmittance adjusting layer as described above.
- an optical information recording medium of the present invention includes N information layers (N is a natural number of 2 or more), and an intermediate layer that optically separates the N information layers from each other.
- the N information layers are the first information layer to the Nth information layer in order from the light incident side
- the Lth information layer is included in the Nth information layer.
- the information layer (L is at least one natural number satisfying 1 ⁇ L ⁇ N ⁇ 1) includes a recording layer capable of recording information by light irradiation, a reflective layer, and a transmittance adjusting layer from the light incident side.
- the transmittance adjusting layer contains tungsten (W) and oxygen (O).
- the present invention is a method for producing the above-described optical information recording medium of the present invention, comprising at least a step of forming the transmittance adjusting layer, wherein the transmittance adjusting layer is formed,
- the transmittance adjusting layer is formed using a target containing at least tungsten (W) and oxygen (O), or a target containing at least tungsten (W) and a gas containing at least oxygen (O) are used.
- permeability adjustment layer into a film is also provided.
- the present invention provides a target (first target) containing at least tungsten (W) and M1 (where M1 is at least one element selected from Ce, Nb and Ti), or at least tungsten (W).
- M1 is at least one element selected from Ce, Nb and Ti
- W at least tungsten
- M2 is at least one element selected from Ag, Bi, Mg, Mn, Y, Zn, and Zr
- the optical information recording medium of the present invention it is possible to realize a transmittance adjusting layer having a high film formation speed and a film formation speed that does not depend on the degree of vacuum in the film formation chamber without deteriorating its characteristics.
- An optical information recording medium having high layer transmittance and excellent mass productivity can be provided. Further, according to the method for producing an optical information recording medium of the present invention and the target of the present invention, the optical information recording medium of the present invention can be easily produced.
- FIG. 1 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having N information layers according to the present invention.
- FIG. 2 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having two information layers according to the present invention.
- FIG. 3 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having three information layers according to the present invention.
- FIG. 4 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having four information layers according to the present invention.
- FIG. 5 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having N information layers according to the present invention.
- FIG. 1 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having N information layers according to the present invention.
- FIG. 2 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having two information layers according to the
- FIG. 6 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having two information layers according to the present invention.
- FIG. 7 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having three information layers according to the present invention.
- FIG. 8 is a partial cross-sectional view showing an example of the layer structure of an optical information recording medium having four information layers according to the present invention.
- FIG. 9 is a diagram schematically showing a part of the configuration of a recording / reproducing apparatus used for recording / reproducing of the optical information recording medium of the present invention.
- FIG. 10 is a diagram schematically showing a part of a sputtering apparatus used when manufacturing the optical information recording medium of the present invention.
- An optical information recording medium comprises N information layers (N is a natural number of 2 or more) and an intermediate layer that optically separates the N information layers from each other.
- the Lth information layer (L is 1 ⁇ L) included in the N information layers.
- ⁇ N ⁇ 1 at least one natural number) includes a recording layer capable of recording information by light irradiation, a reflective layer, and a transmittance adjusting layer in this order from the light incident side.
- the rate adjusting layer includes tungsten (hereinafter referred to as “W”) and oxygen (hereinafter referred to as “O”).
- the transmittance adjusting layer may further contain M1 (where M1 is at least one element selected from Ce, Nb, and Ti).
- M1 is at least one element selected from Ce, Nb, and Ti.
- the transmittance adjusting layer has the following formula (1): W a1 M1 b1 O 100-a1-b1 (atomic%) (1) (However, a1 and b1 may satisfy 0 ⁇ a1 ⁇ 30 and 0 ⁇ b1 ⁇ 29).
- materials represented by the formula (1) materials satisfying a1 satisfying 10 ⁇ a1 ⁇ 22 and b1 satisfying 5 ⁇ b1 ⁇ 23 are preferably used.
- the transmittance adjusting layer has the following formula (2): (WO 3 ) 100-c1 (D1) c1 (mol%) (2) (However, D1 is at least one compound selected from CeO 2 , Nb 2 O 5 and TiO 2 , and c1 satisfies 0 ⁇ c1 ⁇ 95). Of the materials represented by the formula (2), materials in which c1 satisfies 50 ⁇ c1 ⁇ 80 are preferably used.
- the refractive index of the transmittance adjusting layer can be increased, and the transmittance of the information layer can be further increased.
- W a1 M1 b1 O 100-a1-b1 (atomic%) is based on the total number of “W” atoms, “M1” atoms, and “O” atoms (100%). It shows that it is a composition formula expressed as. Furthermore, “(WO 3 ) 100-c1 (D1) c1 (mol%)” indicates that it is a mixture of (100-c1) mol% of WO 3 and c1 mol% of compound D1.
- M1 shown below also represents at least one element selected from Ce, Nb, and Ti as described above.
- the transmittance adjusting layer may further contain M2 (where M2 is at least one element selected from Ag, Bi, Mg, Mn, Y, Zn, and Zr).
- M2 is at least one element selected from Ag, Bi, Mg, Mn, Y, Zn, and Zr.
- the transmittance adjusting layer may contain at least one compound selected from Ag 2 WO 4 , Bi 2 WO 6 , MgWO 4 , MnWO 4 , Y 2 W 3 O 12 , ZnWO 4 and ZrW 2 O 8. .
- the transmittance adjusting layer has the following formula (3): W a2 M2 b2 O 100-a2-b2 (atomic%) (3) (However, a2 and b2 may satisfy the material 0 ⁇ a2 ⁇ 30 and 0 ⁇ b2 ⁇ 35).
- M2 shown below also represents at least one element selected from Ag, Bi, Mg, Mn, Y, Zn, and Zr, as described above.
- the transmittance adjusting layer containing W and O may further contain both M1 and M2.
- the transmittance adjusting layer has the following formula (4): W a3 M1 b3 M2 c3 O 100-a3-b3-c3 (atomic%) (4) (However, a3, b3, and c3 may satisfy the following conditions: 0 ⁇ a3 ⁇ 30, 4 ⁇ b3 ⁇ 16, 3 ⁇ c3 ⁇ 22).
- an optical information recording medium having a high refractive index of the transmittance adjusting layer, a transmittance of the information layer, a stability of the transmittance adjusting layer and a high productivity can be provided.
- the transmittance adjusting layer in the optical information recording medium of the present invention is a small amount of components other than the components constituting each of the above materials as long as the transmittance adjusting layer having the characteristics intended by the present invention is obtained. Although it may contain, what consists of said each material substantially is used suitably. Note that the transmittance adjusting layer is formed substantially only from the above materials, not to mention that the transmittance adjusting layer is made of only the above materials, and of course, from the material in which other components are inevitably mixed in the above materials. It is meant to include.
- the film thickness d1 (nm) of the transmittance adjusting layer may be in the range of 9 ⁇ d1 ⁇ 30. Thereby, the transmittance of the information layer can be increased.
- the recording layer may be a layer capable of causing a phase change by light irradiation.
- the recording layer may include at least one element selected from Sb, Bi, In, and Sn, Ge and Te, and the Te content in the recording layer may be 50 atomic% or more. Further, the recording layer may contain 70 atomic% or more of Sb.
- the film thickness of the recording layer may be 9 nm or less. Thereby, the transmittance of the information layer can be increased.
- the reflective layer may mainly contain Ag. That the reflective layer mainly contains Ag means that the content of Ag in the reflective layer is 50 atomic% or more. As a result, an optical information recording medium having good information layer transmittance, recording sensitivity, and signal intensity can be provided.
- the thickness of the reflective layer may be 15 nm or less. Thereby, the transmittance of the information layer can be increased.
- the intermediate layer may mainly contain an acrylic resin. That the intermediate layer mainly contains an acrylic resin means that the content of the resin in the intermediate layer is 90% by weight or more. As a result, an optical information recording medium with high mass productivity can be provided.
- a method for producing an optical information recording medium of the present invention is a method for producing the above-described optical information recording medium of the present invention, and includes at least a step of forming a transmittance adjusting layer containing W and O, In the step of forming the transmittance adjusting layer, the transmittance adjusting layer is formed using a target containing at least W and O, or a target containing at least W and a gas containing at least O are used. Then, the transmittance adjusting layer is formed.
- the target and the transmittance adjusting layer may further contain M1. This makes it possible to manufacture an optical information recording medium in which the refractive index of the transmittance adjusting layer is increased and the transmittance of the information layer is further increased.
- the target and the transmittance adjusting layer may further contain M2.
- the stability of the transmittance adjusting layer can be improved, and an optical information recording medium having a high information layer transmittance can be manufactured with high productivity.
- the method for manufacturing an optical information recording medium of the present invention may further include a step of forming an intermediate layer before the step of forming the transmittance adjusting layer.
- a target (first target) used at the time of manufacturing is at least W And M1.
- This first target may further contain M2.
- a transmittance adjusting layer containing W, O, M1, and M2 can be formed, which has higher stability and can further increase the transmittance of the information layer.
- the first target may contain O. In that case, the transmittance adjustment layer of the optical information recording medium of the present invention can be produced without performing reactive sputtering using a gas containing oxygen. It is.
- the first target of the present invention contains W, M1, and O
- the first target is represented by the following formula (5): W a1 M1 b1 O 100-a1-b1 (atomic%) (5) (However, a1 and b1 may satisfy 0 ⁇ a1 ⁇ 30 and 0 ⁇ b1 ⁇ 29).
- the first target is represented by the following formula (6): (WO 3 ) 100-c1 (D1) c1 (mol%) (6) (However, D1 is at least one compound selected from CeO 2 , Nb 2 O 5 and TiO 2 , and c1 satisfies 0 ⁇ c1 ⁇ 95).
- the first target of the present invention contains W, M1, M2 and O
- the first target is represented by the following formula (7): W a3 M1 b3 M2 c3 O 100-a3-b3-c3 (atomic%) (7) (However, a3, b3, and c3 may satisfy the following conditions: 0 ⁇ a3 ⁇ 30, 4 ⁇ b3 ⁇ 16, 3 ⁇ c3 ⁇ 22).
- the 1st target in this invention is a target containing each said material, and may contain other components according to the component of the transmittance
- substantially formed only by the above materials includes not only the case where the first target is made of only the above materials but also the case where the first target is made of a material in which other components are inevitably mixed. It is.
- an optical information recording medium of the present invention when manufacturing an optical information recording medium having a transmittance adjusting layer containing W, O, and M2, as another target (second target) used at the time of manufacturing, at least A target containing W and M2 can also be used.
- This second target may further contain O.
- this second target is represented by the following formula (8): W a2 M2 b2 O 100-a2-b2 (atomic%) (8) (However, a2 and b2 may satisfy the material 0 ⁇ a2 ⁇ 30 and 0 ⁇ b2 ⁇ 35).
- the 2nd target in this invention is a target containing each said material, and may contain another component according to the component of the transmittance
- FIG. 1 shows a partial cross-sectional view of the optical information recording medium 9 of the first embodiment.
- the optical information recording medium 9 is a multilayer optical information recording medium capable of recording and reproducing information by irradiation with the laser beam 1 from one side.
- the optical information recording medium 9 includes an Nth information layer 7,..., A second information layer 4, and a first information layer 10 that are sequentially stacked on a substrate 8 via intermediate layers 6, 5, 3, and the like.
- the information layer includes N pieces (N is a natural number satisfying N ⁇ 2) and the transparent layer 2.
- the information layer arranged at the Kth (1 ⁇ K ⁇ N) from the incident side of the laser beam 1 is referred to as a “Kth information layer”.
- the N-1 information layer (not shown) is a light transmission type information layer.
- the material of the transparent layer 2 is made of a resin such as a photo-curing resin (particularly an ultraviolet-curing resin) or a slow-acting thermosetting resin, or a dielectric, and has a small light absorption with respect to the laser beam 1 to be used.
- a resin such as a photo-curing resin (particularly an ultraviolet-curing resin) or a slow-acting thermosetting resin, or a dielectric
- the birefringence is optically small in the short wavelength region.
- an acrylic resin is particularly preferable.
- the transparent layer 2 may be a sheet or plate made of a transparent disc-like polycarbonate, an amorphous polyolefin, a resin such as PMMA (polymethylmethacrylate), or glass.
- the transparent layer 2 is bonded to the first dielectric layer 102 using a resin such as a photocurable resin (particularly an ultraviolet curable resin) or a slow-acting thermosetting resin, or an adhesive sheet.
- a resin such as a photocurable resin (particularly an ultraviolet curable resin) or a slow-acting thermosetting resin, or an adhesive sheet.
- the wavelength ⁇ of the laser beam 1 is particularly preferably 450 nm or less in the case of high-density recording. This is because the spot diameter when the laser beam 1 is condensed is determined by the wavelength ⁇ (the shorter the wavelength ⁇ , the smaller the spot diameter can be condensed). If ⁇ is less than 350 nm, light absorption by the transparent layer 2 and the like will increase. Therefore, ⁇ is more preferably in the range of 350 nm to 450 nm.
- the substrate 8 is a transparent disk-shaped substrate.
- a resin such as polycarbonate, amorphous polyolefin or PMMA, or glass can be used.
- polycarbonate is particularly useful because of its excellent transferability and mass productivity and low cost.
- a guide groove for guiding a laser beam may be formed on the surface of the substrate 8 on the Nth information layer 7 side as necessary.
- the surface of the substrate 8 opposite to the Nth information layer 7 side is preferably smooth.
- the thickness of the substrate 8 is preferably in the range of 0.5 mm to 1.2 mm so that sufficient strength is ensured and the thickness of the optical information recording medium 9 is about 1.2 mm.
- the thickness is preferably in the range of 0.55 mm to 0.65 mm.
- the thickness is preferably in the range of 1.05 mm to 1.15 mm.
- the intermediate layers 6, 5, 3, etc. are made of a resin such as a photo-curing resin (particularly an ultraviolet curable resin) or a slow-acting thermosetting resin, or a dielectric.
- the intermediate layers 6, 5, 3, and the like preferably have small optical absorption with respect to the laser beam 1 to be used, and preferably have low optical birefringence in a short wavelength region.
- an acrylic resin is particularly preferable.
- the intermediate layers 6, 5, 3, and the like are layers provided to distinguish the respective focus positions of the first information layer 10, the second information layer 4,. is there.
- the distance between two adjacent information layers and the distance between the first information layer 10 and the Nth information layer 7 farthest from the first information layer are within a range in which the laser beam 1 can be condensed using the objective lens. It is desirable that Therefore, it is preferable that the total thickness of the intermediate layers 6, 5, 3, etc. be within a tolerance that the objective lens can tolerate (for example, 60 ⁇ m or less).
- guide grooves for guiding the laser beam may be formed on the surface on the incident side of the laser beam 1 as necessary.
- the laser beam transmitted through the Kth information layer (in this case, K is a natural number 1 ⁇ K ⁇ N) and the first to (K-1) th information layers only by irradiation with the laser beam 1 from one side. 1 can be recorded and reproduced.
- Any one of the first information layer to the Nth information layer is designated as a read-only information layer (ROM (Read Only Memory)) or a write-once information layer (R (Recordable)) that can be written only once. Also good.
- ROM Read Only Memory
- R write-once information layer
- the first information layer 10 corresponds to the Lth information layer of the optical information recording medium of the present invention.
- the optical information recording medium of the present embodiment when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- the first information layer 10 includes a first dielectric layer 102, a first recording layer 104, a second dielectric layer 106, a first reflection layer 108, and a transmittance adjustment layer 109, which are arranged in order from the incident side of the laser beam 1. Is provided.
- the first information layer 10 may include a first interface layer 103 between the first dielectric layer 102 and the first recording layer 104.
- the first dielectric layer 102 is made of a dielectric.
- the first dielectric layer 102 functions to prevent the first recording layer 104 from being oxidized, corroded, deformed, etc., adjusts the optical distance to increase the light absorption efficiency of the first recording layer 104, and before and after recording. And the function of increasing the signal intensity by increasing the change in the amount of reflected light.
- the first dielectric layer 102 for example TiO 2, ZrO 2, HfO 2 , ZnO, Nb 2 O 5, Ta 2 O 5, SiO 2, SnO 2, Al 2 O 3, Bi 2 O 3, Cr 2 O 3 , Ga 2 O 3 , In 2 O 3 , Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Gd 2 O 3 , Dy 2 O 3 , Yb 2 O 3 , CaO, MgO, CeO 2 and one or more oxides selected from TeO 2 and the like can be used.
- CN Ti-N, Zr-N, Nb-N, Ta-N, Si-N, Ge-N, Cr-N, Al-N, Ge-Si-N, and Ge-Cr-N
- sulfides such as ZnS, carbides such as SiC, fluorides such as LaF 3 and CeF 3 , and C can also be used as the material of the first dielectric layer 102.
- the first dielectric layer 102 can be formed using a mixture of one or more materials selected from the above materials.
- ZnS-SiO 2 which is a mixture of ZnS and SiO 2 is particularly excellent as the material of the first dielectric layer 102.
- ZnS—SiO 2 is an amorphous material, has a high refractive index, a high film formation rate, and good mechanical properties and moisture resistance.
- the thickness of the first dielectric layer 102 has a large change in the amount of reflected light between the case where the first recording layer 104 is in the crystalline phase and the case where it is in the amorphous phase. It can be determined strictly so as to satisfy the condition that the light absorption in one recording layer 104 is large and the transmittance of the first information layer 10 is large.
- the first interface layer 103 disposed as necessary functions to prevent mass transfer between the first dielectric layer 102 and the first recording layer 104 due to repeated recording.
- the first interface layer 103 also functions to adjust the crystallization ability to promote or suppress the crystallization of the first recording layer 104.
- the first interface layer 103 is preferably formed of a material having low light absorption, a high melting point that does not melt during recording, and good adhesion to the first recording layer 104.
- the material having a high melting point that does not melt during recording is a characteristic necessary for melting and not mixing into the first recording layer 104 when the high-power laser beam 1 is irradiated.
- the material of the first interface layer 103 is mixed, the composition of the first recording layer 104 is changed, and the rewriting performance is significantly lowered. Further, the material having good adhesion with the first recording layer 104 is a characteristic necessary for ensuring reliability.
- the first interface layer 103 is a material similar to the material that can be used for the first dielectric layer 102, that is, a material containing at least one selected from the oxides, nitrides, carbides, sulfides, and fluorides. Can be formed. Among these, a material containing Cr and O is particularly preferable because it further promotes crystallization of the first recording layer 104. Among these, an oxide in which Cr and O form Cr 2 O 3 is a more preferable material. This is because Cr 2 O 3 is a material having good adhesion to the first recording layer 104.
- the material of the first interface layer 103 a material containing In and O in particular can be used.
- a material containing In and O in particular can be used.
- an oxide in which In and O form In 2 O 3 is a preferable material. This is because In 2 O 3 is a material having good adhesion to the first recording layer 104.
- a material containing Ga and O can be used as the material of the first interface layer 103 in particular.
- an oxide in which Ga and O form Ga 2 O 3 is a preferable material. This is because Ga 2 O 3 is a material having good adhesion to the first recording layer 104.
- the first interface layer 103 may further include at least one element selected from Zr, Hf, and Y in addition to Cr and O, Ga and O, or In and O. More preferably it is included.
- ZrO 2 and HfO 2 are materials that are transparent, have a high melting point of about 2700 to 2800 ° C., and have low thermal conductivity among oxides, and improve the repeated rewriting performance of optical information recording media.
- Y 2 O 3 is a transparent material and functions to stabilize ZrO 2 and HfO 2 . Further, even if one or more of these three types of oxides are mixed to form the first interface layer 103 partially or entirely in contact with the first recording layer 104, repeated rewriting performance is achieved.
- the first information layer 10 which is excellent in reliability and high in reliability can be realized.
- the content of Cr 2 O 3 , Ga 2 O 3 , or In 2 O 3 in the first interface layer 103 is preferably 10 mol% or more. Further, the content of Cr 2 O 3 in the first interface layer 103 is preferably 70 mol% or less in order to keep light absorption in the first interface layer 103 small. When Cr 2 O 3 increases, light absorption tends to increase.
- the first interface layer 103 may further include a material containing Si.
- Si in the first interface layer 103 as, for example, SiO 2 , the transparency of the first interface layer 103 is increased, and the first information layer 10 having excellent recording performance can be realized.
- the content of SiO 2 in the first interface layer 103 is preferably 5 mol% or more, and is preferably 50 mol% or less to ensure adhesion with the first recording layer 104, and is preferably 10 mol% or more and 40 mol% or less. It is more preferable that
- the film thickness of the first interface layer 103 is within a range of 0.5 nm to 15 nm so that the change in the amount of reflected light before and after recording of the first information layer 10 does not become small due to light absorption in the first interface layer 103. Desirably, it is more preferably in the range of 1 nm to 10 nm.
- the material of the first recording layer 104 is made of a material that causes a phase change between a crystalline phase and an amorphous phase when irradiated with the laser beam 1.
- the material of the first recording layer 104 Ge—Te, (Ge—Sn) Te, GeTe—Sb 2 Te 3 , (Ge—Sn) Te—Sb 2 Te 3 , GeTe—Bi 2 Te 3 , ( Ge—Sn) Te—Bi 2 Te 3 , GeTe— (Sb—Bi) 2 Te 3 , (Ge—Sn) Te— (Sb—Bi) 2 Te 3 , GeTe— (Bi—In) 2 Te 3 , and A material containing any one of (Ge—Sn) Te— (Bi—In) 2 Te 3 can be used.
- the material of the first recording layer 104 includes Sb—Ga, (Sb—Te) —Ga, Sb—Ge, (Sb—Te) —Ge, Sb—In, (Sb—Te) —In, and Sb—Mn.
- a material containing any of —Ge, Sb—Sn—Ge, Sb—Mn—Sn—Ge, and (Sb—Te) —Ag—In can also be used.
- the first recording layer 104 for example, a material containing at least one element selected from Sb, Bi, In, and Sn, Ge, and Te is preferably used.
- the first recording layer 104 may contain 50 atomic% or more of Te.
- the first recording layer 104 when the first recording layer 104 is formed of a material containing Sb, it may contain 70 atomic% or more of Sb.
- the first information layer 10 needs to have a high transmittance in order to reach the information layer farther than the first information layer 10 from the incident side of the laser beam 1 to the amount of laser light necessary for recording and reproduction. is there.
- the film thickness of the first recording layer 104 is preferably 9 nm or less, and more preferably 8 nm or less.
- the first recording layer 104 includes a layer containing Te, a layer containing Bi, a layer containing Ge, a layer containing Sb, a layer containing Ge—Te, a layer containing Bi—Te, a layer containing Sb—Ge, and the like.
- the recording part may be formed by laminating at least two kinds of layers selected from the above.
- a material represented by “(element A) ⁇ (element B)” is a material containing elements A and B as components, and a mixture of element A and element B or Means an alloy.
- the recording sensitivity and erasure of the phase change information recording medium can be easily adjusted.
- Examples of the laminated structure include Bi 2 Te 3 (3 nm) / GeTe (4 nm), (Bi—In) 2 Te 3 (3 nm) / (GeSn) Te (4 nm), GeTe—Bi 2 Te 3 (5 nm) / (GeSn) Te (2 nm), Sb—Ge (4 nm) / Sb—Te (3 nm), and the like.
- a layer made of a material other than those listed here or to adopt a structure in which the thickness of the layer is other than the film thickness exemplified here, or a structure in which the stacking order is changed. It is.
- the film thickness exemplified above may be regarded as a preferable film thickness ratio, and may be set to 2 to 4 times, for example, depending on the desired film thickness of the recording portion.
- the first recording layer 104 may be formed using a material that causes an irreversible phase change.
- the first recording layer 104 is made of a material represented by Te—O, Te—Pd—O, Bi—O, or Sb—O. It can also be formed.
- the thickness of the first recording layer 104 is preferably 30 nm or less.
- the first recording layer 104 may be a laminated film (for example, a Cu / Si laminated structure) of a material that causes irreversible alloying.
- the second dielectric layer 106 functions to increase the light absorption efficiency of the first recording layer 104 by adjusting the optical distance, and to increase the signal intensity by increasing the amount of reflected light before and after recording.
- the second dielectric layer 106 can be formed using a material similar to the material of the first dielectric layer 102.
- the film thickness of the second dielectric layer 106 is preferably in the range of 0.5 nm to 75 nm, and more preferably in the range of 1 nm to 40 nm. By selecting the film thickness of the second dielectric layer 106 within this range, the heat generated in the first recording layer 104 can be effectively diffused to the first reflective layer 108 side.
- a second interface layer may be disposed between the first recording layer 104 and the second dielectric layer 106.
- the second interface layer is provided between the layer denoted by reference numeral 104 and the layer denoted by reference numeral 106, for example, by reference numeral 105 (The second interface layer is not shown in FIG. 1, but is described as “second interface layer 105” for convenience in this specification).
- the second interface layer 105 can be provided in order to prevent mass transfer that occurs between the second dielectric layer 106 and the first recording layer 104 due to repeated recording.
- the second interface layer 105 can be formed using a material similar to that of the first dielectric layer 102.
- the second interface layer 105 can also be configured using a material containing Cr and O in particular. Among them, an oxide in which Cr and O form Cr 2 O 3 is a preferable material.
- the second interface layer 105 can also be formed using a material containing Ga and O in particular. Among these, an oxide in which Ga and O form Ga 2 O 3 is a preferable material.
- the second interface layer 105 may further include at least one element selected from Zr, Hf, and Y in addition to In and O, Cr and O, or Ga and O. Good.
- the second interface layer 105 may further contain Si in addition to In, Cr, Ga, Zr, Hf, Y, and O. Since the second interface layer 105 tends to have lower adhesion than the first interface layer 103, the lower limit of the preferable content of In 2 O 3 , Cr 2 O 3 or Ga 2 O 3 in the second interface layer 105 is , 20 mol%, more than that of the first interface layer 103.
- the film thickness of the second interface layer 105 is preferably in the range of 0.5 nm to 15 nm, and more preferably in the range of 1 nm to 10 nm.
- the first reflective layer 108 has an optical function of increasing the amount of light absorbed by the first recording layer 104.
- the first reflective layer 108 also has a thermal function of quickly diffusing heat generated in the first recording layer 104 and making the first recording layer 104 amorphous.
- the first reflective layer 108 also has a function of protecting the multilayer film from the environment in which it is used.
- a single metal having high thermal conductivity such as Ag, Au, Cu, and Al can be used.
- an Ag alloy containing 50 atomic% or more of Ag is preferable as a material for the first reflective layer 108 because of its high thermal conductivity.
- the film thickness of the first reflective layer 108 is preferably 15 nm or less, and more preferably 10 nm or less in order to make the transmittance of the first information layer 10 as high as possible. When the film thickness of the first reflective layer 108 is within this range, the thermal diffusion function is sufficient, the reflectance of the first information layer 10 can be secured, and the transmittance of the first information layer 10 is sufficient. Become.
- the transmittance adjustment layer 109 is made of a dielectric and has a function of adjusting the transmittance of the first information layer 10.
- the transmittance adjusting layer 109 allows the transmittance T c1 (%) of the first information layer 10 when the first recording layer 104 is in the crystalline phase and the first recording layer 104 when the first recording layer 104 is in the amorphous phase. Both the transmittance T a1 (%) of one information layer 10 can be increased.
- the transmittance of the first information layer 10 including the transmittance adjusting layer 109 is increased by about 2% to 10% compared to the case where the transmittance adjusting layer 109 is not provided.
- the transmittance adjustment layer 109 also has a function of effectively diffusing heat generated in the first recording layer 104.
- the material of the transmittance adjusting layer 109 preferably contains at least W and O.
- W and O it is preferable that W and O form a compound to form an oxide WO 3 .
- the oxide WO 3 has a high melting point of 1470 ° C. and is stable in the air.
- the transmittance adjusting layer 109 can also be formed using a material containing M1 (where M1 is at least one element selected from Ce, Nb, and Ti).
- the transmittance adjustment layer 109 has the following formula (1): W a1 M1 b1 O 100-a1-b1 (atomic%) (1) (However, a1 and b1 may satisfy 0 ⁇ a1 ⁇ 30 and 0 ⁇ b1 ⁇ 29). Of the materials represented by the formula (1), materials satisfying a1 satisfying 10 ⁇ a1 ⁇ 22 and b1 satisfying 5 ⁇ b1 ⁇ 23 are preferably used.
- the transmittance adjusting layer 109 has the following formula (2): (WO 3 ) 100-c1 (D1) c1 (mol%) (2) (However, D1 is at least one compound selected from CeO 2 , Nb 2 O 5 and TiO 2 , and c1 satisfies 0 ⁇ c1 ⁇ 95). Of the materials represented by the formula (2), materials in which c1 satisfies 50 ⁇ c1 ⁇ 80 are preferably used.
- the refractive index of the transmittance adjusting layer 109 can be increased, and the transmittance of the first information layer 10 can be further increased.
- the transmittance adjusting layer 109 uses a material further containing M2 (where M2 is at least one element selected from Ag, Bi, Mg, Mn, Y, Zn, and Zr). It can also be formed. At this time, the transmittance adjusting layer 109 has at least one compound selected from Ag 2 WO 4 , Bi 2 WO 6 , MgWO 4 , MnWO 4 , Y 2 W 3 O 12 , ZnWO 4 and ZrW 2 O 8 (complex oxidation). Material).
- the transmittance adjusting layer 109 has the following formula (3): W a2 M2 b2 O 100-a2-b2 (atomic%) (3) (However, a2 and b2 may satisfy the material 0 ⁇ a2 ⁇ 30 and 0 ⁇ b2 ⁇ 35). Further, the transmittance adjusting layer 109 has the following formula (4): W a3 M1 b3 M2 c3 O 100-a3-b3-c3 (atomic%) (4) (However, a3, b3, and c3 may satisfy the following conditions: 0 ⁇ a3 ⁇ 30, 4 ⁇ b3 ⁇ 16, 3 ⁇ c3 ⁇ 22). As a result, the stability of the transmittance adjusting layer 109 is increased, and the optical information recording medium 9 having a high transmittance of the first information layer 10 and a high mass productivity can be provided.
- the transmittance adjusting layer 109 formed using these materials has the following properties: The transmittance of the first information layer 10 can be further increased.
- the refractive index n t and the extinction coefficient k t of the transmittance adjusting layer 109 are 2.0 ⁇ nt and k t ⁇ to increase the effect of increasing the transmittance T c1 and T a1 of the first information layer 10. 0.1 is preferable, and 2.4 ⁇ n t ⁇ 3.0 and k t ⁇ 0.05 are more preferable.
- Thickness d1 of the transmittance adjusting layer 109 is preferably in the range of (3/32) ⁇ / n t ⁇ d1 ⁇ (5/32) ⁇ / n t. If the wavelength ⁇ of the laser beam 1 and the refractive index n t of the transmittance adjusting layer 109 are selected so as to satisfy, for example, 350 nm ⁇ ⁇ ⁇ 450 nm and 2.0 ⁇ n t ⁇ 3.0, a preferable range of d1 is 9 nm ⁇ d1 ⁇ 30 nm. By selecting d1 within this range, both the transmittances T c1 and T a1 of the first information layer 10 can be increased.
- the transmittances T c1 and T a1 of the first information layer 10 are used so that the amount of laser light necessary for recording and reproduction reaches an information layer farther from the incident side of the laser beam 1 than the first information layer 10. It is preferable to satisfy 40 ⁇ T c1 and 40 ⁇ T a1 , and it is more preferable to satisfy 46 ⁇ T c1 and 46 ⁇ T a1 .
- the transmittances T c1 and T a1 of the first information layer 10 preferably satisfy ⁇ 5 ⁇ (T c1 ⁇ T a1 ) ⁇ 5, and more preferably satisfy ⁇ 3 ⁇ (T c1 ⁇ T a1 ) ⁇ 3. preferable.
- T c1 and T a1 satisfy this condition, the information recording layer 104 of the first information layer 10 in the first information layer 104 is recorded and reproduced when the information layer located farther from the first information layer 10 from the incident side of the laser beam 1 is recorded.
- the influence of the change in transmittance depending on the state is small, and good recording / reproducing characteristics can be obtained.
- the reflectance R c1 (%) when the first recording layer 104 is in the crystalline phase and the reflectance R a1 (%) when the first recording layer 104 is in the amorphous phase are R a1 ⁇ R c1 is preferably satisfied.
- R c1 and R a1 satisfy the following conditions: 0.1 ⁇ R a1 ⁇ 5 and 4 ⁇ R c1 ⁇ 15 so that the reflectance difference (R c1 ⁇ R a1 ) is increased to obtain good recording / reproduction characteristics. It is preferable to satisfy, and it is more preferable to satisfy 0.1 ⁇ R a1 ⁇ 3 and 4 ⁇ R c1 ⁇ 10.
- the optical information recording medium 9 can be manufactured by the method described below.
- (N ⁇ 1) information layers (Nth information layer 7 to second information layer 4) are placed on a substrate 8 (thickness is, for example, 1.1 mm), and intermediate layers (intermediate layers 6, 5, etc.) are placed. Are sequentially stacked.
- Each information layer consists of a single layer film or a multilayer film.
- Each layer constituting the information layer can be formed by sequentially sputtering a sputtering target as a material in a film forming apparatus.
- the intermediate layer was formed by applying a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin on the information layer, and then rotating the substrate 8 to uniformly extend the resin. Later (spin coating), the resin can be cured.
- the substrate (mold) on which the groove is formed is brought into close contact with the resin before curing, and then the substrate (mold) is brought into close contact with the substrate 8.
- the substrate (mold) is brought into close contact with the substrate 8.
- a printing technique such as a screen method or an ink jet method can be applied to a fine processing technique.
- the intermediate layer 3 (thickness is, for example, 10 ⁇ m) is further formed.
- the first information layer 10 is formed on the intermediate layer 3.
- a substrate 8 in which an intermediate layer 3 is further formed on (N ⁇ 1) information layers stacked via the intermediate layer is placed in a film forming apparatus and transmitted onto the intermediate layer 3.
- a rate adjusting layer 109 is formed. Sputtering using a high frequency (RF) power source in a rare gas (especially Ar gas) atmosphere or a mixed gas atmosphere of a rare gas and a reactive gas (especially O 2 gas) using a target containing at least W and O By doing so, the transmittance adjusting layer 109 containing W and O can be formed.
- RF high frequency
- the transmittance including W and O is obtained by sputtering using an RF power source in an atmosphere of a target including at least W and a gas including at least O (for example, a mixed gas of a rare gas and O 2 gas).
- a gas including at least O for example, a mixed gas of a rare gas and O 2 gas.
- the transmittance adjustment layer 109 has a composition adjusted so as to have a composition containing the material represented by any of the above formulas (1) to (4) or to be a composition made of only those materials.
- the target can be formed by sputtering using a single power source.
- (WO 3) 50 (TiO 2) 50 if (mol%) desired to deposit a transmittance adjusting layer 109 of the composition, for example (WO 3) 50 (TiO 2 ) 50 (mol%) prepared sputtering target of composition to, it can be formed by forming a film at an Ar gas atmosphere or a mixed gas atmosphere of Ar and O 2 gas.
- composition of the actually formed film has a desired composition can be examined by, for example, composition analysis using an X-ray microanalyzer.
- oxygen in the oxide in the film is likely to be deficient or oxygen in the film increases, which may deviate from the desired composition. Therefore, it is possible to obtain a desired film composition by adjusting the composition of the target in advance or adjusting the amount of O 2 gas mixed with Ar gas.
- a small amount of a conductive material is added to the material constituting the transmittance adjusting layer 109 to add conductivity to the target, and sputtering is performed using a direct current (DC) power source or a pulsed DC power source. It is preferable to do.
- DC direct current
- the transmittance adjustment layer 109 can also be formed by simultaneously sputtering each target of a single compound using a plurality of power supplies.
- the transmittance adjusting layer 109 can also be formed by simultaneously sputtering a binary target, a ternary target, or the like in which two or more compounds are combined using a plurality of power supplies. Even when these targets are used, sputtering can be performed in a rare gas atmosphere or in a mixed gas atmosphere of a rare gas and a reactive gas (particularly O 2 gas).
- the first reflective layer 108 is formed on the transmittance adjusting layer 109.
- the first reflective layer 108 is a target made of a metal or an alloy constituting the first reflective layer 108 in a rare gas (eg, Ar gas) atmosphere, or a rare gas and a reactive gas (eg, O 2 gas and N 2 gas). And a sputtering method using a DC power source, a pulse DC power source, or an RF power source in a mixed gas atmosphere. Since the first reflective layer 108 is a metal or an alloy, it is preferable to perform sputtering using a DC power source or a pulse DC power source that can increase the deposition rate.
- the second dielectric layer 106 is a target made of a compound that constitutes the second dielectric layer 106 and is supplied with an RF power source in a rare gas atmosphere or a mixed gas atmosphere of a rare gas and a reactive gas (especially O 2 gas). And can be formed by sputtering. In order to increase the deposition rate, a small amount of a conductive material is added to the material constituting the second dielectric layer 106 to add conductivity to the target, and sputtering is performed using a DC power supply or a pulsed DC power supply. You can also.
- the second dielectric layer 106 is a target made of metal constituting the second dielectric layer 106 using a DC power source, a pulsed DC power source, or an RF power source in a mixed gas atmosphere of a rare gas and a reactive gas. It can also be formed by reactive sputtering.
- the second dielectric layer 106 can be formed by simultaneously sputtering each target of a single compound using a plurality of power supplies.
- the second dielectric layer 106 can also be formed by simultaneously sputtering a binary target, a ternary target, or the like in which two or more compounds are combined using a plurality of power supplies. Even when these targets are used, sputtering can be performed in a rare gas atmosphere or in a mixed gas atmosphere of a rare gas and a reactive gas (particularly O 2 gas).
- a second interface layer 105 is formed on the second dielectric layer 106 as necessary.
- the second interface layer 105 can be formed in the same manner as the second dielectric layer 106.
- the first recording layer 104 is formed on the second dielectric layer 106 or the second interface layer 105.
- the first recording layer 104 includes, for example, a target containing at least one element selected from Sb, Bi, In, and Sn, Ge, Te, and containing 50 atomic% or more of Te, or 70 atomic% of Sb.
- the target including the above can be formed by sputtering using one power source.
- the first recording layer 104 includes, for example, a target including Te, a target including Bi, a target including Ge, a target including Sb, a target including Ge—Te, a target including Bi—Te, and a target including Sb—Ge.
- the composition of the recording layer to be obtained is determined according to the type and number of targets to be used, the output of the power source, and the like. It is preferable to obtain the recording layer 104.
- the use of two or more targets in this way is useful, for example, when it is difficult to form a mixture target.
- the first recording layer 104 is formed as a recording unit formed by laminating two or more layers, for example, a target containing Te, a target containing Bi, a target containing Ge, a target containing Sb, Ge— Forming at least two targets selected from a target containing Te, a target containing Bi-Te, a target containing Sb-Ge, and the like by sequentially and / or simultaneously sputtering using two or more power supplies; You can also. That is, in order to form the recording portion, two or more targets may be used and sputtering may be performed twice or more, or two or more targets may be sputtered simultaneously.
- both the case where the first recording layer 104 recording layer having a single layer structure is formed and the case where the first recording layer 104 is formed as a recording portion formed by stacking two or more layers are used.
- a rare gas, or a mixed gas of a rare gas and a reactive gas (for example, at least one gas selected from N 2 gas and O 2 gas) can be used.
- a power source used for sputtering any one of a DC power source, a pulse DC power source, and an RF power source can be used.
- a first interface layer 103 is formed on the first recording layer 104.
- the first interface layer 103 can be formed in the same manner as the second dielectric layer 106.
- a first dielectric layer 102 is formed on the first interface layer 103.
- the first dielectric layer 102 can be formed in the same manner as the second dielectric layer 106.
- the transparent layer 2 is formed on the first dielectric layer 102.
- the transparent layer 2 can be formed by applying a photocurable resin (particularly, an ultraviolet curable resin) or a slow-acting thermosetting resin on the first dielectric layer 102 and spin-coating the resin, and then curing the resin.
- substrate as the transparent layer 2, and a board
- the transparent layer 2 is formed by applying a resin such as a photo-curing resin (particularly an ultraviolet curable resin) or a slow-acting thermosetting resin on the first dielectric layer 102, and the substrate is the first dielectric layer 102. It can be formed by allowing the resin to harden after spin-coating with a close contact. Alternatively, an adhesive resin can be uniformly applied to the substrate in advance, and can be adhered to the first dielectric layer 102.
- a resin such as a photo-curing resin (particularly an ultraviolet curable resin) or a slow-acting thermosetting resin
- an adhesive resin can be uniformly applied to the substrate in advance, and can be adhered to the first dielectric layer 102.
- the first recording layer 104 can be crystallized by irradiation with a laser beam.
- the optical information recording medium 9 can be manufactured as described above. Note that although a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there. Further, information layers other than the first information layer 10 may be formed in the same manner as the first information layer 10.
- a partial cross-sectional view of the optical information recording medium 12 of Embodiment 2 is shown in FIG.
- the optical information recording medium 12 is a two-layer optical information recording medium capable of recording / reproducing information by irradiation with a laser beam 1 from one side.
- the optical information recording medium 12 includes a second information layer 11, an intermediate layer 3, a first information layer 10, and a transparent layer 2 that are sequentially stacked on the substrate 8.
- the substrate 8, the intermediate layer 3, the first information layer 10, and the transparent layer 2 can be formed using the same materials as those described in the first embodiment. Also, their shapes and functions are the same as those shapes and functions described in the first embodiment.
- the first information layer 10 corresponds to the Lth information layer of the optical information recording medium of the present invention.
- when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- the second information layer 11 includes a third dielectric layer 202, a third interface layer 203, a second recording layer 204, a fourth dielectric layer 206, and a second reflective layer 208 that are arranged in order from the incident side of the laser beam 1. Is provided. Information recording / reproduction of the second information layer 11 is performed by the laser beam 1 transmitted through the transparent layer 2, the first information layer 10, and the intermediate layer 3.
- the third dielectric layer 202 can be formed using a material similar to the material of the first dielectric layer 102 described in the first embodiment. The function is also the same as that of the first dielectric layer 102 of the first embodiment.
- the film thickness of the third dielectric layer 202 is determined based on a condition based on the calculation based on the matrix method that the change in the amount of reflected light between the case where the second recording layer 204 is a crystalline phase and the case where it is an amorphous phase is large. It can be determined strictly to be satisfied.
- the third interface layer 203 can be formed using a material similar to that of the first interface layer 103 of the first embodiment. Further, the function and shape are the same as those of the first interface layer 103 of the first embodiment.
- the second recording layer 204 can be formed of the same material as the first recording layer 104 of the first embodiment.
- the film thickness of the second recording 204 is preferably in the range of 6 nm to 15 nm in order to increase the recording sensitivity of the second information layer 11 when the material causes a reversible phase change. Even within this range, when the second recording layer 204 is thick, the thermal influence on the adjacent region due to the diffusion of heat in the in-plane direction may increase.
- the film thickness of the second recording layer 204 is more preferably in the range of 8 nm to 13 nm.
- the second recording layer 204 is formed using a material that causes irreversible phase change (for example, Te—Pd—O)
- the thickness of the second recording layer 204 is in the range of 10 nm to 40 nm. It is preferable.
- the fourth dielectric layer 206 can be formed using a material similar to the material of the second dielectric layer 106 of the first embodiment. Further, the function and shape are the same as those of the second dielectric layer 106 of the first embodiment.
- a fourth interface layer may be disposed between the second recording layer 204 and the fourth dielectric layer 206 as necessary.
- the fourth interface layer can be formed using a material similar to that of the second interface layer 105 in the first embodiment. Also, the function and shape are the same as those of the second interface layer 105 of the first embodiment.
- the fourth interface layer is provided between the layer indicated by reference numeral 204 and the layer indicated by reference numeral 206, for example, by reference numeral 205. (The fourth interface layer is not shown in FIG. 2, but will be described herein as “fourth interface layer 205” for convenience).
- the second reflective layer 208 can be formed using the same material as the first reflective layer 108 of the first embodiment.
- the function is also the same as that of the first reflective layer 108 of the first embodiment.
- the film thickness of the second reflective layer 208 is preferably 30 nm or more at which the thermal diffusion function is sufficient. Even within this range, when the second reflective layer 208 is thicker than 200 nm, its thermal diffusion function becomes too large, and the recording sensitivity of the second information layer 11 is lowered. Therefore, the film thickness of the second reflective layer 208 is more preferably in the range of 30 nm to 200 nm.
- An interface layer may be further disposed between the second reflective layer 208 and the fourth dielectric layer 206.
- the interface layer is a layer indicated by reference numeral 207 between the layer indicated by reference numeral 208 and the layer indicated by reference numeral 206. It may be formed.
- the interface layer 207 (the interface layer is not shown in FIG. 2 but is described as “interface layer 207” for convenience in this specification).
- a material for forming a material having lower thermal conductivity than the material described for the second reflective layer 208 can be used.
- an Ag alloy is used for the second reflective layer 208, for example, Al or an Al alloy can be used as the material of the interface layer 207.
- the material of the interface layer 207 includes elements such as Cr, Ni, Si and C, TiO 2 , ZrO 2 , HfO 2 , ZnO, Nb 2 O 5 , Ta 2 O 5 , SiO 2 , SnO 2 , Al 2 O 3 , Bi 2 O 3 , Cr 2 O 3 , Ga 2 O 3 , In 2 O 3 , Sc 2 O 3 , Y 2 O 3 , La 2 O 3 , Gd 2 O 3 , Dy 2 O 3 , Yb Oxides such as 2 O 3 , CaO, MgO, CeO 2 , and TeO 2 can be used.
- elements such as Cr, Ni, Si and C, TiO 2 , ZrO 2 , HfO 2 , ZnO, Nb 2 O 5 , Ta 2 O 5 , SiO 2 , SnO 2 , Al 2 O 3 , Bi 2 O 3 , Cr 2 O 3 , Ga 2 O 3 , In 2 O 3 , Sc 2 O 3 ,
- CN Ti-N, Zr-N, Nb-N, Ta-N, Si-N, Ge-N, Cr-N, Al-N, Ge-Si-N, and Ge-Cr-N Nitride such as can also be used.
- sulfides such as ZnS, carbides such as SiC, fluorides such as LaF 3 and CeF 3 , and C can also be used.
- the interface layer 207 can be formed using a mixture of one or more materials selected from the above materials. The thickness of the interface layer 207 is preferably in the range of 3 nm to 100 nm, and more preferably in the range of 10 nm to 50 nm.
- the reflectance R c2 (%) when the second recording layer 204 is in a crystalline phase and the reflectance R a2 (%) when the second recording layer 204 is in an amorphous phase are R a2 ⁇ R c2 is preferably satisfied.
- the reflectance is high in an initial state where no information is recorded, and the recording / reproducing operation can be performed stably.
- the reflectances R c2 and R a2 are 0.2 ⁇ R a2 ⁇ 10 and 12 ⁇ R c2 so that the reflectance difference (R c2 ⁇ R a2 ) is increased to obtain good recording / reproduction characteristics. It is preferable to satisfy ⁇ 40, and it is more preferable to satisfy 0.2 ⁇ R a2 ⁇ 5 and 12 ⁇ R c2 ⁇ 30.
- the optical information recording medium 12 can be manufactured by the method described below.
- the second information layer 11 is formed. Specifically, first, a substrate 8 (having a thickness of, for example, 1.1 mm) is prepared and placed in a film forming apparatus.
- a second reflective layer 208 is formed on the substrate 8.
- the second reflective layer 208 is formed on the side where the guide groove is formed.
- the second reflective layer 208 can be formed by a method similar to that of the first reflective layer 108 in the first embodiment.
- an interface layer 207 is formed on the second reflective layer 208 as necessary.
- the interface layer 207 can be formed by a method similar to that for the first reflective layer 108 or the second dielectric layer 106 of the first embodiment.
- a fourth dielectric layer 206 is formed on the second reflective layer 208 or the interface layer 207.
- the fourth dielectric layer 206 can be formed by the same method as the second dielectric layer 106 of the first embodiment.
- a fourth interface layer 205 is formed on the fourth dielectric layer 206 as necessary.
- the fourth interface layer 205 can be formed by the same method as the second dielectric layer 106 of the first embodiment.
- the second recording layer 204 is formed on the fourth dielectric layer 206 or the fourth interface layer 205.
- the second recording layer 204 can be formed by a method similar to that of the first recording layer 104 of Embodiment 1 using a target corresponding to the composition.
- a third interface layer 203 is formed on the second recording layer 204 as necessary.
- the third interface layer 203 can be formed by the same method as the second dielectric layer 106 of the first embodiment.
- a third dielectric layer 202 is formed on the second recording layer 204 or the third interface layer 203.
- the third dielectric layer 202 can be formed by the same method as the second dielectric layer 106 of the first embodiment.
- the second information layer 11 is formed.
- the intermediate layer 3 (having a thickness of, for example, 25 ⁇ m) is formed on the third dielectric layer 202 of the second information layer 11.
- the intermediate layer 3 is formed by applying a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin on the third dielectric layer 202, spin-coating, and then curing the resin. it can.
- an initialization process for crystallizing the entire surface of the second recording layer 204 may be performed as necessary.
- the second recording layer 204 can be crystallized by irradiation with a laser beam.
- the first information layer 10 is formed on the intermediate layer 3. Specifically, first, on the intermediate layer 3, the transmittance adjustment layer 109, the first reflection layer 108, the second dielectric layer 106, the first recording layer 104, the first interface layer 103, and the first dielectric layer 102. Are formed in this order. At this time, the second interface layer 105 may be formed between the second dielectric layer 106 and the first recording layer 104 as necessary. In addition, the first interface layer 103 is not necessarily provided because it may be provided as necessary. Each of these layers can be formed by the method described in Embodiment Mode 1.
- the transparent layer 2 (thickness is, for example, 75 ⁇ m) is formed on the first dielectric layer 102.
- the transparent layer 2 can be formed by the method described in the first embodiment.
- the first recording layer 104 can be crystallized by irradiation with a laser beam.
- an initialization process for crystallizing the entire surfaces of the second recording layer 204 and the first recording layer 104 is performed as necessary. You may go. In this case, if the first recording layer 104 is crystallized first, the laser power required to crystallize the second recording layer 204 tends to increase, so the second recording layer 204 is crystallized first. It is preferable to make it.
- the optical information recording medium 12 can be manufactured.
- a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- the optical information recording medium 16 is a three-layer optical information recording medium capable of recording / reproducing information by irradiation with the laser beam 1 from one side.
- the optical information recording medium 16 includes a third information layer 15, an intermediate layer 5, a second information layer 14, an intermediate layer 3, a first information layer 13, and a transparent layer 2 that are sequentially stacked on the substrate 8. Yes.
- the substrate 8, the intermediate layers 3 and 5, and the transparent layer 2 can be formed using the same materials as those described in the first and second embodiments. Also, their shapes and functions are the same as those shapes and functions described in the first and second embodiments.
- the configuration of the third information layer 15, the second information layer 14, and the first information layer 13 will be described in detail.
- the first information layer 13 and the second information layer 14 correspond to the Lth information layer of the optical information recording medium of the present invention.
- the optical information recording medium of the present embodiment when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- the third information layer 15 includes a fifth dielectric layer 502, a fifth interface layer 503, a third recording layer 504, a sixth dielectric layer 506, and a third reflective layer 508 that are arranged in order from the incident side of the laser beam 1.
- the fifth interface layer 503 may be provided as necessary, and is not necessarily provided.
- a sixth interface layer 505 (the sixth interface layer is not shown in FIG. 3) between the third recording layer 504 and the sixth dielectric layer 506, but in this specification, for the sake of convenience, the “sixth interface layer 505 is used. ”). May be further provided.
- an interface layer 507 is provided between the sixth dielectric layer 506 and the third reflective layer 508 (the interface layer is not shown in FIG.
- Information recording / reproduction of the third information layer 15 is performed by the laser beam 1 transmitted through the transparent layer 2, the first information layer 13, the intermediate layer 3, the second information layer 14, and the intermediate layer 5.
- Reference numeral 508 denotes the third dielectric layer 202, the third interface layer 203, the second recording layer 204, the fourth interface layer 205, the fourth dielectric layer 206, and the interface layer 207 of the second information layer 11 of Embodiment 2, respectively.
- the second reflective layer 208 can be used. Also, their shapes and functions are the same as those shapes and functions described in the second embodiment.
- the reflectance R c3 (%) when the third recording layer 504 is in the crystalline phase and the reflectance R a3 (%) when the third recording layer 504 is in the amorphous phase are R a3 ⁇ R c3 is preferably satisfied.
- the reflectance becomes high in an initial state where no information is recorded, and the recording / reproducing operation can be performed stably.
- R c3 and R a3 satisfy 1 ⁇ R a3 ⁇ 12 and 16 ⁇ R c3 ⁇ 48 so that the reflectance difference (R c3 ⁇ R a3 ) is increased to obtain good recording / reproduction characteristics. It is more preferable that 1 ⁇ R a3 ⁇ 6 and 16 ⁇ R c3 ⁇ 32.
- the second information layer 14 includes a third dielectric layer 402, a third interface layer 403, a second recording layer 404, a fourth dielectric layer 406, a second reflective layer 408, which are arranged in order from the incident side of the laser beam 1. And a second transmittance adjustment layer 409.
- the third interface layer 403 may be provided as necessary, and is not necessarily provided.
- a fourth interface layer 405 may be provided between the second recording layer 404 and the fourth dielectric layer 406 (the fourth interface layer is not shown in FIG. 4 interface layer 405 ").
- Information recording / reproduction of the second information layer 14 is performed by the laser beam 1 transmitted through the transparent layer 2, the first information layer 13, and the intermediate layer 3.
- the transmittance adjustment layer 409 includes the first dielectric layer 102, the first interface layer 103, the first recording layer 104, the second interface layer 105, and the second dielectric layer 106 of the first information layer 10 of the first embodiment, respectively.
- the first reflective layer 108 and the transmittance adjusting layer 109 can be used using the same material. Also, their shapes and functions are the same as those shapes and functions described in the first embodiment.
- the transmittance T c2 (%) when the second recording layer 404 is in a crystalline phase and the transmittance T a2 (%) when the second recording layer 404 is in an amorphous phase are In order to allow the laser light amount necessary for recording / reproduction to reach the information layer on the side farther than the second information layer 14 from the incident side of the laser beam 1, it is preferable to satisfy 50 ⁇ T c2 and 50 ⁇ T a2. 55 ⁇ T c2 and 55 ⁇ T a2 are more preferable.
- the transmittances T c2 and T a2 of the second information layer 14 preferably satisfy ⁇ 5 ⁇ (T c2 ⁇ T a2 ) ⁇ 5, and more preferably satisfy ⁇ 3 ⁇ (T c2 ⁇ T a2 ) ⁇ 3. preferable.
- T c2 and T a2 satisfy this condition, the information recording layer 404 of the second information layer 14 is recorded and reproduced when the information layer on the side farther than the second information layer 14 from the incident side of the laser beam 1 is recorded.
- the influence of the change in transmittance depending on the state is small, and good recording / reproducing characteristics can be obtained.
- the reflectance R c2 (%) when the second recording layer 404 is in a crystalline phase and the reflectance R a2 (%) when the second recording layer 404 is in an amorphous phase are R a2 ⁇ R c2 is preferably satisfied.
- the reflectance becomes high in an initial state where no information is recorded, and the recording / reproducing operation can be performed stably.
- R c2 and R a2 are 0.3 ⁇ R a2 ⁇ 4 and 5 ⁇ R c2 ⁇ 15 so that the reflectance difference (R c2 ⁇ R a2 ) is increased to obtain good recording / reproduction characteristics.
- 0.3 ⁇ R a2 ⁇ 3 and 5 ⁇ R c2 ⁇ 9 are satisfied.
- the first information layer 13 includes a first dielectric layer 302, a first interface layer 303, a first recording layer 304, a second dielectric layer 306, a first reflective layer 308, which are arranged in order from the incident side of the laser beam 1. And a first transmittance adjusting layer 309.
- the first interface layer 303 may be provided as necessary, and is not necessarily provided.
- a second interface layer 305 may be provided between the first recording layer 304 and the second dielectric layer 306 (the second interface layer is not shown in FIG. 3, but in this specification “ This is described as “second interface layer 305”.
- the transmittance adjustment layer 309 includes the first dielectric layer 102, the first interface layer 103, the first recording layer 104, the second interface layer 105, and the second dielectric layer 106 of the first information layer 10 of Embodiment 1, respectively.
- the first reflective layer 108 and the transmittance adjusting layer 109 can be used using the same material. Also, their shapes and functions are the same as those shapes and functions described in the first embodiment.
- the transmittance T c1 (%) when the first recording layer 304 is in the crystalline phase and the transmittance T a1 (%) when the first recording layer 304 is in the amorphous phase are In order to allow the laser light amount necessary for recording / reproduction to reach the information layer farther from the incident side of the laser beam 1 than the first information layer 13, it is preferable to satisfy 50 ⁇ T c1 and 50 ⁇ T a1. 55 ⁇ T c1 and 55 ⁇ T a1 are more preferable.
- the transmittances T c1 and T a1 of the first information layer 13 preferably satisfy ⁇ 5 ⁇ (T c1 ⁇ T a1 ) ⁇ 5, and more preferably satisfy ⁇ 3 ⁇ (T c1 ⁇ T a1 ) ⁇ 3. preferable.
- T c1 and T a1 satisfy this condition, the information recording layer 304 of the first information layer 13 is recorded / reproduced in the information layer on the side farther than the first information layer 13 from the incident side of the laser beam 1.
- the influence of the change in transmittance depending on the state is small, and good recording / reproducing characteristics can be obtained.
- the reflectance R c1 (%) when the first recording layer 304 is in the crystalline phase and the reflectance R a1 (%) when the first recording layer 304 is in the amorphous phase are R a1 ⁇ R c1 is preferably satisfied.
- the reflectance becomes high in an initial state where no information is recorded, and the recording / reproducing operation can be performed stably.
- R c1 and R a1 are 0.1 ⁇ R a1 ⁇ 1 and 1.5 ⁇ R c1 so that the reflectance difference (R c1 ⁇ R a1 ) is increased to obtain good recording / reproduction characteristics. It is preferable to satisfy ⁇ 5, and it is more preferable to satisfy 0.1 ⁇ R a1 ⁇ 0.7 and 1.5 ⁇ R c1 ⁇ 3.
- the effective amount of reflected light from the third information layer 15 can be adjusted (for example, the effective reflectance is 2%).
- the optical information recording medium 16 can be manufactured by the method described below.
- a substrate 8 (having a thickness of, for example, 1.1 mm) is prepared and placed in a film forming apparatus.
- a third information layer is formed on the substrate 8. Specifically, first, the third reflective layer 508, the sixth dielectric layer 506, the third recording layer 504, the fifth interface layer 503, and the fifth dielectric layer 502 are formed in this order on the substrate 8. To do. At this time, an interface layer 507 may be formed between the third reflective layer 508 and the sixth dielectric layer 506 as necessary. Furthermore, a sixth interface layer 505 may be formed between the sixth dielectric layer 506 and the third recording layer 504 as necessary. Further, if not necessary, the fifth interface layer 503 may not be formed.
- Each of these layers includes the second reflective layer 208, the interface layer 207, the fourth dielectric layer 206, the fourth interface layer 205, the second recording layer 204, the second recording layer 204, and the second information layer 11 described in the second embodiment.
- the third interface layer 203 and the third dielectric layer 202 can be formed by the same method.
- the third information layer 15 is formed.
- the intermediate layer 5 (having a thickness of, for example, 15 ⁇ m) is formed on the fifth dielectric layer 502 of the third information layer 15.
- the intermediate layer 5 is formed by applying a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin on the fifth dielectric layer 502, spin-coating, and then curing the resin. it can.
- the intermediate layer 5 is provided with a guide groove for the laser beam 1
- the substrate (mold) on which the groove is formed is brought into close contact with the resin before curing, the resin is cured, and then the substrate (mold) is mounted.
- a guide groove can be formed by peeling.
- a method for forming the intermediate layer not only the above-described spin coating method but also a printing technique such as a screen method or an ink jet method can be applied to a fine processing technique.
- the third recording layer 504 can be crystallized by irradiation with a laser beam.
- the second information layer 14 is formed on the intermediate layer 5. Specifically, first, on the intermediate layer 5, the second transmittance adjustment layer 409, the second reflection layer 408, the fourth dielectric layer 406, the second recording layer 404, the third interface layer 403, and the third dielectric
- the body layer 402 is formed in this order.
- a fourth interface layer 405 may be formed between the fourth dielectric layer 406 and the second recording layer 404 as necessary.
- the third interface layer 403 may not be formed if unnecessary.
- These layers are the transmittance adjustment layer 109, the first reflection layer 108, the second dielectric layer 106, the second interface layer 105, and the first recording layer 104 of the first information layer 10 described in the first embodiment.
- the first interface layer 103 and the first dielectric layer 102 can be formed by the same method.
- the second information layer 14 is formed.
- the intermediate layer 3 (having a thickness of, for example, 25 ⁇ m) is formed on the third dielectric layer 402 of the second information layer 14 by the same method as that for the intermediate layer 5 described above.
- An initialization step of crystallizing the entire surface of the second recording layer 404 and / or the third recording layer 504 as necessary after forming the third dielectric layer 402 or forming the intermediate layer 3. May be performed.
- the crystallization of the second recording layer 404 and / or the third recording layer 504 can be performed by irradiation with a laser beam.
- the first information layer 13 is formed on the intermediate layer 3. Specifically, first, on the intermediate layer 3, the first transmittance adjustment layer 309, the first reflection layer 308, the second dielectric layer 306, the first recording layer 304, the first interface layer 303, and the first dielectric The body layer 302 is formed in this order. At this time, a second interface layer 305 may be formed between the second dielectric layer 306 and the first recording layer 304 as necessary. Further, if not necessary, the first interface layer 303 may not be formed. These layers are the transmittance adjustment layer 109, the first reflection layer 108, the second dielectric layer 106, the second interface layer 105, and the first recording layer 104 of the first information layer 10 described in the first embodiment. The first interface layer 103 and the first dielectric layer 102 can be formed by the same method.
- the first information layer 13 is formed.
- the transparent layer 2 (with a thickness of 60 ⁇ m, for example) is formed on the first dielectric layer 302.
- the transparent layer 2 can be formed by the method described in the first embodiment.
- the entire surface of the first recording layer 304, the second recording layer 404, and / or the third recording layer 504 is formed as necessary.
- An initialization step for crystallizing the substrate may be performed.
- the crystallization of the first recording layer 304, the second recording layer 404, and / or the third recording layer 504 can be performed by irradiation with a laser beam.
- the optical information recording medium 16 can be manufactured.
- a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- the optical information recording medium 21 is a four-layer optical information recording medium capable of recording and reproducing information by irradiation with the laser beam 1 from one side.
- the optical information recording medium 21 includes a fourth information layer 20, an intermediate layer 6, a third information layer 19, an intermediate layer 5, a second information layer 18, an intermediate layer 3, and a first information layer, which are sequentially stacked on the substrate 8. 17 and the transparent layer 2.
- the substrate 8, the intermediate layers 3, 5, 6 and the transparent layer 2 can be formed using the same materials as those described in the first and second embodiments. Also, their shapes and functions are the same as those shapes and functions described in the first and second embodiments.
- the configuration of the fourth information layer 20, the third information layer 19, the second information layer 18, and the first information layer 17 will be described in detail.
- the first information layer 17, the second information layer 18, and the third information layer 19 correspond to the Lth information layer of the optical information recording medium of the present invention.
- the optical information recording medium of the present embodiment when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- the fourth information layer 20 includes a seventh dielectric layer 902, a seventh interface layer 903, a fourth recording layer 904, an eighth dielectric layer 906, and a fourth reflective layer 908 arranged in order from the incident side of the laser beam 1.
- the seventh interface layer 903 may be provided as necessary, and is not necessarily provided.
- an eighth interface layer 905 may be provided between the fourth recording layer 904 and the eighth dielectric layer 906 (the eighth interface layer is not shown in FIG. 4, but in this specification “ This will be described as “eighth interface layer 905”).
- an interface layer 907 may be provided between the eighth dielectric layer 906 and the fourth reflective layer 908 (the interface layer is not shown in FIG. 4, but is referred to as “interface layer 907” for convenience in this specification). explain).
- information recording / reproduction passed through the transparent layer 2, the first information layer 17, the intermediate layer 3, the second information layer 18, the intermediate layer 5, the third information layer 19, and the intermediate layer 6. Performed by the laser beam 1.
- Reference numeral 908 denotes the third dielectric layer 202, the third interface layer 203, the second recording layer 204, the fourth interface layer 205, the fourth dielectric layer 206, and the interface layer 207 of the second information layer 11 of Embodiment 2, respectively.
- the second reflective layer 208 can be used. Also, their shapes and functions are the same as those shapes and functions described in the second embodiment.
- the reflectance R c4 (%) when the fourth recording layer 904 is a crystalline phase and the reflectance R a4 (%) when the fourth recording layer 904 is an amorphous phase are R a4 ⁇ R c4 is preferably satisfied.
- the reflectance becomes high in an initial state where no information is recorded, and the recording / reproducing operation can be performed stably.
- R c4 and R a4 satisfy 1 ⁇ R a4 ⁇ 12 and 16 ⁇ R c4 ⁇ 48 so that the reflectance difference (R c4 ⁇ R a4 ) is increased to obtain good recording / reproduction characteristics. It is preferable that 1 ⁇ R a4 ⁇ 6 and 16 ⁇ R c4 ⁇ 32.
- the third information layer 19 includes a fifth dielectric layer 802, a fifth interface layer 803, a third recording layer 804, a sixth dielectric layer 806, a third reflective layer 808, which are arranged in order from the incident side of the laser beam 1. And a third transmittance adjusting layer 809. Note that the fifth interface layer 803 may be provided as necessary, and is not necessarily provided. In addition, a sixth interface layer 805 may be provided between the third recording layer 804 and the sixth dielectric layer 806 (the sixth interface layer is not shown in FIG. 6 interface layer 805 "). Information recording / reproduction of the third information layer 19 is performed by the laser beam 1 transmitted through the transparent layer 2, the first information layer 17, the intermediate layer 3, the second information layer 18, and the intermediate layer 5.
- a fifth dielectric layer 802, a fifth interface layer 803, a third recording layer 804, a sixth interface layer 805, a sixth dielectric layer 806, a third reflective layer 808, and a third layer forming the third information layer 19 are formed.
- the transmittance adjustment layer 809 includes the first dielectric layer 102, the first interface layer 103, the first recording layer 104, the second interface layer 105, and the second dielectric layer 106 of the first information layer 10 of Embodiment 1, respectively.
- the first reflective layer 108 and the transmittance adjusting layer 109 can be used using the same material. Also, their shapes and functions are the same as those shapes and functions described in the first embodiment.
- the transmittance T c3 (%) when the third recording layer 804 is a crystalline phase and the transmittance T a3 (%) when the third recording layer 804 is an amorphous phase are In order to make the laser light quantity necessary for recording / reproduction reach the information layer farther than the third information layer 19 from the incident side of the laser beam 1, it is preferable to satisfy 55 ⁇ Tc3 and 55 ⁇ Ta3. 60 ⁇ T c3 and 60 ⁇ T a3 are more preferable.
- the transmittances T c3 and T a3 of the third information layer 19 preferably satisfy ⁇ 5 ⁇ (T c3 ⁇ T a3 ) ⁇ 5, and more preferably satisfy ⁇ 3 ⁇ (T c3 ⁇ T a3 ) ⁇ 3. preferable.
- T c3 and T a3 satisfy this condition, the information recording layer 804 of the third information layer 19 in the information recording layer 804 on the side farther than the third information layer 19 from the incident side of the laser beam 1 is recorded.
- the influence of the change in transmittance depending on the state is small, and good recording and reproduction characteristics can be obtained.
- the reflectance R c3 (%) when the third recording layer 804 is in the crystalline phase and the reflectance R a3 (%) when the third recording layer 804 is in the amorphous phase are R a3 ⁇ R c3 is preferably satisfied.
- the reflectance becomes high in an initial state where no information is recorded, and the recording / reproducing operation can be performed stably.
- R c3 and R a3 are 0.3 ⁇ R a3 ⁇ 4 and 5 ⁇ R c3 ⁇ 15 so that the reflectance difference (R c3 ⁇ R a3 ) is increased to obtain good recording / reproduction characteristics.
- 0.3 ⁇ R a3 ⁇ 3 and 5 ⁇ R c3 ⁇ 9 are more preferable.
- the second information layer 18 includes a third dielectric layer 702, a third interface phase 703, a second recording layer 704, a fourth dielectric layer 706, a second reflective layer 708, which are arranged in order from the incident side of the laser beam 1. And a second transmittance adjusting layer 709.
- the third interface layer 703 may be provided as necessary, and is not necessarily provided.
- a fourth interface layer 705 may be provided between the second recording layer 704 and the fourth dielectric layer 706 (the fourth interface layer is not shown in FIG. 4 interface layer 705 ").
- Information recording / reproduction with respect to the second information layer 18 is performed by the laser beam 1 transmitted through the transparent layer 2, the first information layer 17, and the intermediate layer 3.
- the transmittance adjustment layer 709 includes the first dielectric layer 102, the first interface layer 103, the first recording layer 104, the second interface layer 105, and the second dielectric layer 106 of the first information layer 10 of the first embodiment, respectively.
- the first reflective layer 108 and the transmittance adjusting layer 109 can be used using the same material. Also, their shapes and functions are the same as those shapes and functions described in the first embodiment.
- the transmittance T c2 (%) when the second recording layer 704 is a crystalline phase and the transmittance T a2 (%) when the second recording layer 704 is an amorphous phase are In order to cause the laser light amount necessary for recording / reproduction to reach the information layer on the side farther than the second information layer 18 from the incident side of the laser beam 1, it is preferable to satisfy 60 ⁇ T c2 and 60 ⁇ T a2. 65 ⁇ T c2 and 65 ⁇ T a2 are more preferable.
- the transmittances T c2 and T a2 of the second information layer 18 preferably satisfy ⁇ 5 ⁇ (T c2 ⁇ T a2 ) ⁇ 5, and more preferably satisfy ⁇ 3 ⁇ (T c2 ⁇ T a2 ) ⁇ 3. preferable.
- T c2 and T a2 satisfy this condition, the information recording layer 704 of the second information layer 18 in the second information layer 704 is recorded and reproduced at the time of recording and reproduction of the information layer on the side farther from the second information layer 18 from the incident side of the laser beam 1.
- the influence of the change in transmittance depending on the state is small, and good recording / reproducing characteristics can be obtained.
- the reflectance R c2 (%) when the second recording layer 704 is in the crystalline phase and the reflectance R a2 (%) when the second recording layer 704 is in the amorphous phase are R a2 ⁇ R c2 is preferably satisfied.
- R c2 and R a2 are 0.1 ⁇ R a2 ⁇ 1 and 1.5 ⁇ R c2 so that the reflectance difference (R c2 ⁇ R a2 ) is increased to obtain good recording / reproduction characteristics. It is preferable to satisfy ⁇ 6, and it is more preferable to satisfy 0.1 ⁇ R a2 ⁇ 0.7 and 1.5 ⁇ R c2 ⁇ 3.5.
- the first information layer 17 includes a first dielectric layer 602, a first interface layer 603, a first recording layer 604, a second dielectric layer 606, a first reflective layer 608, which are arranged in order from the incident side of the laser beam 1. And a first transmittance adjustment layer 609.
- the first interface layer 603 may be provided as necessary, and is not necessarily provided.
- a second interface layer 605 may be provided between the first recording layer 604 and the second dielectric layer 606 (the second interface layer is not shown in FIG. 4, but in this specification “ This will be described as “second interface layer 605”).
- the transmittance adjustment layer 609 includes the first dielectric layer 102, the first interface layer 103, the first recording layer 104, the second interface layer 105, and the second dielectric layer 106 of the first information layer 10 of Embodiment 1, respectively.
- the first reflective layer 108 and the transmittance adjusting layer 109 can be used using the same material. Also, their shapes and functions are the same as those shapes and functions described in the first embodiment.
- the transmittance T c1 (%) when the first recording layer 604 is a crystalline phase and the transmittance T a1 (%) when the first recording layer 604 is an amorphous phase are In order to allow the laser light amount necessary for recording / reproduction to reach the information layer farther from the first information layer 17 from the incident side of the laser beam 1, it is preferable to satisfy 60 ⁇ T c1 and 60 ⁇ T a1. 65 ⁇ T c1 and 65 ⁇ T a1 are more preferable.
- the transmittances T c1 and T a1 of the first information layer 17 preferably satisfy ⁇ 5 ⁇ (T c1 ⁇ T a1 ) ⁇ 5, and more preferably satisfy ⁇ 3 ⁇ (T c1 ⁇ T a1 ) ⁇ 3. preferable.
- T c1 and T a1 satisfy this condition, the information recording layer 604 of the first information layer 17 in the information recording layer 604 on the side farther from the first information layer 17 from the incident side of the laser beam 1
- the influence of the change in transmittance depending on the state is small, and good recording and reproduction characteristics can be obtained.
- the reflectance R c1 (%) when the first recording layer 604 is a crystalline phase and the reflectance R a1 (%) when the first recording layer 604 is an amorphous phase are R a1 ⁇ R c1 is preferably satisfied.
- R c1 and R a1 are 0.1 ⁇ R a1 ⁇ 0.8 and 1.2 ⁇ so that the reflectance difference (R c1 ⁇ R a1 ) is increased to obtain good recording / reproduction characteristics.
- R c1 ⁇ 3 is preferably satisfied, more preferably 0.1 ⁇ R a1 ⁇ 0.5 and 1.2 ⁇ R c1 ⁇ 2.
- the effective amount of reflected light from the first information layer 17, the second information layer 18, the third information layer 19, and the fourth information layer 20 can be matched (for example, the effective reflectance is 1.5%).
- the optical information recording medium 21 can be manufactured by the method described below.
- a substrate 8 (having a thickness of, for example, 1.1 mm) is prepared and placed in a film forming apparatus.
- a fourth information layer is formed on the substrate 8. Specifically, first, the fourth reflective layer 908, the eighth dielectric layer 906, the fourth recording layer 904, the seventh interface layer 903, and the seventh dielectric layer 902 are formed in this order on the substrate 8. . At this time, an interface layer 907 may be formed between the fourth reflective layer 908 and the eighth dielectric layer 906 as necessary. Furthermore, an eighth interface layer 905 may be formed between the eighth dielectric layer 906 and the fourth recording layer 904 as necessary. In addition, the seventh interface layer 903 is not necessarily formed if unnecessary.
- Each of these layers includes the second reflective layer 208, the interface layer 207, the fourth dielectric layer 206, the fourth interface layer 205, the second recording layer 204, the second recording layer 204, and the second information layer 11 described in the second embodiment.
- the third interface layer 203 and the third dielectric layer 202 can be formed by the same method.
- the fourth information layer 20 is formed.
- the intermediate layer 6 (thickness is, for example, 10 ⁇ m) is formed on the seventh dielectric layer 902 of the fourth information layer 20.
- the intermediate layer 6 is formed by applying a photocurable resin (particularly an acrylic ultraviolet curable resin) or a slow-acting thermosetting resin on the seventh dielectric layer 902 and spin-coating, and then curing the resin. Can be formed.
- the intermediate layer 6 includes the guide groove of the laser beam 1
- the substrate (mold) on which the groove is formed is brought into close contact with the resin before curing, the resin is cured, and then the substrate (mold) is mounted.
- a guide groove can be formed by peeling.
- a method for forming the intermediate layer not only the above-described spin coating method but also a printing technique such as a screen method or an ink jet method can be applied to a fine processing technique.
- an initialization process for crystallizing the entire surface of the fourth recording layer 904 may be performed as necessary.
- the fourth recording layer 904 can be crystallized by irradiation with a laser beam.
- the third information layer 19 is formed on the intermediate layer 6.
- the third transmittance adjusting layer 809, the third reflecting layer 808, the sixth dielectric layer 806, the third recording layer 804, the fifth interface layer 803, and the fifth dielectric are formed on the intermediate layer 6.
- Layer 802 is deposited in this order.
- a sixth interface layer 805 may be formed between the sixth dielectric layer 806 and the third recording layer 804 as necessary.
- the fifth interface layer 803 may not be formed if unnecessary.
- These layers are the transmittance adjustment layer 109, the first reflection layer 108, the second dielectric layer 106, the second interface layer 105, and the first recording layer 104 of the first information layer 10 described in the first embodiment.
- the first interface layer 103 and the first dielectric layer 102 can be formed by the same method.
- the third information layer 19 is formed.
- the intermediate layer 5 (having a thickness of, for example, 20 ⁇ m) is formed on the fifth dielectric layer 802 of the third information layer 19 by the same method as that for the intermediate layer 6 described above.
- the third recording layer 804 and / or the fourth recording layer 904 can be crystallized by irradiation with a laser beam.
- the second information layer 18 is formed on the intermediate layer 5. Specifically, first, on the intermediate layer 5, the second transmittance adjusting layer 709, the second reflecting layer 708, the fourth dielectric layer 706, the second recording layer 704, the third interface layer 703, and the third dielectric material. Layers 702 are deposited in this order. At this time, a fourth interface layer 705 may be formed between the fourth dielectric layer 706 and the second recording layer 704 as necessary. Further, the third interface layer 703 may not be formed if unnecessary. These layers are the transmittance adjustment layer 109, the first reflection layer 108, the second dielectric layer 106, the second interface layer 105, and the first recording layer 104 of the first information layer 10 described in the first embodiment. The first interface layer 103 and the first dielectric layer 102 can be formed by the same method.
- the second information layer 18 is formed.
- the intermediate layer 3 (thickness is, for example, 15 ⁇ m) is formed on the third dielectric layer 702 of the second information layer 18 by the same method as the above-described intermediate layer 6.
- the entire surface of the second recording layer 704, the third recording layer 804, and / or the fourth recording layer 904 is formed as necessary.
- An initialization step for crystallizing the substrate may be performed.
- the crystallization of the second recording layer 704, the third recording layer 804, and / or the fourth recording layer 904 can be performed by irradiation with a laser beam.
- the first information layer 17 is formed on the intermediate layer 3. Specifically, first, on the intermediate layer 3, the first transmittance adjustment layer 609, the first reflection layer 608, the second dielectric layer 606, the first recording layer 604, the first interface layer 603, and the first dielectric material. Layer 602 is deposited in this order. At this time, a second interface layer 605 may be formed between the second dielectric layer 606 and the first recording layer 604 as necessary. Further, if not necessary, the first interface layer 603 may not be formed. These layers are the transmittance adjustment layer 109, the first reflection layer 108, the second dielectric layer 106, the second interface layer 105, and the first recording layer 104 of the first information layer 10 described in the first embodiment. The first interface layer 103 and the first dielectric layer 102 can be formed by the same method.
- the first information layer 17 is formed.
- the transparent layer 2 (thickness is, for example, 55 ⁇ m) is formed on the first dielectric layer 602.
- the transparent layer 2 can be formed by the method described in the first embodiment.
- the first recording layer 604, the second recording layer 704, the third recording layer 804, and / or the first recording layer are formed as necessary.
- An initialization process for crystallizing the entire surface of the four recording layers 904 may be performed.
- the crystallization of the first recording layer 604, the second recording layer 704, the third recording layer 804, and / or the fourth recording layer 904 can be performed by irradiation with a laser beam.
- the optical information recording medium 21 can be manufactured.
- a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- Embodiment 5 As Embodiment 5, another example of the optical information recording medium of the present invention will be described.
- a partial cross-sectional view of the optical information recording medium 25 of Embodiment 5 is shown in FIG.
- the optical information recording medium 25 is a multilayer optical information recording medium capable of recording and reproducing information by irradiating the laser beam 1 from one side, like the optical information recording medium 9 of the first embodiment.
- the optical information recording medium 25 includes (N ⁇ 1) information layers including the first information layer 10, the second information layer 4,... Sequentially stacked on the substrate 22 via the intermediate layers 3, 5, and the like.
- the Nth information layer 7 laminated on the substrate 24 is in close contact with the intermediate layer 23.
- the first information layer 10 corresponds to the Lth information layer of the optical information recording medium of the present invention.
- the substrates 22 and 24 are transparent and disk-shaped substrates.
- a resin such as polycarbonate, amorphous polyolefin or PMMA, or glass can be used in the same manner as the substrate 8.
- a guide groove for guiding a laser beam may be formed on the surface of the substrate 22 on the first information layer 10 side and the surface of the substrate 24 on the Nth information layer 7 side as necessary.
- the surface of the substrate 22 opposite to the first information layer 10 side and the surface of the substrate 24 opposite to the Nth information layer 7 side are preferably smooth.
- polycarbonate is particularly useful because of its excellent transferability and mass productivity and low cost.
- the thicknesses of the substrate 22 and the substrate 24 are in the range of 0.3 mm to 0.9 mm so that sufficient strength is ensured and the thickness of the optical information recording medium 25 is about 1.2 mm. It is preferable.
- the intermediate layer 23 is made of a resin such as a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin, and preferably has a small light absorption with respect to the laser beam 1 to be used. It is preferable that the birefringence is small in the region.
- the thickness of the intermediate layer 23 is preferably in the range of 0.6 ⁇ m to 50 ⁇ m for the same reason as the intermediate layers 3 and 5.
- the optical information recording medium 25 can be manufactured by the method described below.
- the first information layer 10 is formed on the substrate 22 (thickness is, for example, 0.6 mm).
- the first information layer 10 is formed on the side where the guide groove is formed.
- the substrate 22 is placed in a film forming apparatus, and the first dielectric layer 102, the first interface layer 103, the first recording layer 104, the second dielectric layer 106, the first reflective layer 108, the transmittance.
- the adjustment layer 109 is sequentially stacked.
- the first interface layer 103 may not be formed if unnecessary.
- a second interface layer 105 may be formed between the first recording layer 104 and the second dielectric layer 106 as necessary.
- the method for forming each layer is the same as the method for forming each layer in the first embodiment.
- (N-2) information layers (second information layer to (N-1) information layer) are sequentially stacked via an intermediate layer.
- the Nth information layer 7 is formed on the substrate 24 (thickness is, for example, 0.6 mm).
- the Nth information layer 7 is formed of a single layer film or a multilayer film, and each of these layers can be formed by sequentially sputtering a sputtering target as a material in the film forming apparatus as in the first embodiment.
- a substrate 22 on which the first information layer 10 is formed by applying a resin such as a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin on the information layer 7. It is advisable to harden the resin after spin-coating the film on the Nth information layer 7. It is also possible to apply an adhesive resin uniformly on the Nth information layer 7 in advance and make it adhere to the substrate 22.
- a resin such as a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin
- the first recording layer 104 can be crystallized by irradiation with a laser beam.
- the optical information recording medium 25 can be manufactured as described above. Note that although a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- the optical information recording medium 26 has a configuration in which the first information layer 10 is laminated on the substrate 22 and the second information layer 11 is laminated on the substrate 24, and these laminates are brought into close contact via the intermediate layer 23.
- the first information layer 10 corresponds to the Lth information layer of the optical information recording medium of the present invention.
- the optical information recording medium of the present embodiment when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- a guide groove for guiding the laser beam may be formed on the surface of the substrate 22 on the second reflective layer 208 side, if necessary.
- the surface of the substrate 22 opposite to the second reflective layer 208 side is preferably smooth.
- the optical information recording medium 26 can be manufactured by the method described below.
- the first information layer 10 is formed on the substrate 22 (thickness is, for example, 0.6 mm) by the same method as in the fifth embodiment.
- the first recording layer 104 can be crystallized by irradiation with a laser beam.
- the second information layer 11 is formed on the substrate 24 (thickness is, for example, 0.6 mm).
- the substrate 24 is disposed in the film forming apparatus, and the second reflective layer 208, the fourth dielectric layer 206, the second recording layer 204, the third interface layer 203, and the third dielectric layer 202 are sequentially stacked.
- the third interface layer 203 is not necessarily formed if unnecessary.
- a fourth interface layer 205 may be formed between the second recording layer 204 and the fourth dielectric layer 206 as necessary.
- an interface layer 207 may be formed between the second reflective layer 208 and the fourth dielectric layer 206 as necessary.
- the method for forming each layer is the same as the method for forming each layer in the second embodiment.
- an initialization process for crystallizing the entire surface of the second recording layer 204 may be performed as necessary.
- the second recording layer 204 can be crystallized by irradiation with a laser beam.
- the substrate 22 on which the first information layer 10 is laminated and the substrate 24 on which the second information layer 11 is laminated are bonded together using the intermediate layer 23.
- a resin such as a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin is applied on the first information layer 10 or the second information layer 11, and the substrate 24 is coated.
- the upper third dielectric layer 202 and the transmittance adjusting layer 109 on the substrate 22 are in close contact with each other and spin-coated, and then the resin is cured.
- an adhesive resin can be uniformly applied in advance on the first information layer 10 or the second information layer 11 so that the substrate 22 and the substrate 24 are brought into close contact with each other.
- an initialization step of crystallizing the entire surfaces of the second recording layer 204 and the first recording layer 104 may be performed as necessary. In this case, it is preferable to crystallize the second recording layer 204 first for the same reason as in the second embodiment.
- the optical information recording medium 26 can be manufactured as described above. Note that although a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- the optical information recording medium 27 is a three-layer optical information recording medium capable of recording and reproducing information by irradiating the laser beam 1 from one side, like the optical information recording medium 16 of the third embodiment.
- the first information layer 13 and the second information layer 14 are laminated on the substrate 22, the third information layer 15 is laminated on the substrate 24, and these laminated bodies are used as the intermediate layer 23. It is the structure stuck through.
- the first information layer 13 and the second information layer 14 correspond to the Lth information layer of the optical information recording medium of the present invention.
- the optical information recording medium of the present embodiment when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- the optical information recording medium 27 can be manufactured by the method described below.
- the first information layer 13 is formed on the substrate 22 (thickness is, for example, 0.6 mm).
- the first information layer 22 is formed on the side where the guide groove is formed.
- the substrate 22 is disposed in a film forming apparatus, and the first dielectric layer 302, the first interface layer 303, the first recording layer 304, the second dielectric layer 306, the first reflective layer 308, the first The transmittance adjusting layer 309 is sequentially stacked.
- the first interface layer 303 may not be formed if unnecessary.
- a second interface layer 305 may be formed between the first recording layer 304 and the second dielectric layer 306 as necessary.
- the method for forming each layer is the same as that for each layer in the third embodiment.
- the intermediate layer 3 is formed on the first transmittance adjusting layer 309 by the same method as in the third embodiment.
- an initialization process for crystallizing the entire surface of the first recording layer 304 may be performed as necessary.
- the first recording layer 304 can be crystallized by irradiating with a laser beam.
- the second information layer 14 is formed on the intermediate layer 3.
- the first information layer 13 and the intermediate layer 3 formed on the substrate 22 are placed in a film forming apparatus, and the third dielectric layer 402, the third interface layer 403, the second recording layer 404, A fourth dielectric layer 406, a second reflective layer 408, and a second transmittance adjustment layer 409 are sequentially stacked.
- the third interface layer 403 is not necessarily formed if unnecessary.
- a fourth interface layer 405 may be formed between the second recording layer 404 and the fourth dielectric layer 406 as necessary.
- the method for forming each layer is the same as that for each layer in the third embodiment.
- an initialization step of crystallizing the entire surface of the first recording layer 304 and / or the second recording layer 404 may be performed as necessary. Crystallization of the first recording layer 304 and / or the second recording layer 404 can be performed by irradiation with a laser beam.
- the third information layer 15 is formed on the substrate 24 (thickness is, for example, 0.6 mm).
- the substrate 24 is disposed in the film forming apparatus, and the third reflective layer 508, the sixth dielectric layer 506, the third recording layer 504, the fifth interface layer 503, and the fifth dielectric layer 502 are sequentially stacked.
- the fifth interface layer 503 is not necessarily formed if unnecessary.
- a sixth interface layer 505 may be formed between the third recording layer 504 and the sixth dielectric layer 506 as necessary.
- an interface layer 507 may be formed between the sixth dielectric layer 506 and the third reflective layer 508 as necessary.
- the method for forming each layer is the same as that for each layer in the third embodiment.
- an initialization step of crystallizing the entire surface of the third recording layer 504 may be performed as necessary.
- the third recording layer 504 can be crystallized by irradiation with a laser beam.
- the substrate 22 on which the first information layer 13, the intermediate layer 3, and the second information layer 14 are stacked and the substrate 24 on which the third information layer 15 is stacked are bonded together using the intermediate layer 23.
- a resin such as a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin is applied on the second information layer 14 or the third information layer 15, and then the substrate 22.
- the resin is preferably cured.
- an adhesive resin can be uniformly applied in advance on the second information layer 14 or the third information layer 15 to bring the substrate 22 and the substrate 24 into close contact with each other.
- an initialization step of crystallizing the entire surface of the third recording layer 504, the second recording layer 404, and / or the first recording layer 304 may be performed as necessary.
- the optical information recording medium 27 can be manufactured as described above. Note that although a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- FIG. 8 shows a partial sectional view of the optical information recording medium 28 according to the eighth embodiment.
- the optical information recording medium 28 is a four-layer optical information recording medium capable of recording and reproducing information by irradiating the laser beam 1 from one side, like the optical information recording medium 21 of the fourth embodiment.
- the optical information recording medium 28 is formed by laminating the first information layer 17 and the second information layer 18 on the substrate 22 and laminating the fourth information layer 20 and the third information layer 19 on the substrate 24.
- the laminated body is in close contact with the intermediate layer 23 interposed therebetween.
- the first information layer 17, the second information layer 18, and the third information layer 19 correspond to the Lth information layer of the optical information recording medium of the present invention.
- the optical information recording medium of the present embodiment when a plurality of layers having the same function are provided, for convenience of explanation, they are distinguished as first, second,... Sequentially from the incident side of the laser beam 1. To do.
- the optical information recording medium 28 can be manufactured by the method described below.
- the first information layer 17 is formed on the substrate 22 (thickness is, for example, 0.6 mm). At this time, if a guide groove for guiding the laser beam 1 is formed on the substrate 22, the first information layer 17 is formed on the side where the guide groove is formed.
- the substrate 22 is disposed in a film forming apparatus, and the first dielectric layer 602, the first interface layer 603, the first recording layer 604, the second dielectric layer 606, the first reflective layer 608, the first The transmittance adjusting layer 609 is sequentially stacked.
- the first interface layer 603 is not necessarily formed if unnecessary.
- a second interface layer 605 may be formed between the first recording layer 604 and the second dielectric layer 606 as necessary.
- the method for forming each layer is the same as that for each layer in the fourth embodiment.
- the intermediate layer 3 is formed on the first transmittance adjustment layer 609 by the same method as in the fourth embodiment.
- an initialization process for crystallizing the entire surface of the first recording layer 604 may be performed as necessary.
- the first recording layer 604 can be crystallized by irradiation with a laser beam.
- the second information layer 18 is formed on the intermediate layer 3.
- the first information layer 17 and the intermediate layer 3 formed on the substrate 22 are arranged in a film forming apparatus, and the third dielectric layer 702, the third interface layer 703, the second recording layer 704, A fourth dielectric layer 706, a second reflective layer 708, and a second transmittance adjustment layer 709 are sequentially stacked.
- the third interface layer 703 may not be formed if unnecessary.
- a fourth interface layer 705 may be formed between the second recording layer 704 and the fourth dielectric layer 706 as necessary.
- the method for forming each layer is the same as that for each layer in the fourth embodiment.
- an initialization step of crystallizing the entire surface of the first recording layer 604 and / or the second recording layer 704 may be performed as necessary. Crystallization of the first recording layer 604 and / or the second recording layer 704 can be performed by irradiation with a laser beam.
- the fourth information layer 20 is formed on the substrate 24 (thickness is, for example, 0.6 mm).
- the fourth information layer 20 is formed on the side where the guide groove is formed.
- the substrate 24 is disposed in the film forming apparatus, and the fourth reflective layer 908, the eighth dielectric layer 906, the fourth recording layer 904, the seventh interface layer 903, and the seventh dielectric layer 902 are sequentially stacked.
- the seventh interface layer 903 is not necessarily formed if unnecessary.
- an eighth interface layer 905 may be formed between the fourth recording layer 904 and the eighth dielectric layer 906 as necessary.
- an interface layer 907 may be formed between the eighth dielectric layer 906 and the fourth reflective layer 908 as necessary.
- the method for forming each layer is the same as that for each layer in the fourth embodiment.
- the intermediate layer 6 is formed on the seventh dielectric layer 902 by the same method as in the fourth embodiment.
- an initialization process for crystallizing the entire surface of the fourth recording layer 904 may be performed as necessary.
- the fourth recording layer 904 can be crystallized by irradiation with a laser beam.
- a third information layer 19 is formed on the intermediate layer 6.
- a substrate in which the fourth information layer 20 and the intermediate layer 6 are formed on the substrate 24 is placed in a film forming apparatus, and a third transmittance adjusting layer 809, a third reflecting layer 808, and a sixth dielectric layer are disposed.
- 806, a third recording layer 804, a fifth interface layer 803, and a fifth dielectric layer 802 are sequentially stacked.
- the fifth interface layer 803 is not necessarily formed if unnecessary.
- a sixth interface layer 805 may be formed between the third recording layer 804 and the sixth dielectric layer 806 as necessary.
- the method for forming each layer is the same as the method for forming each layer in the fourth embodiment.
- an initialization process for crystallizing the entire surface of the third recording layer 804 and / or the fourth recording layer 904 may be performed as necessary.
- the third recording layer 804 and / or the fourth recording layer 904 can be crystallized by irradiation with a laser beam.
- the substrate 22 on which the first information layer 17, the intermediate layer 3 and the second information layer 18 are stacked, and the substrate 24 on which the fourth information layer 20, the intermediate layer 6 and the third information layer 19 are stacked are combined into an intermediate layer. Bonding using 23.
- a resin such as a photocurable resin (particularly acrylic ultraviolet curable resin) or a slow-acting thermosetting resin is applied on the second information layer 18 or the third information layer 19, and the substrate 22 is coated. After the substrate 24 and the substrate 24 are brought into close contact with each other and spin-coated, the resin is preferably cured.
- an adhesive resin may be uniformly applied in advance on the second information layer 18 or the third information layer 19 so that the substrate 22 and the substrate 24 are brought into close contact with each other.
- an initialization step of crystallizing the entire surface of the fourth recording layer 904, the third recording layer 804, the second recording layer 704, and / or the first recording layer 604 may be performed as necessary.
- the optical information recording medium 28 can be manufactured as described above. Note that although a sputtering method is used as a method for forming each layer in this embodiment mode, the present invention is not limited to this, and a vacuum evaporation method, an ion plating method, a CVD method, an MBE method, or the like can also be used. is there.
- FIG. 9 schematically shows a partial configuration of the recording / reproducing apparatus 34 used in the recording / reproducing method of the optical information recording medium of the present invention.
- the recording / reproducing apparatus 34 shown in FIG. 9 includes a spindle motor 29 for rotating the optical information recording medium 33, a semiconductor laser 31, and an objective lens 30 that condenses the laser beam 1 emitted from the semiconductor laser 31. And an optical head 32.
- the optical information recording medium 33 is the optical information recording medium of Embodiments 1 to 8, and includes a plurality of information layers (for example, the first information layer 10 and the second information layer 11).
- the objective lens 30 condenses the laser beam 1 on the information layer.
- Information recording, erasing, and overwriting recording on an optical information recording medium are performed by changing the power of the laser beam 1 to high power peak power (P p (mW)) and low power bias power (P b (mW)). By modulating between and. By irradiating the laser beam 1 with the peak power, a local part of the recording layer is made into an amorphous phase, and the amorphous phase becomes a recording mark. Between the recording marks, a laser beam 1 having a bias power is irradiated to form a crystal phase (erased portion). In the case of irradiating the laser beam 1 having a peak power, a so-called multi-pulse formed by a pulse train is generally used.
- the multi-pulse may be binary-modulated only by the power level of peak power and bias power, or cooling power (P c (mW)) and bottom power (P B (mW)) lower than the bias power.
- ternary modulation or quaternary modulation may be performed with a power level in the range of 0 mW to peak power.
- the information signal is reproduced by reading a signal from the optical information recording medium obtained by irradiating the laser beam 1 having a reproduction power with a detector.
- the reproduction power (P r (mW)) is lower than the power levels of the peak power and the bias power, and the optical state of the recording mark is not affected by the irradiation of the laser beam 1 at the power level.
- the power is set so that a sufficient amount of reflected light for reproducing the recording mark can be obtained from the target information recording medium.
- the numerical aperture NA of the objective lens 30 is preferably in the range of 0.5 to 1.1 in order to adjust the spot diameter of the laser beam in the range of 0.4 ⁇ m to 0.7 ⁇ m, and preferably in the range of 0.6 to More preferably, it is within the range of 0.9.
- the wavelength of the laser beam 1 is preferably 450 nm or less (more preferably in the range of 350 nm to 450 nm).
- the linear velocity of the optical information recording medium when recording information is preferably in the range of 4 m / sec to 50 m / sec at which crystallization due to reproduction light hardly occurs and sufficient erasing performance can be obtained, and 9 m More preferably, it is within the range of 40 m / sec. It goes without saying that the wavelength, the numerical aperture of the objective lens, and the linear velocity not illustrated here may be used depending on the type of the optical information recording medium.
- the wavelength of the laser beam may be 650 to 670 nm.
- the laser beam 1 is focused on the first recording layer 104
- Information is recorded on the first recording layer 104 by the laser beam 1 transmitted through the transparent layer 2 (or the substrate 22).
- the reproduction is performed by detecting the laser beam 1 reflected by the first recording layer 104 and transmitted through the transparent layer 2 (or the substrate 22).
- the laser beam 1 is focused on the second recording layer 204, and the transparent layer 2 (or substrate 22), the first information layer 10, and the intermediate layer 3 (or intermediate layer).
- the information is recorded by the laser beam 1 transmitted through 23).
- the reproduction is performed by detecting the laser beam 1 reflected by the second recording layer 204 and transmitted through the intermediate layer 3 (or the intermediate layer 23), the first information layer 10 and the transparent layer 2 (or the substrate 22).
- guide grooves for guiding the laser beam 1 are formed in the substrate 8 and the intermediate layers 3, 5, and 6, information is recorded on a groove surface (groove) closer to the incident side of the laser beam 1. It may be performed, or it may be performed on a distant groove surface (land). Information may be recorded on both the groove and the land.
- the performance of the optical information recording medium can be evaluated as follows.
- the recording performance is that the laser beam 1 is power-modulated between 0 and P p (mW), and a random signal with a mark length of 0.149 ⁇ m (2T) to 0.596 ⁇ m (8T) is modulated by (1-7) modulation method.
- Recording can be performed by measuring the jitter (mark position error) between the front end and the rear end of the recording mark with a time interval analyzer. Note that the smaller the jitter value, the better the recording performance.
- P p and P b are determined so that the average value of jitter between the front ends and between the rear ends (average jitter) is minimized. The optimum P p at this time is defined as the recording sensitivity.
- the power of the laser beam 1 is modulated between 0 and P p (mW), and signals with mark lengths of 0.149 ⁇ m (2T) and 0.671 ⁇ m (9T) are alternately recorded 10 times in the same groove. Then, the difference between the signal amplitude of the 2T signal when the 2T signal is overwritten for the 11th time and the signal amplitude of the 2T signal when the 9T signal is overwritten thereafter is measured by a spectrum analyzer as the erasure rate of the 2T signal. Can be evaluated. Note that the larger the erasure rate, the better the erasing performance.
- the signal intensity of the laser beam 1 is power-modulated between 0 and P p (mW), and signals with mark lengths of 0.149 ⁇ m (2T) and 0.671 ⁇ m (9T) are alternately recorded 10 times in the same groove.
- the ratio of the signal amplitude (carrier level) to the noise level (noise level) at the frequency of the 2T signal when the 2T signal is overwritten is evaluated by measuring with a spectrum analyzer (CNR (Carrier to Noise Ratio)). it can.
- CNR Carrier to Noise Ratio
- the number of repeated rewrites is such that the laser beam 1 is power modulated between 0 and P p (mW), and a random signal with a mark length of 0.149 ⁇ m (2T) to 0.596 ⁇ m (8T) is continuously recorded in the same groove. Then, the jitter between the front end and the rear end at each recording rewrite count can be evaluated by measuring with a time interval analyzer.
- the upper limit value is the number of rewrites when the average jitter value between the front end and the rear end of the first time increases by 3%. Note that P p , P b , P c , and P B are determined so that the average jitter value becomes the smallest.
- the target of the present invention includes at least W.
- a dielectric layer (transmittance adjusting layer) containing W can be formed.
- the target of the present invention may further contain M1 (where M1 is at least one element selected from Ce, Nb and Ti), and M2 (where M2 is Ag, Bi, Mg, Mn, Y, And at least one element selected from Zn and Zr).
- M1 is at least one element selected from Ce, Nb and Ti
- M2 where M2 is Ag, Bi, Mg, Mn, Y, And at least one element selected from Zn and Zr.
- a transmittance adjusting layer containing W-M1, W-M2, or W-M1-M2 can be formed.
- a target containing O in addition to the above target can also be used.
- a target and introducing only a rare gas or a rare gas and a trace amount of a reactive gas (particularly oxygen gas) the optical information of the present invention as described in the first to eighth embodiments.
- a transmittance adjusting layer included in the recording medium can be formed.
- the target should have a high density (showing the powder filling rate, and the state in which the powder is filled without any gaps is defined as 100%) so as to perform higher-speed film formation and reduce the variation.
- the density is preferably 80% or more, more preferably 90% or more.
- a method for manufacturing a target including W and M1 will be described.
- a high-purity material W powder and a material M1 powder having a predetermined particle diameter are prepared, weighed and mixed so as to have a predetermined mixing ratio, and placed in a hot press apparatus. If necessary, the hot press apparatus is evacuated and held under a predetermined high pressure and high temperature condition for a predetermined time to sinter the mixed powder. By sufficiently mixing, the composition in the in-plane / thickness direction of the target becomes uniform. Further, by optimizing the conditions of pressure, temperature and time, the filling property is improved and a high-density target can be manufactured. In this way, a target containing W and M1 at a predetermined composition ratio is completed. After sintering, if necessary, solder such as In may be used to adhere to a copper plate having a smooth surface, for example. By carrying out like this, it can attach to a sputtering device and can be sputtered.
- a target containing W and M2 can be prepared by the above method by preparing a high-purity material W powder having a predetermined particle size and a material M2 powder.
- the target including W, M1, and M2 can be prepared by preparing a high-purity material W powder, a material M1 powder, and a material M2 powder having a predetermined particle size, and manufacturing the target by the above method. it can.
- a high-purity material W-M1 powder and a material W-M2 powder having a predetermined particle size may be prepared, or a high-purity material having a predetermined particle size.
- the powder of the material W and the powder of the material M1-M2 may be prepared, or the powder of the high-purity material W-M1-M2 having a predetermined particle diameter may be prepared.
- the target can also be produced by the above method.
- the target to be manufactured contains O
- a high-purity material WO powder having a predetermined particle size a material M1-O powder, a material M2-O powder, and a material W-M1-O
- Powder of material W-M2-O, and W-M1-M2-O can be prepared, and the target can be manufactured by the above method.
- the transmittance adjusting layer provided in the optical information recording medium of the present invention it is desirable to form a film using the above target and using a sputtering method.
- a mass-production film forming apparatus for stacking multilayer films has already been provided on the market, and there is an advantage that a thin film having a good film quality can be obtained relatively easily.
- FIG. 10 shows a state in which a film is formed using a sputtering apparatus.
- a vacuum pump (not shown) is connected to the vacuum vessel 35 through the exhaust port 36 so that the inside of the vacuum vessel 35 can be kept at a high vacuum.
- a gas with a constant flow rate can be supplied from the gas supply port 37.
- a substrate 39 (the substrate here is a base material for depositing a film) is placed on the anode 38. By grounding the vacuum vessel 35, the vacuum vessel 35 and the substrate 39 are kept at the anode.
- the sputtering target 40 is connected to a cathode 41 and connected to a power source 42 via a switch (not shown).
- a predetermined voltage between the anode 38 and the cathode 41 By applying a predetermined voltage between the anode 38 and the cathode 41, a thin film can be formed on the substrate 39 by the particles emitted from the sputtering target 40.
- Example 1 the relationship between the material of the transmittance adjusting layer in the present invention, the deposition rate of the transmittance adjusting layer, and the degree of vacuum in the deposition chamber and the deposition rate was examined. Specifically, a transmittance adjusting layer made of a different material was formed on the substrate, and the film formation rate was measured in a state where the degree of vacuum in the film formation chamber before film formation was different.
- the film formation rate was measured as follows. First, a polycarbonate substrate (diameter 120 mm, thickness 1.1 mm) was prepared as a substrate, and a glass substrate for measuring the film thickness (length 12 mm ⁇ width 18 mm, thickness 1.1 mm) was attached on the substrate. And the transmittance
- the film forming apparatus for sputtering the transmittance adjusting layer was provided with a sputtering target for forming the transmittance adjusting layer.
- the shape of the sputtering target is 100 mm in diameter and 6 mm in thickness.
- the transmittance adjusting layer was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 200 W.
- the film thickness of the transmittance adjusting layer formed on the glass substrate attached on the substrate was measured using a stylus type step gauge. From the measured film thickness and the time when the transmittance adjusting layer was formed, the film thickness formed per unit time, that is, the film formation speed was calculated.
- Table 1 shows the relationship between the material of the formed transmittance adjusting layer, the degree of vacuum in the deposition chamber, and the deposition rate of the transmittance adjusting layer.
- the film formation rate was normalized by setting the film formation rate of TiO 2 to 1 when the degree of vacuum in the film formation chamber before film formation was 1.3 ⁇ 10 ⁇ 4 Pa.
- the film forming speed is faster than when the TiO 2 film is formed, and the film is formed as the degree of vacuum in the film forming chamber before film formation deteriorates. It was found that the speed did not decrease. From this, it was found that WO 3 which is a material containing W and O is preferable as a material for the transmittance adjusting layer.
- Example 2 In Example 2, the optical information recording medium 12 of FIG. 2 was produced, and the material of the transmittance adjusting layer 109, the deposition rate of the transmittance adjusting layer 109, the stability of the deposition rate, the refractive index, and the first information The relationship between the transmittance (T c1 ) of the layer 10 and the moisture resistance of the first information layer 10 was examined.
- samples 2-1 to 2-27 of the optical information recording medium 12 including the first information layer 10 having a different material for the transmittance adjusting layer 109 are produced, and the film forming speed of the transmittance adjusting layer 109 is The stability of the deposition rate, the refractive index, the transmittance of the first information layer 10 and the moisture resistance of the first information layer 10 were confirmed.
- the sample was manufactured as follows. First, a polycarbonate substrate (diameter 120 mm, thickness 1.1 mm) on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) for guiding the laser beam 1 were formed was prepared as the substrate 8. On the polycarbonate substrate, an Ag—Pd—Cu layer (thickness: 80 nm) as the second reflective layer 208 and an (In 2 O 3 ) 50 (ZrO 2 ) 50 layer (thickness) as the fourth dielectric layer 206 are formed.
- the film forming apparatus for sputtering each of the above layers forms an Ag—Pd—Cu alloy sputtering target for forming the second reflective layer 208 and a fourth dielectric layer 206 (In 2 O 3 ) 50 (ZrO 2 ).
- a (ZnS) 80 (SiO 2 ) 20 sputtering target for forming the three dielectric layers 202 was provided.
- the shape of the sputtering target was 100 mm in diameter and 6 mm in thickness.
- the second reflective layer 208 was formed in an Ar gas atmosphere at a pressure of 0.2 Pa and using a DC power supply with an input power of 200 W.
- the fourth dielectric layer 206 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an input power of 200 W using an RF power source.
- the second recording layer 204 was formed in an Ar gas atmosphere, a pressure of 0.13 Pa, and a DC power source with an input power of 100 W.
- the third interface layer 203 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 200 W.
- the third dielectric layer 202 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an input power of 400 W using an RF power source.
- an acrylic ultraviolet curable resin is applied on the third dielectric layer 202, and a substrate on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) are formed is placed and brought into intimate contact with the substrate. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 3 having a thickness of 25 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the first information layer 10 side was obtained.
- a transmittance adjusting layer 109 (thickness: 20 nm), an Ag—Pd—Cu layer (thickness: 9 nm) as the first reflective layer 108, and Al 2 O as the second dielectric layer 106 are formed.
- the film forming apparatus for sputtering each of the above layers includes a sputtering target for forming the transmittance adjusting layer 109, an Ag—Pd—Cu alloy sputtering target for forming the first reflective layer 108, and a second dielectric layer 106, respectively.
- the Al 2 O 3 sputtering target to be formed and the second interface layer 105 are formed (SiO 2 ) 25 (In 2 O 3 ) 50 (ZrO 2 ) 25
- the In—Bi—Te alloy sputtering target and the first interface layer 103 are formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25
- the sputtering target and the first dielectric layer 102 are formed (ZnS) ) 80 (was equipped with a SiO 2) 20 sputtering target.
- the shape of the sputtering target was 100 mm in diameter and 6 mm in thickness.
- the transmittance adjustment layer 109 was formed in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole) at a pressure of 0.13 Pa and an input power of 200 W using an RF power source. .
- the first reflective layer 108 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power supply with an input power of 100 W.
- the second dielectric layer 106 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 400 W.
- the second interface layer 105 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 200 W.
- the first recording layer 104 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using a DC power source with an input power of 50 W.
- the first interface layer 103 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power supply with an input power of 200 W.
- the first dielectric layer 102 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 400 W.
- an acrylic ultraviolet curable resin is applied on the first dielectric layer 102 and rotated to form a uniform resin layer, and then the resin is cured by irradiating with ultraviolet rays, whereby a thickness of 75 ⁇ m is obtained.
- Transparent layer 2 was formed.
- an initialization process for crystallizing the second recording layer 204 and the first recording layer 104 with a laser beam was performed.
- a plurality of samples having different materials for the transmittance adjusting layer 109 were manufactured. These samples were used as samples for evaluating the transmittance and moisture resistance.
- the film formation rate was measured by the same method as that used in Example 1.
- the stability of the film formation rate was evaluated using the measurement result of the film formation rate.
- the stability of the film formation rate means that the rate of change of the film formation rate with respect to the degree of vacuum in the film formation chamber before film formation is small.
- a sample for measuring the refractive index of the transmittance adjusting layer 109 is obtained by attaching a quartz substrate (length 12 mm ⁇ width 18 mm, thickness 1.1 mm) for refractive index measurement to a polycarbonate substrate, and attaching the quartz substrate. On the attached polycarbonate substrate, it prepared by forming into a film the material used as the transmittance
- the reflectances (R c1 , R c2 ) was measured.
- the wavelength of the laser beam 1 was 405 nm
- the numerical aperture NA of the objective lens 30 was 0.85
- the linear velocity of the sample during measurement was 4.9 m / s.
- the reflectance was measured with a groove.
- the moisture resistance of the first information layer 10 is determined by accelerating the prepared sample under the conditions of a temperature of 85 ° C. and a relative humidity of 85% RH (relative humidityity), and observing the state after the test with an optical microscope. did.
- the material (film composition) of the transmittance adjustment layer 109 formed, the film formation speed of the transmittance adjustment layer 109, the stability of the film formation speed, the refractive index, the transmittance of the first information layer 10, and The moisture resistance is shown in (Table 2).
- the film formation rate was normalized with the film formation rate of TiO 2 when the degree of vacuum in the film formation chamber measured in Example 1 was 1.3 ⁇ 10 ⁇ 4 Pa.
- the rate of change of the film formation rate from a vacuum degree of 1.3 ⁇ 10 ⁇ 4 Pa to 8.0 ⁇ 10 ⁇ 4 Pa in the film formation chamber before film formation is less than 5%.
- ⁇ 5% or more and less than 10% was evaluated as ⁇ , and 10% or more as X.
- moisture resistance a case where corrosion / peeling did not occur until after 200 hr acceleration under conditions of temperature 85 ° C. and relative humidity 85% RH, corrosion / peeling occurred after 200 hr acceleration, but after 100 hr acceleration The case where no corrosion occurred was indicated by ⁇ , and the case where corrosion / peeling occurred after 100 hr acceleration was indicated by ⁇ .
- the transmittance is 44% or more and the stability of the film formation rate and the moisture resistance are both ⁇
- A the transmittance is less than 44%, or the stability of the film formation rate or the moisture resistance is ⁇ .
- the case where there was a determination was B, the case where the stability of the film formation rate and the moisture resistance were both ⁇ , the case C, and the case where there was an X determination based on the stability of the film formation rate or the moisture resistance.
- the transmittance adjusting layer 109 is a sample 2-1 containing W and O, and the transmittance adjusting layer 109 is the above formula (1) (W a1 M1 b1 O 100-a1-b1 (atomic%) (where a1 and b1 are Samples 2-2 to 2-5, 2-7 to 2-10, and the transmittance adjustment layer 109 represented by 0 ⁇ a1 ⁇ 30 and 0 ⁇ b1 ⁇ 29) are represented by the above formula (3) ( Samples 2-11 to 2-14 represented by W a2 M2 b2 O 100-a2-b2 (atomic%) (where a2 and b2 satisfy 0 ⁇ a2 ⁇ 30 and 0 ⁇ b2 ⁇ 35)) 2-16 to 2-21, and the transmittance adjusting layer 109 has the above formula (4) (W a3 M1 b3 M2 c3 O 100-a3-b3-c3 (atomic%) (where a3, b3 and c3 are Samples 2-22 to 2-24 represented by 0
- the transmittance adjustment layer 109 is an oxide containing at least one element selected from W and Ce, Nb, Ti, and Bi. Samples 2-3 to 2-5, 2-7 to 2-10 , 2-11 to 2-14 and 2-22 to 2-24, the refractive index is as high as 2.5 or more, and the transmittance of the first information layer 10 can be increased to 45% or more. As particularly good. Further, the transmittance adjustment layer 109 is composed only of M1 (here, M1 is Ti and Nb) and O, and Sample 2-25 manufactured as a comparative example is obtained as W and M1 (here, M1 is Ti and Nb).
- Samples 2-26 and 2-27 produced as comparative examples in which the transmittance adjusting layer 109 does not contain W and consists only of M1 (here, M1 is Nb or Ce) and O are Nb 2 O 5 for the poor humidity resistance, in the case of CeO 2 stability of the film formation rate was bad.
- the film formation rate of the transmittance adjusting layer 109 is sufficiently high, and the film formation rate is stable.
- the refractive index was sufficiently high, and the moisture resistance was excellent.
- the composition of the transmittance adjusting layer 109 desirably includes at least W and O, and more preferably includes a material represented by Formula (1), Formula (3), and Formula (4). all right.
- Example 3 In Example 3, the optical information recording medium 16 of FIG. 3 was produced, and the material of the first transmittance adjusting layer 309, the deposition rate of the first transmittance adjusting layer 309, the stability of the deposition rate, and the refractive index. The relationship between the transmittance of the first information layer 13 and the moisture resistance of the first information layer 13 was examined. Specifically, samples 3-1 to 3-11 of the optical information recording medium 16 including the first information layer 13 made of a different material for the first transmittance adjustment layer 309 are produced, and the first transmittance adjustment layer 309 is manufactured. The film forming speed, the stability of the film forming speed, the refractive index, the transmittance of the first information layer 13 and the moisture resistance of the first information layer 13 were confirmed.
- the sample was manufactured as follows. First, a polycarbonate substrate (diameter 120 mm, thickness 1.1 mm) on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) for guiding the laser beam 1 were formed was prepared as the substrate 8. On the polycarbonate substrate, an Ag—Pd—Cu layer (thickness: 100 nm) as the third reflective layer 508 and (SiO 2 ) 25 (In 2 O 3 ) 50 (ZrO 2 ) as the sixth dielectric layer 506 are formed.
- the film forming apparatus for sputtering each of the above layers forms an Ag—Pd—Cu alloy sputtering target for forming the third reflective layer 508 and a sixth dielectric layer 506 (SiO 2 ) 25 (In 2 O 3 ) 50 (ZrO 2 ) 25 sputtering target and sixth interface layer 505 are deposited (Cr 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target and third recording layer 504 are deposited Sb—Te—Ge alloy sputtering A target and a fifth interface layer 503 are formed (Cr 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target, and a fifth dielectric layer 502 is formed (ZnS) 80 (SiO 2 ) 20 sputtering target. It was.
- the shape of the sputtering target is 200 mm in diameter and 6 mm in thickness.
- the third reflective layer 508 was formed in an Ar gas atmosphere at a pressure of 0.2 Pa and a DC power source with an input power of 2000 W.
- the sixth dielectric layer 506 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 2000 W.
- the sixth interface layer 505 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power source with an input power of 3000 W.
- the third recording layer 504 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using a pulsed DC power supply with an input power of 200 W.
- the fifth interface layer 503 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 3000 W.
- the fifth dielectric layer 502 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the fifth dielectric layer 502, and a substrate on which a guide groove (depth 20 nm, track pitch 0.32 ⁇ m) is formed is placed and brought into close contact, and rotated. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 5 having a thickness of 15 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the second information layer 14 side was obtained.
- the film forming apparatus for sputtering each layer described above forms the second transmittance adjusting layer 409 (WO 3 ) 50 (Bi 2 O 3 ) 50 sputtering target and Ag—Pd for forming the second reflective layer 408.
- -Cu alloy sputtering target fourth dielectric layer 406 is deposited (In 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target, fourth recording layer 404 is deposited Ge-Sn-In-Bi-Te alloy
- a sputtering target and a third interface layer 403 are formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25
- a sputtering target and a third dielectric layer 402 are formed (ZnS) 80 (SiO 2 ) It was equipped with 20 sputtering targets.
- the sputtering target has a diameter of 200 mm and a thickness of 6 mm.
- the second transmittance adjusting layer 409 is formed by using a pulsed DC power source with a pressure of 0.13 Pa in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole). Performed at 2000W.
- the second reflective layer 408 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power supply with an input power of 1000 W.
- the fourth dielectric layer 406 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 2000 W.
- the second recording layer 404 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and a pulsed DC power supply with an input power of 100 W.
- the third interface layer 403 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 3000 W.
- the third dielectric layer 402 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the third dielectric layer 402, and a substrate on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) are formed is placed and brought into intimate contact with the substrate. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 3 having a thickness of 25 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the first information layer 13 side was obtained.
- a first transmittance adjusting layer 309 (thickness: 15 nm), an Ag—Pd—Cu layer (thickness: 7 nm) as the first reflecting layer 308, and an Al as the second dielectric layer 306.
- the film forming apparatus for sputtering each of the above layers includes a sputtering target for forming the first transmittance adjusting layer 309, an Ag—Pd—Cu alloy sputtering target for forming the first reflective layer 308, and a second dielectric layer 306.
- the Al 2 O 3 sputtering target for forming a film the second interface layer 305 is formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 the sputtering target, and the first recording layer 304 is formed by Ge -Sn-In-Bi-Te alloy sputtering target, first interface layer 303 is formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 sputtering target, first dielectric layer 302 is formed (ZnS) 80 (SiO 2 ) 20 sputtering target.
- the shape of the sputtering target was 200 mm in diameter and 6 mm in thickness.
- the first transmittance adjustment layer 309 is formed by using a pulsed DC power source with a pressure of 0.13 Pa in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole). Performed at 2000W.
- the first reflective layer 308 was formed in an Ar gas atmosphere at a pressure of 0.2 Pa and a DC power source with an input power of 1000 W.
- the second dielectric layer 306 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 2000 W.
- the second interface layer 305 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power source with an input power of 3000 W.
- the first recording layer 304 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and a pulsed DC power supply with an input power of 100 W.
- the first interface layer 303 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power supply with an input power of 3000 W.
- the first dielectric layer 302 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the first dielectric layer 302 and rotated to form a uniform resin layer, and then the resin is cured by irradiating with ultraviolet rays, thereby having a thickness of 60 ⁇ m.
- Transparent layer 2 was formed.
- an initialization process for crystallizing the third recording layer 504, the second recording layer 404, and the first recording layer 304 with a laser beam was performed.
- a plurality of samples having different materials for the first transmittance adjusting layer 309 were manufactured. These samples were used as samples for evaluating the transmittance and moisture resistance.
- the film formation rate, the stability of the film formation rate, and the refractive index of the first transmittance adjustment layer 309 were measured by the same method as that used in Example 2.
- a sample prepared for evaluation of transmittance and moisture resistance is recorded using the recording / reproducing apparatus 34 in FIG.
- the reflectance (R c1 , R c2 , R c3 ) was measured.
- the wavelength of the laser beam 1 was 405 nm
- the numerical aperture NA of the objective lens 30 was 0.85
- the linear velocity of the sample during measurement was 4.9 m / s.
- the reflectance was measured with a groove.
- the moisture resistance of the first information layer 13 was determined by accelerating the prepared sample under conditions of a temperature of 85 ° C. and a relative humidity of 85% RH, and observing the state after the test with an optical microscope.
- the material (film composition) of the first transmittance adjusting layer 309 formed, the film forming speed of the first transmittance adjusting layer 309, the stability of the film forming speed, the refractive index, the first information layer 13 The transmittance (T c1 ) and moisture resistance are shown in (Table 3).
- the film formation rate was normalized by setting the film formation rate of TiO 2 at 1 when the degree of vacuum in the film formation chamber measured in Example 1 was 1.3 ⁇ 10 ⁇ 4 Pa.
- the rate of change of the film formation rate from 1.3 ⁇ 10 ⁇ 4 Pa to 8.0 ⁇ 10 ⁇ 4 Pa in the film formation chamber before film formation is less than 5%.
- ⁇ 5% or more and less than 10% was evaluated as ⁇ , and 10% or more as X.
- moisture resistance a case where corrosion / peeling did not occur until after 200 hr acceleration under conditions of temperature 85 ° C. and relative humidity 85% RH, corrosion / peeling occurred after 200 hr acceleration, but after 100 hr acceleration The case where no corrosion occurred was indicated by ⁇ , and the case where corrosion / peeling occurred after 100 hr acceleration was indicated by ⁇ .
- the transmittance is 50% or more and the stability and moisture resistance of the film formation are both “A”, the transmittance is less than 50%, or the stability of the film formation speed or the moisture resistance is ⁇ .
- the case where there was a determination was B, the case where the stability of the film formation rate and the moisture resistance were both ⁇ , the case C, and the case where there was an X determination based on the stability of the film formation rate or the moisture resistance.
- the first transmittance adjustment layer 309 contains W and O, and samples 3-1 to 3-11 represented by the above formula (1), the above formula (3), and the above formula (4) It was found that the film formation rate of the 1 transmittance adjusting layer 309 was high, the film formation rate was stable, and the refractive index was as high as 2.5 or more. Moreover, it turned out that the transmittance
- composition of the first transmittance adjustment layer 309 desirably includes at least W and O, and is preferably represented by, for example, Formula (1), Formula (3), and Formula (4). all right.
- Example 4 the optical information recording medium 21 of FIG. 4 was produced, and the material of the first transmittance adjusting layer 609, the deposition rate of the first transmittance adjusting layer 609, the stability of the deposition rate, and the refractive index.
- the relationship between the transmittance of the first information layer 17 and the moisture resistance of the first information layer 17 was examined. Specifically, samples 4-1 to 4-8 of the optical information recording medium 21 including the first information layer 17 having a different material for the first transmittance adjustment layer 609 are produced, and the first transmittance adjustment layer 609 is manufactured.
- the film forming speed, the stability of the film forming speed, the refractive index, the transmittance of the first information layer 17 and the moisture resistance of the first information layer 17 were confirmed.
- the sample was manufactured as follows. First, a polycarbonate substrate (diameter 120 mm, thickness 1.1 mm) on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) for guiding the laser beam 1 were formed was prepared as the substrate 8. On the polycarbonate substrate, an Ag—Pd—Cu layer (thickness: 100 nm) as the fourth reflective layer 908 and (SiO 2 ) 25 (In 2 O 3 ) 50 (ZrO 2 ) as the eighth dielectric layer 906 are formed.
- the film forming apparatus for sputtering each of the above layers forms an Ag—Pd—Cu alloy sputtering target for forming the fourth reflective layer 908 and an eighth dielectric layer 906 (SiO 2 ) 25 (In 2 O 3 ) 50 (ZrO 2 ) 25 sputtering target and eighth interface layer 905 are formed (Cr 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target and fourth recording layer 904 are formed Ge—Sn—In—Bi -Te alloy sputtering target, seventh interface layer 903 is deposited (Cr 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target, seventh dielectric layer 902 is deposited (ZnS) 80 (SiO 2 ) 20 sputtering Had a target.
- the shape of the sputtering target was 200 mm in diameter and 6 mm in thickness.
- the fourth reflective layer 908 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power supply with an input power of 2000 W.
- the eighth dielectric layer 906 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 2000 W.
- the eighth interface layer 905 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 3000 W.
- the fourth recording layer 904 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using a pulsed DC power supply with an input power of 200 W.
- the seventh interface layer 903 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 3000 W.
- the seventh dielectric layer 902 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an input power of 2500 W using an RF power source.
- an acrylic ultraviolet curable resin is applied on the seventh dielectric layer 902, and a substrate on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) are formed is placed and brought into close contact, and rotated. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 6 having a thickness of 10 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the third information layer 19 side was obtained.
- the film forming apparatus for sputtering each layer described above forms the third transmittance adjusting layer 809 (WO 3 ) 50 (Bi 2 O 3 ) 50 sputtering target and Ag—Pd for forming the third reflective layer 808.
- -Cu alloy sputtering target sixth dielectric layer 806 is deposited (In 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target, third recording layer 804 is deposited Sb-Ge alloy sputtering target, fifth interface (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 sputtering target for forming the layer 803, and (ZnS) 80 (SiO 2 ) 20 sputtering target for forming the fifth dielectric layer 802. It was.
- the sputtering target has a diameter of 200 mm and a thickness of 6 mm.
- the third transmittance adjustment layer 809 is formed by using a pulsed DC power source with a pressure of 0.13 Pa in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole). Performed at 2000W.
- the third reflective layer 808 was formed in an Ar gas atmosphere at a pressure of 0.2 Pa and a DC power source with an input power of 1000 W.
- the sixth dielectric layer 806 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an input power of 2000 W using an RF power source.
- the third recording layer 804 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and a pulsed DC power supply with an input power of 100 W.
- the fifth interface layer 803 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 3000 W.
- the fifth dielectric layer 802 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the fifth dielectric layer 802, and a substrate on which a guide groove (depth 20 nm, track pitch 0.32 ⁇ m) is formed is placed and brought into close contact, and rotated. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 5 having a thickness of 20 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the second information layer 18 side was obtained.
- Pd—Cu layer (thickness: 7 nm), (In 2 O 3 ) 50 (ZrO 2 ) 50 layer (thickness: 10 nm) as the fourth dielectric layer 706, and Sb 81 Te 13 Ge 6 as the second recording layer 704 Layer (thickness: 5 nm), (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 layer (thickness: 5 nm) as the third interface layer 703, and (ZnS) 80 as the third dielectric layer 702 (SiO 2 ) 20 layers (thickness: 40 nm) were sequentially laminated by a sputtering method.
- the film forming apparatus for sputtering each layer described above forms the second transmittance adjusting layer 709 (WO 3 ) 50 (TiO 2 ) 30 (Bi 2 O 3 ) 20 sputtering target and second reflecting layer 708.
- An Ag—Pd—Cu alloy sputtering target to be deposited and a fourth dielectric layer 706 are deposited (In 2 O 3 ) 50 (ZrO 2 ) 50 sputtering target and a second recording layer 704 is deposited Sb—Te—Ge
- An alloy sputtering target and a third interface layer 703 are formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25
- a sputtering target and a third dielectric layer 702 are formed (ZnS) 80 (SiO 2 ) It was equipped with 20 sputtering targets.
- the shape of the sputtering target was 200 mm in diameter and 6 mm in thickness.
- the second transmittance adjustment layer 709 is formed by using a pulsed DC power source with a pressure of 0.13 Pa in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole). Performed at 2000W.
- the second reflective layer 708 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power source with an input power of 1000 W.
- the fourth dielectric layer 706 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 2000 W.
- the second recording layer 704 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and a pulsed DC power supply with an input power of 100 W.
- the third interface layer 703 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 3000 W.
- the third dielectric layer 702 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the third dielectric layer 702, and a substrate on which a guide groove (depth 20 nm, track pitch 0.32 ⁇ m) is formed is placed and brought into close contact, and rotated. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 3 having a thickness of 15 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the first information layer 17 side was obtained.
- a first transmittance adjusting layer 609 (thickness: 15 nm), an Ag—Pd—Cu layer (thickness: 6 nm) as the first reflective layer 608, and an Al as the second dielectric layer 606.
- the film forming apparatus for sputtering each of the above layers includes a sputtering target for forming the first transmittance adjusting layer 609, an Ag—Pd—Cu alloy sputtering target for forming the first reflective layer 608, and a second dielectric layer 606.
- An Al 2 O 3 sputtering target for forming a film a second interface layer 605 is formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 a sputtering target, and a first recording layer 604 is formed by Ge -Sn-In-Bi-Te alloy sputtering target, first interface layer 603 is formed (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 sputtering target, first dielectric layer 602 is formed (ZnS) 80 (SiO 2 ) 20 sputtering target.
- the shape of the sputtering target was 200 mm in diameter and 6 mm in thickness.
- the first transmittance adjustment layer 609 is formed by using a pulsed DC power source with a pressure of 0.13 Pa in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole). Performed at 2000W.
- the first reflective layer 608 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power supply with an input power of 1000 W.
- the second dielectric layer 606 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 2000 W.
- the second interface layer 605 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power source with an input power of 3000 W.
- the first recording layer 604 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using a pulsed DC power supply with an input power of 100 W.
- the first interface layer 603 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power source with an input power of 3000 W.
- the first dielectric layer 602 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the first dielectric layer 602 and rotated to form a uniform resin layer, and then the resin is cured by irradiating with ultraviolet rays to obtain a thickness of 55 ⁇ m.
- Transparent layer 2 was formed.
- an initialization process for crystallizing the fourth recording layer 904, the third recording layer 804, the second recording layer 704, and the first recording layer 604 with a laser beam was performed.
- a plurality of samples having different materials for the first transmittance adjusting layer 609 were manufactured. These samples were used as samples for evaluating the transmittance and moisture resistance.
- the film formation rate, the stability of the film formation rate, and the refractive index of the first transmittance adjustment layer 609 were measured by the same method as that used in Example 2.
- the fourth information layer 20, the third information layer 19, the second information layer 18 of the optical information recording medium 21 are recorded using the recording / reproducing apparatus 34 of FIG. And the reflectance of the 1st information layer 17 was measured.
- the wavelength of the laser beam 1 was 405 nm
- the numerical aperture NA of the objective lens 30 was 0.85
- the linear velocity of the sample during measurement was 4.9 m / s.
- the reflectance was measured with a groove.
- the moisture resistance of the first information layer 17 was determined by accelerating the prepared sample under conditions of a temperature of 85 ° C. and a relative humidity of 85% RH, and observing the state after the test with an optical microscope.
- the material (film composition) of the first transmittance adjustment layer 609 formed, the film formation rate of the first transmittance adjustment layer 609, the stability of the film formation rate, the refractive index, the first information layer 17 The transmittance and moisture resistance are shown in (Table 4).
- the film formation rate was normalized by setting the film formation rate of TiO 2 at 1 when the degree of vacuum in the film formation chamber measured in Example 1 was 1.3 ⁇ 10 ⁇ 4 Pa.
- the rate of change of the film formation rate from 1.3 ⁇ 10 ⁇ 4 Pa to 8.0 ⁇ 10 ⁇ 4 Pa in the film formation chamber before film formation is less than 5%.
- ⁇ , 5% or more and less than 10% was evaluated as ⁇ , and 10% or more as X.
- the first transmittance adjustment layer 609 contains W and O, and samples 4-1 to 4-8 represented by the above formula (1), the above formula (3), and the above formula (4) It was found that the film formation rate of the 1 transmittance adjustment layer 609 was high, the film formation rate was stable, and the refractive index was as high as 2.6 or more. Moreover, it turned out that the transmittance
- composition of the first transmittance adjustment layer 609 desirably includes at least W and O, and is preferably represented by, for example, the formula (1), the formula (3), and the formula (4). It was.
- Example 5 In Example 5, the optical information recording medium 12 of FIG. 2 was produced, and the relationship between the film thickness of the transmittance adjusting layer 109 and the transmittance of the first information layer 10 was examined. Specifically, samples 5-1 to 5-8 of the optical information recording medium 12 including the first information layer 10 having different thicknesses of the transmittance adjusting layer 109 are produced, and the transmittance of the first information layer 10 is adjusted. confirmed.
- the sample was manufactured as follows. First, a polycarbonate substrate (diameter 120 mm, thickness 1.1 mm) on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) for guiding the laser beam 1 were formed was prepared as the substrate 8. On the polycarbonate substrate, an Ag—Pd—Cu layer (thickness: 80 nm) as the second reflective layer 208 and an (In 2 O 3 ) 50 (ZrO 2 ) 50 layer (thickness) as the fourth dielectric layer 206 are formed.
- the film forming apparatus for sputtering each of the above layers forms an Ag—Pd—Cu alloy sputtering target for forming the second reflective layer 208 and a fourth dielectric layer 206 (In 2 O 3 ) 50 (ZrO 2 ).
- a (ZnS) 80 (SiO 2 ) 20 sputtering target for forming the three dielectric layers 202 was provided.
- the shape of the sputtering target was 200 mm in diameter and 6 mm in thickness.
- the second reflective layer 208 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power supply with an input power of 2000 W.
- the fourth dielectric layer 206 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an input power of 2000 W using an RF power source.
- the second recording layer 204 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using a pulsed DC power source with an input power of 200 W.
- the third interface layer 203 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and using an RF power supply with an input power of 3000 W.
- the third dielectric layer 202 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an input power of 2500 W using an RF power source.
- an acrylic ultraviolet curable resin is applied on the third dielectric layer 202, and a substrate on which guide grooves (depth 20 nm, track pitch 0.32 ⁇ m) are formed is placed and brought into intimate contact with the substrate. As a result, a uniform resin layer was formed, and the substrate was peeled after the resin was cured. As a result, an intermediate layer 3 having a thickness of 25 ⁇ m in which a guide groove for guiding the laser beam 1 was formed on the first information layer 10 side was obtained.
- a (WO 3 ) 50 (Bi 2 O 3 ) 50 layer as the transmittance adjusting layer 109, an Ag—Pd—Cu layer (thickness: 9 nm) as the first reflective layer 108, and a second layer on the intermediate layer 3.
- the dielectric layer 106 is an Al 2 O 3 layer (thickness: 10 nm)
- the second interface layer 105 is a (SiO 2 ) 20 (In 2 O 3 ) 50 (ZrO 2 ) 30 layer (thickness: 5 nm)
- the first The recording layer 104 is a Ge 45 In 1 Bi 3 Te 51 layer (thickness: 7 nm)
- the first interface layer 103 is a (SiO 2 ) 25 (Cr 2 O 3 ) 50 (ZrO 2 ) 25 layer (thickness: 5 nm).
- (ZnS) 80 (SiO 2 ) 20 layers (thickness: 40 nm) were sequentially laminated as the first dielectric layer 102 by sputtering.
- the film forming apparatus for sputtering each of the above layers forms the transmittance adjusting layer 109 (WO 3 ) 50 (Bi 2 O 3 ) 50 sputtering target and Ag—Pd—Cu for forming the first reflective layer 108.
- the sputtering target has a diameter of 200 mm and a thickness of 6 mm.
- the transmittance adjusting layer 109 was formed in a mixed gas atmosphere of Ar and oxygen (oxygen gas at a ratio of 3% with respect to the whole) at a pressure of 0.13 Pa and an input power of 2000 W using an RF power source. .
- the first reflective layer 108 was formed in an Ar gas atmosphere with a pressure of 0.2 Pa and a DC power source with an input power of 1000 W.
- the second dielectric layer 106 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 2000 W.
- the second interface layer 105 was formed in an Ar gas atmosphere at a pressure of 0.13 Pa and an RF power supply with an input power of 2000 W.
- the first recording layer 104 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and a pulsed DC power supply with an input power of 100 W.
- the first interface layer 103 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an input power of 3000 W.
- the first dielectric layer 102 was formed in an Ar gas atmosphere with a pressure of 0.13 Pa and an RF power supply with an applied power of 2500 W.
- an acrylic ultraviolet curable resin is applied on the first dielectric layer 102 and rotated to form a uniform resin layer, and then the resin is cured by irradiating with ultraviolet rays, whereby a transparent film having a thickness of 75 ⁇ m is obtained.
- Layer 2 was formed. Thereafter, an initialization process for crystallizing the second recording layer 204 and the first recording layer 104 with a laser beam was performed. As described above, a plurality of samples with different thicknesses of the transmittance adjusting layer 109 were manufactured.
- the reflectance (R c1 , R c2 ) of the second information layer 11 and the first information layer 10 of the optical information recording medium 12 is used by using the recording / reproducing apparatus 34 of FIG. was measured.
- the wavelength of the laser beam 1 was 405 nm
- the numerical aperture NA of the objective lens 30 was 0.85
- the linear velocity of the sample during measurement was 4.9 m / s.
- the reflectance was measured with a groove.
- the first information layer 10 had a transmittance of 45% or more.
- the film thickness of the transmittance adjusting layer 109 is preferably in the range of 9 nm to 30 nm.
- Example 6 In Example 3, the signal intensity and the erasing performance of the first information layer 13 of the optical information recording media 16 of Samples 3-1 to 3-11 were measured using the recording / reproducing apparatus 34 of FIG. At this time, the wavelength of the laser beam 1 is 405 nm, the numerical aperture NA of the objective lens 30 is 0.85, the linear velocity of the sample during measurement is 9.8 m / s, and the shortest mark length (2T) is 0.149 ⁇ m. Recorded in the groove.
- the wavelength of the laser beam 1 is 405 nm
- NA of the objective lens 30 is 0.85
- the linear velocity of the sample during measurement is 9.8 m / s
- the shortest mark length (2T) is 0.149 ⁇ m. Recorded in the groove.
- Example 7 In Example 1 to Example 6, the transmittance adjustment layer 109, the first transmittance adjustment layer 309, the second transmittance adjustment layer 409, the first transmittance adjustment layer 609, the second transmittance adjustment layer 709, and / or The third transmittance adjustment layer 809 is formed using a mixed gas atmosphere with oxygen-rich Ar (for example, the whole) using a W, W-M1, W-M2, and / or W-M1-M2 alloy sputtering target not containing oxygen. A similar result was obtained when the film was formed with oxygen gas at a ratio of 50% with respect to the film.
- a mixed gas atmosphere with oxygen-rich Ar for example, the whole
- a multilayer optical information recording medium having a plurality of information layers can be efficiently manufactured, and a high-density rewritable type (for example, Blu-ray Disc Rewriteable (BD- RE), DVD-RAM, DVD-RW, + RW, etc.), write-once type (eg, Blu-ray Disc Recordable (BD-R), DVD-R, etc.), and read-only type (eg, Blu-ray Disc Read-) It is useful as an optical disk of Only (BD-ROM), DVD-ROM, etc.
- BD- RE Blu-ray Disc Rewriteable
- DVD-RAM DVD-RAM
- DVD-RW DVD-RW
- + RW etc.
- write-once type eg, Blu-ray Disc Recordable (BD-R), DVD-R, etc.
- read-only type eg, Blu-ray Disc Read- It is useful as an optical disk of Only (BD-ROM), DVD-ROM, etc.
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Abstract
Description
Wa1M1b1O100-a1-b1(原子%) (1)
(但し、a1及びb1は、0<a1<30、0<b1<29を満たす。)で表される材料を含んでもよい。式(1)で表される材料のうち、a1が10<a1<22、b1が5<b1<23を満たす材料が好適に用いられる。また、別の側面から表して、透過率調整層が、下記の式(2):
(WO3)100-c1(D1)c1(mol%) (2)
(但し、D1はCeO2、Nb2O5及びTiO2から選ばれる少なくとも一つの化合物であり、c1は、0<c1≦95を満たす。)で表される材料を含んでもよい。式(2)で表される材料のうち、c1が50≦c1≦80を満たす材料が好適に用いられる。
Wa2M2b2O100-a2-b2(原子%) (3)
(但し、a2及びb2は、0<a2<30、0<b2<35を満たす。)で表される材料を含んでもよい。
Wa3M1b3M2c3O100-a3-b3-c3(原子%) (4)
(但し、a3、b3及びc3は、0<a3<30、4<b3<16、3<c3<22を満たす。)で表される材料を含んでもよい。
Wa1M1b1O100-a1-b1(原子%) (5)
(但し、a1及びb1は、0<a1<30、0<b1<29を満たす。)で表される材料を含んでもよい。また、別の側面から表して、第1のターゲットが、下記の式(6):
(WO3)100-c1(D1)c1(mol%) (6)
(但し、D1はCeO2、Nb2O5及びTiO2から選ばれる少なくとも一つの化合物であり、c1は、0<c1≦95を満たす。)で表される材料を含んでもよい。このような第1のターゲットを用いることにより、透過率調整層の屈折率を高め、情報層の透過率をさらに高めた光学的情報記録媒体を作製することができる。
Wa3M1b3M2c3O100-a3-b3-c3(原子%) (7)
(但し、a3、b3及びc3は、0<a3<30、4<b3<16、3<c3<22を満たす。)で表される材料を含んでもよい。このようなターゲットを用いることにより、透過率調整層の屈折率及び安定性を高め、情報層の透過率が高く量産性の高い光学的情報記録媒体を作製することができる。
Wa2M2b2O100-a2-b2(原子%) (8)
(但し、a2及びb2は、0<a2<30、0<b2<35を満たす。)で表される材料を含んでもよい。なお、本発明における第2のターゲットは、上記各材料を含むターゲットであり、作製する透過率調整層の成分に応じて他の成分を含んでいてもよいが、実質的に上記各材料のみによって形成されていてもよい。なお、「実質的に」の意味は、第1のターゲットの場合と同様である。
実施の形態1として、本発明の光学的情報記録媒体の一例を説明する。実施の形態1の光学的情報記録媒体9の一部断面図を図1に示す。光学的情報記録媒体9は、片面からのレーザビーム1の照射によって情報の記録再生が可能な多層光学的情報記録媒体である。
Wa1M1b1O100-a1-b1(原子%) (1)
(但し、a1及びb1は、0<a1<30、0<b1<29を満たす。)で表される材料を含んでもよい。式(1)で表される材料のうち、a1が10<a1<22、b1が5<b1<23を満たす材料が好適に用いられる。また、別の側面から表して、透過率調整層109が、下記の式(2):
(WO3)100-c1(D1)c1(mol%) (2)
(但し、D1はCeO2、Nb2O5及びTiO2から選ばれる少なくとも一つの化合物であり、c1は、0<c1≦95を満たす。)で表される材料を含んでもよい。式(2)で表される材料のうち、c1が50≦c1≦80を満たす材料が好適に用いられる。
Wa2M2b2O100-a2-b2(原子%) (3)
(但し、a2及びb2は、0<a2<30、0<b2<35を満たす。)で表される材料を含んでもよい。また、透過率調整層109が、下記の式(4):
Wa3M1b3M2c3O100-a3-b3-c3(原子%) (4)
(但し、a3、b3及びc3は、0<a3<30、4<b3<16、3<c3<22を満たす。)で表される材料を含んでもよい。このことにより、透過率調整層109の安定性が高まり、第1情報層10の透過率が高く量産性の高い光学的情報記録媒体9を提供することができる。
実施の形態2として、実施の形態1の本発明の多層光学的情報記録媒体において、N=2、すなわち2個の情報層によって構成された光学的情報記録媒体の一例を説明する。実施の形態2の光学的情報記録媒体12の一部断面図を図2に示す。光学的情報記録媒体12は、片面からのレーザビーム1の照射によって情報の記録再生が可能な2層光学的情報記録媒体である。
実施の形態3として、実施の形態1の多層光学的情報記録媒体において、N=3、すなわち3個の情報層によって構成された光学的情報記録媒体の一例を説明する。実施の形態3の光学的情報記録媒体16の一部断面図を図3に示す。光学的情報記録媒体16は、片面からのレーザビーム1の照射によって情報の記録再生が可能な3層光学的情報記録媒体である。
実施の形態4として、実施の形態1の多層光学的情報記録媒体において、N=4、すなわち4個の情報層によって構成された光学的情報記録媒体の一例を説明する。実施の形態4の光学的情報記録媒体21の一部断面図を図4に示す。光学的情報記録媒体21は、片面からのレーザビーム1の照射によって情報の記録再生が可能な4層光学的情報記録媒体である。
実施の形態5として、本発明の光学的情報記録媒体の別の例を説明する。実施の形態5の光学的情報記録媒体25の一部断面図を図5に示す。光学的情報記録媒体25は、実施の形態1の光学的情報記録媒体9と同様、片面からのレーザビーム1の照射によって情報の記録再生が可能な多層光学的情報記録媒体である。
実施の形態6として、実施の形態5の本発明の多層光学的情報記録媒体において、N=2、すなわち2個の情報層によって構成された光学的情報記録媒体の一例を説明する。実施の形態6の光学的情報記録媒体26の一部断面図を図6に示す。光学的情報記録媒体26は、実施の形態2の光学的情報記録媒体12と同様、片面からのレーザビーム1の照射によって情報の記録再生が可能な2層光学的情報記録媒体である。
実施の形態7として、実施の形態5の多層光学的情報記録媒体において、N=3、すなわち3個の情報層によって構成された光学的情報記録媒体の一例を説明する。実施の形態7の光学的情報記録媒体27の一部断面図を図7に示す。光学的情報記録媒体27は、実施の形態3の光学的情報記録媒体16と同様、片面からのレーザビーム1の照射によって情報の記録再生が可能な3層光学的情報記録媒体である。
実施の形態8として、実施の形態5の多層光学的情報記録媒体において、N=4、すなわち4個の情報層によって構成された光学的情報記録媒体の一例を説明する。実施の形態8の光学的情報記録媒体28の一部断面図を図8に示す。光学的情報記録媒体28は、実施の形態4の光学的情報記録媒体21と同様、片面からのレーザビーム1の照射によって情報の記録再生が可能な4層光学的情報記録媒体である。
実施の形態9では、実施の形態1、2、3、4、5、6、7及び8として説明した本発明の光学的情報記録媒体の記録再生方法について説明する。
実施の形態10として、本発明のターゲットの実施の形態について、以下に説明する。
実施例1では、本発明における透過率調整層の材料と、当該透過率調整層の成膜速度、及び成膜室の真空度と成膜速度との関係を調べた。具体的には、基板上に異なる材料の透過率調整層を成膜し、成膜前の成膜室の真空度が異なる状態での成膜速度を測定した。
実施例2では、図2の光学的情報記録媒体12を作製し、透過率調整層109の材料と、透過率調整層109の成膜速度、成膜速度の安定性、屈折率、第1情報層10の透過率(Tc1)、及び第1情報層10の耐湿性との関係を調べた。具体的には、透過率調整層109の材料が異なる第1情報層10を含む光学的情報記録媒体12のサンプル2-1から2-27を作製し、透過率調整層109の成膜速度、成膜速度の安定性、屈折率、第1情報層10の透過率、及び第1情報層10の耐湿性を確認した。
実施例3では、図3の光学的情報記録媒体16を作製し、第1透過率調整層309の材料と、第1透過率調整層309の成膜速度、成膜速度の安定性、屈折率、第1情報層13の透過率、及び第1情報層13の耐湿性との関係を調べた。具体的には、第1透過率調整層309の材料が異なる第1情報層13を含む光学的情報記録媒体16のサンプル3-1から3-11を作製し、第1透過率調整層309の成膜速度、成膜速度の安定性、屈折率、第1情報層13の透過率、及び第1情報層13の耐湿性を確認した。
実施例4では、図4の光学的情報記録媒体21を作製し、第1透過率調整層609の材料と、第1透過率調整層609の成膜速度、成膜速度の安定性、屈折率、第1情報層17の透過率、及び第1情報層17の耐湿性との関係を調べた。具体的には、第1透過率調整層609の材料が異なる第1情報層17を含む光学的情報記録媒体21のサンプル4-1から4-8を作製し、第1透過率調整層609の成膜速度、成膜速度の安定性、屈折率、第1情報層17の透過率、及び第1情報層17の耐湿性を確認した。
実施例5では、図2の光学的情報記録媒体12を作製し、透過率調整層109の膜厚と、第1情報層10の透過率との関係を調べた。具体的には、透過率調整層109の膜厚が異なる第1情報層10を含む光学的情報記録媒体12のサンプル5-1から5-8を作製し、第1情報層10の透過率を確認した。
実施例3において、図9の記録再生装置34を用いて、サンプル3-1から3-11の光学的情報記録媒体16の第1情報層13の信号強度、及び消去性能を測定した。このとき、レーザビーム1の波長は405nm、対物レンズ30の開口数NAは0.85、測定時のサンプルの線速度は9.8m/s、最短マーク長(2T)は0.149μmとし、情報はグルーブに記録した。その結果、いずれのサンプルにおいても信号強度については42dB以上のCNR、消去性能については25dB以上の消去率が得られ、書き換え型の光学的情報記録媒体として使用可能であることを確認できた。
実施例1から実施例6において、透過率調整層109、第1透過率調整層309、第2透過率調整層409、第1透過率調整層609、第2透過率調整層709、及び/又は第3透過率調整層809を、酸素を含まないW、W-M1、W-M2、及び/又はW-M1-M2合金スパッタリングターゲットを用い、酸素を多く含むArとの混合ガス雰囲気(例えば全体に対して50%の割合の酸素ガス)で成膜したところ、同様の結果が得られた。
Claims (31)
- N個の情報層(Nは2以上の自然数)と、前記N個の情報層を光学的に互いに分離する中間層と、を備えた光学的情報記録媒体であって、
前記N個の情報層を、光入射側から順に第1情報層~第N情報層とした場合、前記N個の情報層に含まれる第L情報層(Lは、1≦L≦Nー1を満たす少なくとも1つの自然数)は、光の照射によって情報を記録し得る記録層と、反射層と、透過率調整層とを、光入射側からこの順で含んでおり、
前記透過率調整層が、タングステン(W)と酸素(O)とを含む、光学的情報記録媒体。 - 前記透過率調整層が、さらにM1(但し、M1はCe、Nb及びTiから選ばれる少なくとも一つの元素)を含む、請求項1に記載の光学的情報記録媒体。
- 前記透過率調整層が、下記の式(1):
Wa1M1b1O100-a1-b1(原子%) (1)
(但し、a1及びb1は、0<a1<30、0<b1<29を満たす。)で表される材料を含む、請求項2に記載の光学的情報記録媒体。 - 前記透過率調整層が、下記の式(2):
(WO3)100-c1(D1)c1(mol%) (2)
(但し、D1はCeO2、Nb2O5及びTiO2から選ばれる少なくとも一つの化合物であり、c1は、0<c1≦95を満たす。)で表される材料を含む、請求項2に記載の光学的情報記録媒体。 - 前記透過率調整層が、さらにM2(但し、M2はAg、Bi、Mg、Mn、Y、Zn及びZrから選ばれる少なくとも一つの元素)を含む、請求項1に記載の光学的情報記録媒体。
- 前記透過率調整層が、Ag2WO4、Bi2WO6、MgWO4、MnWO4、Y2W3O12、ZnWO4及びZrW2O8から選ばれる少なくとも一つの化合物を含む、請求項5に記載の光学的情報記録媒体。
- 前記透過率調整層が、下記の式(3):
Wa2M2b2O100-a2-b2(原子%) (3)
(但し、a2及びb2は、0<a2<30、0<b2<35を満たす。)で表される材料を含む、請求項5に記載の光学的情報記録媒体。 - 前記透過率調整層が、さらにM1(但し、M1はCe、Nb及びTiから選ばれる少なくとも一つの元素)とM2(但し、M2はAg、Bi、Mg、Mn、Y、Zn及びZrから選ばれる少なくとも一つの元素)とを含む、請求項1に記載の光学的情報記録媒体。
- 前記透過率調整層が、下記の式(4):
Wa3M1b3M2c3O100-a3-b3-c3(原子%) (4)
(但し、a3、b3及びc3は、0<a3<30、4<b3<16、3<c3<22を満たす。)で表される材料を含む、請求項8に記載の光学的情報記録媒体。 - 前記透過率調整層の膜厚d1(nm)が、9≦d1≦30の範囲である、請求項1に記載の光学的情報記録媒体。
- 前記記録層が、光の照射によって相変化を起こし得る、請求項1に記載の光学的情報記録媒体。
- 前記記録層が、Sb、Bi、In及びSnから選ばれる少なくとも一つの元素と、Geと、Teとを含み、
前記記録層におけるTeの含有量が50原子%以上である、請求項11に記載の光学的情報記録媒体。 - 前記記録層がSbを70原子%以上含む、請求項11に記載の光学的情報記録媒体。
- 前記記録層の膜厚が9nm以下である、請求項11に記載の光学的情報記録媒体。
- 前記反射層が、主としてAgを含む、請求項1に記載の光学的情報記録媒体。
- 前記反射層の膜厚が15nm以下である、請求項15に記載の光学的情報記録媒体。
- 前記中間層が、主としてアクリル系の樹脂を含む、請求項1に記載の光学的情報記録媒体。
- 請求項1に記載の光学的情報記録媒体を製造する方法であって、
前記透過率調整層を成膜する工程を少なくとも含み、
前記透過率調整層を成膜する工程において、少なくともタングステン(W)と酸素(O)とを含むターゲットを使用して前記透過率調整層を成膜する、又は、少なくともタングステン(W)を含むターゲットと少なくとも酸素(O)を含むガスとを使用して前記透過率調整層を成膜する、光学的情報記録媒体の製造方法。 - 前記ターゲットと前記透過率調整層が、さらにM1(但し、M1はCe、Nb及びTiから選ばれる少なくとも一つの元素)を含む、請求項18に記載の光学的情報記録媒体の製造方法。
- 前記ターゲットと前記透過率調整層が、さらにM2(但し、M2はAg、Bi、Mg、Mn、Y、Zn及びZrから選ばれる少なくとも一つの元素)を含む、請求項18に記載の光学的情報記録媒体の製造方法。
- 前記透過率調整層を成膜する工程よりも前に、前記中間層を形成する工程をさらに含む、請求項18に記載の光学的情報記録媒体の製造方法。
- 少なくとも、タングステン(W)とM1(但し、M1はCe、Nb及びTiから選ばれる少なくとも一つの元素)とを含む、ターゲット。
- 前記ターゲットが、さらにM2(但し、M2はAg、Bi、Mg、Mn、Y、Zn及びZrから選ばれる少なくとも一つの元素)を含む、請求項22に記載のターゲット。
- さらに酸素(O)を含む、請求項22に記載のターゲット。
- 前記ターゲットが、下記の式(5):
Wa1M1b1O100-a1-b1(原子%) (5)
(但し、a1及びb1は、0<a1<30、0<b1<29を満たす。)で表される材料を含む、請求項24に記載のターゲット。 - 前記ターゲットが、下記の式(6):
(WO3)100-c1(D1)c1(mol%) (6)
(但し、D1はCeO2、Nb2O5及びTiO2から選ばれる少なくとも一つの化合物であり、c1は、0<c1≦95を満たす。)で表される材料を含む、請求項24に記載のターゲット。 - 前記ターゲットが、さらにM2(但し、M2はAg、Bi、Mg、Mn、Y、Zn及びZrから選ばれる少なくとも一つの元素)を含む、請求項24に記載のターゲット。
- 前記ターゲットが、下記の式(7):
Wa3M1b3M2c3O100-a3-b3-c3(原子%) (7)
(但し、a3、b3及びc3は、0<a3<30、4<b3<16、3<c3<22を満たす。)で表される材料を含む、請求項27に記載のターゲット。 - 少なくとも、タングステン(W)とM2(但し、M2はAg、Bi、Mg、Mn、Y、Zn及びZrから選ばれる少なくとも一つの元素)とを含む、ターゲット。
- さらに酸素(O)を含む、請求項29に記載のターゲット。
- 前記ターゲットが、下記の式(8):
Wa2M2b2O100-a2-b2(原子%) (8)
(但し、a2及びb2は、0<a2<30、0<b2<35を満たす。)で表される材料を含む、請求項30に記載のターゲット。
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- 2009-01-27 US US12/593,693 patent/US8158233B2/en not_active Expired - Fee Related
- 2009-01-27 JP JP2009551429A patent/JPWO2009096165A1/ja not_active Withdrawn
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WO2016121367A1 (ja) * | 2015-01-27 | 2016-08-04 | デクセリアルズ株式会社 | Mn-Zn-W-O系スパッタリングターゲット及びその製造方法 |
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US10886112B2 (en) | 2015-01-27 | 2021-01-05 | Dexerials Corporation | Mn—Zn—W—O sputtering target and production method therefor |
JP2018016837A (ja) * | 2016-07-27 | 2018-02-01 | デクセリアルズ株式会社 | Mn−Zn−O系スパッタリングターゲット及びその製造方法 |
CN109337275A (zh) * | 2018-09-08 | 2019-02-15 | 南京理工大学 | 掺杂钨酸锰改性asa的红棕色复合材料及制备方法 |
CN109337275B (zh) * | 2018-09-08 | 2020-10-20 | 南京理工大学 | 掺杂钨酸锰改性asa的红棕色复合材料及制备方法 |
Also Published As
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JPWO2009096165A1 (ja) | 2011-05-26 |
US8158233B2 (en) | 2012-04-17 |
US20100151179A1 (en) | 2010-06-17 |
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