WO2009075257A1 - シリコン基板とその製造方法 - Google Patents

シリコン基板とその製造方法 Download PDF

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Publication number
WO2009075257A1
WO2009075257A1 PCT/JP2008/072311 JP2008072311W WO2009075257A1 WO 2009075257 A1 WO2009075257 A1 WO 2009075257A1 JP 2008072311 W JP2008072311 W JP 2008072311W WO 2009075257 A1 WO2009075257 A1 WO 2009075257A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon substrate
concentration
manufacturing
same
type silicon
Prior art date
Application number
PCT/JP2008/072311
Other languages
English (en)
French (fr)
Inventor
Shuichi Omote
Kazunari Kurita
Original Assignee
Sumco Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corporation filed Critical Sumco Corporation
Priority to JP2009545405A priority Critical patent/JPWO2009075257A1/ja
Publication of WO2009075257A1 publication Critical patent/WO2009075257A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14837—Frame-interline transfer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

この固体撮像素子用のシリコン基板では、ゲッタリング能力の確実性とその向上を図るために、Ｂがドープされたｐ型シリコン基板上に該ｐ型シリコン基板よりも低濃度のＢを有するシリコンエピタキシャル層を成膜した固体撮像素子用シリコン基板であって、前記ｐ型シリコン基板のＢ濃度が抵抗率１～３０ｍΩｃｍに相当する濃度、Ｃ濃度が０．１×１０１６～１５×１０１６ａｔｏｍｓ／ｃｍ３、酸素濃度が６．０×１０１７～１８．０×１０１７ａｔｏｍｓ／ｃｍ３とされた。
PCT/JP2008/072311 2007-12-11 2008-12-09 シリコン基板とその製造方法 WO2009075257A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009545405A JPWO2009075257A1 (ja) 2007-12-11 2008-12-09 シリコン基板とその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007320094 2007-12-11
JP2007-320094 2007-12-11

Publications (1)

Publication Number Publication Date
WO2009075257A1 true WO2009075257A1 (ja) 2009-06-18

Family

ID=40755499

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072311 WO2009075257A1 (ja) 2007-12-11 2008-12-09 シリコン基板とその製造方法

Country Status (3)

Country Link
JP (1) JPWO2009075257A1 (ja)
TW (1) TW200936825A (ja)
WO (1) WO2009075257A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015190026A1 (ja) * 2014-06-11 2015-12-17 ソニー株式会社 固体撮像素子、及びその製造方法
JP2019192808A (ja) * 2018-04-26 2019-10-31 学校法人東北学院 半導体装置
US10693023B2 (en) 2015-06-12 2020-06-23 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP7306536B1 (ja) 2022-06-14 2023-07-11 信越半導体株式会社 エピタキシャルウェーハの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11164746B2 (en) 2018-06-26 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices and a semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001322893A (ja) * 2000-05-09 2001-11-20 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
JP2002353146A (ja) * 2001-05-23 2002-12-06 Sony Corp 半導体基板の製造装置およびそれによる半導体基板を使用する半導体装置の製造方法
JP2007001847A (ja) * 2005-05-25 2007-01-11 Sumco Corp シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP2007149799A (ja) * 2005-11-25 2007-06-14 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法およびアニールウェーハ
JP2007273959A (ja) * 2006-03-06 2007-10-18 Matsushita Electric Ind Co Ltd 光検出素子及びその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050715A (ja) * 1996-07-29 1998-02-20 Sumitomo Sitix Corp シリコンウェーハとその製造方法
JP4656788B2 (ja) * 2001-11-19 2011-03-23 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JP2006073580A (ja) * 2004-08-31 2006-03-16 Sumco Corp シリコンエピタキシャルウェーハ及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001322893A (ja) * 2000-05-09 2001-11-20 Shin Etsu Handotai Co Ltd シリコンエピタキシャルウェーハの製造方法
JP2002353146A (ja) * 2001-05-23 2002-12-06 Sony Corp 半導体基板の製造装置およびそれによる半導体基板を使用する半導体装置の製造方法
JP2007001847A (ja) * 2005-05-25 2007-01-11 Sumco Corp シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP2007149799A (ja) * 2005-11-25 2007-06-14 Shin Etsu Handotai Co Ltd アニールウェーハの製造方法およびアニールウェーハ
JP2007273959A (ja) * 2006-03-06 2007-10-18 Matsushita Electric Ind Co Ltd 光検出素子及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015190026A1 (ja) * 2014-06-11 2015-12-17 ソニー株式会社 固体撮像素子、及びその製造方法
US10693023B2 (en) 2015-06-12 2020-06-23 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
US11355658B2 (en) 2015-06-12 2022-06-07 Canon Kabushiki Kaisha Imaging apparatus, method of manufacturing the same, and camera
JP2019192808A (ja) * 2018-04-26 2019-10-31 学校法人東北学院 半導体装置
JP7306536B1 (ja) 2022-06-14 2023-07-11 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP2023182155A (ja) * 2022-06-14 2023-12-26 信越半導体株式会社 エピタキシャルウェーハの製造方法

Also Published As

Publication number Publication date
TW200936825A (en) 2009-09-01
JPWO2009075257A1 (ja) 2011-04-28

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