WO2009075149A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2009075149A1
WO2009075149A1 PCT/JP2008/070287 JP2008070287W WO2009075149A1 WO 2009075149 A1 WO2009075149 A1 WO 2009075149A1 JP 2008070287 W JP2008070287 W JP 2008070287W WO 2009075149 A1 WO2009075149 A1 WO 2009075149A1
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WIPO (PCT)
Prior art keywords
breakdown voltage
holding portion
voltage holding
semiconductor device
semiconductor
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PCT/JP2008/070287
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English (en)
French (fr)
Inventor
Kosuke Bamba
Original Assignee
Toyota Jidosha Kabushiki Kaisha
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Application filed by Toyota Jidosha Kabushiki Kaisha filed Critical Toyota Jidosha Kabushiki Kaisha
Publication of WO2009075149A1 publication Critical patent/WO2009075149A1/ja

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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Abstract

　半導体装置が機能するのに必要な半導体構造を製造できる有効領域を拡大する技術が望まれている。本発明の半導体装置２では、その表面に形成されるパッド１２の少なくとも一部が、半導体基板４の表面の外周の内側を一巡する耐圧保持部６５上に形成されている。従来技術では耐圧保持部６５の内側に形成されていたパッド１２の少なくとも一部を耐圧保持部６５上に形成することで、耐圧保持部６５の内側のパッド領域１０の面積を縮小することができる。これにより、耐圧保持部６５の内側で半導体装置２が機能するのに必要な半導体構造を製造できる有効領域８を拡大することができる。また、パッド１２と耐圧保持部６５の間に導電膜を含む積層構造２０を形成することで、耐圧保持部６５に局所的な電界が印加されることがない。半導体装置２の耐圧特性が悪化することを防ぐことができる。
PCT/JP2008/070287 2007-12-10 2008-11-07 半導体装置 WO2009075149A1 (ja)

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JP2007-318471 2007-12-10
JP2007318471A JP2009141256A (ja) 2007-12-10 2007-12-10 半導体装置

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WO2009075149A1 true WO2009075149A1 (ja) 2009-06-18

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017147418A (ja) * 2016-02-19 2017-08-24 トヨタ自動車株式会社 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61278161A (ja) * 1985-06-04 1986-12-09 Tdk Corp 高耐圧半導体装置
JPH0241456U (ja) * 1988-09-09 1990-03-22
JPH02153570A (ja) * 1988-12-06 1990-06-13 Toshiba Corp 半導体素子
JP2002222952A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 高耐圧半導体装置
JP2007103792A (ja) * 2005-10-06 2007-04-19 Kawasaki Microelectronics Kk 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61278161A (ja) * 1985-06-04 1986-12-09 Tdk Corp 高耐圧半導体装置
JPH0241456U (ja) * 1988-09-09 1990-03-22
JPH02153570A (ja) * 1988-12-06 1990-06-13 Toshiba Corp 半導体素子
JP2002222952A (ja) * 2001-01-26 2002-08-09 Toshiba Corp 高耐圧半導体装置
JP2007103792A (ja) * 2005-10-06 2007-04-19 Kawasaki Microelectronics Kk 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017147418A (ja) * 2016-02-19 2017-08-24 トヨタ自動車株式会社 半導体装置

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