WO2009037930A1 - 気化装置、成膜装置、成膜方法、コンピュータプログラム及び記憶媒体 - Google Patents

気化装置、成膜装置、成膜方法、コンピュータプログラム及び記憶媒体 Download PDF

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Publication number
WO2009037930A1
WO2009037930A1 PCT/JP2008/064420 JP2008064420W WO2009037930A1 WO 2009037930 A1 WO2009037930 A1 WO 2009037930A1 JP 2008064420 W JP2008064420 W JP 2008064420W WO 2009037930 A1 WO2009037930 A1 WO 2009037930A1
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Prior art keywords
liquid material
film forming
vaporization
mist
produced
Prior art date
Application number
PCT/JP2008/064420
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English (en)
French (fr)
Inventor
Ikuo Sawada
Sumie Segawa
Kyoko Ikeda
Tatsuro Ohshita
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Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to EP08832514.7A priority Critical patent/EP2194161A4/en
Priority to CN2008800004240A priority patent/CN101568667B/zh
Priority to US12/678,765 priority patent/US20100297346A1/en
Publication of WO2009037930A1 publication Critical patent/WO2009037930A1/ja
Priority to US14/281,242 priority patent/US9343295B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31608—Deposition of SiO2
    • H01L21/31612—Deposition of SiO2 on a silicon body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　基板に対して液体材料を気化させた気体材料を供給して成膜処理を行うにあたり、高い効率で液体材料を気化して、パーティクルの発生を抑えること。 　基板に対して成膜処理を行うための液体材料中に、正及び負の一方に帯電した粒径が１０００ｎｍ以下の気泡を発生させ、この液体材料を霧化して液体材料のミストを形成し、更にその液体材料のミストを加熱して気化させる。液体材料中には、予め極めて微少な気泡が高い均一性をもって分散するため、この液体材料を霧化すると、極微細で均一な液体材料のミストが得られので、熱交換しやすい状態となる。この液体材料のミストを気化すると、気化効率が高くなり、パーティクルの発生が抑えられる。
PCT/JP2008/064420 2007-09-18 2008-08-11 気化装置、成膜装置、成膜方法、コンピュータプログラム及び記憶媒体 WO2009037930A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08832514.7A EP2194161A4 (en) 2007-09-18 2008-08-11 VAPORIZATION APPARATUS, FILM FORMING APPARATUS, FILM FORMING METHOD, COMPUTER PROGRAM, AND STORAGE MEDIUM
CN2008800004240A CN101568667B (zh) 2007-09-18 2008-08-11 汽化装置、成膜装置和成膜方法
US12/678,765 US20100297346A1 (en) 2007-09-18 2008-08-11 Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium
US14/281,242 US9343295B2 (en) 2007-09-18 2014-05-19 Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-241364 2007-09-18
JP2007241364A JP5104151B2 (ja) 2007-09-18 2007-09-18 気化装置、成膜装置、成膜方法及び記憶媒体

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/678,765 A-371-Of-International US20100297346A1 (en) 2007-09-18 2008-08-11 Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium
US14/281,242 Division US9343295B2 (en) 2007-09-18 2014-05-19 Vaporizing unit, film forming apparatus, film forming method, computer program and storage medium

Publications (1)

Publication Number Publication Date
WO2009037930A1 true WO2009037930A1 (ja) 2009-03-26

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PCT/JP2008/064420 WO2009037930A1 (ja) 2007-09-18 2008-08-11 気化装置、成膜装置、成膜方法、コンピュータプログラム及び記憶媒体

Country Status (7)

Country Link
US (2) US20100297346A1 (ja)
EP (1) EP2194161A4 (ja)
JP (1) JP5104151B2 (ja)
KR (1) KR101070138B1 (ja)
CN (1) CN101568667B (ja)
TW (1) TWI427181B (ja)
WO (1) WO2009037930A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120227761A1 (en) * 2009-08-26 2012-09-13 University Of Southampton Cleaning apparatus and method, and monitoring thereof
US11426772B2 (en) 2015-05-13 2022-08-30 Sloan Water Technology Limited Cleaning apparatus and method of using an acoustic transducer
US12017739B2 (en) 2017-12-06 2024-06-25 Sloan Water Technology Limited Apparatus and method for prevention and treatment of marine biofouling

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2207005B1 (en) * 2007-04-27 2012-01-25 Bandit N.V. A fog generator
CN102168257B (zh) * 2010-02-26 2014-03-26 鸿富锦精密工业（深圳）有限公司 镀膜装置
JP2012162754A (ja) * 2011-02-03 2012-08-30 Ulvac Japan Ltd 液体原料の気化方法及び気化器
CN103043601B (zh) * 2013-01-04 2016-02-10 上海交通大学 一种基片强适应性纳米材料均匀成膜方法及其装置
JP6151943B2 (ja) * 2013-03-26 2017-06-21 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
CN103305808A (zh) * 2013-06-13 2013-09-18 林嘉佑 二氧化硅薄膜的生产设备及其生产方法
KR20160147482A (ko) * 2015-06-15 2016-12-23 삼성전자주식회사 가스 혼합부를 갖는 반도체 소자 제조 설비
JP6675865B2 (ja) * 2015-12-11 2020-04-08 株式会社堀場エステック 液体材料気化装置
JP6783888B2 (ja) * 2019-03-15 2020-11-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及び記録媒体
WO2022009484A1 (ja) * 2020-07-08 2022-01-13 株式会社アルバック 成膜方法
CN112495691B (zh) * 2020-10-27 2022-04-12 南京科赫科技有限公司 一种烟气净化用滤袋深度镀膜装置
KR20240052767A (ko) 2021-09-09 2024-04-23 가부시키가이샤 프로테리아루 기화기
CN113913787A (zh) * 2021-10-15 2022-01-11 浙江生波智能装备有限公司 一种新型薄膜制备工艺及真空镀膜设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002143885A (ja) * 2000-11-14 2002-05-21 Hirobumi Onari 微細気泡
JP2004265938A (ja) * 2003-02-18 2004-09-24 Wakomu Denso:Kk 気化器及び原料溶液の気化方法並びに気化器の洗浄方法
JP2006100737A (ja) 2004-09-30 2006-04-13 Tokyo Electron Ltd 気化器、成膜装置及び成膜方法
JP2006147617A (ja) * 2004-11-16 2006-06-08 Dainippon Screen Mfg Co Ltd 基板処理装置およびパーティクル除去方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4020979A (en) * 1975-10-15 1977-05-03 Summit Packaging Systems, Inc. Squeeze-bottle-type spray dispenser
US4647212A (en) * 1986-03-11 1987-03-03 Act Laboratories, Inc. Continuous, static mixing apparatus
ATE139580T1 (de) * 1989-09-26 1996-07-15 Canon Kk Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage
US6244575B1 (en) * 1996-10-02 2001-06-12 Micron Technology, Inc. Method and apparatus for vaporizing liquid precursors and system for using same
EP0878560B1 (en) * 1997-05-16 2004-09-29 Tokyo Electron Limited Vapor generating method and apparatus using same
JP3470055B2 (ja) * 1999-01-22 2003-11-25 株式会社渡邊商行 Ｍｏｃｖｄ用気化器及び原料溶液の気化方法
US20020062789A1 (en) * 2000-11-29 2002-05-30 Tue Nguyen Apparatus and method for multi-layer deposition
TW560029B (en) * 2001-01-18 2003-11-01 Watanabe M & Co Ltd Carburetor, various types of devices using the carburetor, and method vaporization
US6669115B2 (en) * 2002-02-07 2003-12-30 Tai-Yen Sun Vortex twin-fluid nozzle with self-cleaning pintle
JP2004121962A (ja) * 2002-10-01 2004-04-22 National Institute Of Advanced Industrial & Technology ナノバブルの利用方法及び装置
JP4186644B2 (ja) 2003-02-17 2008-11-26 株式会社Ｉｈｉ 真空処理装置の冷却装置
JP4449391B2 (ja) 2003-09-29 2010-04-14 パナソニック株式会社 二流体ノズル
JP4144669B2 (ja) * 2004-03-05 2008-09-03 独立行政法人産業技術総合研究所 ナノバブルの製造方法
US7981286B2 (en) * 2004-09-15 2011-07-19 Dainippon Screen Mfg Co., Ltd. Substrate processing apparatus and method of removing particles
EP1844847B1 (en) * 2005-01-13 2009-07-08 National University Corporation University of Tsukuba Microbubble generator and microbubble generating method
EP1910659B1 (en) * 2005-08-05 2012-02-01 Scion-Sprays Limited A fuel injection system for an internal combustion engine
JP4665839B2 (ja) * 2006-06-08 2011-04-06 パナソニック電工株式会社 静電霧化装置
JP5023705B2 (ja) * 2007-01-10 2012-09-12 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002143885A (ja) * 2000-11-14 2002-05-21 Hirobumi Onari 微細気泡
JP2004265938A (ja) * 2003-02-18 2004-09-24 Wakomu Denso:Kk 気化器及び原料溶液の気化方法並びに気化器の洗浄方法
JP2006100737A (ja) 2004-09-30 2006-04-13 Tokyo Electron Ltd 気化器、成膜装置及び成膜方法
JP2006147617A (ja) * 2004-11-16 2006-06-08 Dainippon Screen Mfg Co Ltd 基板処理装置およびパーティクル除去方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2194161A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120227761A1 (en) * 2009-08-26 2012-09-13 University Of Southampton Cleaning apparatus and method, and monitoring thereof
US11577284B2 (en) * 2009-08-26 2023-02-14 Sloan Water Technology Limited Cleaning apparatus and method, and monitoring thereof
US11426772B2 (en) 2015-05-13 2022-08-30 Sloan Water Technology Limited Cleaning apparatus and method of using an acoustic transducer
US12017739B2 (en) 2017-12-06 2024-06-25 Sloan Water Technology Limited Apparatus and method for prevention and treatment of marine biofouling

Also Published As

Publication number Publication date
KR101070138B1 (ko) 2011-10-05
US20100297346A1 (en) 2010-11-25
TWI427181B (zh) 2014-02-21
JP5104151B2 (ja) 2012-12-19
KR20100045511A (ko) 2010-05-03
CN101568667A (zh) 2009-10-28
JP2009074108A (ja) 2009-04-09
EP2194161A4 (en) 2013-04-24
US20140256157A1 (en) 2014-09-11
EP2194161A1 (en) 2010-06-09
US9343295B2 (en) 2016-05-17
CN101568667B (zh) 2011-05-11
TW200927982A (en) 2009-07-01

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