WO2009035112A1 - スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法 - Google Patents

スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法 Download PDF

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Publication number
WO2009035112A1
WO2009035112A1 PCT/JP2008/066605 JP2008066605W WO2009035112A1 WO 2009035112 A1 WO2009035112 A1 WO 2009035112A1 JP 2008066605 W JP2008066605 W JP 2008066605W WO 2009035112 A1 WO2009035112 A1 WO 2009035112A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
composite membrane
substraight
electroconductive
film
Prior art date
Application number
PCT/JP2008/066605
Other languages
English (en)
French (fr)
Inventor
Kazuhiko Yamasaki
Toshiharu Hayashi
Masahide Arai
Satoko Ogawa
Yoshiaki Takata
Original Assignee
Mitsubishi Materials Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008224497A external-priority patent/JP5538695B2/ja
Application filed by Mitsubishi Materials Corporation filed Critical Mitsubishi Materials Corporation
Priority to CN2008801064094A priority Critical patent/CN101803037B/zh
Priority to EP08830345.8A priority patent/EP2190027B1/en
Priority to US12/733,585 priority patent/US8921688B2/en
Publication of WO2009035112A1 publication Critical patent/WO2009035112A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

　このスーパーストレート型太陽電池用又はサブストレート型太陽電池用の複合膜は、透明導電膜と導電性反射膜とを有し、前記透明導電膜が、導電性酸化物微粒子を含む透明導電膜用組成物又は分散液を湿式塗工法を用いて塗布することにより形成され、前記導電性反射膜が、金属ナノ粒子を含む導電性反射膜用組成物を湿式塗工法を用いて塗布することにより形成され、前記導電性反射膜の光電変換層側又は前記透明導電膜側の接触面に出現する気孔の平均直径が１００ｎｍ以下、前記気孔が位置する平均深さが１００ｎｍ以下、前記気孔の数密度が３０個／μｍ２以下である。
PCT/JP2008/066605 2007-09-12 2008-09-12 スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法 WO2009035112A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801064094A CN101803037B (zh) 2007-09-12 2008-09-12 超直型太阳能电池用复合膜及其制造方法、以及亚直型太阳能电池用复合膜及其制造方法
EP08830345.8A EP2190027B1 (en) 2007-09-12 2008-09-12 Process for producing a composite membrane for superstrate solar cell
US12/733,585 US8921688B2 (en) 2007-09-12 2008-09-12 Composite film for superstrate solar cell having conductive film and electroconductive reflective film formed by applying composition containing metal nanoparticles and comprising air pores of preset diameter in contact surface

Applications Claiming Priority (20)

Application Number Priority Date Filing Date Title
JP2007-236546 2007-09-12
JP2007236546 2007-09-12
JP2008-205862 2008-08-08
JP2008205870 2008-08-08
JP2008-205849 2008-08-08
JP2008-205867 2008-08-08
JP2008-205870 2008-08-08
JP2008205867 2008-08-08
JP2008205862 2008-08-08
JP2008205849 2008-08-08
JP2008224513 2008-09-02
JP2008224499 2008-09-02
JP2008-224515 2008-09-02
JP2008224515 2008-09-02
JP2008224508 2008-09-02
JP2008-224508 2008-09-02
JP2008-224513 2008-09-02
JP2008-224499 2008-09-02
JP2008224497A JP5538695B2 (ja) 2007-09-12 2008-09-02 スーパーストレート型薄膜太陽電池用の複合膜
JP2008-224497 2008-09-02

Publications (1)

Publication Number Publication Date
WO2009035112A1 true WO2009035112A1 (ja) 2009-03-19

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Application Number Title Priority Date Filing Date
PCT/JP2008/066605 WO2009035112A1 (ja) 2007-09-12 2008-09-12 スーパーストレート型太陽電池用の複合膜及びその製造方法、並びにサブストレート型太陽電池用の複合膜及びその製造方法

Country Status (4)

Country Link
US (1) US8921688B2 (ja)
EP (1) EP2190027B1 (ja)
CN (1) CN101803037B (ja)
WO (1) WO2009035112A1 (ja)

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JP2010080933A (ja) * 2008-08-27 2010-04-08 Mitsubishi Materials Corp 太陽電池用透明導電膜及びその透明導電膜用組成物、多接合型太陽電池
JP2011066403A (ja) * 2009-08-20 2011-03-31 Mitsubishi Materials Corp サブストレート型薄膜太陽電池の反射電極層及びその製造方法
CN102097513A (zh) * 2009-10-23 2011-06-15 三菱综合材料株式会社 导电性反射膜及其制造方法
JP2011151291A (ja) * 2010-01-25 2011-08-04 Mitsubishi Materials Corp 透明導電膜、複合膜及びその製造方法
CN102201274A (zh) * 2010-03-26 2011-09-28 三菱综合材料株式会社 导电膜形成用组成物、太阳能电池用复合膜及其形成方法
CN102263158A (zh) * 2010-05-27 2011-11-30 三菱综合材料株式会社 太阳电池用的复合膜的形成方法及用该方法形成的复合膜
WO2012033205A1 (ja) * 2010-09-10 2012-03-15 三菱電機株式会社 太陽電池および太陽電池モジュール
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