WO2008129963A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
WO2008129963A1
WO2008129963A1 PCT/JP2008/057176 JP2008057176W WO2008129963A1 WO 2008129963 A1 WO2008129963 A1 WO 2008129963A1 JP 2008057176 W JP2008057176 W JP 2008057176W WO 2008129963 A1 WO2008129963 A1 WO 2008129963A1
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WIPO (PCT)
Prior art keywords
layer
metal
emitting device
semiconductor light
gaas
Prior art date
Application number
PCT/JP2008/057176
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English (en)
French (fr)
Inventor
Masakazu Takao
Mitsuhiko Sakai
Kazuhiko Senda
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP08740273.1A priority Critical patent/EP2139052B1/en
Priority to KR1020097023683A priority patent/KR101446370B1/ko
Priority to US12/596,004 priority patent/US8106412B2/en
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008129963A1 publication Critical patent/WO2008129963A1/ja
Priority to US13/327,860 priority patent/US8536598B2/en
Priority to US14/286,696 priority patent/US9196808B2/en
Priority to US14/928,349 priority patent/US9450145B2/en
Priority to US15/248,332 priority patent/US9786819B2/en
Priority to US15/716,452 priority patent/US10032961B2/en
Priority to US16/015,282 priority patent/US10483435B2/en
Priority to US16/657,403 priority patent/US11616172B2/en
Priority to US18/169,555 priority patent/US20230197906A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
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    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
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    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
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    • H01L33/40—Materials therefor
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

　不透明な半導体基板を用いて、金属反射層を形成して高輝度の半導体発光素子およびその製造方法を提供する。 　ＧａＡｓ層３と、ＧａＡｓ層の表面に配置された第１金属バッファ層２と、第１金属バッファ層上に配置された第１金属層１と、ＧａＡｓ層の裏面に配置された第２金属バッファ層４と第２金属層５とを備えるＧａＡｓ基板構造と、ＧａＡｓ基板構造上に配置され、第３金属層１２と、第３金属層上に配置される金属コンタクト層１１と、金属コンタクト層上に配置されるｐ型クラッド層１０と、ｐ型クラッド層に配置される多重量子井戸層９と、多重量子井戸層上に配置されるｎ型クラッド層８と、ｎ型クラッド層上に配置されるウィンドウ層７を備える発光ダイオード構造とから構成され、第１金属層１および第３金属層１２を用いて、ＧａＡｓ基板構造と、発光ダイオード構造を貼り付けることを特徴とする。
PCT/JP2008/057176 2007-04-16 2008-04-11 半導体発光素子およびその製造方法 WO2008129963A1 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
EP08740273.1A EP2139052B1 (en) 2007-04-16 2008-04-11 Semiconductor light-emitting device and method for manufacturing the same
KR1020097023683A KR101446370B1 (ko) 2007-04-16 2008-04-11 반도체 발광 소자 및 그 제조 방법
US12/596,004 US8106412B2 (en) 2007-04-16 2008-04-11 Semiconductor light emitting device and fabrication method for the same
US13/327,860 US8536598B2 (en) 2007-04-16 2011-12-16 Semiconductor light emitting device and fabrication method for the same
US14/286,696 US9196808B2 (en) 2007-04-16 2014-05-23 Semiconductor light emitting device
US14/928,349 US9450145B2 (en) 2007-04-16 2015-10-30 Semiconductor light emitting device
US15/248,332 US9786819B2 (en) 2007-04-16 2016-08-26 Semiconductor light emitting device
US15/716,452 US10032961B2 (en) 2007-04-16 2017-09-26 Semiconductor light emitting device
US16/015,282 US10483435B2 (en) 2007-04-16 2018-06-22 Semiconductor light emitting device
US16/657,403 US11616172B2 (en) 2007-04-16 2019-10-18 Semiconductor light emitting device with frosted semiconductor layer
US18/169,555 US20230197906A1 (en) 2007-04-16 2023-02-15 Semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007107130A JP5346443B2 (ja) 2007-04-16 2007-04-16 半導体発光素子およびその製造方法
JP2007-107130 2007-04-16

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/596,004 A-371-Of-International US8106412B2 (en) 2007-04-16 2008-04-11 Semiconductor light emitting device and fabrication method for the same
US13/327,860 Division US8536598B2 (en) 2007-04-16 2011-12-16 Semiconductor light emitting device and fabrication method for the same

Publications (1)

Publication Number Publication Date
WO2008129963A1 true WO2008129963A1 (ja) 2008-10-30

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US (10) US8106412B2 (ja)
EP (1) EP2139052B1 (ja)
JP (1) JP5346443B2 (ja)
KR (1) KR101446370B1 (ja)
CN (2) CN101657912A (ja)
TW (1) TWI481065B (ja)
WO (1) WO2008129963A1 (ja)

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US20160365489A1 (en) 2016-12-15
EP2139052B1 (en) 2018-11-21
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