KR100999726B1 - 발광소자 및 그 제조방법 - Google Patents
발광소자 및 그 제조방법 Download PDFInfo
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- KR100999726B1 KR100999726B1 KR20090039015A KR20090039015A KR100999726B1 KR 100999726 B1 KR100999726 B1 KR 100999726B1 KR 20090039015 A KR20090039015 A KR 20090039015A KR 20090039015 A KR20090039015 A KR 20090039015A KR 100999726 B1 KR100999726 B1 KR 100999726B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0033—Devices characterised by their operation having Schottky barriers
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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Abstract
Description
Claims (13)
- 제2 도전형 반도체층, 활성층 및 제1 도전형 반도체층;상기 제2 도전형 반도체층 하면의 제1 영역에 배치되는 오믹층;상기 오믹층 아래에 배치되는 반사층;상기 제2 도전형 반도체층 하면의 제1 영역 외의 제2 영역에 배치되는 전류차단층;상기 제2 도전형 반도체층 아래에 제2 기판;상기 제1 도전형 반도체층 상에 제1 전극; 및상기 제2 기판과 상기 전류차단층 사이에 위치하고 상기 반사층 하면으로 연장되는 접합층을 포함하고,상기 접합층의 하면으로부터 상기 전류차단층까지의 높이는 상기 접합층의 하면으로부터 상기 반사층까지의 높이보다 큰 발광소자.
- 제1 항에 있어서,상기 제1 전극은,상기 제1 도전형 반도체층 상에 형성되고, 상기 전류차단층과 적어도 일부분이 수직 방향에서 오버랩되는 발광소자.
- 제1 항에 있어서,상기 전류차단층은 상기 반사층과는 다른 물질로 형성되는 발광소자.
- 제1 항에 있어서,상기 전류차단층은,비오믹 메탈(non-ohmic metal)로 형성되는 발광소자.
- 제 1항에 있어서,상기 전류차단층은측면이 상기 오믹층과 접촉하고, 상면이 상기 제2 도전형 반도체층과 접촉하는 발광소자.
- 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 형성하는 단계;상기 제2 도전형 반도체층 상에 오믹층, 반사층을 형성하는 단계;상기 제2 도전형 반도체층의 제2 영역을 노출하는 트렌치를 형성하는 단계;상기 트렌치의 일부를 채우는 전류차단층을 형성하는 단계;상기 트렌치를 메우면서 상기 반사층 및 상기 전류차단층 상에 형성되는 접합층을 형성하는 단계; 및상기 제1 도전형 반도체층 상에 제1 전극을 형성하는 단계;를 포함하고,상기 접합층의 하면으로부터 상기 전류차단층까지의 높이는 상기 접합층의 하면으로부터 상기 반사층까지의 높이보다 큰 발광소자의 제조방법.
- 제6 항에 있어서,상기 제1 전극을 형성하는 단계는,상기 제1 도전형 반도체층 상에 형성되고, 상기 전류차단층과 적어도 일부분이 수직 방향에서 오버랩되는 제1 전극을 형성하는 발광소자의 제조방법.
- 제6 항에 있어서,상기 전류차단층을 형성하는 단계는,상기 반사층과 다른 물질로 형성되는 발광소자의 제조방법.
- 제6 항에 있어서,상기 전류차단층은 비오믹 메탈(non-ohmic metal)로 형성되는 발광소자의 제조방법.
- 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 형성하는 단계;상기 제2 도전형 반도체층 상의 제1 영역에 오믹층, 반사층을 형성하는 단계;상기 제2 도전형 반도체층 상의 제1 영역 외의 제2 영역에 전류차단층을 형성하는 단계; 및상기 제1 도전형 반도체층 상에 제1 전극을 형성하는 단계;를 포함하고,상기 오믹층, 반사층을 형성하는 단계는,상기 제2 도전형 반도체층의 제2 영역 상에 제1 패턴을 형성하는 단계;상기 제2 도전형 반도체층의 제1 영역 상에 오믹층, 반사층을 형성하는 단계; 및상기 제1 패턴을 제거하는 단계;를 포함하는 발광소자의 제조방법.
- 제1 도전형 반도체층, 활성층 및 제2 도전형 반도체층을 형성하는 단계;상기 제2 도전형 반도체층 상의 제1 영역에 오믹층, 반사층을 형성하는 단계;상기 제2 도전형 반도체층 상의 제1 영역 외의 제2 영역에 전류차단층을 형성하는 단계; 및상기 제1 도전형 반도체층 상에 제1 전극을 형성하는 단계;를 포함하고,상기 오믹층, 반사층을 형성하는 단계는,상기 제2 도전형 반도체층 상에 오믹층, 반사층을 형성하는 단계;상기 제2 영역 상의 오믹층, 반사층을 노출하는 제2 패턴을 상기 반사층 상에 형성하는 단계; 및상기 제2 패턴을 마스크로 상기 제2 영역 상의 오믹층, 반사층을 제거하는 단계;를 포함하는 발광소자의 제조방법.
- 제11 항에 있어서,상기 전류차단층을 형성하는 단계는,상기 제2 영역 상의 오믹층, 반사층을 제거하는 단계 후에,상기 제2 도전형 반도체층의 제2 영역 상에 전류차단층을 형성하는 단계; 및상기 제2 패턴을 제거하는 단계;를 포함하는 발광소자의 제조방법.
- 제6 항에 있어서,상기 전류차단층을 형성하는 단계 후에,상기 반사층, 상기 전류차단층 상에 제2 기판을 형성하는 단계를 포함하는 발광소자의 제조방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090039015A KR100999726B1 (ko) | 2009-05-04 | 2009-05-04 | 발광소자 및 그 제조방법 |
US12/772,985 US8222661B2 (en) | 2009-05-04 | 2010-05-03 | Light emitting device, light emitting device package and lighting system including the same |
EP10161793.4A EP2249405B1 (en) | 2009-05-04 | 2010-05-03 | Method of manufacturing a light emitting device |
CN201010170274.7A CN101882658B (zh) | 2009-05-04 | 2010-05-04 | 发光器件、发光器件封装和包括该封装的照明*** |
US13/526,411 US8513681B2 (en) | 2009-05-04 | 2012-06-18 | Light emitting device, light emitting device package and lighting system including the same |
US13/963,877 US8907363B2 (en) | 2009-05-04 | 2013-08-09 | Light emitting device, light emitting device package and lighting system including the same |
US14/535,122 US9343640B2 (en) | 2009-05-04 | 2014-11-06 | Light emitting device, light emitting device package and lighting system including the same |
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KR20090039015A KR100999726B1 (ko) | 2009-05-04 | 2009-05-04 | 발광소자 및 그 제조방법 |
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KR20100120027A KR20100120027A (ko) | 2010-11-12 |
KR100999726B1 true KR100999726B1 (ko) | 2010-12-08 |
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EP (1) | EP2249405B1 (ko) |
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EP2249405A2 (en) | 2010-11-10 |
US20100276715A1 (en) | 2010-11-04 |
EP2249405A3 (en) | 2014-01-08 |
US8907363B2 (en) | 2014-12-09 |
KR20100120027A (ko) | 2010-11-12 |
CN101882658A (zh) | 2010-11-10 |
US20150060927A1 (en) | 2015-03-05 |
CN101882658B (zh) | 2014-11-19 |
EP2249405B1 (en) | 2018-04-25 |
US9343640B2 (en) | 2016-05-17 |
US20120256226A1 (en) | 2012-10-11 |
US8513681B2 (en) | 2013-08-20 |
US8222661B2 (en) | 2012-07-17 |
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