WO2007135861A1 - 電極界面を改善した有機fet及びその製造方法 - Google Patents
電極界面を改善した有機fet及びその製造方法 Download PDFInfo
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- WO2007135861A1 WO2007135861A1 PCT/JP2007/059591 JP2007059591W WO2007135861A1 WO 2007135861 A1 WO2007135861 A1 WO 2007135861A1 JP 2007059591 W JP2007059591 W JP 2007059591W WO 2007135861 A1 WO2007135861 A1 WO 2007135861A1
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- molecular layer
- source electrode
- drain electrode
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- 238000000034 method Methods 0.000 title description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 14
- 239000002052 molecular layer Substances 0.000 claims description 115
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 125000001424 substituent group Chemical group 0.000 claims description 9
- -1 alkane thiol Chemical class 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 abstract description 45
- WLHCBQAPPJAULW-UHFFFAOYSA-N 4-methylbenzenethiol Chemical compound CC1=CC=C(S)C=C1 WLHCBQAPPJAULW-UHFFFAOYSA-N 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 35
- 230000000052 comparative effect Effects 0.000 description 29
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 10
- 238000007654 immersion Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- ZRKMQKLGEQPLNS-UHFFFAOYSA-N 1-Pentanethiol Chemical compound CCCCCS ZRKMQKLGEQPLNS-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- VTXVGVNLYGSIAR-UHFFFAOYSA-N decane-1-thiol Chemical compound CCCCCCCCCCS VTXVGVNLYGSIAR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LXUNZSDDXMPKLP-UHFFFAOYSA-N 2-Methylbenzenethiol Chemical compound CC1=CC=CC=C1S LXUNZSDDXMPKLP-UHFFFAOYSA-N 0.000 description 1
- 206010048334 Mobility decreased Diseases 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
- H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
Definitions
- the present invention relates to an organic FET having an improved electrode interface and a method for producing the same. More specifically, regarding the improvement of the interface (electrode interface) between the source and drain electrodes and the semiconductor layer, the on-current (drive current) is improved and the contact resistance (metal / semiconductor contact resistance on the electrode surface) is reduced.
- the present invention relates to an organic FET and a manufacturing method thereof.
- An organic FET has a configuration including three electrodes, a gate, a source, and a drain, as in the case of using an inorganic semiconductor.
- the current between the drain and source electrodes is controlled by the voltage applied to the gate electrode.
- organic semiconductors are less conductive than inorganic semiconductors, so there are fewer carriers induced in the active layer of organic FETs. Therefore, in order to form the channel of the active layer, carrier injection from the drain electrode and the source electrode is necessary.
- FIG. 8 shows a cross-sectional view of a conventional organic FET described in Patent Document 1.
- a glass substrate is used as the insulating substrate 101, and a chromium film having a thickness of lOOnm is formed thereon with a sputtering, and then the gate electrode 102 is formed by photolithography.
- SiN having a thickness of 300 nm is formed by CVD (Chemical Vapor Deposition) to form the gate insulating film 103.
- chrome with a thickness of lnm and gold with a thickness of lOOnm are sequentially deposited on the resist pattern, and a source electrode 104 and a drain electrode 105 are formed by a lift-off method.
- a source electrode 104 and a drain electrode 105 are formed by a lift-off method.
- the laminated body is immersed in an Octadecanethiol solution of 0. ImMolZl for 1 minute, and then an adsorption molecular layer 701 is formed on the surfaces of the source electrode 104 and the drain electrode 105.
- the adsorbed molecular layer 701 has a structure in which octadecanethiol molecules from which H has been desorbed from the mercapto group of octadecanethiol are oriented on the electrode surface, and sulfur atoms are adsorbed on the electrode surface. Finally, under an atmosphere of pentacene 2. 7 X 10- 4 Pa thickness 50 nm, deposited at 0. lnm / s, to form a semiconductor layer 106 covering the gate insulating film and the adsorbed molecules layer.
- the action of the adsorbed molecular layer 701 in the organic FET is as follows. That is, by forming the adsorption molecular layer 701 on the surface of the source electrode 104 and the drain electrode 105, the water repellency of the electrode surface is improved and the grain of the semiconductor layer 106 is increased.
- the contact angle which is an index of water repellency, changes to 95 degrees and 101 degrees, respectively. If the immersion time is 1 day in order to improve the water repellency of the electrode surface, the drain-source current is reduced by two orders of magnitude compared to the case where the adsorbed molecular layer 701 is not formed.
- the thickness of the adsorbed molecular layer 701 increases to about 2.3 nm, and the efficiency with which carriers are injected from the source electrode 104 into the semiconductor layer 106 via the adsorbed molecular layer 701 is reduced.
- the immersion time is shortened to 1 minute, the thickness of the adsorbed molecular layer 701 becomes 1 nm or less, and the carrier injection efficiency from the source electrode 104 to the semiconductor layer 106 is improved.
- the drain-source current increases. That is, according to the technique of Patent Document 1, by setting the immersion time short, the thickness of the adsorbed molecular layer is reduced and the efficiency of carrier injection is increased.
- Patent Document 2 Another document related to the above technique is, for example, Patent Document 2.
- Patent Document 1 JP-A-2005-93542 (especially pages 7 to 9)
- Patent Document 2 JP-A-2005-223107 (particularly paragraph 0023)
- Patent Document 1 it is necessary to reduce the immersion time in order to increase the carrier injection efficiency, so that the water repellency of the electrode surface is not improved so much. Therefore, the semiconductor layer near the electrode interface is too large, and the conductivity of the semiconductor layer is insufficient.
- the present invention has been made in view of the above viewpoint. That is, the present invention provides an organic FET with improved on-current and reduced external resistance by improving the interface between the source and drain electrodes and the semiconductor layer by means different from the conventional one. Objective. Means for solving the problem
- the present inventor inserted a specific organic molecular layer (first organic molecular layer) on the upper surfaces of the source electrode and the drain electrode,
- the inventors have found that the above object can be achieved by inserting a specific organic molecular layer (second organic molecular layer) different from the above into the opposite side surfaces of the drain electrode, and have completed the present invention.
- the present invention relates to the following organic FET and a method for producing the same.
- a gate insulating film is laminated on the substrate
- a source electrode made of metal and a drain electrode made of metal are arranged facing each other in the horizontal direction,
- An organic FET having an organic semiconductor layer covering the gate insulating film, the source electrode, and the drain electrode, (1) a first organic molecular layer is formed between the upper surface of the source electrode and the semiconductor layer, and between the upper surface of the drain electrode and the semiconductor layer,
- a second organic molecular layer is formed between the opposing side surface of the source electrode and the semiconductor layer, and between the opposing side surface of the drain electrode and the semiconductor layer, respectively.
- the first organic molecular layer is composed of alkane thiol molecules having 4 or more carbon atoms which may have a substituent,
- the second organic molecular layer is composed of at least one molecule selected from the group consisting of p-thiotalesol molecules and thiophenol molecules.
- n is an integer from 4 to 12, and the general formula is C H n 2n + l
- Item 2 The organic FET according to Item 1, which is represented by S.
- a second organic molecular layer composed of at least one kind of molecule selected from the group consisting of P-thiotalesol molecules and thiophenol molecules is formed on the opposite side surfaces of the source electrode and the opposite side surfaces of the drain electrode, respectively.
- Step 5 Covering the gate insulating film, the first organic molecular layer, and the second organic molecular layer. Step 5 of laminating an organic semiconductor layer to cover.
- the organic FET of the present invention has a first organic molecular layer on the upper surface of the source electrode and the drain electrode, and has a second organic molecular layer on the opposite side surfaces of the two electrodes, thereby making it more than conventional products.
- the on-current is improved and the contact resistance is reduced.
- Such an organic FET of the present invention is useful as a low-voltage driving device or the like, and can be applied to, for example, a wireless ID tag.
- the production method of the present invention is suitable as a method for producing the organic FET.
- FIG. 1 is a cross-sectional view of an organic FET in one embodiment of the present invention.
- FIG. 2 is a top view of an organic FET in one embodiment of the present invention.
- FIG. 3 is a flowchart showing a method for producing an organic FET of the present invention.
- FIG. 4 is a graph showing device characteristics of Example 1 and Control Example 1.
- FIG. 5 is a graph showing contact resistances of Example 1 and Control Example 1.
- FIG. 6 is a graph showing the ratio of on-current and mobility to Examples:! -3: Comparative Example:!-3, and the ratio of on-current and mobility of Comparative Example 1 to Comparative Example 1.
- FIG. 7 is a graph showing the ratio of contact resistance to Comparative Examples 1 to 3 in Examples 1 to 3 and the ratio of contact resistance to Comparative Example 1 in Comparative Example 1.
- FIG. 8 is a cross-sectional view of a conventional organic FET (for example, Patent Document 1).
- the organic FET of the present invention has a gate insulating film laminated on a substrate,
- a source electrode made of metal and a drain electrode made of metal are arranged facing each other in the horizontal direction,
- An organic FET having an organic semiconductor layer covering the gate insulating film, the source electrode, and the drain electrode,
- a first organic molecular layer is formed between the upper surface of the source electrode and the semiconductor layer, and between the upper surface of the drain electrode and the semiconductor layer,
- a second organic molecular layer is formed between the opposing side surface of the source electrode and the semiconductor layer, and between the opposing side surface of the drain electrode and the semiconductor layer, respectively.
- the first organic molecular layer is composed of alkane thiol molecules having 4 or more carbon atoms which may have a substituent,
- the second organic molecular layer is characterized by comprising at least one molecule selected from the group consisting of p-thiotalesol molecules and thiophenol molecules.
- the organic FET of the present invention has a first organic molecular layer (which may have a substituent), particularly between the upper surface of the source electrode and the semiconductor layer and between the upper surface of the drain electrode and the semiconductor layer.
- a layer composed of alkanethiol molecules having 4 or more carbon atoms and between the opposing side surface of the source electrode and the semiconductor layer and between the opposing side surface of the drain electrode and the semiconductor layer, respectively.
- An organic molecular layer (a layer composed of at least one molecule selected from the group consisting of p-thiotalezole molecules and thiophenol molecules) is formed.
- the first organic molecular layer is more hydrophobic than the second organic molecular layer.
- alkanethiol molecule mercapto each of alkanethiol, p_thiocrezonole, and thiophenol. It means each molecule formed by elimination of the hydrogen atom (H) of the group (—SH).
- H hydrogen atom
- p_thiocrezonole a structure in which the hydrogen atom of the mercapto group is eliminated
- S_) is called 1_butanethiol molecule.
- alkanethiol “p_thiocresol”, and “thiof ⁇ nol” that do not end with the word “molecule” are different from the above, and the mercapto group (one SH) This means that the hydrogen atom (H) is not desorbed.
- alkanethiol solution “p-taresol solution”, and “thienol solution” mean solutions in which alkanethiol, p-cresol, and thienol are dissolved in the solvent as solutes, respectively. .
- the organic FET of the present invention is not particularly limited in the other configurations as long as the first organic molecular layer and the second organic molecular layer satisfy the above-mentioned definition. That is, the substrate, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor layer, and the like constituting the organic FET are not particularly limited, and a conventionally used configuration can be used as it is.
- FIG. 1 is a cross-sectional view of an organic FET according to an embodiment of the present invention.
- FIG. 2 is a top view of the organic FET in one embodiment of the present invention.
- FIG. 1 is a substrate, 2 is a gate insulating film, 3 is a source electrode, 4 is a drain electrode, 5 is a first organic molecular layer, 6 is a second organic molecular layer, and 7 is a semiconductor layer. is there.
- the embodiment of FIG. 1 is a bottom contact structure in which the source electrode 3 and the drain electrode 4 are formed below the semiconductor layer 7, but the present invention is not limited to this embodiment.
- the substrate 1 is not limited, and for example, a Si substrate can be used.
- Si substrate is n-type impurity
- the substrate 1 itself can be used as a gate electrode.
- An example is a Si substrate doped with arsenic (As) at a concentration of about 1 ⁇ 10 2 ° / cm 3 .
- the gate electrode may be formed by patterning on a substrate that does not contain impurities.
- a thermal oxide film is generally used. That is, when a Si substrate is used, SiO can be used as the gate insulating film 2.
- p-TEOS p-TEOS
- an insulating film such as SiO or polyimide formed by sputtering.
- the source electrode 3 and the drain electrode 4 are made of metal.
- stacked these metal layers sequentially using Cr as an adhesion layer and Au as an electrode layer is mentioned.
- a configuration using Ti as the adhesion layer and Pd, Pt, or Ag as the electrode layer can be mentioned.
- Such a source electrode 3 and a drain electrode 4 are disposed on the surface of the gate insulating film 2 so as to face each other in the horizontal direction.
- a first organic molecular layer 5 and a second organic molecular layer 6 are formed on the surfaces of the source electrode 3 and the drain electrode 4 as described later, and a semiconductor is formed so as to cover these and the gate insulating film 2.
- Layer 7 is laminated. Specifically, the first organic molecular layer 5 is formed between the upper surface of the source electrode 3 and the semiconductor layer 7 and between the upper surface of the drain electrode 4 and the semiconductor layer 7.
- a second organic molecular layer 6 is formed between the side surface facing the source electrode 3 and the semiconductor layer 7 and between the side surface facing the drain electrode 4 and the semiconductor layer 7.
- the first organic molecular layer 5 is made of an alkanethiol molecule having 4 or more carbon atoms which may have a substituent. If the alkanethiol molecule has 4 or more carbon atoms, it is good, but the upper limit is preferably about 12, and more preferably about 10. That is, the carbon number is preferably 4 or more and 12 or less, more preferably 4 or more and 10 or less.
- R_S— an alkanethiol molecule is described as “R_S—”
- the molecule is oriented on the electrode surface in the form of an R_S_electrode (metal) to form a self-assembled film.
- n is an integer of 4 or more and 12 or less.
- alkanethiol molecules such as children.
- the thickness of the first organic molecular layer 5 is not limited, but is preferably about 0.5 to 2 nm. 0.6 to about 1.6 nm is more preferable.
- the second organic molecular layer 6 is made of at least one selected from the group consisting of p-thiotalesol molecules and thiophenol molecules. These molecules are thiol compound molecules having a ⁇ -conjugated bond.
- the second organic molecular layer 6 is a self-assembled film like the first organic molecular layer 5, and when the molecule of the thiol compound is described as “one S-”, the molecule is R 1 _S. _Self-assembled film is formed by being oriented on the electrode surface in the form of electrode (metal).
- the thickness of the second organic molecular layer 6 is not limited, but is preferably about 0.3 to 1 nm, more preferably 0.5 to 0.7 nm.
- the first organic molecular layer 5 is preferably formed only on the upper surfaces of the source electrode 3 and the drain electrode 4.
- the second organic molecular layer 6 is desirably formed only on the side surface facing the source electrode 3 and the side surface facing the drain electrode 4.
- the second organic molecular layer 6 is formed on part of the upper surface of the source electrode 3 and the drain electrode 4, but it is allowed to be partially formed unavoidably.
- the semiconductor layer 7 is laminated so as to cover the gate insulating film 2, the first organic molecular layer 5, and the second organic molecular layer 6.
- the semiconductor layer 7 for example, pentacene, which is a p-type organic semiconductor, is used.
- an organic semiconductor material that conducts carriers may be used.
- L is the gate length
- W is the gate width
- D is the width of the second organic molecular layer 6 formed on a part of the upper surface of the source electrode 3 and the drain electrode 4.
- L can be set to 30 to 500 ⁇ m, W to 1 mm, and D to 200 ⁇ m.
- D is the length of the second organic molecular layer 6 formed so as to protrude to the upper surface of the electrode, and is preferably as small as possible, and is most preferably 0.
- the organic FET of the present invention can be suitably manufactured by, for example, a method for manufacturing an organic FET characterized by having the following steps.
- a second organic molecular layer composed of at least one kind of molecule selected from the group consisting of ⁇ -thiotalesol molecule and thiophenol molecule is formed on the opposite side surface of the source electrode and the opposite side surface of the drain electrode, respectively.
- Step 5 of stacking an organic semiconductor layer covering the gate insulating film, the first organic molecular layer, and the second organic molecular layer.
- the above manufacturing method is characterized by a step of forming the first organic molecular layer and the second organic molecular layer on the surfaces of the gate electrode and the drain electrode (particularly, steps 2 to 4).
- the above manufacturing method will be exemplarily described with reference to FIG. Fig. 3 is a flowchart showing an example of a method for manufacturing an organic FET.
- the description of the substrate, the gate insulating film, the source electrode, the drain electrode, the organic semiconductor layer, the first organic molecular layer, and the second organic molecular layer is as described above. Is the same.
- step 1 a source electrode 3 made of metal and a drain electrode 4 made of metal are arranged on the gate insulating film 2 formed on the surface of the substrate 1 so as to face each other in the horizontal direction.
- the substrate for example, a Si substrate doped with an n-type impurity is prepared. This substrate also serves as the gate electrode. Forming SiO by oxidizing the surface of substrate 1
- Gate insulating film 2 For example, an oxide film is formed by oxidizing the surface of the substrate 1 in an oxidizing atmosphere of about 1000 ° C.
- the thickness of the gate insulating film 2 is, for example, 215 nm
- a first organic molecular layer 5 composed of alkanethiol molecules having 4 or more carbon atoms, which may have a substituent, is formed on the surface of the source electrode 3 and the surface of the drain electrode 4.
- the first organic molecular layer 5 is formed, for example, by immersing the laminate in an about 0.01 g / l 1-butane thiol solution using ethanol as a solvent for about 3 hours.
- the immersion time is not limited to the above, and can be appropriately set from about:! To about 6 hours.
- the first organic molecular layer 5 is formed on the surface (entire surface) of the source electrode 3 and the drain electrode 4 ((A) in FIG. 3).
- the 1_butanethiol molecule is not formed on the gate insulating film 2 because it binds to the electrode (metal) surface by a thiol bond.
- step 3 the first organic molecular layer 5 formed on each of the opposing side surfaces is removed by irradiating the opposing side surface of the source electrode 3 and the opposing side surface of the drain electrode 4 with ultraviolet light.
- the source electrode 3 is irradiated with about 2.3 mW / cm 2 of ultraviolet light for about 30 minutes using, for example, a metal mask 21 and through an ultraviolet transmission / visible absorption filter. Irradiate the opposite side surfaces of the drain electrode 4 and the opposite side surfaces of the drain electrode 4 (FIG. 3B).
- the metal mask 21 is removed, and the ultraviolet irradiated portion is washed with ethanol, whereby the first organic molecular layer 5 in the region irradiated with the ultraviolet light is removed ((B) in FIG. 3).
- the removal of thiol compound molecules bonded to a metal by irradiation with ultraviolet light is, for example, described in non-patent literature (J. Hang and JC Hemminger, J. Am. Chem. Soc. 1993, 115, 3342). -3343).
- step 4 the second organic molecular layer made of at least one molecule selected from the group consisting of p-thiotalesol molecules and thiophenol molecules is formed on the opposite side surfaces of the source electrode 3 and the opposite side surfaces of the drain electrode 4. 6 is formed respectively.
- step 4 the laminate is immersed in about 0.01 g / l p-tiocresol solution using ethanol as a solvent for about 3 hours. Then, the second organic molecular layer 6 is formed in the region where the first organic molecular layer 5 has been removed.
- the immersion time is not limited to the above, and can be appropriately set from about 1 to 6 hours. Since p-thiotalesol molecules are bonded to the electrode (metal) surface by thiol bonding, they are not formed on the gate insulating film 2 ((C) in FIG. 3).
- step 5 an organic semiconductor layer 7 covering the gate insulating film 2, the first organic molecular layer 5, and the second organic molecular layer 6 is laminated.
- step 5 for example, an atmosphere of 1. 4 X 10- 4 Pa pentacene on the surface of the laminate, 0.
- Deposition is about 50 nm at a rate of 03 nmZs. Thereby, the semiconductor layer 7 is formed.
- the organic FET of the present invention is produced.
- the organic FET of the present invention is manufactured using other materials and conditions. You may do it.
- the substrates la and lb two Si substrates doped with n-type impurities (arsenic) at a concentration of about 1 ⁇ 10 2 ° / cm 3 (also serving as the gate electrode) were prepared.
- a gate oxide film 2 was formed by forming a thermal oxide film 215nm on the surface of the substrates la and lb.
- a source electrode 3 and a drain electrode 4 were formed by depositing Cr in about lnm and Au in about 150nm in order through a mask.
- the substrate la is immersed in a 1-butanethiol solution of about 0. Olg / 1 using ethanol as a solvent for about 3 hours, so that 1-butanethiol is deposited on the surfaces of the source electrode 3 and the drain electrode 4.
- a first organic molecular layer 5 made of molecules was formed. The average thickness of the first organic molecular layer 5 was about 0.6 nm.
- the sample was irradiated with about 2.3 mW / cm 2 of ultraviolet light for about 30 minutes through an ultraviolet transmission 'visible absorption filter (HO340, U340) (Fig. 3 (B)). .
- This irradiation was performed especially on the side surfaces of the source electrode and the drain electrode facing each other.
- the first organic molecular layer 5 was removed only from the region irradiated with ultraviolet light by removing the metal mask 21 and washing with ethanol.
- the surface of the source electrode 3 and the drain electrode 4 and the first organic molecular layer 5 were immersed in an about 0. OlgZl P-thiotalesol solution using ethanol as a solvent for about 3 hours.
- a second organic molecular layer 6 made of p-thiotalesol molecules was formed on the surface portion from which the metal was removed (that is, the opposite side surfaces of the source electrode and the drain electrode).
- the substrate lb is immersed in about 0.01 g / l of p-titaresol solution using ethanol as a solvent for about 3 hours, so that the entire surface of the source electrode 104 and the drain electrode 105 is covered with p-thiol.
- An adsorbed molecular layer 701 (see Fig. 8) composed of talesol molecules was formed.
- the lb vacuum chamber under an atmosphere of about 1.
- 4 X 10- 4 Pa pentacene was approximately 50nm deposited at a rate of about 0. 03nm / s.
- the semiconductor layer 7 and the semiconductor layer 106 were formed.
- L which is the gate length
- W which is the gate width
- D was 200 ⁇ m
- Example 1 On current is 3.42 X 10- 5 A in Example 1 was a control example 1, 6.59 X 10- 6 A (
- id- Vgs was determined slope force et mobility
- the organic FET (Example 1) with an improved electrode interface has both on-state current and mobility improved about 5 times compared to the organic FET of the prior art (Reference Example 1).
- FIG. 5 shows the contact resistance of the organic FETs of Example 1 and Control Example 1.
- Example 1 In both Example 1 and Control Example 1, an approximate straight line is obtained to obtain an intercept on the vertical axis, and the value of the intercept on the vertical axis is the contact resistance.
- Example 1 a 2.03 X 10- 7 ⁇ in Example 1 was a control example 1, 1.18 X 10- 8 ⁇ . Therefore, it can be seen that the organic FET having improved electrode interface (Example 1) has a contact resistance reduced by about 1/5 than the organic FET of the prior art (Control Example 1).
- Example 1 and Control Example 1 are the same as the solution for forming the first organic molecular layer 5 except that a 1 ⁇ ntanthiol solution is used.
- Example 2 One using the substrate la was Example 2, and one using the substrate lb was Control Example 2.
- Example 1 The same as Example 1 and Control Example 1 except that a decanethiol solution was used as a solution for forming the first organic molecular layer 5.
- the one using the substrate la was Example 3 and the one using the substrate lb was Control Example 3.
- Example 1 The same as Example 1 and Control Example 1.
- Example 1 The same as Example 1 and Control Example 1 except that 1 butanethiol solution was used as the solution for forming the first organic molecular layer 5 and thiophenol solution was used as the solution for forming the second organic molecular layer 6. is there.
- the substrate la was used as Example 4, and the substrate lb was used as Control Example 4.
- Example 1 and Control Example 1 except that 1 pentanethiol solution was used as the solution for forming the first organic molecular layer 5 and thiophenol solution was used as the solution for forming the second organic molecular layer 6. .
- Example 5 One using the substrate la was Example 5, and one using the substrate lb was used as Control Example 5.
- Example 4 In Example 4, it was 2.97 ⁇ 10—, and in Control example 4, it was 1.79 ⁇ 10—.
- an embodiment 5 in 2.03 X 10- 5 A was a control example 5 in 9.27 X 10- 6 A.
- the comparison result of the mobility is as follows.
- the mobility was determined by the same method as that used in Example 1 and Control Example 1.
- Example 2 it was 0.1 lcm / Vs, and in Control Example 2, it was 0.052 cm / Vs.
- Example 3 it was 0.043 cm- 2 / Vs, and in Control Example 3, it was 0.021 cm- 2 / Vs.
- Comparative Example 1 In Comparative Example 1, it was 0.022 crrT 2 / Vs, and in Comparative Example 1, it was 0.023 cm- 2 / Vs.
- Example 4 In Example 4, it was 0.13 cm- 2 / Vs, and in Control Example 4, it was 0.069 cm- 2 / Vs.
- Example 5 In Example 5, it was 0.075 cm 2 / Vs, and in Control 5 it was 0.034 cm 2 / Vs.
- Example 2 7.36x10- 6 ⁇ was in Control Example 2 3.69x10- 7 ⁇ .
- Example 3 3.66x10- 7 ⁇ , was in Control Example 3 1.25x10- 8 ⁇ .
- Comparative Example 1 1.05x10- 8 ⁇ , were compared in Control Example 1 5.58x10- 7 ⁇ .
- Example 4 6.77x10- 6 ⁇ , was in Control Example 4 1.18x10- 7 ⁇ .
- Example 5 1.27x10- 7 ⁇ , was in Control Example 5 3.55x10- 7 ⁇ .
- the organic FET of Comparative Example 1 has both on-state current and mobility reduced by about 5%, and the contact resistance is about twice that of the conventional technology (Comparative Control Example 1). Increased.
- FIG. 6 shows the ratio of on-current and mobility to Comparative Examples 1 to 3 in Examples 1 to 3 and Comparative Example
- FIG. 7 is a diagram showing the control examples of Examples:! To 3: the ratio of contact resistance to! To 3 and the ratio of contact resistance of Comparative Example 1 to Comparative Example 1.
- the solution for forming the first organic molecular layer must be a solution of alkanethiol having a chain length of 1_butanethiol (carbon number 4) or more.
- the solution for forming the second organic molecular layer is at least one of the ⁇ -thiotalesol solution and the thiophenol solution, and is good if it is at least one of them.
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- Thin Film Transistor (AREA)
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JP2009218244A (ja) * | 2008-03-07 | 2009-09-24 | Hitachi Ltd | 有機薄膜トランジスタおよびその製造方法 |
WO2009154145A1 (ja) * | 2008-06-19 | 2009-12-23 | ソニー株式会社 | 機能性分子素子及びその製造方法、並びに機能性分子装置 |
JP2010219375A (ja) * | 2009-03-18 | 2010-09-30 | Ricoh Co Ltd | 有機トランジスタアクティブ基板、有機トランジスタアクティブ基板の製造方法および有機トランジスタアクティブ基板を用いた電気泳動ディスプレイ |
JP2012074504A (ja) * | 2010-09-28 | 2012-04-12 | Toppan Printing Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP2012234923A (ja) * | 2011-04-28 | 2012-11-29 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板の製造方法およびトップゲート構造薄膜トランジスタ基板 |
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WO2009005768A1 (en) * | 2007-06-28 | 2009-01-08 | Parkervision, Inc. | Systems and methods of rf power transmission, modulation, and amplification |
JP5135073B2 (ja) * | 2008-06-18 | 2013-01-30 | 出光興産株式会社 | 有機薄膜トランジスタ |
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JP2005093542A (ja) * | 2003-09-12 | 2005-04-07 | Hitachi Ltd | 半導体装置およびその作製方法 |
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JP2004288836A (ja) * | 2003-03-20 | 2004-10-14 | Toshiba Corp | 有機薄膜トランジスタおよびその製造方法 |
JP2005093542A (ja) * | 2003-09-12 | 2005-04-07 | Hitachi Ltd | 半導体装置およびその作製方法 |
JP2006148131A (ja) * | 2004-11-23 | 2006-06-08 | Samsung Sdi Co Ltd | 有機薄膜トランジスタ、その製造方法、及びその有機薄膜トランジスタを含む平板表示装置 |
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JP2009218244A (ja) * | 2008-03-07 | 2009-09-24 | Hitachi Ltd | 有機薄膜トランジスタおよびその製造方法 |
WO2009154145A1 (ja) * | 2008-06-19 | 2009-12-23 | ソニー株式会社 | 機能性分子素子及びその製造方法、並びに機能性分子装置 |
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JP2010219375A (ja) * | 2009-03-18 | 2010-09-30 | Ricoh Co Ltd | 有機トランジスタアクティブ基板、有機トランジスタアクティブ基板の製造方法および有機トランジスタアクティブ基板を用いた電気泳動ディスプレイ |
JP2012074504A (ja) * | 2010-09-28 | 2012-04-12 | Toppan Printing Co Ltd | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
JP2012234923A (ja) * | 2011-04-28 | 2012-11-29 | Dainippon Printing Co Ltd | 薄膜トランジスタ基板の製造方法およびトップゲート構造薄膜トランジスタ基板 |
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