WO2006080338A1 - 高耐熱合成高分子化合物及び高耐電圧半導体装置 - Google Patents

高耐熱合成高分子化合物及び高耐電圧半導体装置 Download PDF

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Publication number
WO2006080338A1
WO2006080338A1 PCT/JP2006/301122 JP2006301122W WO2006080338A1 WO 2006080338 A1 WO2006080338 A1 WO 2006080338A1 JP 2006301122 W JP2006301122 W JP 2006301122W WO 2006080338 A1 WO2006080338 A1 WO 2006080338A1
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WIPO (PCT)
Prior art keywords
organosilicon polymer
semiconductor device
organosilicon
polymer compound
synthetic polymer
Prior art date
Application number
PCT/JP2006/301122
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English (en)
French (fr)
Inventor
Yoshitaka Sugawara
Yoshikazu Shoji
Original Assignee
The Kansai Electric Power Co., Inc.
Adeka Corporation
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Filing date
Publication date
Application filed by The Kansai Electric Power Co., Inc., Adeka Corporation filed Critical The Kansai Electric Power Co., Inc.
Priority to EP06712317A priority Critical patent/EP1857488A4/en
Publication of WO2006080338A1 publication Critical patent/WO2006080338A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
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    • H01L23/3135—Double encapsulation or coating and encapsulation
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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    • C08G77/04—Polysiloxanes
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    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
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  • the present invention relates to a synthetic polymer compound having high heat resistance and a high withstand voltage power semiconductor device that is covered with the synthetic polymer compound and has high heat resistance and good heat dissipation. is there.
  • SiC silicon carbide
  • Non-Patent Document 1 As an example of a conventional high heat resistance and high withstand voltage power semiconductor device using SiC, the following SiC diode element force is disclosed in Non-Patent Document 1 below.
  • a pn junction for injecting charges is formed on the SiC substrate by an epitaxial film using an epitaxial growth technique. Further, after the epitaxial film in the end region of the substrate is removed by mesa etching, a termination portion for relaxing the electric field is formed by ion implantation.
  • the p-type epitaxial layer having a thickness of 0.7 / zm is removed by a mesa etching process having a depth of about 1 ⁇ m, and an inorganic film such as silicon dioxide having a thickness of 0.4 / zm is formed. It is formed as a passivation film. As a result, a SiC diode element having a high withstand voltage of 12 kV to 19 kV can be obtained.
  • Fig. 6 shows a conventional SiC diode device that can be easily incorporated into various devices.

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Abstract

　ワイドギャップ半導体素子の外面を、合成高分子化合物で被覆する。この合成高分子化合物は、シロキサン結合（Ｓｉ－Ｏ－Ｓｉ結合）による橋かけ構造を有する１種以上の第１有機珪素ポリマーと、シロキサン結合による線状連結構造を有する１種以上の第２有機珪素ポリマーとをシロキサン結合によって連結させてなる第３有機珪素ポリマーを、付加反応により生成される共有結合によって、複数連結して、形成しており、三次元の立体構造を有している。この合成高分子化合物には、高い熱伝導性を有する絶縁性セラミックスの微粒子を混合するのが、好ましい。

Description

明 細 書
高耐熱合成高分子化合物及び高耐電圧半導体装置
技術分野
[0001] 本発明は、耐熱性が高い合成高分子化合物と、その合成高分子化合物によって被 覆され、耐熱性が高ぐ熱放散性が良い、高耐電圧パワー半導体装置とに、関するも のである。
背景技術
[0002] 比較的大きな電力を扱うパワー半導体装置では、大電力通電時に発生する熱によ つて半導体装置が高温になるので、高い耐熱性が要求される。現状のパワー半導体 装置のほとんどは、シリコン (Si)パワー半導体装置であるが、 Siパワー半導体装置の 耐熱限界温度は、通常、 150°Cである。現在、 Siパワー半導体装置の耐熱限界温度 を 200°C程度に高くする試み力 進められている。
一方、炭化珪素（以下、 SiCと記す)などのワイドギャップ半導体材料を用いてパヮ 一半導体装置を構成することが、試みられている。 SiCなどのワイドギャップ半導体材 料は、 Siに比べてエネルギーギャップが大きぐ絶縁破壊電界強度も約 1桁大きいな どの、優れた物理特性を有しているので、高耐熱且つ高耐電圧のパワー半導体装置 に用いるのに、好適である。
[0003] SiCを用いた従来の高耐熱 '高耐電圧のパワー半導体装置の例としては、以下に 示す SiCダイオード素子力 下記の非特許文献 1に開示されている。この SiCダイォ ード素子では、電荷を注入する pn接合を、 SiC基板上に、ェピタキシャル成長技術 によるェピタキシャル膜によって、形成する。また、基板の端部領域のェピタキシャル 膜を、メサエッチングによって除去した後、電界を緩和するターミネーシヨン部を、ィォ ン打ち込みによって形成する。具体的には、深さ約 1 μ mのメサエッチング処理によ つて厚さ 0. 7 /z mの p型ェピタキシャル層を除去し、厚さ 0. 4 /z mの二酸化シリコンな どの無機物膜をパッシベーシヨン膜として形成している。これにより、 12kV〜19kV の高耐電圧を有する SiCダイオード素子が得られる。
[0004] 図 6は、各種機器に組み込むのに便利な SiCダイオード装置を、従来の SiCダイォ

Claims

請求の範囲
[1] 少なくとも 1種の第 1有機珪素ポリマーと少なくとも 1種の第 2有機珪素ポリマーとを シロキサン結合によって連結してなる第 3有機珪素ポリマーを、付加反応により生成 される共有結合によって、複数連結して、構成されており、
三次元の立体構造を有しており、
第 1有機珪素ポリマーが、シロキサン結合による橋かけ構造を有しており、 第 2有機珪素ポリマーが、シロキサン結合による線状連結構造を有しており、 第 3有機珪素ポリマーが、 2万〜 80万の分子量を有して 、ることを特徴とする高耐 熱合成高分子化合物。
[2] 更に、高 、熱伝導性を有する絶縁性セラミックスの微粒子を含有して 、る、請求項
1記載の高耐熱合成高分子化合物。
[3] 絶縁性セラミックスの微粒子を 20%〜80%の体積充填率で含有している、請求項
2記載の高耐熱合成高分子化合物。
[4] 第 1有機珪素ポリマー力 ポリフエ-ルシルセスキォキサン、ポリメチルシルセスキォ キサン、ポリメチルフエ二ルシルセスキォキサン、ポリェチルシルセスキォキサン、及 びポリプロビルシルセスキォキサン力もなる群力も選択された少なくとも 1種であり、 第 2有機珪素ポリマー力 ポリジメチルシロキサン、ポリジェチルシロキサン、ポリジ フエ-ルシロキサン、及びポリメチルフエ-ルシロキサンからなる群から選択された少 なくとも 1種である、請求項 1記載の高耐熱合成高分子化合物。
[5] 第 1有機珪素ポリマーの分子量が、第 2有機珪素ポリマーの分子量よりも小さい、請 求項 1記載の高耐熱合成高分子化合物。
[6] 絶縁性セラミックス力 窒化アルミニウム、酸ィ匕ベリリウム、アルミナ、及び多結晶 Si
Cからなる群から選択された少なくとも 1種である、請求項 2記載の高耐熱合成高分 子化合物。
[7] 半導体素子と、半導体素子を外部の機器に電気的に接続するための電気的接続 部の少なくとも一部分とを、被覆する合成高分子化合物を、有する半導体装置にお いて、
前記合成高分子化合物が、少なくとも 1種の第 1有機珪素ポリマーと少なくとも 1種 の第 2有機珪素ポリマーとをシロキサン結合によって連結してなる第 3有機珪素ポリマ 一を、付加反応により生成される共有結合によって、複数連結して、構成されており、 且つ、三次元の立体構造を有しており、
第 1有機珪素ポリマーが、シロキサン結合による橋かけ構造を有しており、 第 2有機珪素ポリマーが、シロキサン結合による線状連結構造を有しており、 第 3有機珪素ポリマーが、 2万〜 80万の分子量を有していることを特徴とする半導 体装置。
[8] 前記合成高分子化合物が、高 、熱伝導性を有する絶縁性セラミックスの微粒子を 1
5%以上の体積充填率で含有して 、る、請求項 7記載の半導体装置。
[9] 前記合成高分子化合物が、高 、熱伝導性を有する絶縁性セラミックスの微粒子を 2
0%から 80%の体積充填率で含有して 、る、請求項 7記載の半導体装置。
[10] 絶縁性セラミックス力 窒化アルミニウム、酸ィ匕ベリリウム、アルミナ、及び多結晶 Si
C力 なる群力 選択された少なくとも 1種である、請求項 8又は 9に記載の半導体装 置。
[11] 半導体素子が、ワイドギャップ半導体素子であって、炭化珪素を用いた SiC半導体 素子及び窒化ガリウムを用いた GaN半導体素子のいずれか一方であり、
第 1有機珪素ポリマー力 ポリフエ-ルシルセスキォキサン、ポリメチルシルセスキォ キサン、ポリメチルフエ二ルシルセスキォキサン、ポリェチルシルセスキォキサン、及 びポリプロビルシルセスキォキサン力もなる群力も選択された少なくとも 1種であり、 第 2有機珪素ポリマー力 ポリジメチルシロキサン、ポリジェチルシロキサン、ポリジ フエ-ルシロキサン、及びポリメチルフエ-ルシロキサンからなる群から選択された少 なくとも 1種である、請求項 7記載の半導体装置。
[12] 半導体素子が、ワイドギャップ半導体受光素子及びワイドギャップ半導体発光素子 のいずれか一方又は両方を組み合わせたものであり、
第 1有機珪素ポリマー力 ポリフエ-ルシルセスキォキサン、ポリメチルシルセスキォ キサン、ポリメチルフエ二ルシルセスキォキサン、ポリェチルシルセスキォキサン、及 びポリプロビルシルセスキォキサン力もなる群力も選択された少なくとも 1種であり、 第 2有機珪素ポリマー力 ポリジメチルシロキサン、ポリジェチルシロキサン、ポリジ フエ-ルシロキサン、及びポリメチルフエ-ルシロキサンからなる群から選択された少 なくとも 1種である、請求項 7記載の半導体装置。
[13] 第 1有機珪素ポリマーの分子量が、第 2有機珪素ポリマーの分子量よりも小さい、請 求項 11又は 12に記載の半導体装置。
[14] 熱伝導性の基板の上に取付けられた少なくとも 1つの半導体素子と、
半導体素子を外部の機器に電気的に接続するための電気的接続部と、 半導体素子と、電気的接続部の少なくとも一部とを、被覆する、第 1合成高分子化 合物と、
第 1合成高分子化合物によって被覆された半導体素子及び電気的接続部を、収納 するように、基板と共に構成された容器と、
容器内の隙間に充填された第 2合成高分子化合物と、
電気的接続部に接続されて、容器の外へ導出された、外部接続端子と、を備えて おり、
第 1合成高分子化合物が、少なくとも 1種の第 1有機珪素ポリマーと少なくとも 1種の 第 2有機珪素ポリマーとをシロキサン結合によって連結してなる第 3有機珪素ポリマ 一を、付加反応により生成される共有結合によって、複数連結して、構成されており、 また、三次元の立体構造を有しており、更に、高い熱伝導性を有する絶縁性セラミツ タスの微粒子を含有しており、
第 1有機珪素ポリマーが、シロキサン結合による橋かけ構造を有しており、 第 2有機珪素ポリマーが、シロキサン結合による線状連結構造を有しており、 第 3有機珪素ポリマーが、 2万〜 80万の分子量を有しており、
第 2合成高分子化合物が、少なくとも 1種の第 4有機珪素ポリマーと少なくとも 1種の 第 5有機珪素ポリマーとをシロキサン結合によって連結してなる第 6有機珪素ポリマ 一を、付加反応により生成される共有結合によって、複数連結して、構成されており、 また、三次元の立体構造を有しており、更に、高い熱伝導性を有する絶縁性セラミツ タスの微粒子を含有しており、
第 4有機珪素ポリマーが、シロキサン結合による橋かけ構造を有しており、 第 5有機珪素ポリマーが、シロキサン結合による線状連結構造を有しており、 第 6有機珪素ポリマーが、 2万〜 80万の分子量を有して 、ることを特徴とする半導 体装置。
[15] 第 2合成高分子化合物が、第 1合成高分子化合物よりも高い柔軟性を有している、 請求項 14記載の半導体装置。
[16] 半導体素子が、ワイドギャップ半導体素子であって、炭化珪素を用いた SiC半導体 素子及び窒化ガリウムを用いた GaN半導体素子のいずれか一方であり、
第 1有機珪素ポリマー及び第 4有機珪素ポリマーが、ポリフエ-ルシルセスキォキサ ン、ポリメチルシルセスキォキサン、ポリメチルフエ二ルシルセスキォキサン、ポリェチ ルシルセスキォキサン、及びポリプロビルシルセスキォキサンからなる群力も選択され た少なくとも 1種であり、
第 2有機珪素ポリマー及び第 5有機珪素ポリマーが、ポリジメチルシロキサン、ポリ ジェチルシロキサン、ポリジフエ二ルシロキサン、及びポリメチルフエニルシロキサンか らなる群力 選択された少なくとも 1種である、請求項 14記載の半導体装置。
[17] 半導体素子が、 SiC— GTO素子及び SiCダイオード素子であり、
両素子が、容器内において電気的接続部によって逆並列に接続されている、請求 項 14記載の半導体装置。
PCT/JP2006/301122 2005-01-27 2006-01-25 高耐熱合成高分子化合物及び高耐電圧半導体装置 WO2006080338A1 (ja)

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