WO2006059627A1 - 化学機械研磨用スラリー、無機粒子被覆型複合粒子、その製造方法、化学機械研磨方法及び電子デバイスの製造方法 - Google Patents
化学機械研磨用スラリー、無機粒子被覆型複合粒子、その製造方法、化学機械研磨方法及び電子デバイスの製造方法 Download PDFInfo
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- WO2006059627A1 WO2006059627A1 PCT/JP2005/021963 JP2005021963W WO2006059627A1 WO 2006059627 A1 WO2006059627 A1 WO 2006059627A1 JP 2005021963 W JP2005021963 W JP 2005021963W WO 2006059627 A1 WO2006059627 A1 WO 2006059627A1
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- Prior art keywords
- particles
- slurry
- chemical mechanical
- mechanical polishing
- inorganic
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 149
- 239000002002 slurry Substances 0.000 title claims abstract description 93
- 239000010954 inorganic particle Substances 0.000 title claims abstract description 90
- 239000011246 composite particle Substances 0.000 title claims abstract description 78
- 239000000126 substance Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000011248 coating agent Substances 0.000 title abstract description 3
- 238000000576 coating method Methods 0.000 title abstract description 3
- 238000002360 preparation method Methods 0.000 title description 3
- 239000002245 particle Substances 0.000 claims abstract description 95
- 239000006061 abrasive grain Substances 0.000 claims abstract description 37
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000010008 shearing Methods 0.000 claims abstract description 6
- 239000011812 mixed powder Substances 0.000 claims abstract description 5
- 239000002253 acid Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229920002845 Poly(methacrylic acid) Polymers 0.000 claims description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims 1
- 150000007530 organic bases Chemical class 0.000 abstract 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 27
- 239000004926 polymethyl methacrylate Substances 0.000 description 27
- 230000000052 comparative effect Effects 0.000 description 24
- -1 diallyl cyanide Chemical compound 0.000 description 22
- 239000003795 chemical substances by application Substances 0.000 description 15
- 239000011229 interlayer Substances 0.000 description 14
- 239000002131 composite material Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000002270 dispersing agent Substances 0.000 description 9
- 239000011146 organic particle Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-N glycine betaine Chemical compound C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- WPKYZIPODULRBM-UHFFFAOYSA-N azane;prop-2-enoic acid Chemical compound N.OC(=O)C=C WPKYZIPODULRBM-UHFFFAOYSA-N 0.000 description 3
- 229910000420 cerium oxide Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 235000014113 dietary fatty acids Nutrition 0.000 description 3
- 238000000635 electron micrograph Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000000194 fatty acid Substances 0.000 description 3
- 229930195729 fatty acid Natural products 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- HGINCPLSRVDWNT-UHFFFAOYSA-N Acrolein Chemical compound C=CC=O HGINCPLSRVDWNT-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000005215 alkyl ethers Chemical class 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 239000011242 organic-inorganic particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- AMSDWLOANMAILF-UHFFFAOYSA-O 2-(1h-imidazol-3-ium-3-yl)ethanol Chemical compound OCC[NH+]1C=CN=C1 AMSDWLOANMAILF-UHFFFAOYSA-O 0.000 description 1
- RZRILSWMGXWSJY-UHFFFAOYSA-N 2-[bis(2-hydroxyethyl)amino]ethanol;sulfuric acid Chemical compound OS(O)(=O)=O.OCCN(CCO)CCO RZRILSWMGXWSJY-UHFFFAOYSA-N 0.000 description 1
- HVYJSOSGTDINLW-UHFFFAOYSA-N 2-[dimethyl(octadecyl)azaniumyl]acetate Chemical compound CCCCCCCCCCCCCCCCCC[N+](C)(C)CC([O-])=O HVYJSOSGTDINLW-UHFFFAOYSA-N 0.000 description 1
- ADSOSINJPNKUJK-UHFFFAOYSA-N 2-butylpyridine Chemical compound CCCCC1=CC=CC=N1 ADSOSINJPNKUJK-UHFFFAOYSA-N 0.000 description 1
- MUHFRORXWCGZGE-KTKRTIGZSA-N 2-hydroxyethyl (z)-octadec-9-enoate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OCCO MUHFRORXWCGZGE-KTKRTIGZSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- BXGYBSJAZFGIPX-UHFFFAOYSA-N 2-pyridin-2-ylethanol Chemical compound OCCC1=CC=CC=N1 BXGYBSJAZFGIPX-UHFFFAOYSA-N 0.000 description 1
- DWPYQDGDWBKJQL-UHFFFAOYSA-N 2-pyridin-4-ylethanol Chemical compound OCCC1=CC=NC=C1 DWPYQDGDWBKJQL-UHFFFAOYSA-N 0.000 description 1
- UIHSTNXWLQMGGF-UHFFFAOYSA-N 3,3,5-trimethylpyrrolidin-2-one Chemical compound CC1CC(C)(C)C(=O)N1 UIHSTNXWLQMGGF-UHFFFAOYSA-N 0.000 description 1
- VWIIJDNADIEEDB-UHFFFAOYSA-N 3-methyl-1,3-oxazolidin-2-one Chemical compound CN1CCOC1=O VWIIJDNADIEEDB-UHFFFAOYSA-N 0.000 description 1
- QCQCHGYLTSGIGX-GHXANHINSA-N 4-[[(3ar,5ar,5br,7ar,9s,11ar,11br,13as)-5a,5b,8,8,11a-pentamethyl-3a-[(5-methylpyridine-3-carbonyl)amino]-2-oxo-1-propan-2-yl-4,5,6,7,7a,9,10,11,11b,12,13,13a-dodecahydro-3h-cyclopenta[a]chrysen-9-yl]oxy]-2,2-dimethyl-4-oxobutanoic acid Chemical compound N([C@@]12CC[C@@]3(C)[C@]4(C)CC[C@H]5C(C)(C)[C@@H](OC(=O)CC(C)(C)C(O)=O)CC[C@]5(C)[C@H]4CC[C@@H]3C1=C(C(C2)=O)C(C)C)C(=O)C1=CN=CC(C)=C1 QCQCHGYLTSGIGX-GHXANHINSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- FPVVYTCTZKCSOJ-UHFFFAOYSA-N Ethylene glycol distearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCCOC(=O)CCCCCCCCCCCCCCCCC FPVVYTCTZKCSOJ-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920001213 Polysorbate 20 Polymers 0.000 description 1
- 229920001214 Polysorbate 60 Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- SKZKKFZAGNVIMN-UHFFFAOYSA-N Salicilamide Chemical compound NC(=O)C1=CC=CC=C1O SKZKKFZAGNVIMN-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000004147 Sorbitan trioleate Substances 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 150000001241 acetals Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- HZADGDCWYTUEDJ-UHFFFAOYSA-M cerium(3+);hydroxide Chemical compound [OH-].[Ce+3] HZADGDCWYTUEDJ-UHFFFAOYSA-M 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229940047583 cetamide Drugs 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012674 dispersion polymerization Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 1
- JZKFHQMONDVVNF-UHFFFAOYSA-N dodecyl sulfate;tris(2-hydroxyethyl)azanium Chemical compound OCCN(CCO)CCO.CCCCCCCCCCCCOS(O)(=O)=O JZKFHQMONDVVNF-UHFFFAOYSA-N 0.000 description 1
- SYELZBGXAIXKHU-UHFFFAOYSA-N dodecyldimethylamine N-oxide Chemical compound CCCCCCCCCCCC[N+](C)(C)[O-] SYELZBGXAIXKHU-UHFFFAOYSA-N 0.000 description 1
- 238000010556 emulsion polymerization method Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- YVIVRJLWYJGJTJ-UHFFFAOYSA-N gamma-Valerolactam Chemical compound CC1CCC(=O)N1 YVIVRJLWYJGJTJ-UHFFFAOYSA-N 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229940100608 glycol distearate Drugs 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229940070765 laurate Drugs 0.000 description 1
- 229940094506 lauryl betaine Drugs 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(iii) oxide Chemical compound O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- IDVHWCVIBYZUKP-UHFFFAOYSA-N n-acetylbutanamide Chemical compound CCCC(=O)NC(C)=O IDVHWCVIBYZUKP-UHFFFAOYSA-N 0.000 description 1
- NWVWTMMFFAXYFD-UHFFFAOYSA-N n-butyl-n,2-dimethylpropanamide Chemical compound CCCCN(C)C(=O)C(C)C NWVWTMMFFAXYFD-UHFFFAOYSA-N 0.000 description 1
- DVEKCXOJTLDBFE-UHFFFAOYSA-N n-dodecyl-n,n-dimethylglycinate Chemical compound CCCCCCCCCCCC[N+](C)(C)CC([O-])=O DVEKCXOJTLDBFE-UHFFFAOYSA-N 0.000 description 1
- DSENQNLOVPYEKP-UHFFFAOYSA-N n-ethenyl-n-methylpropanamide Chemical compound CCC(=O)N(C)C=C DSENQNLOVPYEKP-UHFFFAOYSA-N 0.000 description 1
- PVOUZBXBJLSFDE-UHFFFAOYSA-N n-methyl-1-phenylpentan-1-amine Chemical compound CCCCC(NC)C1=CC=CC=C1 PVOUZBXBJLSFDE-UHFFFAOYSA-N 0.000 description 1
- IWNOLSWCBOWZCW-UHFFFAOYSA-N n-propanoylbutanamide Chemical compound CCCC(=O)NC(=O)CC IWNOLSWCBOWZCW-UHFFFAOYSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- UPHWVVKYDQHTCF-UHFFFAOYSA-N octadecylazanium;acetate Chemical compound CC(O)=O.CCCCCCCCCCCCCCCCCCN UPHWVVKYDQHTCF-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000259 polyoxyethylene lauryl ether Polymers 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 235000010486 polyoxyethylene sorbitan monolaurate Nutrition 0.000 description 1
- 239000000244 polyoxyethylene sorbitan monooleate Substances 0.000 description 1
- 235000010482 polyoxyethylene sorbitan monooleate Nutrition 0.000 description 1
- 235000010483 polyoxyethylene sorbitan monopalmitate Nutrition 0.000 description 1
- 239000000249 polyoxyethylene sorbitan monopalmitate Substances 0.000 description 1
- 239000001818 polyoxyethylene sorbitan monostearate Substances 0.000 description 1
- 235000010989 polyoxyethylene sorbitan monostearate Nutrition 0.000 description 1
- 239000001816 polyoxyethylene sorbitan tristearate Substances 0.000 description 1
- 235000010988 polyoxyethylene sorbitan tristearate Nutrition 0.000 description 1
- 229920000053 polysorbate 80 Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- UBQKCCHYAOITMY-UHFFFAOYSA-N pyridin-2-ol Chemical compound OC1=CC=CC=N1 UBQKCCHYAOITMY-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 235000019337 sorbitan trioleate Nutrition 0.000 description 1
- 229960000391 sorbitan trioleate Drugs 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Substances C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- the present invention relates to a slurry for chemical mechanical polishing, inorganic particle-coated composite particles, a method for producing the same, a method for chemical mechanical polishing, and a method for producing an electronic device, and in particular, a chemical machine during a process for producing an electronic device such as a semiconductor device.
- CMP slurry applied to the polishing (CMP) process it relates to the reduction of scratches on the material to be polished and the improvement of processing efficiency by high-speed polishing.
- CMP Chemical mechanical polishing
- the barrel is dispersed in an alkali-based solution and polished using a chemical etching effect simultaneously with mechanical polishing with silica.
- ceria acidic cerium CeO particles are used for interlayer insulation film (acidic silica
- Patent Document 1 Japanese Patent Application Laid-Open No. 2001-152135
- Patent Document 2 Japanese Patent Laid-Open No. 2003-277730
- the present invention obtains a low scratch property of an object to be polished by the CMP process, maintains a sufficient polishing rate, and does not reduce the processing efficiency.
- the present invention provides a particle-coated composite particle, a production method thereof, a chemical mechanical polishing method, and an electronic device production method.
- a slurry for chemical mechanical polishing which is an inorganic particle-coated composite particle formed by bonding and having a pH force of ⁇ 8 of the chemical mechanical polishing slurry.
- Abrasive grains (A), water (B), and a water-soluble organic compound (C) are added to the mixed powder of organic mother particles and inorganic particles as abrasive grains (A). It is characterized by using inorganic particle-coated composite particles formed by applying pressure and shearing force to melt the surface layer of the organic mother particles. Chemical mechanical polishing slurry.
- the concentration of the abrasive grains (A) is 0.2 to 10 wt% with respect to the total amount of water (B) and the cannonballs (A). Characteristic chemical mechanical polishing slurry.
- the slurry can further contain inorganic particles, which can be the same as those used to produce the composite particles.
- a slurry for chemical mechanical polishing characterized in that, in the chemical mechanical polishing slurry, the organic mother particles are polymethyl methacrylate particles, and the inorganic particles are acid cerium particles.
- the amount of the water-soluble organic compound (C) relative to the water-soluble organic compound (C) and water (B) is 0.05 to 5 wt.
- the water-soluble organic compound (C) is a poly (meth) acrylic acid ammonium salt. slurry.
- An inorganic particle-coated composite particle used for a slurry for chemical mechanical polishing characterized in that inorganic particles are aggregated and bonded to the surface of the organic mother particle by mechanical bonding.
- the coverage of inorganic particles on the surface of the organic mother particles is preferably 20% or more, particularly 25 to 50%.
- the inorganic particles used in the slurry for chemical mechanical polishing wherein the average particle diameter of the abrasive grains (A) is 0.5 to 10 m in addition to the inorganic particle-coated composite particles. Coated composite particles.
- Abrasive grains (A), water (B), and a water-soluble organic compound (C), and the abrasive grains (A) are aggregated on the surface of the organic mother particles as inorganic particles.
- Inorganic particle-coated composite particles formed by bonding, and in contact with the material to be polished within the range of pH power of the chemical mechanical polishing slurry to 8 A chemical mechanical polishing method characterized by performing chemical polishing.
- a method for producing an electronic device comprising: formed inorganic particle-coated composite particles, wherein the chemical mechanical polishing slurry is contact-mechanically polished with a material to be polished within a pH range of ⁇ 8.
- the present invention relates to a slurry for chemical mechanical polishing containing abrasive grains (A), water (B), and a water-soluble organic compound (C), and the abrasive grains (A) are composed of organic matrix particles and inorganic particles.
- abrasive grains A
- water B
- a water-soluble organic compound C
- the abrasive grains (A) are composed of organic matrix particles and inorganic particles.
- FIG. 1 is a schematic cross-sectional view of an inorganic particle-coated composite particle according to the present invention.
- FIG. 2 Electron micrograph of composite particles by conventional method.
- FIG. 3 is an electron micrograph of inorganic particle-coated composite particles according to the present invention.
- the inorganic composite particles of the present invention are advantageously produced by mixing a mixture of organic polymer particles and inorganic particles having a smaller particle diameter while applying mechanical shearing force.
- the composite inorganic particles produced in this way are considered to have the inorganic particles 1 mechanically bonded to the surfaces of the organic mother particles 2 as schematically shown in FIG.
- the inorganic particles of the composite inorganic particles of the present invention are aggregated and bonded to the organic mother particles. This point is the electrostatically bonded composite particles disclosed in Patent Document 1 (Fig. This is fundamentally different from (see 2).
- FIG. 2 is an electron micrograph of composite particles in which organic mother particles and inorganic particles are electrostatically bonded
- FIG. 3 is a microphotograph of composite particles according to the present invention.
- the inorganic particles are present as dots and are not agglomerated.
- the composite particles of the present invention the inorganic particles are aggregated and spread as a surface on the surface of the organic mother particles.
- the inorganic particles in the present invention are present on the surface of the organic mother particles, the above cannot be determined, but as shown in FIG. 1, some of the inorganic particles are organic mother particles. It is also conceivable that it is embedded in the particles. However, the possibility of binding to the surface of organic matrix particles cannot be denied. From the results of comparative experiments of chemical mechanical polishing slurries using the composite particles shown in FIGS. 2 and 3 described later, the composite particles of the present invention maintain a stable composite state in the chemical mechanical polishing slurry. Since the composite particles in FIG. 2 that are merely electrostatically bonded do not perform their functions in actual chemical mechanical polishing, they are electrostatically bonded to the above-described bonded state of the composite particles of the present invention. It is presumed that a difference from the composite particles due to.
- Examples of the organic mother particles constituting the composite particles of the abrasive grains (A) include polymethyl methacrylate particles, polystyrene particles, and copolymer particles thereof. Cross-linked particles are preferred because the organic mother particles need some heat resistance temperature and hardness.
- Examples of the method for producing the organic mother particles include a soap-free emulsion polymerization method and a dispersion polymerization method, and monodisperse particles produced thereby are more preferable.
- the size of the organic mother particles is from 0.5 to: LO / zm is preferred. If the particle size is less than 0.5 ⁇ m, it is difficult to complex inorganic particles, and there is a problem that the polishing rate is greatly reduced. .
- the inorganic particles constituting the composite particles of the abrasive grains (A) include acid cerium (CeO), acid
- the cerium oxide abrasive has excellent polishing ability for the interlayer insulating film (silicon oxide), and the polishing of the silicon nitride (Si N) film and the interlayer insulating film, which are the stubber films in the STI-CMP process.
- polishing selectivity SiO 2 / Si N polishing rate ratio
- the average particle size of the inorganic particles is in the range of 10 to 500 nm. If the average particle size is 10 nm or less, there is a problem that the polishing rate is lowered. If the average particle size of inorganic particles is 500nm or more When it exists, since the scratch property with respect to a to-be-polished object will become large, it is not preferable.
- there are a gas phase method, a liquid phase method, and the like as methods for producing inorganic particles but the composite particles that are abrasive grains used in the present invention are a dry composite method. Particles produced by are preferred. The higher the surface coverage of the inorganic particles relative to the organic mother particles, the faster the polishing is possible, and the surface coverage is preferably 20% or more.
- the concentration of the composite particle cantilever is 0.2 to LO weight% with respect to the total amount of water (B) and the cannonball (A), and a polishing rate sufficient for 0.2 weight% or less is sufficient. Cannot be obtained.
- the content is 10% by weight or more, there is a problem that the dispersion state of the slurry becomes very bad. More preferably, the fine particle concentration of 0.5 to 5.0% by weight is good.
- the water-soluble organic compound (C) is adsorbed (adhered to the inorganic insulating film) when the CMP slurry comes into contact with an interlayer insulating film that is a material to be polished, such as a silicon oxide film or a silicon nitride film.
- an interlayer insulating film that is a material to be polished
- a water-soluble polymer or a surfactant is preferably used.
- the water-soluble organic compound is adsorbed when the CMP polishing agent comes into contact with the inorganic insulating film that is the film to be polished, such as silicon oxide film or silicon nitride film, and desorbs as the polishing surface pressure increases. I prefer to be something.
- water-soluble organic compounds include the following.
- polystyrene resin polystyrene resin
- the upper limit of the weight-average molecular weight of the water-soluble organic compound is preferably 500 or more, but is preferably 50,000 or less in view of solubility.
- the surfactant include nonionic surfactants and anionic surfactants, and those containing no alkali metal are particularly preferable.
- polyethylene glycol-type nonionic surfactants glycols, glycerin fatty acid esters, sorbite fatty acid esters, fatty acid alcohol amides, alcohol sulfate esters, alkyl ether sulfate esters, alkylbenzene sulfonates, alkyl phosphorus At least one selected from acid esters is more preferable.
- the addition amount of the water-soluble organic compound is preferably in the range of 0.05 to L0 parts by weight with respect to 100 parts by weight of the CMP slurry. If the addition amount is too small, the addition effect may not appear, and if it is too much, the polishing rate may decrease.
- a dispersant, a pH adjuster, or the like may be added to the chemical mechanical polishing slurry.
- the dispersant needs to be selected according to the inorganic particles constituting the composite particles. For example, in the case where cerium oxide is used for the inorganic particles, polyacrylic acid ammonium salt or acrylic copolymer as the copolymer component is used. It is preferable to add a polymer dispersant containing an acid ammonium salt.
- lauryl sulfate triethanolamine lauryl sulfate ammonium
- polyoxyethylene alkyl ether sulfate triethanolamine special polycarboxylic acid type polymer
- polyoxyethylene lauryl ether polyoxyethylene Oxyethylene cetyl ether
- Polyoxyethylene stearyl ether polyoxyethylene ethylene ether, polyoxyethylene higher alcohol ether, polyoxyethylene octyl ether, polyoxyethylene nonyl phenyl ether, polyoxyalkylene alkyl ether, polyoxyethylene derivatives , Polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan tristearate, polyoxyethylene sorbitan monooleate, polyoxyethylene sorbitan trioleate, tetraoleic acid Polyoxyethylene sorbit, polyethylene glycol monomono laurate, poly
- the amount of these dispersants to be added is based on the dispersibility of particles in the CMP abrasives and the prevention of settling, and the relationship between polishing scratches and the amount of dispersant added, relative to 100 parts by weight of the cerium oxide particles. A range of 0.01 to 2.0 parts by weight is preferable.
- the molecular weight of the dispersant is 100-50,000 force, more preferably 1,000-10,000 force. When the molecular weight of the dispersant is less than 100, a sufficient polishing rate may not be obtained when polishing the silicon oxide film or the silicon nitride film, and the molecular weight of the dispersant exceeds 50,000. In this case, the viscosity increases, and the storage stability of the slurry for CMP may decrease.
- Examples of methods for preparing dry composite particles of organic mother particles and inorganic particles include a composite fusion method using a mechano-fusion system manufactured by Hosoka Micron Corporation and a hybridization system manufactured by Nara Machinery Co., Ltd. These are technologies that produce composite particles by mechanically bonding a plurality of different material particles at the molecular level by applying mechanical energy (pressure / shear force). It is characterized by a simple process and a high degree of freedom in combination compared to the wet composite particle preparation method. This The composite particles obtained by these dry composite particle production apparatuses will be described in detail in the following examples.
- the polishing rate of the interlayer insulating film was measured using a polishing apparatus (IMRTECH10DVT) manufactured by Engis.
- a polishing pad (IC1000ZSuba400 made by Nitta Berth) is affixed to a polishing surface plate (diameter 200 mm), and the pad is also affixed to the bottom of the guide ring. Set the SiO film wafer to be polished on the bottom of the polishing weight and polish it in the guide ring.
- polishing pad Place on the polishing pad and perform polishing by rotating the guide ring and the polishing weight in the same direction as the rotation of the surface plate due to the frictional resistance of the contact surface according to the rotation of the surface plate.
- the polishing load was adjusted by the number of polishing weights, the load was 30 kPa, the rotation speed of the surface plate was 80 / min, and the polishing time was 2 min.
- the slurry was continuously dripped (20 mlZmin) with a tube pump and supplied.
- the polished SiO film wafer was dried by performing ultrasonic cleaning for 15 minutes with pure water.
- the film thickness was measured by measuring the difference in film thickness before and after polishing using an optical interference type film thickness measuring device and calculating the polishing speed.
- the composite particle abrasive grains having a surface coverage of inorganic particles with respect to the organic mother particles of 30% or more were used.
- flat agent is poly (meth) 0.3 weight acrylic acid-en Moniumu salt 0/0 was added to adjust the slurry pH with ammonia to 4, 5, 6, 7, 8 It was.
- Comparative Examples 1 and 2 the same slurry as in Example 1 was used, and the slurry pH was adjusted to 3.5 and 10.
- Comparative Example 3 a polishing test was conducted using the inorganic particles of the composite particle abrasive grains of Example 1 alone. The results of Examples 1 to 5 and Comparative Examples 1 to 3 are shown in Table 1.
- Comparative Examples 1 and 2 did not provide a sufficient polishing rate, and as shown in Comparative Example 3, it was found that the polishing rate was slow even with the nanoceria particles alone. Even if the composite particle abrasive grains of Examples 1 to 4 are less than 20% of the surface coverage of the inorganic particles with respect to the organic mother particles, it is not preferable because sufficient polishing ability cannot be obtained.
- the abrasive grains used in this example are described as being tested with composite particles alone. However, in the dry composite particle manufacturing method, 100% composite is not possible. In addition, inorganic particles may also be included.
- the polishing rate of the interlayer insulating film tends to increase as the amount of uncomposited inorganic particles increases. Therefore, the effect can be obtained even if the slurry is made by using abrasive grains obtained by adding inorganic particles to composite particles.
- the polishing rate dependency in the concentration of the composite grain abrasive was evaluated.
- the polishing test was performed under the same conditions as in Example 1.
- the slurries used in Examples 6 to 9 are composite particles of PMMA monodisperse particles (5.2) as organic mother particles and CeO particles (14 nm) as inorganic particles.
- Abrasive grains were used. Abrasive concentration was 0.2, 1, 5, 10 wt%, poly (meth) ⁇ click acrylic acid ammonium as a flattening agent - ⁇ beam salt 0.3 wt 0/0 was added, the slurry pH with ammonia Adjusted to 7.
- Comparative Examples 4 and 5 the same polishing test as in Example 1 was performed by using a slurry having an barrel concentration of 0.1 and 20% by weight and adjusting the slurry pH to 7. The results of Examples 6 to 9 and Comparative Examples 4 and 5 are shown in Table 2.
- the CMP slurries of the present invention shown in Examples 6 to 9 have excellent polishing ability that the interlayer insulating film polishing rate is very high compared with the slurry of Comparative Example 4.
- the polishing rate is slightly slow when the barrel concentration is 0.2% by weight or less.
- Example 10 The polishing test was performed under the same conditions as in Example 1.
- the slurries used in Examples 10 to 13 were monodisperse particles of PMMA 0.3, 1.5, 5.2, and 10 m as organic mother particles, and CeO particles (14 nm) as inorganic particles.
- Composite grain abrasive was used. The abrasive concentration is 1% by weight,
- Comparative Examples 6 and 7 the same polishing test as in Example 1 was performed by using a slurry with a barrel concentration of 0.1 and 20% by weight and a slurry pH of 7. The results of Examples 10 to 13 and Comparative Examples 6 and 7 are shown in Table 3.
- the CMP slurry of the present invention shown in Examples 10 to 13 has a very high interlayer insulating film polishing rate, and no scratches were observed on the polished wafer. Excellent performance. It was found that there was the fastest polishing value for composite particle abrasive grains with organic mother particle size of 1.5 m. In contrast, as shown in Comparative Example 6, when the particle size of the composite particle was 0.15 m, a sufficient polishing rate was not obtained. As shown in Comparative Example 7, when the particle size of the composite particle was 20 m, the polishing rate was sufficient, but many scratches were observed, and the dispersion state of the slurry was very bad.
- the particle size of the organic mother particles is less than 1 m, the composite particle becomes difficult, so about 1 to 6 / ⁇ ⁇ is most preferable.
- the particle size of the composite particle can be selected so that it matches the polishing pad pattern and surface roughness made of porous urethane resin, so that it matches the polishing pad used.
- polishing test was performed under the same conditions as in Example 1.
- an SiO film wafer as an interlayer insulating film and a Si N film wafer as a polishing stagger film are taken up,
- the polishing rate was compared.
- the slurry used in Examples 14 to 17 is composed of PMMA (5.2 m) monodispersed particles as organic mother particles and CeO particles (14 nm) as inorganic particles.
- Composite grain abrasive was used. Abrasive concentration as 1 wt%, flat agent is poly (meth) ammonium acrylate - ⁇ beam salt 0.05, 0.3, 1, 5 weight 0/0 were added, 7 slurry pH with ammonia It was adjusted.
- Comparative Examples 8 and 9 the same polishing test as in Example 14 was performed using a slurry having a leveling agent concentration of 0.01 and 10% by weight and a slurry pH of 7. The results of Examples 14 to 17 and Comparative Examples 8 and 9 are shown in Table 4.
- the CMP slurries of the present invention shown in Examples 14 to 17 were polished on a Si N film wafer, which was a staggered film with a very high polishing rate for an interlayer insulating film.
- CMP has a high polishing selectivity due to its low speed, and high flatness can be obtained by CMP.
- Comparative Example 8 when the concentration of the planarizing agent is 0.01% by weight, the polishing rate of the interlayer insulating film is very fast, but sufficient flatness is obtained because the polishing is performed up to the staggered film. There are disadvantages that cannot be obtained.
- Comparative Example 9 when the leveling agent concentration is 10% by weight, the polishing selectivity is large and excellent high flatness can be obtained, but the polishing rate of the interlayer insulating film becomes very slow, so that the processing efficiency is greatly increased. There is a problem that decreases.
- the chemical mechanical polishing slurry of the present invention has excellent polishing ability with respect to the interlayer insulating film, and can obtain the effect of sufficiently satisfying the low scratch property and polishing selectivity.
- the chemical mechanical polishing slurry of the present invention can be applied to an abrasive used for an object to be polished other than CMP of a semiconductor device, which is required to reduce scratches.
- the present invention can be applied to chemical mechanical polishing in the manufacture of electronic devices such as semiconductor wafers in semiconductor manufacturing.
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US8827771B2 (en) | 2008-06-18 | 2014-09-09 | Fujimi Incorporated | Polishing composition and polishing method using the same |
JP2015054967A (ja) * | 2013-09-12 | 2015-03-23 | ユービーマテリアルズ インコーポレイテッド | 研磨粒子、研磨スラリー及びこれを用いた半導体素子の製造方法 |
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JP2008000867A (ja) * | 2006-06-26 | 2008-01-10 | Sumitomo Metal Fine Technology Co Ltd | 研磨液、その製造方法、および研磨方法 |
US8827771B2 (en) | 2008-06-18 | 2014-09-09 | Fujimi Incorporated | Polishing composition and polishing method using the same |
JP2015004064A (ja) * | 2008-06-18 | 2015-01-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法、及び基板の製造方法 |
JP5894734B2 (ja) * | 2008-06-18 | 2016-03-30 | 株式会社フジミインコーポレーテッド | 研磨用組成物及びそれを用いた研磨方法 |
JP2015054967A (ja) * | 2013-09-12 | 2015-03-23 | ユービーマテリアルズ インコーポレイテッド | 研磨粒子、研磨スラリー及びこれを用いた半導体素子の製造方法 |
US9469800B2 (en) | 2013-09-12 | 2016-10-18 | Industrial Bank Of Korea | Abrasive particle, polishing slurry, and method of manufacturing semiconductor device using the same |
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