WO2004099472A1 - Iii-ⅴ族化合物結晶およびその製造方法 - Google Patents
Iii-ⅴ族化合物結晶およびその製造方法 Download PDFInfo
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- WO2004099472A1 WO2004099472A1 PCT/JP2004/004811 JP2004004811W WO2004099472A1 WO 2004099472 A1 WO2004099472 A1 WO 2004099472A1 JP 2004004811 W JP2004004811 W JP 2004004811W WO 2004099472 A1 WO2004099472 A1 WO 2004099472A1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12681—Ga-, In-, Tl- or Group VA metal-base component
Definitions
- the present invention relates to a III_V compound crystal and a method for producing the same, and more particularly, to a method for producing a good III-V compound crystal without cracking even when various substrates are used.
- a Group III-V compound crystal such as a GaN crystal is grown on a sapphire substrate, silicon (S i) substrate, or the like, which is a substrate different from the crystalline material, differences in crystal lattice constant, coefficient of thermal expansion, etc. As a result, stress is generated between the crystal and the substrate, and warpage and cracks are generated, so that a good III-V compound crystal cannot be obtained.
- a silicon oxide (Si 2 ) film is deposited on a sapphire substrate, the silicon oxide film is patterned by photolithography, etc., and a group III-V compound crystal is grown. Methods have been implemented to relieve the stress during the period. However, such a method requires patterning of a silicon oxide film, and has a problem that the manufacturing cost is high.
- a GaN layer is grown on a sapphire substrate or the like by MOCVD (Metal Organic Chemical Vapor Deposition), and a metal film is deposited thereon, followed by heat treatment.
- MOCVD Metal Organic Chemical Vapor Deposition
- a method has been proposed in which a GaN crystal is grown after a void is formed in the GaN layer (see, for example, JP-A-2002-343728).
- the growth of the GaN layer by the MOCDV method is essential, and there is a problem that the manufacturing cost is extremely high.
- An object of the present invention is to provide a high-quality III-IV compound crystal obtained by a simple and low-cost production method and a production method thereof to solve the above problems.
- a method for producing a Group III-V compound according to the present invention comprises the steps of: depositing a metal film on a substrate; heat treating in an atmosphere where a compound for patterning the metal film is present; Growing a group III-V compound crystal on the metal film after the heat treatment. Further, after the heat treatment step, a step of growing a group III-V compound buffer film on the metal film after the heat treatment; and a step of growing a group III-V compound crystal on the group III-V compound buffer film. And a step.
- FIG. 1 is a view for explaining one method for producing an IIIV group compound crystal according to the present invention.
- FIG. 2 is a view for explaining another method for producing an III-IV compound crystal according to the present invention.
- FIG. 3A is a schematic diagram showing one typical form of a hole or groove formed in a metal film
- FIG. 3B is another typical form of a hole or groove formed in a metal film. It is a schematic diagram. BEST MODE FOR CARRYING OUT THE INVENTION
- One method for producing a group III-V compound crystal according to the present invention comprises, as shown in FIG. 1, a step of depositing a metal film 2 on a substrate 1 as shown in FIG. And a step of growing a group III-V compound crystal 4 on the metal film 2 after the heat treatment, as shown in FIG. 1C. It is characterized by.
- One manufacturing method of the crystal is performed by the following steps.
- a metal film 2 is deposited on a substrate 1 by a method such as an evaporation method or a sputtering method.
- the metal film 2 is heat-treated in an atmosphere in which a patterning compound is present, whereby the metal film 2 is patterned into an irregular shape as shown in FIG.
- a hole or groove 12 having a worm-like shape as shown in FIG. 1 is formed, and the substrate 1 is exposed at the bottom of the hole or groove 12.
- FIG. 1A a metal film 2 is deposited on a substrate 1 by a method such as an evaporation method or a sputtering method.
- the metal film 2 is heat-treated in an atmosphere in which a patterning compound is present, whereby the metal film 2 is patterned into an irregular shape as shown in FIG.
- a hole or groove 12 having a worm-like shape as shown in FIG. 1 is formed, and the substrate 1 is exposed at the bottom of the hole or groove 12.
- HVPE Hydrodri de Vapor Phase Epitaxy
- the group III-V compound crystal 4 is grown using a method or the like.
- FIGS. 3A and 3B show typical forms of the worm-like holes or grooves formed in the metal film 2 by heat treatment in the presence atmosphere of the compound for patterning the metal film 2. This is schematically shown.
- the shape of FIG. 3A is large, and as the number of holes or grooves increases, the shape of FIG. 3B tends to be taken.
- the group III-V compound crystal 4 can collect information such as the lattice constant of the crystal of the substrate 1, so that a good group III-V compound crystal 4 can be obtained. grow up. Also, the formation of the worm-like holes or grooves 12 in the metal film alleviates the stress between the group III-V compound crystal 4 and the metal film 2, and the group III-V compound crystal 4 No cracks occur.
- the III-V group compound crystal can be manufactured by a VPE (Vapor Phase Epitaxy) method such as the above HVP E method instead of the high-cost MOCVD method, so that the manufacturing cost can be reduced.
- VPE Vapor Phase Epitaxy
- the metal film is formed into a metal film by performing a heat treatment in an atmosphere in which a compound for patterning the compound exists.
- the average width W of the hole or groove is 2 ⁇ ⁇ !
- the aperture ratio which is a percentage of the area of the hole or groove with respect to the entire area of the substrate, is 5% to 80%. If the average width W of the hole or groove is less than 2 nm, the hole or groove does not reach the substrate, and it becomes difficult to read the information on the substrate. If it exceeds 500 nm, the III-V compound crystal and the substrate It is difficult to relieve the stress of You.
- the average width W of the holes or grooves is more preferably 5 nm to 1,000 nm.
- the aperture ratio is less than 5%, the area of the III-V compound crystal in contact with the substrate is small, making it difficult to read information on the substrate. It becomes difficult to relax the stress between the III-V compound crystal and the substrate.
- the aperture ratio is more preferably 10% to 50%.
- the aperture ratio is defined by the following equation (1) as a percentage of the area of the hole or groove region with respect to the entire area of the substrate as described above.
- the substrate is a group III-V compound crystal to be grown unless it violates the purpose of the present invention. It can be widely used regardless of whether it is the same or different.
- the lattice constant of the crystal of the above-listed compound is close to the lattice constant of the group III-V compound crystal, and a good crystal is easily obtained.
- the III-V compound used as the substrate and the III-V compound crystal grown thereon need not be the same compound.
- the metal film is not particularly limited, but preferably contains titanium (T i) or vanadium (V) from the viewpoint of easy patterning. Preference is given to metals or alloys such as Ti, Ti—A1, V or V—A1.
- the thickness of the metal film is not particularly limited, but is preferably 10 nm to 1000 nm. If the thickness is less than 10 nm, it is difficult to leave the metal film at the time of pass-through, and if it exceeds 1000 nm, it becomes difficult to expose the substrate at the time of pass-through. From such a viewpoint, the thickness of the metal film is more preferably 30 nm to 500 nm.
- the compounds of patterning the metal film, the heat treatment of the metal film in the presence atmosphere of the compound refers to a compound of patterning vermicular holes or grooves in the amorphous to the metal film, ammonia ( ⁇ 3), nitrogen ( N 2 ) are preferred.
- the heat treatment conditions in the heat treatment in the presence atmosphere of the compound for patterning the metal film are preferably performed at 800 to 1200 ° C. for 0.5 to 20 minutes.
- Heat treatment The working temperature is 800. If the temperature is less than C or the heat treatment time is less than 0.5 minutes, the metal film is insufficiently passivated, and if the heat treatment temperature exceeds 1200 ° C or the heat treatment time exceeds 20 minutes. Excessive patterning of the metal film. From the above viewpoint, the heat treatment temperature is more preferably 900 to 110 ° C., and the heat treatment time is more preferably 0.5 to 10 minutes.
- III-V compound crystal in above G a x A l y I ri .yN (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1) when it is, for these crystals, other Currently Because there is no particularly useful production method, this is an extremely useful production method. (Embodiment 2)
- another method for producing a group III-V compound crystal according to the present invention comprises the steps of: depositing a metal film 2 on a substrate 1 as shown in FIG. 2A; and FIG. A step of performing a heat treatment in an atmosphere in which a compound for patterning the metal film 2 is present, and a step of growing a group III-V compound buffer film 3 on the metal film 2 after the heat treatment as shown in FIG. 2D, a step of growing a group III-V compound crystal 4 on the group III-V compound buffer film 3. That is, with reference to FIG. 2 and FIG. 3, another method for producing a III-V compound crystal according to the present invention is performed by the following steps. First, as shown in FIG.
- a metal film 2 is deposited on a substrate 1 by a method such as an evaporation method or a sputtering method.
- the metal film 2 is subjected to a heat treatment in an atmosphere in which a compound for passivating is present, whereby the metal film 2 is patterned in an irregular shape as shown in FIG. 2B, and as shown in FIG. 3A or FIG. 3B.
- a worm-like hole or groove 12 as shown is formed, and the substrate 1 is exposed at the bottom of the hole or groove 12.
- a group III-V compound buffer film 3 is formed on the metal film 2 on which the worm-like holes or grooves 12 have been formed after the heat treatment by, for example, the HVPE method. Let it grow.
- the group III-V compound buffer film 3 refers to an amorphous film of a group III-V compound grown at a lower temperature than when growing a crystal.
- the III-V compound forming the buffer film and the III-V compound forming the crystal do not necessarily have to have the same chemical composition. It is preferable to have a chemical composition from the viewpoint of improving the quality of the crystal to be grown.
- a III-V compound crystal 4 is grown on the III-V compound buffer film 3 by using, for example, HVPE.
- the III-V compound crystal 4 formed later on the III-V compound buffer film 3 by being formed on the metal film 2 in which the worm-like holes or grooves are formed.
- the stress between the substrates 1 can be further reduced.
- the III-V compound crystal 4 not the substrate 1, but the information of the amorphous film of the III-V compound is picked up. Compound crystals are obtained.
- Embodiments 1 and 2 will be described based on specific examples.
- a sapphire substrate is used as a substrate 1, and a metal Ti film is deposited as a metal film 2 on a substrate 1 by a vapor deposition method at 3 O nm. did.
- the metal film 2 was heat-treated at 100 ° C. for 0.5 minute in an NH 3 atmosphere. After cooling, when the surface of the metal film 2 is observed with a scanning electron microscope (SEM), worm-like holes or grooves are seen as shown in Fig. 3A, and the average width of the holes or grooves W was 8 nm and the aperture ratio was 12%. Further, as shown in FIG.
- a group III-V compound crystal 4 was grown at 1,000 ° C for 5 hours by HVPE using Ga and NH 3 as raw materials. was gotten.
- the obtained crystal was a GaN crystal by XRD measurement, and it was found that the crystal had a good full width half maximum (FWHM) of 120 arcsec in XRD.
- FWHM full width half maximum
- the metal film 2 was heat-treated at 1000 ° C. for 3 minutes in an NH 3 atmosphere. After cooling, when the surface of the metal film 2 is observed with a scanning electron microscope (SEM), worm-like holes or grooves are seen as shown in Fig. 3A, and the average width of the holes or grooves W was 31 nm and the aperture ratio was 22%.
- SEM scanning electron microscope
- a group III-V compound buffer film 3 was grown at 500 ° C. for 0.5 hours by the HVPE method using Ga and NH 3 as raw materials.
- a step of depositing a metal film on a substrate a step of performing a heat treatment in an atmosphere in which a compound for patterning the metal film is present, and a step of forming a III-V film on the metal film after the heat treatment
- a step of growing a group compound crystal a high-quality group III-V compound crystal can be obtained by a simple and low-cost production method without generating cracks.
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Abstract
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Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/521,060 US7297625B2 (en) | 2003-05-08 | 2004-04-01 | Group III-V crystal and manufacturing method thereof |
EP04725190A EP1522612A4 (en) | 2003-05-08 | 2004-04-01 | COMPOUND III-V SEMICONDUCTOR CRYSTAL AND PROCESS FOR PRODUCING THE SAME |
US11/871,162 US7485484B2 (en) | 2003-05-08 | 2007-10-12 | Group III-V crystal |
US12/617,733 US8134223B2 (en) | 2003-05-08 | 2009-11-13 | III-V compound crystal and semiconductor electronic circuit element |
US13/368,329 US8304334B2 (en) | 2003-05-08 | 2012-02-07 | III-V compound crystal and semiconductor electronic circuit element |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2003-129829 | 2003-05-08 | ||
JP2003129829A JP4457576B2 (ja) | 2003-05-08 | 2003-05-08 | Iii−v族化合物結晶およびその製造方法 |
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US10/521,060 A-371-Of-International US7297625B2 (en) | 2003-05-08 | 2004-04-01 | Group III-V crystal and manufacturing method thereof |
US11/871,162 Division US7485484B2 (en) | 2003-05-08 | 2007-10-12 | Group III-V crystal |
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WO2004099472A1 true WO2004099472A1 (ja) | 2004-11-18 |
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US (3) | US7297625B2 (ja) |
EP (1) | EP1522612A4 (ja) |
JP (1) | JP4457576B2 (ja) |
CN (2) | CN101071794B (ja) |
TW (1) | TW200503076A (ja) |
WO (1) | WO2004099472A1 (ja) |
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US8415187B2 (en) | 2009-01-28 | 2013-04-09 | Solexant Corporation | Large-grain crystalline thin-film structures and devices and methods for forming the same |
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JP4457576B2 (ja) * | 2003-05-08 | 2010-04-28 | 住友電気工業株式会社 | Iii−v族化合物結晶およびその製造方法 |
JP4396816B2 (ja) | 2003-10-17 | 2010-01-13 | 日立電線株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP2007027417A (ja) * | 2005-07-15 | 2007-02-01 | Sanken Electric Co Ltd | 窒化物半導体装置及びその製造方法 |
JP5057774B2 (ja) * | 2006-12-26 | 2012-10-24 | 京セラ株式会社 | 発光素子及び照明装置 |
JP5464518B2 (ja) * | 2007-09-03 | 2014-04-09 | 学校法人上智学院 | Iii族窒化物構造体およびiii族窒化物半導体微細柱状結晶の製造方法 |
JP2010042981A (ja) | 2008-07-17 | 2010-02-25 | Sumitomo Electric Ind Ltd | AlGaNバルク結晶の製造方法およびAlGaN基板の製造方法 |
US8803189B2 (en) * | 2008-08-11 | 2014-08-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | III-V compound semiconductor epitaxy using lateral overgrowth |
US8507304B2 (en) | 2009-07-17 | 2013-08-13 | Applied Materials, Inc. | Method of forming a group III-nitride crystalline film on a patterned substrate by hydride vapor phase epitaxy (HVPE) |
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JP2004331453A (ja) | 2004-11-25 |
TW200503076A (en) | 2005-01-16 |
CN1318661C (zh) | 2007-05-30 |
CN1697895A (zh) | 2005-11-16 |
JP4457576B2 (ja) | 2010-04-28 |
CN101071794B (zh) | 2010-09-01 |
EP1522612A1 (en) | 2005-04-13 |
US20080038580A1 (en) | 2008-02-14 |
US7485484B2 (en) | 2009-02-03 |
CN101071794A (zh) | 2007-11-14 |
US7297625B2 (en) | 2007-11-20 |
US20080299748A1 (en) | 2008-12-04 |
TWI295481B (ja) | 2008-04-01 |
US20050227472A1 (en) | 2005-10-13 |
EP1522612A4 (en) | 2008-09-03 |
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