WO2002055975A1 - Detecteur de phase, procede d'etablissement de valeur de reference de detecteur de phase, thermometre a infrarouge, et procede de mesure de temperature sur ce thermometre - Google Patents

Detecteur de phase, procede d'etablissement de valeur de reference de detecteur de phase, thermometre a infrarouge, et procede de mesure de temperature sur ce thermometre Download PDF

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Publication number
WO2002055975A1
WO2002055975A1 PCT/JP2000/009340 JP0009340W WO02055975A1 WO 2002055975 A1 WO2002055975 A1 WO 2002055975A1 JP 0009340 W JP0009340 W JP 0009340W WO 02055975 A1 WO02055975 A1 WO 02055975A1
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Prior art keywords
temperature
cold junction
infrared thermometer
voltage value
input
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PCT/JP2000/009340
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English (en)
Japanese (ja)
Inventor
Kazuhito Sakano
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Kazuhito Sakano
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Application filed by Kazuhito Sakano filed Critical Kazuhito Sakano
Priority to PCT/JP2000/009340 priority Critical patent/WO2002055975A1/fr
Publication of WO2002055975A1 publication Critical patent/WO2002055975A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables

Definitions

  • Phase detector reference value setting method of phase detector, infrared thermometer and temperature measurement method of infrared thermometer
  • the present invention relates to a phase detector, a method of setting a reference value of a phase detector, an infrared thermometer, and a method of measuring a temperature of an infrared thermometer, and more specifically, a voltage obtained by converting a physical value.
  • the present invention relates to a phase detector that inputs a value and a method of setting a reference value in the phase detector.
  • the present invention also relates to an infrared thermometer to which such a phase detector is applied and a temperature measuring method using the infrared thermometer.
  • a measurement method using a voltage value output according to the magnitude of a target physical value that is, a target corresponding to a measured output voltage value using a correlation between the target physical value and an output voltage value
  • a physical value For example, there is a method of measuring the temperature of the measurement target by detecting infrared rays emitted from the measurement target by an infrared thermometer and measuring an output voltage value generated according to the intensity of the infrared rays. .
  • thermopile sensor In an infrared thermometer, a pyroelectric sensor or a thermopile sensor is generally used as a non-contact type temperature sensor for detecting infrared rays radiated from an object to be measured.
  • Pyroelectric sensor c pyroelectric sensor is a sensor for detecting the output 'change in the surface charge of the pyroelectric body according absorbed and Kino temperature change infrared energy emitted from the measurement target temperature of the pyroelectric In order to produce output only when changes occur, incident infrared rays are shoved and intermittently intercepted to obtain continuous output.
  • a thermopile sensor is a sensor in which thermocouples are deposited by integrated circuit technology, and a continuous output is output for the temperature difference between the hot junction and the cold junction by using a large number of thermocouples connected in series.
  • thermopile sensor As a basic usage of the thermopile sensor, the output is generated due to the temperature difference between the hot junction temperature of the thermopile based on the infrared output radiated from the measurement target and the cold junction maintained at a constant temperature.
  • a method of measuring the temperature of the measurement target by measuring the thermopile output voltage may be used. That is, assuming that the temperature of the hot junction is ⁇ and the temperature of the cold junction is T Q , the electromotive force V generated in the thermopile is given by Stefan-Volman's law.
  • V k (T 4 — T. 4 ) (k is a constant)... (1)
  • the temperature of the thermal junction that is, the relative temperature T of the measurement target can be known.
  • thermopile sensor there is a temperature measurement method for detecting the temperature coincidence point between the cold junction and the hot junction by forcibly controlling the temperature of the cold junction. It is clear from equation (1) that the temperature coincidence point between the cold junction and the hot junction is the point where the electromotive force generated in the thermopile becomes zero. Therefore, by monitoring the voltage output from the thermopile and detecting the temperature of the cold junction at a point where the value becomes zero, the temperature of the hot junction, that is, the temperature of the measurement target is measured. You can know. In such a method of performing temperature measurement by the so-called “zero method”, the ambient temperature has less influence on the cold junction temperature than when the temperature control of the cold junction is not performed as described above.
  • thermometer disclosed in US Pat. No. 4,900,162 will be described as an example of using a thermopile sensor for an active use.
  • FIG. 16 is a sectional view of a main part of a conventional infrared thermometer disclosed in US Pat. No. 4,900,162.
  • the infrared thermometer 44 for measuring the temperature of the measurement target 43 is constituted as follows. Take heat sink 18 first A window member 45 is provided on the sensor stem 37 so that the infrared rays emitted by the measurement target 43 can efficiently reach the upper surface of the attached thermopile 25.
  • the thermopile 25 is provided with electrical contacts 46a and 46b, which are connected to the controller 48 by conductors 47a and 47b, respectively.
  • the summer evening 52 is located in the vicinity of the summer 25.
  • the semiconductor 52 is connected to the temperature processor 49 by conductors 47c and 47d.
  • FIG. 17 is a block diagram showing the principle of temperature measurement using the infrared thermometer shown in FIG.
  • FIG. 18 is a diagram showing the behavior of each output at the time of measurement.
  • the temperature measurement method will be described with reference to FIGS. 17 and 18.
  • the controller 48 drives the heating device 50 to preheat the thermo-modal 25 to near the predicted temperature of the measurement target 43.
  • thermopile 25 senses the infrared radiation radiated from the measurement target 43, and the temperature of the hot junction rises to generate a temperature difference with the cold junction.
  • the electromotive force generated in the thermopile 25 is output to the controller 48 as an output voltage value (FIG. 18A).
  • the controller 48 drives the heating device 50 according to the output voltage value, and controls the cold junction temperature of the thermopile 25.
  • thermopile output voltage value shows a positive voltage value as shown in FIG.
  • the temperature of the cold junction approaches the temperature of the hot junction (Fig. 18B), and the thermopile output is accordingly adjusted.
  • the temperature of the voltage gradually decreases (first 8 Figure C) c and the cold junctions are consistent with the temperature of the warm junction, mono- thermopile output voltage values is zero (first 8 Figure D).
  • the cold junction temperature (FIG. 18E) read by the error 52 is the temperature of the measurement target 43.
  • thermopile sensor when used in an active-type usage method, the temperature of the cold junction is forcibly controlled, thereby suppressing the effect of fluctuations in the ambient environment temperature and making accurate measurements. .
  • thermopile sensor preheating the thermopile sensor and minimizing the temperature difference between the hot junction and the cold junction, the larger the temperature difference between the hot and cold junctions, It is possible to suppress a relative output error caused by a so-called “temperature coefficient of sensitivity” in which the correlation is not linear.
  • the controller 48 controls the cooling device 51 such as a Peltier element to cool the cold junction to match the temperature of the hot junction. By doing so, the temperature was measured.
  • thermopile sensor if temperature control involving cooling is performed in this manner, various problems occur with the temperature control.
  • thermopile sensor itself has a built-in Peltier element to perform cooling, heat is generated on the surface opposite to the cooling operation surface, equivalent to the cooling operation, and heat inside the thermopile sensor is generated. It is released outside the thermopile sensor through the sink.
  • the heat sink is thermally connected to the cold junction. Therefore, part of the heat energy is fed back to the cold junction after a heat transfer time based on the heat capacity of the heat sink itself, and the temperature of the cold junction rises. Therefore, the cooling control by the Peltier element must be performed again for such a feed pack effect at the temperature.
  • the “feedback delay time of the system” greatly affects the accuracy of the control target.
  • the “feedback delay time of the system” fluctuates due to the ambient temperature, and the temperature of the cold junction increases. It is extremely difficult to control the accuracy. Therefore, it is also difficult to accurately detect the zero point of the thermopile output voltage value.
  • thermopile sensor when heating or cooling is instantaneously changed for the thermopile sensor, The temperature balance in the thermopile sensor suddenly breaks down, and the thermal reaction (heat shock) phenomenon easily occurs.
  • thermal reaction heat shock
  • the system In order to prevent this thermal reaction phenomenon, when external heat energy is applied by heating or cooling, the system must be soft-started from the state of zero external heat energy load and the rate of change must be kept as constant as possible. is important.
  • the temperature control since the temperature control is performed while varying the amount of cooling energy, it is difficult to maintain the rate of change constant. Therefore, an uncontrollable state due to the thermal reaction phenomenon or fluctuations in the thermopile output voltage value are easily induced, and it is very difficult to perform accurate temperature measurement.
  • thermopile sensor when a Peltier element is mounted outside the thermopile sensor to cool the thermopile sensor, the cooling energy is transmitted to all the components that make up the thermopile sensor. growing. Therefore, electric power for supplying such cooling energy is required. Also, it is difficult to measure the temperature in a short time. Furthermore, it is difficult to accurately perform temperature control, as in the case of incorporating a Peltier element, because heat generated corresponding to a large amount of cooling energy is generated and the temperature of the apparatus itself is easily increased. As described above, in a thermopile sensor, it is not preferable to perform temperature control involving cooling.
  • the inventor of the present invention first sets a voltage threshold value on the negative region side of the thermopile output voltage value, and outputs the thermopile output when the cold junction of the thermopile is heated.
  • a method for detecting the temperature of the cold junction at the moment when the voltage value passes the voltage threshold has been filed in PCT / JP00 / 08993.
  • Such a voltage threshold is appropriately determined based on the predicted maximum temperature of the surrounding environment and the predicted minimum temperature of the measurement target. More specifically, it can be set by the reference voltage of the phase detector which receives the thermopile output voltage value.
  • the reference voltage of the phase detector which receives the thermopile output voltage value.
  • the reference voltage value of the phase detector it is not preferable to set the reference voltage value of the phase detector to a constant value because there is an output characteristic error between the individual thermopile sensors and an error associated with the aforementioned “temperature coefficient of sensitivity”. Rather, in order to eliminate these errors, it is preferable to appropriately change the reference voltage value of the phase detector for each device.
  • comparators that can control the reference voltage from outside.
  • a different voltage value data is written in advance for each address in the memory, the address is read out as appropriate, and the D / A is read out.
  • the analog signal is converted by a converter, and this is used as the reference voltage for the comparator.
  • the reference voltage value cannot be set outside the range of the voltage value data described in the memory.
  • the data stored in the memory is a digital data
  • the setting accuracy of the reference voltage value may not be sufficient. For example, as described above, when the reference voltage value is to be determined as appropriate for each device, the digital data closest to the optimum reference voltage value must be selected, and the data stored in the memory must be selected. If the number is not enough, the accuracy will be significantly reduced. Conversely, in order to improve the accuracy at the time of setting, the number of stored data must be as large as possible.
  • the technique described here determines which of the voltage values stored in the memory is closest to the optimal reference voltage value for each device. No guidance available.
  • the present invention solves the above-mentioned problems in the prior art, and in particular, enables high-accuracy temperature measurement even when the ambient environment temperature is higher than the temperature at the time of measurement. It is an object of the present invention to provide a simple infrared thermometer and a temperature measuring method using the same. In measurement devices typified by such infrared thermometers, that is, devices that convert physical values into voltage values and perform measurements, the reference voltage value corresponding to the reference value of the target physical value can be set arbitrarily and precisely. An object of the present invention is to provide a phase detector and a method of setting a reference voltage value in such a phase detector.
  • the phase detector according to the first claim of the present application which is provided to solve the above problem, is a phase detector that receives a voltage value obtained by converting a physical value as an input.
  • the phase detector according to the second claim of the present application is the phase detector according to the first claim of the present application, wherein the input detector includes a comparing unit, a plurality of resistors, and an input scanning unit.
  • the plurality of resistors are freely combined, and a plurality of voltage values are sequentially input and scanned to the comparing means by using a plurality of combined resistors having different resistance values obtained thereby.
  • the phase detector according to the third aspect of the present invention is the phase detector according to the first aspect of the present invention, wherein the phase detector includes a comparison unit, a plurality of resistors, an input scanning unit, and a storage unit.
  • the input scanning means freely combines the plurality of resistors, and sequentially scans the comparing means with multi-level voltage values using a plurality of combined resistors having different resistance values obtained by the combination.
  • the comparing means includes: a first input voltage value input corresponding to a reference value of the target physical value; 40
  • the storage device stores a resistance value designation address of the combinational resistor at the coincidence point. It is a vessel.
  • a phase detector according to a fourth aspect of the present invention is the phase detector according to the second or third aspect of the present invention, wherein the plurality of resistors form a resistor array. Is a phase detector.
  • a plurality of resistors more specifically, a resistor array composed of these resistors is used, and the multi-stage voltage values are sequentially input and scanned to the comparison means inside the phase detector.
  • a desired reference voltage value can be set. For example, assuming now a resistor array consisting of N resistors, a combination of these resistors will result in 2 N different combinations of resistors having different resistance values.
  • the voltage value obtained corresponding to the value to be set as the reference value is amplified, and this is input to the comparison means as the first input voltage value, and the second input voltage value As a result, 2 N kinds of voltage values obtained by the combination resistors are sequentially input.
  • the comparing means compares the first input voltage value with the second input voltage value and detects a coincidence point. Since the voltage value at the coincidence point is a voltage value corresponding to the target physical reference value, the desired reference voltage value can be obtained by storing the address number designating the combination resistance at this time in a storage means such as a memory. Can be set.
  • the control of the drive IC is driven by the information processing device.
  • a memory such as a RAM or an EPROM built in the information processing apparatus is used.
  • a memory such as RAM or EPROM may be built in the phase detector itself. This case is preferable in that the reference voltage value can be set by the phase detector alone.
  • the infrared thermometer controls the temperature of the cold junction region of the thermopile sensor and detects a phase inversion of the thermopile output voltage value at that time with respect to the reference voltage value. Infrared thermometer that measures the temperature of the target 340
  • thermometer according to claim 1, wherein the reference voltage value is preset in a negative voltage value region.
  • the cold junction region is forcibly and unilaterally heated by the heating element system, the temperature is changed gradually and at a constant gradient, and the reference voltage value is passed at the constant gradient. This eliminates the delay in the thermal response speed due to changes in the ambient temperature. In addition, there is an effect that no problem occurs regarding the “temperature coefficient of sensitivity”. In addition, the temperature of the cold junction region is controlled not to be fed-pack controlled so that the thermopile output voltage matches the reference voltage value, but to be forced to pass through at a constant gradient. As a result, the measurement time can be significantly reduced.
  • the ambient temperature is higher than the measurement target temperature, for example, when the eardrum temperature is 36 ° C in the temperature measurement using an ear thermometer, the Can be measured even when the temperature is 40 ° C.
  • some cooling means such as a Peltier element, as described above.
  • thermopile sensor when a Peltier element is incorporated as a cooling means inside the thermopile sensor, heat generated equivalent to the cooling energy is generated on the opposite side of the Peltier element cooling section. —It is necessary to radiate heat outside the mopile sensor.
  • the thermopile sensor since the thermopile sensor has a structure in which the heat sink is connected to the cold junction region as a thermal circuit, part of the heat generation action is transferred to the cold junction region after the heat transfer time based on the heat capacity of the heat sink. Temperature feed packed. Since the temperature of the cold junction region rises due to this temperature reducing action, it is necessary to further adjust the cooling energy by the Peltier element.
  • the so-called “closed-lipped feed pack” adjusts the cooling energy of the Peltier element while detecting the absolute value change of the thermopile output.
  • Control j is indispensable.
  • thermopile is a sensor that generates a relative output generated by a temperature difference balance based on a temperature difference between a cold junction and a hot junction as an electromotive force. According to When heating or cooling is applied to the thermopile output when the temperature difference is balanced and the temperature balance is intentionally broken, an external temperature change is performed to prevent heat reaction (heat shock). The energy must have a constant rate of change starting from zero. That is, in the above-mentioned “closed feed pack control”, it is necessary to control the cooling amount so as to have a constant rate of change.
  • the time delay of the feedback system is an important factor in determining the temperature setting accuracy.However, since the thermopile has a heat transfer delay based on the large heat capacity of the heat sink, it results in feedback. A large time delay occurs, and it is very difficult to control the cooling rate at a constant rate.
  • thermopile when a cooling device is installed outside the thermopile, it is necessary to apply a large amount of heat energy so that heat is transferred to all the components of the thermopile, and it is difficult to measure the temperature in a short time. .
  • a small device such as an ear thermometer, there is a problem that the energy cannot be covered only by the built-in battery.
  • thermopile temperature measuring element for example, a thermopile
  • a thermopile originally has a large response speed delay with respect to the thermopile output, and in such a chattering state, it is impossible to detect the zero point of the thermopile output. Impossible. Or, in this state, if you try to detect the zero point of the thermopile output, a large error will occur with respect to the actual measured target temperature due to the delay of the response speed in the summer.
  • the reference voltage threshold is set in the negative region, and the phase inversion of the thermopile output with respect to this reference voltage (voltage threshold) is detected. Then, the target temperature can be measured by controlling the heating of the cold junction area, and no cooling means is required.
  • Specific means for setting such a reference voltage value include, for example, claims 1 and 2 T JP00 / 09340
  • An infrared thermometer is the infrared thermometer according to the fifth aspect of the present invention, further comprising: comparing means, a plurality of resistors, input scanning means, and storage means,
  • the input scanning unit is configured to freely combine the plurality of resistors, and by using a plurality of combined resistors having different resistance values obtained thereby, sequentially input scans of multi-stage voltage values to the comparing unit,
  • the comparing means compares a first input voltage value input corresponding to a reference temperature value with a second input voltage value input by the input scanning means, and detects a coincidence point thereof.
  • the storage means determines the reference voltage value by storing a resistance designation address of a combinational resistor at a coincidence point detected by the comparison means. It is a line thermometer.
  • the infrared thermometer according to the seventh aspect of the present invention is the infrared thermometer according to the sixth aspect, further comprising a phase detector for detecting phase inversion of the thermopile output voltage value with respect to the reference voltage value. And an infrared thermometer, wherein the phase detector includes at least the comparing means, a plurality of resistors, and an input scanning means.
  • An infrared thermometer according to an eighth aspect of the present invention is the infrared thermometer according to the seventh aspect, wherein the phase detector has a built-in storage device. .
  • An infrared thermometer is the infrared thermometer according to any one of the sixth to eighth aspects, wherein the plurality of resistors form a resistor array. Is an infrared thermometer.
  • the maximum permissible ambient temperature for measurement is estimated to be 40 ° C, and the minimum temperature for the measurement (eardrum) at night is expected to be 35 ° C, and the difference (minus 5.0 deg)
  • the corresponding voltage value is set on the negative side of the thermopile output voltage value.
  • the temperature of the blackbody furnace is set to 5.0 deg lower than the ambient temperature.
  • the thermopile output voltage output to the black body furnace is amplified at a specified magnification and input to a comparison means inside the phase detector as a first input voltage value.
  • 2N multi-step voltage values obtained by a combination resistor obtained by combining these resistors are used as the second input voltage to the comparison means inside the phase detector. Input scanning is performed sequentially as a value.
  • the comparison means inside the phase detector detects this.
  • the reference voltage value is set by storing the resistance value designation address of the combined resistor at that time in a storage unit such as a memory installed outside the phase detector or built in the phase detector.
  • resistor array is composed of one of two resistors, to obtain a 2 1 2 That voltage value of 4 0 9 6 stages by combination resistance. Therefore, when this resistor array is used, the reference voltage value corresponding to the desired reference temperature value (minus 5.0 deg) can be obtained at a temperature accuracy of 5.0 Z 4096, that is, 0.0012 deg. Can be set.
  • the output characteristic error based on the individual characteristics of the thermopile, the error due to the "temperature coefficient of sensitivity" of the thermopile, and the infrared temperature including the amplifier The output characteristic errors caused by each of the other components that make up the meter are integrated and calibrated collectively. That is, in the reference voltage value set in this way, there is no “output error” or “temperature coefficient of sensitivity” as in the conventional zero point. Therefore, the cold junction area of the thermopile is controlled to be heated so that the thermopile output voltage passes the reference voltage value at a constant gradient, and the phase inversion of the thermopile output voltage value with respect to the reference voltage value at this time is performed. By detecting the temperature and detecting the temperature of the cold junction region in synchronization with the phase inversion, the temperature of the measurement target can be measured with high accuracy.
  • the infrared thermometer according to the tenth aspect of the present invention is the infrared thermometer according to the ninth aspect, wherein the heating element system for heating the cold junction region and the temperature of the cold junction region are measured. And a cold junction temperature measuring element system for performing An infrared thermometer characterized in that at least one of the sub-system and the cold junction temperature measuring element system is synchronized in thermo-modal output and thermal response speed.
  • the infrared thermometer according to claim 11 of the present application is the infrared thermometer according to claim 10 of the present application, wherein the heating element system, the cold junction temperature measuring element system, and the cold junction section.
  • the infrared thermometer is characterized in that the three elements of the region have a structure directly connected to each other.
  • thermopile sensor With such a configuration, by performing temperature matching among the three elements, it becomes possible to synchronize the thermal response speed of the cold junction temperature measuring element system as much as possible with the output of the thermopile sensor.
  • the temperature of the cold junction area and the cold junction temperature measuring element should be forcibly raised to a certain bias temperature in advance by the heating element system. desirable.
  • the resistance change of the cold junction temperature measuring element at the time of temperature measurement is only the temperature rise from the bias temperature to the reference temperature value. Therefore, its thermal response speed becomes extremely fast, and it can be synchronized as much as possible with the temperature rise of the cold junction.
  • the temperature of the cold junction area of the thermopile has already risen to the ambient temperature. There is no.
  • the infrared thermometer according to claim 12 of the present application is the infrared thermometer according to claim 11, wherein the cold junction region is unilaterally and forcibly heated by the heating element system.
  • a detector that detects whether the voltage value of the thermopile output at this time is inverted with respect to the reference voltage value, and a converter that converts the presence or absence of the phase inversion into a 2-bit digital signal.
  • the infrared thermometer detects the temperature of the cold junction temperature measuring element in synchronization with the digital signal.
  • the infrared thermometer according to claim 13 of the present application is the same as the infrared thermometer according to claim 12 of the present application.
  • the infrared thermometer according to claim 14 of the present application is the infrared thermometer according to claim 13 of the present application, wherein at least one of the heating element system and the cold junction temperature measuring element includes:
  • This infrared thermometer is characterized by a resistor with self-controlling positive temperature coefficient characteristics.
  • Resistors with a self-controlling positive temperature coefficient characteristic have the property that the electrical resistance of the heating element increases as the temperature of the heating element rises due to energization. It has the feature of being maintained at a constant temperature.
  • thermopile sensor Therefore, by using this, the temperature of the cold junction area of the thermopile sensor can be controlled safely and easily.
  • An infrared thermometer according to a fifteenth aspect of the present invention is the infrared thermometer according to the fifteenth aspect of the present invention, wherein the heating element system generates heat and maintains a constant temperature.
  • An infrared thermometer comprising a variable temperature system that varies the temperature within a certain temperature range.
  • the cold junction region and the cold junction temperature measuring element can be heated in advance to a constant Piase temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, since the resistance change of the cold junction temperature measuring element is only the temperature rise in the hot junction area due to infrared energy from the measurement gate, its thermal response speed is extremely fast, and the cold junction area Can be synchronized as much as possible with respect to a temperature change.
  • the infrared thermometer according to the sixteenth aspect of the present invention is the infrared thermometer according to the fifteenth aspect of the present invention, wherein the heating element system has two kinds of self-controls having different self-saturation stable temperatures.
  • This is an infrared thermometer characterized by arranging a resistor having a positive temperature coefficient characteristic.
  • a resistor including a self-control type positive temperature coefficient characteristic in which the self-saturation stable temperature is around the eardrum temperature (for example, 34 ° C) In this way, the cold junction region and the cold junction temperature measuring element are preliminarily heated to a constant bias temperature (34 ° C), while the self-saturation stable temperature is higher than the eardrum temperature (for example, 50 ° C).
  • the temperature of the eardrum can be measured by variably heating the resistor including the controlled positive temperature coefficient characteristic within a certain temperature range (for example, 34 to 42 ° C).
  • the resistor including the self-controlling positive temperature coefficient characteristic whose self-saturation stable temperature is near the eardrum temperature is maintained at a constant self-saturation stable temperature (34 "C) regardless of the ambient temperature change. Since the sensor itself is maintained, the overheat accident of the thermopile sensor is prevented, and the resistor including the self-regulating positive temperature coefficient characteristic whose self-stable saturation temperature is higher than the eardrum temperature is variable-heated. Even if the temperature control of variable heating becomes impossible due to malfunction or failure, heating is not performed above the self-saturation stable temperature (50 ° C), thereby preventing an infrared thermometer from overheating.
  • An infrared thermometer is the infrared thermometer according to the fourteenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between elements.
  • the infrared thermometer according to the eighteenth aspect of the present invention is the infrared thermometer according to the fourteenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between elements.
  • An infrared thermometer having a structure in which two or more pairs of resistors each having a self-control type positive temperature coefficient characteristic of a different resistance are incorporated in the cold junction region.
  • the infrared thermometer according to the nineteenth aspect of the present invention is the infrared thermometer according to the fourteenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between elements.
  • a plurality of pairs of two pairs of resistors each including a self-controlling positive temperature coefficient characteristic of a different resistance are combined into the cold junction region, and a plurality of pairs are incorporated into the cold junction region. Infrared thermometer.
  • the infrared thermometer according to the twenty-fifth aspect of the present invention is the infrared thermometer according to the fifteenth aspect of the invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and is electrically insulated between the elements.
  • System consisting of multiple resistors with self-controlling positive temperature coefficient characteristics of the same resistance 40
  • the infrared thermometer has a structure in which a plurality of systems are incorporated into the cold junction region.
  • the infrared thermometer according to the twenty-first aspect of the present invention is the infrared thermometer according to the fifteenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between elements.
  • An infrared thermometer having a structure in which two or more pairs of two resistors each having a self-controlling positive temperature coefficient characteristic of a different resistance are incorporated in the cold junction region.
  • An infrared thermometer is the infrared thermometer according to the fifteenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements.
  • a plurality of pairs of two resistors each including a self-controlling positive temperature coefficient characteristic of a different resistance, and a plurality of pairs combined with each other in the cold junction region. It is an infrared thermometer.
  • thermometer in the infrared thermometer according to the seventeenth to twenty-second claims of the present application, by arranging a plurality of resistors or a plurality of pairs including a self-control type positive temperature coefficient characteristic, the self-control type positive temperature coefficient characteristic can be obtained. Is heated for each system to enable fine temperature control.
  • the resistors including the self-controlling positive temperature coefficient characteristic of the heating system and the cold junction temperature measuring element system are all safe without being overheated above a certain temperature.
  • the infrared thermometer according to claim 23 of the present application is the infrared thermometer according to claim 13 of the present application, wherein the resistor including the self-controlling positive temperature coefficient characteristic is deposited on a substrate surface by vapor deposition. An infrared thermometer characterized by being composed.
  • thermopile sensor In the process of manufacturing an infrared thermometer, a thermopile sensor is generally formed on the surface of a silicon pellet, a silicon chip, or a silicon wafer by using a semiconductor lamination technique. Therefore, when forming a resistor having a self-controlling positive temperature coefficient characteristic, it is possible to increase the degree of integration by forming the resistor using a vapor deposition technique, which is one method of the semiconductor lamination technique. It becomes possible to produce it efficiently. Further, it is easy to structurally and thermally connect the resistor including the self-control type positive temperature coefficient characteristic to the cold junction region of the thermopile.
  • thermometer according to claim 24 of the present application is the same as the claim 13 of the present application.
  • the resistor having the self-controlling positive temperature coefficient characteristic is formed by baking a paste on the surface of the substrate.
  • the infrared thermometer of the present invention can be manufactured efficiently by baking a resist having a self-controlling positive temperature coefficient characteristic on the surface of a substrate such as a printed circuit board.
  • An infrared thermometer according to a twenty-fifth aspect of the present invention is the infrared thermometer according to the thirteenth aspect, wherein the resistor having the self-controlling positive temperature coefficient characteristic is provided on the surface of the substrate.
  • the infrared thermometer according to the present invention can be efficiently manufactured by printing the surface of a resistor having a self-controlling positive temperature coefficient characteristic on the surface of a substrate such as a printed circuit board.
  • the infrared thermometer according to claim 26 of the present application is the infrared thermometer according to claim 14 of the present application, wherein the heating element region in which the heating element system is arranged and the cold junction temperature measuring element system.
  • the arranged cold junction temperature measuring element region is located outside the cold junction region with the hot junction region as the center, on the substrate on which the cold junction region is arranged, and in a horizontal direction with each other.
  • the infrared thermometer according to claim 27 of the present application is the infrared thermometer according to claim 14 of the present application, wherein the heating element system is The arranged heat generating element region and the cold junction temperature measuring element region in which the temperature measuring element system is arranged are located outside the cold junction region around the hot junction region, and the cold junction region is arranged.
  • Te On the board and vertically aligned with each other Unishi be disposed Te is an infrared thermometer characterized or c.
  • the heating element region in which the heating element system is arranged and the cold junction temperature measuring element region in which the temperature measuring element system is arranged are located outside the cold junction region around the hot junction region, and the cold junction region.
  • the infrared thermometer is characterized in that the infrared thermometers are arranged outside the substrate on which the regions are arranged, such that the regions are arranged in a vertical direction.
  • the arrangement of the hot junction region and the cold junction region that has been applied to the thermopile sensor of the outside line thermometer can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 29 of the present application is the infrared thermometer according to any one of claims 26 to 28 of the present application, wherein the heating element system is provided with a heating element region and
  • the infrared thermometer is characterized in that the shape of the cold junction temperature measuring element region where the cold junction temperature measuring element system is arranged is a continuous square.
  • the infrared thermometer according to claim 30 of the present application is the infrared thermometer according to any one of claims 26 to 28 of the present application, wherein the heating element system is provided with a heating element region and
  • the infrared thermometer is characterized in that the shape of the cold junction temperature measuring element region in which the cold junction temperature measuring element system is arranged is a discontinuous polygon separated by a certain angle.
  • the infrared thermometer according to claim 31 of the present application is the infrared thermometer according to any one of claims 26 to 28 of the present application, wherein the heating element system is provided with a heating element region and
  • the infrared thermometer is characterized in that the shape of the cold junction temperature measuring element region in which the cold junction temperature measuring element system is arranged is a continuous circle.
  • the infrared thermometer according to claim 32 of the present application is the infrared thermometer according to any one of claims 26 to 28 of the present application, wherein the heating element system is provided with a heating element region and
  • the infrared thermometer is characterized in that the shape of the cold junction temperature measuring element region in which the cold junction temperature measuring element system is arranged is a discontinuous circle separated by a certain angle.
  • an infrared thermometer according to a third aspect of the present invention is the infrared thermometer according to the thirteenth aspect of the present invention, wherein the cold junction region is incorporated in or on a silicon pellet or a silicon chip.
  • a resistor having a buried layer structure in a bracket or a silicon pellet or a silicon chip and having a self-controlling positive temperature coefficient characteristic is mixed with the cold junction region.
  • An infrared thermometer having a hybrid structure.
  • the infrared thermometer according to claim 34 of the present application is the infrared thermometer according to claim 13 of the present application, wherein the cold junction region is incorporated in or on the surface of the silicon pellet or silicon chip.
  • An infrared thermometer is the infrared thermometer according to the thirteenth aspect of the present invention, wherein the cold junction region has a thick film formed on the surface of the chip substrate made of an insulator. And a resistor having a self-controlling positive temperature coefficient characteristic and having a thick film hybrid structure hybridized with the cold junction region. Infrared thermometer.
  • the reference voltage setting method for a phase detector according to claim 36 of the present application is a method for setting a reference voltage value for a phase detector that receives a voltage value obtained by converting a physical value as an input. A plurality of resistors are freely combined, and a multi-step voltage value is sequentially input to a comparing means by using a plurality of combined resistors having different resistance values obtained thereby.
  • a reference voltage value setting method for a phase detector characterized in that a reference voltage value is determined by storing a resistance value designation address of the combination resistor in the storage means in the storage means.
  • the temperature measurement method using an infrared thermometer according to the present invention is characterized in that, in the temperature measurement method using an infrared thermometer according to the present invention, the input scanning means is controlled by an information processing device.
  • the input scanning means is controlled by an information processing device.
  • the first input voltage value and the second input voltage value are compared by the comparing means, and when the magnitude relation is reversed,
  • the storage in the information processing device can be performed.
  • the means is a temperature measurement method using an infrared thermometer, wherein the resistance value designation address at that time is stored.
  • the temperature measurement method using an infrared thermometer according to the present invention is characterized in that, in the temperature measurement method using an infrared thermometer according to the present invention, the input scanning unit is controlled by an information processing device. Inputting a second input voltage value to the comparing means, and comparing the first input voltage value and the second input voltage value by the comparing means, when these factors are reversed, By inputting the inversion information as an interrupt signal to a storage device incorporated in the phase detector itself, the storage means stores a resistance designation address at that time. Is a temperature measurement method.
  • a reference voltage value corresponding to a predetermined target physical reference value can be set with high accuracy.
  • the temperature measurement method using an infrared thermometer is a temperature measurement method using an infrared thermometer having a built-in thermopile sensor, wherein the reference voltage is set in advance in the negative region of the thermopile output voltage value. A value is set in advance, and the cold junction region of the thermopile sensor is unilaterally and forcibly heated to detect a phase inversion of the thermopile output voltage value with respect to the reference voltage value, thereby obtaining a measurement value.
  • This is a method for measuring temperature using an infrared thermometer, which measures the temperature of the object.
  • the temperature measurement method using the infrared thermometer according to the 40th aspect of the present invention is the temperature measurement method using the infrared thermometer according to the 39th aspect of the present invention, wherein the black has a predetermined temperature difference from the temperature of the thermopile sensor body.
  • the thermopile output voltage value output from the thermopile sensor is amplified at a specified magnification with respect to the core furnace, and the amplified voltage is input to the comparison means as a first input voltage value.
  • the multi-stage voltage value is sequentially input to the comparing means as a second input voltage value by using a plurality of combination resistors having different resistance values.
  • the comparing means compares the first input voltage value and the second input voltage value to detect a coincidence point, and detects the detected coincidence point.
  • a temperature measurement method using an infrared thermometer wherein the reference voltage value is determined by storing a resistance value designation address of the combination resistance in the storage means in the storage means.
  • the temperature measurement method using an infrared thermometer according to claim 41 of the present application is the temperature measurement method using an infrared thermometer according to claim 40 of the present application, wherein the input scanning means is controlled by an information processing device.
  • the input scanning means is controlled by an information processing device.
  • a temperature measuring method using an infrared thermometer wherein the inversion information is input to the information processing device as an interrupt signal, so that the storage means in the information processing device stores a resistance designation address at that time. It is.
  • a temperature measurement method using an infrared thermometer according to the present invention is a method for measuring temperature using an infrared thermometer according to the present invention, wherein the input scanning means is controlled by an information processing device.
  • the input scanning means is controlled by an information processing device.
  • the comparing means When a second input voltage value is input to the comparing means, and the first input voltage value and the second input voltage value are compared by the comparing means, and when the magnitude relation is reversed, By inputting the inversion information as an interrupt signal to a storage device incorporated in the phase detector itself, the storage means stores a resistance designation address at that time. This is a temperature measurement method.
  • a temperature measurement method using an infrared thermometer according to claim 43 of the present application is the temperature measurement method using an infrared thermometer according to claim 42, wherein the thermopile sensor heats a cold junction region. Infrared, at least one of the heating element system and the cold junction temperature measuring element system for measuring the temperature of the cold junction area is synchronized in the thermopile output and the thermal response speed. This is a temperature measurement method using a thermometer.
  • the temperature measurement method using the infrared thermometer according to claim 44 of the present application 43 The temperature measurement method using an infrared thermometer according to claim 3, wherein the three elements of the heating element system, the cold junction temperature measuring element system, and the cold junction region are directly thermally connected to each other.
  • This is a temperature measuring method using an infrared thermometer. With this configuration, it is possible to synchronize the thermal response speed of the cold junction temperature measuring element system with the output of the thermopile sensor as much as possible.
  • a temperature measurement method using an infrared thermometer according to claim 45 of the present application is the temperature measurement method using an infrared thermometer according to claim 4 of the present application.
  • the phase detector detects whether or not the thermopile output voltage value when heated is inverted with respect to the reference voltage value, and converts the presence or absence of the phase inversion into a 2-bit digital signal by the converter.
  • This is a temperature measuring method using an infrared thermometer, which detects the temperature of the cold junction temperature measuring element in synchronization with the digital signal.
  • the temperature measurement method using an infrared thermometer according to claim 46 of the present application is the temperature measurement method using an infrared thermometer according to claim 45 of the present application, wherein the cold junction region has a self-controlling positive temperature coefficient characteristic.
  • This is a temperature measurement method using an infrared ray thermometer, which incorporates a resistor including:
  • the temperature measurement method using an infrared thermometer according to claim 47 of the present application is the temperature measurement method using an infrared thermometer according to claim 46 of the present application, wherein the heating element system and the cold junction temperature measuring element are connected to each other.
  • thermopile sensor With this configuration, it is possible to safely and easily control the temperature of the cold junction region of the thermopile sensor.
  • the temperature measurement method using an infrared thermometer according to claim 48 of the present application is the temperature measurement method using an infrared thermometer according to claim 47 of the present application, wherein the heating element system generates heat and maintains a constant temperature. Constant temperature system and constant temperature range The cold junction region is maintained at a constant temperature before the temperature measurement is started by the steady temperature system, and the cold junction region is maintained after the temperature measurement is started by the steady temperature system.
  • a temperature measurement method using an infrared thermometer wherein the temperature is unilaterally and forcibly changed.
  • the cold junction region and the cold junction temperature measuring element can be heated in advance to a constant Piase temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, since the resistance change of the cold junction temperature measuring element is only the temperature rise in the hot junction area due to infrared energy from the measurement target, the thermal response speed becomes extremely fast, and the cold junction area It can be synchronized as much as possible with temperature changes.
  • the temperature measurement method using an infrared thermometer according to claim 49 of the present application is the temperature measurement method using an infrared thermometer according to claim 48, wherein the heating element system has a different self-saturation stable temperature.
  • a resistor with two types of self-control type positive temperature coefficient characteristics is used. It is characterized in that the resistor is stabilized at a constant temperature of the saturation stable temperature, while the resistor including the self-control type positive temperature coefficient characteristic with the higher self-saturation stable temperature is changed to an arbitrary temperature below the self-saturation stable temperature. This is a temperature measurement method using an infrared thermometer.
  • the cold junction area and the cold junction temperature measuring element are set to a predetermined bias temperature in advance by a resistor including a self-control type positive temperature coefficient characteristic having a lower self-saturation stable temperature, thereby shortening the measurement time and reducing the heat.
  • the response speed can be easily synchronized.
  • the temperature measurement method using the infrared thermometer according to the fiftyth aspect of the present invention is the temperature measurement method using the infrared thermometer according to the fourth aspect of the present invention, wherein a plurality of identical resistance characteristics electrically insulated between elements are provided.
  • a plurality of systems consisting of resistors with self-controlling positive temperature coefficient characteristics are installed in such a way as to be thermally connected directly to the cold junction area, and different voltages are applied to these from outside the thermopile, and Different departures 40
  • the temperature measurement method using an infrared thermometer according to claim 51 of the present application is the temperature measurement method using an infrared thermometer according to claim 47 of the present application, wherein the self-control of different resistances electrically insulated between elements is performed. At least one pair consisting of two resistors with positive temperature coefficient characteristics is incorporated so as to be thermally connected directly to the cold junction area, and the same voltage is applied to these from outside the thermopile.
  • This is a temperature measurement method using an infrared thermometer, which is characterized by generating a different heat generation temperature in a cold junction region.
  • the temperature measurement method using an infrared thermometer according to claim 52 of the present application is the self-control of a different resistor electrically insulated between elements in the temperature measurement method using an infrared thermometer according to claim 47 of the present application.
  • a system composed of a plurality of pairs consisting of two resistors with positive temperature coefficient characteristics is incorporated into multiple systems so as to be thermally connected directly to the cold junction area, and the same voltage is applied to these from outside the thermopile.
  • This is a temperature measurement method using an infrared thermometer, which generates a different heat generation temperature for each system in the cold junction region.
  • the temperature measuring method using an infrared thermometer according to the fifty-third claim of the present application is the temperature measuring method using an infrared thermometer according to the fourth present invention, wherein a plurality of identical resistance characteristics electrically insulated between elements are provided.
  • a plurality of systems consisting of a resistor with a self-controlling positive temperature coefficient characteristic are installed in such a way as to be thermally connected directly to the cold junction area, and different voltages are applied to these from outside the thermopile, respectively.
  • This is a temperature measurement method using an infrared thermometer, which is characterized by generating a different heat generation temperature in a cold junction region.
  • the temperature measurement method using an infrared thermometer according to the fifty-fourth claim of the present application is the same as the temperature measurement method using an infrared thermometer according to the fourth invention, but also includes a method of measuring the resistance of a different resistor electrically insulated between elements.
  • a pair of two or more resistors including a control-type positive temperature coefficient characteristic is incorporated so as to be thermally connected directly to the cold junction region, and the same voltage is applied to these from outside the thermopile, This is a temperature measurement method using an infrared thermometer, which generates different heat generation temperatures in the cold junction region for each system.
  • thermometer using the infrared thermometer according to claim 55 of the present application 48
  • a system comprising a plurality of pairs of two resistors each including a self-controlling positive temperature coefficient characteristic of different resistances electrically insulated between elements is combined.
  • a plurality of systems so as to be thermally connected directly to the cold junction area, apply the same voltage to them from outside the thermopile, and generate different heat generation temperatures in the cold junction area for each system.
  • the self-control type positive temperature coefficient characteristic is obtained by arranging a plurality of resistors or a plurality of pairs including the self-control type positive temperature coefficient characteristic.
  • the resistors included are heated for each system, enabling fine temperature control.
  • FIG. 1 is a block diagram showing a configuration of a phase detector according to a first embodiment of the present invention.
  • FIG. 2 is a partially cutaway perspective view of an infrared thermometer according to a second embodiment of the present invention.
  • FIG. 3 is a cross-sectional view of an infrared detector in the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 4 is a top view and a sectional view of a main part of an internal structure of a thermopile sensor of the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 5 is a top view of a thermopile portion of the thermopile sensor of the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 6 is a top view of a main part of an internal structure in a thermopile sensor of the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 7 is a graph showing resistance characteristics of a resistor including a self-control type positive temperature coefficient characteristic used in an infrared thermometer according to a second embodiment of the present invention.
  • FIG. 8 illustrates a temperature measurement method using an infrared thermometer according to the second embodiment of the present invention. It is a block diagram for clarification.
  • FIG. 9 is a flowchart of a temperature measuring method in the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 10 is a time-temperature curve showing a temperature control method at a bias temperature in the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 11 is a time-temperature curve showing a temperature control method in temperature measurement by the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 12 is a time-temperature curve showing a temperature control method in temperature measurement by the infrared thermometer according to the second embodiment of the present invention.
  • FIG. 13 is a top view and a sectional view of a main part of an internal structure of a thermopile sensor of the infrared thermometer according to the third embodiment of the present invention.
  • FIG. 14 is a top view and a sectional view of a main part of an internal structure of a thermopile sensor of an infrared thermometer according to a fourth embodiment of the present invention.
  • FIG. 15 is a top view and a sectional view of a main part of an internal structure of a thermopile sensor of an infrared thermometer according to a fifth embodiment of the present invention.
  • FIG. 16 is a sectional view showing an example of the configuration of a conventional infrared thermometer.
  • FIG. 17 is a block diagram for explaining a temperature measuring method using a conventional infrared thermometer.
  • FIG. 18 is a graph showing the behavior of each output at the time of temperature measurement using a conventional infrared thermometer.
  • Heating element electrodes 4 Cold junction temperature measuring element electrodes
  • the phase detector 1 includes a comparison means 2, a resistor array 3 including a plurality of resistors 3a, 3b,... 3 ⁇ , and a drive IC 5a.
  • a voltage value corresponding to a predetermined value of the physical value to be measured is output.
  • the output voltage value A at this time is input to the comparison means 2.
  • the information processing device 4 drives the drive IC 5a to combine a plurality of resistors in the resistor array 3, and sequentially scans the multi-stage voltage value B to the comparing means 2 using the combined resistors.
  • the comparing means 2 compares the input voltage value A with the input voltage value B. Then, when these magnitude relationships are inverted, the inverted information is input to the information processing device 4 as an interrupt signal, so that the information processing device 4 reads the resistance value designation address at that time. That is, the information processing device 4 recognizes one of the 2 N different resistance values obtained by combining the N resistors existing in the resistance array 3 by the interrupt signal from the comparing means 2 and simultaneously incorporates the built-in resistance value.
  • the drive address of this combination resistor, ie, the output bit state of the information processing device 4 is stored in a memory such as an EEPROM or a RAM.
  • the resistance designation address stored in this manner is converted into a second input voltage for the comparing means 2, and this is used as a reference voltage for the comparing means 2.
  • the accuracy of the reference voltage value based on the resistance value designation address stored in this way is determined by the number N of resistors in the resistor array 3. That is, since there are 2 N combinations of resistances obtained by using N resistors, the voltage value input to the comparison means 2 is also 2 N , so that the number of resistors N is large. , The accuracy is improved.
  • the reference voltage value is stored by storing the drive address of the combined resistor drive IC 5a using the memory incorporated in the information processing device 4, that is, the output bit state of the information processing device 4.
  • a memory such as an EEPROM or a RAM is incorporated in the phase detector as a storage means for storing the drive address of the drive IC 5a of the combination resistance.
  • the memory only needs to store the output bit state of the phase detector, and the reference voltage value can be set by the phase detector alone.
  • phase detector is an ASIC or H In a 1C (hyperchip IC) one-chip IC, or in a device composed of various Ic and discrete parts on a circuit board, it is possible to set the reference voltage value for each one-chip IC or device.
  • the ear thermometer 7 includes a main body case 8, an infrared detection unit 9 and a temperature measurement circuit unit 10 housed in the main body case 8.
  • the infrared detecting section 9 has a waveguide 11 and a thermopile sensor 12, and the temperature measuring circuit section 10 has a print substrate 13, a switch 14, and a display device 15.
  • the printed circuit board 13 incorporates various elements such as a comparator for setting a reference temperature value.
  • the infrared detecting section 9 and the temperature measuring circuit section 10 are incorporated and fixed in a plate-shaped print board assembly 16 as shown in FIG.
  • the waveguide 11, the thermopile sensor 12, and the printed circuit board 13 are attached to the printed circuit board assembly 16.
  • the nozzle 17 at the tip of the main body case 8 is formed so as to become thinner toward the tip so as not to be inserted deeply into the ear canal.
  • the infrared detecting section 9 is disposed at the front end of the main body case 8 and detects infrared light incident through a hole provided at the front end of the nozzle 17.
  • the infrared detector 9 is installed in a thermopile sensor 12 for detecting infrared rays radiated from the eardrum and a nozzle 17 at the tip of the main body case 8, and is radiated from the eardrum.
  • a waveguide 11 for transmitting weak infrared rays efficiently.
  • thermopile sensor 12 Next, main parts of the internal structure of the thermopile sensor 12 are shown in FIG. 4 and FIG.
  • a heat sink 18 made of silicon and having a thickness of about several hundred microns with a hole 19 formed in the center is a hot junction support film having electric insulation on the upper and lower surfaces. 20 and an insulating thin film 38 are formed.
  • 20 is formed of silicon oxide or silicon nitride or the like, and its thickness 0 09340
  • thermopile 25 is formed by connecting thermocouples in series. Output terminals 26 are provided at both ends of the thermopile 25.
  • the thermal bonding part 24 has its upper surface covered with an infrared absorber 27.
  • the thermopile 25 may be formed in a shape as shown in FIG. 6, and the thermal junction 24 may not be covered with the infrared absorber.
  • the region where the cold junction 23 is formed is referred to as a cold junction region 28 and the region where the hot junction 24 is formed is referred to as a hot junction region.
  • a heating element 30 composed of a resistor having a self-control type positive temperature coefficient characteristic and a resistive antibody including a self-control type positive temperature coefficient characteristic are formed.
  • the cold junction temperature measuring element 31 is located outside the four sides of the cold junction area 28 when viewed from the center of the diaphragm 32, and the cold junction temperature measuring element 31 and the heating element 30 are arranged in this order. Have been.
  • the heating elements 30 and the cold junction temperature measuring elements 31 are electrically connected to each other, and electrodes 33 and 34 made of Au or the like are formed at both ends.
  • the region where the heating element 30 is formed is referred to as a heating element region.
  • the area where the cold junction temperature measuring element 31 is formed is referred to as a cold junction temperature measuring element area 36, and this name will be used as necessary hereinafter.
  • thermopile sensor 12 is fixed to the sensor stem 37 by die-bonding the thermopile sensor 12 to the sensor stem 37 as described above.
  • thermopile sensor 12 a thermal bonding support film 20 made of silicon oxide or silicon nitride and having a thickness of several microns is formed on both surfaces of a silicon pellet or silicon chip serving as a heat sink 18 or a silicon wafer by a CVD apparatus or the like.
  • dissimilar metals the first thermocouple material 21 and the second thermocouple material 22
  • thermopile 25 examples include polysilicon and aluminum, or bismuth and antimony.
  • a resistor including a self-controlling positive temperature coefficient characteristic of the heating element 30 and the cold junction temperature measuring element 31 is formed by vapor deposition. They can also be formed by paste baking. Alternatively, it may be formed by planar printing.
  • thermopile sensor 12 is completed.
  • a resistor with a self-control type positive temperature coefficient characteristic has a property that its electrical resistance increases as the temperature of the heating element rises due to energization. Body.
  • resistors with self-controlling positive temperature characteristics have the property that the electrical resistance increases rapidly at a certain temperature (self-saturation stable temperature).
  • self-saturation stable temperature Generally, when a current flows through a resistor, the resistor generates heat.
  • a resistor with a self-controlling positive temperature coefficient characteristic has an abrupt increase in electrical resistance at a self-saturation stable temperature, so that the flowing current is suppressed.
  • the resistor including the self-control type positive temperature coefficient characteristic is maintained at a constant self-saturation stable temperature. That is, the resistor including the self-control type positive temperature coefficient characteristic is a resistor that can control the heat generation temperature by itself.
  • the conductive resin is a conductive resin made of a resin, or a mixture of such a conductive resin and a semiconductor as appropriate.
  • the resistor having the self-controlling positive temperature coefficient characteristic of the heating element 30 generates heat by applying a predetermined constant voltage to the heating element 30 to control the heating of the cold junction region 28. Then, when the temperature reaches the self-saturation stable temperature, the temperature is naturally maintained at a constant temperature. Therefore, an overheating accident can be prevented by itself without providing a complicated safety device.
  • thermometer ear thermometer
  • the thermopile sensor 12 outputs a voltage that depends on the amount of infrared radiation radiated from the measurement target and the temperature of the cold junction region 28. That is, the thermopile sensor 12 outputs a voltage corresponding to the difference between the temperature of the measurement target (that is, the temperature of the hot junction region 29) and the ambient environment temperature (the temperature of the cold junction region 28).
  • the output voltage value is output as a positive voltage value when the temperature of the hot junction region 29 is higher than the temperature of the cold junction region 28, and the temperature of the hot junction region 29 is If the temperature is lower than, it is output as a negative voltage value.
  • thermopile output voltage value becomes negative
  • the temperature is controlled only by the heating control by the heating element 30.
  • a reference voltage value is provided in the negative region of the thermopile output. Then, phase inversion with respect to the reference voltage value when the cold junction region 28 is heated by the heating element 30 is detected, and the temperature is measured in synchronization with the phase inversion.
  • phase detector built into the printed circuit board 13 is used.
  • the basic configuration of this phase detector is almost the same as that shown in FIG. 1 in the first embodiment, but will be explained with reference to the block diagram shown in FIG. 8 for further understanding. I do.
  • thermopile output voltage value For an ear thermometer, the maximum permissible ambient temperature for measurement was estimated to be 40, and the minimum temperature for measurement (eardrum) at night was estimated to be 35 ° C, and the voltage value corresponding to the difference (minus 5.0 °) was calculated. Set to the negative side of the thermopile output voltage value.
  • thermopile sensor 12 for this black body furnace is taken out from the thermopile output terminal 40 and input to the phase detector 1.
  • an amplifier 39a, a comparing means 2, a drive IC 5a, and a resistor array 3 are incorporated.
  • Sa The mopile output voltage is first amplified by the amplifier 39a at a specified magnification, and then input to the comparing means 2 as a first input voltage value.
  • the information processing device 4 drives the drive IC 5a, combines the N resistors in the resistor array 3, and outputs the 2N multi-step voltage values obtained by these combined resistors to the comparing means 2.
  • input scanning is sequentially performed as a second input voltage value.
  • the comparing means 2 compares the first input voltage value and the second input voltage value, and when the magnitude relationship is inverted, the inverted information is input to the information processing device 4 as an interrupt signal. Then, the information processing device 4 reads the resistance value designation address at that time. That is, the information processing device 4 recognizes one resistance value from the 2 N different resistance values obtained by combining the N resistors present in the resistance array 3 by the interrupt signal from the comparing means 2 and simultaneously processes the information.
  • the drive IC drive 5 a address of the combination resistor, that is, the output bit state of the information processing device 4 is stored in a memory such as an EEPROM or a RAM built in the device 4.
  • memories such as EEPROM and RAM can be incorporated in the phase detector 1.
  • the reference voltage can be stored by the phase detector alone.
  • the resistance value designation address stored in this way is converted into a second input voltage for the comparing means 2, and this is used as a reference voltage for the comparing means 2.
  • the accuracy of the reference voltage value based on the resistance value designation address stored in this way is determined by the number N of resistors in the resistor array 3. That is, since there are 2 N combinations of resistances obtained using N resistors, there are also 2 N voltage values that are input-scanned to the comparison means 2. The accuracy increases as the size increases.
  • resistor array is composed of one of two resistors, to obtain a 2 1 2 That voltage value of 4 0 9 6 stages by combination resistance. Therefore, when this resistor array is used, the reference voltage corresponding to the desired reference temperature value (minus 5.0 deg) 'is obtained at a temperature accuracy of 5.0 / 4096, that is, 0.0012 deg. Value can be set.
  • the output voltage value between thermopile products is ⁇ 20 to 30% error. It is said to make a difference. If an error of ⁇ 30% is included, the temperature conversion value of the output voltage value of the thermopile is 3.5, which is minus 5.
  • O deg which is the difference of the black body furnace reference temperature with respect to the ambient temperature. It is set in the range of ⁇ 6.5 deg. Therefore, as described above, when a reference voltage scan of 406 steps is performed with respect to the swing width of 3.0 deg, the temperature accuracy becomes 3.0 / 4096, that is, 0.000773 deg. It is also possible to set even higher precision.
  • the amplifier 39a inside the phase detector 1 connected to the thermopile sensor 12 amplifies the minute voltage output from the thermopile sensor 12 at a specified magnification.
  • the comparing means 2 connected to the amplifier 39a determines whether or not the output voltage value of the thermopile sensor 12 amplified by the amplifier 39a is inverted with respect to a preset reference voltage value. Judge and send it to the information processing device 4 as a 2-bit digital signal of “Yes” or “No”.
  • the resistor including the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 31 is a temperature measuring element for measuring the temperature of the cold junction area 28, and the change of the self-resistance value is converted to a voltage value.
  • This voltage value is amplified by an amplifier 39 b connected to a resistor including a self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 31.
  • the information processing device 4 includes an A / D converter. The information processing device 4 synchronizes the output signal of the cold junction temperature measuring element 31 amplified by the amplifier 39 with the output signal of the phase inversion “yes” from the comparison means 2 inside the phase detector 1 in accordance with A. / D to convert. Thereafter, arithmetic processing is performed to obtain the temperature value of the measurement target, and this is displayed on the display device 15.
  • the procedure is roughly divided into a measurement preparation stage and a measurement stage.
  • the measurement preparation stage will be described.
  • the switch 14 When the switch 14 is turned on, the information processing device 4 operates (1), the output of the cold junction temperature measuring element 31 is input via the amplifier 39 b, and the A / B
  • the temperature value of the cold junction region 28 is obtained by converting the temperature by the D converter, and it is determined whether or not the temperature value is equal to or higher than a predetermined value (for example, a value near the eardrum temperature of 34 ° C). Yes (2).
  • the temperature value of the cold junction region 28 is equal to or higher than the predetermined value, it is determined whether or not the change in the temperature value (temperature change due to disturbance) is within an allowable range (3). If the rate of change is within a certain range, it is further determined whether or not such a temperature equilibrium state has continued for a specified time or more (whether a stable state with little disturbance for a certain time or more continues). Yes (4).
  • the drive IC 5 b is driven by the information processing device 4, and the cold junction region 28 and the cold junction temperature measurement are performed by the heating element 30.
  • the element region 36 is heated to a constant bias temperature (5).
  • This bias temperature is appropriately determined, for example, by setting it at 34 ° C. which is near the eardrum temperature.
  • the heating element 30 is subjected to feedback control as shown in FIG.
  • the feedback control which is generally performed to maintain a constant temperature, there are problems in that it takes a long time for the temperature to become constant and that the temperature is likely to change due to temperature disturbance. Become.
  • the temperature is forcibly fluctuated within the specified threshold value for the target constant temperature value for the purpose of applying the bias temperature and shortening the measurement time.
  • This is “pendulum temperature control” (see Fig. 10).
  • the temperatures of the cold junction region 28 and the cold junction temperature measuring element region 36 are within the specified threshold region around the set Piass temperature, the effect can be sufficiently obtained.
  • the time required to reach the Piass temperature can be shortened, and if there is a disturbance factor in the temperature, there is no particular problem as long as the influence is not so great as the dog.
  • the information processing device 4 determines whether the temperature of the cold junction region 28 is within the specified threshold region based on the output of the cold junction temperature measuring element 31 in this way, and determines the temperature of the “pendulum temperature control”. Determine whether the gradient is within the specified rate of change (ie, the temperature disturbance is within the permissible range) (3), and if both the temperature and the rate of change are It is determined whether the rate of change within the regulation has continued for the prescribed time or more (whether a stable state with little disturbance has continued for a certain time or more) (4).
  • the temperature change rate of the cold junction region 28 is within the specified range (the temperature fluctuation due to disturbance is below a certain level). If it is determined that the condition has continued for the specified time or longer, it is possible to immediately measure the temperature of the target for measurement. However, even if it is determined that the cold junction region 28 is stable at a constant ambient temperature or Piers temperature, it is possible that the cold junction region 28 is slightly affected by disturbance within a certain range. is there. As a result, it is inevitable that measurement errors due to such disturbances will occur, albeit minutely, in the temperature measurement value at the time of measurement. Therefore, it is desirable to perform correction by predicting to some extent fluctuations in measurement accuracy of measured values due to temperature disturbance. The procedure is described below.
  • the internal storage device of the information processing device 4 previously stores, as a change rate table, a change rate within a specified threshold value with respect to the ambient environmental temperature and the temperature when the “pendulum type temperature control” is performed. Then, the information processing device 4 reads the change rate table (6), compares it with the actually measured temperature change rate of the cold junction region 28, and finds a matching numerical value (7). The degree of influence due to disturbance is determined (8), and the degree of correction in the measured temperature value is determined (9), and displayed on the display device 15 (10). As a display method at this time, for example, it is conceivable to rank the degree of the correction in advance and display the rank. Also at this stage Since the preparation for the measurement is completed, it is desirable that the display device 15 shows the fact at the same time.
  • the process proceeds to the temperature measurement stage of the measurement target.
  • the thermometer In the ear thermometer 7, the thermometer is inserted into the ear canal (11) The temperature is measured by infrared rays radiated from the eardrum. At this time, it is important to insert the infrared ray radiated from the eardrum at an optimum angle so that the amount of incidence on the warm junction 24 becomes a certain amount or more. Therefore, when the measurer inserts the ear thermometer into the ear canal and adjusts its angle (12), it is desirable that the optimal angle be shown so that it is easy to understand. For example, search for the peak value of infrared radiation emitted from the eardrum, and emit a notification sound (buzzer, etc.) near the peak value [13]. At this stage, when the measurer presses the measurement start switch, for example, the measurement start switch (14), the temperature measurement is started.
  • the measurement start switch for example, the measurement start switch (14)
  • the output voltage of the cold junction temperature measuring element 31 amplified by the amplifier 39 b to the specified magnification is input to the information processing device 4. Then, the temperature is converted by the built-in A / D converter to obtain the temperature value of the cold junction region 28 again (15).
  • the drive IC 5 b is driven by the information processing device 4 to heat the heating element 30, thereby forcibly heating the cold junction area 28 and the cold junction temperature measuring element area 36 (16) .
  • heating is performed from a bias temperature (when the initial temperature value is equal to or lower than a predetermined value of 34 ° C) or an ambient environment temperature (when the initial temperature value is equal to or higher than a predetermined value of 34 ° C). Is started. As described above, when heating is started rapidly, the thermal equilibrium state of the thermopile collapses rapidly, and the “heat shock phenomenon” occurs, which becomes uncontrollable. Therefore, it is important to start heating gently (soft start) so as not to cause such a "heat shock phenomenon” at the start of heating.
  • Fig. 11 shows the behavior when the ambient temperature is lower than the measurement target temperature
  • Fig. 12 shows the behavior when the ambient temperature is higher than the measurement target temperature.
  • control is performed so that the output voltage of the thermopile decreases linearly with a constant gradient with respect to the heating time.
  • the thermopile output voltage is passed at a constant gradient with respect to the reference voltage value of the phase detector 1, and the phase inversion is forcibly generated for the aforementioned reference voltage value.
  • this phase inversion is phase detected It is detected by the comparison means 2 built in the device 1 and sent to the information processing device 4 as a 2-bit digital signal of phase inversion “present” and “absent”.
  • the information processing device 4 determines whether or not the phase inversion is “present” or “absent” based on the 2-bit digital signal (17). Send a signal to stop heating. At this time, if the heating stop signal is not sent for some reason such as a malfunction of the device, the voltage is continuously applied to the heating element 30.
  • a resistor having a self-controlling positive temperature coefficient characteristic is used as the heating element 30, and is maintained at a constant self-saturation stable temperature, and is not overheated. Therefore, for example, in an ear thermometer, using a resistor with a self-regulating positive temperature coefficient characteristic having a self-saturation stable temperature of 50 ° C prevents overheating accidents without using a special safety device. It is.
  • the output of the cold junction temperature measuring element 31 is input to the information processing device 4 via the amplifier 39 b in synchronization with the signal of “presence” of phase inversion, and the AZD conversion built in the information processing device 4 is performed.
  • the temperature conversion is performed by the exchanger.
  • a temperature value corresponding to a preset threshold reference value is subtracted from the A / D conversion temperature value with respect to the above-mentioned negative region of the thermopile output, and the measured temperature is calculated. Further, the temperature disturbance is corrected to obtain the temperature of the cold junction area 28 (18), and this temperature value is displayed on the display device 15
  • the temperature of the cold junction region 28 obtained in this manner is nothing less than the temperature of the hot junction region 29, that is, the temperature of the gate at the time of measurement.
  • highly accurate measurement with little error can be performed.
  • the measurement time can be greatly reduced. More importantly, even when the ambient temperature is higher than the measurement target temperature, the temperature of the cold junction area 28 is controlled only by heating, resulting in highly accurate temperature measurement. Can be performed.
  • the cold junction temperature measuring element area 36 and the heating element area 35 are arranged outside the cold junction area 28 when viewed from the center of the diaphragm 32 in this order. May be used as the heating element area 35 and the cold junction temperature measuring element area 36.In this case, when the Piase temperature is applied to the cold junction area 28, the constant temperature is reached in a shorter time. Becomes possible.
  • a fourth embodiment of the present invention will be described with reference to the drawings. However, description of the same parts as those of the above-described embodiment will be omitted, and only different parts will be described.
  • FIG. 13 is a top view and a sectional view of a thermopile sensor section in the infrared thermometer according to the fourth embodiment of the present invention.
  • a heating element 30 composed of a resistor having a self-control type positive temperature coefficient characteristic and a cold junction composed of a resistor also having a self-control type positive temperature coefficient characteristic
  • the partial temperature measuring element 31 is stacked and arranged.
  • thermopile sensor 12 The manufacturing process of the thermopile sensor 12 will be described. First, a thermal bonding portion support film 20 made of silicon oxide or silicon nitride is formed to a thickness of several microns on both surfaces of a silicon pellet or a silicon chip to be a heat sink 18 or a silicon wafer by a CVD device or the like. Next, the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 31 is deposited on the thermal junction support film 20 on the upper surface side of the heat sink 18 by vapor deposition, paste baking, or sheet printing. Then, a thermal bonding support film 20 made of silicon oxide or silicon nitride is formed thereon to a thickness of several microns again by a CVD apparatus or the like. Then heat sink 1
  • thermopile having a cold junction 23 and a hot junction 24 by connecting in series the dissimilar metals (first thermocouple material 21 and second thermocouple material 22) on the surface of 8 Form 2 5.
  • a resistor having a self-controlling positive temperature coefficient characteristic of the heating element 30 is formed on the surface of the heat sink 18 by an evaporation method, a paste baking method, or a sheet printing method. Insulating thin film 3 on both sides of heat sink 18
  • thermopile 25 After depositing and covering 8, the area under the thermopile 25 is partially removed by jet etching. Thereafter, the oxide film is removed by wet etching with hydrofluoric acid or the like, whereby the thermopile sensor 12 is completed.
  • the cold junction area 28 and the cold junction temperature measuring element area 36 are arranged adjacent to each other, and the heating element area 35 and the cold junction temperature measuring element area 36 are arranged vertically. They are arranged to overlap.
  • thermopile sensor of the infrared thermometer of the present embodiment the heating element area 3
  • the cold junction temperature measuring element region 36 is forcibly made dependent on the temperature of the heating element 30.
  • the cold junction region 28 and the cold junction temperature measuring element region 36 are raised in advance to a certain bias temperature. Therefore, the resistance change of the cold junction temperature measuring element 31 is only the temperature rise of the hot junction area 29 due to the infrared energy from the measurement target, and the thermal response speed of the cold junction temperature measuring element 31 Becomes extremely fast, it becomes possible to synchronize with the output response speed of the thermopile sensor 12.
  • FIG. 14 shows a thermopile sensor according to the present embodiment.
  • the present embodiment is characterized in that the heating element 30 is further divided into a steady-temperature heating element 41 and a variable-temperature heating element 42.
  • the steady-state temperature heating element 41 plays a role of maintaining the cold junction region 28 at a constant bias temperature before starting temperature measurement.
  • the variable temperature system heating element 42 has a role of unilaterally and forcibly changing the temperature of the cold junction area 28 after the start of the temperature measurement. That is, heating to the pipe temperature in the measurement preparation stage and forcible heating of the cold junction region 28 in the measurement stage, which were performed by the single heating element 30 in the second embodiment, are normally performed.
  • the roles of the temperature system heating element 41 and the variable temperature system heating element 42 are shared. Each of these heating elements is composed of a resistor having a self-control type positive temperature coefficient characteristic, and is composed of a resistor having a self-controlling positive temperature coefficient characteristic.
  • a heater element 42 having a lower temperature than a resistive element having a self-controlling positive temperature coefficient characteristic is used.
  • a resistor having a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is a bias temperature of 34 ° C is used as the steady-state temperature-generating heating element 41, and a temperature-controllable heating element is used.
  • a resistor including a self-controlling positive temperature coefficient characteristic whose self-saturation stable temperature is 50 ° C. is used as the element 42.
  • the steady-state temperature heating element 41 is heated to 34 ° C after being supplied with the specified voltage value in the measurement preparation stage, and then further heated. It is maintained at a constant temperature by itself. Furthermore, even when there is a disturbance factor in the temperature such as a sudden change in the ambient temperature, the temperature is adjusted and maintained at this temperature. Therefore, the feed pack control as performed in the second embodiment is not required, and the apparatus configuration can be simplified, the cost can be reduced, and the strength can be improved.
  • the variable heating system heating element 42 is maintained at the Pierce temperature of 34 ° C or the ambient temperature following the heating by the steady temperature system heating element 41 without applying voltage during the measurement preparation stage. You.
  • the information processing device 4 determines whether or not the phase inversion of the thermopile output voltage with respect to the reference voltage value is “present” or “absent” based on the 2-bit digital signal. Sends a signal to stop heating the system heating element 42. At this time, if the heating stop signal is not sent for some reason such as a malfunction of the device, the voltage is continuously applied to the variable system heating element 42. However, also at this time, the resistor including the self-control type positive temperature coefficient characteristic of the variable system heating element 42 is maintained at a constant temperature of 50 ° C., which is a self-saturation stable temperature, and does not rise any more. No overheating accidents can be prevented without using special safety devices.
  • the cold junction temperature measuring element area 36 and the heating element area 35 are arranged outside the cold junction area 28 as viewed from the center of the diaphragm 32, and the heating element area 3 is arranged in this order. 5.
  • the cold junction temperature measuring element area 36 may be used.In this case, when a bias temperature is applied to the cold junction area 28, it is possible to reach a constant temperature in a shorter time. Is the same as in the second embodiment.
  • FIG. 15 shows a thermopile sensor section of the infrared thermometer according to the present embodiment.
  • a cold junction temperature measuring element 31 As shown in FIG. 15, a cold junction temperature measuring element 31, a steady temperature system heating element 41, and a variable temperature system heating element 42 are stacked and arranged.
  • thermopile sensor 12 The manufacturing process of the thermopile sensor 12 will be described. First, a thermal bonding made of silicon oxide or silicon nitride is applied to both sides of a silicon pellet or silicon chip or silicon wafer to become a heat sink 18 by CVD equipment. 0 09340
  • the part support film 20 is formed to a thickness of several microns.
  • the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 31 is deposited on the thermal junction support film 20 on the upper surface side of the heat sink 18 by vapor deposition, paste baking, or sheet printing.
  • a thermal bonding support film 20 made of silicon oxide or silicon nitride is formed thereon to a thickness of several microns again by a CVD apparatus or the like.
  • thermocouple material 21 and second thermocouple material 22 are formed on the surface of the heat sink 18 and connected in series to form the cold junction 23 and the hot junction 24.
  • the formed thermopile 25 is formed.
  • a resistor having a self-controlling positive temperature coefficient characteristic of the variable temperature system heating element 42 is formed on the surface of the heat sink 18 by a vapor deposition method, a paste baking method, a sheet printing method, or the like.
  • a thermal bonding support film 20 made of silicon oxide or silicon nitride is formed to a thickness of several microns again by a CVD apparatus or the like.
  • a resistor including the self-control type positive temperature coefficient characteristic of the steady temperature system heating element 41 is formed by an evaporation method, a paste baking method, a sheet printing method, or the like.
  • the cold junction temperature measuring element 31, the steady temperature system heating element 41, and the variable temperature system heating element 42 are stacked and arranged, and an insulating temperature junction support is provided therebetween. With the film 20 interposed, they are electrically insulated from each other, and exhibit exactly the same operation as the third embodiment when measuring the temperature. Moreover, it has the feature that the device configuration is compact.

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  • General Physics & Mathematics (AREA)
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Abstract

L'invention concerne un système de comparaison qui, dans un détecteur de phase, compare une première tension appliquée selon une valeur de référence de grandeur physique objective et une seconde tension multiniveau appliquée successivement à l'aide d'une résistance combinée. On détecte une inversion de relation entre ces valeurs, et l'adresse de résistance combinée, au moment de la détection, est enregistrée en mémoire, tenant lieu de tension de référence arbitraire. Le détecteur de phase permet ainsi de fixer un seul de tension préétabli, dans une zone négative de tension de sortie de thermopile de thermomètre à infrarouge. Ensuite, la température d'une zone de jonction froide de la thermopile est chauffée et contrôlée et la température de cette zone est mesurée de façon synchrone avec une inversion de phase de la tension de sortie de thermopile, par rapport à un seuil de tension électrique.
PCT/JP2000/009340 2000-12-27 2000-12-27 Detecteur de phase, procede d'etablissement de valeur de reference de detecteur de phase, thermometre a infrarouge, et procede de mesure de temperature sur ce thermometre WO2002055975A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/009340 WO2002055975A1 (fr) 2000-12-27 2000-12-27 Detecteur de phase, procede d'etablissement de valeur de reference de detecteur de phase, thermometre a infrarouge, et procede de mesure de temperature sur ce thermometre

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/009340 WO2002055975A1 (fr) 2000-12-27 2000-12-27 Detecteur de phase, procede d'etablissement de valeur de reference de detecteur de phase, thermometre a infrarouge, et procede de mesure de temperature sur ce thermometre

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WO2002055975A1 true WO2002055975A1 (fr) 2002-07-18

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900162A (en) * 1989-03-20 1990-02-13 Ivac Corporation Infrared thermometry system and method
JPH0417301A (ja) * 1990-05-10 1992-01-22 Mitsui Toatsu Chem Inc 正特性薄膜サーミスタ
US5218362A (en) * 1992-07-02 1993-06-08 National Semiconductor Corporation Multistep analog-to-digital converter with embedded correction data memory for trimming resistor ladders
JPH0815041A (ja) * 1994-06-30 1996-01-19 Toshiba Corp 熱塊検出装置
WO1999058490A2 (fr) * 1998-05-08 1999-11-18 Akzo Nobel N.V. Nouveaux aryl-hydro naphtalene alcane-amines
WO2000004353A1 (fr) * 1998-07-14 2000-01-27 Kazuhito Sakano Thermometre de mesure de rayonnement
WO2000066988A1 (fr) * 1999-04-28 2000-11-09 Kazuhito Sakano Thermometre de mesure du rayonnement et procede de mesure de temperature a l'aide de celui-ci

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900162A (en) * 1989-03-20 1990-02-13 Ivac Corporation Infrared thermometry system and method
JPH0417301A (ja) * 1990-05-10 1992-01-22 Mitsui Toatsu Chem Inc 正特性薄膜サーミスタ
US5218362A (en) * 1992-07-02 1993-06-08 National Semiconductor Corporation Multistep analog-to-digital converter with embedded correction data memory for trimming resistor ladders
JPH0815041A (ja) * 1994-06-30 1996-01-19 Toshiba Corp 熱塊検出装置
WO1999058490A2 (fr) * 1998-05-08 1999-11-18 Akzo Nobel N.V. Nouveaux aryl-hydro naphtalene alcane-amines
WO2000004353A1 (fr) * 1998-07-14 2000-01-27 Kazuhito Sakano Thermometre de mesure de rayonnement
WO2000066988A1 (fr) * 1999-04-28 2000-11-09 Kazuhito Sakano Thermometre de mesure du rayonnement et procede de mesure de temperature a l'aide de celui-ci

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