WO2001088495A1 - Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges - Google Patents

Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges Download PDF

Info

Publication number
WO2001088495A1
WO2001088495A1 PCT/JP2000/002597 JP0002597W WO0188495A1 WO 2001088495 A1 WO2001088495 A1 WO 2001088495A1 JP 0002597 W JP0002597 W JP 0002597W WO 0188495 A1 WO0188495 A1 WO 0188495A1
Authority
WO
WIPO (PCT)
Prior art keywords
temperature
cold junction
infrared thermometer
self
heating element
Prior art date
Application number
PCT/JP2000/002597
Other languages
English (en)
Japanese (ja)
Inventor
Kazuhito Sakano
Original Assignee
Kazuhito Sakano
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kazuhito Sakano filed Critical Kazuhito Sakano
Priority to AU2000238408A priority Critical patent/AU2000238408A1/en
Priority to PCT/JP2000/002597 priority patent/WO2001088495A1/fr
Publication of WO2001088495A1 publication Critical patent/WO2001088495A1/fr

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables

Definitions

  • thermometer Infrared thermometer and method of measuring temperature of infrared thermometer
  • the present invention relates to an infrared thermometer and a method of measuring the temperature of an infrared thermometer, and more particularly, to an infrared thermometer that measures the temperature of a measurement target by sensing infrared radiation radiated from a measurement target, and an infrared thermometer.
  • the present invention relates to a temperature measuring method using a thermometer.
  • thermometers have been used to detect infrared radiation emitted from a measurement target to measure the temperature of the measurement target.
  • thermometers emit more radiation from the eardrum and surrounding tissues than contact-type thermometers such as a sublingual thermometer that measures the temperature in the oral cavity and an axillary thermometer that measures the temperature of the axilla for hygiene reasons.
  • contact-type thermometers such as a sublingual thermometer that measures the temperature in the oral cavity and an axillary thermometer that measures the temperature of the axilla for hygiene reasons.
  • the demand for non-contact ear thermometers, which measure body temperature by detecting infrared rays, is increasing.
  • Ear-type thermometers are also attracting attention because the eardrum is located deep in the human body and is less susceptible to the effects of external temperature, so it can measure body temperature more accurately than other parts of the human body, such as the oral cavity and axilla. That is one of the reasons.
  • Non-contact type thermometers generally use a pyroelectric sensor or a thermopile sensor as a non-contact type temperature sensor for detecting infrared rays radiated from an object to be measured.
  • a pyroelectric sensor is a sensor that detects, as an output, a change in surface charge of a pyroelectric body due to a temperature change when absorbing infrared energy radiated from an object to be measured. Pyroelectric sensors change the temperature of the pyroelectric body. In order to produce an output only when the power is turned on, the incident infrared rays are chopped, intermittently cut off, and a continuous output is taken out.
  • a thermopile sensor is a sensor in which thermocouples are deposited by integrated circuit technology, and a continuous output for the temperature difference between the hot junction and the cold junction is obtained by a large number of directly connected thermocouples. is there.
  • thermopile sensor used in a conventional infrared thermometer will be described.
  • thermopile sensor As a conventional thermopile sensor, for example, there is a thermopile sensor disclosed in Japanese Patent Application Laid-Open No. H11-125855. Such a thermopile sensor is shown in FIGS. 19 to 21 and will be described below.
  • FIG. 19 is a cross-sectional view of the conventional thermopile sensor shown in the above-mentioned Japanese Patent Application Laid-Open No. 11-25055, after the thermopile sensor is mounted on a sensor stem, and FIG. 20 is a thermopile portion.
  • FIG. A pit portion 13 is formed at the center of the upper surface of the heat sink 12 having a large heat capacity made of a silicon substrate, and the upper surface of the pit portion 13 has a small heat capacity having electrical insulation and a small heat capacity.
  • thermocouple materials 15 and second thermocouple materials 16 are alternately wired on the heat sink 12 and the hot junction supporting film 14 from the upper surface of the heat sink 12 to the upper surface of the hot junction supporting film 14. .
  • the cold junction 17 and the hot junction support film 14 are joined to form the warm junction 18, respectively.
  • a thermopile 19 is formed by connecting thermocouples in series.
  • output terminals 20 are provided at both ends of the thermopile 19.
  • the upper surface of the hot junction 18 is covered with the infrared absorber 21. Therefore, when infrared rays are applied to the hot junction 18, a thermoelectromotive force is generated in the hot junction 18, and the output terminal 20 responds to the temperature difference between the hot junction 18 and the cold junction 17. The generated electromotive force is output.
  • An insulating thin film 32 is formed on the entire lower surface of the heat sink 12. On the surface of the insulating thin film 32, there is a thin film thin film 48 as shown in FIG.
  • the thin-film thermistor 48 has lead wires 49 at both ends. Since the heat sink 12 has a large heat capacity, the temperature change is small, and the temperature of the cold junction 17 is equal to the temperature of the heat sink 12. Therefore, the temperature of the cold junction 17 can be measured by measuring the temperature of the heat sink 12 with the thin film semiconductor 48.
  • a recess 50 is formed on the upper surface of the sensor stem 31 for mounting the thermopile sensor 6 so that a region facing the thin-film thermistor 48 becomes lower by one step, and wiring patterns (not shown) are formed on both sides thereof. It is formed and connected to the extraction electrode 49. .
  • thermopile 19 can be taken out to the sensor stem 31, and the wiring is connected to the output circuit from the above wiring pattern, and the thin film thermistor 48 is connected.
  • the output that is, the temperature of the cold junction 17 can be taken out.
  • the infrared radiation radiated from the measurement target is absorbed by the infrared absorber 21 formed on the hot junction 18 so that the temperature difference between the hot junction 18 and the cold junction 1 ⁇ Then, an electromotive force is generated between the output terminals 20 of the thermopile 19 for temperature measurement.
  • the temperature of the hot junction 18 is T
  • the temperature of the cold junction 17 is T.
  • the electromotive force V generated between the output terminals 20 of the thermopile 19 for temperature measurement is expressed by Stefan-Boltzmann's law.
  • V k (T 4 one T. 4) (k is a constant) is represented as (1).
  • the analog data of the electromotive force V is sent to a micro computer via an analog / digital converter (not shown), and based on the digital data, the fourth root operation is performed by the micro computer.
  • the temperature of the hot junction 18, that is, the relative temperature T of the measurement target can be known.
  • thermopile sensor As described above, in the conventional thermopile sensor, the temperature of the cold junction is measured using the temperature of the cold junction as the reference temperature of the relative temperature T, so that the temperature of the cold junction is accurate. It is important to detect In the infrared thermopile sensor disclosed in the above-mentioned Japanese Patent Application Laid-Open No. H11-125855, a thin-film sensor 488 is provided on the lower surface of the heat sink 12.
  • the heat sink 12 does not transmit infrared light even though the thermal junction 18 is irradiated with infrared rays
  • the heat sink 12 and the thermal junction supporting film 14 block the infrared rays
  • the heat sink 12 The infrared light is blocked by the insulating thin film 32 even when the light is transparent to infrared light. That is, no electromotive force caused by infrared light was generated at the thin-film thermistor 48, and the temperature of the cold junction could be accurately detected, thereby reducing errors in measurement.
  • thermopile 19 and the thin film layer are occupied by the same area as the thermopile 19. It is possible to dispose one and a half, so that the chip size of the thermopile sensor 6 can be reduced, and it is possible to measure the infrared thermometer by bringing the thermopile sensor 6 close to the measurement target. However, accurate measurement is possible. Further, since the chip size can be reduced, the number of chips obtained from one silicon wafer increases, and the cost of the thermopile sensor 6 and the infrared thermometer using the same can be reduced.
  • thermopile sensor or the thermopile sensor disclosed in Japanese Patent Application Laid-Open No. 11-255555 has the following problems.
  • the temperature T of the cold junction 17 becomes the reference temperature of the relative temperature T. Is in a state different from the ambient temperature or in a transient state that fluctuates until it reaches an equilibrium state with the ambient temperature.
  • the relative temperature T output from the thermopile sensor becomes an unstable state, and the temperature of the object to be measured is accurately and accurately measured.
  • Stable detection Becomes difficult. That is, the relative electromotive force generated in the thermopile 19 depends on the temperature of the infrared absorber 21 installed on the hot-junction support film 14 and the temperature of the hot-junction support film 14 itself, which is generated by the infrared absorption from the object to be measured.
  • the temperature difference between the hot junction temperature that depends on the temperature of the heat sink 12 and the cold junction temperature that depends on the temperature of the upper surface of the heat sink 12 generates an electromotive force. Otherwise, measurement errors are likely to occur.
  • thermopile sensor is a sensor that takes out the relative output with respect to the temperature difference between the hot junction and the cold junction as described above, but as the temperature difference between the hot junction and the cold junction increases, the output-one temperature decreases.
  • Relative output errors due to the so-called “temperature coefficient of sensitivity” in which the correlation is not linear are generally generated at a rate of 0.2 to 0.4% / ° C, so measurement errors are likely to occur.
  • thermopile is a sensor that outputs a relative electromotive force based on the temperature of the cold junction, but measures the temperature of the cold junction itself and adds this cold junction temperature to the output temperature of the thermopile. Without it, you cannot know the temperature of the target in the evening. However, the temperature of the cold junction depends on the temperature of the heat sink, and it may not be possible to accurately measure the temperature of the cold junction depending on the installation position of the thin-film sensor, which is a cold junction temperature measuring element.
  • a silicon substrate heat sink 12 having a thickness of several hundreds of microns is thermally coupled at its lower surface to the sensor stem 31 and at its upper surface. Is thermally coupled to the cold joint. Since the heat sink 12 itself is made of silicon, it does not have thermal conductivity as much as a metal material such as copper, and has a thickness of several hundred microns, so that the lower surface and the upper surface cannot be said to be heat equivalent. Has a temperature gradient. Therefore, the thin film thermostat 48 for measuring the temperature of the cold junction installed on the lower surface of the heat sink 12 can accurately measure the temperature of the cold junction installed on the upper surface of the heat sink 12. However, if the ambient temperature of the thermopile sensor suddenly changes, measurement errors are likely to occur.
  • This time difference fluctuates when the ambient temperature is stable, slowly changing, and rapidly changing, so that the relative output temperature of the thermopile sensor and the cold junction
  • a change in the ambient temperature caused a temperature difference in the measurement result.
  • thermometer which solves the above-mentioned problems in the prior art, improves the measurement accuracy at the time of temperature measurement, has a small number of parts, and is inexpensive and durable.
  • the infrared thermometer according to the first aspect of the present invention includes a thermopile sensor having a resistor having a self-controlling positive temperature coefficient characteristic therein.
  • the characteristic of the infrared thermometer is that the resistor with self-control type positive temperature coefficient characteristic has the property that the electrical resistance of the heating element increases as the temperature of the heating element rises due to energization. It has the feature that the current is suppressed and it is maintained at a constant temperature of the saturation self-stabilization temperature.
  • thermopile sensor automatically keeps it at the required temperature.
  • the cold junction of the thermopile sensor is pre-applied with a preset constant bias temperature, and changes in ambient temperature below the set temperature.
  • the resistor including the self-control type positive temperature coefficient characteristic adjusts itself to absorb the temperature change, and as a result, it is possible to detect an accurate temperature that is not affected by the ambient temperature.
  • a complicated feedback temperature control circuit including a temperature measuring element such as a thermometer for maintaining the temperature at a required temperature becomes unnecessary. Therefore, by incorporating such a thermopile sensor inside, it is possible to improve the measurement accuracy and to provide an inexpensive, durable, and highly safe infrared thermometer with a small number of parts.
  • thermometer according to the second claim of the present application is the infrared thermometer according to the first claim, wherein the thermopile sensor includes a resistor having a self-controlling positive temperature coefficient characteristic in a cold junction region.
  • thermopile sensor includes a resistor having a self-controlling positive temperature coefficient characteristic in a cold junction region.
  • An infrared thermometer characterized by being incorporated.
  • the thermal response speed of the resistor including the self-control type positive temperature coefficient characteristic is made as close as possible to the output response speed of the thermopile, and a highly reliable infrared thermometer with less measurement error is provided. can do.
  • the infrared thermometer according to the third aspect of the present invention is the infrared thermometer according to the second aspect of the present invention, wherein the antibody having the self-controlling positive temperature coefficient characteristic is thermally directly connected to the cold junction region.
  • the thermal response speed of the resistor including the self-controlling positive temperature coefficient characteristic can be made as close as possible to the output response speed of the thermopile to provide a highly reliable infrared thermometer with a small measurement error. Can be.
  • An infrared thermometer is the infrared thermometer according to the third aspect of the present invention, wherein a heating element system for heating the cold junction region and a temperature of the cold junction region are measured.
  • the cold junction and the cold junction temperature measuring element are forcibly subordinated by the heating element system and are previously raised to a certain bias temperature. Therefore, when the temperature difference between the hot junction region and the cold junction region is large, the output error due to the temperature coefficient J of the sensitivity can be suppressed. However, only the temperature rise of the hot junction due to the infrared energy from the first measurement was obtained, and the thermal response speed of the cold junction temperature measuring element system was extremely high, which was synchronized with the output response speed of the thermopile sensor. Is possible, and the measurement error is reduced.
  • An infrared thermometer is the infrared thermometer according to the fourth aspect, wherein at least one of the heating element system and the cold junction temperature measuring element system is cold.
  • An infrared thermometer having a structure directly thermally connected to a joint region.
  • the thermal response speed of the resistor including the self-controlling positive temperature coefficient characteristic can be made as close as possible to the output response speed of the thermopile to provide a highly reliable infrared thermometer with a small measurement error. Can be.
  • An infrared thermometer is the infrared thermometer according to the fourth aspect of the present invention, wherein the heating element system for heating the cold junction region and the temperature of the cold junction region are measured.
  • An infrared thermometer is the infrared thermometer according to the sixth aspect, wherein the thermistor temperature measuring element is an NTC (Negative Temperature Coefficient) resistor. It is an external thermometer.
  • NTC Negative Temperature Coefficient
  • thermometer according to an eighth aspect of the present invention is the infrared thermometer according to the sixth aspect of the present invention, wherein the thermometer element is a PTC. (Positive Temperature Coefficient)
  • PTC Physical Temperature Coefficient
  • the resistor including the self-controlling positive temperature coefficient characteristic of the heating element system of the infrared thermometer when the predetermined voltage is applied to heat the cold junction region, the resistance is saturated.
  • the cold junction of the thermopile sensor is pre-applied with a preset bias temperature of a predetermined temperature, and self-control of ambient temperature change below the set temperature
  • the resistor including the mold positive temperature coefficient characteristic adjusting the temperature itself and absorbing the temperature change it is possible to detect an accurate temperature independent of the ambient temperature.
  • an overheating accident of the thermopile can be prevented, and a highly safe infrared thermometer can be provided.
  • An infrared thermometer is the infrared thermometer according to the fourth aspect of the present invention, wherein a semiconductor heating element is disposed as the heating element system, and the self-control is performed as the cold junction temperature measuring element system.
  • An infrared thermometer comprising a resistor having a positive temperature coefficient characteristic.
  • a transistor, a diode, or the like is used as the above-mentioned semiconductor element, and when a predetermined voltage is applied thereto, heat is generated to heat the cold junction region. At this time, the cold junction region generated in response to the temperature of the cold junction region is measured.
  • the temperature of the cold junction can be detected by directly detecting the change in the self-resistance of the resistor including the self-control type positive temperature coefficient characteristic of the temperature element system and converting it to a temperature.
  • a structure is used in which a resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element system is thermally connected directly to the cold junction, and the output of the thermopile sensor and the thermal response speed are synchronized as much as possible. By doing so, a highly reliable infrared thermometer with a small measurement error can be provided.
  • the infrared thermometer according to the tenth aspect of the present invention is the infrared thermometer according to the fourth aspect of the present invention, wherein the resistor including the self-control type positive temperature coefficient characteristic is self-heated to reduce the cold junction area.
  • the infrared thermometer is characterized by being divided into a heating element system for heating and a non-heating cold junction temperature measuring element system that does not generate heat and measures the temperature of the cold junction region.
  • the resistor including the self-control type positive temperature coefficient characteristic of the heating element system described above when heating a cold junction region by applying a predetermined voltage, the resistor is heated stably at a constant temperature of the saturation self-stabilizing temperature. It is possible to prevent overheating of the thermopile without adding a separate temperature detector to the device.
  • a predetermined constant bias temperature is applied to the cold junction of the thermopile sensor in advance by the resistor that includes the self-controlling positive temperature coefficient characteristic of the heating element system.
  • the resistor including the self-controlling positive temperature coefficient characteristic adjusts to the ambient temperature change below the set temperature to absorb the temperature change by self-temperature adjustment.
  • the cold junction temperature is maintained at a constant temperature.
  • the temperature rise of the cold junction caused by this temperature rise reaches a thermal equilibrium state after a predetermined time, and a temperature difference occurs between the hot junction and the cold junction. Since the cold junction temperature is regulated at a constant bias temperature before measuring the evening gate temperature, it is easy to extract the rise in the cold junction temperature by infrared rays from the evening gate. By directly detecting the self-resistance change of the resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element system generated in response to the temperature of the junction area, the temperature is converted to a cold junction. Temperature can be accurately detected.
  • the temperature measuring element system has a structure in which a resistor including the self-control type positive temperature coefficient characteristic is thermally connected directly to the cold junction region.Furthermore, the measurement is performed under a constant bias temperature condition excluding the influence of the ambient temperature. By measuring the temperature of one gate, it is possible to synchronize the resistance of the above temperature measuring element system with the self-control type positive temperature coefficient characteristic as much as possible with the output of the thermopile sensor in terms of the thermal response speed. A highly reliable and safe infrared thermometer can be provided.
  • Sufficient heat dissipation characteristics When the temperature of the measurement target is measured, the cold junction is maintained at a constant bias temperature by a resistor including a self-controlling positive temperature coefficient characteristic, The rise in temperature of the junction due to infrared rays radiated from the gate can be completely absorbed by the heat sink and canceled out.
  • the temperature of the cold junction is constrained and treated as a specified value, and only the temperature change of the hot junction, that is, the output temperature of the thermopile, is detected, and the information processing device compares the output temperature value of the thermopile with the constant bias.
  • the specified temperature value By adding the specified temperature value, more accurate temperature detection becomes possible without detecting the cold junction temperature of the thermopile each time.
  • the infrared thermometer according to the eleventh aspect of the present invention is the infrared thermometer according to the fourth aspect, wherein the infrared thermometer according to the fourth aspect has a planar self-controlling positive temperature coefficient characteristic having an electrical insulating film on the surface of the cold junction region.
  • the thermal response speed of the resistor including the self-control type positive temperature coefficient characteristic is made as close as possible to the output response speed of the thermopile, and a highly reliable infrared thermometer with less measurement error is provided. can do.
  • the infrared thermometer according to claim 12 of the present application is the infrared thermometer according to claim 4, wherein the resistor including the self-control type positive temperature coefficient characteristic does not generate heat and has a cold junction.
  • the resistor including the self-control type positive temperature coefficient characteristic does not generate heat and has a cold junction.
  • the surface of the resistive element which is functionally divided into a system and has a planar shape including the self-regulating positive temperature coefficient characteristic of the heating element system and having the planar self-regulating positive temperature coefficient characteristic
  • This is an infrared thermometer characterized by horizontally arranging a comb-shaped analog thermostat having a large number of positive electrodes and negative electrodes arranged alternately in a horizontal direction.
  • the cold junction temperature is kept constant in order to continuously perform analog continuous correction for local temperature changes in the cold junction region and the cold junction temperature measuring element region due to a rapid change in the ambient temperature. Temperature measurement with high accuracy.
  • the infrared thermometer according to claim 13 of the present application is the infrared thermometer according to claim 4, wherein a resistor including a self-controlling positive temperature coefficient characteristic does not self-heat and has a cold junction.
  • a resistor which is functionally divided into a system and a self-controlling positive temperature coefficient characteristic of the heating element system has a planar shape having a predetermined thickness, and includes a planar positive electrode and a negative electrode.
  • An infrared thermometer characterized in that a positive electrode and a negative electrode of an analog thermostat are arranged so as to sandwich the front and back surfaces of a resistor including the above-mentioned planar self-control type positive temperature coefficient characteristic.
  • the infrared thermometer according to claim 14 of the present application is the infrared thermometer according to claim 4, wherein the thermopile output when the cold junction is unidirectionally and forcibly heated by the heating element system.
  • An infrared thermometer for detecting an element temperature.
  • the cold junction is forcibly and unilaterally heated by the heating element system, so that the conventional problems, that is, the problem relating to the delay in thermal response speed to changes in ambient temperature and the problem relating to the “temperature coefficient of sensitivity” are one. There is an effect that cutting does not occur.
  • the thermopile output voltage value is forced to pass through the zero point at a constant gradient. By controlling, the measurement time can be greatly reduced.
  • the cold junction area and the cold junction temperature measuring element are fixed in advance by the heating element. Heated to the bias temperature, the resistance change of the cold junction temperature measuring element is only the temperature rise in the hot junction area due to infrared energy from the measurement target, so its thermal response speed is extremely fast, and the cold junction It is possible to synchronize as much as possible to the temperature change in the local area.
  • the infrared thermometer according to the fifteenth aspect of the present invention is the infrared thermometer according to the fourth aspect, wherein the thermopile output when the cold junction is unidirectionally and forcibly heated by the heating element system.
  • a detector for detecting whether or not the voltage value of the phase is inverted with respect to a voltage threshold value which is set in advance and becomes a reference voltage value, and a converter for converting the presence or absence of the phase inversion into a 2-bit digital signal
  • an infrared thermometer that detects the temperature of the cold junction temperature measuring element in synchronization with the digital signal.
  • An infrared thermometer is the infrared thermometer according to the fourteenth aspect of the present invention, wherein the heating element system generates a constant temperature by generating heat and maintaining the temperature at a constant temperature.
  • An infrared thermometer comprising a variable temperature system that changes the temperature in the above temperature range.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by the variable temperature system.
  • the infrared thermometer according to the seventeenth aspect of the present invention is the infrared thermometer according to the fifteenth aspect of the present invention, wherein the heating element system generates a constant temperature by generating heat and maintaining the temperature at a constant temperature.
  • An infrared thermometer comprising a variable temperature system that changes the temperature in the above temperature range. With this configuration, it is possible to simultaneously reduce the measurement time and improve the measurement accuracy.
  • the infrared thermometer according to the eighteenth aspect of the present invention is the infrared thermometer according to the sixteenth aspect of the present invention, wherein the heating element system has two types of self-control type positive electrodes having different self-saturation stable temperatures.
  • This is an infrared thermometer characterized by disposing a resistor having a temperature coefficient characteristic.
  • the cold junction region and the cold junction region are formed by a resistor having a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is around the eardrum temperature (for example, 34 ° C).
  • a self-regulating positive temperature coefficient characteristic in which the temperature measuring element is pre-heated to a constant bias temperature (34 ° C), while the self-saturation stable temperature is higher than the eardrum temperature (for example, 50 ° C).
  • the temperature of the eardrum can be measured by variably heating the resistor within a certain temperature range (for example, 34 to 42 ° C).
  • the antibody containing the self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is near the eardrum temperature is maintained at a constant self-saturation stable temperature (34 ° C) regardless of the ambient temperature change.
  • self-saturation stable temperature 34 ° C
  • resistors with self-regulating positive temperature coefficient characteristics, whose self-stable saturation temperature is higher than the eardrum temperature are variably heated, but temperature control of variable heating becomes impossible even due to malfunction or failure.
  • self-saturated stable temperature Temperature (50 ° C) which prevents the infrared thermometer from overheating.
  • the infrared thermometer according to the nineteenth aspect of the present invention is the infrared thermometer according to the seventeenth aspect of the present invention, wherein the heating element system has two types of self-control type positive electrodes having different self-saturation stable temperatures.
  • This is an infrared thermometer characterized by disposing a resistor having a temperature coefficient characteristic.
  • the cold junction region and the cold junction region are formed by a resistor having a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is around the eardrum temperature (for example, 34 ° C).
  • a self-regulating positive temperature coefficient characteristic in which the temperature measuring element is pre-heated to a constant bias temperature (34 ° C), while the self-saturation stable temperature is higher than the eardrum temperature (for example, 50 ° C).
  • the temperature of the eardrum can be measured by variably heating the resistor within a certain temperature range (for example, 34 to 42 ° C).
  • the antibody containing the self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is near the eardrum temperature is maintained at a constant self-saturation stable temperature (34 ° C) regardless of the ambient temperature change. This prevents overheating accidents.
  • resistors with self-regulating positive temperature coefficient characteristics, whose self-stable saturation temperature is higher than the eardrum temperature are variable-heated. Even if it does, it will not be heated above the self-saturation stable temperature (50 ° C), preventing an overheating accident.
  • the infrared thermometer according to the twenty-first aspect of the present invention is the infrared thermometer according to the tenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements.
  • An infrared thermometer having a structure in which a plurality of systems including a plurality of resistors having the same resistance and having a self-controlling positive temperature coefficient characteristic are incorporated in the cold junction region.
  • the infrared thermometer according to the twenty-first aspect of the present invention is the infrared thermometer according to the tenth aspect, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements.
  • An infrared thermometer having a structure in which two or more pairs of resistors each having a self-control type positive temperature coefficient characteristic of a different resistance are incorporated in the cold junction region.
  • the infrared thermometer according to claim 22 of the present application is the infrared thermometer according to claim 10 of the present application, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements. It is characterized in that it has a structure in which a plurality of pairs of two pairs of resistors including self-controlling positive temperature coefficient characteristics of different resistances are combined in the cold junction region. It is an infrared thermometer.
  • the infrared thermometer according to claim 23 of the present application is the infrared thermometer according to claim 16 of the present application, wherein the infrared thermometer is thermally directly connected to the cold junction region, and is electrically insulated between the elements.
  • An infrared thermometer having a structure in which a plurality of systems composed of a plurality of resistors having the same resistance and a self-controlling positive temperature coefficient characteristic are incorporated in the cold junction region.
  • the infrared thermometer according to the twenty-fourth aspect of the present invention is the infrared thermometer according to the sixteenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and is electrically isolated between the elements.
  • An infrared thermometer having a structure in which a pair of two or more resistors including self-controlled positive temperature coefficient characteristics of different resistances are incorporated in the cold junction region. .
  • the infrared thermometer according to claim 25 of the present application is the infrared thermometer according to claim 16 of the present application, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements. It is characterized in that it has a structure in which a plurality of pairs of two pairs of resistors including self-controlling positive temperature coefficient characteristics of different resistances are combined in the cold junction region. It is an infrared thermometer.
  • the infrared thermometer according to claim 26 of the present application is the infrared thermometer according to claim 17 of the present application, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements.
  • An infrared thermometer having a structure in which a plurality of systems including a plurality of resistors having the same resistance and having a self-controlling positive temperature coefficient characteristic are incorporated in the cold junction region.
  • the infrared thermometer according to the twenty-seventh aspect of the present invention is the infrared thermometer according to the seventeenth aspect of the present invention, wherein the infrared thermometer is thermally directly connected to the cold junction region and is electrically insulated between the elements. Self-controlled positive temperature coefficient characteristics of different resistances An infrared thermometer having a structure in which two or more pairs of resistors are incorporated in the cold junction region.
  • the infrared thermometer according to claim 28 of the present application is the infrared thermometer according to claim 1 of the present application, wherein the infrared thermometer is thermally directly connected to the cold junction region and electrically insulated between the elements. It is characterized in that it has a structure in which a plurality of pairs of two pairs of resistors including self-controlling positive temperature coefficient characteristics of different resistances are combined in the cold junction region. It is an infrared thermometer.
  • the self-controlling positive temperature coefficient characteristic is obtained by arranging a plurality of resistors or a plurality of pairs including the self-controlling positive temperature coefficient characteristic.
  • the resistors included are heated for each system, enabling fine temperature control.
  • the resistors including the self-controlling positive temperature coefficient characteristic of the heating system and the cold junction temperature measuring element system are all safe from being overheated to a certain temperature or higher.
  • the infrared thermometer according to claim 29 of the present application is the infrared thermometer according to claim 4, wherein the resistor including the self-controlling positive temperature coefficient characteristic is formed on the substrate surface by vapor deposition. This is an infrared thermometer.
  • thermopile sensor is generally formed on a surface of a silicon pellet or a silicon chip or a silicon wafer by using a semiconductor lamination technique. Therefore, even when a resistor having a self-controlling positive temperature coefficient characteristic is formed, it is formed by using a vapor deposition technique which is one of the semiconductor lamination techniques, thereby increasing the degree of integration of the thermopile sensor of the present invention. In addition, it can be manufactured efficiently. In addition, it is easy to thermally directly connect the resistor including the self-control type positive temperature coefficient characteristic to the cold junction region of the thermopile.
  • the infrared thermometer according to claim 30 of the present application is the infrared thermometer according to claim 4, wherein the resistor including the self-controlling positive temperature coefficient characteristic is formed by paste baking on the substrate surface. Specially It is an infrared thermometer.
  • the infrared thermometer of the present invention can be efficiently manufactured by pasting and baking a resistor having a self-controlling positive temperature coefficient characteristic on the surface of a substrate such as a printed circuit board.
  • the infrared thermometer according to claim 31 of the present application is the infrared thermometer according to claim 4, wherein the resistor including the self-control type positive temperature coefficient characteristic is planarly printed on a substrate surface.
  • This is an infrared thermometer characterized in that:
  • the infrared thermometer of the present invention can be efficiently manufactured by printing a resistor having a self-controlling positive temperature coefficient characteristic on the surface of a substrate such as a printed circuit board.
  • the infrared thermometer according to claim 32 of the present application is the infrared thermometer according to claim 4, wherein the heating element region in which the heating element system is arranged and the cooling thermometer in which the cold junction temperature measuring element system is arranged.
  • the junction temperature measuring element area is arranged outside the cold junction with the hot junction as the center, on the substrate on which the cold junction is arranged, and arranged so as to be horizontally aligned with each other. This is a featured infrared thermometer.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 33 of the present application is the infrared thermometer according to claim 4 of the present application, wherein the heating element region in which the heating element system is arranged and the cooling thermometer in which the cold junction temperature measuring element system is arranged.
  • the junction temperature measuring element region is arranged outside the cold junction with the hot junction as the center, on the substrate on which the cold junction is arranged, and arranged so as to be vertically aligned with each other. This is a featured infrared thermometer.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 34 of the present application is the same as the infrared thermometer according to claim 4 of the present application.
  • the heating element region in which the heating element system is arranged and the cold junction temperature measuring element region in which the cold junction temperature measuring element system is arranged are located outside the cold junction around the hot junction.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied in the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 35 of the present application is the infrared thermometer according to claims 32 to 34 of the present application, wherein the heating element region in which the heating element system is arranged and a cold junction temperature measuring element.
  • the infrared thermometer is characterized in that the shape with the cold junction temperature measuring element region in which the system is arranged is a continuous square.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied in the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 36 of the present application is the infrared thermometer according to claims 32 to 34 of the present application, wherein the temperature of the heating element region in which the heating element system is arranged and the temperature of the cold junction are measured.
  • the infrared thermometer is characterized in that the shape of the cold junction temperature measuring element area in which the element system is arranged is a discontinuous polygon separated by a certain angle.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 37 of the present application is the infrared thermometer according to claims 32 to 3, wherein the heating element region in which the heating element system is arranged and a cold junction temperature measuring element system.
  • the infrared thermometer is characterized in that the shape with the cold junction temperature measuring element region in which is disposed is a continuous circle.
  • thermopile sensor of the conventional infrared thermometer Such a configuration (from this, the thermopile sensor of the conventional infrared thermometer)
  • the arrangement of the hot junction and the cold junction applied to the sensor can be applied to the infrared thermometer of the present invention.
  • An infrared thermometer is the infrared thermometer according to the thirty-second to thirty-fourth aspects, wherein: a heating element region in which the heating element system is disposed; This infrared thermometer is characterized in that the shape with the cold junction temperature measuring element region where the system is arranged is a discontinuous circle separated by a certain angle.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 39 of the present application is the infrared thermometer according to claim 4 of the present application, wherein the cold junction is built into the inside or surface of a silicon pellet or a silicon chip.
  • a resistor having a buried layer structure in the silicon pellet or silicon chip and having a self-controlling positive temperature coefficient characteristic is mixed with the cold junction ( It is an infrared thermometer having a hybrid structure.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • An infrared thermometer according to a 40th aspect of the present invention is the infrared thermometer according to the 4th aspect of the present invention, which has a structure in which a cold junction is incorporated in or on a silicon pellet or a silicon chip.
  • An infrared thermometer incorporating a molypile sensor characterized in that a thin film formed on the surface of the silicon pellet or silicon chip has a structure in which a resistive antibody having a self-controlling positive temperature coefficient characteristic is formed. It is an infrared thermometer. With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 41 of the present application is In the infrared thermometer according to (1), the self-controlling positive temperature coefficient characteristic is obtained in the infrared thermometer incorporating a thermopile having a structure in which the cold junction has a thick film formed on the surface of a chip substrate made of an insulator.
  • thermopile sensor of the conventional infrared thermometer With this configuration, the arrangement of the hot junction and the cold junction, which has been applied to the thermopile sensor of the conventional infrared thermometer, can be applied to the infrared thermometer of the present invention.
  • the infrared thermometer according to claim 42 of the present application is the infrared thermometer according to claims 1 to 28 of the present application, wherein the temperature is sequentially measured with respect to a plurality of black body furnaces having different temperatures as a reference temperature. It has a storage device for storing temperature measurement data at the time of measurement, and creates a unique temperature measurement data stored in the storage device as discontinuous plot temperature characteristics, and furthermore The plot characteristic processing is sequentially performed for each plot using a plurality of plot data before and after the plot, and a free curve temperature characteristic in which these plot plots are continuously connected is used as a unique temperature characteristic reference.
  • An infrared thermometer comprising: a recording medium on which a program stored in a storage device is recorded; and an information processing device for executing the program.
  • the temperature measurement method for an infrared thermometer is a thermopile having a heating element system for heating the cold junction region and a cold junction temperature measuring element system for measuring the temperature of the cold junction region.
  • a method of measuring the temperature of an infrared thermometer which detects infrared rays emitted from a measurement target by an infrared thermometer incorporating a sensor, and measures a temperature of the infrared thermometer.
  • a resistor having a self-controlling positive temperature coefficient characteristic is placed in at least one of the systems, and at least one of them is thermally connected directly to the cold junction area, thereby achieving the output of the thermopile.
  • a method for measuring the temperature of an infrared thermometer characterized by synchronizing the thermal response speed. is there.
  • Resistors with self-controlling positive temperature coefficient characteristics have the property that the electrical resistance of the heating element increases as the temperature of the heating element rises due to energization, so the current is suppressed as the temperature approaches the predetermined temperature. It has the characteristic of being maintained at a constant temperature of the saturated self-stabilizing temperature. Therefore, the thermopile sensor of the infrared thermometer has a resistor that includes a self-controlling positive temperature coefficient characteristic that maintains the thermopile sensor at a required temperature, so that the constant temperature set for the cold junction of the thermopile sensor is maintained.
  • the resistor with self-controlling positive temperature coefficient characteristic adjusts the temperature by itself and absorbs the temperature change, and as a result, it is not affected by the ambient temperature. Temperature can be detected.
  • thermopile without adding a safety device and a separate temperature detection device, an overheating accident of the thermopile can be prevented.
  • a complicated temperature control circuit including a temperature measuring element such as a thermistor for maintaining the temperature at a required temperature becomes unnecessary.
  • thermopile sensor since a constant bias temperature set for the cold junction of the thermopile sensor is preliminarily applied, the resistance change of the cold junction temperature measuring element system is caused by the temperature change due to infrared energy from the measurement target. Only the temperature rise at the junction, which makes the thermal response speed of the cold junction temperature measuring element system extremely fast, enables synchronization with the output response speed of the thermopile sensor, and reduces measurement errors.
  • thermopile the temperature of the cold junction of the thermopile can be easily maintained at a constant bias temperature without using a complicated temperature control circuit, and non-contact temperature measurement can be performed safely and with high accuracy by preventing overheating.
  • a temperature measuring method for an infrared thermometer according to claim 44 of the present application is the temperature measuring method for an infrared thermometer according to claim 43 of the present application, wherein: While maintaining the bias temperature, the thermopile output is detected and converted into a temperature value, the temperature of the cold junction area is measured each time by the cold junction temperature measuring element system, and the cold junction temperature is measured. Infrared thermometer characterized by adding the temperature value obtained from the thermopile output as the reference temperature to obtain the temperature of the measurement target Temperature measurement method.
  • thermopile sensor By adopting such a temperature measuring method, since a constant bias temperature set for the cold junction of the thermopile sensor is previously applied, the resistance change of the cold junction temperature measuring element system is measured by the measurement target.
  • the thermal response speed of the cold junction temperature measuring element system is extremely fast, and it is possible to synchronize with the output response speed of the thermopile sensor. The error is reduced.
  • thermopile the temperature of the cold junction of the thermopile can be easily maintained at a constant bias temperature without using a complicated temperature control circuit, and non-contact temperature measurement can be performed safely and with high accuracy by preventing overheating.
  • the method of measuring a temperature of an infrared thermometer according to claim 45 of the present application is the method of measuring temperature of an infrared thermometer according to claim 43 of the present application, wherein: The bias temperature is maintained and treated as a specified value, only the thermopile output is detected and converted to a temperature value. The constant bias temperature default value and the temperature value obtained from the thermopile output are compared with the predetermined value.
  • This is a method for measuring the temperature of an infrared thermometer, characterized in that the temperature of the measurement target is obtained by adding the following.
  • a resistor with a self-controlling positive temperature coefficient characteristic is used when measuring the temperature of the measurement target.
  • the cold junction can be maintained at a constant bias temperature, and the rise in the temperature of the junction due to infrared rays emitted from the measurement target can be completely absorbed by the heat sink to cancel out. Therefore, the temperature of the cold junction is constrained and treated as a specified value, and only the temperature change of the hot junction, that is, the output temperature of the thermopile is detected, and the output temperature value of the thermopile and the constant value are detected by the information processing device.
  • the bias temperature specified value By adding the bias temperature specified value, more accurate temperature detection can be performed without detecting the cold junction temperature of the thermopile each time.
  • the method for measuring the temperature of an infrared thermometer according to claim 46 of the present application is the same as the method for measuring temperature of an infrared thermometer according to claim 44 or 45 of the present application.
  • a non-heated cold junction temperature measuring element system that measures the temperature of the cold junction without self-heating the resistor including the self-control type positive temperature coefficient characteristic;
  • the function is divided into a cold junction temperature measuring element region in which the element system is arranged and a heating element system for heating the cold junction region, and the resistor is provided as a resistor including the self-controlling positive temperature coefficient characteristic of the heating element system.
  • a resistor having a planar self-control type positive temperature coefficient characteristic is disposed, and a positive electrode and a negative electrode alternate on the surface of the planar self-control positive temperature coefficient characteristic resistor.
  • a large number of comb-shaped analog thermostats acting in the horizontal direction are arranged at the same time, and the heating element heats the cold junction temperature measuring element region and the cold junction region so that the self-saturation stable temperature is maintained at a constant temperature. While maintaining the horizontal action of the comb A log Thermos Yu' up by the temperature measuring method of the infrared thermometer, characterized in that a partial temperature change of a thermal device region measuring the cold junction and a cold junction region analog continuous correction.
  • the method for measuring the temperature of an infrared thermometer according to claim 47 of the present application is the same as the method for measuring temperature of an infrared thermometer according to claim 44 or claim 45 of the present application.
  • a non-heated cold junction temperature measuring element system that measures the temperature of the cold junction without self-heating the resistor containing the characteristics, and a cold junction where the cold junction temperature measuring element system is arranged by self-heating.
  • the heating element system for heating the temperature measuring element region and the cold junction region is functionally divided, and the heating element system has a predetermined thickness as a resistor having a self-controllable positive temperature coefficient characteristic of the gun.
  • a resistor including a self-control type positive temperature coefficient characteristic is arranged, and a planar positive electrode and a negative electrode are arranged so as to sandwich the front and back surfaces of the planar self-control type positive temperature coefficient characteristic resistor. It is characterized by the placement of a vertical-acting analog thermostat A temperature measuring method of the infrared thermometer to.
  • the temperature measuring method for an infrared thermometer according to claim 48 of the present application is the method for measuring temperature of an infrared thermometer according to claim 43 of the present application, wherein the heating element system is heated to form a cold junction area.
  • the thermopile output voltage value is reduced functionally with respect to the heating element system heating time, and the zero point of the thermopile output voltage is forcibly passed.
  • the phase inversion between the positive and negative voltage values is detected, and the cold junction measurement is performed in synchronization with the phase inversion.
  • This is a method for measuring the temperature of an infrared thermometer, which is characterized by measuring the temperature of a measurement target by detecting the temperature of a cold junction region by a temperature element.
  • the cold junction is forcibly and unilaterally heated by the heating element system, so that the conventional problems, that is, the problem relating to the delay in thermal response speed to changes in ambient temperature and the problem relating to the “temperature coefficient of sensitivity” are one. There is an effect that cutting does not occur.
  • control is performed so that the zero point of the thermopile output voltage value is forcibly passed. Thereby, the measurement time can be significantly reduced.
  • the heating element heats the cold junction area and the cold junction temperature measuring element to a predetermined bias temperature in advance, and the resistance change of the cold junction temperature measuring element measures the temperature of the hot junction area due to infrared energy from the measurement target. Since only the rise is achieved, the thermal response speed becomes extremely fast, and can be synchronized as much as possible with the temperature change in the cold junction region.
  • the method for measuring the temperature of an infrared thermometer according to claim 49 of the present application is the method for measuring temperature of an infrared thermometer according to claim 43 of the present application, wherein the heating element system is heated to form a cold junction area.
  • the temperature of the heating element system is increased by one-sided and forced to reduce the thermo-modal output voltage value functionally with respect to the heating element system heating time.
  • the thermopile output voltage is forcibly passed with respect to the voltage threshold value, and the phase inversion of the thermopile output voltage with respect to the voltage threshold value is detected.
  • the cold junction is measured by the cold junction temperature measuring element.
  • This is a method for measuring the temperature of an infrared thermometer, characterized by measuring the temperature of a measurement target by detecting the temperature of a part area.
  • the voltage threshold is forcibly passed without being influenced by the ambient temperature change, and the measuring time can be greatly reduced.
  • the resistance change of the cold junction temperature measuring element can be measured from the moment of measurement by heating the cold junction area and the cold junction temperature measuring element to a constant bias temperature by the heating element in advance. Since only the temperature rise in the hot junction region due to the infrared energy is obtained, the thermal response speed becomes extremely fast, and it can be synchronized as much as possible with the temperature change in the cold junction region. That is, it is possible to simultaneously reduce the measurement time and improve the measurement accuracy.
  • the temperature measuring method for an infrared thermometer according to the fiftyth aspect of the present invention is the method for measuring a temperature of an infrared thermometer according to the fifty-eighth aspect of the present invention, wherein the temperature of the cold junction region is changed.
  • the phase detector determines whether or not the thermopile output voltage value of the thermopile output has inverted between the voltage value positive / negative regions, and generates a two-bit digital signal of “presence” or “absence”.
  • the temperature of the cold junction area is detected by detecting the temperature of the cold junction temperature sensor in synchronization with the digital signal. This is a method for measuring the temperature of an infrared thermometer, wherein the temperature is detected.
  • the method for measuring the temperature of an infrared thermometer according to claim 51 of the present application is the same as the method for measuring temperature of an infrared thermometer according to claim 49 of the present application, except that the temperature of the cold junction region is changed.
  • the phase detector determines whether or not the thermopile output voltage value has inverted the phase with respect to the voltage threshold value that becomes the reference voltage value, and determines whether the phase inversion is a two-bit digital signal of “present” or “absent”.
  • This is a temperature measuring method for an infrared thermometer, which detects a temperature of a cold junction region by detecting a temperature of a cold junction temperature measuring element in synchronization with the two-bit digital signal.
  • the voltage threshold is defined as a positive region of a thermopile output voltage value. This is a method for measuring the temperature of an infrared thermometer, wherein one is set for each negative region and a pair of voltage thresholds is set.
  • the temperature measuring method for an infrared thermometer according to claim 53 of the present application is the temperature measuring method for an infrared thermometer according to claim 49 of the present application, wherein the voltage threshold is defined as a positive region of a thermopile output voltage value.
  • This is a method for measuring the temperature of an infrared thermometer, comprising providing a plurality of pairs of voltage thresholds, one set for each negative region.
  • the number of measuring points can be further increased, so that the measuring accuracy is improved.
  • the temperature measuring method for an infrared thermometer according to claim 54 of the present application the temperature measuring method for an infrared thermometer according to claim 53 or 53 of the present application, This is a method for measuring the temperature of an infrared thermometer, wherein the absolute value of the voltage threshold in the positive region and the absolute value of the voltage threshold in the negative region are equal.
  • the average value of the measured value obtained in synchronization with the phase inversion with respect to the voltage threshold in the positive region and the measurement value obtained in synchronization with the phase inversion with respect to the voltage threshold in the negative region is calculated. It can be obtained as the temperature of the measurement one night. In other words, highly accurate measurement can be performed by simple arithmetic processing.
  • the temperature measuring method of the infrared thermometer according to the 55th claim of the present application is the temperature measuring method of the infrared thermometer according to the 48th or 49th claim of the present application.
  • the system is separated into a steady temperature system gun that generates heat and is maintained at a constant temperature, and a variable temperature system that varies the temperature within a certain temperature range.
  • a temperature measurement method for an infrared thermometer, wherein the temperature is maintained at a constant temperature, and the variable temperature system unilaterally and forcibly changes the temperature of a cold junction area after the start of temperature measurement.
  • the cold junction region and the cold junction temperature measuring element are preliminarily heated to a constant Piase temperature by a steady temperature system, and the measurement time can be reduced. Furthermore, since the resistance change of the cold junction temperature measuring element is only the temperature rise of the hot junction due to infrared energy from the measurement target, its thermal response speed is extremely fast, and the temperature of the cold junction region It can be synchronized as much as possible with changes.
  • the temperature measuring method of the infrared thermometer according to claim 56 of the present application is the temperature measuring method of infrared thermometer according to claim 44 of the present application, wherein the self-controlling positive temperature coefficient characteristic is used as the heating element system.
  • a temperature measuring method for an infrared thermometer comprising: disposing a resistor including the following, and disposing a thermometer element as the temperature measuring element system.
  • the method for measuring the temperature of the infrared thermometer according to claim 57 of the present application is as follows. 45. The method of measuring a temperature of an infrared thermometer according to claim 45, wherein a resistor having a self-controlling positive temperature coefficient characteristic is arranged as the heating element system, and a thermometer is used as the temperature measuring element system. The temperature measuring method for an infrared thermometer according to claim 45, wherein a temperature measuring element is provided.
  • the method of measuring a temperature of an infrared thermometer according to claim 58 of the present application is the method of measuring temperature of an infrared thermometer according to claim 48 of the present application, wherein the heat is generated.
  • a temperature measuring method for an infrared thermometer comprising disposing a resistor having characteristics and disposing a thermometer for measuring temperature as a temperature measuring element system.
  • the temperature measuring method for an infrared thermometer according to claim 59 of the present application is the temperature measuring method for infrared thermometer according to claim 49 of the present application, wherein the self-controlling positive temperature coefficient characteristic is used as the heating element system.
  • a temperature measuring method for an infrared thermometer comprising: disposing a resistor including the following, and disposing a thermometer element as the temperature measuring element system.
  • the infrared thermometer according to the 60th aspect of the present invention is the infrared thermometer according to the 58th to 61st aspects of the present invention.
  • NTC Negative Temperature Coefficient
  • the method for measuring the temperature of an infrared thermometer according to claim 61 of the present application is the method for measuring temperature of an infrared thermometer according to claims 58 to 61 of the present application, This is a method for measuring the temperature of an infrared thermometer, using a PTC (Positive Temperature Coefficient) resistor as an element.
  • PTC Positive Temperature Coefficient
  • thermocouple sensor is heated at a constant temperature of the saturation self-stabilization temperature, so that the constant junction bias temperature of the cold junction of the thermopile sensor is pre-applied.
  • the resistor including the self-control type positive temperature coefficient characteristic As a result, it is possible to detect an accurate temperature independent of the ambient temperature. Also, without adding a safety device and a separate temperature detection device, overheating of the thermopile can be prevented, and a highly safe thermopile sensor can be provided.
  • the method for measuring the temperature of an infrared thermometer according to claim 62 of the present application is the method for measuring temperature of an infrared thermometer according to claim 44, 45, 48 or 48 or 49 of the present application.
  • a semiconductor heating element is arranged as the heating element system, and a resistor having a self-controlling positive temperature coefficient characteristic is arranged as the cold junction temperature measuring element system.
  • a transistor, a diode, or the like is used as the semiconductor element.
  • heat is generated to heat the cold junction region.
  • the cold junction region generated in response to the temperature of the cold junction region is measured.
  • the temperature of the cold junction can be detected by directly detecting the change in the self-resistance of the resistor including the self-control type positive temperature coefficient characteristic of the temperature element system and converting it to a temperature.
  • a structure is used in which a resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element system is thermally connected directly to the cold junction, and the output of the thermopile sensor and the thermal response speed are synchronized as much as possible. By doing so, a highly reliable infrared thermometer with a small measurement error can be provided.
  • the method for measuring the temperature of an infrared thermometer according to claim 63 of the present application is the same as the method for measuring temperature of an infrared thermometer according to claim 44, 45 or 48 or 49 of the present application.
  • An infrared thermometer wherein a resistor having a self-controlling positive temperature coefficient characteristic is separated into a heating element system for generating heat by applying a predetermined voltage and a cold junction temperature measuring element system. This is the temperature measurement method.
  • the resistor including the self-control type positive temperature coefficient characteristic of the heating element system when a predetermined voltage is applied to heat the cold junction region, the cold junction region is heated at a constant temperature of the saturation self-stabilization temperature.
  • the cold junction of a single mopile sensor is in a state in which a predetermined constant bias temperature is applied in advance, and the ambient temperature change below the set temperature is detected by the resistor including the self-control type positive temperature coefficient characteristic. It adjusts its own temperature and absorbs changes in temperature. As a result, it is possible to detect an accurate temperature independent of the ambient temperature. In addition, an overheating accident of the infrared thermometer can be prevented without adding a safety device and a separate temperature detection device.
  • the resistor including the self-controlling positive temperature coefficient characteristic of the heating element system due to the resistor including the self-controlling positive temperature coefficient characteristic of the heating element system, the fixed junction temperature of the thermopile sensor was pre-applied to the preset fixed temperature, so the ambient temperature changed rapidly. Even in the case, the resistor including the self-control type positive temperature coefficient characteristic absorbs the temperature change by self-controlling the ambient temperature change below the set temperature, and as a result, the cold junction temperature is maintained at a constant temperature .
  • the infrared energy of the measurement target is converted into heat by the infrared absorber of the thermopile sensor, and the temperature of the hot junction is instantly measured.
  • the temperature of the cold junction is directly detected by detecting the self-resistance change of the resistor including the self-control positive temperature coefficient characteristic of the cold junction temperature measuring element system generated in response to the temperature of the cold junction, and converting it to temperature. Can be accurately detected.
  • the temperature measuring element system has a structure in which a resistor including the self-controlling positive temperature coefficient characteristic is thermally connected directly to the cold junction region.
  • a resistor including the self-controlling positive temperature coefficient characteristic is thermally connected directly to the cold junction region.
  • self-control is performed when measuring the temperature of the measurement target.
  • the cold junction is maintained at a constant pipe temperature by a resistor having a positive temperature coefficient characteristic, and the temperature of the junction is increased by infrared radiation radiated from the measurement gate.
  • the heat can be completely absorbed and offset. Therefore, the cold junction temperature is constrained and treated as a specified value, and only the temperature change of the hot junction, that is, the output temperature of the thermopile, is detected.
  • the cold junction is forcibly and unilaterally heated by a resistor including a self-controlling positive temperature coefficient characteristic of the heating element system, and the thermopile output voltage value is reduced as a function of the thermopile output voltage.
  • the thermopile output voltage value is reduced as a function of the thermopile output voltage.
  • the method for measuring the temperature of an infrared thermometer according to claim 64 of the present application is the same as the method for measuring temperature of an infrared thermometer according to claim 44, 45 or 48 or 49 of the present application.
  • a system consisting of a plurality of resistors electrically insulated between elements and including a self-controlling positive temperature coefficient characteristic with the same resistance characteristic is incorporated in multiple systems so as to be thermally connected directly to the cold junction region. This is a method for measuring the temperature of an infrared thermometer, in which different voltages are applied from the outside of the thermopile to generate different heating temperatures for each system in the cold junction area.
  • the method for measuring the temperature of an infrared thermometer according to claim 65 of the present application is the method for measuring temperature of an infrared thermometer according to claim 44, 45, 48 or 48 or 49 of the present application.
  • a plurality of systems consisting of resistors with self-controlling positive temperature coefficient characteristics with different resistance characteristics electrically insulated from each other are incorporated so as to be thermally connected directly to the cold junction area. Thermo This is a method for measuring the temperature of an infrared thermometer, wherein the same voltage is applied from the outside of the pile to generate a different heat generation temperature for each system in the cold junction.
  • the method for measuring the temperature of an infrared thermometer according to claim 66 of the present application is the method for measuring temperature of an infrared thermometer according to claim 44, 45, 48 or 48 or 49 of the present application.
  • a system is created by combining a plurality of pairs of two resistors that include self-controlling positive temperature coefficient characteristics with different resistance characteristics that are electrically insulated between elements, and these are thermally connected to the cold junction region.
  • a method for measuring the temperature of an infrared thermometer characterized by incorporating a plurality of systems so as to be directly connected, applying the same voltage to the outside of the thermopile, and generating a different heat generation temperature for each system at a cold junction. It is.
  • the resistors including the self-controlling positive temperature coefficient characteristic are heated for each system by arranging a plurality of resistors or a plurality of pairs including the self-controlling positive temperature coefficient characteristic, so that fine temperature control is performed. Is possible.
  • the resistors including the self-controlling positive temperature coefficient characteristic of the heating system and the temperature measuring element system are all safe because they are not overheated beyond a certain temperature.
  • the method for measuring the temperature of an infrared thermometer according to claim 67 of the present application is the same as the method for measuring temperature of infrared thermometer according to claim 48 or 49 of the present application, except that the heating element is different.
  • the cold junction region and the cold junction region are formed by a resistor having a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is around the eardrum temperature (for example, 34 ° C).
  • the temperature measuring element is heated in advance to a constant bias temperature (34 ° C), while the self-saturation stable temperature is higher than the eardrum temperature (for example, 50 ° C).
  • the temperature of the eardrum can be measured by variably heating the resistor within a certain temperature range (for example, 34 to 42 ° C).
  • the resistive antibody having a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is close to the eardrum temperature has a constant self-saturation stable temperature (34 ° C) regardless of the surrounding temperature change. This will prevent overheating accidents.
  • resistors with self-regulating positive temperature coefficient characteristics, whose self-stable saturation temperature is higher than the eardrum temperature are variable-heated. Even if the temperature rises, it will not be heated above the self-saturation stable temperature (50 ° C), preventing an overheating accident.
  • the method for measuring the temperature of an infrared thermometer according to claim 68 of the present application is the same as the method for measuring temperature of an infrared thermometer according to claim 44, 45, 48 or 48 or 49 of the present application.
  • a blackbody furnace with a plurality of different temperatures is installed as a reference temperature, and the infrared thermometer measures the temperature sequentially for the different temperatures of the blackbody furnace, and the unique temperature measurement result based on the individual difference of the infrared thermometer is obtained. Then, it is stored in a storage device provided inside the infrared thermometer, and thereafter, a specific program based on the black body furnace reference temperature data stored in the storage device is executed by a CPU program provided inside the infrared thermometer.
  • the temperature measurement data is created as discontinuous plot temperature characteristics, and the plot characteristic processing between plots is performed sequentially using the plot data before and after each plot between each plot.
  • Curve between plots The temperature characteristics of the free-curve that continuously connects the cows are used as the reference for the unique temperature characteristics of the infrared thermometer, and are stored in a storage device provided inside the infrared thermometer. This is a method for measuring the temperature of an infrared thermometer, which is characterized by automatically calibrating individual differences between the thermometers. With this configuration, it is possible to store in advance the inherent characteristics of the thermopile sensor and the infrared thermometer incorporating the same in the device, and to perform highly accurate measurement with little error.
  • FIG. 1 is a partially cutaway perspective view of an infrared thermometer according to a first embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of an infrared detector in the infrared thermometer according to the first embodiment of the present invention.
  • FIG. 3 is a top view and a sectional view of a main part of an internal structure in the thermopile sensor of the infrared thermometer according to the first embodiment of the present invention.
  • FIG. 4 is a top view of a thermopile portion in the thermopile sensor of the infrared thermometer according to the first embodiment of the present invention.
  • FIG. 5 is a top view of a main part of an internal structure in the thermopile sensor of the infrared thermometer according to the first embodiment of the present invention.
  • FIG. 6 is a graph showing characteristics of a resistor including a self-control type positive temperature coefficient characteristic used in the infrared thermometer according to the first embodiment of the present invention.
  • FIG. 7 is a block diagram showing an infrared thermometer according to the first embodiment of the present invention.
  • FIG. 8 is a top view and a sectional view of a main part of an internal structure in a thermopile sensor of an infrared thermometer according to a third embodiment of the present invention.
  • FIG. 9 is a top view and a sectional view of a main part of an internal structure of a thermopile sensor of an infrared thermometer according to a fourth embodiment of the present invention.
  • FIG. 10 is a top view and a sectional view of a main part of an internal structure in a thermopile sensor of an infrared thermometer according to a fifth embodiment of the present invention.
  • FIG. 11 is a schematic diagram showing the principle of temperature measurement in the infrared thermometer shown in FIG.
  • FIG. 12 is a top view and a sectional view of a main part of an internal structure in a thermopile sensor of an infrared thermometer according to a sixth embodiment of the present invention.
  • FIG. 13 is a block diagram showing an infrared thermometer according to a seventh embodiment of the present invention.
  • FIG. 14 is a flowchart of a temperature measuring method in the infrared thermometer shown in FIG.
  • FIG. 15 is a diagram showing a via of the infrared thermometer according to the seventh embodiment of the present invention.
  • 6 is a time-temperature curve showing a method of controlling the temperature of the thermopile sensor at the temperature of the thermopile.
  • FIG. 16 is a time-temperature curve showing a method of controlling the temperature of the thermopile sensor in the temperature measurement by the infrared thermometer according to the seventh embodiment of the present invention.
  • FIG. 17 is a top view and a sectional view of a main part of an internal structure of a thermopile sensor of an infrared thermometer according to an eighth embodiment of the present invention.
  • FIG. 18 is a top view and a sectional view of a main part of an internal structure in a thermopile sensor of an infrared thermometer according to a ninth embodiment of the present invention.
  • FIG. 19 is a sectional view of a thermopile sensor in a conventional infrared thermometer.
  • FIG. 20 is a top view of a thermopile sensor in a conventional infrared thermometer.
  • FIG. 21 is a top view showing the inner surface of a thermopile sensor in a conventional infrared thermometer.
  • FIG. 1 shows an ear thermometer as an infrared thermometer according to the first embodiment of the present invention.
  • the ear thermometer 1 is composed of a main body case 2, an infrared detecting section 3 and a temperature measuring circuit section 4 housed in the main body case 2.
  • the infrared ray detector 3 has a waveguide 5 and a thermopile sensor 6, the temperature measurement circuit 4 has a printed circuit board 7, a switch 8, and a display device 9.
  • Each element such as an information processing device required for temperature measurement is incorporated.
  • the infrared detecting section 3 and the temperature measuring circuit section 4 are incorporated and fixed in a plate-shaped hybrid board 10 as shown in FIG.
  • a waveguide 5, a thermopile sensor 6, and a printed board 7 are mounted on the hybrid board 10.
  • the nozzle 11 at the tip of the main body case 2 is formed so as to become thinner toward the tip so as not to penetrate deeply into the ear canal.
  • the infrared detecting section 3 is disposed at the tip of the main body case 2 and detects infrared rays incident on the hole provided at the tip of the nozzle 11.
  • the infrared detector 3 is radiated from the eardrum as shown in Figs. 1 and 2.
  • FIGS. 3 and 4 main parts of the internal structure of the thermopile sensor 6 are shown in FIGS. 3 and 4.
  • FIG. 3 main parts of the internal structure of the thermopile sensor 6 are shown in FIGS. 3 and 4.
  • a heat sink 12 made of silicon and having a pit portion 13 in the center and having a thickness of about several hundreds of microns has a heat insulating property on the upper and lower surfaces.
  • the joint support film 14 and the insulating thin film 32 are formed.
  • the hot-junction support film 14 is formed of silicon oxide, silicon nitride, or the like, and has a thickness of about several microns for the purpose of reducing heat capacity.
  • thermocouple materials 15 and second thermocouple materials 16 are alternately wired from the upper surface of the heat sink 12 to the upper surface of the hot junction supporting film 14.
  • the cold junction 17 and the hot junction support film 14 are formed on the upper surface to form the hot junction 18, respectively.
  • a thermopile 19 is formed by connecting the pairs in series. Output terminals 20 are provided at both ends of the thermopile 19.
  • the hot junction 18 has its upper surface covered with an infrared absorber 21.
  • the thermopile 19 may be formed in a shape as shown in FIG. 5, and the thermal junction 18 may not be covered with the infrared absorber.
  • the area where the cold junction 17 is formed is referred to as a cold junction area 22 and the area where the hot junction 18 is formed is referred to as a hot junction area 23.
  • This name is used according to As shown in FIG. 3, on the upper surface of the heat sink 12, a heating element 24 made of a resistor having a self-controlling positive temperature coefficient characteristic and a resistor also having a self-controlling positive temperature coefficient characteristic are formed.
  • the cold junction temperature measuring element 25 is arranged outside the four sides of the cold junction area 22 when viewed from the center of the diaphragm 26, and the cold junction temperature measuring element 25 and the heating element 24 are arranged in this order. I have.
  • the heating elements 24 and the cold junction temperature measuring elements 25 are electrically connected to each other, and electrodes 27 and 28 made of Au or the like are formed at both ends.
  • the region where the heating element 24 is formed is referred to as a heating element region 29, a region where the cold junction temperature measuring element 25 is formed, and a ⁇ cold junction temperature measuring element region 30, Hereinafter, this name will be used as necessary.
  • thermopile sensor 6 is fixed to the sensor stem 31 by die-bonding the thermopile sensor 6 to the sensor stem 31 as described above.
  • thermopile sensor 6 a thermal bonding support film 14 made of silicon oxide or silicon nitride and having a thickness of several microns is formed on both surfaces of a silicon pellet or a silicon chip or a silicon wafer to be a heat sink 12 by a CVD device or the like.
  • the surface of the heat sink 12 is made of a dissimilar metal (the first thermocouple material 15 and the second thermocouple material 16), and these are connected in series to form the cold junction 17 and the hot junction 18
  • thermopile having Examples of the combination of the first thermocouple material 15 and the second thermocouple material 16 forming the thermopile 19 include polysilicon and aluminum, or bismuth and antimony.
  • a resistor including a self-controlling positive temperature coefficient characteristic of the heating element 24 and the cold junction temperature measuring element 25 is formed on the surface of the heat sink 12 by vapor deposition. They can also be formed by a first bake. Alternatively, it may be formed by planar printing.
  • thermo-modal sensor 6 is completed.
  • the resistor including the self-control type positive temperature coefficient characteristic is the resistance-temperature characteristic graph in Fig. 6.
  • the heating element has the property that its electrical resistance increases as the temperature of the heating element rises due to energization.
  • resistors with self-regulating positive temperature characteristics have the property that the electrical resistance increases rapidly at a certain temperature (self-saturation stable temperature).
  • self-saturation stable temperature Generally, when a current flows through a resistor, heat is generated.
  • a resistor including a self-controlling positive temperature coefficient characteristic rapidly increases its electric resistance at a self-saturation stable temperature, so that the flowing current is suppressed.
  • the resistor including the self-control type positive temperature coefficient characteristic is maintained at a constant self-saturation stable temperature. That is, the resistor including the self-control type positive temperature coefficient characteristic is a resistor that can control the heating temperature by itself.
  • the conductive resin is a conductive resin made of conductive rubber, or a material obtained by appropriately mixing a semiconductor with such a conductive resin.
  • the resistor including the self-control type positive temperature coefficient characteristic of the heating element 24 generates heat by applying a predetermined constant voltage to the resistor, thereby maintaining the cold junction region 22 at a constant temperature of the self-saturation stable temperature. Things. Therefore, by using a resistor having a self-control type positive temperature coefficient characteristic having a desired self-saturation stable temperature, the cold junction region can be maintained at a desired temperature.
  • thermopile sensor By pre-biasing the cold junction region 22 to a constant temperature near the measurement target temperature in this way, the voltage output of the thermopile sensor decreases, and as the output increases, the output-temperature The relative output error of the thermopile sensor due to the so-called “temperature coefficient of sensitivity” where the correlation is not linear can be suppressed, and accurate temperature measurement can be performed. .
  • the resistor including the self-control type positive temperature coefficient characteristic is maintained at a constant temperature of the self-saturation stable temperature only by applying a predetermined constant voltage, so that complicated circuits and devices for temperature control are required. It is unnecessary and contributes to cost reduction.
  • the device configuration is simple, failure due to impact or the like is unlikely to occur, and the strength is excellent.
  • resistors with self-regulating positive temperature coefficient characteristics are naturally maintained at a constant temperature and are safe because they do not have to be overheated more than necessary.
  • the cold junction temperature measuring element region 30 and the cold junction region 22 are adjacent to each other and directly thermally connected.
  • the relative output of the thermopile sensor 6, that is, the temperature change of the thermal junction area 23 and the thermal equilibrium with this temperature change The temperature change in the cold junction region 22 is linked in a predetermined physical period. Therefore, the resistor including the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 25 can be synchronized as much as possible with the output of the thermopile sensor 6 in the thermal response speed.
  • thermopile sensor 6 caused by the infrared rays radiated from the measurement target and the temperature of the cold junction area 22 by the resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element 25
  • the deviation of the response speed from the temperature measurement is extremely small, the measurement error is small, and accurate measurement results can be obtained.
  • the resistors including the self-controlling positive temperature coefficient characteristics of the heating element 24 and the cold junction temperature measuring element 25 are arranged on the four sides of the cold junction region 22 as shown in FIG.
  • the arrangement is not limited to that shown above.
  • the shape may be a frame shape, or may be a concentric circle or a regular polygon, or a shape obtained by dividing such a circle or regular polygon at a certain angle according to the shape of the thermopile 19.
  • thermopile sensor 6 Next, how the temperature is measured by the thermopile sensor 6 will be described with reference to the block circuit diagram of FIG.
  • thermo pie The sensor 6 outputs a voltage corresponding to the temperature of the measurement target, that is, the difference between the temperature of the hot junction region 23 and the temperature of the cold junction region 22.
  • the amplifier 33 connected to the thermopile sensor 6 amplifies the minute voltage output from the thermopile sensor 6 to a predetermined magnitude.
  • the information processing device 34 connected to the amplifier 33 includes an A / D converter, and the information processing device 34 performs arithmetic processing based on the output signal from the amplifier 33, and cools this value. By adding to the temperature value of the junction area 22, the temperature value of the measurement target can be obtained.
  • the drive IC 35 applies a predetermined voltage to the resistor including the self-controlling positive temperature coefficient characteristic of the heating element 24 in accordance with the heating instruction signal from the information processing device 34. Then, the resistor including the self-controlling positive temperature coefficient characteristic of the heating element 24 is heated to a certain temperature of the self-saturation stable temperature near the temperature of the measurement target, and the cold junction temperature measuring element area 30 and Cold junction area 2 2 is set temperature T. Is maintained at a constant Pierce temperature.
  • the information processing device 34 When the measurement start command is transmitted to the information processing device 34, the information processing device 34 does not generate heat with respect to the resistor including the self-controlled positive temperature coefficient characteristic of the cold junction temperature measuring element 25.
  • the analog voltage obtained by the current flow is amplified by an amplifier 33, converted into a digital signal by an A / D converter built in the information processing device, and arithmetically processed based on the digital signal.
  • the obtained value is added to the temperature value of the cold junction area 2 2 that Detects the temperature of the object to be measured.
  • amplifier 33 the information processing device 34, and the drive IC 35 shown above and in FIG. 7 are arranged on the printed circuit board 7 shown in FIG.
  • the constant temperature bias temperature is set in the cold junction area 22 of the thermopile sensor 6 by the resistor including the self-controlling positive temperature coefficient characteristic of the heating element 24. Since the temperature is pre-applied, the ambient temperature change below the set temperature is self-controlled.
  • the resistor including the positive temperature coefficient characteristic adjusts its own temperature and absorbs the temperature change. Is kept. Therefore cold junction area
  • the self-resistance change of the resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element system generated in response to the temperature of 22 is not affected at all by the ambient temperature change. Therefore, the relative output signal of the thermopile sensor 6 and the signal processing from the cold junction temperature measuring element 25 can be processed in exactly the same manner as in the above-mentioned ambient temperature stable state. Temperature can be accurately detected.
  • the temperature control is performed on the heating element 24 by applying the resistor including the self-controlling positive temperature coefficient characteristic to both the heating element 24 and the cold junction temperature measuring element 25. No circuit is required.
  • the temperature of the cold junction region 22 is set by the resistor including the self-control type positive temperature coefficient characteristic of the heating element 24. It is not affected by changes in ambient temperature because it is maintained at a constant bias temperature. Furthermore, since the relative output of the thermopile sensor is compressed, the output error due to “temperature coefficient of sensitivity” is also suppressed, so that the measurement error can be reduced.
  • the resistor including the self-controlling positive temperature coefficient characteristic is safe because it is not overheated above the self-saturation stable temperature.
  • the temperature of the cold junction region 22 is stable at a constant temperature, so that the temperature of the measurement target can be accurately detected.
  • the resistor including the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 25 is thermally directly connected to the cold junction region 22. Furthermore, by measuring the temperature of the measurement target under a constant bias temperature condition excluding the influence of the ambient temperature, the relative output of the thermopile sensor 6, that is, the temperature change of the hot junction area 23 and the thermal equilibrium with this temperature change The temperature change of the cold junction region 22 is linked in a predetermined physical time. Therefore, the resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element 25 can be synchronized with the output of the thermopile sensor as much as possible in the thermal response speed. Therefore, accurate and quick temperature measurement becomes possible.
  • the heat sink 12 and the sensor stem 31 to which the heat sink 12 is thermally connected have sufficient heat radiation characteristics so that the self-control positive temperature coefficient
  • the cold junction region 22 is maintained at a constant bias temperature by a resistor including a heat sink, and the temperature rise of the junction due to infrared rays emitted from the measurement target is completely absorbed by the heat sink. Can be offset. Therefore, a constant bias temperature in the cold junction region 22 can be treated as a specified value. That is, by detecting only the thermopile output and converting it to a temperature, the temperature change in the hot junction region 23 is detected, and the information processing device 34 detects the thermopile output temperature value and the constant bias temperature regulation. By adding the values, it becomes possible to obtain the temperature of the measurement target one night. That is, it is possible to more accurately detect the temperature of the cold junction region 22 without detecting the temperature each time.
  • FIG. 8 is a top view and a sectional view of a thermopile sensor in an infrared thermometer according to a third embodiment of the present invention.
  • a heating element 24 made of a resistor having a self-controlling positive temperature coefficient characteristic and a cold junction made of a resistor also having a self-controlling positive temperature coefficient characteristic
  • the temperature measuring element 25 is disposed outside the four sides of the cold junction area 22 when viewed from the center of the diaphragm 26, in the order of the heating element 24 and the cold junction temperature measuring element 25.
  • the heating element region 29 is adjacent to the cold junction region 22 and has a structure directly thermally connected.
  • the resistor including the self-controlling positive temperature coefficient characteristic of the heating element 24 becomes a cold junction region. 2 2 It is possible to heat rapidly and reach a certain temperature (self-saturation stable temperature) in a short time. Therefore, the time required to start the measurement is reduced.
  • FIG. 9 is a top view and a sectional view of a thermopile sensor in an infrared thermometer according to a fourth embodiment of the present invention.
  • a heating element 24 made of a resistor having a self-controlling positive temperature coefficient characteristic, and a cold junction made of a resistor also having a self-controlling positive temperature coefficient characteristic
  • the temperature measuring elements 25 are arranged in a stacked manner.
  • thermopile sensor 6 The manufacturing process of the thermopile sensor 6 will be described. First, a thermal bonding support film 14 made of silicon oxide or silicon nitride with a thickness of several microns is formed on both surfaces of a silicon pellet or silicon chip or silicon wafer to be a heat sink 12 by a CVD device or the like. . Next, the self-controlling positive temperature of the cold junction temperature measuring element 25 is deposited on the thermal junction supporting film 14 on the upper surface side of the heat sink 12 by vapor deposition, paste baking, or sheet printing. A resistor having a coefficient characteristic is formed, and a thermal junction supporting film 14 made of silicon oxide or silicon nitride is formed thereon to a thickness of several microns again by a CVD apparatus or the like.
  • thermocouple material 15 and the second thermocouple material 16 are connected in series to form a heat sink having a cold junction 17 and a hot junction 18.
  • a resistor having a self-controlling positive temperature coefficient characteristic of the heating element 24 is formed on the surface of the heat sink 12 by a vapor deposition method, a paste baking method, or a sheet printing method.
  • the region below the thermopile 19 is partially removed by jet etching. Thereafter, the oxide film is removed by wet etching using hydrofluoric acid or the like, whereby the thermopile sensor 6 is completed.
  • the cold junction area 22 and the cold junction temperature measuring element area 30 are arranged adjacent to each other, and the heating element area 29 and the cold junction temperature measuring element area 30 are adjacent to each other. Are arranged to overlap in the vertical direction.
  • thermopile sensor of the infrared thermometer the heating element region 29 and the cold junction temperature measuring element region 30 are arranged so as to vertically overlap with each other.
  • the film 14 By interposing the film 14, it is electrically insulated and the temperature of the cold junction temperature measuring element region 30 is increased by the heating element.
  • the cold junction region 22 and the cold junction temperature measuring element region 30 are forcibly made dependent on the temperature of 24, they are raised in advance to a certain bias temperature. Therefore, the resistance change of the cold junction temperature measuring element 25 is only the temperature rise of the hot junction area 23 due to the infrared energy from the measurement sample, and the thermal response speed of the cold junction temperature measuring element 25 Becomes extremely fast, and can be synchronized with the output response speed of the thermopile sensor 6.
  • FIG. 10 is a top view and a sectional view of a thermopile sensor in an infrared thermometer according to a fifth embodiment of the present invention.
  • a resistor 36 including a planar self-controlling positive temperature coefficient characteristic as a heating element 24 is provided in both the cold junction region 22 and the cold junction temperature measuring element region 30. It is arranged on the upper surface of.
  • a comb-shaped analog solar panel 39 in which positive electrodes 37 and negative electrodes 38 are alternately arranged is formed.
  • thermopile sensor 6 Next, how the temperature is measured by the thermopile sensor 6 will be described with reference to FIG.
  • the procedure for measuring the temperature when the change in the ambient temperature is within a certain range, that is, in the steady state, is as described in the first embodiment of the present invention.
  • the comb-shaped analog thermos According to step 39, the temperature is corrected as follows. That is, the comb analog thermostat A current flows between the electrode 37 and the negative electrode 38 in accordance with a resistance change caused by a temperature difference between the electrodes.
  • the current between the positive electrode 37 and the negative electrode 38 in the part A due to the resistance change 0 is generated and heat is generated. Then, as the temperature approaches the set temperature, the current 40 decreases due to the resistance change, and becomes almost 0 when the temperature reaches the set temperature.
  • part B near part A, a slight temperature change occurs compared to part A, and a smaller current 41 is generated than in part A, generating heat, and the current 41 reaches the set temperature. At that point, it is almost zero. On the other hand, the current value is almost 0 in the part C maintained at the set temperature. .
  • the comb-shaped analog thermostat 39 generates a current corresponding to the temperature change between the mutual electrodes composed of the large number of positive electrodes 37 and the negative electrodes 38, thereby generating a current around the mutual electrodes. It compensates for the effects of temperature changes. Therefore, fine and precise temperature control is performed locally on both the cold junction area 22 and the cold junction temperature measuring element area 30 to assist the temperature maintenance by the heating element 24 and keep them at a constant temperature. By maintaining the temperature, the accuracy of the temperature measurement can be improved.
  • FIG. 12 is a top view and a cross-sectional view of a thermopile sensor in an infrared thermometer according to a sixth embodiment of the present invention.
  • the resistor 36 including the sheet-like self-control type positive temperature coefficient characteristic is connected to both the cold junction area 22 and the cold junction temperature measuring element area 30. It is arranged on the upper surface of.
  • an analog thermostat 44 composed of a planar positive electrode 42 disposed on the upper surface of the planar self-control type positive temperature coefficient characteristic heating element 36 and a planar negative electrode 43 disposed on the lower surface is provided. Is formed.
  • thermopile sensor 6 the analog thermos sunset 4 Numeral 4 has the same action as the comb analog thermostat unit 39 shown in FIG. That is, the temperature control is locally performed on both the cold junction region 22 and the cold junction temperature measuring element region 30 to assist in maintaining the temperature by the heating element 24, and these are always kept at a constant temperature. By maintaining the temperature, the accuracy of the temperature measurement can be improved.
  • the number of mutual electrodes whose number is limited in the comb-shaped analog thermostat 39 is innumerable on the surface, so that more local non-boundary and Temperature control without positional limitation can be performed.
  • thermopile sensor 6 outputs a voltage dependent on the amount of infrared radiation radiated from the measurement target and the temperature of the cold junction region 22. That is, the thermopile sensor 6 outputs a voltage corresponding to the temperature of the measurement target, that is, the difference between the temperature of the hot junction region 23 and the temperature of the cold junction region 22.
  • the output voltage value is the temperature.
  • thermopile sensor 6 If the temperature of the junction region 23 is higher than the temperature of the cold junction region 22, a positive voltage value is output, and the temperature of the hot junction region 23 is lower than the temperature of the cold junction region 22. In this case, it is output as a negative voltage value. When the temperature of the hot junction region 23 is equal to the temperature of the cold junction region 22, the output of the thermopile sensor 6 becomes zero.
  • the amplifier 33 connected to the thermopile sensor 6 amplifies the minute voltage output from the thermopile sensor 6 to a predetermined magnitude.
  • the phase detector 45 connected to the amplifier 33 determines whether or not the output voltage value of the thermopile sensor 6 amplified by the amplifier 33 has reversed between the voltage value positive / negative regions. It is sent to the information processing device 34 as a two-bit digital signal of “Yes” or “No”.
  • the resistor including the self-control type positive temperature coefficient characteristic of the cold junction temperature measuring element 25 is ⁇ This is a temperature measuring element for measuring the temperature of the junction area 22.It converts the change in self-resistance value into a voltage value, and this voltage value is the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element 22. It is amplified by an amplifier 33 connected to a resistor including.
  • the information processing device 34 includes an A / D converter, and the information processing device 34 outputs the output signal from the amplifier 33 in synchronization with the output signal of the phase inversion “yes” from the phase detector 45. The temperature is detected and arithmetic processing is performed to obtain the temperature value of the one-time measurement, which is displayed on the display device 9.
  • Figure 14 shows how the temperature of the measurement target is measured by the temperature measurement circuit described above, using the ear thermometer shown in Fig. 1 with such a thermopile sensor 6 as an example. This will be described in more detail with reference to the flowchart of FIG.
  • the procedure is roughly divided into a measurement preparation stage and a measurement stage. First, the measurement preparation stage will be described.
  • the switch 8 When the switch 8 is turned on, the information processing device 34 operates (1), the output of the cold junction temperature measuring element 25 is input via the amplifier 33, and the temperature is converted by the built-in AZD converter. To obtain the temperature of the cold junction area 22 (2).
  • the drive IC 35 is driven by the information processing device 34 to heat the heating element 24, and the cold junction area 22 and the cold junction temperature measuring element area 30 are set to a constant temperature bias temperature.
  • the bias temperature is appropriately determined, for example, when the thermopile sensor is applied to an ear thermometer and is set at 34 ° C., which is near the eardrum temperature.
  • the heating element 24 is feedback-controlled as shown in FIG.
  • the feedback control which is generally performed to maintain a constant temperature, is problematic in that it takes a long time for the temperature to become constant and that temperature changes are likely to occur due to temperature disturbances. Become.
  • the feedback control performed here is for the purpose of shortening the measurement time by applying the bias temperature to the last, ⁇ Pendular temperature control '' that forcibly fluctuates the temperature within the specified threshold value for the target constant temperature value. (See Figure 15). As described above, if the temperature of the cold junction region 22 and the temperature of the cold junction temperature measuring element region 30 are within the specified threshold region around the set bias temperature, the effect is sufficiently obtained. In other words, it is possible to shorten the time required to reach the bias temperature, and there is no particular problem even if there is a disturbance factor in the temperature unless the influence is very large.
  • the information processing device 34 determines whether or not the temperature of the cold junction region 22 is within the specified threshold region by the output of the cold junction temperature measuring element 25 in this manner. It is determined whether the temperature gradient is within the specified rate of change (that is, the temperature disturbance is within the allowable range) (3). If both the temperature and the rate of change are within the range, then Judgment is made as to whether such a rate of change within the regulation has continued for the prescribed time or more (whether or not a stable state with less disturbance has continued for a certain time or more) (4).
  • a change rate within a specified threshold value with respect to the temperature gradient of the “pendulum temperature control” is stored in advance as a change rate table. Then, the information processing device 34 reads this change rate table (5), compares it with the measured temperature change rate of the cold junction area 22 and finds a matching numerical value (6). The degree of influence due to the disturbance is determined (7), the degree of correction in the measured temperature value is then determined (8), and displayed on the display device 9 (9). As a display method at this time, for example, it is conceivable that the degree of the correction is set in advance as a rank, and the rank is displayed. At this stage, preparation for measurement is completed. It is desirable to indicate this at the same time in 9.
  • the process proceeds to the temperature measurement stage of the measurement target.
  • a thermometer is inserted into the ear canal (10)
  • the temperature is measured by infrared radiation emitted from the eardrum.
  • a notification sound such as a puza
  • the measurement start switch (13) Temperature measurement is started.
  • the output of the cold junction temperature measuring element 25 is input to the information processing unit 34 via the amplifier 33, and the temperature is converted by the built-in A / D converter to the cold junction area.
  • the drive IC 35 is driven by the information processing device 34, and the heating element 24 is rapidly heated, thereby forcibly heating the cold junction area 22 and the cold junction temperature measuring element area 30.
  • an ear-type thermometer heats at a bias temperature between 34 ° C and 42 ° C.
  • the thermopile output voltage value is reduced linearly with a constant gradient with respect to the heating element heating time, so that the zero point of the thermopile output voltage is forcibly passed.
  • Positive and negative voltage value area inversion is unilaterally and forcibly generated for the output.
  • the phase inversion between the voltage value positive / negative regions is detected by the phase detector 45, and is transmitted to the information processing device 34 as a two-bit digital signal of “presence” and “absence”.
  • the information processing device 34 determines from the 2-bit digital signal whether the phase inversion is “present” or “absent” (16).
  • a resistor including a self-controlling positive temperature coefficient characteristic is used as the heating element 24. It is used and maintained at a constant self-saturation stable temperature, and will not be overheated.
  • a resistor with a self-regulating positive temperature coefficient characteristic having a self-saturation stable temperature of 50 ° C prevents overheating accidents without using special safety devices. It is.
  • the output of the cold junction temperature measuring element 24 is input to the information processing device 34 through the amplifier 33 in synchronization with the signal of “presence” of the phase inversion, and is output by the built-in A / D converter. Temperature conversion is performed. Further, the temperature disturbance is corrected to obtain the temperature of the cold junction area 22 (17), and this temperature value is displayed on the display device 9 (18), and the temperature measurement ends.
  • the temperature of the cold junction region 22 obtained in this way is the temperature of the hot junction region 23, that is, the temperature of the measurement gate, and the positive and negative voltage values of the thermopile output voltage value.
  • the cold junction temperature measuring element region 30 and the heating element region 29 are arranged in this order outside the cold junction region 22 when viewed from the center of the diaphragm 26.
  • the order may be the heating element region 29 and the cold junction temperature measuring element region 30.
  • the bias temperature is applied to the cold junction region 22, the constant temperature is reduced in a shorter time. Can be reached.
  • thermopile sensor according to the present embodiment is shown in FIG.
  • This embodiment is characterized in that the heating element 24 is further system-separated into a steady-temperature system heating element 46 and a variable-temperature system heating element 47, as shown in FIG.
  • the cold junction region 22 is maintained at a constant bias temperature by the system heating element 46, and the variable temperature system heating element 47 keeps the temperature of the cold junction region 22 after the temperature measurement starts. And forcibly change it. That is, heating to the bias temperature in the measurement preparation stage and heating in the measurement stage were performed by the single heating element 24 in the first embodiment.
  • the forced heating of the cold junction region 22 is shared between the steady-state temperature system heating element 46 and the variable temperature system heating element 47.
  • Each of these heating elements is composed of a resistor having a self-control type positive temperature coefficient characteristic, and as a resistor having a self-controlling positive temperature coefficient characteristic of the steady temperature type heating element 46, the self-saturation stable temperature is a variable temperature type heating element.
  • a resistor whose temperature is lower than that of the resistor containing the self-control type positive temperature coefficient characteristic of 47.
  • a variable temperature system heating element 4 is used as the steady temperature system heating element 46 using a self-regulating positive temperature coefficient characteristic having a self-saturation stable temperature of 34 ° C of the bias temperature.
  • a resistor including a self-control type positive temperature coefficient characteristic having a self-saturation stable temperature of 50 ° C. is used.
  • the steady temperature system heating element 46 is heated to 34 ° C by applying a specified voltage value in the measurement preparation stage, and then is kept at a constant temperature without being overheated further. Is maintained. Furthermore, even when there is a disturbance factor such as a sudden change in the ambient temperature, the temperature is adjusted and maintained at this temperature. Therefore, the feed pack control as performed in the seventh embodiment is not required, and the apparatus configuration can be simplified, the cost can be reduced, and the strength can be improved.
  • variable heating system heating element 47 is maintained at a bias temperature of 34 ° C. following the heating by the steady temperature system heating element 46 without applying a voltage in the measurement preparation stage. Then, voltage is applied for the first time in the measurement stage, and it is forcibly heated between 34 ° C and 42 ° C.
  • the information processing device 34 determines whether or not the phase inversion is “present” or “absent” based on the 2-bit digital signal, and stops the heating of the variable system heating element 47 when it is determined to be “present”. Send a signal to At this time, if the heating stop signal is not sent for some reason such as a malfunction of the device, the voltage is continuously applied to the variable system heating element 47. However, also in this case, the variable system heating element 47
  • the resistor including the control-type positive temperature coefficient characteristic is maintained at a constant temperature of 50 ° C, which is the self-saturation stable temperature, does not rise any more, and overheats without using a special safety device. Accidents are prevented.
  • the order may be the heating element area 29 and the cold junction temperature measuring element area 30.
  • FIG. 18 shows a thermopile sensor section of the infrared thermometer according to the present embodiment.
  • a cold junction temperature measuring element 25 As shown in FIG. 18, a cold junction temperature measuring element 25, a steady temperature system heating element 46, and a variable temperature system heating element 47 are stacked and arranged.
  • thermopile sensor 6 The manufacturing process of the thermopile sensor 6 will be described. First, a thermal bonding portion support film 14 made of silicon oxide or silicon nitride and having a thickness of several microns is formed on both surfaces of a silicon pellet or silicon chip to be a heat sink 12 or a silicon wafer by a CVD apparatus or the like. Next, the self-controlling positive temperature of the cold junction temperature measuring element 25 is deposited on the hot junction support film 14 on the upper surface side of the heat sink 12 by vapor deposition, paste baking, or sheet printing. A resistor having a coefficient characteristic is formed, and a thermal junction supporting film 14 made of silicon oxide or silicon nitride is formed thereon to a thickness of several microns again by a CVD apparatus or the like.
  • thermocouple material 15 and the second thermocouple material 16 are formed on the surface of the heat sink 12 and connected in series to form the cold junction 17 and the hot junction 18.
  • the formed thermopile 19 is formed.
  • a resistor having a self-controlling positive temperature coefficient characteristic of the variable temperature system heating element 47 is formed on the surface of the heat sink 12 by a vapor deposition method, a paste baking method, a sheet printing method, or the like.
  • a thermal bonding support film 14 made of silicon oxide or silicon nitride is formed again to a thickness of several microns by a CVD apparatus or the like.
  • a self-regulating positive temperature control A resistor having numerical characteristics is formed by a vapor deposition method, a paste baking method, a sheet printing method, or the like.
  • the region below the thermopile 19 is removed by jet etching. I do.
  • a thermopile sensor 6 is formed.
  • the cold junction temperature measuring element 25, the steady temperature system heating element 46, and the variable temperature system heating element 47 are stacked and arranged. By interposing the film 14, they are electrically insulated from each other, and exhibit exactly the same operation as the eighth embodiment when measuring the temperature. Moreover, it has the feature that the device configuration is compact.
  • thermopile output voltage is forcibly passed through the zero point of the thermopile output voltage so that the output value of the thermopile decreases linearly with a constant gradient with respect to the heating time of the heating element.
  • the phase inversion between the positive and negative voltage values is detected by a phase detector and sent to the information processing device 34 as a two-bit digital signal of "in” and "no j".
  • thermopile output voltage value serving as a reference voltage value
  • the thermopile output voltage value is forced to decrease temporarily with a constant gradient to this voltage threshold value.
  • the phase detector 45 detects the phase inversion of the thermopile output voltage value with respect to the voltage threshold, and sends it to the information processing device 34 as a two-bit digital signal of “presence” and “absence”.
  • This voltage threshold value is set near the zero point in the positive or negative region of the thermopile output voltage, but is preferably provided in both the positive and negative regions to form a pair of voltage thresholds. The reason is described below.
  • the phase detector 45 sends the information to the information processing device 34 as a 2-bit digital signal of “presence” and “absence” of the phase inversion with respect to the voltage threshold.
  • the information processing device 34 outputs the cold junction temperature measuring element 25 in synchronization with the phase inversion “Yes” signal.
  • the force is input via the amplifier 33, and the temperature is converted by the built-in AZD converter to obtain the temperature of the cold junction region 22.
  • the relational expression between the temperature corresponding to the zero point of the thermopile output voltage value and the temperature corresponding to the voltage threshold is input in advance to the storage device built in the information processing device 34, and this relational expression is obtained.
  • the temperature of the hot junction region 23 that is, the temperature of the measurement target
  • the voltage threshold is provided in both the positive and negative regions of the thermopile voltage output value, the above operation can be performed twice, and therefore, measurement with less error and high accuracy can be performed.
  • the average value of the temperature obtained for each of the voltage thresholds in the positive region and the negative region is obtained.
  • the temperature of the hot junction region 23, that is, the temperature of the measurement target is obtained. Therefore, it is preferable because the arithmetic processing can be simplified and the measurement efficiency can be increased.
  • the infrared thermometer according to the present embodiment is obtained by adding a self-calibration function that configures a measurement error caused by a temperature characteristic unique to the device to the infrared thermometer described in the first to tenth embodiments. .
  • the temperature of a blackbody furnace with multiple reference temperatures is measured for each device.
  • the temperature ranges from 34 ° C, which is the aforementioned bias temperature, to 42.
  • Several reference temperatures are determined in the range of about C, and the temperature is measured sequentially for the blackbody furnace at each of these temperatures.
  • the results of the temperature measurement are stored in a storage device built in the information processing device 34, and the reference temperature is graduated. Furthermore, this information processing device 3 4 A program for interpolating between the data with a curve for each of the data graduated as described above is built in, and the program is converted into a continuous curve by this program and stored in the storage device. The product is shipped when the processing up to is completed. That is, at this stage, a device such as an ear thermometer incorporating a thermopile sensor or a thermopile sensor has a built-in reference continuous curve corresponding to each temperature characteristic.
  • the information processing device 34 When the temperature is measured using a device such as an ear thermometer incorporating the thermopile sensor or the thermopile sensor, the information processing device 34 directly obtains the temperature value of the measurement target based on the above standard continuous curve. By doing so, the inherent error between the devices is self-calibrated, and high-precision measurement can be performed.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

L'invention concerne un thermomètre à infrarouges ainsi qu'un procédé de mesure de la température au moyen d'un thermomètre à infrarouges. Une résistance présentant un coefficient de température positive à autorégulation est disposée dans un système de chauffage servant à chauffer la soudure froide d'un capteur à thermopile ou dans un système de mesure de la température destiné à mesurer la température de cette soudure froide. Ladite soudure froide est maintenue à une température donnée ou à une température de polarisation particulière avant le début de la mesure de la température. Pour la mesure de la température, la température de la soudure froide est amenée à s'élever de façon que la tension de sortie de la thermopile puisse baisser linéairement au-dessous du point de sortie zéro ou d'un seuil prédéterminé. La température est mesurée au moment où la tension de sortie de la thermopile atteint zéro ou ce seuil prédéterminé.
PCT/JP2000/002597 2000-04-20 2000-04-20 Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges WO2001088495A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2000238408A AU2000238408A1 (en) 2000-04-20 2000-04-20 Infrared thermometer and method of measuring temperature with infrared thermometer
PCT/JP2000/002597 WO2001088495A1 (fr) 2000-04-20 2000-04-20 Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/002597 WO2001088495A1 (fr) 2000-04-20 2000-04-20 Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges

Publications (1)

Publication Number Publication Date
WO2001088495A1 true WO2001088495A1 (fr) 2001-11-22

Family

ID=11735946

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2000/002597 WO2001088495A1 (fr) 2000-04-20 2000-04-20 Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges

Country Status (2)

Country Link
AU (1) AU2000238408A1 (fr)
WO (1) WO2001088495A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102485166A (zh) * 2010-12-03 2012-06-06 优盛医学科技股份有限公司 红外线温度计测量温度的方法
CN103256989A (zh) * 2013-05-07 2013-08-21 江苏物联网研究发展中心 提高封闭膜式热电堆探测器导热稳定性的结构
CN103398784A (zh) * 2013-07-26 2013-11-20 江苏物联网研究发展中心 红外热电堆温度传感器的自校正电路

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127368U (fr) * 1977-03-18 1978-10-09
JPS63106129U (fr) * 1986-12-26 1988-07-08
US4900162A (en) * 1989-03-20 1990-02-13 Ivac Corporation Infrared thermometry system and method
US4904090A (en) * 1986-11-29 1990-02-27 Thorn Emi Plc Temperature sensing arrangement
JPH03189526A (ja) * 1989-12-20 1991-08-19 Tokin Corp サーモパイル
JPH03273689A (ja) * 1990-03-23 1991-12-04 Tokin Corp 高感度サーモパイル
JPH0417301A (ja) * 1990-05-10 1992-01-22 Mitsui Toatsu Chem Inc 正特性薄膜サーミスタ
JPH0590646A (ja) * 1991-03-05 1993-04-09 Citizen Watch Co Ltd サーモパイル型赤外線センサおよびその製造方法
JPH07181082A (ja) * 1993-12-22 1995-07-18 Nissan Motor Co Ltd 赤外線検出装置
JPH09292283A (ja) * 1996-04-26 1997-11-11 Nippon Avionics Co Ltd 赤外線熱画像装置の温度テーブル自動作成装置
JPH10115556A (ja) * 1996-10-11 1998-05-06 Mitsubishi Electric Corp 赤外線検出器
JPH11123180A (ja) * 1997-10-21 1999-05-11 Terumo Corp 赤外線体温計
JPH11258055A (ja) * 1998-03-12 1999-09-24 Omron Corp サーモパイル型温度センサ

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127368U (fr) * 1977-03-18 1978-10-09
US4904090A (en) * 1986-11-29 1990-02-27 Thorn Emi Plc Temperature sensing arrangement
JPS63106129U (fr) * 1986-12-26 1988-07-08
US4900162A (en) * 1989-03-20 1990-02-13 Ivac Corporation Infrared thermometry system and method
JPH03189526A (ja) * 1989-12-20 1991-08-19 Tokin Corp サーモパイル
JPH03273689A (ja) * 1990-03-23 1991-12-04 Tokin Corp 高感度サーモパイル
JPH0417301A (ja) * 1990-05-10 1992-01-22 Mitsui Toatsu Chem Inc 正特性薄膜サーミスタ
JPH0590646A (ja) * 1991-03-05 1993-04-09 Citizen Watch Co Ltd サーモパイル型赤外線センサおよびその製造方法
JPH07181082A (ja) * 1993-12-22 1995-07-18 Nissan Motor Co Ltd 赤外線検出装置
JPH09292283A (ja) * 1996-04-26 1997-11-11 Nippon Avionics Co Ltd 赤外線熱画像装置の温度テーブル自動作成装置
JPH10115556A (ja) * 1996-10-11 1998-05-06 Mitsubishi Electric Corp 赤外線検出器
JPH11123180A (ja) * 1997-10-21 1999-05-11 Terumo Corp 赤外線体温計
JPH11258055A (ja) * 1998-03-12 1999-09-24 Omron Corp サーモパイル型温度センサ

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102485166A (zh) * 2010-12-03 2012-06-06 优盛医学科技股份有限公司 红外线温度计测量温度的方法
CN103256989A (zh) * 2013-05-07 2013-08-21 江苏物联网研究发展中心 提高封闭膜式热电堆探测器导热稳定性的结构
CN103398784A (zh) * 2013-07-26 2013-11-20 江苏物联网研究发展中心 红外热电堆温度传感器的自校正电路

Also Published As

Publication number Publication date
AU2000238408A1 (en) 2001-11-26

Similar Documents

Publication Publication Date Title
US5054936A (en) Sensor for active thermal detection
US6316770B1 (en) Thermal detector with bolometric effect amplification
JP4619499B2 (ja) 温度の安定化可能な赤外線センサ及びこの形式のセンサを有する赤外線温度計
US6300554B1 (en) Method of fabricating thermoelectric sensor and thermoelectric sensor device
KR20000076051A (ko) 서모파일 센서 및 서모파일 센서가 구비된 방사 온도계
JP2002071452A (ja) 熱型赤外線検出器
JPS6129648B2 (fr)
CN105745518A (zh) 内部温度传感器
EP1333504A3 (fr) Capteur infrarouge pression intégré monolithique
US20070227575A1 (en) Thermopile element and infrared sensor by using the same
WO2001088495A1 (fr) Thermometre a infrarouges et procede de mesure de la temperature au moyen de ce thermometre a infrarouges
JPH0666639A (ja) 赤外線温度計
JPS60133329A (ja) 非接触式温度検出装置
JP4580562B2 (ja) 非接触型温度センサーおよびそれを用いた赤外線体温計
WO2001050102A1 (fr) Capteur a thermopile et procede de mesure de temperature par rayons infrarouges
JP3303786B2 (ja) ボロメータ型赤外線センサ
CN210487079U (zh) 红外温度传感器及包括其的探头、红外体温计
JP4490580B2 (ja) 赤外線センサー
JP3874077B2 (ja) ヒステリシスを有するボロメ−タ型赤外線検出器及びその駆動方法
JP2002156283A (ja) サーモパイル型赤外線センサ
JP2003156395A (ja) 赤外線温度センサー
WO2001061295A1 (fr) Capteur a thermopile et procede destine a mesurer la temperature au moyen d'un rayonnement infrarouge
WO2002055975A1 (fr) Detecteur de phase, procede d'etablissement de valeur de reference de detecteur de phase, thermometre a infrarouge, et procede de mesure de temperature sur ce thermometre
US5378873A (en) Electrothermal conversion elements, apparatus and methods for use in comparing, calibrating and measuring electrical signals
JP3338456B2 (ja) 放射温度計及び放射温度計の温度測定方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: JP

122 Ep: pct application non-entry in european phase