WO2001061295A1 - Capteur a thermopile et procede destine a mesurer la temperature au moyen d'un rayonnement infrarouge - Google Patents

Capteur a thermopile et procede destine a mesurer la temperature au moyen d'un rayonnement infrarouge Download PDF

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Publication number
WO2001061295A1
WO2001061295A1 PCT/JP2000/000893 JP0000893W WO0161295A1 WO 2001061295 A1 WO2001061295 A1 WO 2001061295A1 JP 0000893 W JP0000893 W JP 0000893W WO 0161295 A1 WO0161295 A1 WO 0161295A1
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Prior art keywords
temperature
cold junction
thermopile
self
heating element
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PCT/JP2000/000893
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English (en)
Japanese (ja)
Inventor
Kazuhito Sakano
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Kazuhito Sakano
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Application filed by Kazuhito Sakano filed Critical Kazuhito Sakano
Priority to AU2000225727A priority Critical patent/AU2000225727A1/en
Priority to PCT/JP2000/000893 priority patent/WO2001061295A1/fr
Publication of WO2001061295A1 publication Critical patent/WO2001061295A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
    • G01J5/14—Electrical features thereof
    • G01J5/16—Arrangements with respect to the cold junction; Compensating influence of ambient temperature or other variables
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered

Definitions

  • the present invention relates to a thermopile sensor and a temperature measurement method using infrared rays, and more particularly, to a thermopile sensor configured by arranging a large number of thermocouple elements on a substrate, and sensing infrared rays radiated from a measurement target, and The present invention relates to a method for measuring temperature by infrared light using the thermopile sensor.
  • thermometer has been used to detect infrared rays emitted from a measurement target and measure the temperature of the measurement target in a non-contact manner.
  • thermometers emit more from the eardrum and surrounding tissues than contact-type thermometers such as the sublingual thermometer that measures the temperature in the oral cavity and the axillary thermometer that measures the temperature in the axilla for hygiene reasons.
  • contact-type thermometers such as the sublingual thermometer that measures the temperature in the oral cavity and the axillary thermometer that measures the temperature in the axilla for hygiene reasons.
  • the demand for non-contact ear thermometers that measure body temperature by detecting infrared radiation is increasing.
  • Ear-type thermometers are also attracting attention because the eardrum is located deep in the human body and is less affected by the temperature of the outside world, so it can measure body temperature more accurately than other parts of the human body such as the oral cavity and axilla. That is one of the reasons.
  • Non-contact type thermometers generally use a pyroelectric sensor or a thermopile sensor as a non-contact type temperature sensor for detecting infrared rays radiated from an object to be measured.
  • a pyroelectric sensor is a sensor that detects, as an output, a change in surface charge of a pyroelectric body due to a temperature change when absorbing infrared energy radiated from an object to be measured. Impatience In order to output only when the temperature of the pyroelectric body changes, the electric sensor continually intercepts and cuts off the incident infrared rays by shoving.
  • Thermopile sensors deposit thermocouples using integrated circuit technology and use a number of directly connected thermocouples to provide a continuous output for the temperature difference between the hot and cold junctions. This is the sensor to be taken out.
  • thermopile sensor As a conventional thermopile sensor, for example, there is a thermopile sensor shown in FIG. As shown in Fig. 11, a heat sink 2 having a thickness of several hundred micron is provided with a pit 3 at the center, and a heat sink 2 having a few micron on the upper surface. The thickness of the hot junction supporting film 4 is formed on the lower surface, and the insulating thin film 12 is formed on the lower surface. As shown in FIG. 11, a large number of first thermocouple materials 5 and second thermocouple materials 6 are alternately wired by vapor deposition or the like from the upper surface of the heat sink 2 to the upper surface of the hot junction supporting film 4.
  • thermopile 9 is formed by connecting thermocouples in series. Further, output terminals 10 are provided at both ends of the thermopile 9. Note that the upper surface of the thermal bonding section 8 is covered with an infrared absorber (not shown).
  • thermopile sensor 1 is fixed to the sensor stem 13 by die bonding the thermopile sensor 1 to the sensor stem 13 as described above.
  • thermopile sensor The principle of the temperature measurement in the above-mentioned thermopile sensor is explained below based on the block diagram of Fig. 12 with the example of the radiation thermometer shown in Japanese Patent Application Laid-Open No. 3-27131. I do.
  • the infrared radiation emitted from the measurement target is absorbed by an infrared absorber (not shown) formed on the hot junction 8 so that a temperature difference between the hot junction 8 and the cold junction 7 occurs. Then, an electromotive force is generated between the output terminals 10 of the thermopile 9 for temperature measurement.
  • the amplifier 14 connected to the output terminal 10 amplifies the weak output of the thermopile sensor 1 to a predetermined magnitude.
  • the differential power amplifier 15 connected to the amplifier 14 is an amplifier
  • thermometer 17 and the thermometer 16 are housed together with the thermopile sensor 1 in the sensor stem 13.
  • Information processor 18 is a thermistor 17
  • the temperature of the thermopile sensor 1, that is, the temperature of the cold junction 7, is calculated from the resistance of the thermopile sensor 1 and displayed by the display means 19.
  • V output of the mono Mopairusensa 1 the temperature T of the measurement target (temperature junction 8), mono Mopairusensa 1 the temperature of the (cold junction 7)
  • T Q the output V of the thermopile sensor 1 Is, according to Stefan-Boltzmann's law
  • V k (T-T 0) where k is a constant (1)
  • thermopile sensor 1 the temperature of the thermopile sensor 1 that is, the temperature of the cold junction 7 is controlled by the output of the thermopile sensor 1.
  • the temperature T of the object to be measured can be known by detecting the temperature at the thermistor 17.
  • the radiation thermometer disclosed in Japanese Unexamined Patent Application Publication No. 3-273112 is not affected by the sensitivity of the thermopile sensor or the amplification circuit, and thus has the advantage that measurement errors can be reduced.
  • the radiation thermometer disclosed in Japanese Patent Application Laid-Open No. 3-27331 uses a control means for performing feedback control so that the output V of the thermopile sensor 1 becomes zero.
  • Such feedback control is a closed loop control, that is, a method of adjusting the temperature of the cold junction 7 by heating the cold junction 7 via the heater 16 with the amount of heat corresponding to the output of the thermo sensor 1. It is.
  • the heating amount 1 hour graph in Fig. 13 the heating amount of the heater 16 changes every moment and the output V of the thermopile sensor 1 decreases toward 0 according to the feedback result. It has the characteristic.
  • thermopile sensor 1 As the output of the thermopile sensor 1 is close to 0, the amount of heating becomes small as shown in the heating amount-one-hour graph in FIG. 13, so the output of the thermopile sensor 1 is The time ti required to achieve the state where V is 0 is long.
  • thermopile sensor inserted into the ear canal when measuring the temperature of the eardrum
  • the amount of infrared light incident on the thermopile sensor 1 changes during temperature measurement due to disturbance factors such as changes in the insertion angle of 1 and the influence of the ear canal temperature
  • the output of the thermopile sensor 1 also changes. . Therefore, the amount of heating to the cold junction 7 is successively adjusted by the differential power amplifier 15, and the frequency of the fine adjustment increases particularly when the output of the thermopile sensor 1 is near 0, so that the measurement time ti is long. Time.
  • the feedback control circuit usually has a propagation delay coefficient.
  • a transmission delay coefficient cannot be treated as a fixed constant when the heating state changes every moment by the feedback control. Therefore, it is impossible to set a coefficient for compensating the propagation delay, and it is necessary to control the output change of the above-mentioned thermopile sensor 1 while maintaining a large propagation delay coefficient. Therefore, the heating adjustment cannot follow the output change of the thermopile sensor 1. Since the transmission delay causes a mismatch between the feedback command value and the control result, the heating adjustment of the cold junction 7 is frequently performed and is finely controlled.
  • thermopile sensor 1 Such fine adjustment causes a pulsation phenomenon in the vicinity of 0 of the output of the thermopile sensor 1 in combination with a change in the amount of infrared rays incident on the thermopile sensor 1.
  • t becomes a long time as shown in the output-time graph of FIG.
  • thermopile sensor and an infrared temperature measuring method which can solve the above-mentioned problems in the prior art, improve the measurement accuracy, and shorten the measurement time. .
  • the invention according to the first aspect of the present invention which is provided to solve the above-described problem, is to directly connect a heating element to a cold junction region of a thermopile by thermally connecting the heating element. Temperature measuring elements in the cold junction area so as to be structurally synchronized with the temperature change in the cold junction area, and the heating element is heated to generate a certain amount of heat for the cold junction area. The temperature of the thermopile output voltage value is reduced linearly and linearly with a constant gradient to the heating element heating time, thereby forcibly passing the zero point of the thermopile output voltage.
  • the phase inversion between the positive and negative voltage values is detected, and the cold junction measurement is performed in synchronization with the phase inversion detection.
  • the temperature of the cold junction area is controlled by the temperature element. This is a method of measuring temperature by infrared light, characterized by measuring the temperature of a measurement target by detecting.
  • the temperature of the cold junction area is not feedback-controlled so that the thermopile output voltage coincides with the zero point as in the prior art, but the thermopile output voltage value Since the zero point is controlled so as to pass through at a constant gradient, the measurement time can be greatly reduced.
  • the heating element heats the cold junction area and the cold junction temperature measuring element to a predetermined bias temperature in advance, and the resistance change of the cold junction temperature measuring element is determined by the infrared energy from the measurement target. Since only the temperature rise in the region is obtained, the thermal response speed becomes extremely fast, and it can be synchronized as much as possible with the temperature change in the cold junction region.
  • the feedback control performed in the conventional thermopile sensor relates to the temperature measurement itself at the time of the measurement, whereas the feedback control referred to here merely controls the bias temperature. It is for applying. Therefore, it does not require strict control like the feedback control performed in the conventional thermopile sensor. At least, if the heating is performed within a certain temperature range centered on the bias temperature, the effect can be obtained, and the above-described problem does not occur.
  • the invention according to the second claim of the present application provides a cold junction region of a thermopile such that the heating element is thermally directly coupled to the cold junction region, and the heating element is thermally directly coupled to the cold junction region.
  • Each of the cold junction temperature measuring elements is incorporated so as to synchronize with the temperature change in the joint area, and the heating element is heated to apply a constant amount of heat unilaterally and forcibly to the cold junction area.
  • the thermopile output voltage value is reduced linearly with a constant gradient with respect to the heating element heating time, and the thermopile output voltage value is set with respect to a voltage threshold value that is set in advance and becomes a reference voltage value.
  • the temperature of the measurement target A temperature measuring method according to the infrared radiation, wherein the measuring child.
  • the zero point of the thermopile output voltage value is forcibly passed at a constant gradient without being affected by changes in the surrounding temperature, and the measurement time is greatly reduced.
  • the resistance of the cold junction temperature measuring element changes from the measurement target by heating the cold junction area and the cold junction temperature measuring element to a constant bias temperature by the heating element in advance. Since only the temperature rise in the hot junction region due to the infrared energy is obtained, the thermal response speed becomes extremely fast, and the temperature can be synchronized as much as possible with the temperature change in the cold junction region. That is, it is possible to simultaneously shorten the measurement time and improve the measurement accuracy.
  • the invention according to claim 3 of the present application is the temperature measurement method using infrared light according to claim 1, wherein the output voltage value of the thermopile when the temperature of the cold junction region is changed is a voltage value.
  • the phase detector determines whether or not the phase has been reversed between the positive and negative regions, and generates a 2-bit digital signal indicating whether the phase has been inverted (“Yes” or “No”), and synchronized with the 2-bit digital signal.
  • This is a temperature measurement method using infrared rays, which directly detects the temperature of the cold junction area by detecting the temperature of the junction temperature measuring element.
  • the output voltage of the thermopile when the temperature of the cold junction region is changed is changed to the reference voltage.
  • the phase detector determines whether or not phase inversion has occurred with respect to the voltage threshold, which is a value, and generates a two-bit digital signal indicating whether phase inversion is present or absent.
  • This is a temperature measurement method using infrared rays, wherein the temperature of the cold junction area is directly detected by detecting the temperature of the cold junction temperature measuring element in synchronization. With this configuration, it is possible to simultaneously reduce the measurement time and improve the measurement accuracy.
  • the voltage threshold is set to one for each of a positive region and a negative region of a thermopile output voltage value, This is a temperature measurement method using infrared rays, which is characterized by forming a pair of voltage thresholds.
  • thermopile output voltage value With respect to the voltage threshold.
  • the temperature of the measurement target is obtained by performing arithmetic processing during the period.
  • the voltage threshold is set to one for each of a positive region and a negative region of a thermopile output voltage value.
  • This is a temperature measurement method using infrared rays, characterized by providing a plurality of pairs of voltage thresholds.
  • the number of measuring points can be further increased, so that the measuring accuracy is improved.
  • a seventh aspect of the present invention in the temperature measurement method using infrared light according to the fifth aspect of the present invention, in the voltage threshold pair, a pair of a positive region voltage threshold and a negative region voltage threshold This is a temperature measurement method using infrared light, characterized by making the absolute value of the temperature equal.
  • the measured value obtained in synchronization with the phase inversion with respect to the voltage threshold in the positive region and the measurement value obtained in synchronization with the phase inversion with respect to the voltage threshold in the negative region can be obtained as the temperature of the measurement target.
  • high-precision measurement can be performed by simple arithmetic processing.
  • a positive region voltage threshold and a negative region voltage threshold are paired. This is a temperature measurement method using infrared rays, characterized by making the absolute value of the temperature equal.
  • the measured value obtained in synchronization with the phase inversion with respect to the voltage threshold in the positive region and the phase inversion with respect to the voltage threshold in the negative region are compared.
  • the average value of the measured values obtained in synchronization with each other is obtained, and the temperature of the measurement target can be measured with higher accuracy based on the plurality of values.
  • the heating element is configured to generate heat and maintain a constant temperature;
  • the system is separated into a variable temperature system that makes the temperature variable in the temperature range, the cold junction region is maintained at a constant temperature before the temperature measurement is started by the steady temperature system, and the variable temperature system is started after the temperature measurement starts.
  • the cold junction area and the cold junction temperature measuring element can be heated in advance to a constant bias temperature by a steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the temperature rise of the hot junction due to infrared energy from the measurement target, so that its thermal response speed becomes extremely fast, and the temperature of the cold junction region Synchronize as much as possible with change.
  • the measurement time can be greatly reduced.
  • the heating element in the temperature measurement method using infrared rays according to the second aspect of the present invention, it is preferable that the heating element generates heat and is maintained at a constant temperature. And a variable temperature system that makes the temperature variable in the temperature range Separately, the cold junction region is maintained at a constant temperature in advance before the start of temperature measurement by the steady temperature system, and the variable temperature system unilaterally and forcibly changes the temperature of the cold junction region after the start of temperature measurement. This is a method of measuring temperature using infrared rays, which is characterized by this.
  • the cold junction area and the cold junction temperature measuring element can be heated in advance to a constant bias temperature by a steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so that its thermal response speed is extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 11 of the present application is directed to the temperature measurement method using infrared light according to claim 1 of the present application, wherein at least one of the heating element and the cold junction temperature measuring element is a self-control type.
  • This is a temperature measurement method using infrared rays, characterized by using a resistor having a positive temperature coefficient characteristic.
  • a resistor with a self-controlling positive temperature coefficient characteristic has the property that the resistance of the heating element increases as the temperature of the heating element rises due to energization. It has the feature of being maintained at a constant temperature. Therefore, an overheating accident can be prevented without adding a safety device.
  • the invention according to claim 12 of the present application is directed to the temperature measurement method using infrared light according to claim 2 of the present application, wherein at least one of the heating element and the cold junction temperature measuring element is a self-control type.
  • This is a temperature measurement method using infrared rays, characterized by using a resistor having a positive temperature coefficient characteristic.
  • a plurality of elements having the same resistance characteristic electrically insulated between elements are provided.
  • a plurality of systems composed of a resistor having a self-controlling positive temperature coefficient characteristic are produced, and these are incorporated as heating elements so as to be thermally directly connected to the cold junction region, respectively.
  • This is a temperature measurement method using infrared rays, which generates different heat generation temperatures for each system by applying different voltages from outside the mopile. With this configuration, it is possible to separate these systems into a steady temperature system and a variable temperature system.
  • the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, since the resistance change of the cold junction temperature measuring element is only the temperature rise of the hot junction area due to the infrared energy from the measurement target, the thermal response speed becomes extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 14 of the present application is the temperature measurement method using infrared light according to claim 10 of the present application, wherein the self-controlling positive temperature coefficient characteristic of a plurality of identical resistance characteristics electrically insulated between elements is provided.
  • a plurality of systems composed of a resistor including the following are manufactured, and these are each formed as a heat generating element so as to be thermally connected directly to the cold junction region, and different voltages are respectively applied from outside the thermopile.
  • This is a temperature measurement method using infrared rays, which generates a different heat generation temperature for each system by applying the temperature.
  • these systems can be separated into a steady temperature system and a variable temperature system. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so that its thermal response speed is extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change. On the other hand, the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region using a variable temperature system.
  • the invention according to claim 15 of the present application is the temperature measuring method using infrared light according to claim 9 of the present application, wherein the self-control positive temperature coefficient characteristic of different resistance characteristics electrically insulated between elements is provided.
  • a plurality of systems consisting of two resistors are manufactured, and these are incorporated as heat-generating elements so as to be thermally connected directly to the cold junction region, and the same voltage is applied from outside the thermopile.
  • This is a method of measuring temperature by infrared rays, characterized in that different heating temperatures are generated for each system by applying a temperature.
  • the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so that its thermal response speed is extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region using a variable temperature system.
  • the invention according to claim 16 of the present application is directed to the temperature measurement method using infrared light according to claim 10 of the present application, wherein the method includes a self-controlling positive temperature coefficient characteristic having different resistance characteristics electrically insulated between elements.
  • a plurality of systems composed of two resistors are manufactured, and these are used as heat-generating elements, each of which is thermally connected directly to the cold junction region, and the same voltage is applied from outside the thermopile.
  • This is a temperature measurement method using infrared rays, which generates a different heat generation temperature for each system by applying voltage. With this configuration, it is possible to separate these systems into a steady temperature system and a variable temperature system.
  • the cold-join The temperature measurement element can be heated to a constant bias temperature by heating the temperature measuring element of the region and the cold junction to shorten the measurement time. Furthermore, the resistance change of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so its thermal response speed is extremely fast, and the temperature change in the cold junction area Can be synchronized as much as possible.
  • the measurement time can be significantly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 17 of the present application is the temperature measurement method using infrared light according to claim 9 of the present application, wherein the self-control type positive temperature coefficient characteristic of different resistance characteristics electrically insulated between elements is provided.
  • a plurality of systems composed of a plurality of pairs each including two resistors are manufactured, and these are used as heat generating elements and incorporated so as to be thermally directly connected to the cold junction region, respectively.
  • This is a method of measuring temperature using infrared rays, which generates different heat generation temperatures for each system by applying the same voltage from the same.
  • these systems can be separated into a steady temperature system and a variable temperature system. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so that its thermal response speed is extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 18 of the present application is directed to the temperature measurement method using infrared light according to claim 10 of the present application, wherein the self-insulating element having different resistance characteristics electrically insulated between elements is provided.
  • a plurality of systems formed by combining a plurality of pairs of two resistors including a control-type positive temperature coefficient characteristic are produced, and these are used as heating elements, and each of them is thermally directly connected to the cold junction region.
  • This is a temperature measurement method using infrared rays, characterized in that different heat generation temperatures are generated for each system by incorporating the same and applying the same voltage from outside the thermopile.
  • these systems can be separated into a steady temperature system and a variable temperature system. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the resistance change of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so its thermal response speed is extremely fast, and the temperature change in the cold junction area Can be synchronized as much as possible.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 19 of the present application is the temperature measurement method using infrared light according to claim 9 of the present application, wherein the heating element system has two types of self-control type positive electrodes having different self-saturation stable temperatures.
  • Use a resistor with a temperature coefficient characteristic and apply a specified current to a resistor with a self-stable positive temperature coefficient characteristic, which has a lower self-saturation stability temperature, at a constant self-saturation stable temperature.
  • Temperature measurement using infrared light characterized in that the resistor with a self-regulating positive temperature coefficient characteristic with a higher self-saturation stable temperature is changed to an arbitrary temperature below the self-saturation stable temperature. It is a method.
  • the self-saturation stable temperature is around the eardrum temperature (for example, 34 ° C).
  • the temperature of the area and the cold junction temperature measuring element must be set in advance to a constant bias temperature (3
  • the self-saturation stable temperature is higher than the eardrum temperature (for example, 50 ° C).
  • the temperature of the eardrum can be measured by performing variable heating at 42 ° C).
  • the resistor with a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is close to the eardrum temperature is maintained at a constant self-saturation stable temperature (34 V) regardless of ambient temperature changes. Therefore, an overheating accident of the thermopile sensor is prevented.
  • the self-saturation stable temperature is higher than the eardrum temperature.
  • the resistor with the self-regulating positive temperature coefficient characteristic is variable-heated, but even if it malfunctions or fails, the variable-heating temperature control is impossible. Even if the temperature rises, it will not be heated above the self-saturation stable temperature (50 ° C), thereby preventing the thermopile sensor from overheating.
  • the saturation self-stabilizing temperature is maintained at a constant temperature, so that the number of parts can be reduced, which leads to cost reduction and product reduction. Contributes to improvement in strength.
  • a resistor having coefficient characteristics is used, and a predetermined current is applied to the resistor having a self-regulating positive temperature coefficient characteristic, which has a lower self-saturation stable temperature, to stabilize at a constant self-saturation stable temperature.
  • a resistor having a self-stable positive temperature coefficient characteristic with a higher self-saturation stable temperature is a temperature measurement method using infrared rays, which is characterized by changing the temperature to an arbitrary temperature below the self-saturation stable temperature.
  • the one with a low self-saturation stable temperature is stabilized at a constant temperature of a bias temperature as a steady temperature system, and the one with a high self-saturation temperature is a variable temperature system as a variable temperature system.
  • overheating of the thermopile sensor can be prevented without adding a safety device.
  • the self-saturation stable temperature is maintained at a constant temperature without feedback control, so that the number of parts can be reduced, which leads to cost reduction and product reduction. Contributes to improvement in strength.
  • the invention according to claim 21 of the present application is directed to the temperature measurement method using infrared light according to any one of claims 1 to 20, wherein a blackbody furnace having a plurality of different temperatures as a reference temperature is provided.
  • a thermopile sensor is installed for different temperatures of the above black body furnace. Temperature measurement based on the individual difference of the thermopile sensor, and at least one of the inside of the thermopile sensor and the inside of the device incorporating the thermopile sensor is provided.
  • the black body furnace reference temperature stored in the storage device is stored in the storage device by a program stored in at least one of the thermopile sensor and the device incorporating the thermopile sensor. Creates unique temperature measurement data based on the data as discrete plot temperature characteristics, and plots using multiple plot data before and after each plot.
  • thermopile sensor The curve characteristics are sequentially processed, and the free-curve temperature characteristics obtained by continuously connecting these plot-to-plot curve characteristics are unique to the thermopile sensor.
  • the individual differences between the thermopile devices can be automatically set. This is a temperature measurement method using infrared rays, which is characterized by calibration.
  • thermopile sensor With this configuration, it is possible to perform high-accuracy measurement with few errors regardless of the inherent characteristics of the thermopile sensor and the inherent characteristics of the device incorporating the thermopile sensor. .
  • the invention according to claim 22 of the present application is characterized in that a heating element incorporated so as to be thermally directly connected to the cold junction region, and a heating element which is thermally directly connected to the cold junction region and structurally
  • a heating element which is thermally directly connected to the cold junction region and structurally
  • a phase detector for detecting the presence / absence of inversion of the positive / negative voltage value region of the thermopile output, and a converter for converting the presence / absence of the phase inversion into a 2-bit digital signal. This is a sample sensor that detects the temperature of the cold junction temperature measuring element.
  • the temperature of the cold junction is not feedback-controlled so that the output voltage of the thermopile coincides with the zero point as in the prior art, Since control is performed so that the zero point of the output voltage value is forcibly passed at a constant gradient, the measurement time can be significantly reduced.
  • the cold junction area and the cold junction temperature measuring element are pre- By heating to the bias temperature, the change in resistance of the cold junction temperature measuring element is only the temperature rise in the hot junction area due to infrared energy from the measurement target, so the thermal response speed is extremely high. It is faster and can be synchronized as much as possible with temperature changes in the cold junction area.
  • the invention according to claim 23 of the present application is characterized in that the heating element incorporated so as to be thermally directly connected to the cold junction region, and the heating element is thermally connected to the cold junction region.
  • the temperature of the cold-junction region was integrated so as to be synchronized with the temperature change of the cold-junction region and the thermal response speed, and the cold-junction region was unilaterally and forcibly heated by the heating element.
  • a phase detector that detects whether the output voltage value of the thermopile is inverted with respect to a voltage threshold that is set in advance and is a reference voltage value, and a 2-bit digital signal indicating whether the phase inversion is present.
  • a thermopile sensor having a converter for converting to an output and detecting the temperature of the cold junction temperature measuring element in synchronization with the digital signal.
  • the temperature of the cold junction region is not feedback-controlled so that the output voltage of the thermopile coincides with the zero point as in the related art, but the output voltage of the thermopile is not changed. Since the zero point is controlled so that it passes through at a constant gradient, the measurement time can be greatly reduced.
  • the resistance change of the cold junction temperature measuring element can be measured from the measurement target. Since only the temperature rise of the hot junction region due to the infrared energy is obtained, the thermal response speed is extremely fast, and the temperature can be synchronized as much as possible with the temperature change of the cold junction region.
  • the invention according to claim 24 of the present application is the temperature measurement method using infrared light according to claim 22 of the present application, wherein the heating element generates heat and is maintained at a constant temperature;
  • This is a thermopile sensor characterized by comprising a variable temperature system that makes the temperature variable in a temperature range.
  • the cold junction region and the cold junction area are previously determined by the steady temperature system.
  • the junction temperature measuring element can be heated to a constant bias temperature to reduce the measurement time. Furthermore, since the resistance change of the cold junction temperature measuring element is only the temperature rise in the hot junction area due to infrared energy from the measurement target, the thermal response speed becomes extremely fast, and the temperature of the cold junction area is extremely high. It can be synchronized as much as possible with temperature changes. On the other hand, the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 25 of the present application is the temperature measurement method using infrared rays according to claim 23 of the present application, wherein the heating element generates heat and is maintained at a constant temperature;
  • a thermopile sensor comprising a variable temperature system that is variable in temperature within a temperature range.
  • the cold junction region and the cold junction temperature measuring element can be preliminarily heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the temperature rise in the hot junction area due to infrared energy from the measurement target, so that the thermal response speed is extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change. On the other hand, the measurement time can be significantly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 26 of the present application is directed to the method for measuring temperature by infrared light according to claim 22 of the present application, wherein at least one of the heating element and the cold junction temperature measuring element is self-controlled.
  • This is a thermopile sensor characterized by using a resistor having a positive temperature coefficient characteristic.
  • the invention according to claim 27 of the present application is directed to the temperature measurement method using infrared light according to claim 23 of the present application, wherein at least at least one of the heating element and the cold junction temperature measuring element is used.
  • This is a thermopile sensor characterized by using a resistor having a self-control type positive temperature coefficient characteristic for one of them.
  • thermo-pile sensor having a structure in which at least one system composed of a resistor body including: is incorporated as a heating element system so as to be thermally directly connected to the cold junction region. It is.
  • the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, since the resistance change of the cold junction temperature measuring element is only the temperature rise of the hot junction area due to the infrared energy from the measurement target, the thermal response speed becomes extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change.
  • the measurement time can be significantly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • thermo-pile sensor having a structure in which at least one system composed of a resistor including the following is incorporated as a heating element system so as to be thermally directly connected to the cold junction region. is there.
  • these systems can be separated into a steady temperature system and a variable temperature system. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced.
  • the change in resistance of the cold junction Since only the temperature rise in the hot junction region due to infrared energy is obtained, the thermal response speed is extremely fast, and the temperature can be synchronized as much as possible with the temperature change in the cold junction region.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 30 of the present application is directed to the temperature measurement method using infrared light according to claim 24 of the present application, wherein the method includes a self-controlling positive temperature coefficient characteristic having different resistance characteristics electrically insulated between elements.
  • a thermopile sensor having a structure in which one or more systems composed of two resistors are incorporated as a heating element system so as to be thermally directly connected to the cold junction region. is there.
  • these systems can be separated into a steady temperature system and a variable temperature system. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the change in resistance of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so that its thermal response speed is extremely fast, and the cold junction area It can be synchronized as much as possible with respect to the temperature change.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 31 of the present application is the temperature measurement method using infrared light according to claim 25 of the present application, wherein the method includes a self-controlling positive temperature coefficient characteristic of different resistance characteristics electrically insulated between elements.
  • a thermopile sensor having a structure in which one or more systems composed of two resistors are incorporated as a heating element system so as to be thermally connected directly to the cold junction region. is there.
  • these systems can be used as a steady temperature system and a variable temperature system.
  • System can be separated. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the resistance change of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction region due to infrared energy from the measurement target, so that the thermal response speed is extremely fast, and the temperature of the cold junction region is low. Synchronize as much as possible with changes.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 32 of the present application is directed to the temperature measurement method using infrared light according to claim 24 of the present application, wherein the method includes a self-control positive temperature coefficient characteristic of different resistance characteristics electrically insulated between elements. It has a structure in which at least one system composed of a plurality of pairs of two resistors is combined as a heating element system so as to be thermally directly connected to the cold junction region. This is a sample sensor characterized by this.
  • these systems can be separated into a steady temperature system and a variable temperature system. That is, the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the resistance change of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so the thermal response speed is extremely fast, and the cold junction It can be synchronized as much as possible with temperature changes.
  • the measurement time can be greatly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 33 of the present application is directed to the temperature measurement method using infrared light according to claim 25 of the present application, wherein the self-insulating elements having different resistance characteristics are electrically insulated between elements.
  • the cold junction area and the cold junction temperature measuring element are previously heated to a constant bias temperature by the steady temperature system, and the measurement time can be reduced. Furthermore, the resistance change of the cold junction temperature measuring element is only the amount of temperature rise in the hot junction area due to infrared energy from the measurement target, so the thermal response speed is extremely fast, and the cold junction It can be synchronized as much as possible with temperature changes.
  • the measurement time can be significantly reduced by unilaterally and forcibly changing the temperature of the cold junction region by using a variable temperature system.
  • the invention according to claim 34 of the present application is the temperature measurement method using infrared light according to claim 24 of the present application, wherein the heating element system has two types of self-control having different self-saturation stable temperatures.
  • This is a thermopile sensor in which a resistor having a positive temperature coefficient characteristic is arranged.
  • the self-saturation stable temperature is around the eardrum temperature (for example, 34 ° C).
  • the temperature of the area and the cold junction temperature measuring element must be set in advance to a constant bias temperature (3
  • the self-saturation stable temperature is higher than the eardrum temperature (for example, 50 ° C).
  • the temperature of the eardrum can be measured by performing variable heating at 42 ° C). At this time, a resistor having a self-regulating positive temperature coefficient characteristic whose self-saturation stable temperature is near the eardrum temperature has a constant self-saturation stable temperature (3) regardless of ambient temperature changes.
  • thermopile sensor 4 ° C to prevent overheating of the thermopile sensor.
  • self-stable saturation temperature is higher than eardrum temperature.
  • the variable resistor is heated by variable heating, but even if the temperature control of variable heating becomes impossible due to malfunction or failure, it will not be heated above the self-saturation stable temperature (50 ° C). Therefore, the overheat accident of the thermopile sensor is prevented.
  • the invention according to claim 35 of the present application is the temperature measurement method using infrared light according to claim 25 of the present application, wherein the heating element system has two types of self-control having different self-saturation stable temperatures.
  • This is a thermopile sensor in which a resistor having a positive temperature coefficient characteristic is arranged.
  • the one with a low self-saturation stable temperature is stabilized at a constant temperature of the bias temperature as a steady temperature system, and the one with a high self-saturation temperature is a variable temperature system as a variable temperature system.
  • the area can be heated. At this time, it is possible to prevent the thermopile sensor from overheating without adding a safety device.
  • the saturation self-stabilizing temperature is maintained at a constant temperature without feedback control, so that the number of parts can be reduced, which leads to cost reduction and product reduction. Contributes to improvement in strength.
  • the invention according to claim 36 of the present application is the temperature measurement method using infrared light according to any one of claims 26 to 35, wherein the self-controlling positive temperature coefficient characteristic of the heating element system is At least one of a resistor including a self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element system and a resistor including the self-controlling positive temperature coefficient characteristic of the cold junction temperature measuring element system is formed by vapor deposition on the substrate surface. Is a thermopile sensor.
  • Thermopile sensors are generally formed on the surface of a silicon pellet, silicon chip, or silicon wafer using semiconductor lamination technology. Therefore, even when forming a resistor having a self-controlling positive temperature coefficient characteristic, it is possible to form the resistor using the vapor deposition technique, which is one of the semiconductor lamination techniques, to achieve the thermopile sensor of the present invention. It is possible to increase the degree of integration and efficiently produce this. Also, it is easy to thermally connect the resistor including the self-control type positive temperature coefficient characteristic and the cold junction region of the thermopile thermally.
  • the invention according to claim 37 of the present application is the method for measuring temperature by infrared light according to any one of claims 26 to 35, wherein the self-controlling positive temperature coefficient of the heating element system is A resistor including characteristics, and a self-connection of the cold junction temperature measuring element system A thermopile sensor characterized in that at least one of the resistors having a controlled positive temperature coefficient characteristic is formed on a substrate surface by paste baking.
  • thermopile sensor of the present invention can be efficiently manufactured.
  • the invention according to claim 38 of the present application is the temperature measurement method using infrared light according to any one of claims 26 to 35, wherein the heating element system has a self-controlling positive temperature coefficient. At least one of the resistor having the characteristic and the resistor having the self-controllable positive temperature coefficient characteristic of the cold junction temperature measuring element system is printed on the surface of the substrate in a planar manner. This is a characteristic thermopile sensor.
  • thermopile sensor of the present invention can be efficiently manufactured.
  • the invention according to claim 39 of the present application is the temperature measurement method using infrared rays according to claim 22 or 23 of the present application, wherein the heating element region in which the heating element system is arranged and a cold junction temperature measurement.
  • the cold junction temperature measurement element area where the element system is located is located outside the cold junction area with the hot junction area as the center, on the substrate where the cold junction area is located, and with each other. This is a thermopile sensor that is arranged so as to be aligned in a direction.
  • thermopile sensor of the present invention With this configuration, the arrangement of the hot junction region and the cold junction region, which are applied in the conventional thermopile sensor, can be applied to the thermopile sensor of the present invention.
  • the invention according to claim 40 of the present application is the temperature measuring method using infrared rays according to claim 22 or 23 of the present application, wherein the heating element region in which the heating element system is arranged and a cold junction temperature measurement.
  • the cold junction temperature measuring element area where the element system is arranged is arranged outside the cold junction with the hot junction as the center, on the substrate where the cold junction is arranged, and in a vertical direction to each other
  • the thermopile sensor is characterized by being arranged as described above.
  • thermopile sensor of the present invention can be added to the thermopile sensor of the present invention. Can also be applied.
  • the invention according to claim 41 of the present application is directed to the temperature measurement method using infrared rays according to claim 22 or 23 of the present application, wherein the heating element region in which the heating element system is arranged and a cold junction temperature measurement.
  • the cold junction temperature measuring element area in which the element system is arranged is arranged outside the cold junction with the hot junction as the center, outside the substrate on which the cold junction is arranged, and mutually vertically
  • the thermopile sensor is characterized by being arranged as described above.
  • the invention according to claim 42 of the present application is the temperature measurement method using infrared light according to claim 22 or 23, wherein the temperature of the heating element region in which the heating element system is arranged and the temperature of the cold junction are measured.
  • the thermopile sensor is characterized in that the shape with the cold junction temperature measuring element region in which the element system is arranged is a continuous square.
  • thermopile sensor of the present invention With this configuration, the arrangement of the hot junction region and the cold junction region, which have been applied in the conventional thermopile sensor, can be applied to the thermopile sensor of the present invention. .
  • the invention according to claim 43 of the present application is the temperature measurement method using infrared rays according to claim 22 or 23 of the present application, wherein the temperature of the heating element region in which the heating element system is arranged and the temperature of the cold junction are measured.
  • the thermopile sensor is characterized in that the shape with the cold junction temperature measuring element region in which the element system is arranged is a discontinuous polygon separated by a certain angle.
  • thermopile sensor of the present invention With this configuration, the arrangement of the hot junction region and the cold junction region, which are applied in the conventional thermopile sensor, can be applied to the thermopile sensor of the present invention. .
  • the invention according to claim 44 of the present application is the temperature measurement method using infrared rays according to claim 22 or 23 of the present application, wherein the temperature of the heating element region in which the heating element system is arranged and the temperature of the cold junction are measured.
  • the thermopile sensor is characterized in that the shape of the cold junction temperature measuring element region in which the element system is arranged is a continuous circle.
  • thermopile sensor the arrangement of the hot junction region and the cold junction region, which has been applied in the conventional thermopile sensor, can be applied to the thermopile sensor of the present invention.
  • the invention according to claim 45 of the present application is the temperature measurement method using infrared rays according to claim 22 or 23 of the present application, wherein the temperature of the heating element region where the heating element system is arranged and the temperature of the cold junction are measured.
  • the thermopile sensor is characterized in that the shape with the cold junction temperature measuring element region in which the element system is arranged is a discontinuous circle separated by a certain angle.
  • the arrangement of the hot junction region and the cold junction region applied in the conventional thermopile sensor can be applied to the thermopile sensor of the present invention.
  • the invention according to claim 46 of the present application is directed to the temperature measurement method using infrared rays according to any one of claims 22 to 35 of the present application, wherein a plurality of different temperatures as reference temperatures are provided. It has a storage device for storing temperature measurement data when the temperature measurement is performed sequentially on the black body furnace, and the unique temperature measurement data stored in the storage device is a discontinuous plot. It is created as a plot temperature characteristic, and furthermore, the plot-to-plot curve characteristic processing is sequentially performed for each plot using a plurality of plot data before and after the plot, and these plot-to-plot curves are connected.
  • a storage medium storing a program incorporated in the storage device using a free curve temperature characteristic as a reference of a unique temperature characteristic, and an information processing device for executing the program. Thermopa characterized by Is Rusensa.
  • thermopile sensor product has its own unique temperature characteristics in advance, and high-precision measurement with little error is performed regardless of the thermopile sensor's specific characteristics. Becomes possible.
  • FIG. 1 is a top view and a sectional view showing the structure of a thermopile sensor according to a first embodiment of the present invention.
  • FIG. 2 is a top view showing a thermopile structure of the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 3 is a top view showing a thermopile structure of the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 4 is a diagram showing a resistance-temperature characteristic of the self-control type positive temperature coefficient heating element in the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 5 is a block diagram showing a temperature measuring circuit in the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 6 is a flowchart showing a temperature measurement procedure in the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 7 is a diagram showing the relationship between the temperature and the temperature when the bias temperature is applied in the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 8 is a diagram showing a relationship between one hour of temperature and one hour of thermopile output at the time of temperature measurement in the thermopile sensor according to the first embodiment of the present invention.
  • FIG. 9 is a top view and a sectional view showing the structure of a thermopile sensor according to a second embodiment of the present invention.
  • FIG. 10 is a top view and a sectional view showing the structure of a thermopile sensor according to a third embodiment of the present invention.
  • FIG. 11 is a sectional view showing the structure of a conventional thermopile sensor.
  • FIG. 12 is a block diagram showing a temperature measuring circuit in a conventional thermopile sensor.
  • FIG. 13 is a diagram showing the relationship between one hour of temperature and one hour of thermopile output at the time of temperature measurement in a conventional thermopile sensor.
  • FIGS. 1 and 2 show a thermopile sensor according to an embodiment of the present invention.
  • a number of pits 3 are opened at the center of a silicon.
  • the heat sink 2 having a thickness of about 100 micrometer is formed with a hot junction supporting film 4 having electrical insulation on the upper surface and an insulating thin film 12 on the lower surface.
  • the hot junction support film 4 and the insulating thin film 12 are made of silicon oxide or silicon nitride, and their thickness is about several microns in order to reduce the heat capacity. .
  • thermopile 9 is formed by connecting thermocouples in series.
  • Output terminals 10 are provided at both ends of the thermopile 9.
  • the upper surface of the thermal junction 8 is covered with the infrared ray absorber 11.
  • the thermopile 9 may be formed in a shape as shown in FIG. 3, and the thermal junction 8 may not be covered with the infrared absorber.
  • the area where the cold junction 7 is formed is the cold junction area 20, and the area where the hot junction 8 is formed is the hot junction area 21. This name will be used where necessary.
  • a heating element 22 composed of a self-controlled positive temperature coefficient heating element and a cold junction temperature measuring element composed of a self-controlled positive temperature coefficient heating element 23 are arranged outside the four sides of the cold junction region 20 when viewed from the center of the diaphragm 24, in the order of the cold junction temperature measuring element 23 and the heating element 22.
  • the heating elements 22 and the cold junction temperature measuring element 23 are electrically connected to each other, and electrodes 25 and 26 made of Au or the like are formed at both ends.
  • the area where the heating element 22 is formed is the heating element area 27, and the area where the cold junction temperature measuring element 23 is formed is the cold junction temperature measurement. This is referred to as an element region 28, and this name will be used as needed hereinafter.
  • thermopile sensor 1 is fixed to the sensor stem 13 by die-bonding the thermopile sensor 1 to the sensor stem 13 as described above.
  • thermopile sensor 1 First, using a CVD device, etc., heat bonding consisting of silicon oxide or silicon nitride on both sides of the silicon pellet, silicon chip, or silicon wafer that becomes the heat sink 2
  • the support film 4 and the insulating thin film 12 are formed to a thickness of several microns.
  • the surface of the heat sink 2 is made of a dissimilar metal (the first thermocouple material 5 and the second thermocouple material 6) and connected in series to form a thermopile having a cold junction 7 and a hot junction 8.
  • the combination of the first thermocouple material 5 and the second thermocouple material 6 forming the thermopile 9 include, for example, polysilicon and aluminum, or bismuth and antimony.
  • a self-controlling positive temperature coefficient heating element of the heating element 22 and a self-controlling positive temperature coefficient heating element of the cold junction temperature measuring element 23 are formed on the surface of the heat sink 2 by vapor deposition. They can also be formed by paste baking. Alternatively, it may be formed by planar printing.
  • thermo-mobile sensor 1 is completed.
  • thermopile sensor Accordingly, details of the self-control type positive temperature coefficient heating element in the thermopile sensor according to the embodiment of the present invention and a temperature measurement method using such a thermopile sensor will be described.
  • the self-control type positive temperature coefficient heating element is a heating element having the property that its electrical resistance increases as the temperature of the heating element rises due to energization.
  • the self-control type positive temperature coefficient heating element suddenly has an electric resistance at a certain temperature (self-saturation stable temperature).
  • self-saturation stable temperature Has the property of increasing.
  • the self-control type positive temperature coefficient heating element rapidly increases its electrical resistance at a self-saturation stable temperature.
  • the positive temperature coefficient heating element is maintained at a constant self-saturation stable temperature.
  • the self-control positive temperature coefficient heating element is a heating element that can control the heating temperature by itself.
  • the self-controlling positive temperature coefficient heating element of the heating element 22 performs different temperature control before the start of temperature measurement and after the start of temperature measurement.
  • a voltage is applied to generate heat, and the cold junction 7 is controlled to be maintained at a constant bias temperature.
  • the temperature is further increased from the bias temperature to unilaterally and forcibly heat the cold junction 7.
  • the temperature rise is naturally suppressed at the self-saturation stable temperature. Therefore, when heating the self-controlling positive temperature coefficient heating element of the heating element 22, there is no possibility of overheating more than necessary, so that it is safe.
  • the self-controlling positive temperature coefficient heating element of the cold junction temperature measuring element 23 does not flow an electric current from the outside in particular, and the heating element 22 includes the self-controlling positive temperature coefficient heating element having the positive temperature coefficient characteristic.
  • the temperature is changed in synchronization with the cold junction 7 (at the same change rate) by the forced heating, and the temperature of the cold junction 7 is detected by the change in the internal resistance at that time.
  • the self-control positive temperature coefficient heating elements of the heating element 22 and the cold junction temperature measuring element 23 are shown in Fig.
  • the shape may be a frame, or may be a concentric circle, a regular polygon, or a shape obtained by dividing such a circle or regular polygon at a certain angle according to the shape of the thermopile 9. .
  • thermopile sensor 1 Next, how the temperature is measured by the thermopile sensor 1 will be described with reference to the block circuit diagram of FIG.
  • thermopile sensor 1 outputs a voltage that depends on the infrared dose radiated from the measurement target and the temperature of the cold junction region 20. That is, the thermopile sensor 1 outputs a voltage corresponding to the difference between the temperature of the measurement target, that is, the temperature of the hot junction 8 and the temperature of the cold junction region 20.
  • Region 2 If the temperature of 1 is higher than the temperature of the cold junction region 20, it is output as a positive voltage value, and the temperature of the hot junction region 21 is lower than the temperature of the cold junction region 20. When it is low, it is output as a negative voltage value. When the temperature of the hot junction area 21 is equal to the temperature of the cold junction area 20, the output of the thermopile sensor 1 becomes 0.
  • the amplifier 14 connected to the thermopile sensor 1 amplifies the minute voltage output from the thermopile sensor 1 to a predetermined magnitude.
  • the phase detector 29 connected to the amplifier 14 determines whether or not the output voltage value of the thermopile sensor 1 amplified by the amplifier 14 has reversed the phase between the positive and negative voltage values. Inverted Send to the information processing device 18 as a 2-bit digital signal of “Yes” or “No”.
  • the self-control type positive temperature coefficient heating element of the cold junction temperature measuring element 23 is a temperature measuring element for measuring the temperature of the cold junction area 20 and converts a change in self resistance value into a voltage value. This voltage value is amplified by an amplifier 30 connected to the self-control positive temperature coefficient heating element of the cold junction temperature measuring element 22.
  • the information processing device 18 has a built-in A / D converter, and the information processing device 18 outputs the output signal from the amplifier 30 in synchronization with the output signal of the phase inversion “yes” from the phase detector 29.
  • the temperature value of the measurement target is obtained by performing detection and arithmetic processing, and this is displayed on the display device 19.
  • thermopile sensor 1 As an example in the flow chart of Fig. 6. This will be described in more detail with reference to FIG.
  • the procedure is roughly divided into a measurement preparation stage and a measurement stage.
  • the measurement preparation stage will be described.
  • the information processing device 18 operates (1), the output of the cold junction temperature measuring element 23 is input via the amplifier 30, and the temperature is converted by the built-in A / D converter. Then, the temperature of the cold junction region 20 is obtained (2).
  • the drive IC 31 is driven by the information processing device 18 to heat the heating element 22, and the cold junction area 20 and the cold junction temperature measuring element area 28 are kept at a constant bias temperature.
  • This bias temperature is appropriately determined, for example, when the thermopile sensor is applied to an ear thermometer and is set at 34 ° C which is near the eardrum temperature. You.
  • the heating element 22 is feedback-controlled by the so-called “pendulum type temperature control” as shown in FIG.
  • the thermopile sensor such feedback control is performed in order to reduce the thermopile output voltage to zero when measuring the temperature of the measurement target. It has been a problem that it takes a long time to reduce to zero, and that the measurement accuracy decreases due to temperature disturbance.
  • the feedback control performed here is intended only to reduce the measurement time by applying a bias temperature. Therefore, if the temperature of the cold junction region 20 and the temperature of the cold junction temperature measuring element region 28 are within the specified threshold region around the set bias temperature, the effect can be sufficiently obtained. However, it is not required to be as strict as the feedback control performed in the conventional thermopile sensor. That is, the time required to reach the bias temperature is a short time, and there is no particular problem even if there is a disturbance factor in the temperature unless the influence is very large.
  • the information processing device 18 determines whether the temperature of the cold junction region 20 is within the specified threshold region by the output of the cold junction element 23, It is determined whether the temperature gradient is within the specified rate (that is, the temperature disturbance is within the allowable range) (3), and the temperature and its rate of change are determined.
  • the internal storage device of the information processing device 18 has a temperature gradient of “Pendular temperature control” in advance. For, the change rate within the specified threshold is stored as a change rate table. Then, the information processing device 18 reads this rate-of-change table (5), compares it with the measured rate of temperature change in the cold junction region 20 and, if there is a coincident numerical value (6), uses the numerical value. The degree of influence of temperature disturbance is determined (7), and the degree of correction in the measured temperature value is then determined (8) and displayed on the display means 19 (9). As a display method at this time, for example, it is conceivable to rank the degree of the correction in advance and display the rank. At this stage, the preparation for measurement is completed, and it is desirable that the display means 19 simultaneously indicate that fact.
  • thermometer a thermometer is inserted into the ear canal (10), and the temperature is measured by infrared rays emitted from the eardrum.
  • the measurer performs a measurement start operation, for example, when the measurement start switch is pressed.
  • the output of the cold junction temperature measuring element 23 is input to the information processing device 18 via the amplifier 30, and the temperature is converted by the built-in A / D converter to calculate the temperature of the cold junction region 20. obtain
  • the drive IC 31 is driven by the information processing device 18 to rapidly heat the heating element 22, thereby forcing the cold junction area 20 and the cold junction temperature measuring element area 28.
  • the temperature is increased from a bias temperature of 34 ° C to 42 ° C.
  • the thermopile output voltage value is reduced linearly with a constant gradient with respect to the heating element heating time so that the zero point of the thermopile output voltage is forcibly passed.
  • Positive and negative voltage range reversal is unilaterally and forcibly generated with respect to the mopile output.
  • the phase inversion between the positive and negative voltage values is detected by the phase detector 29, and the two-bit digital signal of the phase inversion “Yes” and “No” is detected.
  • the information is sent to the information processing device 18 as a signal.
  • the information processing device 18 determines whether the phase inversion is “present” or “absent” based on the 2-bit digital signal (16). A signal is sent to stop the heating of the heating element 22 by. At this time, if the heating stop signal is not sent for some reason such as a malfunction of the device, the voltage is continuously applied to the heating element 22. However, in this embodiment, a resistor having a self-controlling positive temperature coefficient characteristic is used as the heating element 22, and is maintained at a constant temperature of the self-saturation stable temperature, and is not overheated. .
  • the use of a resistor with a self-regulating positive temperature coefficient characteristic with a self-saturation stable temperature of 50 ° C can be used to prevent overheating without using a special safety device. Is prevented.
  • the output of the cold junction temperature measuring element 23 is input to the information processing device 18 via the amplifier 30 in synchronization with the signal of “presence” of phase inversion, and is output by the built-in AZD converter. Temperature conversion is performed. Further, the temperature disturbance is corrected to obtain the temperature of the cold junction region 20 (17), and this temperature value is displayed on the display device 19 (18), and the temperature measurement is completed.
  • the temperature of the cold junction region 20 obtained in this way is nothing less than the temperature of the hot junction region 21, that is, the temperature of the measurement target, and also the phase inversion of the positive / negative voltage value region of the thermopile output voltage value. Synchronous measurement enables highly accurate measurement with less error. In addition, measurement time can be significantly reduced.
  • the cold junction temperature measuring element region 28 and the heating element region 27 are arranged outside the cold junction region 20 when viewed from the center of the diaphragm 23. May be the heating element area 27 and the cold junction temperature measuring element area 28.In this case, when the bias temperature is applied to the cold junction area 20, the constant temperature is shortened in a shorter time. Can be reached.
  • FIG. 9 shows a thermopile sensor according to this embodiment.
  • the present embodiment is characterized in that the heating element 22 is further divided into a steady-temperature heating element 32 and a variable-temperature heating element 33.
  • the steady temperature system heating element According to 32, the cold junction region 20 is maintained at a constant bias temperature before the temperature measurement starts, and the variable temperature system heating element 33 unilaterally controls the temperature of the cold junction region 20 after the temperature measurement starts. And forcibly change it. That is, the heating to the bias temperature in the measurement preparation stage and the forcible heating of the cold junction region 20 in the measurement stage, which were performed by the single heating element 22 in the first embodiment, are performed in a steady state. Roles are assigned to the temperature system heating element 32 and the variable temperature system heating element 33.
  • Each of these heating elements is composed of a resistor that includes a self-control type positive temperature coefficient characteristic, and the self-saturation stable temperature is variable as a resistance element that includes the self-control type positive temperature coefficient characteristic of the constant temperature system heating element 32.
  • the temperature system heating element 33 uses a temperature lower than the resistance of the resistance element including the self-control type positive temperature coefficient characteristic.
  • an ear thermometer uses a variable temperature system heating element that uses a self-regulating positive temperature coefficient characteristic with a self-saturation stable temperature of 34 ° C, which is the bias temperature, as the steady temperature system heating element 32.
  • a self-regulating positive temperature coefficient heating element having a self-saturation stable temperature of 50 ° C is used as the body element 33.
  • the heating element 32 of the steady-state temperature system is heated to 34 ° C by applying a specified voltage value in the measurement preparation stage, and then further heated. It is maintained at a constant temperature. In addition, even when there is a disturbance factor in the temperature such as a sudden change in the ambient temperature, the temperature is adjusted and maintained at this temperature. Therefore, the feedback control as performed in the first embodiment is not required, and the apparatus configuration can be simplified, the cost can be reduced, and the strength can be improved.
  • no voltage is applied to the variable system heating element 33 in the measurement preparation stage, and the bias temperature is maintained at 34 ° C. following the heating by the steady temperature system heating element 32. Then, voltage is applied for the first time in the measurement stage, and it is forcibly heated from 34 to 42 ° C.
  • the information processing device 18 determines whether the reversal is “present” or “absent” based on the 2-bit digital signal.
  • variable system heating element 33 Send a signal to stop heating. At this time, if the heating stop signal is not sent for some reason such as a malfunction of the device, the voltage is continuously applied to the variable system heating element 33. However, also in this case, the resistance of the variable system heating element 33 including the self-control type positive temperature coefficient characteristic is maintained at a constant temperature of 50 ° C which is a self-saturation stable temperature, and the temperature rises more. No overheating accident without special safety equipment Is prevented.
  • the cold junction temperature measuring element area 28 and the heating element area 27 are arranged outside the cold junction area 20 as viewed from the center of the diaphragm 24 in the order of the heating element area. 27, the cold junction temperature measuring element area 28 may be used.In this case, when a bias temperature is applied to the cold junction area 20, it is possible to reach a constant temperature in a shorter time. Is the same as in the first embodiment.
  • thermopile sensor according to this embodiment is shown in FIG.
  • a cold junction temperature measuring element 23 As shown in FIG. 10, a cold junction temperature measuring element 23, a steady temperature system heating element 32, and a variable temperature system heating element 33 are arranged in a stacked manner.
  • thermopile sensor 1 The manufacturing process of the thermopile sensor 1 will be described. First, using a CVD device or the like, a silicon carbide or silicon chip to become the heat sink 2 or a silicon chip, or a thermal junction supporting film made of silicon oxide or silicon nitride on both sides of a silicon wafer 4 is formed to a thickness of several microns. Next, the self-control type of the cold junction temperature measuring element 23 is deposited on the thermal junction supporting film 4 on the upper surface side of the heat sink 2 by vapor deposition, paste baking, or sheet printing. A resistor with temperature coefficient characteristics is formed, and a thermal junction support film 4 made of silicon oxide or silicon nitride is formed to a thickness of several microns again by CVD equipment or the like. I do.
  • thermopile 9 a resistor including the self-controlling positive temperature coefficient characteristic of the variable temperature system heating element 33 is formed on the surface of the heat sink 2 by vapor deposition, paste baking, or sheet printing. Form.
  • the thermal bonding support film 4 made of silicon oxide or silicon nitride is formed again to a thickness of several microns by the CVD device or the like.
  • a steady temperature system heating element 32 is formed by a deposition method, a paste baking method, a sheet printing method, or the like, including a resistor having a self-control type positive temperature coefficient characteristic. I do. More heat After covering the upper surface of the sink 2 with the thermal bonding support film 4 by using a CVD device or the like and depositing and covering the insulating thin film 12 on the lower surface, the region below the thermopile 9 is removed by wet etching. Thereafter, when the oxide film is removed by wet etching, a thermopile sensor 1 is formed.
  • the cold junction temperature measuring element 23, the constant temperature system heating element 32, and the variable temperature system heating element 33 are arranged in a stacked manner, and an insulating thermal junction is provided between them.
  • the partial support film 4 By interposing the partial support film 4, they are electrically insulated from each other, and exhibit exactly the same operation as the second embodiment when measuring the temperature.
  • the device configuration is compact.
  • thermopile output voltage is forcibly set so that the serpile output voltage value decreases linearly with a constant gradient with respect to the heating element heating time.
  • Phase detector detects phase inversion between positive and negative voltage values when passing
  • thermopile sensors shown in the first to third embodiments a voltage threshold value serving as a reference voltage value is set, and the thermopile output voltage is set with respect to this voltage threshold value.
  • the value is forcibly passed so that the value temporarily decreases with a constant gradient, and the phase inversion of the thermopile output voltage value with respect to the voltage threshold is detected by the phase detector 29.
  • Information processing device as a 2-bit digital signal
  • This voltage threshold is set near the zero point in the positive region or the negative region of the voltage value of the thermopile output voltage. In particular, it may be provided in both the positive region and the negative region to form a pair of voltage thresholds. I like it. The reason is described below.
  • the phase detector 29 sends to the information processing device 18 as a 2-bit digital signal of “presence” and “absence” of the phase inversion with respect to the voltage threshold.
  • the output of the cold junction temperature measuring element 23 is input to the information processing device 18 via the amplifier 30 in synchronization with the signal of the reversal “presence”, and is sent to the built-in A / D converter.
  • the temperature is further converted to obtain the temperature of the cold junction region 20.
  • the storage device built in the information processing device 18 has a thermopile output voltage value. A relational expression between the temperature corresponding to the zero point of the above and the temperature corresponding to the voltage threshold is input in advance, and the temperature data of the cold junction region 20 is input to this relational expression.
  • the temperature of the thermal junction region 21, that is, the temperature of the measurement target can be obtained by calculation. If the voltage threshold is set in both the positive and negative regions of the thermopile voltage output value, the above operation can be performed twice, and therefore, measurement with less error and high accuracy can be performed. .
  • the average value of the temperature obtained for each of the voltage thresholds in the positive region and the negative region is obtained.
  • the temperature of the thermal junction region 21, that is, the temperature of the measurement target is obtained. Therefore, it is preferable because the arithmetic processing can be simplified and the measurement efficiency can be increased.
  • thermopile sensor according to the present embodiment is obtained by adding a self-calibration function that configures a measurement error caused by a temperature characteristic inherent to the device to the thermopile sensor described in the first to fourth embodiments.
  • thermopile sensor When the thermopile sensor is completed as a product, the temperature of a blackbody furnace with multiple reference temperatures is measured for each device. For example, in an ear thermometer, several reference temperatures are determined in the range of 34 ° C to 42 ° C, which is the above-mentioned bias temperature, and the temperature is measured sequentially for the blackbody furnace at each of these temperatures.
  • the result of the temperature measurement is stored in a storage device built in the information processing device 18 and graduated with respect to the reference temperature. Further, the information processing device 18 has a built-in program for interpolating each data graduated in this way using a curve between the data, and this program is used to execute each of the above-mentioned data. The evening is converted into a continuous curve and stored in the storage device described above, and the product is shipped when the processing up to this point is completed. In other words, at this stage, a thermopile sensor or an ear thermometer incorporating the thermopile sensor, etc. The device has a built-in reference continuous curve corresponding to each temperature characteristic.
  • the information processing device 18 detects the temperature value of the measurement target based on the above reference continuous curve. By directly deriving, the inherent error between devices is self-calibrated, and high-precision measurement can be performed.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

L'invention concerne un capteur à thermopile et un procédé destiné à mesurer la température au moyen d'un rayonnement infrarouge. Afin de mesurer la température d'une cible de mesure avec rapidité, avec une précision élevée et en toute sécurité, la température de la soudure froide d'une thermopile est maintenue avant la mesure à une température de polarisation constante et modifiée de manière unidirectionnelle et par la force en cours de mesure. La tension de sortie de cette thermopile est réduite linéairement à un gradient constant et amenée à passer par le point zéro, ce qui provoque une inversion de phase entre les zones de tension positive et négative. Ainsi, la température de la soudure froide est mesurée en synchronisme avec l'inversion de phase. Dans un autre mode de réalisation, la température de la soudure froide est mesurée en synchronisme avec l'inversion de phase de la tension de sortie de la thermopile par rapport à une valeur seuil de tension préétablie.
PCT/JP2000/000893 2000-02-17 2000-02-17 Capteur a thermopile et procede destine a mesurer la temperature au moyen d'un rayonnement infrarouge WO2001061295A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2000225727A AU2000225727A1 (en) 2000-02-17 2000-02-17 Thermopile sensor, and method of measuring temperature with infrared radiation
PCT/JP2000/000893 WO2001061295A1 (fr) 2000-02-17 2000-02-17 Capteur a thermopile et procede destine a mesurer la temperature au moyen d'un rayonnement infrarouge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2000/000893 WO2001061295A1 (fr) 2000-02-17 2000-02-17 Capteur a thermopile et procede destine a mesurer la temperature au moyen d'un rayonnement infrarouge

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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127368U (fr) * 1977-03-18 1978-10-09
JPH01123180A (ja) * 1987-11-09 1989-05-16 New Japan Radio Co Ltd 高周波パルス成形回路
US4900162A (en) * 1989-03-20 1990-02-13 Ivac Corporation Infrared thermometry system and method
US4904090A (en) * 1986-11-29 1990-02-27 Thorn Emi Plc Temperature sensing arrangement
JPH0417301A (ja) * 1990-05-10 1992-01-22 Mitsui Toatsu Chem Inc 正特性薄膜サーミスタ
JPH0590646A (ja) * 1991-03-05 1993-04-09 Citizen Watch Co Ltd サーモパイル型赤外線センサおよびその製造方法
JPH09292283A (ja) * 1996-04-26 1997-11-11 Nippon Avionics Co Ltd 赤外線熱画像装置の温度テーブル自動作成装置
JPH11258055A (ja) * 1998-03-12 1999-09-24 Omron Corp サーモパイル型温度センサ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127368U (fr) * 1977-03-18 1978-10-09
US4904090A (en) * 1986-11-29 1990-02-27 Thorn Emi Plc Temperature sensing arrangement
JPH01123180A (ja) * 1987-11-09 1989-05-16 New Japan Radio Co Ltd 高周波パルス成形回路
US4900162A (en) * 1989-03-20 1990-02-13 Ivac Corporation Infrared thermometry system and method
JPH0417301A (ja) * 1990-05-10 1992-01-22 Mitsui Toatsu Chem Inc 正特性薄膜サーミスタ
JPH0590646A (ja) * 1991-03-05 1993-04-09 Citizen Watch Co Ltd サーモパイル型赤外線センサおよびその製造方法
JPH09292283A (ja) * 1996-04-26 1997-11-11 Nippon Avionics Co Ltd 赤外線熱画像装置の温度テーブル自動作成装置
JPH11258055A (ja) * 1998-03-12 1999-09-24 Omron Corp サーモパイル型温度センサ

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