WO2002009936A1 - Alliages sans plomb a proprietes d'agent mouillant ameliorees - Google Patents
Alliages sans plomb a proprietes d'agent mouillant ameliorees Download PDFInfo
- Publication number
- WO2002009936A1 WO2002009936A1 PCT/US2001/022778 US0122778W WO0209936A1 WO 2002009936 A1 WO2002009936 A1 WO 2002009936A1 US 0122778 W US0122778 W US 0122778W WO 0209936 A1 WO0209936 A1 WO 0209936A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- alloy
- range
- electronic device
- die
- metallic contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- Alternative contemplated alloys comprise at least two metals selected from the group consisting of Sn, Ag, Bi, Zn, and Cu, wherein the alloy further comprises at least one sacrificial chemical element other than Sn, Ag, Bi, Zn, and Cu in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
- Still further alternative alloys comprise at least two metals selected from the group consisting of Sn, Sb, Bi, and Ag, wherein the alloy further comprises at least one sacrificial chemical element other than Sn, Sb, Bi, and Ag in more than a trace amount ⁇ i.e., greater than 10 ppm) that has an oxygen affinity higher than the alloy.
- the die preferably comprises a semiconductor or an integrated circuit, and the metallic contact preferably comprises copper or a copper alloy.
- the alloy comprises Zn, Al, Mg, and Ga, preferably with Zn in a range of 85 to 95 wt%, Al in a range of 3 to 8 wt%, Mg in a range of 1 to 5 wt%, and Ga in a range of 1 to 5 wt%.
- Other particularly contemplated alloys comprise Ag, Cu, Bi, and Zn, preferably at a composition in which Ag is in a range of 1 to 5 wt%, Cu is in a range of 0.5 to 2.5 wt%, Ag and Cu are in a range of 0 to 5 wt% and 0-2.5wt%, respectively, Ag and Bi are in a range of 0 to 5 wt% and 0-6 wt%, respectively, or Zn and Bi are in a range of 0.5 to 2.5 wt% and 0 to 6 wt%, respectively, with the balance being Sn.
- Still further especially contemplated alloys comprise Sn, Ag, Bi, and Sb, preferably in a composition in which Sb is in a range of 5 to 15 wt% and Bi is in a range of 0 to 6 wt% and the balance being Sn, or in a composition in which Ag is in a range of 20 to 30 wt% and Sb is in a range of 5 to 15 wt% and the balance being Sn.
- the sacrificial chemical element having a oxygen affinity higher than the alloy is Al, Ba, Ca, Ce, Cs, Hf, Li, Mg, Nd, P, Sc, Sr, Ti, Y, or Zr. It is further preferred that the element is present in a concentration between about 10 ppm and 1000 ppm.
- the melting point of contemplated alloys is at least 270°C, and preferably between 270°C and 330°C.
- FIG. 1 is a schematic side view of an electronic device according to the inventive subject matter.
- the term "alloy” refers to a homogeneous mixture or solid solution of two or more metals, in which the atoms of one metal replace or occupy interstitial positions between the atoms of the other.
- oxygen affinity refers to the propensity of a compound or element to react with radical, molecular, or ionic oxygen to form the respective oxide, which may be chemically stable ⁇ i.e., the oxide can be isolated), or may further react into a chemically and/or thermodynamically more stable form. For example, calcium oxidizes under identical reaction conditions at a considerably faster rate than platinum, and has therefore a significantly higher oxygen affinity than platinum under the scope of this definition.
- an electronic device 100 has a substrate 110 onto which an electrical contact 120 is disposed.
- a coupling layer 130 electrically connects and physically couples the die 140 to the electrical contact 120.
- the substrate 110 is typically a material employed in packaging integrated circuit dies, and contemplated materials include molded plastics, laminated plastics, pressed ceramics and laminated ceramics. Many materials and configurations for suitable substrates are known in the art, and all of them are contemplated for use in conjunction with the teachings presented herein. For example, a collection of suitable substrates can be found in Electronic Packaging & Interconnection Handbook by CA. Harper, published by McGraw-Hill, 2 nd edition, 1997, (ISBN 0-07-026694-8).
- electrical contact 120 it is contemplated that a wide variety of electrical contacts are appropriate, and especially preferred contacts include copper contacts, or copper contacts that are sputtered and/or plated with a gold or silver layer. Where resistance to corrosion is particularly desirable, appropriate contacts may also include noble metals and their alloys, including gold, platinum, silver, etc. While it is contemplated that the contact or contacts are considerably thinner than the substrate ⁇ e.g., a conductive trace or thin metal layer of less than 500 microns), pin-shaped contacts or contacts considerably thicker than 500 microns are also contemplated. For example, where the contact is concurrently used as a heat sink, a copper plate with a thickness of about 800-1000 microns or more maybe employed.
- alloys comprising Zn, Mg, Al, and Ga, are generally preferred, various alternative alloys are also contemplated, so long as the melting temperature is at least 270°C, preferably in a range of about 270°C - 450°C, and even more preferably 280°C - 380°C.
- an alternative alloy may comprise Sn, Ag, Bi, Zn, and Cu.
- the alloy comprises Ag in a range of 1 to 5 wt% with the balance being Sn.
- Cu may be alloyed with Sn in a range of 0.5 to 2.5 wt%.
- Ag and Cu are in a range of 0 to 5 wt% and 0-2.5 wt%, respectively, Ag and Bi are in a range of 0 to 5 wt% and 0-6 wt%, respectively, or Zn and Bi are in a range of 0.5 to 2.5 wt% and 0 to 6 wt%, respectively, with the balance being Sn.
- contemplated alloys may comprise Sn, Ag, Bi, and Sb, preferably in a composition in which Sb is in a range of 5 to 15 wt% and Bi is in a range of 0 to 6 wt% with the balance being Sn, or in a composition in which Ag is in a range of 20 to 30 wt% and Sb is in a range of 5 to 15 wt% with the balance being Sn.
- Pb is a less preferred component of contemplated alloys. It should further be understood that all alloy compositions of the inventive subject matter presented herein may include incidental impuri- ties of organic or inorganic components, elements, and their naturally occurring oxides and/or derivatives. For example, impurities may include oils, antimony, borate, etc.
- soldering step is performed in an oxygen containing atmosphere
- concentrations of the element of 10 ppm to 1000 ppm and more are contemplated.
- elements with a relatively low oxygen affinity ⁇ e.g., titanium
- appropriate concentrations maybe in the range of about 200 ppm - to 1000 ppm and more.
- contemplated alloys may comprise binary, ternary, and higher mixtures of the elements.
- suitable alloys may include mixtures of P and Ti, or Ca, Sr, and P, so long as the mixtures and its individual components have an oxygen affinity that is higher than that of the alloy.
- elements but also organic and/or organometallic molecules may be employed, provided that such molecules have an oxygen affinity greater than the oxygen affinity of the alloy.
- TCEP tris-carboxyethylphosphine
- an organometallic reducing agent ⁇ i.e., an agent with relatively high oxygen affinity
- elements having a higher oxygen affinity than the alloy reduce metal oxides that are known to increase the surface tension of a melting or molten solder. Therefore, a decrease in the amount of metal oxides during soldering will generally reduce the surface tension of the molten solder, and thereby significantly increase the wetting ability of the solder.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002227489A AU2002227489A1 (en) | 2000-07-31 | 2001-07-18 | Lead-free alloys with improved wetting properties |
JP2002516089A JP2004514559A (ja) | 2000-07-31 | 2001-07-18 | ぬれ性の改善された鉛非含有合金 |
EP01984406A EP1309447A4 (fr) | 2000-07-31 | 2001-07-18 | Alliages sans plomb a proprietes d'agent mouillant ameliorees |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22182000P | 2000-07-31 | 2000-07-31 | |
US60/221,820 | 2000-07-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002009936A1 true WO2002009936A1 (fr) | 2002-02-07 |
Family
ID=22829529
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/022778 WO2002009936A1 (fr) | 2000-07-31 | 2001-07-18 | Alliages sans plomb a proprietes d'agent mouillant ameliorees |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1309447A4 (fr) |
JP (1) | JP2004514559A (fr) |
AU (1) | AU2002227489A1 (fr) |
WO (1) | WO2002009936A1 (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102632347A (zh) * | 2012-01-09 | 2012-08-15 | 西安交通大学 | 一种铝基复合材料及铝合金用钎料及钎焊方法 |
CN102814596A (zh) * | 2011-06-07 | 2012-12-12 | 英飞凌科技股份有限公司 | 焊料合金及布置 |
CN104169041A (zh) * | 2011-08-17 | 2014-11-26 | 霍尼韦尔国际公司 | 无铅焊料组合物 |
US9520347B2 (en) | 2013-05-03 | 2016-12-13 | Honeywell International Inc. | Lead frame construct for lead-free solder connections |
CN106271193A (zh) * | 2016-09-23 | 2017-01-04 | 河南科技大学 | 一种铜/铝合金钎焊用钎料及其制备方法 |
CN107663604A (zh) * | 2016-07-27 | 2018-02-06 | 千住金属工业株式会社 | 喷镀用合金、喷镀用合金线、薄膜电容器以及软钎料合金 |
US10046417B2 (en) | 2011-08-17 | 2018-08-14 | Honeywell International Inc. | Lead-free solder compositions |
US20210217919A1 (en) * | 2018-05-28 | 2021-07-15 | Ecole Polytechnique Federale De Lausanne (Epfl) | Excitonic device and operating methods thereof |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4911748A (fr) * | 1972-05-16 | 1974-02-01 | ||
JPS5613456A (en) * | 1979-07-16 | 1981-02-09 | Mitsubishi Alum Co Ltd | Aluminum alloy for brazing filler metal of brazing sheet |
US4929423A (en) * | 1988-03-31 | 1990-05-29 | Cookson Group Plc | Low toxicity alloy compositions for joining and sealing |
SU1731547A1 (ru) * | 1990-08-17 | 1992-05-07 | Московский вечерний металлургический институт | Припой дл пайки и лужени медных сплавов |
US5411703A (en) * | 1993-06-16 | 1995-05-02 | International Business Machines Corporation | Lead-free, tin, antimony, bismtuh, copper solder alloy |
US5527628A (en) * | 1993-07-20 | 1996-06-18 | Iowa State University Research Foudation, Inc. | Pb-free Sn-Ag-Cu ternary eutectic solder |
US5851482A (en) * | 1996-03-22 | 1998-12-22 | Korea Institute Of Machinery & Metals | Tin-bismuth based lead-free solder for copper and copper alloys |
JPH11172352A (ja) * | 1997-12-04 | 1999-06-29 | Sumitomo Metal Mining Co Ltd | 高温はんだ付用Zn合金 |
US5980822A (en) * | 1997-02-15 | 1999-11-09 | Samsung Electronics Co., Ltd. | Leadless alloy for soldering |
JP2000006186A (ja) * | 1998-06-29 | 2000-01-11 | Nissha Printing Co Ltd | インサート成形品の製造方法 |
US6027575A (en) * | 1997-10-27 | 2000-02-22 | Ford Motor Company | Metallic adhesive for forming electronic interconnects at low temperatures |
US6156132A (en) * | 1998-02-05 | 2000-12-05 | Fuji Electric Co., Ltd. | Solder alloys |
US6176947B1 (en) * | 1998-12-31 | 2001-01-23 | H-Technologies Group, Incorporated | Lead-free solders |
US6184475B1 (en) * | 1994-09-29 | 2001-02-06 | Fujitsu Limited | Lead-free solder composition with Bi, In and Sn |
US6228322B1 (en) * | 1998-09-24 | 2001-05-08 | Sony Corporation | Solder alloy composition |
US6241942B1 (en) * | 1995-09-29 | 2001-06-05 | Matsushita Electric Industrial Co., Ltd. | Lead-free solder alloys |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6032975B2 (ja) * | 1977-04-05 | 1985-07-31 | 日本電気株式会社 | 半導体装置 |
US5019336A (en) * | 1989-03-13 | 1991-05-28 | Allied-Signal Inc. | Micro-additions to tin alloys |
JP3601278B2 (ja) * | 1996-12-17 | 2004-12-15 | ソニー株式会社 | はんだ材料 |
US6179935B1 (en) * | 1997-04-16 | 2001-01-30 | Fuji Electric Co., Ltd. | Solder alloys |
JP3945915B2 (ja) * | 1998-08-25 | 2007-07-18 | 住友金属鉱山株式会社 | はんだ用Zn合金 |
JP2000153388A (ja) * | 1998-09-14 | 2000-06-06 | Murata Mfg Co Ltd | はんだ付け物品 |
-
2001
- 2001-07-18 WO PCT/US2001/022778 patent/WO2002009936A1/fr active Application Filing
- 2001-07-18 AU AU2002227489A patent/AU2002227489A1/en not_active Abandoned
- 2001-07-18 EP EP01984406A patent/EP1309447A4/fr not_active Withdrawn
- 2001-07-18 JP JP2002516089A patent/JP2004514559A/ja active Pending
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS4911748A (fr) * | 1972-05-16 | 1974-02-01 | ||
JPS5613456A (en) * | 1979-07-16 | 1981-02-09 | Mitsubishi Alum Co Ltd | Aluminum alloy for brazing filler metal of brazing sheet |
US4929423A (en) * | 1988-03-31 | 1990-05-29 | Cookson Group Plc | Low toxicity alloy compositions for joining and sealing |
SU1731547A1 (ru) * | 1990-08-17 | 1992-05-07 | Московский вечерний металлургический институт | Припой дл пайки и лужени медных сплавов |
US5411703A (en) * | 1993-06-16 | 1995-05-02 | International Business Machines Corporation | Lead-free, tin, antimony, bismtuh, copper solder alloy |
US5527628A (en) * | 1993-07-20 | 1996-06-18 | Iowa State University Research Foudation, Inc. | Pb-free Sn-Ag-Cu ternary eutectic solder |
US6184475B1 (en) * | 1994-09-29 | 2001-02-06 | Fujitsu Limited | Lead-free solder composition with Bi, In and Sn |
US6241942B1 (en) * | 1995-09-29 | 2001-06-05 | Matsushita Electric Industrial Co., Ltd. | Lead-free solder alloys |
US5851482A (en) * | 1996-03-22 | 1998-12-22 | Korea Institute Of Machinery & Metals | Tin-bismuth based lead-free solder for copper and copper alloys |
US5980822A (en) * | 1997-02-15 | 1999-11-09 | Samsung Electronics Co., Ltd. | Leadless alloy for soldering |
US6027575A (en) * | 1997-10-27 | 2000-02-22 | Ford Motor Company | Metallic adhesive for forming electronic interconnects at low temperatures |
JPH11172352A (ja) * | 1997-12-04 | 1999-06-29 | Sumitomo Metal Mining Co Ltd | 高温はんだ付用Zn合金 |
US6156132A (en) * | 1998-02-05 | 2000-12-05 | Fuji Electric Co., Ltd. | Solder alloys |
JP2000006186A (ja) * | 1998-06-29 | 2000-01-11 | Nissha Printing Co Ltd | インサート成形品の製造方法 |
US6228322B1 (en) * | 1998-09-24 | 2001-05-08 | Sony Corporation | Solder alloy composition |
US6176947B1 (en) * | 1998-12-31 | 2001-01-23 | H-Technologies Group, Incorporated | Lead-free solders |
Non-Patent Citations (1)
Title |
---|
See also references of EP1309447A4 * |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10930614B2 (en) * | 2011-06-07 | 2021-02-23 | Infineon Technologies Ag | Chip arrangements |
CN102814596A (zh) * | 2011-06-07 | 2012-12-12 | 英飞凌科技股份有限公司 | 焊料合金及布置 |
US20120313230A1 (en) * | 2011-06-07 | 2012-12-13 | Infineon Technologies Ag | Solder alloys and arrangements |
US20210167034A1 (en) * | 2011-06-07 | 2021-06-03 | Infineon Technologies Ag | Chip arrangements |
US9735126B2 (en) * | 2011-06-07 | 2017-08-15 | Infineon Technologies Ag | Solder alloys and arrangements |
US20170323865A1 (en) * | 2011-06-07 | 2017-11-09 | Infineon Technologies Ag | Chip arrangements |
CN104169041A (zh) * | 2011-08-17 | 2014-11-26 | 霍尼韦尔国际公司 | 无铅焊料组合物 |
US10046417B2 (en) | 2011-08-17 | 2018-08-14 | Honeywell International Inc. | Lead-free solder compositions |
US10661393B2 (en) | 2011-08-17 | 2020-05-26 | Honeywell International Inc. | Lead-free solder compositions |
CN102632347B (zh) * | 2012-01-09 | 2014-07-02 | 西安交通大学 | 一种铝基复合材料及铝合金用钎料及钎焊方法 |
CN102632347A (zh) * | 2012-01-09 | 2012-08-15 | 西安交通大学 | 一种铝基复合材料及铝合金用钎料及钎焊方法 |
US9520347B2 (en) | 2013-05-03 | 2016-12-13 | Honeywell International Inc. | Lead frame construct for lead-free solder connections |
CN107663604A (zh) * | 2016-07-27 | 2018-02-06 | 千住金属工业株式会社 | 喷镀用合金、喷镀用合金线、薄膜电容器以及软钎料合金 |
CN106271193A (zh) * | 2016-09-23 | 2017-01-04 | 河南科技大学 | 一种铜/铝合金钎焊用钎料及其制备方法 |
US20210217919A1 (en) * | 2018-05-28 | 2021-07-15 | Ecole Polytechnique Federale De Lausanne (Epfl) | Excitonic device and operating methods thereof |
Also Published As
Publication number | Publication date |
---|---|
AU2002227489A1 (en) | 2002-02-13 |
EP1309447A4 (fr) | 2005-11-09 |
JP2004514559A (ja) | 2004-05-20 |
EP1309447A1 (fr) | 2003-05-14 |
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