WO1999014801A1 - Procede de lavage de substrat semi-conducteur et procede de production de dispositifs semi-conducteurs utilisant ledit procede de lavage - Google Patents

Procede de lavage de substrat semi-conducteur et procede de production de dispositifs semi-conducteurs utilisant ledit procede de lavage Download PDF

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Publication number
WO1999014801A1
WO1999014801A1 PCT/JP1998/004134 JP9804134W WO9914801A1 WO 1999014801 A1 WO1999014801 A1 WO 1999014801A1 JP 9804134 W JP9804134 W JP 9804134W WO 9914801 A1 WO9914801 A1 WO 9914801A1
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WO
WIPO (PCT)
Prior art keywords
cleaning
liquid
semiconductor substrate
temperature
semiconductor
Prior art date
Application number
PCT/JP1998/004134
Other languages
English (en)
Japanese (ja)
Inventor
Katsuhiro Oota
Koji Hara
Original Assignee
Hitachi, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi, Ltd. filed Critical Hitachi, Ltd.
Publication of WO1999014801A1 publication Critical patent/WO1999014801A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only

Definitions

  • the present invention relates to a cleaning method applied to many electronic component manufacturing processes such as electronic materials, magnetic materials, optical materials, and ceramics (hereinafter, a general cleaning method, a surface treatment method, and the like are collectively referred to as a cleaning method). More particularly, the present invention relates to a method for cleaning a semiconductor substrate suitable for a semiconductor device manufacturing process and a method for manufacturing a semiconductor device using the same.
  • a cleaning method applied to many electronic component manufacturing processes such as electronic materials, magnetic materials, optical materials, and ceramics
  • Conventional general cleaning and drying of a semiconductor wafer is performed by immersing the wafer in a cleaning solution such as a diluted hydrofluoric acid or a mixed solution of ammonia and hydrogen peroxide for a predetermined time and then cleaning the wafer with pure water. , followeded by spin drying
  • a cleaning means that simply immerses a semiconductor wafer on which a high-density semiconductor integrated circuit having a highly irregular surface and a complex surface shape is formed in a chemical solution and pure water, the chemical solution and pure water are replaced in a deep groove-shaped portion on the surface. Difficult, cleaning effect is significantly reduced.
  • JP-A-63-144434 discloses, for example, Japanese Patent Application Laid-Open No. 63-144434 as an effective one for cleaning a semiconductor wafer having been subjected to groove processing.
  • a plurality of ultrasonic generators are arranged so as to surround a semiconductor wafer immersed in a cleaning liquid, and an ultrasonic energy beam is applied to the main surface of the wafer, and each surface of the groove ⁇ is illuminated. Ultrasonic energy is applied.
  • a complex-shaped portion such as a deep groove-shaped portion such as a crown shape or a fin-shaped stacked structure such as a fin shape is subjected to the spin drying or IPA described above. It is difficult to remove them sufficiently by drying methods such as drying. Insufficient cleaning and drying causes various inconveniences such as deterioration of film quality in subsequent processes such as thin film formation, and has a serious adverse effect on the reliability of integrated circuits.
  • the present invention has been made in view of such conventional problems, and a method for cleaning a semiconductor substrate capable of effectively cleaning and drying a semiconductor wafer having a complicated surface shape with sharp irregularities. And a method for manufacturing a semiconductor device using the same. Disclosure of the invention
  • the method for cleaning a semiconductor substrate according to the present invention is characterized in that a cleaning liquid is vaporized in advance and a vapor thereof is condensed on the semiconductor substrate as a pretreatment step of cleaning the semiconductor substrate with a cleaning liquid.
  • the vapor of the cleaning liquid is supplied onto the semiconductor substrate, and the vapor is condensed (liquefied) on the semiconductor substrate, and then the substrate is cleaned with a predetermined cleaning liquid.
  • This coagulation makes it possible to easily supply the cleaning liquid into the fine grooves of the semiconductor substrate.
  • the wettability to the cleaning liquid in the subsequent cleaning process can be increased, and the cleaning with the cleaning liquid can be performed. The effect can be significantly improved.
  • the pressure of the atmosphere filled with the vapor on the semiconductor substrate is raised to a value higher than the saturated vapor pressure of the liquid at the temperature of the atmosphere, or the temperature of the atmosphere becomes the saturated vapor pressure of the liquid. It can be easily carried out by lowering the temperature below the current temperature, or by raising the atmospheric pressure and lowering the temperature.
  • the above-mentioned temperature control can be performed in any of the coagulation process and the drying process by (1) the temperature of the atmosphere itself, (2) the temperature of the semiconductor substrate itself placed in the atmosphere, or (3) both of the atmosphere and the semiconductor. That is, one of the temperatures of the substrate is appropriately controlled.
  • water or a chemical solution is used.
  • Typical examples thereof include an acidic solution containing at least one kind of organic acid including hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, and acetic acid; acidic solution containing at least one of said acidic solution 1 and hydrogen peroxide and fluoride Anmoniumu, 3 en Monia water and Amin least 1: Al force Li solution containing seeds, over and 4 the alkaline solution 3 An alkaline solution containing at least one of hydrogen oxide water and ammonium fluoride, a mixed solution containing an acidic solution of (1) or (2) and an alkaline solution of (3) or (2), or containing water Neutral solutions and the like.
  • the solvent may be an organic solvent. Liquids can be used.
  • a commercially available surfactant such as a cationic surfactant, an anionic surfactant, or an amphoteric surfactant, an organic solvent, or an additive such as a mixture of such a surfactant and an organic solvent is used in combination. You can also.
  • the cleaning liquid used when the cleaning liquid is vaporized in advance and the vapor is condensed on the semiconductor substrate is the same as the cleaning liquid used in the subsequent cleaning step using the liquid. May be different from each other.
  • a typical liquid used to condense the former vapor on a semiconductor substrate is ultrapure water.
  • these two cleaning solutions may be appropriately selected according to the purpose of cleaning the substrate.
  • FIG. 1 is a block diagram of a cleaning method illustrating the basic concept of the present invention
  • FIG. 2 is a block diagram of another cleaning method illustrating an example of the basic concept of the present invention
  • FIG. FIG. 4 is a schematic view schematically showing the infiltration and drying of a cleaning solution into the inside of the fine processing groove
  • FIG. 4 is a schematic view of a cleaning evaluation sample
  • FIG. 5 is a schematic view of a semiconductor device manufacturing process.
  • FIG. 6 is a cross-sectional process diagram of the semiconductor device when the present invention is implemented in the wiring process using A1, and FIG. 6 shows the present invention in the wiring process using Cu in the manufacturing process of the semiconductor device.
  • FIG. 6 is a sectional process view of the semiconductor device when the process is performed.
  • FIG. 1 (a) a semiconductor tank 3 accommodated in a wafer carrier 2 is set in a cleaning tank 1. Then, the steam generator 4 supplies the ultrapure water vapor 6 to the cleaning chamber 5, and then the cleaning chamber 5 is adjusted to an atmospheric pressure equal to or higher than the saturated water vapor pressure of the temperature by the atmospheric pressure adjusting device 7. .
  • the cleaning liquid 8 is supplied to the cleaning tank 1 via the cleaning liquid supply device 9 for cleaning.
  • the semiconductor wafer 3 is transferred to the drying chamber 11 by the wafer transfer apparatus 10 and, as shown in FIG. 1 (c), the vapor pressure of the atmosphere is set by the atmosphere pressure adjusting device 7 in the drying chamber. Is reduced to the saturated water vapor pressure or less.
  • the semiconductor wafer 3 housed in the wafer carrier is installed outside the cleaning tank 1 and steam is supplied. After the cleaning liquid is supplied to the cleaning tank 1, the semiconductor wafer 3 is cleaned. Needless to say, it is also possible to perform the washing by immersing in the tank 1.
  • FIG. 1 shows an embodiment of the present invention.
  • FIG. 6 As another cleaning method of the present invention, as shown in FIG. 6 and supply the cleaning chamber 5 with the atmospheric pressure adjusting device 7 so that the atmospheric pressure is equal to or higher than the saturated steam pressure at that temperature, as in the case of FIG. 1 (a).
  • the cleaning liquid ⁇ is supplied to the cleaning chamber 5 through the cleaning liquid supply device 9 for cleaning.
  • the atmospheric pressure in the cleaning chamber 5 is reduced to a saturated water vapor pressure or lower, as shown in FIG. 2 (c), and drying is performed.
  • FIGS. 1 and 2 are merely examples of the present invention, and it goes without saying that the present invention can be applied to a single-wafer cleaning apparatus for cleaning a single wafer, not shown.
  • Fig. 3 (e) after removing the cleaning liquid from the semiconductor wafer, for example, by pulling up the semiconductor wafer from the cleaning liquid or discharging the cleaning liquid from the cleaning tank, the processing proceeds to Fig. 3 (f).
  • the inside of the drying chamber is evacuated to about 1 Om Torr and dried.
  • heating from the back surface of the wafer simultaneously with the pressure reduction drying can be performed more efficiently.
  • contaminants adhering to the inside of the microfabricated groove can be more reliably removed, and the oxide film can be easily removed at the time of forming the capacitor as described in the section of “Background Art”.
  • a method of cleaning a semiconductor wafer and a method of manufacturing a semiconductor device using the same, which can improve quality and yield, can be realized.
  • Fig. 4 (a) shows a schematic diagram of the cleaning evaluation sample
  • Fig. 4 (b) shows a schematic diagram of its cross section.
  • a poly-Si 15 is formed on the Si substrate 14
  • a micro-machined groove 12 having an opening diameter of 0.5 im and a depth of 2 ⁇ m is formed in the poly-Si. Things.
  • Fe ions were added dropwise to a mixed solution of ammonia, hydrogen peroxide and ultrapure water (however, the mixing ratio was adjusted so that the solution had a pH of 11), and the mixture was heated to 50 ° C.
  • the cleaning evaluation wafer was immersed in the mixed solution for 24 hours and washed with water for 20 minutes. Thereafter, the sample was dried for 20 minutes using an IPA vapor drier to prepare a washing evaluation sample 13 to which Fe ions were adsorbed. Then, in order to measure the Fe ions adsorbed on the cleaning evaluation sample, the cleaning evaluation sample was immersed in hot water at 100 ° C for 30 minutes, and the hot water was collected and evaluated with an atomic absorption spectrometer. The residual amount of Fe adsorption in the sample for use was measured.
  • a cleaning method according to the present invention shown in FIG. 1 (a cleaning step including a pretreatment of a cleaning step of condensing ultrapure water vapor on the wafer) and a conventional method disclosed in, for example, JP-A-63-14434. Washing was carried out by the washing method described above, and both were compared.
  • As the cleaning solution a mixed cleaning solution of hydrofluoric acid, hydrogen peroxide solution and ultrapure water (however, the mixing ratio was adjusted so that the solution had a pH of 3) was prepared.
  • Table 3 shows the measurement results of the residual amount of Fe adsorption in each of the 25 cleaning evaluation samples cleaned by the present invention and the conventional cleaning method.
  • the value was less than or equal to the lower limit of detection of Fe ion of the measuring device (less than 0.4 ppb) in all samples.
  • Fe ions were not detected, indicating the superiority of the cleaning effect of the present invention.
  • FIG. 5 shows a schematic diagram of a cross section of the semiconductor substrate.
  • reference numeral 14 denotes an Si substrate
  • 16 denotes an oxide film formed on the surface of the Si substrate
  • 17 denotes an A1 electrode
  • 18 to 20 denote interlayer insulating layers.
  • SiO 2 film 18 (thickness 200 OA), 3 ⁇ 0 film 19 (thickness 600 ⁇ : I 20 OA) formed by CVD (chemical vapor deposition) method, formed by CVD method It had a three-layer structure of the obtained SiO 2 film 20 (film thickness 200 OA).
  • the Si substrate 14 used was a substrate that had been subjected to a cleaning process in advance by the same cleaning method as in Example 1 (a cleaning process including a pre-process of a cleaning process of condensing water vapor of ultrapure water on a wafer). .
  • through holes 21 with a hole diameter of 1.2 ⁇ m are formed in the interlayer insulating film layer by dry etching using fluorocarbon CF 3 , C 2 F 6, etc. Then, the Al electrode 17 on the semiconductor substrate is exposed.
  • the semiconductor substrate is supplied with steam at 23 ° C. and 20 T 0 rr, and then washed with a treatment solution composed of an organic alkali solution at 80 ° C. for 15 minutes.
  • By-products shown in Figure (b) 22 was removed. Next, it was washed with water for 20 minutes.
  • an A 1 wiring layer 17 ′ is formed on the substrate surface including on the A 1 electrode 17 for multilayering, and is patterned to form a wiring connected to the A 1 electrode 17.
  • the same procedure as described above may be followed.
  • connection status of each wiring layer was investigated. As a result, it was confirmed that there was almost no contact failure between the wiring layers, and that the contact resistance was extremely small compared to the conventional connection. Therefore, according to the present invention, the defect rate was reduced by 5%, and semiconductors could be manufactured with high quality and high yield.
  • the present invention was implemented in a general interconnect formation process using CII (for example, described in JP-A-6-326101) in a semiconductor device manufacturing process.
  • CII for example, described in JP-A-6-326101
  • description will be made with reference to the manufacturing process diagram (cross-sectional view) of the semiconductor device shown in FIG.
  • an insulating film for example, BPSG film 24 (boron phosphorus phosphorus silicate glass)
  • BPSG film 24 boron phosphorus phosphorus silicate glass
  • a film 25 is formed thereon by sputtering
  • a TiN film 26 is formed thereon
  • a Cu film 27 is further deposited thereon.
  • the pre-cleaning process for condensing water vapor on the substrate in advance Used in the cleaning method of the present invention.
  • a resist 28 is applied on the above structure, and patterned by a well-known photolithography and etching technique.
  • the Cu film, the TiN film, and the Ti film are patterned using the resist 28 as a mask. Etch and remove the part other than the part that becomes the wiring.
  • the W film 29 covers the wiring portion having the three-layer structure of the Ti film, the TiN film, and the Cu film remaining in the above-described process according to the CVD method shown in FIG.
  • a passivation film 30 (for example, a TiN film) was entirely formed by a CVD method to complete a structure mainly including a wiring portion.
  • the method of manufacturing a semiconductor device to which the cleaning method of the present invention is applied reduces the rejection rate by 5%, and makes it possible to manufacture the semiconductor device with high quality and high yield.
  • the intended object has been achieved by the present invention.
  • the cleaning liquid easily penetrates into the semiconductor wafer having a complicated surface shape with severe irregularities, thereby performing cleaning and drying. It can be performed effectively and can be used for cleaning semiconductor wafers.
  • the present invention It goes without saying that it can be used not only for cleaning semiconductor wafers, but also for cleaning substrates such as thin film devices and disks.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

L'invention concerne un procédé efficace de lavage et de séchage de substrats semi-conducteurs présentant des formes de surface visiblement irrégulières et complexes, et un procédé de production de dispositifs semi-conducteurs de haute qualité, avec un rendement élevé, en utilisant ce procédé de lavage. Lors du lavage du substrat présentant des sillons fins ayant un rapport d'allongement élevé, tels que des tranchées formées sur la surface, la vapeur d'une solution de lavage est amenée dans la chambre de lavage, et une pression de vapeur saturante ou la température de l'atmosphère sont régulées de manière que la vapeur se condense sur le substrat, constituant ainsi comme une étape de prélavage avec la solution de lavage, ce qui permet à la solution de lavage de s'infiltrer facilement dans les sillons. Grâce à la condensation, la solution de lavage est facilement amenée dans les sillons fins du substrat semi-conducteur.
PCT/JP1998/004134 1997-09-17 1998-09-14 Procede de lavage de substrat semi-conducteur et procede de production de dispositifs semi-conducteurs utilisant ledit procede de lavage WO1999014801A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP25155797A JPH1197406A (ja) 1997-09-17 1997-09-17 半導体基板の洗浄方法及びそれを用いた半導体装置の製造方法
JP9/251557 1997-09-17

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Publication Number Publication Date
WO1999014801A1 true WO1999014801A1 (fr) 1999-03-25

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6385863B1 (en) * 1999-06-04 2002-05-14 Sez Semiconductor-Equipment Zubenor Fur Die Habbleiterfertigung Process and device for drying disk-like objects

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5452894B2 (ja) * 2008-07-17 2014-03-26 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP6696441B2 (ja) * 2017-01-12 2020-05-20 株式会社デンソー ウェットエッチング装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177327A (ja) * 1988-12-27 1990-07-10 Mitsubishi Electric Corp 半導体ウエハの洗浄方法，エツチング方法および半導体ウエハ用処理装置
JPH0327524A (ja) * 1989-06-23 1991-02-05 Mitsubishi Electric Corp 半導体ウエハ用処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02177327A (ja) * 1988-12-27 1990-07-10 Mitsubishi Electric Corp 半導体ウエハの洗浄方法，エツチング方法および半導体ウエハ用処理装置
JPH0327524A (ja) * 1989-06-23 1991-02-05 Mitsubishi Electric Corp 半導体ウエハ用処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6385863B1 (en) * 1999-06-04 2002-05-14 Sez Semiconductor-Equipment Zubenor Fur Die Habbleiterfertigung Process and device for drying disk-like objects

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JPH1197406A (ja) 1999-04-09

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