US20080164453A1 - Uniform critical dimension size pore for pcram application - Google Patents
Uniform critical dimension size pore for pcram application Download PDFInfo
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- US20080164453A1 US20080164453A1 US11/620,671 US62067107A US2008164453A1 US 20080164453 A1 US20080164453 A1 US 20080164453A1 US 62067107 A US62067107 A US 62067107A US 2008164453 A1 US2008164453 A1 US 2008164453A1
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- insulating layer
- pore
- phase change
- change material
- bottom electrode
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- 239000011148 porous material Substances 0.000 title claims abstract description 47
- 239000012782 phase change material Substances 0.000 claims abstract description 51
- 125000006850 spacer group Chemical group 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 239000012071 phase Substances 0.000 description 32
- 239000000377 silicon dioxide Substances 0.000 description 25
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- 230000008859 change Effects 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 150000001787 chalcogens Chemical class 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910005872 GeSb Inorganic materials 0.000 description 2
- 229910018321 SbTe Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
Definitions
- the present invention is directed toward computer memory, and more particularly to a non-volatile phase change memory device.
- non-volatile memory There are two major groups in computer memory: non-volatile memory and volatile memory. Constant input of energy in order to retain information is not necessary in non-volatile memory but is required in the volatile memory.
- non-volatile memory devices are Read Only Memory, Flash Electrical Erasable Read Only Memory, Ferroelectric Random Access Memory, Magnetic Random Access Memory, and Phase Change Memory.
- volatile memory devices include Dynamic Random Access Memory (DRAM) and Static Random Access Memory (SRAM).
- DRAM Dynamic Random Access Memory
- SRAM Static Random Access Memory
- the present invention is directed to phase change memory. In phase change memory, information is stored in materials that can be manipulated into different phases. Each of these phases exhibit different electrical properties which can be used for storing information.
- the amorphous and crystalline phases are typically two phases used for bit storage (1's and 0's) since they have detectable differences in electrical resistance. Specifically, the amorphous phase has a higher resistance than the crystalline phase.
- Glass chalcogenides are a group of materials commonly utilized as phase change material. This group of materials contain a chalcogen (Periodic Table Group 16/VIA) and a more electropositive element. Selenium (Se) and tellurium (Te) are the two most common semiconductors in the group used to produce a glass chalcogenide when creating a phase change memory cell. An example of this would be Ge 2 Sb 2 Te 5 (GST), SbTe, and In 2 Se 3 . However, some phase change materials do not utilize chalcogen, such as GeSb. Thus, a variety of materials can be used in a phase change material cell as long as they can retain separate amorphous and crystalline states.
- chalcogen Periodic Table Group 16/VIA
- phase change material 107 The amorphous and crystalline phases in phase change material are reversible. As shown in FIG. 1 , this is achieved by forming a via 104 lined with insulating material 106 .
- a lower electrode 102 (also referred to as the source) is formed below the phase change material 107 and an upper electrode 101 (also referred to as the drain) is formed above the phase change material 107 .
- a relatively high intensity, short duration current pulse with a quick transition at the trailing edge results in the phase change material 107 melting and cooling quickly.
- the phase change material 107 does not have the time to form organized crystals, thereby creating an amorphous solid phase.
- a relatively low intensity, long duration pulse allows the phase change material 107 to heat and slowly cool, thus crystallizing into the crystalline phase. It is possible to adjust the intensity and duration of the pulses to produce a varying degree of resistance for multi-bit storage in a memory cell.
- a phase change cell is read by applying a pulse of insufficient strength to program, i.e. to alter the phase of, the material 107 .
- the resistance of this pulse can then be read as a “1” or “0”.
- the amorphous phase which carries a greater resistance is generally used to represent a binary 0.
- the crystalline phase which carries a lower resistance can be used to represent a binary 1.
- the phases can be used to represent, for example, “00”, “01”, “10”, and “11”.
- An exemplary aspect of the invention is a method of forming a memory cell.
- the method for forming the memory cell begins with standard front end of line (FEOL) wafers generally forming with a plurality of insulating layers over a substrate.
- a bottom electrode is formed within at least one of the insulating layers.
- a via is defined by etching through at least one of the insulating layers above the bottom electrode.
- the via and bottom electrode are separated by at least one intermediate insulating layer.
- a sacrificial spacer is formed in the via above the intermediate insulating layer.
- a channel with a smaller diameter than the diameter of the via is defined within the sacrificial spacer walls.
- a pore is created in the intermediate insulating layer below the sacrificial spacer and above the bottom electrode such that the channel continues through the intermediate insulating layer to the bottom electrode.
- the sacrificial spacer is then removed and phase change material is deposited into the pore, filling the entire pore. Finally, an upper electrode is deposited above the phase change material.
- the memory cell includes a substrate, an insulating layer formed over the substrate, a bottom electrode formed within the insulating layer, a pore in the insulating layer above the bottom electrode, phase change material formed within the pore, with the phase change material filling the entire pore, and an upper electrode formed above the phase change material.
- Another exemplary aspect of the present invention is an integrated circuit comprising one or more memory cells with at least one of the memory cells comprising a substrate, an insulating layer formed over the substrate, a bottom electrode formed within the insulating layer, a pore in the insulating layer above the bottom electrode, phase change material formed within the pore, with the phase change material filling the entire pore, and an upper electrode formed above the phase change material. Additionally, the upper electrode may be patterned for bit line connections.
- FIG. 1 is a cross sectional view of a memory cell of the present invention.
- FIG. 2 is a cross sectional view of a FEOL wafer with insulating layers.
- FIG. 3 is a cross sectional view of the creation of a via and undercut in the insulating layers.
- FIG. 4 is a cross sectional view illustrating the deposition of insulating material into the via.
- FIG. 5 is a cross sectional view of the creation of a sacrificial spacer.
- FIG. 6 is a cross sectional view of the creation of a pore.
- FIGS. 7A and 7B are cross sectional views illustrating the removal of the insulating layer(s).
- FIGS. 8A and 8B are cross sectional views illustrating the deposition of phase change material and an upper electrode.
- FIGS. 1-8 When referring to the figures, like structures and elements shown throughout are indicated with like reference numerals.
- FIG. 1 illustrates the cross sectional view of an exemplary memory cell 102 contemplated by the present invention.
- the exemplary memory cell 102 is comprised of an insulating layer 104 , a bottom electrode 106 , an intermediate insulating layer 108 , a pore 114 within the intermediate insulating layer that contains phase change material 110 , and an upper electrode 112 .
- the memory cell 102 is typically formed on a substrate with metal-oxide-semiconductor field-effect transistors (MOSFETs) (not shown).
- MOSFETs metal-oxide-semiconductor field-effect transistors
- Other switching devices known to those skilled in the art, such as junction FETs and bipolar junction transistors, may be used with the present invention.
- FIG. 2 an exemplary embodiment of a starting front end of line (FEOL) wafer with insulating layer depositions is shown.
- the exemplary FEOL wafer is comprised of the insulating layer 104 .
- the insulating layer 104 may be composed of, but not limited to, silicon dioxide (SiO 2 ).
- the bottom electrode 106 may be, but is not limited to, titanium nitride (TiN), tungsten (W), silver (Ag), gold (Au), or aluminum (Al).
- the thickness of the insulating layer 104 and the bottom electrode 106 is greater than 50 nm.
- the dimension of the bottom electrode is such that its diameter is larger than the diameter of the pore 114 (see FIG. 1 ) plus tolerance for overlay so that adequate electrical contact is made.
- the diameter of the bottom electrode 106 is at least 80 nm.
- Insulating layers disposed above the starting FEOL wafers are the intermediate insulating layer 108 , a silicon dioxide layer 202 , and an upper insulating layer 204 .
- the intermediate insulating layer 108 may be comprised of, but not limited to, silicon nitride (SiN x ).
- the silicon dioxide layer 202 may also be comprised of, but not limited to, amorphous silicon/polysilicon (Si), or any material which can be removed selectively to the intermediate insulating layer 108 .
- the upper insulating layer 204 may also be comprised of silicon nitride.
- the insulating materials, SiO 2 and SiN x can be formed in one plasma enhanced chemical vapor deposition (PECVD) chamber sequentially or formed separately.
- PECVD plasma enhanced chemical vapor deposition
- the intermediate insulating layer 108 is approximately 30 nm thick, the silicon dioxide layer 202 approximately 250 nm thick, and the upper insulating layer 204 is approximately 30 nm.
- substitute insulating materials may be used for the insulating layer 104 with the present invention, such silicon oxycarbide (SiOC).
- the intermediate insulating layer 108 and upper insulating layer 204 may also be comprised of alternate insulating materials.
- An example of alternate insulating materials would be the aforementioned SiO 2 and SiN x , aluminum oxide (Al 2 O 3 ), tantalum pentoxide (Ta 2 O 5 ), etc.
- the SiO2 layer 202 may be comprised of polysilicon/amorphous silicon
- the wafer is comprised of a silicon dioxide insulating layer 104 , a bottom electrode 106 , an intermediate insulating layer 108 , a silicon dioxide layer 202 , and an upper insulating layer 204 .
- the bottom electrode 106 may be, but is not limited to, titanium nitride or tungsten.
- the intermediate insulating layer 108 may be comprised of, but not limited to, SiN x .
- the silicon dioxide layer 202 may be comprised of, but not limited to, silicon dioxide and may containany material which can be removed selectively to the intermediate insulating layer.
- the upper insulating layer 204 may be comprised of, but not limited to, silicon nitride.
- a via 302 is etched into the silicon dioxide layer 202 and upper insulating layer 204 .
- the via 302 stops at the intermediate insulating layer 108 .
- Defining the via 302 can be performed by first forming a lithography mask with photo resist (not shown) above the upper insulating layer 204 and the silicon layer 202 .
- the photo resist is pattern so that the area above the bottom electrode 106 is exposed to the proceeding etch.
- the etch can then be performed using an anisotropic reactive-ion etch (RIE) process.
- RIE anisotropic reactive-ion etch
- the undercut 304 can be formed by performing a dilute HF wet etch where the HF attacks the silicon dioxide more rapidly than the silicon nitride or amorphous silicon.
- the via 302 is approximately 200 nm in diameter and 250 nm in height.
- the undercut amount 304 is approximately 15 nm per side.
- FIG. 4 illustrates the deposition of a conformal insulating layer 402 and a cavity 404 formed therein.
- amorphous silicon is used as the conformal insulating layer 402 .
- the conformal insulating layer 402 can be deposited by chemical vapor deposition (CVD).
- the thickness of the conformal insulating layer 402 should be greater than the radius of the via 302 in order to create the cavity 404 therein.
- the size of the undercut 304 in the silicon dioxide layer 202 correlates to the size of the cavity 404 formed within the conformal insulating layer 402 .
- the diameter of the cavity 404 is approximately twice the size of the undercut 304 of the silicon dioxide layer 202 .
- a 30 nm undercut creates a 60 nm diameter cavity 404 .
- the diameter of the cavity 404 will be independent of the diameter of the via 302 , providing that the silicon dioxide layer thickness 202 is greater than or equal to a minimum value H min .
- this value can be represented by equation 1 and describes the point at which the cavity dimension is below the triangular pinch-off.
- H min is the silicon dioxide layer thickness 202 , ⁇ the size of the undercut 304 (half the cavity diameter) and r the radius of the via 302 .
- the diameter of the cavity 404 can be modulated by the profile of the via 302 . Specifically, if a controlled taper angle is present in the via, the cavity diameter will decrease according to equation 2, where ⁇ is the effective size of the reduction.
- a sacrificial spacer 502 is defined by anisotropic selective reactive-ion etch. The etch removes all of the conformal insulating material above and below the cavity 404 (see FIG. 4 ) and stops on intermediate insulating layer 108 . Additionally, the etch removes the upper insulating layer 204 (see FIG. 4 ). A channel 504 is created within the sacrificial spacer 502 during this process. The channel allows further etching to be concentrated onto a small region of the intermediate insulating layer 108 above the bottom electrode 106 .
- FIG. 6 shows the process step for defining the pore 114 .
- Defining the pore 114 in the intermediate insulating layer 108 may be performed by a selective and anisotropic reactive ion etch process (to maintain the sacrificial spacer critical dimension) or by aphosphoric acid wet etch (if dimension is not critical).
- the phosphoric acid etches the channel 504 within the sacrificial spacer 502 into the intermediate insulating layer 108 , stopping at the bottom electrode 106 . Consequently, if a phosphoric acid wet etch is used, the upper insulating layer 204 is also removed.
- the resulting radius of the pore 114 is that of the channel 504 and substantially smaller than that of the via 302 (see FIG.
- the pore radius is substantially uniform throughout.
- the height of the pore 114 created is that of the thickness of the intermediate insulating layer 108 .
- the surface of the pore 114 is substantially planar and perpendicular to the side surfaces of the intermediate insulating layer 108 .
- the pore 114 is approximately 30 nm in diameter and 30 nm in height.
- FIG. 7A Illustrated in FIG. 7A is the removal of the sacrificial spacer 502 (see FIG. 6 ) and the silicon dioxide layer 202 .
- dilute HF is used to etch the silicon dioxide layer 202 .
- the sacrificial spacer 502 is etched with dilute potassium hydroxide (KOH).
- KOH is used to etch the amorphous silicon from the sacrificial spacer 502 .
- Dilute HF is used to etch the SiO 2 from the silicon dioxide layer 202 .
- the remaining surface is that of the intermediate insulating layer and that of the top surface of the bottom electrode 106 at the bottom of the pore 114 .
- CMP chemical mechanical polish
- the silicon dioxide layer 202 is retained. KOH is used to remove the sacrificial spacer 502 and the dilute HF step is omitted. A channel 202 H is created within the silicon dioxide layer 202 .
- the phase change material 110 is deposited above the intermediate insulating layer 108 and filling the entirety of the pore 114 .
- the phase change material 110 can be comprised of a chalcogenide. Chalcogenides are comprised of a chalcogen (Periodic Table Group 16/Group VIA) and a more electropositive element. An example of phase change materials would be GeSb and SbTe.
- An upper electrode 112 is then formed above the phase change material 110 .
- the upper electrode 112 may be comprised of, but not limited to, silver (Ag), gold (Au), tungsten (W), or aluminum (Al).
- a phase change region 116 is a region of the phase change material 110 that changes phases.
- the remaining phase change material 110 above the intermediate insulating layer 108 acts as a conductive passage for an electrical current. This current runs from the bottom electrode 106 , to the phase change region 116 , through the phase change material 110 and up to the upper electrode 112 . It is contemplated that the phase change material 110 and the upper electrode 112 above the intermediate insulating layer 108 and away of the pore 114 may be removed with CMP.
- the phase change material 110 A is deposited into the channel 202 H, within the silicon dioxide layer 202 , and into the pore 114 .
- the phase change material 110 A fills the entirety of the channel 202 H and pore 114 .
- the phase change material within the pore is the phase change region 116 .
- the phase change material 110 A does not require additional etching as explained below.
- phase change material 110 of the completed memory cell 102 above the intermediate insulating layer 108 and the upper electrode 112 are patterned for bit line connections. This may be accomplished by forming a lithography mask with photo resist, performing a reactive-ion etch on the regions exposed with the mask, and then stripping the photo resist from the memory cell 102 .
- a Reactive Ion Etching or Ion Milling process can be used to etch the upper electrode 112 and phase-change material 110 .
- an electrical pulse is applied beginning at the bottom electrode 106 , to phase change region 116 , into the phase change material 110 above the intermediate insulating layer 108 , and finally up to the upper electrode 112 .
- Ohmic heating created by the resistance heats the phase change material 110 in the phase change region 116 and changes its resistive properties.
- a short, strong electrical pulse causes the phase change region 116 to heat and cool quickly resulting in an amorphous phase.
- a long, weaker electrical pulse causes the phase change region 116 to heat and cool slowly, thereby allowing the phase change region 116 to crystallize.
- the amorphous and crystalline phases exhibit, respectively, higher and lower resistive properties.
- the stored data can be retrieved by reading the resistance of a particular cell with an electrical pulse that is either too weak or too short to alter the phase in the phase change region 116 .
- the manufacture of an integrate circuit of cells is achieved by producing the cells in an array so that rows and columns are formed. These cells are then linked together at the FET gates in the MOSFET creating a “word” line.
- the wiring, used also as the upper electrode 112 is linked together perpendicular to the FET gate linkage creating a “bit” line. This allows each cell to be read or programmed individually by mapping its “word” and “bit” line coordinates.
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Priority Applications (4)
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US11/620,671 US20080164453A1 (en) | 2007-01-07 | 2007-01-07 | Uniform critical dimension size pore for pcram application |
TW097100423A TWI462160B (zh) | 2007-01-07 | 2008-01-04 | 用於相變化隨機存取記憶體之相同關鍵尺寸的孔洞 |
CN200810001978A CN100587994C (zh) | 2007-01-07 | 2008-01-04 | 存储单元及其制造方法 |
US14/174,777 US9166165B2 (en) | 2007-01-07 | 2014-02-06 | Uniform critical dimension size pore for PCRAM application |
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US11/620,671 US20080164453A1 (en) | 2007-01-07 | 2007-01-07 | Uniform critical dimension size pore for pcram application |
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US14/174,777 Division US9166165B2 (en) | 2007-01-07 | 2014-02-06 | Uniform critical dimension size pore for PCRAM application |
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US14/174,777 Active US9166165B2 (en) | 2007-01-07 | 2014-02-06 | Uniform critical dimension size pore for PCRAM application |
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Cited By (79)
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US20090001337A1 (en) * | 2007-06-29 | 2009-01-01 | Toshiharu Furukawa | Phase Change Memory Cell with Vertical Transistor |
US20090230375A1 (en) * | 2008-03-17 | 2009-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase Change Memory Device |
US7688619B2 (en) | 2005-11-28 | 2010-03-30 | Macronix International Co., Ltd. | Phase change memory cell and manufacturing method |
US7701750B2 (en) | 2008-05-08 | 2010-04-20 | Macronix International Co., Ltd. | Phase change device having two or more substantial amorphous regions in high resistance state |
US7719913B2 (en) | 2008-09-12 | 2010-05-18 | Macronix International Co., Ltd. | Sensing circuit for PCRAM applications |
US7741636B2 (en) | 2006-01-09 | 2010-06-22 | Macronix International Co., Ltd. | Programmable resistive RAM and manufacturing method |
US7749854B2 (en) | 2006-12-06 | 2010-07-06 | Macronix International Co., Ltd. | Method for making a self-converged memory material element for memory cell |
US7777215B2 (en) | 2007-07-20 | 2010-08-17 | Macronix International Co., Ltd. | Resistive memory structure with buffer layer |
US7786461B2 (en) | 2007-04-03 | 2010-08-31 | Macronix International Co., Ltd. | Memory structure with reduced-size memory element between memory material portions |
US7786460B2 (en) | 2005-11-15 | 2010-08-31 | Macronix International Co., Ltd. | Phase change memory device and manufacturing method |
US7785920B2 (en) | 2006-07-12 | 2010-08-31 | Macronix International Co., Ltd. | Method for making a pillar-type phase change memory element |
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US9166165B2 (en) | 2015-10-20 |
CN100587994C (zh) | 2010-02-03 |
TWI462160B (zh) | 2014-11-21 |
US20140154862A1 (en) | 2014-06-05 |
TW200845154A (en) | 2008-11-16 |
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