US20040227447A1 - Field emission display using carbon nanotubes and methods of making the same - Google Patents
Field emission display using carbon nanotubes and methods of making the same Download PDFInfo
- Publication number
- US20040227447A1 US20040227447A1 US10/765,623 US76562304A US2004227447A1 US 20040227447 A1 US20040227447 A1 US 20040227447A1 US 76562304 A US76562304 A US 76562304A US 2004227447 A1 US2004227447 A1 US 2004227447A1
- Authority
- US
- United States
- Prior art keywords
- carbon nanotubes
- substrate
- holes
- recited
- data processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
Definitions
- the present invention relates in general to field emission display devices, and in particular, to the use of carbon nanotubes as field emitters in display applications.
- Carbon nanotubes can be manufactured in volume having different dimensions (length and diameter), including single shell (single wall) or multiple shells (multiple walls).
- a typical method mixes carbon nanotubes with an adhesive and then screen prints the mixture. This method has a lot of problems with the directionality of the nanotubes, their density in the adhesive material, and the resultant resolution of the display.
- a triode structure must be built that is not obvious to be realized using such a screen printing method.
- FIG. 1 illustrates a substrate with embossed holes and carbon nanotubes deposited therein
- FIG. 2 illustrates a substrate with embossed holes and carbon nanotubes deposited therein, wherein a metal layer has been added within the substrate;
- FIG. 3 illustrates a display device configured in accordance with the present invention
- FIG. 4 illustrates a top view of holes embossed within a substrate
- FIG. 5 illustrates a data processing system configured in accordance with the present invention
- FIG. 6 illustrates a flow diagram of a method for making a display device in accordance with an embodiment of the present invention.
- the present invention utilizes embossed microstructures within a substrate, such as illustrated in FIG. 4.
- FIG. 4 shows such embossed microstructure holes within a material.
- Embossing may utilize a metal die and counter along with heat and pressure to reshape the surface of a material (paper, plastic, metal, wood, etc.). The result is a three-dimensional design which creates a sense of depth and contrast. This is sometimes referred to as “stamping,” but a roller can also emboss an image in a surface. Embossing raises an image or design out of the surface. Debossing (lowering) an image in the surface is another method used to achieve attractive visual effects.
- the embossing can have different shapes and sizes, but for this disclosure, it will be assumed that such holes are round.
- embossing techniques one can obtain a density of round openings of four or five holes in each ten micrometers, and the depth can be from very shallow to as deep as 20 to 30 micrometers.
- the length of the carbon nanotubes in coordination with the diameter of the opening and the depth, one can use a number of techniques that exploit the long and narrow shapes of the carbon nanotubes to be inserted into the embossed holes in such a way that all nanotubes in a hole will be more or less parallel to the long axis of the hole.
- FIG. 1 illustrates the result of such a process.
- a substrate 100 which could be plastic, metal, semiconductor, glass, or any other type of solid material, has holes 102 embossed therein, and carbon nanotubes 101 have been deposited within each of the holes 102 .
- a number of techniques can be utilized to direct the carbon nanotubes 101 into the embossed holes 102 . For example: shaking, vibrations, carbon nanotubes in a solution, spraying, electrophoresis, magnetic fields, electric fields, etc.
- a film of carbon nanotubes can be deposited over the embossed holes 102 . Then, via shaking or vibration of the substrate 100 , the long carbon nanotubes 101 will fall into the holes 102 lengthwise.
- the carbon nanotubes 201 can thereafter be fixed in the holes 202 with a solution 204 that partially fills each hole 202 .
- the carbon nanotubes within each of the holes can then be cross-linked, for example by utilizing ultra violet energy, heat, or other means.
- FIG. 2 also illustrates how to make a field emission cathode using such a technique.
- a metal layer 203 is deposited on top of a substrate 200 .
- a dielectric material 205 is deposited on the metal layer 203 , and holes 202 are embossed within the dielectric substrate 205 .
- the carbon nanotubes 201 are deposited within each of the holes 202 so that they come in physical contact with the metal layer 203 .
- a material 204 can be used to fix the carbon nanotubes 201 within each of the holes 202 .
- a conductive gate layer 301 can then be deposited on the structure shown in FIG. 2, and an anode 302 comprising a substrate 303 , an indium tin oxide (ITO) layer 304 and a phosphor 305 , can be positioned over the cathode.
- An electric field can be created between the cathode and the anode by connecting a voltage potential between the ITO layer 304 and the conductive layer 203 .
- Emission from carbon nanotubes 201 within selected holes 202 can then be accomplished by varying a threshold voltage between the ITO layer 304 and the gate electrode 301 .
- Matrix addressable structure commonly known in the field emission art, such as perpendicular addressable anode and cathode (or grid) electrodes, can be utilized to cause electron emission from carbon nanotubes within very specific areas, resulting in the creation of addressable pixels.
- FIG. 5 illustrates an exemplary hardware configuration of data processing system 513 in accordance with the subject invention having central processing unit (CPU) 510 , such as a conventional microprocessor, and a number of other units interconnected via system bus 512 .
- CPU central processing unit
- FIG. 5 illustrates an exemplary hardware configuration of data processing system 513 in accordance with the subject invention having central processing unit (CPU) 510 , such as a conventional microprocessor, and a number of other units interconnected via system bus 512 .
- CPU central processing unit
- Data processing system 513 includes random access memory (RAM) 514 , read only memory (ROM) 516 , and input/output (I/O) adapter 518 for connecting peripheral devices such as disk units 520 and tape drives 540 to bus 512 , user interface adapter 522 for connecting keyboard 524 , mouse 526 , and/or other user interface devices such as a touch screen device (not shown) to bus 512 , communication adapter 534 for connecting data processing system 513 to a data processing network, and display adapter 536 for connecting bus 512 to display device 538 .
- CPU 510 may include other circuitry not shown herein, which will include circuitry commonly found within a microprocessor, e.g., execution unit, bus interface unit, arithmetic logic unit, etc. CPU 510 may also reside on a single integrated circuit.
- Display device 538 may be a field emission display according to the present invention.
- step 601 a mixture of carbon nanotubes is made, such as a solution or film of carbon nanotubes that can then be deposited over the embossed holes in step 602 .
- step 603 the carbon nanotubes are then caused to fall into the embossed holes, such as by shaking or vibrating the substrate with the embossed holes.
- step 604 the carbon nanotubes are affixed within each of their respective holes.
Abstract
Embossed microstructures within a substrate are used to create narrow and deep holes within that substrate. A carbon nanotube solution or mixture is then deposited over this substrate with the embossed holes. Shaking or vibrating the substrate will then cause the carbon nanotubes to fall into each of the holes in such a way that all of the nanotubes within a hole will be substantially parallel to the long axis of the hole. This structure can then be combined with a gate electrode and an anode to create a field emission display device.
Description
- The present invention relates in general to field emission display devices, and in particular, to the use of carbon nanotubes as field emitters in display applications.
- Carbon nanotubes can be manufactured in volume having different dimensions (length and diameter), including single shell (single wall) or multiple shells (multiple walls). In order to make a display utilizing carbon nanotubes, one needs to possess a low cost process inducible to high volume manufacturing. To date, a typical method mixes carbon nanotubes with an adhesive and then screen prints the mixture. This method has a lot of problems with the directionality of the nanotubes, their density in the adhesive material, and the resultant resolution of the display. Furthermore, in order to make a display, a triode structure must be built that is not obvious to be realized using such a screen printing method.
- For a more complete understanding of the present invention, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
- FIG. 1 illustrates a substrate with embossed holes and carbon nanotubes deposited therein;
- FIG. 2 illustrates a substrate with embossed holes and carbon nanotubes deposited therein, wherein a metal layer has been added within the substrate;
- FIG. 3 illustrates a display device configured in accordance with the present invention;
- FIG. 4 illustrates a top view of holes embossed within a substrate;
- FIG. 5 illustrates a data processing system configured in accordance with the present invention; and
- FIG. 6 illustrates a flow diagram of a method for making a display device in accordance with an embodiment of the present invention.
- In the following description, numerous specific details are set forth such as specific substrate materials to provide a thorough understanding of the present invention. However, it will be obvious to those skilled in the art that the present invention may be practiced without such specific details. In other instances, well-known circuits have been shown in block diagram form in order not to obscure the present invention in unnecessary detail. For the most part, details concerning timing considerations and the like have been omitted in as much as such details are not necessary to obtain a complete understanding of the present invention and are within the skills of persons of ordinary skill in the relevant art.
- Refer now to the drawings wherein depicted elements are not necessarily shown to scale and wherein like or similar elements are designated by the same reference numeral through the several views.
- The present invention utilizes embossed microstructures within a substrate, such as illustrated in FIG. 4. FIG. 4 shows such embossed microstructure holes within a material. Embossing may utilize a metal die and counter along with heat and pressure to reshape the surface of a material (paper, plastic, metal, wood, etc.). The result is a three-dimensional design which creates a sense of depth and contrast. This is sometimes referred to as “stamping,” but a roller can also emboss an image in a surface. Embossing raises an image or design out of the surface. Debossing (lowering) an image in the surface is another method used to achieve attractive visual effects. The embossing can have different shapes and sizes, but for this disclosure, it will be assumed that such holes are round. Using embossing techniques, one can obtain a density of round openings of four or five holes in each ten micrometers, and the depth can be from very shallow to as deep as 20 to 30 micrometers. By properly selecting the length of the carbon nanotubes in coordination with the diameter of the opening and the depth, one can use a number of techniques that exploit the long and narrow shapes of the carbon nanotubes to be inserted into the embossed holes in such a way that all nanotubes in a hole will be more or less parallel to the long axis of the hole.
- FIG. 1 illustrates the result of such a process. A
substrate 100, which could be plastic, metal, semiconductor, glass, or any other type of solid material, hasholes 102 embossed therein, andcarbon nanotubes 101 have been deposited within each of theholes 102. A number of techniques can be utilized to direct thecarbon nanotubes 101 into the embossedholes 102. For example: shaking, vibrations, carbon nanotubes in a solution, spraying, electrophoresis, magnetic fields, electric fields, etc. For example, a film of carbon nanotubes can be deposited over the embossedholes 102. Then, via shaking or vibration of thesubstrate 100, thelong carbon nanotubes 101 will fall into theholes 102 lengthwise. - Referring to FIG. 2, the
carbon nanotubes 201 can thereafter be fixed in theholes 202 with asolution 204 that partially fills eachhole 202. The carbon nanotubes within each of the holes can then be cross-linked, for example by utilizing ultra violet energy, heat, or other means. - FIG. 2 also illustrates how to make a field emission cathode using such a technique. On top of a
substrate 200, ametal layer 203 is deposited. Then adielectric material 205 is deposited on themetal layer 203, andholes 202 are embossed within thedielectric substrate 205. Thecarbon nanotubes 201 are deposited within each of theholes 202 so that they come in physical contact with themetal layer 203. Amaterial 204 can be used to fix thecarbon nanotubes 201 within each of theholes 202. - Referring to FIG. 3, a
conductive gate layer 301 can then be deposited on the structure shown in FIG. 2, and ananode 302 comprising asubstrate 303, an indium tin oxide (ITO)layer 304 and aphosphor 305, can be positioned over the cathode. An electric field can be created between the cathode and the anode by connecting a voltage potential between theITO layer 304 and theconductive layer 203. Emission fromcarbon nanotubes 201 within selectedholes 202 can then be accomplished by varying a threshold voltage between theITO layer 304 and thegate electrode 301. Matrix addressable structure, commonly known in the field emission art, such as perpendicular addressable anode and cathode (or grid) electrodes, can be utilized to cause electron emission from carbon nanotubes within very specific areas, resulting in the creation of addressable pixels. - It should be noted that all of the processes described herein can be performed at room temperature, which is advantageous over many techniques within the prior art for making field emission display devices.
- A representative hardware environment for practicing the present invention is depicted in FIG. 5, which illustrates an exemplary hardware configuration of
data processing system 513 in accordance with the subject invention having central processing unit (CPU) 510, such as a conventional microprocessor, and a number of other units interconnected viasystem bus 512.Data processing system 513 includes random access memory (RAM) 514, read only memory (ROM) 516, and input/output (I/O)adapter 518 for connecting peripheral devices such asdisk units 520 andtape drives 540 tobus 512,user interface adapter 522 for connectingkeyboard 524,mouse 526, and/or other user interface devices such as a touch screen device (not shown) tobus 512,communication adapter 534 for connectingdata processing system 513 to a data processing network, anddisplay adapter 536 for connectingbus 512 to displaydevice 538.CPU 510 may include other circuitry not shown herein, which will include circuitry commonly found within a microprocessor, e.g., execution unit, bus interface unit, arithmetic logic unit, etc.CPU 510 may also reside on a single integrated circuit.Display device 538 may be a field emission display according to the present invention. - Referring to FIG. 6, there is illustrated a process for making a cathode structure such as the one illustrated in FIGS. 2 and 3. In
step 601, a mixture of carbon nanotubes is made, such as a solution or film of carbon nanotubes that can then be deposited over the embossed holes instep 602. Instep 603, the carbon nanotubes are then caused to fall into the embossed holes, such as by shaking or vibrating the substrate with the embossed holes. And then instep 604, the carbon nanotubes are affixed within each of their respective holes. - Although the present invention and its advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (18)
1. (original) an apparatus comprising:
a substrate with holes embossed therein; and
carbon nanotubes deposited in the holes.
2. The apparatus as recited in claim 1 , further comprising:
a conductive layer within the substrate electrically connecting at least a portion of the carbon nanotubes within a plurality of the holes.
3. The apparatus as recited in claim 2 , further comprising:
a gate electrode coextensive with the substrate.
4. The apparatus as recited in claim 2 , a material for affixing the carbon nanotubes within the holes.
5. The apparatus as recited in claim 3 , further comprising:
an anode positioned a distance from the substrate, having a phosphor for emitting photons in response to bombardment from electrons emitted by the carbon nanotubes.
6. The apparatus as recited in claim 5 , further comprising:
circuitry for causing the electrons to be emitted by the carbon nanotubes.
7. A data processing system comprising:
a processor;
a memory device;
a storage device;
an input device;
a display device; and
a bus system for coupling the processor to the memory device, the storage device, the input device, and the display device, wherein the display device further comprises:
a substrate with holes embossed therein; and
carbon nanotubes deposited in the holes.
8. The data processing system as recited in claim 7 , further comprising:
a conductive layer within the substrate electrically connecting at least a portion of the carbon nanotubes within a plurality of the holes.
9. The data processing system as recited in claim 8 , further comprising:
a gate electrode coextensive with the substrate.
10. The data processing system as recited in claim 8 , further comprising:
a gate electrode coextensive with the substrate.
11. The data processing system as recited in claim 9 , further comprising:
an anode positioned a distance from the substrate, having a phosphor for emitting photons in response to bombardment from electrons emitted by the carbon nanotubes.
12. The data processing system as recited in claim 11 , further comprising:
circuitry for causing the electrons to be emitted by the carbon nanotubes.
13. (cancelled)
14. (cancelled)
15. (cancelled)
16. (cancelled)
17. (cancelled)
18. (cancelled)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/765,623 US20040227447A1 (en) | 2001-06-07 | 2004-01-27 | Field emission display using carbon nanotubes and methods of making the same |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US29665901P | 2001-06-07 | 2001-06-07 | |
US10/164,530 US6739932B2 (en) | 2001-06-07 | 2002-06-06 | Field emission display using carbon nanotubes and methods of making the same |
US10/765,623 US20040227447A1 (en) | 2001-06-07 | 2004-01-27 | Field emission display using carbon nanotubes and methods of making the same |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/164,530 Division US6739932B2 (en) | 2001-06-07 | 2002-06-06 | Field emission display using carbon nanotubes and methods of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20040227447A1 true US20040227447A1 (en) | 2004-11-18 |
Family
ID=26860648
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/164,530 Expired - Lifetime US6739932B2 (en) | 2001-06-07 | 2002-06-06 | Field emission display using carbon nanotubes and methods of making the same |
US10/765,623 Abandoned US20040227447A1 (en) | 2001-06-07 | 2004-01-27 | Field emission display using carbon nanotubes and methods of making the same |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/164,530 Expired - Lifetime US6739932B2 (en) | 2001-06-07 | 2002-06-06 | Field emission display using carbon nanotubes and methods of making the same |
Country Status (1)
Country | Link |
---|---|
US (2) | US6739932B2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040183032A1 (en) * | 2001-10-03 | 2004-09-23 | Nano-Proprietary, Inc. | Large area electron source |
US20070099336A1 (en) * | 2005-10-31 | 2007-05-03 | Weston Donald F | Plasma etch process for defining catalyst pads on nanoemissive displays |
US20070138129A1 (en) * | 2005-12-20 | 2007-06-21 | Hon Hai Precision Industry Co., Ltd. | Method for manufacturing field emission cathode |
US20080128397A1 (en) * | 2006-11-06 | 2008-06-05 | Unidym, Inc. | Laser patterning of nanostructure-films |
US20090127712A1 (en) * | 2004-11-04 | 2009-05-21 | Koninklijke Philips Electronics N.V. | Nanotube-based directionally-conductive adhesive |
US20120107465A1 (en) * | 2010-11-03 | 2012-05-03 | 4Wind Science And Engineering, Llc | Electron flow generation |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7449081B2 (en) * | 2000-06-21 | 2008-11-11 | E. I. Du Pont De Nemours And Company | Process for improving the emission of electron field emitters |
JP2006510179A (en) * | 2002-12-13 | 2006-03-23 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Field emission devices and methods for making such devices |
US7112920B2 (en) * | 2003-04-21 | 2006-09-26 | National instutute of advanced industrial science and technology | Field emission source with plural emitters in an opening |
TWI231521B (en) * | 2003-09-25 | 2005-04-21 | Ind Tech Res Inst | A carbon nanotubes field emission display and the fabricating method of which |
TWI248106B (en) * | 2003-11-19 | 2006-01-21 | Canon Kk | Method for aligning needle-like substances and alignment unit |
US7834530B2 (en) * | 2004-05-27 | 2010-11-16 | California Institute Of Technology | Carbon nanotube high-current-density field emitters |
WO2006085993A2 (en) * | 2004-07-16 | 2006-08-17 | The Trustees Of Boston College | Device and method for achieving enhanced field emission utilizing nanostructures grown on a conductive substrate |
US20060082272A1 (en) * | 2004-09-24 | 2006-04-20 | Ki-Jung Kim | Plasma display apparatus |
US20080012461A1 (en) * | 2004-11-09 | 2008-01-17 | Nano-Proprietary, Inc. | Carbon nanotube cold cathode |
EP1874986B1 (en) * | 2005-04-25 | 2013-01-23 | Smoltek AB | Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same |
CN101189372B (en) * | 2005-04-25 | 2012-05-23 | 斯莫特克有限公司 | Controlled growth of a nanostructure on a substrate, and electron emission devices based on the same |
KR101386268B1 (en) * | 2005-08-26 | 2014-04-17 | 스몰텍 에이비 | Interconnects and heat dissipators based on nanostructures |
US7777291B2 (en) | 2005-08-26 | 2010-08-17 | Smoltek Ab | Integrated circuits having interconnects and heat dissipators based on nanostructures |
CN101093771A (en) * | 2006-06-23 | 2007-12-26 | 清华大学 | Field emission body of Nano carbon tube, and preparation method |
SG140485A1 (en) * | 2006-08-24 | 2008-03-28 | Sony Corp | An electron emitter and a display apparatus utilising the same |
JP5535915B2 (en) | 2007-09-12 | 2014-07-02 | スモルテック アーベー | Connection and bonding of adjacent layers by nanostructures |
US7479590B1 (en) * | 2008-01-03 | 2009-01-20 | International Business Machines Corporation | Dry adhesives, methods of manufacture thereof and articles comprising the same |
CN102007571B (en) * | 2008-02-25 | 2016-01-20 | 斯莫特克有限公司 | Conduction in nanostructure manufacture process helps the deposition of layer and selectivity to remove |
CN102064063B (en) | 2010-12-24 | 2012-08-29 | 清华大学 | Field-emission cathode device and preparation method thereof |
EP3933881A1 (en) | 2020-06-30 | 2022-01-05 | VEC Imaging GmbH & Co. KG | X-ray source with multiple grids |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6019656A (en) * | 1997-11-29 | 2000-02-01 | Electronics And Telecommunications Research Institute | Method of fabricating a field emission device by using carbon nano-tubes |
US6097138A (en) * | 1996-09-18 | 2000-08-01 | Kabushiki Kaisha Toshiba | Field emission cold-cathode device |
US6312303B1 (en) * | 1999-07-19 | 2001-11-06 | Si Diamond Technology, Inc. | Alignment of carbon nanotubes |
US6653366B1 (en) * | 1999-01-11 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Carbon ink, electron-emitting element, method for manufacturing an electron-emitting element and image display device |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6489A (en) * | 1849-06-05 | Brake eor carriages | ||
GB1394055A (en) * | 1971-07-09 | 1975-05-14 | Nat Res Dev | Electron emitters |
DE2810736A1 (en) * | 1978-03-13 | 1979-09-27 | Max Planck Gesellschaft | FIELD EMISSION CATHODE AND MANUFACTURING METHOD AND USE FOR IT |
US4728851A (en) * | 1982-01-08 | 1988-03-01 | Ford Motor Company | Field emitter device with gated memory |
JPS58216327A (en) | 1982-06-11 | 1983-12-16 | Hitachi Ltd | Field emission cathode |
DE4326232A1 (en) * | 1993-08-05 | 1995-02-09 | Roehm Gmbh | Plastic composites made of incompatible plastics |
DE4405768A1 (en) * | 1994-02-23 | 1995-08-24 | Till Keesmann | Field emission cathode device and method for its manufacture |
US5704820A (en) * | 1995-01-31 | 1998-01-06 | Lucent Technologies Inc. | Method for making improved pillar structure for field emission devices |
FR2738392B1 (en) * | 1995-08-31 | 1997-11-14 | Corning Inc | METHOD FOR MANUFACTURING A PLASMA DISPLAY SCREEN |
US6538801B2 (en) * | 1996-07-19 | 2003-03-25 | E Ink Corporation | Electrophoretic displays using nanoparticles |
JP3412406B2 (en) | 1996-08-02 | 2003-06-03 | 双葉電子工業株式会社 | Fluorescent display |
US6020677A (en) | 1996-11-13 | 2000-02-01 | E. I. Du Pont De Nemours And Company | Carbon cone and carbon whisker field emitters |
JP3568345B2 (en) | 1997-01-16 | 2004-09-22 | 株式会社リコー | Electron generator |
JPH10221309A (en) | 1997-02-10 | 1998-08-21 | Kajima Corp | Determining method of welded part, measuring method of unwelded part, and inspecting device of the welded part |
EP1361592B1 (en) * | 1997-09-30 | 2006-05-24 | Noritake Co., Ltd. | Method of manufacturing an electron-emitting source |
JPH11111161A (en) | 1997-10-02 | 1999-04-23 | Ise Electronics Corp | Manufacture of fluorescent character display device |
JP3655447B2 (en) | 1997-10-29 | 2005-06-02 | 株式会社ノリタケカンパニーリミテド | Fluorescent display device and manufacturing method thereof |
JP3740295B2 (en) | 1997-10-30 | 2006-02-01 | キヤノン株式会社 | Carbon nanotube device, manufacturing method thereof, and electron-emitting device |
JP3828270B2 (en) | 1998-03-05 | 2006-10-04 | 株式会社ノリタケカンパニーリミテド | Electron emission device |
JP3730391B2 (en) | 1998-03-09 | 2006-01-05 | 株式会社ノリタケカンパニーリミテド | Method for manufacturing fluorescent display device |
JP3902883B2 (en) | 1998-03-27 | 2007-04-11 | キヤノン株式会社 | Nanostructure and manufacturing method thereof |
JPH11297245A (en) | 1998-04-10 | 1999-10-29 | Ise Electronics Corp | Flat display |
JP3790044B2 (en) | 1998-05-12 | 2006-06-28 | 株式会社ノリタケカンパニーリミテド | Fluorescent display device |
JP3790045B2 (en) | 1998-05-13 | 2006-06-28 | 株式会社ノリタケカンパニーリミテド | Fluorescent display device and manufacturing method thereof |
WO1999066523A1 (en) | 1998-06-18 | 1999-12-23 | Matsushita Electric Industrial Co., Ltd. | Electron emitting device, electron emitting source, image display, and method for producing them |
US6140759A (en) * | 1998-07-17 | 2000-10-31 | Sarnoff Corporation | Embossed plasma display back panel |
US6265466B1 (en) * | 1999-02-12 | 2001-07-24 | Eikos, Inc. | Electromagnetic shielding composite comprising nanotubes |
US6648711B1 (en) | 1999-06-16 | 2003-11-18 | Iljin Nanotech Co., Ltd. | Field emitter having carbon nanotube film, method of fabricating the same, and field emission display device using the field emitter |
JP2001052652A (en) | 1999-06-18 | 2001-02-23 | Cheol Jin Lee | White light source and its manufacture |
KR100312694B1 (en) * | 1999-07-16 | 2001-11-03 | 김순택 | Fed having a carbon nanotube film as emitters |
EP1073090A3 (en) | 1999-07-27 | 2003-04-16 | Iljin Nanotech Co., Ltd. | Field emission display device using carbon nanotubes and manufacturing method thereof |
US6359383B1 (en) * | 1999-08-19 | 2002-03-19 | Industrial Technology Research Institute | Field emission display device equipped with nanotube emitters and method for fabricating |
EP1102298A1 (en) | 1999-11-05 | 2001-05-23 | Iljin Nanotech Co., Ltd. | Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof |
EP1102299A1 (en) | 1999-11-05 | 2001-05-23 | Iljin Nanotech Co., Ltd. | Field emission display device using vertically-aligned carbon nanotubes and manufacturing method thereof |
KR100490527B1 (en) * | 2000-02-07 | 2005-05-17 | 삼성에스디아이 주식회사 | Secondary electron amplification structure applying carbon nanotube and plasma display panel and back light using the same |
JP2002025425A (en) * | 2000-07-07 | 2002-01-25 | Hitachi Ltd | Electron emitter, its manufacturing method and electron beam device |
US6545422B1 (en) * | 2000-10-27 | 2003-04-08 | Science Applications International Corporation | Socket for use with a micro-component in a light-emitting panel |
-
2002
- 2002-06-06 US US10/164,530 patent/US6739932B2/en not_active Expired - Lifetime
-
2004
- 2004-01-27 US US10/765,623 patent/US20040227447A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097138A (en) * | 1996-09-18 | 2000-08-01 | Kabushiki Kaisha Toshiba | Field emission cold-cathode device |
US6019656A (en) * | 1997-11-29 | 2000-02-01 | Electronics And Telecommunications Research Institute | Method of fabricating a field emission device by using carbon nano-tubes |
US6653366B1 (en) * | 1999-01-11 | 2003-11-25 | Matsushita Electric Industrial Co., Ltd. | Carbon ink, electron-emitting element, method for manufacturing an electron-emitting element and image display device |
US6312303B1 (en) * | 1999-07-19 | 2001-11-06 | Si Diamond Technology, Inc. | Alignment of carbon nanotubes |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040183032A1 (en) * | 2001-10-03 | 2004-09-23 | Nano-Proprietary, Inc. | Large area electron source |
US7078716B2 (en) * | 2001-10-03 | 2006-07-18 | Nano-Proprietary, Inc. | Large area electron source |
US20090127712A1 (en) * | 2004-11-04 | 2009-05-21 | Koninklijke Philips Electronics N.V. | Nanotube-based directionally-conductive adhesive |
US8399982B2 (en) * | 2004-11-04 | 2013-03-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nanotube-based directionally-conductive adhesive |
US20070099336A1 (en) * | 2005-10-31 | 2007-05-03 | Weston Donald F | Plasma etch process for defining catalyst pads on nanoemissive displays |
US7413924B2 (en) | 2005-10-31 | 2008-08-19 | Motorola, Inc. | Plasma etch process for defining catalyst pads on nanoemissive displays |
US20070138129A1 (en) * | 2005-12-20 | 2007-06-21 | Hon Hai Precision Industry Co., Ltd. | Method for manufacturing field emission cathode |
US7799374B2 (en) * | 2005-12-20 | 2010-09-21 | Hon Hai Precision Industry Co., Ltd. | Method for manufacturing field emission cathode |
US20080128397A1 (en) * | 2006-11-06 | 2008-06-05 | Unidym, Inc. | Laser patterning of nanostructure-films |
US8178028B2 (en) * | 2006-11-06 | 2012-05-15 | Samsung Electronics Co., Ltd. | Laser patterning of nanostructure-films |
US20120107465A1 (en) * | 2010-11-03 | 2012-05-03 | 4Wind Science And Engineering, Llc | Electron flow generation |
US9204665B2 (en) * | 2010-11-03 | 2015-12-08 | Cattien Van Nguyen | Electron flow generation |
Also Published As
Publication number | Publication date |
---|---|
US20020185949A1 (en) | 2002-12-12 |
US6739932B2 (en) | 2004-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20040227447A1 (en) | Field emission display using carbon nanotubes and methods of making the same | |
US6531828B2 (en) | Alignment of carbon nanotubes | |
KR960008919A (en) | Field emission device, manufacturing method thereof and panel display device | |
JP2656851B2 (en) | Image display device | |
US6777869B2 (en) | Transparent emissive display | |
KR960012180A (en) | An electron emission device and a method of manufacturing the same; an electron source and an image generating device including the device; | |
TW200912854A (en) | Addressable or static light emitting or electronic apparatus | |
EP1283541B1 (en) | Method of fabricating field emission display employing carbon nanotubes | |
TW295673B (en) | ||
KR920013581A (en) | Flat panel display and manufacturing method | |
US8054530B2 (en) | E-paper panel | |
US7101243B2 (en) | Field emitter cathode backplate structures for display panels | |
US6210246B1 (en) | Method for making an electron source with microtips, with self-aligned focusing grid | |
JP2006108070A (en) | Electron emission display device and its manufacturing method | |
US6107732A (en) | Inhibiting edge emission for an addressable field emission thin film flat cathode display | |
US6310432B1 (en) | Surface treatment process used in growing a carbon film | |
US6580211B1 (en) | Triode assembly for carbon cold cathode | |
US6803716B1 (en) | Vacuum fluorescent display | |
JP3484226B2 (en) | Flat discharge light emitting device | |
JP2005116417A (en) | Manufacturing method of field emission cold-cathode device, field emission cold-cathode device, light-emitting device and display device | |
CA1249120A (en) | Display panel and method of making it | |
KR100194052B1 (en) | FED spacer and its manufacturing method | |
JPS597995A (en) | Integrated gas discharge display panel | |
TW200511354A (en) | Image display device | |
WO2004003955A1 (en) | Cold cathode structure, electron emission device, and electron emission type display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: NANO-PROPRIETARY, INC., TEXAS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:YANIV, ZVI;FINK, RICHARD LEE;REEL/FRAME:020490/0212 Effective date: 20020604 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- AFTER EXAMINER'S ANSWER OR BOARD OF APPEALS DECISION |