SG140485A1 - An electron emitter and a display apparatus utilising the same - Google Patents

An electron emitter and a display apparatus utilising the same

Info

Publication number
SG140485A1
SG140485A1 SG200605692-3A SG2006056923A SG140485A1 SG 140485 A1 SG140485 A1 SG 140485A1 SG 2006056923 A SG2006056923 A SG 2006056923A SG 140485 A1 SG140485 A1 SG 140485A1
Authority
SG
Singapore
Prior art keywords
same
electron emitter
display apparatus
electron
pore
Prior art date
Application number
SG200605692-3A
Inventor
Takehisa Ishida
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to SG200605692-3A priority Critical patent/SG140485A1/en
Priority to US11/892,251 priority patent/US7999453B2/en
Priority to JP2007218988A priority patent/JP2008091324A/en
Publication of SG140485A1 publication Critical patent/SG140485A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Abstract

AN ELECTRON EMITTER AND A DISPLAY APPARATUS UTILISING THE SAME A field effect electron emitting apparatus is disclosed comprising an insulating layer having an array of pores, each pore has at least one nano- wire electron emitter which is shorter than the pore and / or each pore may have a plurality of nano-wire electron emitters. A method of manufacturing a electron emitting array is also disclosed. The field effect electron emitting apparatus may be used in a display.
SG200605692-3A 2006-08-24 2006-08-24 An electron emitter and a display apparatus utilising the same SG140485A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG200605692-3A SG140485A1 (en) 2006-08-24 2006-08-24 An electron emitter and a display apparatus utilising the same
US11/892,251 US7999453B2 (en) 2006-08-24 2007-08-21 Electron emitter and a display apparatus utilizing the same
JP2007218988A JP2008091324A (en) 2006-08-24 2007-08-24 Electron emitter and display apparatus utilizing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200605692-3A SG140485A1 (en) 2006-08-24 2006-08-24 An electron emitter and a display apparatus utilising the same

Publications (1)

Publication Number Publication Date
SG140485A1 true SG140485A1 (en) 2008-03-28

Family

ID=39187850

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200605692-3A SG140485A1 (en) 2006-08-24 2006-08-24 An electron emitter and a display apparatus utilising the same

Country Status (3)

Country Link
US (1) US7999453B2 (en)
JP (1) JP2008091324A (en)
SG (1) SG140485A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100721020B1 (en) * 2006-01-20 2007-05-23 삼성전자주식회사 Semiconductor devices including contact structure and methods of formimg the same
CN103107054B (en) * 2010-05-20 2015-07-01 清华大学 Field emission device
CN101894725B (en) * 2010-07-09 2011-12-14 清华大学 Ion source
CN102087947B (en) * 2010-12-29 2013-04-24 清华大学 Field-emission electronic device
US9064669B2 (en) * 2013-07-15 2015-06-23 National Defense University Field emission cathode and field emission light using the same
JP6617368B2 (en) * 2015-06-08 2019-12-11 国立研究開発法人理化学研究所 How to make an electron source
US10424455B2 (en) * 2017-07-22 2019-09-24 Modern Electron, LLC Suspended grid structures for electrodes in vacuum electronics
US10811212B2 (en) 2017-07-22 2020-10-20 Modern Electron, LLC Suspended grid structures for electrodes in vacuum electronics
JP6605553B2 (en) * 2017-09-11 2019-11-13 シャープ株式会社 Electron emitting device, method for manufacturing the same, and method for manufacturing the electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010077687A (en) * 2000-02-07 2001-08-20 김순택 Field emission display using secondary electron amplification structure
US20020185949A1 (en) * 2001-06-07 2002-12-12 Si Diamond Technology, Inc. Field emission display using carbon nanotubes and methods of making the same
US20060054879A1 (en) * 2002-08-23 2006-03-16 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3745402A (en) * 1971-12-17 1973-07-10 J Shelton Field effect electron emitter
US3840955A (en) * 1973-12-12 1974-10-15 J Hagood Method for producing a field effect control device
JP3007654B2 (en) * 1990-05-31 2000-02-07 株式会社リコー Method for manufacturing electron-emitting device
GB9416754D0 (en) * 1994-08-18 1994-10-12 Isis Innovation Field emitter structures
US20050276743A1 (en) * 2004-01-13 2005-12-15 Jeff Lacombe Method for fabrication of porous metal templates and growth of carbon nanotubes and utilization thereof
US7470353B2 (en) 2004-08-30 2008-12-30 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing field emitter electrode using self-assembling carbon nanotubes and field emitter electrode manufactured thereby
US7279085B2 (en) * 2005-07-19 2007-10-09 General Electric Company Gated nanorod field emitter structures and associated methods of fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010077687A (en) * 2000-02-07 2001-08-20 김순택 Field emission display using secondary electron amplification structure
US20020185949A1 (en) * 2001-06-07 2002-12-12 Si Diamond Technology, Inc. Field emission display using carbon nanotubes and methods of making the same
US20060054879A1 (en) * 2002-08-23 2006-03-16 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same

Also Published As

Publication number Publication date
US7999453B2 (en) 2011-08-16
JP2008091324A (en) 2008-04-17
US20080067912A1 (en) 2008-03-20

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