UA96952C2 - УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ - Google Patents

УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ

Info

Publication number
UA96952C2
UA96952C2 UAA200902529A UAA200902529A UA96952C2 UA 96952 C2 UA96952 C2 UA 96952C2 UA A200902529 A UAA200902529 A UA A200902529A UA A200902529 A UAA200902529 A UA A200902529A UA 96952 C2 UA96952 C2 UA 96952C2
Authority
UA
Ukraine
Prior art keywords
sapphire single
production
wafer
plate
single crystal
Prior art date
Application number
UAA200902529A
Other languages
English (en)
Ukrainian (uk)
Inventor
Витали Татартченко
Кристофер Д. Джонс
Стивен А. Занелла
Джон В. Лочер
Фери Пранади
Original Assignee
Сейнт-Гобейн Серамикс Энд Пластикс, Инк.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Сейнт-Гобейн Серамикс Энд Пластикс, Инк. filed Critical Сейнт-Гобейн Серамикс Энд Пластикс, Инк.
Publication of UA96952C2 publication Critical patent/UA96952C2/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/23907—Pile or nap type surface or component
    • Y10T428/23986—With coating, impregnation, or bond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Предложен способ и устройство для изготовления монокристалла сапфира, ориентированного в С-плоскости. Такой способ и устройство могут использовать методику выращивания профильного кристалла с ограничением края и подпиткой расплава для получения монокристаллического материала, который демонстрирует низкую поликристалличность и/или низкую плотность дислокационных дефектов.
UAA200902529A 2006-09-22 2007-09-21 УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ UA96952C2 (ru)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US82672306P 2006-09-22 2006-09-22

Publications (1)

Publication Number Publication Date
UA96952C2 true UA96952C2 (ru) 2011-12-26

Family

ID=38819679

Family Applications (1)

Application Number Title Priority Date Filing Date
UAA200902529A UA96952C2 (ru) 2006-09-22 2007-09-21 УСТРОЙСТВО И СПОСОБ ПОЛУЧЕНИЯ монокристаллов сапфира, пластина, пластинка и монокристалл сапфира, ориентированная в С-ПЛОСКОСТИ

Country Status (12)

Country Link
US (3) US8652658B2 (ru)
EP (1) EP2082081B1 (ru)
JP (1) JP5702931B2 (ru)
KR (5) KR101225470B1 (ru)
CN (2) CN102965729A (ru)
AU (1) AU2007299677B2 (ru)
CA (1) CA2663382C (ru)
MX (1) MX2009003120A (ru)
RU (1) RU2436875C2 (ru)
TW (2) TWI472652B (ru)
UA (1) UA96952C2 (ru)
WO (1) WO2008036888A1 (ru)

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Also Published As

Publication number Publication date
TWI472652B (zh) 2015-02-11
US8652658B2 (en) 2014-02-18
KR20110134935A (ko) 2011-12-15
KR101230279B1 (ko) 2013-02-06
KR20090055644A (ko) 2009-06-02
JP5702931B2 (ja) 2015-04-15
KR20110093922A (ko) 2011-08-18
KR101298965B1 (ko) 2013-08-23
CN101522961B (zh) 2013-04-10
TW201200644A (en) 2012-01-01
WO2008036888A1 (en) 2008-03-27
KR101353277B1 (ko) 2014-01-22
AU2007299677A1 (en) 2008-03-27
KR101498520B1 (ko) 2015-03-04
CA2663382C (en) 2012-04-24
KR20130016410A (ko) 2013-02-14
TWI388700B (zh) 2013-03-11
US20140116323A1 (en) 2014-05-01
CN101522961A (zh) 2009-09-02
TW200827500A (en) 2008-07-01
AU2007299677B2 (en) 2011-05-12
US20170226659A1 (en) 2017-08-10
KR20130016409A (ko) 2013-02-14
EP2082081A1 (en) 2009-07-29
RU2009114547A (ru) 2010-10-27
JP2010504274A (ja) 2010-02-12
RU2436875C2 (ru) 2011-12-20
CN102965729A (zh) 2013-03-13
MX2009003120A (es) 2009-04-06
KR101225470B1 (ko) 2013-01-24
CA2663382A1 (en) 2008-03-27
EP2082081B1 (en) 2015-05-06
US20080075941A1 (en) 2008-03-27

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