TWI819623B - Carrier attachment mechanism of plasma process system - Google Patents
Carrier attachment mechanism of plasma process system Download PDFInfo
- Publication number
- TWI819623B TWI819623B TW111119216A TW111119216A TWI819623B TW I819623 B TWI819623 B TW I819623B TW 111119216 A TW111119216 A TW 111119216A TW 111119216 A TW111119216 A TW 111119216A TW I819623 B TWI819623 B TW I819623B
- Authority
- TW
- Taiwan
- Prior art keywords
- areas
- electrode plate
- plasma processing
- additional
- processing system
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 230000008569 process Effects 0.000 title claims abstract description 43
- 230000007246 mechanism Effects 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000017525 heat dissipation Effects 0.000 claims abstract description 16
- 238000001179 sorption measurement Methods 0.000 claims description 84
- 238000012545 processing Methods 0.000 claims description 39
- 238000000605 extraction Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000012809 cooling fluid Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 4
- 239000003463 adsorbent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Abstract
Description
本申請係有關一種吸附機構，特別是指一種電漿製程系統的載體吸附機構。The present application relates to an adsorption mechanism, in particular to a carrier adsorption mechanism of a plasma process system.
隨著時代的變遷，科技產業也日益進步，尤其半導體產業更是越發成熟。而晶片及電路載板的製作過程中，需要對待製程物進行表面清潔、蝕刻處理等製程，除了利用一般熟知的乾蝕刻、濕蝕刻技術之外，電漿製程技術亦在半導體及電路板產業佔有一席之地。As the times change, the technology industry is also improving day by day, especially the semiconductor industry is becoming more mature. In the manufacturing process of wafers and circuit carrier boards, it is necessary to perform surface cleaning, etching and other processes on the objects to be processed. In addition to the commonly known dry etching and wet etching technologies, plasma process technology also plays an important role in the semiconductor and circuit board industries. a place.
其中，於電漿製程中，由於電路載板會因為熱因素而發生翹曲的情況，因此電路載板通常都是以夾持以及拉撐的方式固定於電漿製程腔體內，以此防止電路載板產生翹曲。然而，傳統夾持跟拉撐是連動的動作，因此容易發生夾持過緊無法拉開的情況，或是拉開力道大於夾持力道而產生滑移問題，使得電路載板在電漿製程中並無法確實的被固定於電漿製程腔體內，電路載板仍然會產生翹曲的情況，進而導致電路載板的製程良率下降的問題。Among them, during the plasma process, since the circuit carrier board will warp due to thermal factors, the circuit carrier board is usually fixed in the plasma process chamber by clamping and stretching to prevent the circuit board from warping. The carrier board is warped. However, traditional clamping and stretching are linked actions, so it is easy to clamp too tightly to pull apart, or the pulling force is greater than the clamping force, causing slipping problems, causing the circuit carrier board to slip during the plasma process. It cannot be reliably fixed in the plasma process chamber, and the circuit carrier board will still warp, which will lead to a decrease in the process yield of the circuit carrier board.
本申請之主要目的，在於解決以往電路載板因為電漿製程中的熱因素而產生翹曲的情況，而導致電路載板的製程良率下降的問題。The main purpose of this application is to solve the problem of the previous circuit carrier board warping due to thermal factors in the plasma process, which resulted in a decrease in the process yield of the circuit carrier board.
為達上述目的，本申請一項實施例提供一種電漿製程系統的載體吸附機構，其設於一真空電漿製程腔體內並用於對一待製程基板進行電漿製程，真空電漿製程腔體內設有一第一電極，載體吸附機構包含一與第一電極對應設置的第二電極板及至少一吸附件。第二電極板與第一電極之間形成一電漿製程空間，第二電極板相鄰電漿製程空間之一表面具有一附加區及一外露區；至少一吸附件設於附加區，至少一吸附件吸附待製程基板以使待製程基板固定於第二電極板上。In order to achieve the above purpose, one embodiment of the present application provides a carrier adsorption mechanism of a plasma processing system, which is disposed in a vacuum plasma processing chamber and used to perform plasma processing on a substrate to be processed. In the vacuum plasma processing chamber A first electrode is provided, and the carrier adsorption mechanism includes a second electrode plate corresponding to the first electrode and at least one adsorption member. A plasma process space is formed between the second electrode plate and the first electrode, and a surface of the second electrode plate adjacent to the plasma process space has an additional area and an exposed area; at least one adsorption member is provided in the additional area, and at least one The adsorption member adsorbs the substrate to be processed so that the substrate to be processed is fixed on the second electrode plate.
於本申請另一實施例中，附加區、外露區及吸附件各具有複數個，且附加區與外露區為間隔排列形成於第二電極板之表面。In another embodiment of the present application, there are a plurality of additional areas, exposed areas and adsorbing members, and the additional areas and the exposed areas are spaced apart and formed on the surface of the second electrode plate.
於本申請另一實施例中，附加區與外露區為長條形，且於第二電極板之表面呈條紋狀排列。In another embodiment of the present application, the additional areas and the exposed areas are elongated and arranged in stripes on the surface of the second electrode plate.
於本申請另一實施例中，附加區與外露區為方形，且於第二電極板之表面呈陣列狀排列。In another embodiment of the present application, the additional area and the exposed area are square, and are arranged in an array on the surface of the second electrode plate.
於本申請另一實施例中，各附加區更包括有一連接段，任兩對角相鄰的附加區透過連接段彼此相連。In another embodiment of the present application, each additional area further includes a connecting section, and any two diagonally adjacent additional areas are connected to each other through the connecting section.
於本申請另一實施例中，吸附件之形狀對應於兩相連的附加區，並包含連接段之區域。In another embodiment of the present application, the shape of the adsorbent member corresponds to two connected additional areas and includes the area of the connecting section.
於本申請另一實施例中，各附加區更包括有一連接段，任兩對角相鄰的附加區透過連接段彼此相連，連接彼此的兩附加區不與其他附加區相連。In another embodiment of the present application, each additional area further includes a connecting section. Any two diagonally adjacent additional areas are connected to each other through the connecting section. The two additional areas connecting each other are not connected to other additional areas.
於本申請另一實施例中，連接彼此的兩附加區與其他附加區之間的最小間隔介於0.01mm至1mm。In another embodiment of the present application, the minimum distance between two additional areas connected to each other and other additional areas is between 0.01 mm and 1 mm.
於本申請另一實施例中，吸附件之形狀對應於兩相連的附加區，並包含連接段之區域。In another embodiment of the present application, the shape of the adsorbent member corresponds to two connected additional areas and includes the area of the connecting section.
於本申請另一實施例中，外露區於第二電極板之表面呈田字形排列，而使附加區呈矩形。In another embodiment of the present application, the exposed areas are arranged in a field shape on the surface of the second electrode plate, so that the additional areas are rectangular.
於本申請另一實施例中，外露區係自田字形排列更進一步的延伸出對角線外露出，而使附加區呈三角形。In another embodiment of the present application, the exposed area is further extended from the Tian-shaped arrangement to be exposed diagonally, so that the additional area is triangular.
於本申請另一實施例中，附加區與外露區對應於第二電極板之形狀並於第二電極板之表面呈同心排列。In another embodiment of the present application, the additional area and the exposed area correspond to the shape of the second electrode plate and are concentrically arranged on the surface of the second electrode plate.
於本申請另一實施例中，第二電極板更具有設於外露區的至少一輸氣口及至少一抽氣口，至少一抽氣口之位置相對遠離至少一輸氣口之位置，至少一輸氣口輸入一散熱氣體至外露區，並由至少一抽氣口將散熱氣體從外露區抽出。In another embodiment of the present application, the second electrode plate further has at least one air delivery port and at least one air extraction port located in the exposed area. The at least one air extraction port is located relatively far away from the at least one air delivery port. The at least one air delivery port The air port inputs a heat dissipation gas to the exposed area, and at least one air extraction port extracts the heat dissipation gas from the exposed area.
於本申請另一實施例中，附加區凹陷於第二電極板之表面，使外露區相對凸出附加區，並使貼附有吸附件之附加區的高度高於外露區0.01mm至0.6mm。In another embodiment of the present application, the additional area is recessed on the surface of the second electrode plate, so that the exposed area relatively protrudes from the additional area, and the height of the additional area with the adsorption member attached is 0.01mm to 0.6mm higher than the exposed area. .
於本申請另一實施例中，第二電極板為一中空板體結構而使第二電極板內部具有一通有冷卻流體之冷卻通道。In another embodiment of the present application, the second electrode plate has a hollow plate structure and has a cooling channel inside the second electrode plate that passes the cooling fluid.
於本申請另一實施例中，更包括有一限位單元，其設於第二電極板相鄰第一電極之一側，並使待製程基板被夾設於限位單元及第二電極板之間，限位單元為中間鏤空之框體形狀，並夾制固定待製程基板之外周緣。In another embodiment of the present application, a limiting unit is further included, which is disposed on one side of the second electrode plate adjacent to the first electrode, so that the substrate to be processed is sandwiched between the limiting unit and the second electrode plate. During the process, the limiting unit is in the shape of a frame with a hollow center, and clamps and fixes the outer periphery of the substrate to be processed.
於本申請另一實施例中，限位單元之材質為絕緣材質。In another embodiment of the present application, the material of the limiting unit is an insulating material.
藉此，本申請透過吸附件的高吸附力將待製程基板吸附定位於第二電極板上，並透過限位單元進一步的限制待製程基板的位置，以此有效的防止待製程基板在電漿製程中發生翹曲的情況。In this way, the present application uses the high adsorption force of the adsorption member to adsorb and position the substrate to be processed on the second electrode plate, and further limits the position of the substrate to be processed through the limiting unit, thereby effectively preventing the substrate to be processed from being absorbed by the plasma. Warpage occurs during the manufacturing process.
為便於說明本申請於上述創作內容一欄中所表示的中心思想，茲以具體實施例表達。實施例中各種不同物件係按適於列舉說明之比例，而非按實際元件的比例予以繪製，合先敘明。In order to facilitate the explanation of the central idea expressed in the above creative content column of the present application, specific embodiments are used. Various objects in the embodiments are drawn according to proportions suitable for enumeration and description, rather than according to the proportions of actual components, and will be described first.
請參閱圖1至圖11所示，係揭示本申請實施例之電漿製程系統的載體吸附機構100，其設於一真空電漿製程腔體1內並用於對一待製程基板200進行電漿製程，真空電漿製程腔體1內設有一第一電極300，載體吸附機構100設於第一電極300之一側，載體吸附機構100包含一第二電極板10以及至少一吸附件20。其中，待製程基板200可以是電路複合載板（例如PCB、FPC等）、晶圓或晶片等，凡指需要進行電漿清潔、蝕刻、鍍膜製程的物體都可為本案所請敘述的待製程基板200。Please refer to FIGS. 1 to 11 , which illustrate the carrier adsorption mechanism 100 of the plasma processing system according to the embodiment of the present application. During the process, a first electrode 300 is disposed in the vacuum plasma process chamber 1. The carrier adsorption mechanism 100 is disposed on one side of the first electrode 300. The carrier adsorption mechanism 100 includes a second electrode plate 10 and at least one adsorption member 20. Among them, the substrate to be processed 200 can be a circuit composite carrier (such as PCB, FPC, etc.), a wafer or a wafer, etc. Any object that requires plasma cleaning, etching, and coating processes can be a process to be described in this case. Substrate 200.
第二電極板10，其係對應第一電極300設置並位於第一電極300之一側，第二電極板10與第一電極300之間形成有一電漿製程空間400，待製程基板200係於電漿製程空間400內進行電漿製程，第二電極板10相鄰電漿製程空間400之表面具有一附加區11及一外露區12。其中，於本申請實施例中，附加區11及外露區12係為複數個，附加區11與外露區12為間隔排列於第二電極板10之表面。The second electrode plate 10 is arranged corresponding to the first electrode 300 and is located on one side of the first electrode 300. A plasma processing space 400 is formed between the second electrode plate 10 and the first electrode 300, and the substrate 200 to be processed is located therein. The plasma process is performed in the plasma process space 400 , and the surface of the second electrode plate 10 adjacent to the plasma process space 400 has an additional area 11 and an exposed area 12 . Among them, in the embodiment of the present application, there are a plurality of additional areas 11 and exposed areas 12 , and the additional areas 11 and the exposed areas 12 are arranged at intervals on the surface of the second electrode plate 10 .
至少一吸附件20，其設於附加區11，吸附件20吸附待製程基板200以使待製程基板200固定於第二電極板10上，讓待製程基板200在進行電漿製程的過程中，不會任意移位並防止待製程基板200產生翹曲的情況。其中，吸附件20係透過靜電吸附方式或矽膠吸附方式吸附待製程基板200，但不限於此。At least one adsorption member 20 is provided in the additional area 11. The adsorption member 20 adsorbs the substrate to be processed 200 so that the substrate to be processed 200 is fixed on the second electrode plate 10, so that the substrate to be processed 200 is during the plasma process. It will not shift arbitrarily and prevent the substrate 200 to be processed from warping. The adsorption member 20 adsorbs the substrate to be processed 200 through electrostatic adsorption or silicone adsorption, but is not limited thereto.
更進一步的，吸附件20包括有一吸附層21及一黏貼層22，吸附層21設於吸附件20靠近第一電極300之一側，黏貼層22設於吸附件20遠離第一電極300之另一側。吸附件20係透過黏貼層22黏設於附加區11；吸附層21係透過靜電吸附方式或黏膠吸附方式吸附待製程基板200，本案所請主要在於能夠不另用額外電力，而能重複吸貼的材料皆為本案之範圍。進一步舉例來說，靜電吸附方式可利用PVC材質的靜電膜，而於一片體表面形成厚度約0.15mm的膜體；黏膠吸附方式則主要利用聚氨酯(PU)、矽膠材質或壓敏膠材質(例如雙面黏性不同的雙面膠)，目的在於形成片狀可重複黏貼的材料。以上僅為舉例說明，並不以此為限。Furthermore, the adsorption member 20 includes an adsorption layer 21 and an adhesive layer 22. The adsorption layer 21 is disposed on one side of the adsorption member 20 close to the first electrode 300, and the adhesion layer 22 is disposed on the other side of the adsorption member 20 away from the first electrode 300. one side. The adsorption piece 20 is adhered to the additional area 11 through the adhesive layer 22; the adsorption layer 21 adsorbs the substrate to be processed 200 through electrostatic adsorption or adhesive adsorption. The main purpose of this case is that it can be repeatedly adsorbed without using additional electricity. The materials posted are all within the scope of this case. For further example, the electrostatic adsorption method can use an electrostatic film made of PVC to form a film with a thickness of about 0.15mm on the surface of a piece; the adhesive adsorption method mainly uses polyurethane (PU), silicone material or pressure-sensitive adhesive material ( For example, double-sided tape with different viscosity on both sides) is intended to form a sheet-like material that can be pasted repeatedly. The above are only examples and are not limited thereto.
另外，本申請之載體吸附機構100更包含有一限位單元30，限位單元30設於第二電極板10相鄰第一電極300之一側，並使待製程基板200被夾設於限位單元30及第二電極板10之間，以此進一步的防止待製程基板200產生翹曲的情況。其中，如圖1及圖4所示，限位單元30為中間鏤空之框體形狀，並藉由第二電極板10而於待製程基板200之一側邊緣進行加壓，以此進一步的防止待製程基板200遇熱而呈翹曲狀。更進一步的，限位單元30之材質為絕緣材質，因此限位單元30在待製程基板200進行電漿製程時，限位單元30並不會因為電漿製程中的熱因素而發生變形的情況，所以限位單元30能夠在不影響待製程基板200之製程狀況下，進一步的防止待製程基板200產生翹曲的情況。In addition, the carrier adsorption mechanism 100 of the present application further includes a limiting unit 30. The limiting unit 30 is disposed on one side of the second electrode plate 10 adjacent to the first electrode 300, and the substrate to be processed 200 is clamped in the limiting position. between the unit 30 and the second electrode plate 10 to further prevent the substrate 200 to be processed from warping. As shown in FIGS. 1 and 4 , the limiting unit 30 is in the shape of a frame with a hollow center, and is pressurized by the second electrode plate 10 on one side edge of the substrate to be processed 200 to further prevent The substrate 200 to be processed becomes warped when exposed to heat. Furthermore, the material of the limiting unit 30 is an insulating material. Therefore, when the limiting unit 30 is undergoing a plasma process on the substrate 200 to be processed, the limiting unit 30 will not be deformed due to thermal factors in the plasma process. , so the limiting unit 30 can further prevent the substrate to be processed 200 from warping without affecting the process conditions of the substrate to be processed 200 .
如圖2所示，並請同時參閱圖4，係為本申請之第一實施例，於此實施例中，附加區11、外露區12及吸附件20各具有複數個，且附加區11與外露區12為間隔排列形成於第二電極板10之表面。更進一步的，附加區11與外露區12為長條形，且附加區11與外露區12於第二電極板10之表面呈條紋狀排列。As shown in Figure 2, please also refer to Figure 4, which is the first embodiment of the present application. In this embodiment, there are multiple additional areas 11, exposed areas 12 and adsorbing parts 20, and the additional areas 11 and The exposed areas 12 are spaced apart and formed on the surface of the second electrode plate 10 . Furthermore, the additional areas 11 and the exposed areas 12 are elongated, and the additional areas 11 and the exposed areas 12 are arranged in a stripe shape on the surface of the second electrode plate 10 .
如圖3至圖7所示，係為本申請之第二實施例，於此實施例中，附加區11與外露區12為方形，且附加區11與外露區12於第二電極板10之表面呈陣列狀排列，其中，各附加區11包括有一連接段111，任兩對角相鄰的附加區11透過連接段111彼此相連，且連接彼此的兩附加區11不與其他附加區11相連。As shown in FIGS. 3 to 7 , it is a second embodiment of the present application. In this embodiment, the additional area 11 and the exposed area 12 are square, and the additional area 11 and the exposed area 12 are between the second electrode plate 10 The surface is arranged in an array, in which each additional area 11 includes a connecting section 111. Any two diagonally adjacent additional areas 11 are connected to each other through the connecting section 111, and the two additional areas 11 connected to each other are not connected to other additional areas 11. .
如圖5及圖6所示，於本申請第二實施例中，附加區11係凹陷於第二電極板10之表面，使外露區12相對凸出附加區11，而吸附件20於貼附於附加區11後，因為吸附件20亦具有厚度之關係，使得貼附有吸附件20後之附加區11整體與外露區12之間具有一高度差，其中，貼附有吸附件20之附加區11的高度高於外露區12的高度，且所述高度差介於0.01mm至0.6mm；連接彼此的兩附加區11與其他附加區11之間具有一間隔D，間隔D介於0.01mm至1mm；吸附件20之形狀對應於附加區11之形狀，而於本實施例中，吸附件20並未形成於連接段111上，因此使得連接段111形成凹陷區域，使用者可透過凹陷區域的連接段111方便進一步移除並更換吸附件20。As shown in FIGS. 5 and 6 , in the second embodiment of the present application, the additional area 11 is recessed on the surface of the second electrode plate 10 , so that the exposed area 12 relatively protrudes from the additional area 11 , and the adsorption member 20 is attached After the additional area 11, because the adsorption member 20 also has a thickness, there is a height difference between the entire additional area 11 after the adsorption member 20 is attached and the exposed area 12. Among them, the additional area with the adsorption member 20 is attached. The height of the area 11 is higher than the height of the exposed area 12, and the height difference is between 0.01mm and 0.6mm; there is an interval D between the two additional areas 11 connected to each other and other additional areas 11, and the interval D is between 0.01mm to 1 mm; the shape of the adsorbing part 20 corresponds to the shape of the additional area 11, and in this embodiment, the adsorbing part 20 is not formed on the connecting section 111, so that the connecting section 111 forms a recessed area, and the user can pass through the recessed area The connecting section 111 facilitates further removal and replacement of the adsorption member 20 .
如圖5及圖6所示，於本申請第二實施例中，第二電極板10具有設於外露區12的至少一輸氣口121及至少一抽氣口122，抽氣口122之位置相對遠離輸氣口121之位置，輸氣口121連接於一儲氣模組(圖中未示)，輸氣口121從所述儲氣模組輸入一散熱氣體至外露區12，並由抽氣口122將所述散熱氣體從外露區12抽出，以此透過所述散熱氣體的流動，將電漿製程所產生的熱能帶出外露區12，達到加強散熱效率之功效。As shown in FIGS. 5 and 6 , in the second embodiment of the present application, the second electrode plate 10 has at least one air delivery port 121 and at least one air extraction port 122 located in the exposed area 12 , and the air extraction port 122 is located relatively far away. The position of the gas delivery port 121 is connected to a gas storage module (not shown in the figure). The gas delivery port 121 inputs a heat dissipation gas from the gas storage module to the exposed area 12 and is pumped through the air extraction port 122 The heat dissipation gas is extracted from the exposed area 12, so that the heat energy generated by the plasma process is brought out of the exposed area 12 through the flow of the heat dissipation gas, thereby enhancing the heat dissipation efficiency.
其中，由於貼附有吸附件20之附加區11與外露區12之間具有所述高度差，且連接彼此的兩附加區11與其他附加區11之間具有間隔D，使得散熱氣體能夠流通各外露區12之間，將電漿製程所產生的熱能帶出外露區12。另外，為了強調所述散熱氣體能夠於外露區12流動，圖6之待製程基板200以及外露區12與待製程基板200間的距離並未按實際比例予以繪製，實際上，外露區12與待製程基板200間的距離非常小(可能僅約0.01mm至0.6mm，上述尺寸非限制距離範圍，僅為舉例說明)。Among them, because there is the height difference between the additional area 11 and the exposed area 12 where the adsorbent 20 is attached, and there is a gap D between the two additional areas 11 connected to each other and other additional areas 11, so that the heat dissipation gas can flow through each other. Between the exposed areas 12, the heat energy generated by the plasma process is brought out of the exposed areas 12. In addition, in order to emphasize that the heat dissipation gas can flow in the exposed area 12, the substrate 200 to be processed and the distance between the exposed area 12 and the substrate 200 to be processed in FIG. The distance between the process substrates 200 is very small (perhaps only about 0.01 mm to 0.6 mm. The above size does not limit the distance range and is only an example).
如圖7所示，於本申請第二實施例中，第二電極板10為一中空板體結構而使第二電極板10內部具有一通有冷卻流體之冷卻通道13，藉此，在待製程基板200進行電漿製程時，冷卻通道13能夠透過冷卻流體的流動，將第二電極板10上的熱能帶走，以此達到加強散熱效率之功效。更進一步的，如圖7所示，冷卻通道13能夠配合附加區11及外露區12的形狀而呈蜿蜒狀，靠近外露區12的表面，以此更進一步的提高散熱效率。As shown in FIG. 7 , in the second embodiment of the present application, the second electrode plate 10 has a hollow plate structure and has a cooling channel 13 inside the second electrode plate 10 that passes cooling fluid. Thereby, during the process to be processed, When the substrate 200 undergoes a plasma process, the cooling channels 13 can take away the heat energy on the second electrode plate 10 through the flow of cooling fluid, thereby enhancing the heat dissipation efficiency. Furthermore, as shown in FIG. 7 , the cooling channel 13 can be meandering in accordance with the shapes of the additional area 11 and the exposed area 12 , and be close to the surface of the exposed area 12 , thereby further improving the heat dissipation efficiency.
如圖8所示，並請同時參閱圖4，係為本申請之第三實施例，其與第二實施例的不同之處在於，吸附件20之形狀係對應於附加區11之形狀，且吸附件20之黏貼區域包含連接段111之區域，增加吸附件20的置入或移除效率。另外，於本申請其他實施例中，連接彼此的兩附加區11亦能夠與其他附加區11相連，以此使吸附件20於第二電極板10之表面呈長條狀連接，使用者僅需將吸附件20的一端拉起，便能夠將連接一串的吸附件20一起移除，因此可更快速的將吸附件20黏設於第二電極板10之表面或是從第二電極板10之表面移除。As shown in Figure 8, please also refer to Figure 4, which is the third embodiment of the present application. The difference from the second embodiment is that the shape of the adsorption member 20 corresponds to the shape of the additional area 11, and The adhesion area of the adsorption member 20 includes the area of the connecting section 111, which increases the efficiency of insertion or removal of the adsorption member 20. In addition, in other embodiments of the present application, the two additional areas 11 connected to each other can also be connected to other additional areas 11, so that the adsorbing member 20 is connected to the surface of the second electrode plate 10 in a long strip, and the user only needs to By pulling up one end of the adsorbing member 20, the adsorbing members 20 connected in a series can be removed together. Therefore, the adsorbing member 20 can be more quickly adhered to the surface of the second electrode plate 10 or removed from the second electrode plate 10. The surface is removed.
如圖9所示，並請同時參閱圖4，係為本申請之第四實施例，其與第三實施例的不同之處在於，外露區12於第二電極板10之表面呈田字形排列，而使附加區11呈矩形，其中，附加區11具有複數移除區112，移除區112係自各該附加區11之四個角落向外延伸形成，以此讓使用者能夠快速的將吸附件20從第二電極板10之表面移除。As shown in FIG. 9 , please also refer to FIG. 4 , which is the fourth embodiment of the present application. The difference from the third embodiment is that the exposed areas 12 are arranged in a field shape on the surface of the second electrode plate 10 , so that the additional area 11 is rectangular, in which the additional area 11 has a plurality of removal areas 112. The removal areas 112 are formed by extending outward from the four corners of each additional area 11, so that the user can quickly remove the adsorption areas. The member 20 is removed from the surface of the second electrode plate 10 .
如圖10所示，並請同時參閱圖4，係為本申請之第五實施例，其與第四實施例的不同之處在於，外露區12除了於第二電極板10之表面呈田字形排列之外，外露區12係自田字形排列更進一步的延伸出對角線外露出，而使附加區11呈三角形。As shown in FIG. 10 , and please refer to FIG. 4 at the same time, it is the fifth embodiment of the present application. The difference from the fourth embodiment is that the exposed area 12 is in the shape of a field except on the surface of the second electrode plate 10 . In addition to the arrangement, the exposed area 12 is further extended from the field-shaped arrangement and exposed diagonally, so that the additional area 11 is triangular.
如圖11所示，並請同時參閱圖4，係為本申請之第六實施例，其與第五實施例的不同之處在於，附加區11與外露區12係對應於第二電極板10之形狀並於第二電極板10之表面呈同心排列。As shown in Figure 11, please also refer to Figure 4, which is the sixth embodiment of the present application. The difference from the fifth embodiment is that the additional area 11 and the exposed area 12 correspond to the second electrode plate 10 shapes and are arranged concentrically on the surface of the second electrode plate 10 .
藉此，本創作具有以下優點：Thus, this creation has the following advantages:
1.本申請係透過吸附件20的高吸附力將待製程基板200吸附定位於第二電極板10上，以此有效的防止待製程基板200在電漿製程中發生翹曲的情況。1. This application uses the high adsorption force of the adsorption member 20 to adsorb and position the substrate 200 to be processed on the second electrode plate 10, thereby effectively preventing the substrate 200 to be processed from warping during the plasma process.
2.本申請的限位單元30為絕緣材質，因此在待製程基板200進行電漿製程時，限位單元30並不會因為電漿製程中的熱因素而發生變形的情況，所以限位單元30能夠在不影響待製程基板200之製程狀況下，進一步的防止待製程基板200產生翹曲的情況。2. The limiting unit 30 of the present application is made of insulating material. Therefore, when the substrate to be processed 200 undergoes a plasma process, the limiting unit 30 will not be deformed due to thermal factors in the plasma process. Therefore, the limiting unit 30 can further prevent the substrate 200 to be processed from warping without affecting the process conditions of the substrate 200 to be processed.
3.本申請具有輸氣口121及抽氣口122的設計，使得本申請能夠透過散熱氣體在外露區12的流動，達到加強散熱效率之功效。並且，第二電極板10所設置的冷卻通道13，亦能夠更進一步的提高散熱效率。3. This application has the design of the air delivery port 121 and the air extraction port 122, so that the application can achieve the effect of enhancing the heat dissipation efficiency through the flow of heat dissipation gas in the exposed area 12. Moreover, the cooling channel 13 provided on the second electrode plate 10 can also further improve the heat dissipation efficiency.
雖然本申請是以一個最佳實施例作說明，精於此技藝者能在不脫離本創作精神與範疇下作各種不同形式的改變。以上所舉實施例僅用以說明本創作而已，非用以限制本創作之範圍。舉凡不違本創作精神所從事的種種修改或改變，俱屬本創作申請專利範圍。Although this application describes a preferred embodiment, those skilled in the art can make various changes without departing from the spirit and scope of this invention. The above embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. All modifications or changes that do not violate the spirit of this creation are within the scope of the patent application for this creation.
1:真空電漿製程腔體 100:載體吸附機構 200:待製程基板 300:第一電極 400:電漿製程空間 10:第二電極板 11:附加區 111:連接段 112:移除區 12:外露區 121:輸氣口 122:抽氣口 13:冷卻通道 20:吸附件 21:吸附層 22:黏貼層 30:限位單元 D:間隔 1: Vacuum plasma process chamber 100: Carrier adsorption mechanism 200:Substrate to be processed 300: first electrode 400: Plasma process space 10: Second electrode plate 11: Additional area 111:Connection segment 112:Remove area 12:Exposed area 121:Gas outlet 122:Exhaust port 13: Cooling channel 20: Adsorption parts 21: Adsorption layer 22:Adhesive layer 30:Limiting unit D:interval
[圖1]係本申請實施例之電漿製程系統的載體吸附機構之實施狀態示意圖，用於表示本申請設於真空電漿製程腔體中。 [圖2]係本申請第一實施例之電漿製程系統的載體吸附機構之立體外觀示意圖。 [圖3]係本申請第二實施例之電漿製程系統的載體吸附機構之立體外觀示意圖。 [圖4]係本申請第二實施例之電漿製程系統的載體吸附機構之立體***示意圖。 [圖5]係本申請第二實施例之電漿製程系統的載體吸附機構之局部放大示意圖。 [圖6]係本申請第二實施例之電漿製程系統的載體吸附機構之剖面放大示意圖。 [圖7]係本申請第二實施例之電漿製程系統的載體吸附機構之剖面放大示意圖，用以表示第二電極板具有冷卻通道。 [圖8]係本申請第三實施例之電漿製程系統的載體吸附機構之立體外觀示意圖以及局部放大圖，其中，局部放大圖用以表示吸附件之黏貼區域包含連接段之區域。 [圖9]係本申請第四實施例之電漿製程系統的載體吸附機構之立體外觀示意圖。 [圖10]係本申請第五實施例之電漿製程系統的載體吸附機構之立體外觀示意圖。 [圖11]係本申請第六實施例之電漿製程系統的載體吸附機構之立體外觀示意圖。 [Fig. 1] is a schematic diagram of the carrier adsorption mechanism of the plasma processing system according to the embodiment of the present application. It is used to show that the present application is installed in the vacuum plasma processing chamber. [Fig. 2] is a schematic three-dimensional appearance diagram of the carrier adsorption mechanism of the plasma processing system according to the first embodiment of the present application. [Fig. 3] is a schematic three-dimensional appearance diagram of the carrier adsorption mechanism of the plasma processing system according to the second embodiment of the present application. [Fig. 4] is a three-dimensional exploded schematic diagram of the carrier adsorption mechanism of the plasma processing system according to the second embodiment of the present application. [Fig. 5] is a partially enlarged schematic diagram of the carrier adsorption mechanism of the plasma processing system according to the second embodiment of the present application. [Fig. 6] is an enlarged schematic cross-sectional view of the carrier adsorption mechanism of the plasma processing system according to the second embodiment of the present application. [Fig. 7] is an enlarged cross-sectional schematic diagram of the carrier adsorption mechanism of the plasma processing system according to the second embodiment of the present application, showing that the second electrode plate has a cooling channel. [Fig. 8] is a schematic three-dimensional view and a partial enlarged view of the carrier adsorption mechanism of the plasma processing system according to the third embodiment of the present application. The partial enlarged view is used to show that the adhesion area of the adsorption member includes the connecting section. [Fig. 9] is a schematic three-dimensional appearance diagram of the carrier adsorption mechanism of the plasma processing system according to the fourth embodiment of the present application. [Fig. 10] is a schematic three-dimensional appearance diagram of the carrier adsorption mechanism of the plasma processing system according to the fifth embodiment of the present application. [Fig. 11] is a schematic three-dimensional view of the carrier adsorption mechanism of the plasma processing system according to the sixth embodiment of the present application.
200:待製程基板 200:Substrate to be processed
10:第二電極板 10: Second electrode plate
11:附加區 11: Additional area
111:連接段 111:Connection segment
12:外露區 12:Exposed area
121:輸氣口 121:Gas outlet
20:吸附件 20: Adsorption parts
21:吸附層 21: Adsorption layer
22:黏貼層 22:Adhesive layer
30:限位單元 30:Limiting unit
D:間隔 D:interval
Claims (18)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111119216A TWI819623B (en) | 2022-05-24 | 2022-05-24 | Carrier attachment mechanism of plasma process system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW111119216A TWI819623B (en) | 2022-05-24 | 2022-05-24 | Carrier attachment mechanism of plasma process system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI819623B true TWI819623B (en) | 2023-10-21 |
| TW202348093A TW202348093A (en) | 2023-12-01 |
Family
ID=89857525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW111119216A TWI819623B (en) | 2022-05-24 | 2022-05-24 | Carrier attachment mechanism of plasma process system |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI819623B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150318258A1 (en) * | 2012-09-28 | 2015-11-05 | Intel Corporation | Die warpage control for thin die assembly |
| KR20160110089A (en) * | 2015-03-09 | 2016-09-21 | 인텔 코포레이션 | On package floating metal/stiffener grounding to mitigate rfi and si risks |
| TWI681497B (en) * | 2015-04-04 | 2020-01-01 | 日商東京威力科創股份有限公司 | Substrate holding method, substrate holding device, processing method and processing device |
| KR20210114342A (en) * | 2020-03-10 | 2021-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | High connectivity device stacking |
| TW202203072A (en) * | 2020-07-07 | 2022-01-16 | 以色列商納米尺寸技術領域股份有限公司 | Surface-complementary dielectric mask for printed circuits, methods of fabrication and uses thereof |
-
2022
- 2022-05-24 TW TW111119216A patent/TWI819623B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150318258A1 (en) * | 2012-09-28 | 2015-11-05 | Intel Corporation | Die warpage control for thin die assembly |
| KR20160110089A (en) * | 2015-03-09 | 2016-09-21 | 인텔 코포레이션 | On package floating metal/stiffener grounding to mitigate rfi and si risks |
| TWI681497B (en) * | 2015-04-04 | 2020-01-01 | 日商東京威力科創股份有限公司 | Substrate holding method, substrate holding device, processing method and processing device |
| KR20210114342A (en) * | 2020-03-10 | 2021-09-23 | 어플라이드 머티어리얼스, 인코포레이티드 | High connectivity device stacking |
| TW202203072A (en) * | 2020-07-07 | 2022-01-16 | 以色列商納米尺寸技術領域股份有限公司 | Surface-complementary dielectric mask for printed circuits, methods of fabrication and uses thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202348093A (en) | 2023-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101559947B1 (en) | Electrostatic chuck, and method for manufacturing the chuck | |
| TWI690980B (en) | Method for transferring chip and chip transferring apparatus | |
| US9653337B2 (en) | Transport arm, transport apparatus and transport method | |
| CN102473668B (en) | Electrostatic attracting structure and fabricating method therefor | |
| WO2018103181A1 (en) | Backlight module, liquid crystal display module, and television | |
| TWI819623B (en) | Carrier attachment mechanism of plasma process system | |
| TW201222076A (en) | Apparatus for fabricating flexible liquid crystal display | |
| KR100718017B1 (en) | Vacuum Chuck | |
| TW201733732A (en) | Holding arrangement for holding a substrate, carrier for supporting a substrate, vacuum processing system, method for holding a substrate, and method for releasing a substrate | |
| JP5100579B2 (en) | Adsorption device for substrate and method for handling substrate | |
| WO2021164427A1 (en) | Processing platform | |
| WO2019024608A1 (en) | Substrate suction apparatus | |
| TWM635585U (en) | Full-suction mechanism for carrier in plasma process system | |
| TW201318095A (en) | Thin substrate supporting apparatus and the fabricating method thereof | |
| TWM647658U (en) | Carrier pasting mechanism of plasma process system | |
| CN217933750U (en) | Carrier full-adsorption type mechanism of plasma processing system | |
| TW202013580A (en) | Wafer leveling chuck structure and method thereof by applying secondary wafer leveling to enhance flatness of processed portion | |
| CN211868630U (en) | Film pasting equipment | |
| JP4308564B2 (en) | Plasma processing apparatus and plasma processing tray | |
| CN117198965A (en) | Carrier adsorption mechanism of plasma processing system | |
| TW201346046A (en) | Glass substrate stacking structure, apparatus and method for film coating process | |
| JP2011258625A (en) | Method for handling semiconductor wafer | |
| TWI409358B (en) | Plasma enhanced chemical vapor deposition device | |
| TW201936949A (en) | A substrate support for supporting a substrate having a front surface to be processed and an opposing back surface, a method for processing a substrate, a vacuum processing apparatus and a substrate processing system | |
| TWI532588B (en) | To prevent the bubble generated by the adhesive tape and electronic components of the method |